CN108831849A - Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect - Google Patents
Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect Download PDFInfo
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- CN108831849A CN108831849A CN201810659303.2A CN201810659303A CN108831849A CN 108831849 A CN108831849 A CN 108831849A CN 201810659303 A CN201810659303 A CN 201810659303A CN 108831849 A CN108831849 A CN 108831849A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Abstract
The invention discloses a kind of wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect, wherein wafer drying device includes：Sink, for accommodating deionized water；Wafer pulling apparatus, for lifting wafer from deionized water；Source nitrogen；Nitrogen jet system, when for lifting wafer, hot nitrogen is sprayed to the meniscus region of wafer and deionized water, to generate the hot kalimeris brother Buddhist nun flowing downward along meniscus in meniscus region inducing temperature gradient, it realizes volume water suction film stripping, and then realizes that wafer ultra-clean is dry；Controller, for controlling wafer pulling apparatus, source nitrogen and nitrogen jet system.By the present invention in that replacing flammable, explosive and toxic organic steam to carry out with environmentally protective hot nitrogen, Marangoni is dry, and without being equipped with protective device, simplified feed system improves safety；Wafer pulling apparatus is fixed from two positions and substep lifts wafer, avoids fixture wafer contacts area that from can not drying, and realizes that wafer is completely dried.
Description
Technical field
The present invention relates to wafer-process technical field, in particular to a kind of drying wafer dress based on hot kalimeris brother Buddhist nun effect
It sets and drying means.
Background technique
Drying wafer mode mainly includes that rotary drying and Marangoni (kalimeris brother Buddhist nun) are dry in the related technology.
It is that the water layer that the centrifugal force generated using wafer rotation adsorbs crystal column surface is removed for rotary drying.But
After rotation, crystal column surface still remains thicker water membrane, and thickness is at least 200nm.The residual moisture film can generate very
More seasoning defect drying defects.
It is dry for Marangoni, during being lifted wafer from deionized water, in gas-liquid interface bent moon
Low surface tension substance is sprayed at face or IPA vapor induction generates Marangoni effect, realizes crystal column surface volume absorbing membrane
It completely strips and dries.Marangoni drying is a kind of than rotarily drying more advanced dry technology, but due to using at present
IPA vapor there is flammable and toxicity, cause industrially to need using a large amount of safeguard measure, it is ensured that drying system safety
Reliably working, so the air supply system of organic steam and drying wafer unit are sufficiently complex.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.
For this purpose, the first purpose of this invention is to propose a kind of wafer drying device based on hot kalimeris brother Buddhist nun effect,
Steam feed system is simplified, the safety of drying device is improved.
Second object of the present invention is to propose a kind of drying wafer method based on hot kalimeris brother Buddhist nun effect.
In order to achieve the above objectives, it is dry to propose a kind of wafer based on hot kalimeris brother Buddhist nun effect for one aspect of the present invention embodiment
Dry device, including：Sink, for accommodating deionized water；Wafer pulling apparatus, for lifting wafer from the deionized water；
Source nitrogen, for providing the nitrogen of the first temperature；Nitrogen jet system is connected with the source nitrogen, for the wafer from
When being promoted in the deionized water, the nitrogen of first temperature is sprayed the meniscus region of the wafer and the deionized water
Gas, to generate the hot Marangoni flowing downward along the meniscus in the meniscus region inducing temperature gradient, in turn
The wafer is dried；And controller, for controlling the wafer pulling apparatus, the source nitrogen and the nitrogen
Gas jet system.
In addition, the wafer drying device according to the above embodiment of the present invention based on hot kalimeris brother Buddhist nun effect can also have
Additional technical characteristic below：
Optionally, the wafer pulling apparatus includes：Driving mechanism；First shift mechanism is connected with the driving mechanism,
Downside for selectively fixing the wafer and the promotion wafer on the downside of the wafer；Second shift mechanism, with institute
It states driving mechanism to be connected, for selectively fixing the predeterminated position of the wafer and lifting the wafer；Wherein, described default
Position is higher than the position of the fixed wafer of first shift mechanism, and the controller is connected with the driving mechanism, with control
It makes the downside of the fixed wafer of first stretching structure and promotes the wafer to part wafer and expose the deionized water
The water surface；The controller is also used to after the part wafer exposes the water surface of the deionized water, and control described second mentions
The upside of the fixed wafer of drawing mechanism simultaneously disengages first shift mechanism and the wafer, then controls described second and mentions
The wafer is all lifted out the water surface of the deionized water by drawing mechanism；Wherein, the controller is also used in the wafer
When lifting process by the process of first stretching structure promotion and by second stretching structure, the nitrogen jet system is controlled
It unites and sprays the meniscus region of the wafer and the deionized water nitrogen of first temperature, in the meniscus area
Domain inducing temperature gradient and generate the hot Marangoni flowing downward along the meniscus, and then the wafer is dried
Processing.
Optionally, the nitrogen jet system includes：First injection unit, for the first surface from the wafer to institute
The meniscus region for stating wafer and the deionized water sprays the nitrogen of first temperature；Second injection unit is used for from institute
The second surface for stating wafer sprays the meniscus region of the wafer and the deionized water nitrogen of first temperature；Its
In, the first surface and the second surface are respectively two opposite faces of the wafer.
Optionally, first injection unit and second injection unit include：Spray boom；It is horizontally spaced about in institute
State multiple fumaroles on spray boom；Wherein, one layer is formed when the multiple fumarole sprays the nitrogen of first temperature simultaneously
Air curtain, to spray the meniscus region by the air curtain.
Optionally, first injection unit and second injection unit include：Spray boom；It is arranged on the spray boom
Rectangle puff prot；Wherein, one layer of air curtain is formed when the rectangle puff prot sprays the nitrogen of first temperature, to pass through
It states air curtain and sprays the meniscus region.
Optionally, it is set on the pipeline between first injection unit, second injection unit and the source nitrogen
It is equipped with：Valve, for controlling the on-off of the nitrogen；Flowmeter, for controlling the flow of the nitrogen；Heating device is used for
The nitrogen is heated to first temperature.
Optionally, first temperature is less than 60 degree.
The wafer drying device based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention, by using environmentally protective hot nitrogen
Gas replaces flammable, explosive and toxic organic steam to carry out Marangoni drying, without being equipped with protective device to drying device,
Steam feed system is simplified, the safety of drying device is improved；Wafer pulling apparatus lifts wafer in two steps：The first step from
The top half of wafer is simultaneously lifted out the water surface by the fixed wafer in downside, is carried out when lifting wafer to the part that wafer exposes the surface
It is dry；Second step is completely dried the fixed wafer in region from the top half of wafer and makes to fix wafer with the first step on the downside of wafer
The shift mechanism of downside disengages, and wafer is all then lifted out the water surface, and the portion to expose the surface when lifting wafer to wafer
Divide and is dried.Since when second step lifts wafer, the position of the fixed wafer in upside is dried in the first step, and brilliant
Round lower half portion is disengaged with shift mechanism, can be done to the lower half portion of wafer when second step lifts wafer
It is dry.The wafer drying device based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention lifts in two steps and dry wafer, Ke Yibao
Card wafer overall surface is dried, and drying effect is promoted.
In order to achieve the above objectives, another aspect of the present invention embodiment proposes a kind of wafer based on hot kalimeris brother Buddhist nun effect
Drying means includes the following steps：Wafer is placed in deionized water；The wafer is lifted so that the wafer from
To moving except the deionized water in the deionized water, and during lifting the wafer to the wafer with it is described
The meniscus region of deionized water sprays the nitrogen of first temperature, to produce in the meniscus region inducing temperature gradient
The raw hot Marangoni flowing downward along the meniscus, and then the wafer is dried.
In addition, the drying wafer method according to the above embodiment of the present invention based on hot kalimeris brother Buddhist nun effect can also have
Additional technical characteristic below：
Optionally, step S2 is specifically included：Using the first shift mechanism from the fixed wafer in the downside of the wafer, and
The water surface that the wafer exposes to part wafer the deionized water is promoted from downside；The part wafer expose described in go from
After the water surface of sub- water, control first shift mechanism and stop promoting the wafer, and control the second shift mechanism it is fixed described in
The predeterminated position of wafer；It controls first shift mechanism and the wafer disengages；Controlling second shift mechanism will be described
Wafer all lifts out the water surface of the deionized water；Wherein, the predeterminated position is higher than the fixed institute of first shift mechanism
The position for stating wafer was lifted in the wafer by the process that first stretching structure is promoted and by second stretching structure
Cheng Zhong sprays the meniscus region of the wafer and the deionized water nitrogen of first temperature, in the curved liquid
Face region inducing temperature gradient and generate the hot Marangoni flowing downward along the meniscus, and then the wafer is carried out
It is dried.
Optionally, first temperature is less than 60 degree.
The drying wafer method based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention, by using environmentally protective hot nitrogen
Gas replaces flammable, explosive and toxic organic steam to carry out Marangoni drying, without being equipped with protective device to drying device,
Steam feed system is simplified, the safety of drying device is improved；Wafer is lifted in two steps：The first step fixes wafer from downside
And the top half of wafer is lifted into out the water surface, the part that wafer exposes the surface is dried when lifting wafer；Second step
The fixed wafer in region is completely dried from the top half of wafer and makes to fix the pulling machine on the downside of wafer with the first step on the downside of wafer
Structure disengages, and wafer is all then lifted out the water surface, and the part that wafer exposes the surface is dried when lifting wafer.By
In when second step lifts wafer, the position of the fixed wafer in upside is dried in the first step, and the lower half portion of wafer
It disengages with shift mechanism, the lower half portion of wafer can be dried when second step lifts wafer.The present invention is implemented
The drying wafer method based on hot kalimeris brother Buddhist nun effect of example lifts in two steps and dry wafer, it is ensured that wafer overall surface
It is dried, promotes drying effect.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect and advantage of the invention will become from the following description of the accompanying drawings of embodiments
Obviously and it is readily appreciated that, wherein：
Fig. 1 is the structural schematic diagram of the wafer drying device based on hot kalimeris brother Buddhist nun effect of one embodiment of the invention；
Fig. 2 is the side view of Fig. 1；
Fig. 3 is the top view of Fig. 1；
Fig. 4 is the drying principles figure of the wafer drying device based on hot kalimeris brother Buddhist nun effect of one embodiment of the invention；
Fig. 5 is the partial structural diagram of the spray boom in one embodiment of the invention with multiple fumaroles；
Fig. 6 is the partial structural diagram of the spray boom in another embodiment of the present invention with rectangle fumarole；
Fig. 7 is the flow chart of the drying wafer method based on hot kalimeris brother Buddhist nun effect of one embodiment of the invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Fig. 1 is the structural schematic diagram of the wafer drying device of one embodiment of the invention, and Fig. 2 is the side view of Fig. 1, Fig. 3
For the top view of Fig. 1.As shown in Figure 1-3, a kind of wafer drying device, including：Sink 100, wafer pulling apparatus 200, nitrogen
Source (not shown), nitrogen jet system and controller (not shown).Wherein, sink 100 is for accommodating deionized water.
Wafer pulling apparatus 200 is used to lift wafer 400 from deionized water.Source nitrogen is for providing the nitrogen of the first temperature, and first
Temperature is greater than the temperature of deionized water.Nitrogen jet system is connected with source nitrogen, for being elevated from deionized water in crystalline substance 400
When, the nitrogen of the first temperature is sprayed the meniscus region of wafer 400 and deionized water, in meniscus region inducing temperature ladder
Degree induces surface tension gradient and generates the hot Marangoni flowing downward along meniscus, realizes the reflux and stripping of volume absorbing membrane
From, and then wafer 400 is dried.Controller is for controlling wafer pulling apparatus 200, source nitrogen and nitrogen jet system
System.The wafer drying device based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention, is taken by using environmentally protective hot nitrogen
Marangoni drying is carried out for flammable, explosive and toxic organic steam, without being equipped with protective device to drying device, is simplified
Steam feed system, improves the safety of drying device.In addition, the embodiment of the present invention based on hot kalimeris brother Buddhist nun effect
Wafer drying device has significant drying effect to the lower substrate of the thermal conductivities such as Sapphire Substrate, gallium nitride substrate.
In one embodiment of the invention, wafer pulling apparatus 200 is mentioned including driving mechanism (not shown), first
Drawing device 210 and the second pulling apparatus.
Wherein, driving mechanism can be servo motor, by the control of controller, to be driven according to the control instruction of controller
First shift mechanism 210 and the second shift mechanism.
First shift mechanism 210 is connected with driving mechanism, for selectively fixing the downside of wafer 400 and from wafer
400 downsides promote wafer 400.In one embodiment of the invention, the first shift mechanism 210 includes a receiving wafer 400
The groove 211 of downside and the first connector 212 being connected between groove 211 and driving mechanism.
Second shift mechanism is connected with driving mechanism, for selectively fixing the predeterminated position of wafer 400 and lifting crystalline substance
Circle 400.Wherein, predeterminated position is higher than the position of the fixed wafer 400 of the first shift mechanism 210, in one embodiment of the present of invention
In, the second shift mechanism includes left aid hand 221, right aid hand 222, and leans on left aid hand 221 and right aid palmistry mutually
The second connector that is close or being located remotely from each other.
When wafer 400 is placed in deionized water, the downside of wafer 400 is placed in groove 211.The first step, by driving machine
Structure drives groove 211 to move up (i.e. to the direction movement except deionized water) by the first connector 212.When wafer 400
Part when starting to expose the water surface of deionized water, source nitrogen starts to provide the nitrogen of the first temperature, and nitrogen jet system starts
The nitrogen for spraying the meniscus region of wafer 400 and deionized water the first temperature carries out the part that wafer 400 exposes the surface
It is dry.
Fig. 4 is the drying principles figure of the wafer drying device of one embodiment of the invention.As shown in figure 4, hot nitrogen is curved
Meniscus region inducing temperature gradient induces surface tension gradient and generates the hot Marangoni flowing downward along meniscus, realizes
The reflux and removing of absorbing membrane are rolled up, to realize the drying to 400 part of wafer for exposing deionized water to progress.
Second step exposes water after part wafer 400 exposes the water surface of deionized water, such as more than the wafer 400 of half
Behind face, controller, which controls the first shift mechanism 210, to be stopped promoting wafer 400, controls left aid hand 221 and right 222 phase of aid hand
Mutually close to fix the region that wafer 400 had been dried.Then controller control the first shift mechanism 210 move downward with
Wafer 400 disengages.Then controller controls the second shift mechanism and lifts wafer 400 to the water surface for being lifted out deionized water completely,
Dry whole positions of wafer 400.
The wafer drying device based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention lifts in two steps and dry wafer, can
To guarantee that wafer overall surface is dried, drying effect is promoted.
In one embodiment of the invention, nitrogen jet system includes the first injection unit and the second injection unit.Its
In, source nitrogen is connected by pipeline 310 with the first injection unit and the second injection unit.First injection unit includes the first spray boom
320, the first spray boom 320 can spray hot nitrogen to the meniscus region of wafer 400 and deionized water from the first surface of wafer 400
Gas.Second injection unit includes the second spray boom 330, the second spray boom 330 be used for from the second surface of wafer 400 to wafer 400 with
The meniscus region of deionized water sprays the nitrogen of the first temperature.Wherein, first surface and second surface are respectively wafer 400
Two opposite faces can simultaneously be dried two opposite faces of wafer 400 by the first spray boom 320 and the second spray boom 330.
Fig. 5 is the partial structural diagram of the spray boom in one embodiment of the invention with multiple fumaroles.Such as Fig. 5 institute
Show, is horizontally spaced about multiple fumaroles on the first spray boom 320 and the second spray boom 330, wherein multiple fumaroles can use
Diameter d is the circular hole of 1mm.Multiple fumaroles form one layer of air curtain when spraying hot nitrogen simultaneously, to spray meniscus by air curtain
Wafer 400 is dried in region.
Fig. 6 is the partial structural diagram of the spray boom in another embodiment of the present invention with rectangle puff prot.Such as Fig. 6 institute
Show, be provided with rectangle fumarole on the first spray boom 320 and the second spray boom 330, wherein the width h of rectangle fumarole can be with
For 1mm, length and the diameter of wafer 400 match.Rectangle fumarole forms one layer of air curtain when spraying hot nitrogen, to pass through air curtain
Wafer 400 is dried in injection meniscus region.
In one embodiment of the invention, the pipeline between the first injection unit, the second injection unit and source nitrogen
On be provided with valve, flowmeter and heating device.Wherein, valve is used to control the on-off of nitrogen.Flowmeter is for controlling nitrogen
Flow.Heating device is used to nitrogen being heated to the first temperature, provides the hot nitrogen of constant temperature.
In one embodiment of the invention, the first temperature avoids the excessively thermally-induced a large amount of evaporations of wafer 400 less than 60 degree,
Generate seasoning defect drying defect.
The wafer drying device of the embodiment of the present invention is crossed flammable, explosive and toxic using environmentally protective hot nitrogen substitution
Organic steam to carry out Marangoni dry, without being equipped with protective device to drying device, simplify steam feed system, mention
The safety of drying device is risen.
Fig. 7 is the flow chart of the drying wafer method of one embodiment of the invention.As shown in fig. 7, the invention also discloses
A kind of drying wafer method, the drying wafer method include the following steps：
S1：Wafer is placed in deionized water.
S2：Wafer is lifted, so that wafer is moved from deionized water to except the water surface of sub- water, and is being lifted
The nitrogen of first temperature is sprayed the meniscus region of wafer and deionized water during wafer, to induce in meniscus region
Temperature gradient and generate the hot Marangoni flowing downward along meniscus, and then wafer is dried.
The drying wafer method based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention, by using environmentally protective hot nitrogen
Gas replaces flammable, explosive and toxic organic steam to carry out Marangoni drying, without being equipped with protective device to drying device,
Steam feed system is simplified, the safety of drying device is improved.In addition, the embodiment of the present invention is imitated based on hot kalimeris brother Buddhist nun
The drying wafer method answered has significant drying effect to the lower substrate of the thermal conductivities such as Sapphire Substrate.
In one embodiment of the invention, step S2 is specifically included：
S2-1：Using the first shift mechanism from the fixed wafer in the downside of wafer, wafer to part wafer is promoted from downside and is revealed
The water surface of deionized water out.
S2-2：After the water surface that part wafer exposes deionized water, the first shift mechanism of control stops promoting wafer, and controls
Make the predeterminated position of the fixed wafer of the second shift mechanism；
S2-3：It controls the first shift mechanism and wafer disengages；
S2-4：Control the water surface that wafer is all lifted out deionized water by the second shift mechanism.
Wherein, the process that wafer is promoted by the first stretching structure and by the second stretching structure lift process when, control nitrogen
Gas jet system sprays the meniscus region of wafer and deionized water the nitrogen of the first temperature, to induce temperature in meniscus region
It spends gradient and generates the hot Marangoni flowing downward along meniscus, and then wafer is dried.
The drying wafer method based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention lifts wafer in two steps：The first step from
The top half of wafer is simultaneously lifted out the water surface by the fixed wafer in downside, is carried out when lifting wafer to the part that wafer exposes the surface
It is dry；Second step is from the fixed wafer of the top half of wafer and makes to fix the shift mechanism on the downside of wafer with the first step on the downside of wafer
It disengages, wafer is all then lifted into out the water surface, and the part that wafer exposes the surface is dried when lifting wafer.Due to
When second step lifts wafer, the position of the fixed wafer in upside is dried in the first step, and the lower half portion of wafer is
Through being disengaged with shift mechanism, second step lift wafer when the lower half portion of wafer can be dried, avoid wafer with
The problem of fixture claw contact area can not be completely dried.The drying wafer based on hot kalimeris brother Buddhist nun effect of the embodiment of the present invention
Method lifts in two steps and dry wafer, it is ensured that wafer overall surface is dried, and drying effect is promoted.
In one embodiment of the invention, the first temperature is less than 60 degree.
It should be noted that the drying wafer dress of above-described embodiment can be used in the drying wafer method of the embodiment of the present invention
Carry out drying wafer is set, referring specifically to the specific embodiment of the wafer drying device of above-described embodiment, in order to reduce redundancy, no
It repeats.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of wafer drying device based on hot kalimeris brother Buddhist nun effect, which is characterized in that including：
Sink, for accommodating deionized water；
Wafer pulling apparatus, for lifting wafer from the deionized water；
Source nitrogen, for providing the nitrogen of the first temperature；
Nitrogen jet system is connected with the source nitrogen, for when the wafer is promoted from the deionized water, to described
The meniscus region of wafer and the deionized water sprays the nitrogen of first temperature, to induce temperature in the meniscus region
It spends gradient and generates the hot Marangoni flowing downward along the meniscus, and then the wafer is dried；And
Controller, for controlling the wafer pulling apparatus, the source nitrogen and the nitrogen jet system.
2. the wafer drying device according to claim 1 based on hot kalimeris brother Buddhist nun effect, which is characterized in that the wafer
Pulling apparatus includes：
Driving mechanism；
First shift mechanism is connected with the driving mechanism, for selectively fixing the downside of the wafer and from the crystalline substance
Circle downside promotes the wafer；
Second shift mechanism is connected with the driving mechanism, for selectively fixing predeterminated position and the lifting of the wafer
The wafer；
Wherein, the predeterminated position is higher than the position of the fixed wafer of first shift mechanism, the controller with it is described
Driving mechanism is connected, to control the downside of the fixed wafer of first stretching structure and promote the wafer to part wafer
Expose the water surface of the deionized water；
The controller is also used to after the part wafer exposes the water surface of the deionized water, controls second pulling machine
The upside of the fixed wafer of structure simultaneously disengages first shift mechanism and the wafer, then controls second pulling machine
The wafer is all lifted out the water surface of the deionized water by structure；
Wherein, the controller is also used to mention in the wafer by the process that first stretching structure is promoted and by described second
When pull-up structure lifts process, controls the nitrogen jet system and the meniscus region of the wafer and the deionized water is sprayed
The nitrogen of first temperature, to generate the heat downward along the meniscus in the meniscus region inducing temperature gradient
Marangoni flowing, and then the wafer is dried.
3. the wafer drying device according to claim 1 or 2 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described
Nitrogen jet system includes：
First injection unit, for the first surface from the wafer to the meniscus region of the wafer and the deionized water
Spray the nitrogen of first temperature；
Second injection unit, for the second surface from the wafer to the meniscus region of the wafer and the deionized water
Spray the nitrogen of first temperature；
Wherein, the first surface and the second surface are respectively two opposite faces of the wafer.
4. the wafer drying device according to claim 3 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described first
Injection unit and second injection unit include：
Spray boom；
It is horizontally spaced about multiple fumaroles on the spray boom；
Wherein, one layer of air curtain is formed when the multiple fumarole sprays the nitrogen of first temperature simultaneously, to pass through the wind
Curtain sprays the meniscus region.
5. the wafer drying device according to claim 3 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described first
Injection unit and second injection unit include：
Spray boom；
Rectangle puff prot on the spray boom is set；
Wherein, one layer of air curtain is formed when the rectangle fumarole sprays the nitrogen of first temperature, to spray by the air curtain
Penetrate the meniscus region.
6. the wafer drying device according to claim 3 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described
It is provided on pipeline between one injection unit, second injection unit and the source nitrogen：
Valve, for controlling the on-off of the nitrogen；
Flowmeter, for controlling the flow of the nitrogen；
Heating device, for the nitrogen to be heated to first temperature.
7. the wafer drying device according to claim 1 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described first
Temperature is less than 60 degree.
8. a kind of drying wafer method based on hot kalimeris brother Buddhist nun effect, which is characterized in that include the following steps：
S1：Wafer is placed in deionized water；
S2：The wafer is lifted, so that the wafer is moved from the deionized water to except the deionized water,
And first temperature is sprayed to the meniscus region of the wafer and the deionized water during lifting the wafer
Nitrogen, to generate the hot Marangoni flowing downward along the meniscus in the meniscus region inducing temperature gradient,
And then the wafer is dried.
9. the drying wafer method according to claim 8 based on hot kalimeris brother Buddhist nun effect, which is characterized in that step S2 tool
Body includes：
Using the first shift mechanism from the fixed wafer in the downside of the wafer, and the wafer is promoted to part crystalline substance from downside
Circle exposes the water surface of the deionized water；
After the part wafer exposes the water surface of the deionized water, controls first shift mechanism and stop promoting the crystalline substance
Circle, and control the predeterminated position of the fixed wafer of the second shift mechanism；
It controls first shift mechanism and the wafer disengages；
Control the water surface that the wafer is all lifted out the deionized water by second shift mechanism；
Wherein, the predeterminated position is higher than the position of the fixed wafer of first shift mechanism, described in the wafer
First stretching structure promoted process and by second stretching structure lifting during, to the wafer and the deionized water
Meniscus region spray the nitrogen of first temperature, to generate in the meniscus region inducing temperature gradient along described
The downward hot Marangoni flowing of meniscus, and then the wafer is dried.
10. the drying wafer method according to claim 6 based on hot kalimeris brother Buddhist nun effect, which is characterized in that described
One temperature is less than 60 degree.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810659303.2A CN108831849A (en) | 2018-06-25 | 2018-06-25 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
| CN201920897473.4U CN210325700U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system based on marangoni effect |
| CN201910517168.2A CN110265327A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method based on marangoni effect |
| CN201920898244.4U CN210325702U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system |
| CN201910517084.9A CN110391157A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method |
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| CN201920897473.4U Active CN210325700U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system based on marangoni effect |
| CN201910517084.9A Pending CN110391157A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method |
| CN201920898244.4U Active CN210325702U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system |
| CN201910517168.2A Pending CN110265327A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method based on marangoni effect |
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| CN201920898244.4U Active CN210325702U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system |
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| CN210325700U (en) | 2020-04-14 |
| CN110265327A (en) | 2019-09-20 |
| CN110391157A (en) | 2019-10-29 |
| CN210325702U (en) | 2020-04-14 |
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