JP3892786B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention provides a substrate treatment for drying a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”) that has been cleaned with pure water. Regarding technology.
[0002]
[Prior art]
Conventionally, in a substrate manufacturing process, treatment with a chemical solution such as hydrofluoric acid and cleaning with pure water are sequentially performed, and then isopropyl alcohol (hereinafter referred to as “IPA”) or the like is drawn out from the pure water. 2. Description of the Related Art Substrate processing apparatuses that perform drying by supplying an organic solvent vapor to the periphery of a substrate are used. In particular, in recent years when the structure of a pattern formed on a substrate is becoming more complicated and finer, a lift-drying method in which the substrate is lifted from pure water while supplying IPA vapor is becoming mainstream.
[0003]
As shown in FIG. 9, the conventional pull-drying type substrate processing apparatus stores a processing tank 92 for performing a cleaning process with pure water in a container 90. After completion of the cleaning process of the substrate W in the processing tank 92, the substrate W is lifted from the processing tank 92 by the lifting mechanism 93 while supplying nitrogen gas into the container 90, and then, as shown by an arrow FI9 in FIG. The IPA vapor is discharged from 91. Thereby, the inside of the container 90 is filled with IPA vapor, the IPA is condensed on the substrate W, and the substrate is vaporized, whereby the substrate W is dried (see, for example, Patent Document 1). .
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 62-198126
[Problems to be solved by the invention]
However, in the above-described lift-drying type substrate processing apparatus, it is necessary to supply IPA vapor to the entire inside of the container 90, and it cannot be said that IPA vapor is efficiently supplied to the substrate W. There is a problem of high consumption.
[0006]
Further, there is a problem that it takes a long time to vaporize the IPA droplets condensed on the substrate W, and the drying failure occurs due to the IPA droplets remaining on the surface of the substrate W. In particular, this problem is more conspicuous with larger-diameter substrates.
[0007]
The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus that can reduce consumption of an organic solvent and can efficiently vaporize droplets of the organic solvent on the surface of the substrate.
[0008]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 is a substrate processing apparatus for performing a cleaning process and a drying process of a substrate, storing pure water, and immersing the substrate in pure water to perform the cleaning process. A treatment tank to be performed; a container for accommodating the treatment tank; a drainage means for draining pure water stored in the treatment tank in a state where the substrate is held in the treatment tank; An air current region forming means for discharging an organic solvent vapor to a part to form an organic solvent air flow region and discharging an inert gas to a part of the container to form an inert gas air flow region; The substrate is moved with the elevating means for elevating and lowering the substrate in the container, and the substrate is moved by the elevating means after the substrate is cleaned with the pure water in the treatment tank, and the air current area of the organic solvent and the air current area of the inert gas are obtained. comprising sequentially a control means for passing the bets, the air basin formed hand Has a gas discharge portion which opens into the container, the gas discharged from the gas discharge portion, and a discharge switching means for switching between the steam and the inert gas of the organic solvent.
[0009]
The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the airflow region forming unit is configured to remove the organic solvent after the drainage of pure water from the processing tank by the draining unit is completed. Steam discharge is started to form an organic solvent airflow region.
[0010]
The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, further comprising an inert gas inflow means for allowing an inert gas to flow into the processing tank, wherein the inert gas is supplied. The drainage means drains pure water from the treatment tank while an inert gas is caused to flow into the treatment tank by the gas inflow means.
[0011]
The invention according to claim 4 is a substrate processing apparatus according to any one of claims 1 to 3, before Symbol control means, said raising the substrate by the lifting means, within said container After passing through the organic solvent airflow region formed in the predetermined region, the discharge switching means is switched to the inert gas side to form an inert gas airflow region in the region, and the substrate is moved by the lifting means. Lower and pass through the inert gas stream.
[0012]
The invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 4, further comprising decompression means for decompressing the inside of the container, wherein the substrate is free of inert gas. After passing through the basin, the decompression unit decompresses the container while continuing to discharge the inert gas from the airflow region forming unit.
[0013]
The invention according to claim 6 is the substrate processing apparatus according to claim 5, wherein the decompression means decompresses the inside of the container in a state where the substrate is positioned below the air flow region of the inert gas. To do.
[0014]
The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, wherein the inert gas supplied to the airflow region forming means and the inert gas inflow means is heated. And an inert gas heating means for generating a high temperature inert gas.
[0015]
The invention according to claim 8 is the substrate processing apparatus according to any one of claims 1 to 7, wherein the vapor of the organic solvent is a vapor of isopropyl alcohol.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described.
[0017]
<Main part configuration of substrate processing apparatus>
FIG. 1 is a front view of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view as seen from the position II-II in FIG. In addition, in order to clarify those directional relationships, FIG. 1 and the following drawings are appropriately attached with an XYZ orthogonal coordinate system in which the XY plane is a horizontal plane and the Z-axis direction is a vertical direction.
[0018]
The substrate processing apparatus 1 is an apparatus for drying a substrate W that has been cleaned with pure water using IPA, which is an organic solvent, and mainly includes a container 10, a processing tank 20, an elevating mechanism 30, a first A supply nozzle 40 and a second supply nozzle 50 are provided.
[0019]
The treatment tank 20 is a tank that stores chemicals such as hydrofluoric acid or pure water (hereinafter collectively referred to as “treatment liquid”) and sequentially performs surface treatment on the substrate W. Is housed in. A processing liquid discharge nozzle (not shown) is disposed in the vicinity of the bottom of the processing tank 20, and the processing liquid can be supplied into the processing tank 20 from the processing liquid supply source (not shown) via the processing liquid discharge nozzle. it can. This processing liquid is supplied from the bottom of the processing tank 20 and overflows from the overflow surface, that is, the opening 20 </ b> P of the processing tank 20. Moreover, in the processing tank 20, it is also possible to discharge the processing liquid stored in the processing tank 20 by opening a drain valve 47 (see FIG. 3) described later.
[0020]
The container 10 is a housing that accommodates the processing tank 20, the elevating mechanism 30, the first supply nozzle 40, the second supply nozzle 50, and the like therein. The upper part 11 of the container 10 can be opened and closed by a slide-type opening / closing mechanism 12 conceptually illustrated (this opening / closing mechanism 12 is not shown in FIGS. 2 to 8 below). In a state where the upper part 11 of the container 10 is opened, the substrate W can be carried in and out from the opened part. On the other hand, in a state where the upper portion 11 of the container 10 is closed, the inside thereof can be a sealed space.
[0021]
The elevating mechanism 30 is a mechanism for immersing a set of a plurality of substrates W (lots) in the processing liquid stored in the processing tank 20. The lifting mechanism 30 includes a lifter 31, a lifter arm 32, and three holding bars 33, 34, and 35 that hold the substrate W. Each of the three holding rods 33, 34, and 35 is provided with a plurality of holding grooves arranged in the X direction at predetermined intervals so that the outer edge portion of the substrate W fits in and holds the substrate W in a standing posture. Yes. Each holding groove is a notch-shaped groove. The three holding rods 33, 34, and 35 are fixed to the lifter arm 32, and the lifter arm 32 is provided by the lifter 31 so as to be movable up and down in the vertical direction (Z direction).
[0022]
With such a configuration, the elevating mechanism 30 converts the plurality of substrates W held in parallel in the X direction by the three holding rods 33, 34, and 35 into the processing liquid stored in the processing tank 20. It can be moved up and down along the path PT between the immersion position (solid line position in FIG. 1) and the position withdrawn from the processing liquid (virtual line position in FIG. 1). The lifter 31 can employ various known mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley or a belt as a mechanism for moving the lifter arm 32 up and down.
[0023]
1, the substrate W can be transferred between the substrate transport robot outside the apparatus and the lifting mechanism 30 by positioning the lifting mechanism 30 at the phantom line position in FIG. .
[0024]
In addition, two first supply nozzles 40 are provided outside the processing tank 20 in the vicinity of the opening 20P. The two first supply nozzles 40 are provided on both sides of the plurality of substrates W that are lifted and lowered by the lifting mechanism 30. Each of the first supply nozzles 40 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 41 arranged at equal intervals in the X direction. Each of the plurality of ejection holes 41 is formed so that the ejection direction is parallel to the overflow surface. Each of the first supply nozzles 40 discharges IPA vapor or nitrogen gas, which is an inert gas, from the plurality of discharge holes 41 in the horizontal direction (Y direction), above the processing tank 20 and on the substrate W. It functions as an airflow region forming means for forming an airflow region of IPA vapor or nitrogen gas in a region intersecting with the lifting path PT.
[0025]
Further, two second supply nozzles 50 are provided inside the container 10 and above the outer side of the upper end of the processing tank 20. The two second supply nozzles 50 are respectively provided below the first supply nozzle 40. Each of the second supply nozzles 50 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 51 arranged at equal intervals in the X direction. Each of the plurality of discharge holes 51 is formed obliquely downward so that the discharge direction is directed to the opening 20P of the processing tank 20. Each of the second supply nozzles 50 discharges nitrogen gas that is an inert gas from the plurality of discharge holes 51 toward the opening 20P of the processing tank 20, and flows the nitrogen gas into the processing tank 20. Functions as an inert gas inflow means.
[0026]
The first supply nozzle 40 and the second supply nozzle 50 can be supplied with IPA vapor, nitrogen gas, or the like from a supply mechanism outside the container 10. FIG. 3 is a schematic diagram illustrating a configuration of piping and the like of the substrate processing apparatus 1.
[0027]
The first supply nozzle 40 is connected to the IPA supply source 42 and the nitrogen gas supply source 44 through piping. By opening the IPA valve 43, IPA vapor can be supplied from the IPA supply source 42 to the first supply nozzle 40. The IPA vapor supplied to the first supply nozzle 40 is discharged from each of the plurality of discharge holes 41 while forming a flow parallel to the main surface of the substrate W in the horizontal direction.
[0028]
Further, by opening the nitrogen gas valve 46, nitrogen gas can be supplied from the nitrogen gas supply source 44 to the first supply nozzle 40. The nitrogen gas supplied to the first supply nozzle 40 is discharged from each of the plurality of discharge holes 41 while forming a flow parallel to the main surface of the substrate W in the horizontal direction.
[0029]
That is, if the nitrogen gas valve 46 is closed and the IPA valve 43 is opened, IPA vapor can be supplied from the first supply nozzle 40 in parallel with the overflow surface of the processing tank 20, and conversely, the IPA valve 43 is closed and the nitrogen gas is supplied. If the gas valve 46 is opened, nitrogen gas can be supplied in parallel with the overflow surface of the processing tank 20.
[0030]
The second supply nozzle 50 is connected to the nitrogen gas supply source 44 through a pipe. By opening the nitrogen gas valve 45, nitrogen gas can be supplied from the nitrogen gas supply source 44 to the second supply nozzle 50. The nitrogen gas supplied to the second supply nozzle 50 is discharged while forming a flow parallel to the main surface of the substrate W from each of the plurality of discharge holes 51 toward the opening 20P of the processing tank 20.
[0031]
Further, the bottom of the processing tank 20 and a drain line outside the apparatus are connected via a pipe, and a drain valve 47 is inserted in the pipe. When the drain valve 47 is opened, the processing liquid in the processing tank 20 is quickly discharged from the bottom of the processing tank 20.
[0032]
The inside of the container 10 and an exhaust line outside the apparatus are connected via a pipe, and an exhaust valve 48 and an exhaust (decompression) pump 49 are inserted in the pipe. By opening the exhaust valve 48 and driving the exhaust pump 49, the atmosphere in the container 10 is exhausted.
[0033]
Note that the IPA valve 43, the nitrogen gas valves 45 and 46, the drain valve 47, the exhaust valve 48, and the exhaust pump 49 shown in FIG. The control unit 60 and the drainage valve 47 function as drainage means. In addition, the control unit 60, the IPA valve 43, and the nitrogen gas valve 46 function as discharge switching means for the first supply nozzle.
[0034]
<Drying process in substrate processing apparatus 1>
FIG. 4 is a flowchart for explaining the substrate processing operation in the substrate processing apparatus 1. FIGS. 5 to 8 are diagrams for explaining the processing in the substrate processing apparatus 1. Hereinafter, the processing procedure of the substrate processing apparatus 1 will be described with reference to FIGS.
[0035]
When processing the substrate W in the substrate processing apparatus 1 described above, first, the elevating mechanism 30 receives a plurality of substrates W from a substrate transport robot (not shown). And the raising / lowering mechanism 30 lowers the plurality of substrates W collectively held at intervals in the X direction, and the container 10 is hermetically sealed, and processing is performed from the opening 20P for carrying the substrates W into the processing tank 20. It is immersed in the pure water stored in the tank 20 (step S1). At this stage, pure water continues to be supplied to the treatment tank 20, and pure water continues to overflow from the overflow surface at the upper end of the treatment tank 20. The pure water overflowing from the treatment tank 20 is collected by a collection unit provided outside the upper end of the treatment tank 20 and discharged to a drain line outside the apparatus.
[0036]
In step S2, the substrate W is cleaned. Here, etching and cleaning processes are performed in a predetermined order by sequentially supplying a chemical solution or pure water to the processing tank 20 while maintaining a state in which a plurality of substrates W are immersed in pure water stored in the processing tank 20. In accordance with (the state of FIG. 5). Also at this stage, the chemical liquid or pure water continues to overflow from the upper end of the processing tank 20, and the overflowing processing liquid is recovered by the recovery unit.
[0037]
In the state shown in FIG. 5, nitrogen gas is discharged from the first supply nozzle 40 in the horizontal direction as indicated by an arrow FN41 in FIG. 5, and nitrogen is supplied from the second supply nozzle 50 as indicated by an arrow FN42 in FIG. The gas is discharged toward the opening 20P of the processing tank 20. Thereby, the inside of the container 10 becomes a nitrogen atmosphere, and the processing of the substrate W proceeds in the nitrogen atmosphere.
[0038]
As the surface treatment for the substrate W progresses, the final finish cleaning process is eventually reached. In the present embodiment, the finish cleaning process is performed by storing pure water in the processing tank 20 and immersing a plurality of substrates W in the pure water, as in the normal cleaning process. Note that nitrogen gas is also supplied in the final finish cleaning process stage, and nitrogen gas is discharged from the first supply nozzle 40 and the second supply nozzle 50 to perform the finish cleaning process in a nitrogen atmosphere. .
[0039]
In step S3, the pure water stored in the treatment tank 20 is drained. That is, when the cleaning process (step S2) of the substrate W in the processing tank 20 is completed, the pure water stored in the processing tank 20 is retained while the substrate W is held in the processing tank 20, as shown in FIG. Drain. Here, nitrogen gas is discharged from the first supply nozzle 40 in the horizontal direction as indicated by an arrow FN51 in FIG. 6, and nitrogen gas is discharged from the second supply nozzle 50 in the processing tank 20 as indicated by an arrow FN52 in FIG. Nitrogen gas is caused to flow into the processing tank 20 by discharging toward the opening 20P. Thereby, the substrate W exposed from the pure water is covered with a nitrogen atmosphere, and the generation of a watermark on the surface of the substrate W can be prevented.
[0040]
Also, when the substrate W is exposed to the atmosphere in the container 10 by draining while holding the substrate W in the processing tank 20 as described above and lowering the interface (water surface) in the processing tank 20. In contrast to the case where the substrate W is exposed by lifting the substrate W from pure water, the substrate W is not shaken (vibrated) due to the lifting, so that particles that may occur near the interface Reattachment can be effectively prevented. In particular, when it is desired to increase the exposure speed of the substrate W to the atmosphere, a method of holding and draining the substrate W is effective.
[0041]
In step S4, the air current area AI of the IPA vapor is formed. That is, after the drainage in the processing tank 20 (step S3) is completed, the IPA vapor is discharged from the first supply nozzle 40 in the substantially horizontal direction above the processing tank 20 (arrow FI in FIG. 7), and the container 10 An IPA vapor air flow area AI (virtual line portion in FIG. 7) is formed in a partial area of the internal space. This IPA vapor air flow area AI is an IPA vapor zone having a flow velocity of a certain level or more in the discharge direction of the discharge hole 41 in the vicinity of the first supply nozzle 40. Note that the nitrogen gas flow FN62 is continuously supplied from the second supply nozzle 50 into the processing tank 20.
[0042]
In step S5, the substrate W passes through the IPA vapor air flow area AI. That is, the elevating mechanism 30 is driven in the ascending direction (the direction of the arrow DW1 in FIG. 7), and the plurality of substrates W spaced apart from each other are collectively lifted from the processing bath 20. Here, as shown in FIG. 7, the plurality of substrates W pass from the bottom to the top through the IPA vapor air flow area AI formed locally in the container 10 by the first supply nozzle 40. In this way, the IPA vapor is blown directly onto the substrate W in the air flow area AI of the IPA vapor formed for a part of the path PT (see FIG. 1). In this case, only a single gas, that is, IPA, rather than a mixed gas acts on the substrate W that has been exposed to the nitrogen gas, and the entire surface of the substrate W is covered with IPA.
[0043]
Since the substrate W passes through the airflow area AI in this way, the IPA vapor can be efficiently supplied to the substrate W, so that the consumption of the IPA vapor can be reduced. That is, since the IPA vapor is mainly supplied to a part of the space inside the container 10, the consumption of IPA can be remarkably reduced as compared with the conventional method of supplying the IPA vapor to the entire inside of the container 10. .
[0044]
In step S6, a nitrogen gas flow area AN is formed. That is, when the substrate W finishes passing through the air flow area AI of the IPA vapor, the supply of the IPA vapor from the first supply nozzle 40 is continued for a certain period of time, and then nitrogen gas is supplied from the first supply nozzle 40 instead of the IPA vapor. It discharges in the horizontal direction (arrow FN71 in FIG. 8), and forms a nitrogen gas flow area AN (virtual line portion in FIG. 8). This airflow area AN of nitrogen gas is substantially the same as the area where the IPA vapor airflow area AI existed (that is, the range where they substantially overlap). As described above, a nitrogen gas airflow area AN having a flow velocity of a certain level or more in the discharge direction of the discharge hole 41 is formed below the substrate W and above the processing tank 20. At this time, the nitrogen gas flow FN 72 is also continuously supplied into the processing tank 20 from the second supply nozzle 50.
[0045]
In step S7, the substrate W passes through the nitrogen gas flow area AN. That is, the elevating mechanism 30 is driven in the descending direction (the direction of the arrow DW2 in FIG. 8), and the plurality of substrates W spaced apart from each other are collectively pulled down into the processing bath 20 again. Here, as shown in FIG. 8, the plurality of substrates W pass from the top to the bottom through the air flow area AN formed locally in the container 10 by the first supply nozzle 40. In this way, in the nitrogen gas flow area AN formed for part of the path PT (see FIG. 1), the nitrogen gas is directly blown onto the substrate W, and the droplets of IPA condensed on the surfaces of the plurality of substrates W. Will be vaporized.
[0046]
As the substrate W passes through the airflow area AN in this way, the IPA droplets condensed on the surface of the substrate W are efficiently vaporized, so that the drying time is shortened and the drying failure due to the residual IPA on the surface of the substrate W is reduced. can do.
[0047]
In step S8, a decompression process is performed. That is, after the substrate W is pulled down below the nitrogen gas flow area AN, the exhaust gas pump 49 is driven while supplying the nitrogen gas from the first supply nozzle 40 and the second supply nozzle 50 to accommodate the IPA vapor. 10 Exhaust outside. At this time, if the total supply flow rate of nitrogen gas from the first supply nozzle 40 and the second supply nozzle 50 is smaller than the exhaust flow rate by the exhaust pump 49, the inside of the container 10 is replaced with a nitrogen gas atmosphere. The pressure can be reduced while the IPA adhering to the surface of the substrate W decreases in boiling point, and the IPA vaporizes rapidly. Therefore, so-called IPA vacuum drying is performed, and vaporization of the IPA droplets remaining on the surface of the substrate W is further promoted.
[0048]
Here, by reducing the pressure in the container 10 while the substrate W is positioned below the nitrogen gas flow area AN, the droplets of the organic solvent remaining in the container 10 and condensed due to the reduced pressure drop. It is blocked by the inert gas flow area AN and does not reach the vicinity of the substrate W. Accordingly, the organic solvent droplets condensed by the decompression at this stage are prevented from newly adhering to the surface of the substrate W.
[0049]
When the drying under reduced pressure is completed, the operation of the exhaust pump 49 is stopped while continuing the supply of nitrogen gas. Thereby, the inside of the container 10 is filled with a nitrogen gas atmosphere, and the pressure is restored to atmospheric pressure. After returning to atmospheric pressure, the supply of nitrogen gas from the first supply nozzle and the second supply nozzle 50 is stopped.
[0050]
In step S9, the substrate W is lifted. That is, when the substrate W is lifted by the lifting mechanism 30 and the substrate W reaches the position of the imaginary line in FIG. 1, the lifting mechanism 30 stops and the lifting of the substrate W is completed. Then, the substrate W is transferred to the substrate transport robot, and a series of processes is completed.
[0051]
By the operation of the substrate processing apparatus 1 described above, since the substrate W passes through the IPA vapor air flow area AI and supplies the IPA vapor directly to the substrate W, the supply amount of IPA can be reduced and the drying efficiency is improved. To do. In addition, since the substrate W passes through the nitrogen gas flow area AN and then the nitrogen gas is supplied directly to the substrate W, the IPA droplets condensed on the surface of the substrate W can be efficiently vaporized. it can.
[0052]
<Modification>
In the above-described embodiment, a heater is provided in the middle of a pipe route led from the nitrogen gas supply source 44, and the high-temperature nitrogen gas heated by operating the heater is supplied to the first supply nozzle 40 or the second supply nozzle. You may make it supply from 50.
[0053]
【The invention's effect】
As described above, according to the first to eighth aspects of the present invention, since the substrate after the cleaning process is passed in the order of the organic solvent airflow region and the inert gas airflow region, the consumption of the organic solvent is increased. The amount of the organic solvent droplets can be reduced, and the organic solvent droplets condensed on the substrate surface by substituting with moisture can be efficiently vaporized. Furthermore, it is possible to reduce drying defects due to organic solvent droplets remaining on the substrate surface. In addition, since the airflow region forming means can switch the discharge of the organic solvent vapor and the inert gas from the same gas discharge portion, the number of discharge portions can be reduced. Can be simplified.
[0054]
According to invention of Claim 2, it suppresses that an organic solvent melt | dissolves in the pure water in a processing tank by starting discharge of the vapor | steam of an organic solvent after the drainage of the pure water in a processing tank is complete | finished. Therefore, the concentration of the organic solvent in the drainage can be reduced, and the drainage treatment cost can be reduced.
[0055]
According to the third aspect of the present invention, the substrate exposed from the pure water is covered with the nitrogen atmosphere in order to drain the pure water in the treatment tank while flowing the inert gas into the treatment tank. The generation of watermarks can be suppressed.
[0057]
According to the invention described in claim 5, after the substrate passes in the order of the organic solvent vapor flow area and the inert gas flow area, the inside of the container is decompressed while continuing the discharge of the inert gas. Thus, the pressure of the organic solvent remaining in the container can be reduced while substituting with an inert gas, the boiling point of the organic solvent adhering to the substrate is lowered, and the vaporization of the organic solvent can be further promoted. .
[0058]
According to the invention described in claim 6, the organic solvent liquid remaining in the container and condensed by the reduced pressure is obtained by reducing the pressure in the container while the substrate is positioned below the inert gas flow area. Even if the droplet falls, it is blocked by the inert gas flow area and does not reach the vicinity of the substrate. Therefore, it is possible to suppress the organic solvent droplets condensed by the reduced pressure from adhering to the substrate surface.
[0059]
According to the seventh aspect of the invention, since the high-temperature inert gas is generated and supplied, the organic solvent droplets condensed on the substrate surface can be vaporized more efficiently.
[0060]
According to the eighth aspect of the invention, since the organic solvent vapor is isopropyl alcohol vapor, the substrate can be efficiently dried.
[Brief description of the drawings]
FIG. 1 is a front view of a substrate processing apparatus 1 according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken from the position II-II in FIG.
FIG. 3 is a schematic diagram showing a configuration of piping and the like of the substrate processing apparatus 1;
FIG. 4 is a flowchart for explaining an operation of substrate processing in the substrate processing apparatus 1;
FIG. 5 is a diagram for explaining a state of processing in the substrate processing apparatus 1;
FIG. 6 is a diagram for explaining a state of processing in the substrate processing apparatus 1;
FIG. 7 is a diagram for explaining a state of processing in the substrate processing apparatus 1;
FIG. 8 is a diagram for explaining a state of processing in the substrate processing apparatus 1;
FIG. 9 is a diagram illustrating a state of substrate drying processing according to a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Container 20 Processing tank 30 Elevating mechanism 40 1st supply nozzle 50 2nd supply nozzle AI IPA vapor | steam airflow area (organic solvent airflow area)
AN Nitrogen gas flow area (inert gas flow area)
W substrate

Claims (8)

A substrate processing apparatus for performing substrate cleaning processing and drying processing,
A treatment tank for storing pure water and immersing the substrate in pure water to perform a cleaning process;
A container for accommodating the treatment tank;
In a state where the substrate is held in the treatment tank, drainage means for draining pure water stored in the treatment tank,
An organic solvent vapor is discharged into a part of the container to form an organic solvent airflow region, and an inert gas is discharged into a part of the container to form an inert gas airflow region. An airflow region forming means;
Elevating means for elevating the substrate in the container;
After cleaning the substrate with pure water in the treatment tank, the control means for moving the substrate by the elevating means and sequentially passing the organic solvent airflow region and the inert gas airflow region;
Equipped with a,
The airflow region forming means includes
A gas discharge part opened in the container;
A discharge switching means for switching a gas discharged from the gas discharge section between an organic solvent vapor and an inert gas;
The substrate processing apparatus characterized by having a. The substrate processing apparatus according to claim 1,
The airflow region forming means includes
The substrate processing apparatus is characterized in that after the drainage of the pure water from the processing tank by the draining means is finished, the discharge of the organic solvent vapor is started to form an organic solvent air flow region. The substrate processing apparatus according to claim 1 or 2, wherein
Further comprising an inert gas inflow means for allowing an inert gas to flow into the treatment tank,
The substrate processing apparatus, wherein the draining means drains pure water from the processing tank while allowing an inert gas to flow into the processing tank by the inert gas inflow means. A substrate processing apparatus according to any one of claims 1 to 3 ,
Before Symbol control means,
The substrate is raised by the elevating means, and after passing through the organic solvent airflow region formed in a predetermined area in the container, the discharge switching means is switched to the inert gas side to be inert to the area. A substrate processing apparatus, wherein a gas flow region is formed, and the substrate is lowered by the elevating means to pass through an inert gas flow region. The substrate processing apparatus according to claim 1, wherein:
A pressure reducing means for reducing the pressure in the container;
The substrate processing apparatus, wherein after the substrate passes through the air flow region of the inert gas, the pressure reducing unit performs pressure reduction in the container while continuing to discharge the inert gas from the air flow region forming unit. . The substrate processing apparatus according to claim 5,
The decompression means includes
A substrate processing apparatus characterized in that the inside of the container is depressurized in a state where the substrate is positioned below an inert gas flow area. A substrate processing apparatus according to any one of claims 1 to 6,
A substrate processing apparatus, further comprising an inert gas heating unit that heats an inert gas supplied to the airflow region forming unit and the inert gas inflow unit to generate a high-temperature inert gas. A substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus, wherein the organic solvent vapor is isopropyl alcohol vapor.

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