CN111312580A - Micro-amplitude vibration method for high-aspect-ratio graphic wafer - Google Patents
Micro-amplitude vibration method for high-aspect-ratio graphic wafer Download PDFInfo
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- CN111312580A CN111312580A CN202010125636.4A CN202010125636A CN111312580A CN 111312580 A CN111312580 A CN 111312580A CN 202010125636 A CN202010125636 A CN 202010125636A CN 111312580 A CN111312580 A CN 111312580A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
The invention discloses a micro-vibration method for a high-aspect-ratio graphic wafer, which provides a wafer drying device and a plurality of graphic wafers, wherein the wafer drying device comprises a drying chamber, a wafer accommodating chamber for accommodating the wafer and a constant-temperature and constant-pressure gas supply device, the drying chamber is used for retaining a gas, the drying chamber comprises a first inlet, a first outlet and an inner wall structure extending from the first inlet to the first outlet, and the wafer accommodating chamber is arranged in the drying chamber and comprises a plurality of washing tanks matched with the wafers. The invention can remove the water in the depletion region in the wafer with the high aspect ratio pattern by arranging the vibration structure which can make the wafer accommodating chamber slightly swing around a support at the bottom of the wafer accommodating chamber and slightly swing the wafer accommodating chamber in the process of step S3 to separate out the water molecules in the pore structure.
Description
Technical Field
The invention relates to the technical field of wafer drying, in particular to a micro-amplitude vibration method for a high-aspect-ratio graphic wafer.
Background
In the field of semiconductor manufacturing, the wet process has a relatively large share, however, the final section of the wet process requires a wafer drying process, and the wafer cleaning process needs to be performed to maintain cleanliness and remove residual water molecules on the wafer surface or various organic solvents or other related solvents of the drying process. In some specific microstructure patterns of the wafer, cavity-type structures with large-scale or different-layer-degree hollow hole regions exist under the patterned structures, the patterned structures are distributed compactly, and partial water molecules or residual liquid are promoted to permeate into the hollow hole structures with high aspect ratio by the action of the attractive force due to the capillary phenomenon during drying after the wafer is cleaned, however, the residual water molecules in the partial regions cannot be removed by the existing drying method.
Disclosure of Invention
The invention aims to provide a micro-amplitude vibration method capable of removing moisture in a depletion region in a wafer with a high aspect ratio pattern.
In order to achieve the purpose, the invention provides the following technical scheme: a slight vibration method for a high-aspect-ratio graphic wafer is provided, wherein a wafer drying device and a plurality of graphic wafers are provided, the wafer drying device comprises a drying chamber, a wafer accommodating chamber and a constant-temperature constant-pressure gas supply device, the wafer accommodating chamber is used for accommodating the wafers, the drying chamber is used for retaining one gas, the drying chamber comprises a first inlet, a first outlet and an inner wall structure, the inner wall structure extends from the first inlet to the first outlet, the wafer accommodating chamber is arranged inside the drying chamber and comprises a plurality of washing grooves matched with the wafers; the constant-temperature and constant-pressure gas supply device is used for supplying inert drying gas with constant temperature and enabling the inert drying gas to flow along a gas circulation path formed in the drying chamber under constant pressure, the drying chamber further comprises a third inlet used for introducing isopropanol liquid into the drying chamber and a third outlet used for discharging the isopropanol, and the third inlet and the third outlet are arranged on one side, far away from the first inlet, in the drying chamber;
the micro-amplitude vibration method comprises the following steps:
s1, placing the graphic wafers to be dried into a wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form wafer gaps;
step S2, opening the third inlet under the state that the third outlet is closed, introducing isopropanol liquid into the drying chamber until each wafer in the wafer accommodating chamber is completely immersed in the isopropanol liquid, closing the third inlet for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafers, opening the third outlet to completely discharge the isopropanol liquid, and closing the third outlet;
step S3, hermetically connecting the output port of the constant-temperature and constant-pressure gas supply device with the first inlet, and leading the first inlet to introduce constant-temperature and constant-pressure hot nitrogen gas into the drying chamber according to a ventilation adjustment strategy so as to remove the water on the surface of the wafer before the volatilization point by utilizing the two-phase fusion and phase change of the hot nitrogen gas phase and the isopropanol liquid phase;
step S4, the inert dry gas flows to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer through the first inlet, and flows into the interlayer region at the one side;
step S5, the inert dry gas flows from one side far away from the first inlet to the other side close to the first inlet in the interlayer area and then is discharged through the first outlet;
the micro-amplitude vibration method further includes disposing a vibration structure at the bottom of the wafer accommodating chamber to enable the wafer accommodating chamber to slightly swing around a support, and enabling the wafer accommodating chamber to slightly swing in the process of step S3 to continuously break the surface tension of the water molecules and the high aspect ratio pore structures in the pattern wafer through the interaction of the hot nitrogen and the isopropyl alcohol so as to separate out the water molecules in the pore structures.
Preferably, the inner wall structure comprises an interlayer region, the interlayer region is provided with two openings, the two openings comprise a second inlet arranged on one side far away from the first inlet in the drying chamber and a second outlet arranged on one side far away from the second inlet in the drying chamber, and the second outlet is communicated with the first outlet.
Preferably, the at least three gas flow paths include a first path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer gap, a second path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer washing tank, a third path from the first inlet to the bottom opening of the wafer accommodating chamber through the outer sidewall of the wafer accommodating chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer sidewall of the interlayer region.
Preferably, the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber and a gas flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber.
Preferably, the on-off time control step is set according to the wetting degree of the wafer, and the gas flow angle adjusting step is set according to the diameter of the wafer.
Preferably, the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer to spray the wafer.
Preferably, the drying method further comprises the steps of arranging a quick exhaust pipeline at the first outlet, connecting the other end of the quick exhaust pipeline with an air exhaust device, and exhausting air by the air exhaust device to form an outward traction pressure so that the hot nitrogen in the drying chamber flows along the air circulation path at an accelerated speed and is exhausted to the designated exhaust area through the quick exhaust pipeline.
Preferably, the drying method further comprises intermittently opening and closing the third outlet during the introduction of the hot nitrogen gas to enhance and optimize the flow paths of the nitrogen gas stream and the isopropanol liquid stream without changing the shape configuration of various components in the tank body.
Compared with the prior art, the invention has the beneficial effects that:
the invention arranges a vibration structure which can make the wafer holding chamber swing slightly around a support at the bottom of the wafer holding chamber, and makes the wafer holding chamber swing slightly in the process of step S3 to continuously destroy the surface tension of water molecules in the pattern wafer sheet and the high aspect ratio pore structure through the interaction of hot nitrogen and isopropanol so as to separate out the water molecules in the pore structure, thereby removing the water in the depletion region in the wafer with the high aspect ratio pattern.
Drawings
FIG. 1 is a schematic view of a wafer drying apparatus according to the present invention;
FIG. 2 is a schematic view of a gas flow path according to the present invention;
FIG. 3 is a schematic view of a wafer-holding chamber according to the present invention;
FIG. 4 is a schematic cross-sectional view taken along the line B-B of FIG. 3 according to the present invention;
FIG. 5 is a schematic structural view of an anodic oxidation insulation layer according to the present invention;
FIG. 6 is a schematic view showing the structure of the flow of the heated nitrogen gas in the anodic oxidation insulation layer according to the present invention;
FIG. 7 is a schematic view of the connection of the anodic oxidation insulation layer with the vibrating structure and the wafer receiving chamber in the present invention;
FIG. 8 is a schematic view of the connection between the vibrating structure and the wafer chamber according to the present invention;
FIG. 9 is a schematic view of the driving mechanism of the present invention;
FIG. 10 is a schematic structural view of a vibrating structure according to the present invention;
fig. 11 is a schematic view of a structure state of the wafer in the wafer chamber driven by the vibration structure to slightly swing according to the present invention.
In the figure: 1. a drying chamber; 101. a first inlet; 102. a first outlet; 103. an interlayer region; 1031. a second inlet; 1032. a second outlet; 104. a third inlet; 105. a third outlet; 106. a tapered structure; 2. a wafer accommodating chamber; 201. a washing tank; 3. an exhaust duct; 301. a gas hold-up zone; 4. a vibrating structure; 401. a support assembly; 402. a drive mechanism; 4021. a drive motor; 4022. a wheel pendulum coupling adapter; 4023. rotating the disc; 4024. a connecting rod; 4025. a fixing plate; 4026. connecting blocks; 4027. a vertical guide rail; 4028. a traction block; 5. a wafer; 6. an anodic oxidation heat-insulating layer; 601. an auxiliary tubular heater.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-11, according to an embodiment of the present invention, a slight vibration method for a high aspect ratio patterned wafer is provided, which includes providing a wafer drying apparatus and a plurality of patterned wafers 5, wherein the wafer drying apparatus includes a drying chamber 1, a wafer accommodating chamber 2 for accommodating wafers, and a constant temperature and constant pressure gas supplier, the drying chamber 1 is configured to retain a gas, the drying chamber 1 includes a first inlet 101 and a first outlet 102, and an inner wall structure extending from the first inlet 101 to the first outlet 102, the wafer accommodating chamber 2 is disposed inside the drying chamber 1, and includes a plurality of washing grooves 201 matching the wafers 5; the constant temperature and pressure gas supplier is used for providing inert drying gas with constant temperature and enabling the inert drying gas to flow along a gas circulation path formed inside the drying chamber 1 under constant pressure, the drying chamber 1 further comprises a third inlet 104 used for introducing isopropanol liquid into the drying chamber 1 and a third outlet 105 used for discharging the isopropanol, and the third inlet 104 and the third outlet 105 are arranged on one side of the drying chamber 1 far away from the first inlet 101;
the micro-amplitude vibration method comprises the following steps:
step S1, placing the pattern wafers 5 to be dried into the wafer accommodating chamber 2, and placing each wafer 5 into the corresponding washing tank 201 with a space therebetween to form a wafer 5 gap;
step S2, opening the third inlet 104 to introduce the isopropanol liquid into the drying chamber 1 until each wafer 5 in the wafer accommodating chamber 2 is completely immersed in the isopropanol liquid when the third outlet 105 is closed, closing the third inlet 104 for 1-3min to completely compatibilize the isopropanol molecules with the water molecules on the wafer 5, opening the third outlet 105 to completely discharge the isopropanol liquid, and closing the third outlet 105;
step S3, hermetically connecting the output port of the constant temperature and pressure gas supply device with the first inlet 101, and introducing constant temperature and pressure hot nitrogen gas into the drying chamber 1 through the first inlet 101 according to the ventilation adjustment strategy, so as to remove the moisture on the surface of the wafer 5 before the volatilization point by utilizing the two-phase fusion and phase change of the hot nitrogen gas phase and the isopropyl alcohol liquid phase;
step S4, the inert dry gas flows into the drying chamber 1 along at least three gas flow paths passing through the wafer 5 through the first inlet 101 to a side away from the first inlet 101, and flows into the interlayer region 103 at the side;
step S5, the inert dry gas flows into the interlayer region 103 from the first inlet 101 to the other side close to the first inlet 101 and then is discharged through the first outlet 102;
the micro-vibration method further includes disposing a vibrating structure 4 at the bottom of the wafer accommodating chamber 2 for enabling the wafer accommodating chamber 2 to slightly swing around a support, and enabling the vibrating structure to slightly swing during the step S3 to continuously break the surface tension of the water molecules and the high aspect ratio pore structures in the pattern wafer 5 through the interaction of the hot nitrogen and the isopropyl alcohol so as to separate out the water molecules in the pore structures.
The buffer layer effect that heating nitrogen gas is not exposed to the exhaust pipeline area accidentally is achieved through the arrangement of the interlayer area 103, the utilization efficiency of the heating nitrogen gas is improved, and the four gas flow paths passing through the wafer 5 are arranged to dry the surface of the wafer 5, the edge of the wafer accommodating chamber 2 and the outer side wall of the interlayer area 103 respectively, so that the drying efficiency of the wafer 5 is effectively improved.
Preferably, the inner wall structure comprises an interlayer region 103, the interlayer region 103 has two openings, including a second inlet 1031 arranged at a side of the drying chamber 1 far away from the first inlet 101 and a second outlet 1032 arranged at a side of the drying chamber 1 far away from the second inlet 1031, and the second outlet 1032 is communicated with the first outlet 102.
Preferably, the at least three gas flow paths include a first path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the gap of the wafer 5, a second path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the wafer 5 washing tank 201, a third path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the outer sidewall of the wafer accommodating chamber 2, and a fourth path from the first inlet 101 to the second inlet 1031 of the interlayer region 103 through the outer sidewall of the interlayer region 103.
Preferably, the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber 1 and a gas flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber 1.
Preferably, the on-off time control step is set according to the wetting degree of the wafer 5, and the gas flow angle adjustment step is set according to the diameter of the wafer 5.
Preferably, the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer 5 to spray the wafer 5.
Preferably, the injection method of the heated nitrogen gas needs to be configured with a groove body size suitable for the size of the wafer and nitrogen gas nozzles arranged in an array, the nitrogen gas nozzles arranged in the array can be installed on a door plate of a symmetrically opening and closing link device, and the nitrogen gas nozzles can be installed at the lower end of the opening and closing door plate, so that the unnecessary configuration of relative space is reduced. The nitrogen nozzle is arranged at a position exceeding the highest point of the wafer 5, so that an aerosol line sprayed and heated by the nitrogen nozzle can be completely sprayed on the wafer 5. The spraying range of the nitrogen nozzle is controlled to be 100-130 degrees in total by the bidirectional expansion of the central line of the nozzle, and the symmetrical left and right side nozzles are utilized to form a spraying range with the spraying ranges of the nozzles at the two sides being intersected, so that the complete wafer 5 can be effectively covered when the nitrogen nozzle is used for spraying the heated nitrogen.
Preferably, the drying method further comprises arranging a quick exhaust pipeline 3 at the first outlet 102, connecting the other end of the quick exhaust pipeline 3 with an air suction device, and performing air suction by the air suction device to form an outward pulling pressure so as to accelerate the hot nitrogen in the drying chamber 1 to flow along the gas flow path and discharge the hot nitrogen to a designated discharge area through the quick exhaust pipeline 3.
Under the requirement of enhancing and optimizing the flow path of the air flow and the liquid flow, the interference of the shape configuration of various components in the tank body on the air flow and the liquid flow needs to be reduced, and the arrangement of the exhaust pipeline 3 and the air extraction equipment enhances the flow field distribution, so that the exhaust efficiency and the drying efficiency are greatly improved.
By using the part jointed with the outer groove body of the drying chamber 1, a gas retention area 301 for buffering is arranged, a continuous discharge path formed by the interlayer area 103 → the gas retention area 301 → the exhaust duct 3 is formed, and a discharge path with buffering effect with the gas retention area 301 is adopted to ensure that the gas flow can effectively form a specific exhaust path for flowing instead of directly jointing the exhaust duct 3 on the outer groove body.
In this embodiment, the drying method further includes designing the bottom of the drying chamber 1 to have a tapered structure 106 with a downward inclined angle so that the isopropanol liquid can form a spiral flow distribution when being discharged, so that the isopropanol molecules can be uniformly adhered to the surface of the wafer.
Preferably, the drying method further comprises intermittently opening and closing the third outlet 105 during the introduction of the hot nitrogen gas to enhance and optimize the flow paths of the nitrogen gas stream and the isopropanol liquid stream without changing the shape configuration of various components in the tank body.
As shown in fig. 3 and 4, under the influence of the pumping device and the exhaust duct 3, the direction of the drying flow field in the gap between the wafers 5 is changed, so that the contact time between the wafer surface and the hot nitrogen is increased, and the exhaust efficiency and the drying efficiency are improved.
As shown in fig. 5, it is preferable that an anodic oxidation insulating layer 6 for maintaining the thermal kinetic energy of the stable hot nitrogen is designed on the outer side wall of the drying chamber 1, and an auxiliary tubular heater 601 is embedded in the anodic oxidation insulating layer 6 for auxiliary heating; furthermore, electronic thermometers for detecting temperature are respectively arranged on the outer side wall of the drying chamber 1 and the inner side wall of the drying chamber 1, and the auxiliary tubular heater 601 is controlled to heat by detecting the temperature difference corresponding to the inner side and the outer side in a linkage manner, so that the temperature of the hot nitrogen in the drying chamber 1 is controlled and adjusted. The auxiliary tubular heater 601 can provide the thermal kinetic energy lost in the drying process for the hot nitrogen gas, and avoid the uneven drying of the upper and lower ends of the wafer 5 caused by the reduction of the temperature of the hot nitrogen gas from top to bottom.
As shown in fig. 6, which is a schematic view of the air flow structure of the nitrogen heated by the anodic oxidation insulating layer 6 in the present invention, the thermal energy provided by the insulating layer to the hot nitrogen diffuses from the sidewall of the drying chamber 1 to the inside of the drying chamber 1, and at the same time, the moisture on the wafer 5 is volatilized outside the wafer 5 under the action of the hot nitrogen.
The drying chamber 1 further comprises a third inlet 104 for introducing isopropyl alcohol liquid into the drying chamber 1 and a third outlet 105 for discharging isopropyl alcohol, and the third inlet 104 and the third outlet 105 are both disposed on a side of the drying chamber 1 far from the first inlet 101. Opening the third inlet 104 to introduce the isopropanol liquid into the drying chamber 1 under the state that the third outlet 105 is closed until each wafer 5 in the wafer accommodating chamber 2 is completely immersed in the isopropanol liquid, closing the third inlet 104 for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafer 5, opening the third outlet 105 to ensure that the isopropanol liquid is completely discharged, and closing the third outlet 105; then, the output port of the constant temperature and pressure gas supplier is hermetically connected to the first inlet 101, and the first inlet 101 is used for introducing constant temperature and pressure hot nitrogen gas into the drying chamber 1 according to the ventilation adjustment strategy, so that the moisture on the surface of the wafer 5 is removed before the volatilization point by utilizing the two-phase fusion and phase change of the hot nitrogen gas phase and the isopropanol liquid phase.
As shown in fig. 7-8, due to the pattern on the wafer 5, the capillary phenomenon caused by the surface tension of the pattern with high aspect ratio can cause water to be adsorbed in the holes or pillars with high aspect ratio, causing the possibility of water molecules to flow back into the huge depletion region under the pattern, drying of the surface during drying, but still keeping most of the water deposited in the depletion zone, can result in poor drying, the drying method in this embodiment further comprises providing a vibrating structure 4 at the bottom of the wafer accommodating chamber 2 for slightly swinging the wafer accommodating chamber 2 around a support, and the wafer is oscillated slightly during step S3 to continuously break down the surface tension of the water molecules and the high aspect ratio pore structures in the wafer 5 with the high aspect ratio pore structures through the interaction of the hot nitrogen and the isopropyl alcohol, so that the water molecules in the depletion region of the wafer 5 are continuously separated out.
As shown in fig. 9-11, the vibrating structure 4 includes a supporting module 401 for supporting the wafer accommodating chamber 2 and a driving mechanism 402 for driving the supporting module 401 to slightly swing, the driving mechanism 402 includes a pendulum coupling adapter 4022 and a driving motor 4021 for driving the pendulum coupling adapter 4022 to rotate, the pendulum coupling adapter 4022 is connected to a rotating disc 4023 for driving the rotating disc 4023 to rotate, the rotating disc 4023 is fixedly connected to a connecting rod 4024, an upper end of the connecting rod 4024 is rotatably connected to a fixing plate 4025, two ends of the fixing plate 4025 are respectively provided with a connecting block 4026, a traction block 4028 fixedly connected to the supporting module 401 is fixedly mounted at a top end of the fixing plate 4025, and the connecting blocks 4026 are respectively connected to the vertical guide rails 4027 in a sliding manner; the wheel pendulum coupling adapter 4022 drives the adapter plate to rotate through the driving motor 4021, and then drives the traction block 4028 on the fixing plate 4025 to move up and down through the adapter plate, and drives one side of the support assembly 401 to swing up and down through the traction block 4028.
The vibration structure 4 provides a supporting function to execute micro-amplitude swinging by designing a swinging motion mechanism, so that the wafer 5 placed in the drying device can slightly swing, water molecules in the specially patterned high-depth-to-width ratio structure can continuously destroy the surface tension of the water molecules and the high-depth-to-width ratio pore structure under the interaction of heating nitrogen and isopropanol in the drying process, and water molecules in the capillary phenomenon of a depletion region are reversely and continuously separated out to perform the drying reaction of water molecule replacement.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (8)
1. A slight vibration method for a high-aspect-ratio graphic wafer is characterized in that a wafer drying device and a plurality of graphic wafers are provided, the wafer drying device comprises a drying chamber, a wafer accommodating chamber and a constant-temperature constant-pressure gas supply device, the wafer accommodating chamber is used for accommodating the wafers, the drying chamber is set to be used for retaining one gas, the drying chamber comprises a first inlet, a first outlet and an inner wall structure, the inner wall structure extends from the first inlet to the first outlet, the wafer accommodating chamber is arranged inside the drying chamber and comprises a plurality of washing tanks matched with the wafers; the constant-temperature and constant-pressure gas supply device is used for supplying inert drying gas with constant temperature and enabling the inert drying gas to flow along a gas circulation path formed in the drying chamber under constant pressure, the drying chamber further comprises a third inlet used for introducing isopropanol liquid into the drying chamber and a third outlet used for discharging the isopropanol, and the third inlet and the third outlet are arranged on one side, far away from the first inlet, in the drying chamber;
the micro-amplitude vibration method comprises the following steps:
s1, placing the graphic wafers to be dried into a wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form wafer gaps;
step S2, opening the third inlet under the state that the third outlet is closed, introducing isopropanol liquid into the drying chamber until each wafer in the wafer accommodating chamber is completely immersed in the isopropanol liquid, closing the third inlet for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafers, opening the third outlet to completely discharge the isopropanol liquid, and closing the third outlet;
step S3, hermetically connecting the output port of the constant-temperature and constant-pressure gas supply device with the first inlet, and leading the first inlet to introduce constant-temperature and constant-pressure hot nitrogen gas into the drying chamber according to a ventilation adjustment strategy so as to remove the water on the surface of the wafer before the volatilization point by utilizing the two-phase fusion and phase change of the hot nitrogen gas phase and the isopropanol liquid phase;
step S4, the inert dry gas flows to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer through the first inlet, and flows into the interlayer region at the one side;
step S5, the inert dry gas flows from one side far away from the first inlet to the other side close to the first inlet in the interlayer area and then is discharged through the first outlet;
the micro-amplitude vibration method further comprises the step of arranging a vibration structure capable of enabling the wafer accommodating chamber to slightly swing around a support at the bottom of the wafer accommodating chamber, and enabling the vibration structure to slightly swing in the process of the step S3 to destroy the surface tension of the pore structure of the water molecules in the pattern wafer so as to separate out the water molecules in the pore structure.
2. The micro-vibration method of claim 1, wherein: the inner wall structure comprises an interlayer region, the interlayer region is provided with two openings and comprises a second inlet and a second outlet, the second inlet is arranged in the drying chamber and far away from one side of the first inlet, the second outlet is arranged in the drying chamber and far away from one side of the second inlet, and the second outlet is communicated with the first outlet.
3. The micro-vibration method of claim 2, wherein: the at least three gas circulation paths comprise a first path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer gap, a second path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer washing tank, a third path from the first inlet to the bottom opening of the wafer accommodating chamber through the outer side wall of the wafer accommodating chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer side wall of the interlayer region.
4. A micro-vibration method for high aspect ratio patterned wafers as claimed in any of claims 1-3 wherein: the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber and an air flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber.
5. The micro-vibration method of claim 4, wherein: the on-off time control step is set according to the wetting degree of the wafer, and the air flow angle adjusting step is set according to the diameter of the wafer.
6. The micro-vibration method of claim 5, wherein: the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer to spray the wafer.
7. A micro-vibration method for high aspect ratio patterned wafers as claimed in any of claims 1-3 wherein: the drying method further comprises the steps that a quick exhaust pipeline is arranged at the first outlet, the other end of the quick exhaust pipeline is connected with an air extraction device, air extraction is carried out through the air extraction device to form an outward traction pressure, and therefore hot nitrogen in the drying chamber flows along the air flowing path in an accelerated mode and is exhausted to the designated exhaust area through the quick exhaust pipeline.
8. A micro-vibration method for high aspect ratio patterned wafers as claimed in any of claims 1-3 wherein: the drying method further comprises intermittently opening and closing the third outlet during the introduction of the hot nitrogen gas to enhance and optimize the flow paths of the nitrogen gas stream and the isopropanol liquid stream without changing the shape configuration of various components in the tank body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010125636.4A CN111312580B (en) | 2020-02-27 | 2020-02-27 | Micro-amplitude vibration method for high aspect ratio graphic wafer |
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| CN113063272A (en) * | 2021-04-14 | 2021-07-02 | 创微微电子(常州)有限公司 | Wafer drying groove, wafer drying method and wafer drying device |
| CN115274492A (en) * | 2022-06-22 | 2022-11-01 | 江苏亚电科技有限公司 | Swing type wafer drying equipment and wafer drying method |
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