CN110299311A - A kind of wafer cleaning drying device and method - Google Patents
A kind of wafer cleaning drying device and method Download PDFInfo
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- CN110299311A CN110299311A CN201910547884.5A CN201910547884A CN110299311A CN 110299311 A CN110299311 A CN 110299311A CN 201910547884 A CN201910547884 A CN 201910547884A CN 110299311 A CN110299311 A CN 110299311A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
This application involves wafer processing techniques fields, more particularly to a kind of wafer cleaning drying device and method.The wafer cleaning drying device, comprising: cavity；At least two groups main jet head tube, is set in the cavity, wherein main jet head tube described in every group includes: at least one cleaning pipe, for spraying cleaning liquid to crystal column surface；At least one assists drying tube, for spraying the dry liquid of auxiliary；At least one drying tube, for spraying dry gas.So that wafer is successively passed through the cleaning sprayer of wafer cleaning drying device, assists dry spray head and dry spray head to be cleaned and dried, the cleaning and drying process can settle at one go, wafer cleaning drying efficiency can be improved, reduce processing time, material saving, energy-saving and emission-reduction.
Description
Technical field
This application involves wafer processing techniques fields, more particularly to a kind of wafer cleaning drying device and method.
Background technique
In integrated circuit fabrication, wafer needs to carry out multiple tracks manufacture craft.After the completion of many techniques, such as wet etching
Deng, it will usually pollutant is left in crystal column surface, influence of these pollutants to product subsequent technique is very big, therefore wafer is wanted
It is cleaned and is dried, wafer can just be made to enter lower one of manufacture craft, wafer cleaning and dry effect directly affect product
Yield.
Fig. 1 is a kind of structural schematic diagram of wafer cleaning drying device and the dry skill of wafer cleaning using described device
Art step schematic diagram.With reference to Fig. 1 (a), the wafer cleaning drying device includes rinse bath 110, is arranged in the cleaning-drying
In the cavity of device；Inlet 111 is set to 110 bottom of rinse bath；Isopropanol spray head 120 is set to described device top
Portion；Hot nitrogen gas nozzle 130 is set at the top of described device；Leakage fluid dram 140 is set to the clearing and drying device bottom；Wafer
Loading attachment 160, for loading and moving wafer 150.
When carrying out cleaning-drying technique, the wafer 150 is loaded on the wafer load device 160 and is placed in
After in the rinse bath 110, start to fill the water into the rinse bath 110 by the inlet 111, then to the wafer
150 carry out overflow cleaning, that is, are cleaned by not arrheaing dynamic water flow to the wafer 150.Then referring to Fig. 1 (b),
The isopropanol spray head 120 starts to spray methanol vapor after the completion of overflow cleaning, and the wafer load device 160 mentions upwards
Crystal pulling circle 150, isopropanol can form azeotropic mixture with the water remained on surface of wafer 150, and the boiling point of the azeotropic mixture is lower than water
Boiling point, therefore the dry effect of auxiliary is played, the last hot nitrogen gas nozzle 130, which sprays hot nitrogen, makes the crystal column surface
Dry wafer 150 is played the role of in azeotropic mixture evaporation.
The cleaning and drying of wafer are carried out using the wafer cleaning drying device, cleaning and dry substep are completed, consumption
When it is longer, larger to the consumption of water and cleaning solution, cleaning efficiency is low, clean it is at high cost；Simultaneously with wet process in semiconductor technology
Etching technics etches the increase of depth-to-width ratio, and the cleaning and drying device is difficult to clean at the deep trench by crystal column surface and drying is thorough
Bottom；In addition, serious washmarking can be formed in bottom when the speed control of wafer load device lifting wafer is bad, it is right
Product yield has an impact.It is therefore desirable to develop a kind of new wafer cleaning drying device and wafer cleaning dry technology,
To improve wafer cleaning drying efficiency, material saving, and improve the dry effect of wafer cleaning.
Summary of the invention
The application provides a kind of wafer cleaning drying device and the wafer cleaning drying means using described device, can be with
Wafer cleaning drying efficiency, material saving are improved, and improves the dry effect of wafer cleaning.
The one aspect of the application provides a kind of wafer cleaning drying device, comprising: cavity；At least two groups main jet head tube,
It is set in the cavity, and can move in the cavity, wherein main jet head tube described in every group includes: that at least one is clear
Pipe is washed, for spraying cleaning liquid to crystal column surface；At least one assists drying tube, for spraying the dry liquid of auxiliary；Extremely
A few drying tube, for spraying dry gas.
In some embodiments of the present application, described device further include: at least one set of side spray head tube is set to the cavity
It is interior, it include: at least one cleaning sprayer in at least one set side spray head tube, for spraying cleaning liquid to wafer side wall；Extremely
Few dry spray head of an auxiliary, for spraying the dry liquid of auxiliary；At least one drying spray head, for spraying dry gas.
In some embodiments of the present application, described device further include: protection spray head, be set in the cavity, into
Before row is cleaned and dried, for spraying protective gas.
In some embodiments of the present application, described device further include: main jet head tube position detecting device is set to described
In cavity, for monitoring the working condition of the main jet head tube.
In some embodiments of the present application, described device further includes lifting arm, for loading and moving the crystalline substance
Circle.
In some embodiments of the present application, described device further includes leakage fluid dram, is located at the cavity bottom, is used for drain
And exhaust.
In some embodiments of the present application, the group number of the main jet head tube is that the quantity of wafer to be cleaned adds one.
In some embodiments of the present application, at least one cleaning pipe, at least one assists drying tube and at least one
At least one cleaning sprayer is respectively included on root drying tube, at least one assists dry spray head and at least one drying spray head.
In some embodiments of the present application, at least one cleaning pipe, at least one assists drying tube and at least one
Root drying tube is arranged successively along the direction of vertical level.
In some embodiments of the present application, the spray head in the main jet head tube and the side spray head tube is set as to described
The mounting surface of cavity tilts.
Further aspect of the application also provides a kind of wafer cleaning drying means, comprising: by wafer load to institute as above
The wafer is moved between two adjacent groups main jet head tube by the wafer cleaning drying device stated, and is lower than the main jet
The position of head tube；In inert atmosphere, the wafer is made to pass sequentially through cleaning sprayer, assists dry spray head, and dry spray head, into
Row cleaning and drying.
The application provides a kind of wafer cleaning drying device and the wafer cleaning drying means using described device, makes crystalline substance
Circle successively passes through the cleaning sprayer of wafer cleaning drying device, and dry spray head and dry spray head is assisted to be cleaned and done
Dry, the cleaning and drying process can settle at one go, and wafer cleaning drying efficiency can be improved, and reduce processing time, save and use
Material, energy-saving and emission-reduction.
Detailed description of the invention
Exemplary embodiment disclosed in this application is described in detail in the following drawings.Wherein identical appended drawing reference is in attached drawing
Several views in indicate similar structure.Those of ordinary skill in the art will be understood that these embodiments be non-limiting,
Exemplary embodiment, the purpose that attached drawing is merely to illustrate and describes, it is no intended to it limits the scope of the present disclosure, other modes
Embodiment may also similarly complete the intention of the invention in the application.It should be appreciated that the drawings are not drawn to scale.Wherein:
Fig. 1 (a) and Fig. 1 (b) is a kind of structural schematic diagram of wafer cleaning drying device and the crystalline substance using described device
Circle is cleaned and dried technical step schematic diagram.
Fig. 2 (a) and Fig. 2 (b) is respectively a kind of structural schematic diagram of wafer cleaning drying device in the embodiment of the present application
Main view and side view.
Fig. 3 to Fig. 7 is the structural schematic diagram in wafer cleaning drying means each stage in the embodiment of the present application.
Fig. 8 is a kind of multiple batches of wafer cleaning and dry schematic diagram in the embodiment of the present application.
Specific embodiment
Following description provides the specific application scene of the application and requirements, it is therefore an objective to those skilled in the art be enable to make
It makes and using the content in the application.To those skilled in the art, to the various partial modifications of the disclosed embodiments
Be it will be apparent that and without departing from the spirit and scope of the disclosure, the General Principle that will can be defined here
Applied to other embodiments and application.Therefore, the embodiment the present disclosure is not limited to shown in, but it is consistent most wide with claim
Range.
Technical solution of the present invention is described in detail below with reference to embodiment and attached drawing.
A kind of wafer cleaning drying device provided by the present application, comprising: cavity 290；At least two groups main jet head tube 220, if
It is placed in the cavity 290, and can be moved in the cavity 290, wherein main jet head tube 220 described in every group includes: at least
A piece cleaning pipe 221, for spraying cleaning liquid to 150 surface of wafer；At least one assists drying tube 222, auxiliary for spraying
Help dry liquid；At least one drying tube 223, for spraying dry gas.
Main view (a) and side view of the Fig. 2 for the structural schematic diagram of wafer cleaning drying device a kind of in the embodiment of the present application
Scheme (b).It should be noted that for purposes of brevity, the position of each component part is only schematically shown in attached drawing
Relationship and general shape do not represent its true shape and structure, for example, spray head is all drawn as arrow in figure, with arrow table
Show position and the injection direction of spray head, similarly, leakage fluid dram is also so to indicate.
With reference to Fig. 2 (b), described device 200 includes at least two groups main jet head tube 220, and the main jet head tube 220 can be
Moved in the cavity, for example, in some embodiments, the main jet head tube 220 moves in the horizontal direction so that it is described to
Cleaning wafer 150 can be between two groups of main jet head tubes 220.
In some embodiments of the present application, the group number of the main jet head tube 220 is that the quantity of wafer 150 to be cleaned adds
One, it is ensured that when carrying out cleaning-drying technique, guarantee the position of each wafer 150 in the cavity lower than described
The position of main jet head tube 220, and be arranged between two groups of adjacent main jet head tubes 220, two groups of adjacent in this way spray heads
Pipe 220 can be cleaned and be dried to the tow sides of the wafer 150 simultaneously.
With reference to Fig. 2 (a), in the present embodiment, main jet head tube 220 described in every group includes a cleaning pipe 221, the cleaning
It include the cleaning sprayer 231 that at least one is used to spray cleaning liquid to 150 surface of wafer on pipe 221；A piece auxiliary drying tube
222, it is described to assist including that at least one is used to spray the auxiliary drying spray head 232 for assisting dry liquid on drying tube 222；One
Root drying tube 223 includes the drying spray head 233 that at least one is used to spray dry gas on the drying tube 223.
In some embodiments of the present application, the cleaning pipe 221 assists the arrangement of drying tube 222 and drying tube 223
Mode is to set gradually along same vertical plane, and when being cleaned, the cleaning pipe 221 assists drying tube 222 and drying tube
223 set gradually on the direction that some is higher than the cleaning wafer so that it is convenient to which the wafer 150 is during cleaning-drying
Successively pass through the cleaning pipe 221, assists drying tube 222 and drying tube 223.
It include five, ten or 15 in some embodiments of the present application, in the cleaning pipe 221 for spraying
Cleaning liquid to 150 surface of wafer cleaning sprayer 231；It include five, ten or 15 on the auxiliary drying tube 222
The dry spray head 232 of auxiliary for spraying the dry liquid of auxiliary；It include five, ten or 15 on the drying tube 223
A drying spray head 233 for being used to spray dry gas.
In some embodiments of the present application, the mode that the spray head is formed in the main jet head tube 220 is directly to exist
Spray orifice is formed in the main jet head tube 220, the spray orifice is treated as into spray head.It, can also be in some embodiments of the present application
Spray head is additionally installed in the main jet head tube 220, and controls the opening or closure of each spray head by control device.
In some embodiments of the present application, the spray head in the main jet head tube 220 is set as the installation to the cavity
Face inclination, that is to say, that the spray head tilts down, and the angle formed with horizontal plane is 10 degree to 50 degree, described inclined
Spray head is conducive to more thorough by what is cleaned and dry at 150 deep trench of wafer when spraying cleaning solution to the wafer 150.
In some embodiments of the present application, in at least two groups main jet head tube 220, two groups of main jet head tubes at both ends
Spray head only is formed on one end close to inside on 220, all forms spray head in two sides in remaining every group of main jet head tube 220, this
Sample can guarantee that the main jet head tube 220 can be cleaned and be dried to 150 tow sides of wafer.
In some embodiments of the present application, the main jet head tube 220 is mounted on bracket 224, can pass through mobile branch
Frame 224 moves the main jet head tube 220.It, can also be directly by the main jet head tube in other embodiments of the application
220 both ends are mounted on 290 inner wall of cavity, form groove on the inner wall so that the main jet head tube 220 is mobile.
The cleaning sprayer 231 described in some embodiments of the present application can spray for clean the wafer 150 go from
Sub- water；It is described to assist dry spray head 232 that spray the IPA vapor for playing auxiliary desiccation, isopropanol can with cleaned
The moisture remained on surface of wafer 150 forms azeotropic mixture afterwards, and the boiling point of the azeotropic mixture is far below the boiling point of water, it is easier to evaporate；
The dry spray head 233 can spray the hot nitrogen for drying the wafer 150, and the heat of hot nitrogen can make wafer 150
The azeotropic mixture on surface evaporates, and plays desiccation, and nitrogen is inert gas, will not occur with wafer 150 it is any react, make
At damage.
In some embodiments of the present application, the temperature of the hot nitrogen is, for example, 30 degrees Celsius to 70 degrees Celsius.
In some embodiments of the present application, the temperature of the IPA vapor is, for example, 30 degrees Celsius to 70 degrees Celsius.
With reference to Fig. 2 (a), in the present embodiment, described device 200 can also include: at least one set of side spray head tube 240, if
It is placed in the cavity 290, includes: at least one cleaning sprayer 231 in at least one set side spray head tube 240, for spraying
Cleaning liquid is to wafer side wall；At least one assists dry spray head 232, for spraying the dry liquid of auxiliary；At least one is dry
Dry spray head 233, for spraying dry gas.
With reference to Fig. 2 (a), in the present embodiment, two groups of side spray head tubes are provided in the two sides of the main jet head tube 220 respectively
240.Cleaning sprayer 231 in the side spray head tube 240, position and the master of the dry spray head 232 of auxiliary and dry spray head 233
The cleaning pipe 221 on shower head pipe 220 assists the arrangement mode of drying tube 222 and drying tube 223 and height all identical, this
Sample main jet head tube 220 and side spray head tube 240 can synchronous tow sides and side wall to the wafer 150 all cleaned and done
It is dry.
At least one cleaning sprayer in some embodiments of the present application, in at least one set side spray head tube 240
231, at least one assists the position of dry spray head 232 and at least one drying spray head 233 and at least one cleaning pipe
221, at least one assists the arrangement mode and the identical such spray head of height of drying tube 222 and at least one drying tube 223
Pipe 220 and side spray head tube 240 can synchronous tow sides and side wall to the wafer 150 all cleaned and dried.
In some embodiments of the present application, the mode that the spray head is formed in the side spray head tube 240 is directly to exist
Spray orifice is formed in the side spray head tube 240, the spray orifice is treated as into spray head.It, can also be in some embodiments of the present application
Spray head is additionally installed in the side spray head tube 240, and controls the opening or closure of each spray head by control device.
In some embodiments of the present application, the spray head in the side spray head tube 240 is set as the installation to the cavity
Face inclination, that is to say, that when the mounting surface is ground, the spray head tilts to the ground, and the angle formed with ground
It is 10 degree to 50 degree, the inclined spray head is conducive to when spraying cleaning solution to the wafer 150 by 150 deep trench of wafer
It cleans and dries and is more thorough in place.
With reference to Fig. 2 (a), in the present embodiment, described device 200 further includes protection spray head 260, is set to the cavity
In 290, before being cleaned and dried, for spraying protective gas.
In the present embodiment, the protection spray head 260 is mounted on 290 top of cavity, and the protective gas of ejection is nitrogen
Gas, the nitrogen are full of described device 200, protect the wafer 150 not oxidized in technical process.
In some embodiments of the present application, the protective gas that the protection spray head 260 sprays is also possible to other gases,
Such as inert gas protects the wafer 150 in work as long as the gas can form protection atmosphere in described device 200
It is not oxidized during skill.
With reference to Fig. 2 (a), in the present embodiment, described device 200 further includes main jet head tube position detecting device 250, if
It is placed in the cavity 290, for monitoring the working condition of the main jet head tube 220.In the present embodiment, in the cavity
There are two the monitoring devices 250 for setting on 290 inner wall, and position is respectively in the two sides of the main jet head tube 220.The detection
Device 250 can detecte the spray head in the main jet head tube 220 working condition and spray head position it is whether accurate.
With reference to Fig. 2 (a), in the present embodiment, described device 200 further includes lifting arm 280, for loading and moving
The wafer 150, the shape and structure of the lifting arm 280 are identical as common lifting arm, do not do retouch in detail herein
It states.
With reference to Fig. 2 (a), in the present embodiment, described device 200 further includes leakage fluid dram 270, is located at 200 bottom of described device
Portion is used for drain and exhaust.
The embodiment of the present application also provides a kind of wafer cleaning drying means, comprising: loads wafer 150 to as described above
The wafer 150 is moved between two adjacent groups main jet head tube 220 by wafer cleaning drying device 200, and lower than described
The position of main jet head tube；In inert atmosphere, the wafer 150 is made to pass sequentially through the cleaning sprayer 231, assists dry spray head
232, and dry spray head 233, it is cleaned and is dried.
The speed that the wafer 150 moves from the bottom to top cannot be too fast, otherwise cleans and the dry time is too short, cleaning
It is not thorough with drying.In some embodiments of the present application, the wafer rate of climb is lower than 5mm/s.
Fig. 3 to Fig. 7 is the structural schematic diagram in wafer cleaning drying means each stage in the embodiment of the present application.Below with reference to attached
The wafer cleaning drying means is described in figure.
It is at this time the preproduction phase before wafer cleaning with reference to Fig. 3, passes through the lifting arm 280 first for the wafer
150 are moved between two adjacent groups main jet head tube 220, and are lower than the position of the main jet head tube, the wafer 150 described in this way
220 region of main jet head tube can be passed through from the bottom to top.Then the cavity 290 is closed, and starts the protection spray head
260, protective gas is sprayed, makes to keep protective gas atmosphere in described device, protects the wafer not oxidized.
In the present embodiment, the protective gas that the protection spray head 260 sprays is nitrogen, and the nitrogen is full of described device
200, protect the wafer 150 not oxidized in technical process.
In some embodiments of the present application, the protective gas that the protection spray head 260 sprays is also possible to other gases,
Such as inert gas protects the wafer 150 in work as long as the gas can form protection atmosphere in described device 200
It is not oxidized during skill.
With reference to Fig. 4, starts to carry out wafer cleaning drying process, spray head is moved to wafer cleaning position, main jet head tube position
Set the starting detecting of detection device 250, it is ensured that nozzle position is correct.Start cleaning sprayer 231 simultaneously, assists dry 232 He of spray head
Dry spray head 233, is then turned on 270 drain of leakage fluid dram and air draft, and the lifting arm 280 controls the wafer 150 upwards
It is mobile, the cleaning sprayer 231 is first passed around, the cleaning sprayer 131 in the main jet head tube 220 sprays deionized water to described
150 tow sides of wafer are cleaned, and the cleaning sprayer 231 in the side spray head tube 240 sprays deionized water to the wafer
150 side walls are cleaned.
In some embodiments of the present application, the cleaning sprayer 231 is set as tilting to the mounting surface of the cavity,
That is the spray head tilts to the ground when the mounting surface is ground, and the angle formed with ground is 10 degree to 50
Degree.Inclined spray head is conducive to more thorough by what is cleaned at 150 deep trench of wafer.
The flow of the cleaning sprayer 231 cannot be too low, and otherwise the speed of spray head microjet is too low, cannot be to the wafer
150 surface cleans are thorough, and on the other hand the flow of the cleaning sprayer 231 can not be too high, otherwise the spray head microjet of high speed
150 surface of wafer may be caused to damage, generate washmarking.In some embodiments of the present application, the cleaning sprayer 231
Flow be 2L/min.
With reference to Fig. 5, the wafer 150 after over cleaning is by the dry spray head 232 of the auxiliary, 220 He of main jet head tube
The dry spray head 232 of auxiliary in side spray head tube 240 sprays IPA vapor, isopropanol with it is residual on 150 surface of wafer and side wall
The moisture stayed, which combines, forms azeotropic mixture, and the boiling point of the azeotropic mixture is far below the boiling point of water, it is easier to evaporate, it is dry to play auxiliary
Dry effect.In some embodiments of the present application, the temperature of the IPA vapor is, for example, 30 degrees Celsius to 70 Celsius
Degree.
In some embodiments of the present application, the dry spray head 232 of the auxiliary is set as inclining to the mounting surface of the cavity
Tiltedly, that is to say, that when the mounting surface is ground, the spray head tilts to the ground, and the angle formed with ground is 10
Degree is to 50 degree.Inclined spray head is conducive to isopropanol and is preferably combined with the remaining moisture of crystal column surface.
The flow for assisting dry spray head 232 cannot be too low, and otherwise the speed of spray head microjet is too low, influences isopropanol
And the combination of crystal column surface residual moisture, on the other hand the flow for assisting dry spray head 232 can not be too high, otherwise high speed
Spray head microjet 150 surface of wafer may be caused to damage, generate washmarking.In some embodiments of the present application, institute
Stating and assisting the flow of dry spray head 232 is 2L/min.
With reference to Fig. 6, the wafer 150 continues to move past the dry spray head 233, the main jet head tube 220 and side spray
Drying spray head 233 in head tube 240 sprays hot nitrogen, and the heat of the hot nitrogen can make the azeotropic mixture on 150 surface of wafer
Evaporation, play desiccation, and nitrogen is inert gas, will not occur with wafer 150 it is any react, cause to damage.At this
In some embodiments of application, the temperature of the hot nitrogen is 30 degrees Celsius to 70 degrees Celsius.
In some embodiments of the present application, the dry spray head 233 is set as tilting to the mounting surface of the cavity,
That is the spray head tilts down, and the angle formed with horizontal plane is 10 degree to 50 degree, inclined spray head from upper and
It is lower to spray hot nitrogen to the wafer 150, be conducive to more thorough by what is dried at 150 deep trench of wafer.
The flow of the dry spray head 233 cannot be too low, and otherwise the speed of spray head microjet is too low, can not be by wafer 150
Drying is more thorough at deep trench, and on the other hand the flow of the dry spray head 233 can not be too high, and otherwise the spray head of high speed is micro-
Jet stream may cause to damage to 150 surface of wafer, generate washmarking.In some embodiments of the present application, the dry spray
First 233 flow is 2L/min.
In some embodiments of the present application, the temperature of the hot nitrogen is, for example, 30 degrees Celsius to 70 degrees Celsius.
It turns finally to Fig. 7 the wafer 150 after over cleaning and drying is moved to outside described device 200, it is clear to complete wafer
It washes and drying process.
Wafer cleaning drying means described above is single batch cleaning and drying.In some embodiments of the present application, institute
Multiple batches of cleaning and drying can also be carried out by stating wafer cleaning drying device 200.
Fig. 8 is a kind of multiple batches of wafer cleaning and dry schematic diagram in the embodiment of the present application.With reference to Fig. 8 (a), by described
First wafer 151 is moved between two adjacent groups main jet head tube 220 by lifting arm 280, and is lower than the spray head
Second batch wafer 152 is moved to immediately below the main jet head tube 220 by the position of pipe, then first by first wafer 151 to
Upper movement carries out cleaning and drying process.
With reference to Fig. 8 (b), first described wafer 151 is moved to waiting outside described device after completing cleaning and drying process,
Then moving main jet head tube 220 makes the second batch wafer 152 between adjacent main jet head tube 220 by the spray head
Pipe position detecting device 250 ensures that the position of the main jet head tube 220 is correct, then moves up the second batch wafer 152, into
Row cleaning and drying process, close with first described wafer 151 criticize after the completion.
Wafer cleaning drying device 200 provided in this embodiment and the wafer cleaning drying side for using described device 200
Method, mobile wafer 150 successively pass through the cleaning sprayer 231, assist dry spray head 232 and dry spray head 233 carry out cleaning and
Dry, the cleaning and drying process settle at one go, and wafer cleaning drying efficiency can be improved, and reduce processing time, save and use
Expect, energy-saving and emission-reduction, while microjet spray head is conducive to cleaning at deep trench and dry more thorough, raising wafer cleaning drying
Effect, prevent the generation of washmarking.
In conclusion after reading this detailed disclosures, it will be understood by those skilled in the art that aforementioned detailed disclosure
Content can be only presented in an illustrative manner, and can not be restrictive.Although not explicitly described or shown herein, this field skill
Art personnel are understood that improve and modify it is intended to include the various reasonable changes to embodiment.These change, improve and
It modifies and is intended to be proposed by the disclosure, and in the spirit and scope of the exemplary embodiment of the disclosure.
It should be appreciated that term that the present embodiment uses " and/or " it include associated listing one or more of project
It is any or all combination.It, can be with it should be appreciated that when an element is referred to as " connection " or " coupling " to another element
It is directly connected or is coupled to another element, or there may also be intermediary elements.
It is also understood that term " including ", " including ", " including " and/or " including ", is deposited herein in use, indicating
In documented feature, entirety, step, operation, element and/or component, but be not precluded presence or it is additional one or more its
His feature, entirety, step, operation, element, component and/or their group.
It is also understood that although term first, second, third, etc. can be used herein to describe various elements, these
Element should not be limited by these terms.These terms are only used to distinguish an element with another element.Therefore, exist
In the case where not being detached from the teachings of the present invention, first element in some embodiments can be referred to as in other embodiments
Second element.Identical reference label or identical reference designator indicate identical element throughout the specification.
In addition, by reference to as Utopian graphical representation of exemplary cross sectional view and/or plane diagram example is described
Property embodiment.Therefore, because with the shape illustrated not being both foreseeable caused by such as manufacturing technology and/or tolerance.Cause
Exemplary embodiment, should not be interpreted as being limited to the shape in region out shown here, but should include by for example making by this
The deviation in shape caused by making.For example, the etching area for being shown as rectangle would generally have circular or curved spy
Sign.Therefore, region shown in figure is substantially schematical, and shape is not configured to show the practical shape in the region of device
Shape is also not to limit the range of exemplary embodiment.
Claims (11)
1. a kind of wafer cleaning drying device characterized by comprising
Cavity；
At least two groups main jet head tube, is set in the cavity, and can move in the cavity, wherein main described in every group
Shower head pipe includes:
At least one cleaning pipe, for spraying cleaning liquid to crystal column surface；
At least one assists drying tube, for spraying the dry liquid of auxiliary；
At least one drying tube, for spraying dry gas.
2. wafer cleaning drying device as described in claim 1, which is characterized in that further include: at least one set of side spray head tube, setting
In in the cavity, include: in at least one set side spray head tube
At least one cleaning sprayer, for spraying cleaning liquid to wafer side wall；
At least one assists dry spray head, for spraying the dry liquid of auxiliary；
At least one drying spray head, for spraying dry gas.
3. wafer cleaning drying device as described in claim 1, which is characterized in that further include: protection spray head is set to the chamber
In vivo, before being cleaned and dried, for spraying protective gas.
4. wafer cleaning drying device as described in claim 1, which is characterized in that further include: main jet head tube position detecting device,
It is set in the cavity, for monitoring the working condition of the main jet head tube.
5. wafer cleaning drying device as described in claim 1, which is characterized in that further include lifting arm, for load and
The mobile wafer.
6. wafer cleaning drying device as described in claim 1, which is characterized in that further include leakage fluid dram, be located at the cavity bottom
Portion is used for drain and exhaust.
7. wafer cleaning drying device as described in claim 1, which is characterized in that the group number of the main jet head tube is crystalline substance to be cleaned
Round quantity adds one.
8. wafer cleaning drying device as described in claim 1, which is characterized in that at least one cleaning pipe, at least one
At least one cleaning sprayer is respectively included on auxiliary drying tube and at least one drying tube, at least one assists dry spray head and extremely
A few dry spray head.
9. wafer cleaning drying device as described in claim 1, which is characterized in that at least one cleaning pipe, at least one
Auxiliary drying tube and at least one drying tube are arranged successively along the direction of vertical level.
10. wafer cleaning drying device as claimed in claim 2, which is characterized in that the main jet head tube and the side spray head tube
On spray head be set as to the mounting surface of the cavity tilt.
11. a kind of wafer cleaning drying means characterized by comprising
By wafer load to wafer cleaning drying device such as of any of claims 1-11, the wafer is moved to
Between two adjacent groups main jet head tube, and it is lower than the position of the main jet head tube；
In inert atmosphere, the wafer is made to pass sequentially through cleaning sprayer, assists dry spray head, and dry spray head, cleaned
And drying.
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| CN201910547884.5A CN110299311A (en) | 2019-06-21 | 2019-06-21 | A kind of wafer cleaning drying device and method |
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| CN201910547884.5A CN110299311A (en) | 2019-06-21 | 2019-06-21 | A kind of wafer cleaning drying device and method |
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| CN112122200A (en) * | 2020-08-17 | 2020-12-25 | 中国电子科技集团公司第五十五研究所 | Externally-hung cavity for cleaning arm stained with organic solution and cleaning method |
| CN112201592A (en) * | 2020-09-11 | 2021-01-08 | 北京烁科精微电子装备有限公司 | Wafer cleaning device |
| CN112509943A (en) * | 2020-11-10 | 2021-03-16 | 芯米(厦门)半导体设备有限公司 | Wafer surface drying and blowing equipment |
| CN116845014A (en) * | 2023-09-01 | 2023-10-03 | 苏州智程半导体科技股份有限公司 | Groove type wafer cleaning and drying equipment |
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