JP2002252201A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that can suppress the transferring of particles onto a wafer by preventing the dissolution of organic solvent steam into pure water. SOLUTION: Nitrogen gas is jetted out of a second supply nozzle 50 in a horizontal direction and nitrogen gas flow covering the surface of pure water stored in the processing tank 20 is formed. Isopropyl alcohol(IPA) steam is jetted out of the first supply nozzle 40 upward and atmosphere including IPA steam is formed at the upper part of the processing tank 20. A substrate W lifted upward out of the processing tank 20 by a lifting equipment, is dried by moving through the nitrogen gas flow and reaching atmosphere including IPA steam. Since the IPA steam from the first supply nozzle 40 is not jetted directly toward pure water and the contact of atmosphere including the IPA steam with pure water is prevented by the nitrogen gas flow, dissolution of the IPA steam into pure water can be prevented and the transferring of particles onto a wafer caused by the dissolution of the IPA steam can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate which has been subjected to a cleaning treatment with pure water, a glass substrate for a liquid crystal display,
The present invention relates to a substrate processing apparatus that performs a drying process on a glass substrate for a photomask, a substrate for an optical disk, and the like (hereinafter, simply referred to as a “substrate”).

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a substrate,
After sequentially performing a treatment with a chemical such as hydrofluoric acid and a cleaning treatment with pure water, a vapor of an organic solvent such as isopropyl alcohol (hereinafter, referred to as “IPA”) is supplied to the periphery of the substrate while the substrate is pulled out of the pure water. A substrate processing apparatus that performs a drying process is used. In particular, in recent years, where the structure of a pattern formed on a substrate is becoming more complicated and finer, a pull-drying method for pulling a substrate from pure water while supplying IPA vapor is becoming mainstream.

[0003] In a conventional pulling-drying type substrate processing apparatus, a processing tank for performing a cleaning treatment with pure water is accommodated in a container. After the completion of the cleaning treatment in the treatment tank, IPA vapor is supplied into the container to form an IPA atmosphere above the treatment tank. Thereafter, the substrate is pulled up from the pure water stored in the processing tank into an IPA atmosphere. In this process, the pure water adhering to the substrate is replaced by IPA,
Evaporation causes the substrate to be dried.

[0004]

However, in the conventional lift-drying type substrate processing apparatus, the IPA vapor supplied above the processing tank dissolves in pure water inside the processing tank, so that particles are generated between the substrates. The problem that transfer of the image occurs occurs.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a substrate processing apparatus capable of preventing vapor of an organic solvent from dissolving in pure water and suppressing transfer of particles. And

[0006]

According to a first aspect of the present invention, there is provided a substrate processing apparatus for performing a drying process on a substrate that has been subjected to a cleaning process using pure water. A treatment tank for immersing the substrate in water to perform a cleaning treatment, a container for accommodating the treatment tank, and a container provided in the container, and discharged in a substantially horizontal direction and stored in the treatment tank. An airflow forming means for forming an airflow covering the surface of the pure water, and provided above the airflow forming means in the container, and discharges an organic solvent vapor upward, and Organic solvent discharging means for forming an atmosphere containing the vapor of the organic solvent, and lifting means for lifting the substrate after the cleaning process from the processing tank through the airflow into an atmosphere containing the vapor of the organic solvent, Prepare.

According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect of the present invention, isopropyl alcohol vapor is discharged to the organic solvent discharging means so that the isopropyl alcohol vapor is discharged above the processing tank. Atmosphere is formed.

According to a third aspect of the present invention, in the substrate processing apparatus according to the first or second aspect of the present invention, the gas flow forming means is provided with a lower flow rate of the organic solvent discharged from the organic solvent discharging means. An organic solvent vapor having a low concentration is discharged to form a gas stream of a low-concentration organic solvent vapor covering the surface of the pure water stored in the treatment tank.

According to a fourth aspect of the present invention, in the substrate processing apparatus according to the first or second aspect of the present invention, the gas flow forming means discharges a nitrogen gas to the pure water stored in the processing tank. A nitrogen gas flow covering the surface is formed.

According to a fifth aspect of the present invention, in the substrate processing apparatus according to the first or second aspect of the present invention, the airflow forming means discharges carbon dioxide and stores the pure water stored in the processing tank. A stream of carbon dioxide gas is formed over the surface.

According to a sixth aspect of the present invention, in the substrate processing apparatus according to the first or second aspect of the present invention, the air flow forming means is provided with a nitrogen gas having a temperature higher than the temperature of the pure water stored in the processing tank. The gas is discharged to form a high-temperature nitrogen gas flow covering the surface of the pure water stored in the processing tank.

According to a seventh aspect of the present invention, there is provided a substrate processing apparatus for performing a drying process on a substrate having been subjected to a cleaning process using pure water, wherein the cleaning process is performed by storing the pure water and immersing the substrate in the pure water. A processing tank to be performed, a container that stores the processing tank, and a liquid nitrogen flow that is provided in the container and that discharges liquid nitrogen in a substantially horizontal direction and covers the surface of pure water stored in the processing tank. The liquid nitrogen flow forming means to be formed, and the liquid nitrogen flow forming means provided in the container above the liquid nitrogen flow forming means, discharges the vapor of the organic solvent upward and discharges the vapor of the organic solvent above the treatment tank. And an evacuation means for evacuation of the substrate having undergone the cleaning process from the treatment tank through the liquid nitrogen flow into an atmosphere containing the vapor of the organic solvent.

[0013]

Embodiments of the present invention will be described below in detail with reference to the drawings.

<1. First Embodiment> FIG. 1 is a front view of a substrate processing apparatus according to the present invention. FIG. 2 is a plan view of the substrate processing apparatus of FIG. FIG. 1 and the following drawings are appropriately provided with an XYZ orthogonal coordinate system in which the XY plane is a horizontal plane and the Z-axis direction is a vertical direction in order to clarify the directional relationship.

This substrate processing apparatus is an apparatus for drying a substrate, which has been subjected to a cleaning treatment with pure water, by IPA, and mainly includes a container 10, a processing tank 20, and a lifting mechanism 3.
0, a first supply nozzle 40, and a second supply nozzle 50.

The processing tank 20 is a tank for storing a chemical solution such as hydrofluoric acid or pure water (hereinafter, these are collectively referred to as “processing liquid”) and sequentially performing surface treatment on the substrate. Housed inside. A processing liquid discharge nozzle (not shown) is disposed near the bottom of the processing tank 20, and a processing liquid supply source (not shown) is supplied from the processing liquid discharge nozzle through the processing liquid discharge nozzle.
The processing liquid can be supplied to the inside. Processing liquid is in processing tank 2
0 is supplied from the bottom of the processing tank 20 and overflows from the upper end of the processing tank 20. The processing tank 20 is also provided with a rapid drainage mechanism (not shown), and the processing liquid stored in the processing tank 20 can be forcibly and rapidly discharged.

The container 10 has a processing tank 20, an elevating mechanism 30, a first supply nozzle 40, and a second supply nozzle 50 therein.
It is a housing for housing the like. The upper part of the container 10 can be opened and closed by a slide opening and closing mechanism (not shown). When the upper portion of the container 10 is open, the substrate can be loaded and unloaded from the open portion. On the other hand, when the upper part of the container 10 is closed, the inside can be made a closed space.

The elevating mechanism 30 is a mechanism for immersing a set of a plurality of substrates W (lot) in the processing liquid stored in the processing tank 20. The lifting mechanism 30 includes a lifter 31, a lifter arm 32, and three holding rods 3 for holding the substrate W.
3, 34, and 35. Three holding rods 33, 3
In each of 4 and 35, a plurality of holding grooves for fitting the outer edge portion of the substrate W and holding the substrate W in an upright posture are provided at predetermined intervals in the X direction. Each holding groove is a notched groove. Three holding rods 33, 34, 3
5 is fixed to the lifter arm 32 and the lifter arm 3
2 is provided so as to be able to move up and down in a vertical direction (Z direction) by a lifter 31.

With such a configuration, the lifting mechanism 30 is
A position (solid line position in FIG. 1) in which the plurality of substrates W, which are arranged and held in parallel with each other in the X direction by the holding rods 33, 34, and 35, are immersed in the processing liquid stored in the processing tank 20. It can be moved up and down between the position (the position indicated by the two-dot chain line in FIG. 1) pulled up from the processing liquid. The lifter 31 can employ various known mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley or a belt as a mechanism for moving the lifter arm 32 up and down. The transfer of the substrate W between the substrate transport robot outside the apparatus and the lift mechanism 30 is performed by positioning the lift mechanism 30 at the position indicated by the two-dot chain line in FIG. 1 and opening the upper part of the container 10. Can be.

Further, inside the container 10, two first supply nozzles 40 are provided. The two first supply nozzles 40 are provided above the second supply nozzle 50, respectively. Each of the first supply nozzles 40 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 41 arranged at equal intervals in the X direction. Each of the plurality of ejection holes 41 is formed with the ejection direction directed upward in the vertical direction. Then, each of the first supply nozzles 40 discharges the vapor of the organic solvent upward from the plurality of discharge holes 41, and can form an atmosphere containing the vapor of the organic solvent above the processing tank 20. In the first embodiment, IPA vapor is discharged from the first supply nozzle 40,
An atmosphere containing IPA vapor is formed above the processing tank 20.

Further, two second supply nozzles 5 are provided inside the container 10 and outside and above the upper end of the processing tank 20.
0 is provided. The second supply nozzles 50 are provided on both sides of the plurality of substrates W being lifted by the lifting mechanism 30. Second supply nozzle 5
0 is a hollow tubular member extending along the X direction, and a plurality of discharge holes 5 arranged at equal intervals in the X direction.
1 is provided. Each of the plurality of discharge holes 51 is formed so that the discharge direction is directed toward the processing tank 20 along the Y direction (horizontal direction). Each of the second supply nozzles 50 can discharge gas in a substantially horizontal direction from the plurality of discharge holes 51 to form an airflow that covers the surface of the pure water stored in the processing tank 20. In the first embodiment, a nitrogen gas (N ₂ ) is discharged from the second supply nozzle 50 to form a nitrogen gas flow covering the surface of pure water stored in the processing tank 20.

The first supply nozzle 40 and the second supply nozzle 50 can be supplied with IPA vapor, nitrogen gas or the like from a supply mechanism outside the container 10. FIG. 3 is a diagram showing a mechanism for supplying gas and the like to the first supply nozzle 40 and the second supply nozzle 50. The first supply nozzle 40 is connected to an IPA supply source 42 and a nitrogen gas supply source 44 via a pipe. By opening the IPA valve 43, the IPA supply source 42 causes the first supply nozzle 40 to receive the IPA.
Steam can be supplied. The IPA vapor supplied to the first supply nozzle 40 is discharged upward from each of the plurality of discharge holes 41.

When the nitrogen gas valve 46 is opened, the first supply nozzle 40 from the nitrogen gas supply source 44 is opened.
Can be supplied with nitrogen gas. First supply nozzle 4
The nitrogen gas supplied to 0 is discharged upward from each of the plurality of discharge holes 41. In addition, in this specification, when simply referred to as “nitrogen gas”, it means nitrogen gas at room temperature.

A heater 45 is provided in the middle of a pipe led from the nitrogen gas supply source 44. By operating the heater 45, the first gas is supplied from the nitrogen gas supply source 44.
The nitrogen gas supplied to the supply nozzle 40 can be heated. Thus, the high-temperature nitrogen gas can be discharged upward from each of the plurality of discharge holes 41 of the first supply nozzle 40.

That is, if the nitrogen gas valve 46 is closed and the IPA valve 43 is opened, IPA vapor can be supplied upward from the first supply nozzle 40, and conversely,
If the PA valve 43 is closed and the nitrogen gas valve 46 is opened, nitrogen gas can be supplied upward. Then, by further operating the heater 45, the high-temperature nitrogen gas can be discharged from the first supply nozzle 40.

The second supply nozzle 50 is connected to the IPA supply source 5
2. It is connected to the nitrogen gas supply source 54, the carbon dioxide gas supply source 57, and the liquid nitrogen supply source 59 via piping. IP
By opening the A valve 53, the IPA source 5
The IPA vapor can be supplied from 2 to the second supply nozzle 50. The IPA vapor supplied to the second supply nozzle 50 is discharged from each of the plurality of discharge holes 51 in a horizontal direction and toward the processing tank 20.

By opening the nitrogen gas valve 56, the second supply nozzle 50 is
Can be supplied with nitrogen gas. Second supply nozzle 5
The nitrogen gas supplied to 0 is discharged from each of the plurality of discharge holes 51 in the horizontal direction toward the processing tank 20.

A heater 55 is provided in the middle of a pipe led from the nitrogen gas supply source 54. By operating the heater 55, the second gas is supplied from the nitrogen gas supply source 54.
The nitrogen gas supplied to the supply nozzle 50 can be heated. Thereby, the high-temperature nitrogen gas can be discharged from each of the plurality of discharge holes 51 of the second supply nozzle 50 in the horizontal direction toward the processing tank 20.

When the carbon dioxide gas valve 58 is opened, the second supply nozzle 50 is
Can be supplied with carbon dioxide (CO ₂ ). Second
The carbon dioxide supplied to the supply nozzle 50 is discharged from each of the plurality of discharge holes 51 horizontally and toward the processing tank 20.

Further, when the liquid nitrogen valve 60 is opened, the second supply nozzle 5 is supplied from the liquid nitrogen supply source 59.
0 can be supplied with liquid nitrogen. The liquid nitrogen supplied to the second supply nozzle 50 is discharged from each of the plurality of discharge holes 51 horizontally and toward the processing tank 20.

That is, if the IPA valve 53 is opened and the other valves are closed, IPA vapor can be discharged in the horizontal direction from the second supply nozzle 50, and the nitrogen gas valve 5
By opening 6 and closing the other valves, nitrogen gas can be discharged in the horizontal direction. By opening the carbon dioxide valve 58 and closing the other valves, carbon dioxide can be discharged in the horizontal direction. By opening the liquid nitrogen valve 60 and closing the other valves, liquid nitrogen can be discharged in the horizontal direction. Then, by further operating the heater 55, the high-temperature nitrogen gas can be discharged from the second supply nozzle 50. The operations of the IPA valve 43, the nitrogen gas valve 46, the heater 45, the IPA valve 53, the nitrogen gas valve 56, the carbon dioxide gas valve 58, the liquid nitrogen valve 60, and the heater 55 shown in FIG. Have been.

In the first embodiment, the first supply nozzle 40 corresponds to an organic solvent discharging means, and the second supply nozzle 50
Corresponds to the airflow forming means, and the elevating mechanism 30 corresponds to the lifting means.

Next, a processing procedure in the first embodiment of the substrate processing apparatus will be described with reference to FIGS. FIGS. 4 to 7 are views for explaining the state of processing in the above-described substrate processing apparatus. Table 1 below shows the first
4 shows a gas supply mode in the embodiment.

[0034]

[Table 1]

When processing a substrate W in the above-described substrate processing apparatus, first, the elevating mechanism 30 receives a plurality of substrates W from a substrate transport robot (not shown). And container 1
0 is sealed, and the plurality of substrates W held by the elevating mechanism 30 arranged in parallel in the X direction
It is immersed in pure water stored at 0. At this stage, the pure water is continuously supplied to the processing tank 20, and the processing tank 2
Pure water continues to overflow from the top of the zero. Processing tank 20
The pure water that has overflowed from the tank is collected by a collection unit provided outside the upper end of the processing tank 20, and discharged to a waste liquid line outside the apparatus.

Next, while maintaining a state in which the plurality of substrates W are immersed in the pure water stored in the processing tank 20, the chemical or pure water is sequentially supplied to the processing tank 20, so that the etching or cleaning processing is determined in advance. Proceed in the order given (FIG. 4
State). Also at this stage, the chemical solution or the pure water continues to overflow from the upper end of the processing tank 20, and the overflowing processing solution is recovered by the recovery unit.

In the state shown in FIG. 4, the gas is supplied in the first step shown in Table 1. That is, FIG.
As indicated by the middle arrow AR4, the high-temperature nitrogen gas is discharged upward from the first supply nozzle 40. As a result, the first supply nozzle 40 is warmed, and the inside of the container 10 is set to a nitrogen atmosphere.
Surface treatment proceeds. In the first step, gas is not supplied from the second supply nozzle 50.

As the surface treatment of the substrate W progresses, a final finish cleaning process is reached. In the present embodiment, the finish cleaning process is also performed by storing pure water in the processing tank 20 and immersing a plurality of substrates W in the pure water, similarly to the normal cleaning process. Note that the gas supply of the first step in Table 1 is performed also in the final finish cleaning process,
A high-temperature nitrogen gas is discharged from the first supply nozzle 40, and a finish cleaning process is performed in a nitrogen atmosphere.

Then, as shown in FIG. 5, before the cleaning process in the processing tank 20 is completed and before the elevating mechanism 30 lifts the substrate W from the pure water, the gas supply in the second step in Table 1 is started. . That is, IPA vapor is discharged upward from the first supply nozzle 40 as shown by an arrow AR51 in FIG.
Nitrogen gas is discharged from the supply nozzle 50 in the horizontal direction. By discharging the nitrogen gas from the second supply nozzle 50 in the horizontal direction, a nitrogen gas flow FL covering the surface of the pure water stored in the processing tank 20 is formed. The nitrogen gas flow FL is formed on the gas-liquid interface substantially in parallel with the surface of the pure water stored in the processing tank 20, and at least the plurality of substrates W are lifted by the elevating mechanism 30 out of the surface. It will be formed so as to cover the region. By discharging the IPA vapor upward from the first supply nozzle 40, an atmosphere AT containing the IPA vapor is formed above the processing tank 20.

After the atmosphere AT containing the nitrogen gas flow FL and the IPA vapor is formed, as shown in FIG. 6, the elevating mechanism 30 starts to lift a plurality of substrates W, and the substrates W
Is withdrawn from the pure water in the processing tank 20 and passed through the nitrogen gas flow FL. At this time, of course, the gas supply in the second step shown in Table 1 is performed, and
The PA vapor is discharged upward, and the nitrogen gas is discharged from the second supply nozzle 50 in a horizontal direction toward the processing tank 20. Therefore, the nitrogen gas is directly blown in order from the upper end to the lower end of the substrate W being lifted by the lifting mechanism 30.

When the lowering portion of the substrate W passes through the nitrogen gas flow FL by the lifting mechanism 30 continuing to lift the plurality of substrates W, as shown in FIG. 7, the entire substrate W contains an atmosphere containing IPA vapor. Move during AT. As a result, the entire substrate W is exposed to the AT in an atmosphere containing the IPA vapor, and the IPA vapor condenses on the surface of each substrate W and replaces the water droplets adhering to the surface. At this stage, the gas supply in the second step shown in Table 1 is performed.

Thereafter, when the substrate W reaches the position indicated by the two-dot chain line in FIG. 1, the elevating mechanism 30 stops, and the lifting of the substrate W is completed. At this point, the gas supply from the first supply nozzle 40 and the second supply nozzle 50 is stopped. The pure water stored in the processing tank 20 is quickly drained. Thereafter, by setting the inside of the container 10 to a reduced pressure atmosphere, the IPA condensed on the surface of the substrate W is completely evaporated and dried. The substrate W after the drying under reduced pressure is transferred to the substrate transfer robot, and a series of processes is completed. If the cleanliness of the substrate W is not sufficient at the time when the substrate W is lifted, pure water is stored again in the processing tank 20,
It is also possible to repeat the steps described with reference to FIGS. 4 to 7 (except for the chemical treatment by supplying the chemical).

In the first embodiment described above, the nitrogen gas flow FL covering the surface of the pure water stored in the processing tank 20 is formed by discharging the nitrogen gas from the second supply nozzle 50 in the horizontal direction. At the same time, by discharging the IPA vapor upward from the first supply nozzle 40, an atmosphere AT containing the IPA vapor is formed on the nitrogen gas flow FL. In other words, the first supply nozzle 40 does not directly discharge the IPA vapor toward the pure water, and further shuts off the atmosphere AT containing the IPA vapor and the pure water by the nitrogen gas flow FL,
Preventing those contacts. Therefore, dissolution of the IPA vapor in pure water can be prevented, and as a result, transfer of particles between the substrates W due to dissolution of the IPA vapor can be suppressed.

Further, when the substrate W is lifted, nitrogen gas is directly blown from the second supply nozzle 50 onto the substrate W on the gas-liquid interface with pure water, so that the drying time is shortened and the drying efficiency is reduced. Thus, drying defects such as watermarks can be suppressed.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40, the first supply nozzle 40 heated by the high-temperature nitrogen gas supplies
PA vapor is discharged, and the first supply nozzle 40
IPA can be prevented from dew condensation. as a result,
It is possible to prevent processing delay due to dew condensation of IPA.

<2. Second Embodiment> Next, the second embodiment of the present invention
An embodiment will be described. The configuration of the substrate processing apparatus of the second embodiment is exactly the same as that of the first embodiment, and a description thereof will be omitted. The difference between the second embodiment and the first embodiment is that
This is a gas supply mode from the first supply nozzle 40 and the second supply nozzle 50. Table 2 below shows gas supply modes in the second embodiment.

[0047]

[Table 2]

In the second embodiment, the gas supply in the first step of Table 2 is performed in the stage where the substrate W is being cleaned in the processing bath 20 (the stage in FIG. 4). That is, high-temperature nitrogen gas is discharged upward from the first supply nozzle 40, and high-temperature nitrogen gas is also discharged horizontally from the second supply nozzle 50. As a result, the first supply nozzle 40 and the second supply nozzle 50 are warmed by the high-temperature nitrogen gas, and the inside of the container 10 is set to the nitrogen atmosphere, and the cleaning process of the substrate W proceeds in the nitrogen atmosphere. .

Then, at the stage of lifting the substrate W from the pure water stored in the processing tank 20 (stages after FIG. 5), gas supply in the second step of Table 2 is performed. That is, the IPA vapor is discharged upward from the first supply nozzle 40, and the dilute IPA vapor is discharged horizontally from the second supply nozzle 50. Here, the IPA concentration of the dilute IPA vapor discharged from the second supply nozzle 50 is lower than the IPA concentration of the IPA vapor discharged from the first supply nozzle 40. Thereby, a dilute IPA gas flow covering the surface of the pure water stored in the processing tank 20 is formed, and an atmosphere containing IPA vapor is formed above the processing tank 20. The substrate W lifted from the processing tank 20 by the elevating mechanism 30 passes through the lean IPA gas flow and
An atmosphere containing vapor A is reached. The processing procedure other than the above is the same as in the first embodiment.

Also in the second embodiment, the IPA vapor is not directly discharged from the first supply nozzle 40 toward the pure water, and the pure water is shut off from the atmosphere AT containing the IPA vapor by the lean IPA gas flow. And prevent their direct contact. The lean IPA gas flow comes into direct contact with the pure water stored in the processing tank 20, but since the IPA concentration is low, the dissolution of the IPA vapor in the pure water is negligibly small. Therefore, dissolution of the IPA vapor in pure water can be prevented, and as a result, transfer of particles between the substrates W due to dissolution of the IPA vapor can be suppressed.

When the substrate W is lifted, the dilute IPA gas flow is directly blown onto the substrate W from the second supply nozzle 50 on the gas-liquid interface with pure water.
Replacement proceeds rapidly, drying time can be shortened, drying efficiency can be improved, and drying defects such as watermarks can be suppressed.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40 and the second supply nozzle 50, the first supply nozzle 40 and the second supply nozzle heated by the high-temperature nitrogen gas are discharged. IP from nozzle 50
A vapor is discharged, so that dew condensation of IPA on them can be prevented.

<3. Third Embodiment> Next, the third embodiment of the present invention
An embodiment will be described. The configuration of the substrate processing apparatus of the third embodiment is completely the same as that of the first embodiment, and a description thereof will be omitted. The third embodiment is different from the first embodiment in that
This is a gas supply mode from the first supply nozzle 40 and the second supply nozzle 50. Table 3 below shows gas supply modes in the third embodiment.

[0054]

[Table 3]

In the third embodiment, the gas supply in the first step in Table 3 is performed at the stage where the substrate W is being cleaned in the processing bath 20 (the stage in FIG. 4). That is, while the high-temperature nitrogen gas is discharged upward from the first supply nozzle 40, the gas is not supplied from the second supply nozzle 50. Accordingly, the first supply nozzle 40 is heated by the high-temperature nitrogen gas, and the inside of the container 10 is set to the nitrogen atmosphere, and the cleaning process of the substrate W proceeds in the nitrogen atmosphere.

Then, in the stage of lifting the substrate W from the pure water stored in the processing tank 20 (stages after FIG. 5), the gas supply in the second step in Table 3 is performed. That is, IPA vapor is discharged upward from the first supply nozzle 40, and carbon dioxide is discharged horizontally from the second supply nozzle 50. Thereby, a carbon dioxide gas flow covering the surface of the pure water stored in the processing tank 20 is formed, and an atmosphere containing IPA vapor is formed above the processing tank 20. The substrate W lifted from the processing tank 20 by the elevating mechanism 30 passes through a carbon dioxide gas flow and reaches an atmosphere containing IPA vapor. The processing procedure other than the above is the same as in the first embodiment.

Also in the third embodiment, the IPA vapor is not directly discharged from the first supply nozzle 40 toward the pure water, and the atmosphere AT containing the IPA vapor and the pure water are cut off by the carbon dioxide gas flow. And prevent their direct contact. Therefore, dissolution of the IPA vapor in pure water can be prevented, and as a result, transfer of particles between the substrates W due to dissolution of the IPA vapor can be suppressed.

Further, when the substrate W is lifted, the carbon dioxide gas flow is directly blown from the second supply nozzle 50 onto the substrate W on the gas-liquid interface with the pure water. Efficiency can be improved, and poor drying such as a watermark can be suppressed.

In particular, in the third embodiment, when the substrate W lifted from the pure water passes through the carbon dioxide gas flow, the carbon dioxide dissolves in water droplets attached to the substrate W, and the water droplets become weakly acidic carbon dioxide. Turns into water. The water mark is generated by a reaction between the moisture attached to the substrate W, silicon (Si), and oxygen in the air. If the moisture attached to the substrate W is acidic, the reaction is suppressed and the water mark is suppressed. Can be more effectively prevented.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40, the first supply nozzle 40 warmed by the high-temperature nitrogen gas supplies
PA vapor is discharged, and the first supply nozzle 40
IPA can be prevented from dew condensation.

<4. Fourth Embodiment> Next, the fourth embodiment of the present invention
An embodiment will be described. The configuration of the substrate processing apparatus of the fourth embodiment is completely the same as that of the first embodiment, and a description thereof will be omitted. The fourth embodiment is different from the first embodiment in that
This is a gas supply mode from the first supply nozzle 40 and the second supply nozzle 50. Table 4 below shows gas supply modes in the fourth embodiment.

[0062]

[Table 4]

In the fourth embodiment, the gas supply in the first step shown in Table 4 is performed at the stage where the substrate W is being cleaned in the processing bath 20 (the stage in FIG. 4). That is, high-temperature nitrogen gas is discharged upward from the first supply nozzle 40, and high-temperature nitrogen gas is also discharged horizontally from the second supply nozzle 50. As a result, the first supply nozzle 40 and the second supply nozzle 50 are warmed by the high-temperature nitrogen gas, and the inside of the container 10 is set to the nitrogen atmosphere, and the cleaning process of the substrate W proceeds in the nitrogen atmosphere. .

Then, at the stage of lifting the substrate W from the pure water stored in the processing tank 20 (stages after FIG. 5), gas supply in the second step of Table 4 is performed. That is, IPA vapor is discharged upward from the first supply nozzle 40, and high-temperature nitrogen gas is discharged horizontally from the second supply nozzle 50. That is, high-temperature nitrogen gas is continuously discharged from the second supply nozzle 50. Here, the high-temperature nitrogen gas discharged from the second supply nozzle 50 is a nitrogen gas whose temperature is higher than the temperature of the pure water stored in the processing tank 20. Thus, a high-temperature nitrogen gas flow covering the surface of the pure water stored in the processing tank 20 is formed, and an atmosphere containing IPA vapor is formed above the processing tank 20. The substrate W lifted from the processing tank 20 by the elevating mechanism 30 passes through a high-temperature nitrogen gas flow and reaches an atmosphere containing IPA vapor. The processing procedure other than the above is the same as in the first embodiment.

Also in the above fourth embodiment, the IPA vapor is not directly discharged from the first supply nozzle 40 toward the pure water, and the atmosphere AT containing the IPA vapor and the pure water are shut off by the high-temperature nitrogen gas flow. And prevent their direct contact. Therefore, dissolution of the IPA vapor in pure water can be prevented, and as a result, transfer of particles between the substrates W due to dissolution of the IPA vapor can be suppressed.

When the substrate W is lifted, a high-temperature nitrogen gas flow is directly blown from the second supply nozzle 50 onto the substrate W on the gas-liquid interface with the pure water. Efficiency can be improved, and poor drying such as a watermark can be suppressed.

In particular, in the fourth embodiment, the processing tank 2
Since a high-temperature nitrogen gas flow is formed at the gas-liquid interface of pure water stored at 0, the water temperature on the surface of the pure water rises. Generally, as the water temperature increases, the solubility of the gas decreases. The same applies to the case of the IPA vapor. When the surface temperature of the pure water stored in the treatment tank 20 increases, the solubility of the IPA vapor decreases. As a result, the dissolution of the IPA vapor in pure water can be more effectively prevented, and the transfer of particles between the substrates W due to the dissolution of the IPA vapor can be further suppressed.

Further, as the substrate W passes through the high-temperature nitrogen gas flow, the temperature of water droplets attached to the substrate W also increases,
Drying efficiency can be further improved.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40, the first supply nozzle 40 heated by the high-temperature nitrogen gas supplies
PA vapor is discharged, and the first supply nozzle 40
IPA can be prevented from dew condensation.

<5. Fifth Embodiment> Next, a fifth embodiment of the present invention will be described.
An embodiment will be described. The configuration of the substrate processing apparatus of the fifth embodiment is completely the same as that of the first embodiment, and a description thereof will be omitted. The fifth embodiment is different from the first embodiment in that
This is a gas supply mode from the first supply nozzle 40 and the second supply nozzle 50. Table 5 below shows a gas supply mode in the fifth embodiment.

[0071]

[Table 5]

In the fifth embodiment, the gas supply in the first step of Table 5 is performed at the stage where the substrate W is being cleaned in the processing bath 20 (the stage in FIG. 4). That is, while the high-temperature nitrogen gas is discharged upward from the first supply nozzle 40, the gas is not supplied from the second supply nozzle 50. Accordingly, the first supply nozzle 40 is heated by the high-temperature nitrogen gas, and the inside of the container 10 is set to the nitrogen atmosphere, and the cleaning process of the substrate W proceeds in the nitrogen atmosphere.

At the stage of lifting the substrate W from the pure water stored in the processing tank 20 (stages after FIG. 5), the gas supply in the second step of Table 5 is performed. That is, IPA vapor is discharged upward from the first supply nozzle 40, and liquid nitrogen is discharged horizontally from the second supply nozzle 50. Thereby, a liquid nitrogen flow covering the surface of the pure water stored in the processing tank 20 is formed, and an atmosphere containing IPA vapor is formed above the processing tank 20. The substrate W lifted from the processing tank 20 by the elevating mechanism 30 passes through the liquid nitrogen flow and reaches an atmosphere containing IPA vapor. The processing procedure other than the above is the same as in the first embodiment.

In the fifth embodiment, the second supply nozzle 50 corresponds to a liquid nitrogen flow forming unit.

Also in the fifth embodiment described above, the IPA vapor is not directly discharged from the first supply nozzle 40 toward the pure water, and the atmosphere AT containing the IPA vapor and the pure water are shut off by the liquid nitrogen flow. They prevent direct contact. Therefore, the dissolution of the IPA vapor in pure water can be prevented, and as a result, the substrate W caused by the dissolution of the IPA vapor can be prevented.
Transfer of particles between them can be suppressed.

In the fifth embodiment, when the substrate W is lifted, the second supply nozzle 5 is placed on the gas-liquid interface with pure water.
Since the liquid nitrogen flow is directly blown onto the substrate W from 0, the substrate W is rapidly cooled. As a result, the efficiency of condensation of IPA vapor on the substrate W is improved, the drying time can be shortened, the drying efficiency can be improved, and drying defects such as watermarks can be effectively suppressed.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40, the first supply nozzle 40 heated by the high-temperature nitrogen gas supplies
PA vapor is discharged, and the first supply nozzle 40
IPA can be prevented from dew condensation.

<6. Sixth Embodiment> Next, the sixth embodiment of the present invention
An embodiment will be described. The configuration of the substrate processing apparatus of the sixth embodiment is exactly the same as that of the first embodiment, and a description thereof will be omitted. The sixth embodiment is different from the first embodiment in that
This is a gas supply mode from the first supply nozzle 40 and the second supply nozzle 50. Table 6 below shows a gas supply mode in the sixth embodiment.

[0079]

[Table 6]

In the sixth embodiment, the gas supply in the first step in Table 6 is performed at the stage where the substrate W is being cleaned in the processing bath 20 (the stage in FIG. 4). That is, high-temperature nitrogen gas is discharged upward from the first supply nozzle 40, and high-temperature nitrogen gas is also discharged horizontally from the second supply nozzle 50. As a result, the first supply nozzle 40 and the second supply nozzle 50 are warmed by the high-temperature nitrogen gas, and the inside of the container 10 is set to the nitrogen atmosphere, and the cleaning process of the substrate W proceeds in the nitrogen atmosphere. .

In the stage of lifting the substrate W from the pure water stored in the processing tank 20 (stages after FIG. 5), the gas supply in the second step in Table 6 is performed. That is, IPA vapor is discharged upward from the first supply nozzle 40, and high-temperature nitrogen gas is discharged horizontally from the second supply nozzle 50. That is, high-temperature nitrogen gas is continuously discharged from the second supply nozzle 50. Here, the high-temperature nitrogen gas discharged from the second supply nozzle 50 is a nitrogen gas whose temperature is higher than the temperature of the pure water stored in the processing tank 20. Thus, a high-temperature nitrogen gas flow covering the surface of the pure water stored in the processing tank 20 is formed, and an atmosphere containing IPA vapor is formed above the processing tank 20. The substrate W lifted from the processing tank 20 by the elevating mechanism 30 passes through a high-temperature nitrogen gas flow and reaches an atmosphere containing IPA vapor.

Next, the gas supply in the third step of Table 6 is performed after the entire substrate W has been separated from the pure water in the processing tank 20 and before the reduced-pressure drying process is performed. That is, the first supply nozzle 40 discharges the nitrogen gas upward, and the second supply nozzle 50 discharges the IPA vapor in the horizontal direction. Then, after the gas is supplied in the third step for a predetermined time, a reduced-pressure drying process is performed. The processing procedure other than the above is the same as in the first embodiment.

Also in the sixth embodiment described above, IPA vapor is not directly discharged from the first supply nozzle 40 toward pure water, and the atmosphere AT containing IPA vapor and pure water are shut off by a high-temperature nitrogen gas flow. And prevent their direct contact. Therefore, dissolution of the IPA vapor in pure water can be prevented, and as a result, transfer of particles between the substrates W due to dissolution of the IPA vapor can be suppressed.

When the substrate W is lifted, a high-temperature nitrogen gas flow is directly blown from the second supply nozzle 50 onto the substrate W on the gas-liquid interface with the pure water, so that the drying time is shortened and the drying time is reduced. Efficiency can be improved, and poor drying such as a watermark can be suppressed.

In particular, in the sixth embodiment, as in the fourth embodiment, since a high-temperature nitrogen gas flow is formed at the gas-liquid interface of the pure water stored in the processing tank 20, the water temperature on the surface of the pure water is reduced. To rise. Therefore, the solubility of the IPA vapor on the surface of the pure water stored in the treatment tank 20 is reduced, and as a result, the dissolution of the IPA vapor in the pure water can be more effectively prevented,
Transfer of particles between the substrates W due to dissolution of the IPA vapor can be further suppressed.

Further, as the substrate W passes through the high-temperature nitrogen gas flow, the temperature of water droplets attached to the substrate W also increases,
Drying efficiency can be further improved.

Since the high-temperature nitrogen gas is discharged before the IPA vapor is discharged from the first supply nozzle 40, the first supply nozzle 40 heated by the high-temperature nitrogen gas supplies
PA vapor is discharged, and the first supply nozzle 40
IPA can be prevented from dew condensation.

Further, in the sixth embodiment, the substrate W
After the entire structure is separated from the pure water in the processing tank 20, the IPA vapor is discharged from the second supply nozzle 50 in the horizontal direction. This IPA vapor is mainly supplied to the periphery of three holding rods 33, 34 and 35 that hold the substrate W,
Condensed to 3, 34, 35 and replaced with water droplets. Therefore, the three holding rods 33, 34, and 35 that are in direct contact with the substrate W are dried quickly, and the time required for the entire drying process can be shortened and the drying efficiency can be improved.

<7. Modifications> While the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described examples. For example, various gas supply modes have been described in the above embodiments. However, the present invention is not limited thereto, and an atmosphere including IPA vapor formed above the processing tank and pure water stored in the processing tank may be used. Various patterns can be adopted as long as the gas supply mode forms an airflow covering the surface of the pure water so as to block the flow.

In the fifth embodiment, liquid nitrogen is discharged from the second supply nozzle 50. However, cooled nitrogen gas may be discharged instead of liquid nitrogen. Specifically, for example, the nitrogen gas supplied from the nitrogen gas supply source 54 is cooled using a cooler instead of the heater 55, and is discharged from the second supply nozzle 50 in the horizontal direction. Even in this case, the substrate W is cooled by the cooled nitrogen gas when the substrate W is lifted, so that the efficiency of condensing the IPA vapor on the substrate W is improved, the drying time is shortened, and the drying efficiency is improved. be able to.

In each of the above embodiments, the first
Although the IPA vapor was discharged from the supply nozzle 40 as the vapor of the organic solvent, the present invention is not limited to this. The first supply of the vapor of the alcohol as the vapor of the organic solvent instead of the IPA vapor is performed. You may make it discharge from the nozzle 40.

The substrate processing apparatus of each of the above embodiments is
Although a so-called batch type substrate processing apparatus that performs processing on a plurality of substrates W collectively, a so-called single-wafer type substrate processing apparatus that processes substrates W one by one may be used.

Further, in each of the above embodiments, a so-called one-bath processing apparatus is used, in which one processing tank performs both the chemical processing and the cleaning processing with pure water. Also, the present invention is applicable to a so-called multi-tank type processing apparatus in which pure water cleaning processing is performed in different processing tanks. When applied to a multi-tank type processing apparatus, it is generally effective to apply it to the final finishing washing tank.

[0094]

As described above, according to the first aspect of the present invention, an airflow is formed to cover the surface of pure water stored in the processing tank, and the vapor of the organic solvent is contained above the processing tank. An atmosphere is formed, and the substrate after the cleaning process is passed from the processing tank to the atmosphere containing the vapor of the organic solvent to be drawn into the atmosphere containing the vapor of the organic solvent. Is prevented from dissolving the vapor of the organic solvent in pure water, and the transfer of particles can be suppressed.

According to the second aspect of the present invention, since the organic solvent discharging means discharges the isopropyl alcohol vapor to form an atmosphere containing the isopropyl alcohol vapor above the processing tank, the pure isopropyl alcohol vapor is removed. The transfer of particles can be suppressed by preventing dissolution in water.

According to the third aspect of the present invention, the gas flow forming means discharges the organic solvent vapor having a lower concentration than the organic solvent vapor discharged from the organic solvent discharging means, and stores the vapor in the processing tank. A low-concentration organic solvent vapor stream that covers the surface of the pure water prevents the contact between the atmosphere containing the organic solvent vapor and the pure water in the treatment tank. Can be prevented, and the transfer of particles can be suppressed.

According to the fourth aspect of the present invention, the gas flow forming means discharges nitrogen gas to form a nitrogen gas flow covering the surface of the pure water stored in the processing tank. The contact between the atmosphere containing the vapor of the organic solvent and the pure water in the treatment tank is prevented, and the dissolution of the vapor of the organic solvent in the pure water can be prevented, whereby the transfer of particles can be suppressed.

According to the fifth aspect of the present invention, since the gas flow forming means discharges carbon dioxide to form a carbon dioxide gas flow covering the surface of the pure water stored in the treatment tank, the carbon dioxide gas flow is formed. The flow prevents the atmosphere containing the vapor of the organic solvent from coming into contact with the pure water in the treatment tank, prevents the vapor of the organic solvent from dissolving in the pure water, and suppresses the transfer of particles.

Further, according to the invention of claim 6, the air flow forming means discharges a nitrogen gas having a temperature higher than the temperature of the pure water stored in the processing tank to clean the surface of the pure water stored in the processing tank. The high-temperature nitrogen gas flow prevents the atmosphere containing the organic solvent vapor from coming into contact with the pure water in the treatment tank, thereby preventing the organic solvent vapor from dissolving in the pure water. Thus, transfer of particles can be suppressed.

According to the seventh aspect of the present invention, a liquid nitrogen flow covering the surface of pure water stored in the processing tank is formed, and an atmosphere containing an organic solvent vapor is formed above the processing tank. Since the substrate after the cleaning process is pulled up from the processing tank through the liquid nitrogen flow into an atmosphere containing the vapor of the organic solvent, the liquid nitrogen flow causes the atmosphere containing the vapor of the organic solvent and the pure water in the processing tank to be removed. Is prevented from contacting the organic solvent, and the transfer of particles can be suppressed by preventing the vapor of the organic solvent from dissolving in pure water.

[Brief description of the drawings]

FIG. 1 is a front view of a substrate processing apparatus according to the present invention.

FIG. 2 is a plan view of the substrate processing apparatus of FIG.

FIG. 3 is a diagram showing a mechanism for supplying gas and the like to a first supply nozzle and a second supply nozzle.

FIG. 4 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 5 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 6 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 7 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Container 20 Processing tank 30 Elevating mechanism 40 1st supply nozzle 50 2nd supply nozzle AT Atmosphere containing IPA vapor FL Nitrogen gas flow W Substrate

Continued on the front page F term (reference) 3B201 AA03 AB01 AB44 BB11 BB82 CC11 3L113 AA05 AB02 AC01 AC23 AC26 AC46 AC48 AC52 AC67 BA34 CA20 CB01 CB12 CB15 CB17 CB23 CB34 DA04

Claims (7)

[Claims] 1. A substrate processing apparatus for performing a drying process on a substrate that has been subjected to a cleaning process using pure water, comprising: a processing tank that stores pure water and immerses the substrate in the pure water to perform a cleaning process; A container accommodating the processing tank, and an airflow forming means provided in the container and configured to discharge gas in a substantially horizontal direction to form an airflow covering the surface of the pure water stored in the processing tank, Provided above the airflow forming means in the container,
An organic solvent discharging means for discharging vapor of the organic solvent upward to form an atmosphere containing the vapor of the organic solvent above the processing tank; and A substrate processing apparatus, comprising: a lifting means for passing the organic solvent through an atmosphere containing the vapor of the organic solvent. 2. The substrate processing apparatus according to claim 1, wherein said organic solvent discharging means discharges isopropyl alcohol vapor to form an atmosphere containing isopropyl alcohol vapor above said processing tank. Substrate processing equipment. 3. The substrate processing apparatus according to claim 1, wherein the airflow forming unit discharges a vapor of the organic solvent having a lower concentration than a vapor of the organic solvent discharged from the organic solvent discharging unit. And forming a gas stream of a low-concentration organic solvent vapor covering the surface of the pure water stored in the processing tank. 4. The substrate processing apparatus according to claim 1, wherein the gas flow forming unit discharges a nitrogen gas to form a nitrogen gas flow covering a surface of the pure water stored in the processing tank. A substrate processing apparatus. 5. The substrate processing apparatus according to claim 1, wherein the airflow forming unit discharges carbon dioxide to generate a carbon dioxide gas flow covering the surface of the pure water stored in the processing tank. A substrate processing apparatus characterized by forming. 6. The substrate processing apparatus according to claim 1, wherein the airflow forming unit discharges a nitrogen gas having a temperature higher than a temperature of pure water stored in the processing tank. A high-temperature nitrogen gas flow covering the surface of the pure water stored in the substrate processing apparatus. 7. A substrate processing apparatus for performing a drying process on a substrate that has been subjected to a cleaning process using pure water, comprising: a processing tank that stores pure water and immerses the substrate in the pure water to perform a cleaning process; A container accommodating the processing tank, and a liquid nitrogen flow provided in the container and discharging liquid nitrogen in a substantially horizontal direction to form a liquid nitrogen flow covering the surface of the pure water stored in the processing tank. Forming means, provided above the liquid nitrogen flow forming means in the container, and discharging the vapor of the organic solvent upward to form an atmosphere containing the vapor of the organic solvent above the processing tank. A substrate, wherein the substrate after the cleaning process is passed through the liquid nitrogen flow from the processing tank and pulled into an atmosphere containing the vapor of the organic solvent. Processing equipment.