CN210325700U - Wafer post-processing system based on marangoni effect - Google Patents
Wafer post-processing system based on marangoni effect Download PDFInfo
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- CN210325700U CN210325700U CN201920897473.4U CN201920897473U CN210325700U CN 210325700 U CN210325700 U CN 210325700U CN 201920897473 U CN201920897473 U CN 201920897473U CN 210325700 U CN210325700 U CN 210325700U
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- 230000000694 effects Effects 0.000 title claims abstract description 19
- 238000012805 post-processing Methods 0.000 title claims description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 76
- 238000002347 injection Methods 0.000 claims abstract description 65
- 239000007924 injection Substances 0.000 claims abstract description 65
- 239000007788 liquid Substances 0.000 claims abstract description 65
- 238000001035 drying Methods 0.000 claims abstract description 30
- 230000005499 meniscus Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims description 75
- 239000000243 solution Substances 0.000 claims description 25
- 239000007921 spray Substances 0.000 claims description 25
- 238000005507 spraying Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 abstract description 8
- 238000005498 polishing Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
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- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model relates to a chemical mechanical polishing aftertreatment technical field discloses a wafer aftertreatment system based on marangoni effect, include: the wafer lifting device is used for lifting the wafer immersed in the cleaning liquid from the cleaning liquid; and the gas injection device is used for injecting the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the surface of the wafer in the process of lifting the wafer from the cleaning liquid so as to strip the attachments on the surface of the wafer from the surface of the wafer in the direction opposite to the lifting direction.
Description
Technical Field
The utility model relates to a chemical mechanical polishing aftertreatment technical field especially relates to a wafer aftertreatment system based on marangoni effect.
Background
Chemical Mechanical Polishing (CMP) is an ultra-precise surface processing technique for obtaining global Planarization in Integrated Circuit (IC) manufacturing. With the development of integrated circuit manufacturing technology, the control of the defects on the surface of the wafer is more and more strict. During the wafer manufacturing process, the surface of the wafer may absorb contaminants such as particles or organic substances to generate a large number of defects, which require a post-treatment process to remove.
Particularly, since chemicals and abrasives used in a large amount in chemical mechanical polishing cause contamination of a wafer surface, a post-treatment process is introduced after polishing to remove the contamination of the wafer surface, and the post-treatment process generally consists of cleaning and drying to provide a smooth and clean wafer surface.
The purpose of post-polishing cleaning is to remove particles and various chemicals from the surface of the wafer and to avoid corrosion and damage to the surface and internal structures during the cleaning process, and currently, the common wet cleaning is to clean the wafer in a solution environment, such as soaking with a cleaning agent, mechanical scrubbing, wet chemical cleaning, and the like.
After the wafer is cleaned, a lot of water or residues of the cleaning solution remain on the surface of the wafer. Since impurities are dissolved in the water or the residues of the cleaning solution, if the residual liquid is allowed to evaporate and dry, the impurities will adhere to the surface of the wafer again, causing contamination and even destroying the structure of the wafer. For this reason, the wafer surface needs to be dried to remove these residual liquids. In the traditional rotary drying mode, the thickness of the residual water film after drying is very large, even possibly higher than 200nm, so that water mark defects are easily caused.
In conclusion, the prior art has the problems of poor wafer drying effect and easy residual liquid.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a wafer aftertreatment system based on marangoni effect aims at solving one of the technical problem that exists among the prior art at least.
The embodiment of the utility model provides a wafer aftertreatment system based on marangoni effect, include:
the wafer lifting device is used for lifting the wafer immersed in the cleaning liquid from the cleaning liquid;
and the gas injection device is used for injecting the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the surface of the wafer in the process of lifting the wafer from the cleaning liquid so as to strip the attachments on the surface of the wafer from the surface of the wafer in the direction opposite to the lifting direction.
In one embodiment, a gas injection apparatus includes:
the first spraying mechanism is used for spraying the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the first surface of the wafer;
the second spraying mechanism is used for spraying the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the second surface of the wafer;
the first surface and the second surface are two opposite surfaces of the wafer respectively.
In one embodiment, the first injection mechanism and the second injection mechanism comprise a gas injection assembly, a rotary driving module and a control module which are connected in sequence;
the control module controls the gas injection assembly to rotate through the rotation driving module so as to aim the dry gas injected by the gas injection assembly at the meniscus region.
In one embodiment, the gas injection assembly comprises a spray bar, wherein a plurality of gas injection holes are arranged on the spray bar at intervals, and a layer of air curtain is formed when the plurality of gas injection holes simultaneously inject the drying gas with the first temperature so as to inject the meniscus region through the air curtain.
In one embodiment, the gas injection assembly includes a spray bar with a long slit provided thereon.
In one embodiment, the rotary drive module includes a rotary motor and a motor driver.
In one embodiment, the first temperature is higher than the temperature of the cleaning liquid and lower than 60 ℃.
In one embodiment, the wafer post-processing system further comprises a gas supply source for providing the dry gas at the first temperature, and the gas supply source is connected with the gas injection device through a pipeline.
In one embodiment, the pipeline is provided with a control valve for controlling the on-off of the pipeline and a flow meter for controlling the flow of the drying gas.
In one embodiment, the wafer post-processing system further comprises a cleaning tank for containing the cleaning solution.
The application discloses wafer aftertreatment system, its beneficial effect includes: based on the marangoni effect, the cleaning solution with the attachments on the surface of the wafer is stripped downwards, so that the wafer is cleaned and dried, the liquid residue is reduced, and the wafer drying effect is improved.
Drawings
The advantages of the invention will become clearer and more easily understood from the detailed description given with reference to the following drawings, which are given purely by way of illustration and do not limit the scope of protection of the invention, wherein:
fig. 1 is a schematic diagram illustrating a wafer post-processing according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a wafer post-processing system according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a gas injection device according to an embodiment of the present invention;
fig. 4a and 4b are schematic structural diagrams of an injection mechanism according to an embodiment of the present invention;
fig. 5a and 5b are schematic structural views of an injection mechanism according to another embodiment of the present invention;
fig. 6 is a front view of a wafer post-processing system according to an embodiment of the present invention;
fig. 7 is a right side view of a wafer post-processing system in accordance with an embodiment of the present invention;
fig. 8a is a schematic view of a first moving mechanism according to an embodiment of the present invention;
fig. 8b is a schematic view of a first moving mechanism according to another embodiment of the present invention;
fig. 9 is a right side view of a wafer post-processing system in accordance with another embodiment of the present invention;
description of reference numerals:
w, a wafer;
10. a wafer lifting device; 11. a first moving mechanism; 111. a groove; 112. a first connecting member; 113. a first slider; 114. a first guide rail; 115. a first servo electric cylinder; 12. a second moving mechanism; 121. a first clamping member; 122. a second clamping member; 123. a second driving member; 124. a vertical moving mechanism; 125. a horizontal movement mechanism;
20. a gas injection device; 21. a first injection mechanism; 22. a second injection mechanism; 23. a gas injection assembly; 231. a spray rod; 232. a gas injection hole; 233. an elongated slit; 24. a rotation driving module; 25. a control module;
30. and (4) cleaning the tank.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are provided to illustrate the concepts of the present invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It is to be understood that, unless otherwise specified, the following descriptions of specific embodiments of the present invention are made for ease of understanding in a natural state where the relevant devices, apparatuses, components, etc. are originally at rest and are not given external control signals and driving forces.
As shown in fig. 1, the implementation principle of the wafer post-processing based on the marangoni effect is as follows:
in fig. 1, the liquid rises along the surface of the wafer w due to the wetting action of the liquid, and the contact liquid level at the intersection of the gas (dry gas), the liquid (cleaning liquid) and the solid (wafer) presents a concave meniscus, i.e., a meniscus, under the action of the surface tension of the liquid.
As shown in fig. 1, while the wafer w is pulled out from the cleaning solution at a constant speed V, hot dry gas is sprayed to the meniscus region of the cleaning solution attached to the surface of the wafer w, so that the temperature of the liquid in the region is increased to form a temperature gradient, the temperature gradient induces a surface tension gradient to make the cleaning solution flow downward along the meniscus, and the strong interface flow generated by the marangoni effect can not only strip the liquid attached to the surface of the wafer w along with the pulling of the wafer w, but also wash away the contaminants attached to the surface of the wafer w, thereby simultaneously cleaning and drying the wafer w.
As shown in fig. 1, an embodiment of the present invention provides a wafer post-processing system based on marangoni effect, including:
a wafer lifting device 10 for lifting the wafer w immersed in the cleaning liquid from the cleaning liquid;
and the gas injection device 20 is used for injecting the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the surface of the wafer w in the process of lifting the wafer w from the cleaning liquid so as to strip the attachments on the surface of the wafer w from the surface of the wafer w in the direction opposite to the lifting direction.
In one embodiment, the gas injection device 20 is rotatable about an axis of rotation such that the injected gas follows the meniscus. The gas ejection position of the gas ejection device 20 is rotated around the rotation axis within a range of 10 ° to 50 ° from the horizontal plane.
In this embodiment, the gas sprayed by the gas spraying device 20 may be nitrogen, and the temperature of the gas, i.e. the first temperature, is higher than the temperature of the cleaning solution and lower than 60 ℃.
The temperature of the nitrogen is higher than that of the cleaning liquid, so that the temperature distribution of the meniscus region changes, and marangoni convection occurs when the surface tension of the interface depends on the temperature distribution, that is, when the hot dry gas is used to spray the interface of the liquid and the solid in the embodiment, the cleaning liquid takes the attachments on the surface of the wafer to peel off downwards based on the thermal marangoni effect, so that the cleaning and drying of the wafer w are realized, the liquid residue is reduced, and the wafer drying effect is improved.
The temperature of the nitrogen gas is lower than 60 ℃, so that the drying defect caused by evaporation of a large amount of liquid due to overheating of the wafer w can be avoided.
The utility model discloses wafer aftertreatment system replaces flammable, can explode and poisonous organic steam to carry out marangoni drying through the nitrogen gas that uses green, need not to be equipped with safety arrangement, has simplified gas supply system, has promoted wafer aftertreatment system's security. Furthermore, the utility model discloses wafer aftertreatment system based on marangoni effect has apparent drying effect to the lower substrates of thermal conductivity such as sapphire substrate, gallium nitride substrate.
As shown in fig. 2, the gas injection device 20 includes:
a first spraying mechanism 21 for spraying a dry gas of a first temperature to a meniscus region of the cleaning liquid adhering to the first surface of the wafer w;
a second spraying mechanism 22 for spraying the dry gas of the first temperature to the meniscus region of the cleaning liquid adhered to the second surface of the wafer w;
the first surface and the second surface are two opposite surfaces of the wafer w respectively.
The first and second jetting mechanisms 21, 22 are located on symmetrical sides of the wafer.
In this embodiment, the first spraying mechanism 21 and the second spraying mechanism 22 are simultaneously operated to simultaneously spray the dry gas of the first temperature to the meniscus regions of the cleaning solution adhering to the two opposite surfaces of the wafer w during the lifting of the wafer w from the cleaning solution, so that the adhering matter on the two surfaces of the wafer w is peeled off from the surface of the wafer w in the direction opposite to the lifting direction. The present embodiment achieves simultaneous drying of both opposing surfaces of the wafer w during the pulling of the wafer w by the first and second spraying mechanisms 21 and 22.
As shown in fig. 3, taking one side of the wafer w as an example, the first injection mechanism 21 and the second injection mechanism 22 each include a gas injection assembly 23, a rotation driving module 24, and a control module 25 connected in sequence;
the control module 25 controls the gas injection assembly 23 to rotate through the rotation driving module 24 to direct the dry gas injected by the gas injection assembly to the meniscus region.
As one possible implementation, the control module 25 controls the gas injection assembly 23 to rotate at a predetermined angular velocity so that the dry gas injected by the gas injection assembly 23 is directed at the meniscus region.
As another possible implementation manner, the control module 25 is further connected to the wafer lifting apparatus 10, and the control module 25 obtains the lifting speed of the wafer lifted by the wafer lifting apparatus 10 and calculates the corresponding rotation angular velocity of the gas injection assembly 23, so that the gas injection assembly 23 cooperates with the wafer lifting apparatus 10 to rotate the injection angle of the drying gas correspondingly as the wafer is lifted.
The rotation driving module 24 can drive the gas injection assembly 23 to rotate, so that the angle of the gas injected by the gas injection assembly 23 changes simultaneously with the change of the solid-liquid interface generated by the wafer w.
In one embodiment, the rotary drive module 24 includes a rotary motor and a motor driver. The rotating motor is fixedly connected with the gas injection assembly 23 to drive the gas injection assembly 23 to rotate, the motor driver is respectively connected with the rotating motor and the control module 25, and the control module 25 drives the rotating motor to run through the motor driver.
In an embodiment of the present invention, the wafer post-processing system further includes a gas supply source for providing the dry gas at the first temperature, and the gas supply source is connected to the gas injection device 20 through a pipeline.
In one embodiment, the pipeline is provided with a control valve for controlling the on-off of the pipeline and a flow meter for controlling the flow of the drying gas.
As shown in fig. 4a, in order to provide a schematic view of a gas injection assembly 23 according to an embodiment of the present invention, the gas injection assembly 23 includes a hollow spray bar 231, the spray bar 231 is connected to a gas supply source for supplying a dry gas through a pipeline, and the dry gas flows into the hollow portion of the spray bar 231 through a gas inlet of the spray bar 231. A plurality of gas injection holes 232 are provided at intervals in the spray bar 231 to communicate with the hollow portion, and the dry gas is injected outward through the gas injection holes 232. The plurality of gas injection holes 232 simultaneously inject the drying gas of the first temperature to form a layer of air curtain to inject the meniscus region through the air curtain to dry the wafer w.
Specifically, the diameter of spray bar 231 is 12mm, the bottom end of spray bar 231 is 5 to 15mm from the vertical distance of the liquid surface, and the end point closest to the wafer is 5 to 10mm from the horizontal distance of the wafer. The gas injection holes 232 are angled from the horizontal in the range of 10 to 50. The gas flow rate to spray bar 231 is 15 to 50L/min.
As shown in fig. 4b, which is a partial structure diagram of the spray bar 231 having a plurality of air injection holes 232 in fig. 4a, and as shown in fig. 4b after the partial structure E in fig. 4a is enlarged, a plurality of air injection holes 232 are horizontally arranged on the spray bar 231 at intervals, wherein the air injection holes 232 may be circular holes with a diameter d1 of 0.1 to 0.5mm, preferably 0.1 mm. The distance between two adjacent gas injection holes 232 is 2 to 5mm, preferably 3 mm.
As shown in fig. 5a, in order to provide a schematic view of a gas injection assembly 23 according to another embodiment of the present invention, the gas injection assembly 23 includes a hollow spray bar 231, the spray bar 231 is connected to a gas supply source for supplying a dry gas through a pipeline, and the dry gas flows into the hollow portion of the spray bar 231 through a gas inlet of the spray bar 231. The spray bar 231 is provided with an elongated slit 233 communicating with the hollow portion, and the dry gas is sprayed outward through the elongated slit 233. The elongated slots 233 form a curtain of air as the drying gas at the first temperature is ejected to eject the meniscus region through the curtain to dry the wafer w.
As shown in fig. 5b, which is a partial structure of the spray bar 231 having the elongated slit 233 in fig. 5a, and as shown in fig. 5b after enlargement of the partial structure I in fig. 5a, the elongated slit 233 extends in the horizontal direction, and has a length matching the diameter of the wafer w, and the width d2 may be 0.1 to 0.5mm, preferably 0.1 mm.
In one embodiment, spray bar 231 has a length greater than the diameter of the wafer.
As shown in fig. 6 and 7, an embodiment of the present invention provides a wafer post-processing system, further including:
a cleaning tank 30 for containing a cleaning liquid for cleaning the wafer w;
a wafer lifting device 10 for lifting the wafer w immersed in the cleaning liquid from the cleaning liquid;
the wafer lifting apparatus 10 includes:
the first moving mechanism 11 is used for fixing the lower side position of the wafer w in the cleaning liquid to lift;
and the second moving mechanism 12 is configured to, when the first moving mechanism 11 lifts the wafer w to the preset position, continuously lift the upper position, which is located above the liquid level of the cleaning liquid and is already cleaned and dried, of the fixed wafer w until the wafer w is separated from the cleaning liquid.
In this embodiment, after the second moving mechanism 12 is fixed to the wafer w, the first moving mechanism 11 releases the wafer w.
The surface of the second moving mechanism 12 is kept clean and dry, and the position where the second moving mechanism 12 is contacted with the wafer w is also the position where cleaning and drying are finished, so that secondary pollution of the contact position is avoided, and the problem that the contact area of the clamp and the wafer cannot be completely cleaned and dried is solved.
The surfaces of the parts of the first moving mechanism 11 and the second moving mechanism 12, which are in contact with the wafer, are provided with hydrophobic coatings.
The fixing portion of the first moving mechanism 11 for fixing the wafer w is disposed in the cleaning tank 30 and below the wafer w. After the wafer w is completely immersed in the cleaning solution and the cleaning is completed, the first moving mechanism 11 disposed in the cleaning tank 30 is moved upward from below the wafer w, so that the first moving mechanism 11 fixes the lower side position of the wafer w and lifts the wafer w from below the wafer w. The lower position is located in the cleaning solution, as shown in fig. 1, as an implementation mode, the lower position where the upper end of the first moving mechanism 11 contacts with the wafer is located below the center of the wafer, and the vertical distance from the center of the wafer is greater than one third of the radius of the wafer.
The first moving mechanism 11 drives the wafer w to move upwards, when the first moving mechanism 11 lifts the wafer w to a preset position, the first moving mechanism 11 stops moving, at this time, a part of the wafer w exposes out of the liquid level of the cleaning solution, the second moving mechanism 12 moves downwards from above the wafer w to fix the upper position of the wafer w above the liquid level of the cleaning solution, and after the second moving mechanism 12 stably fixes the wafer w, the second moving mechanism 12 drives the wafer w to continue moving upwards to continue lifting the wafer w until the wafer w is separated from the cleaning solution. As an alternative, as shown in fig. 1, the predetermined position is a position where the center of the wafer is away from the cleaning liquid level. The preset position is higher than the lower side position of the wafer w fixed by the first moving mechanism 11 and lower than the upper side position of the wafer w fixed by the second moving mechanism 12. Specifically, the first moving mechanism 11 lifts the wafer to a preset position, so that the distance between the top of the wafer and the liquid surface is 1.2 times to 1.5 times of the radius of the wafer. The upper side position of the second moving mechanism 12 contacting the wafer may be an end point of the horizontal diameter of the wafer, or an edge point of a certain distance below the end point, for example, 10mm below.
The embodiment of the utility model provides an in use two moving mechanism to promote wafer w respectively, first moving mechanism 11 contacts and promotes wafer w with wafer w below the washing liquid level, after wafer w exposes the liquid level, the fixed wafer w of second moving mechanism 12 has accomplished the position of wasing the drying and continues to promote wafer w and accomplish until wafer w and break away from the liquid level, whole process does not have unable washing or dry position, can guarantee that wafer w whole surface all is washd and dry, wafer w aftertreatment effect has been improved.
In one embodiment of the present invention, the wafer post-processing system further includes a controller for controlling the wafer lift apparatus 10, the gas injection apparatus 20 and the gas supply source to operate synchronously.
The controller is connected to the wafer lifting apparatus 10, and the controller controls the first moving mechanism 11 and the second moving mechanism 12 to perform the above-described operations. After the second moving mechanism 12 is fixed to the wafer w, the controller controls the first moving mechanism 11 to release the wafer w.
With reference to fig. 1 to 6, the working process of the wafer post-processing system provided by the present invention includes:
in the first step, the first moving mechanism 11 drives the wafer w to move upward (i.e. to move in a direction out of the cleaning solution), and when the wafer w begins to expose the liquid surface of the cleaning solution, the gas injection device 20 begins to inject hot dry gas to the meniscus region of the cleaning solution attached to the surface of the wafer w, so as to dry the portion of the wafer exposed from the liquid surface.
And secondly, when the first moving mechanism 11 lifts the wafer w to a preset position, for example, more than half of the wafer w is exposed out of the liquid level, the first moving mechanism 11 stops moving, at this time, the second moving mechanism 12 fixes the dried upper side position of the wafer and then continues to lift the wafer w until the wafer completely breaks away from the cleaning liquid, so that the whole cleaning and drying of the surface of the wafer w are realized.
As shown in fig. 6 and 7, the first moving mechanism 11 includes a recess 111 for receiving the lower side of the wafer w and a first driving member connected to the recess 111 for driving the recess 111 to move up and down. When the wafer w is placed in the cleaning liquid, the first moving mechanism 11 moves to place the lower side of the wafer w in the groove 111.
In one embodiment, the first moving mechanism 11 is provided with an in-situ detection module for detecting whether the wafer w is in place.
The in-place detection module can be a pressure sensor, the pressure sensor is arranged on the surface of the groove 111 contacting with the wafer w, and when the groove 111 supports the wafer w, the pressure sensor detects pressure change to judge that the wafer w is in place.
As shown in fig. 8a, as an alternative embodiment, a hollow hole 116 is formed in the groove 111 to penetrate through the top surface and the bottom surface, so as to prevent impurities from being deposited on the surface of the groove 111 contacting the wafer w.
As another possible embodiment, as shown in fig. 8b, the first moving mechanism 11 includes a first support 117 and a second support 118, and the first support 117 and the second support 118 may be two supports for supporting the lower portion of the wafer.
As shown in fig. 6, the second moving mechanism 12 includes a first clamping member 121, a second clamping member 122 and a second driving member 123, wherein the second driving member 123 is connected to the first clamping member 121 and the second clamping member 122 respectively to synchronously drive the first clamping member 121 and the second clamping member 122 to move toward or away from each other, and the first clamping member 121 and the second clamping member 122 are disposed opposite to each other for clamping the wafer w. Alternatively, the second driving member 123 may be implemented by a motor or a cylinder.
It can be understood that when the second driving member 123 drives the first clamping member 121 and the second clamping member 122 to move towards each other synchronously, the first clamping member 121 and the second clamping member 122 approach each other, and the bottom of the first clamping member 121 and the bottom of the second clamping member 122 can clamp the wafer w. When the second driving member 123 drives the first clamping member 121 and the second clamping member 122 to move back and forth synchronously, the first clamping member 121 and the second clamping member 122 are far away from each other, and the bottom of the first clamping member 121 and the bottom of the second clamping member 122 can release the wafer w.
In one embodiment, the second moving mechanism 12 is provided with a clamping detection module for detecting whether to clamp the wafer w.
The clamping detection module may include a first sensor mounted on the second driving member 123 and used to detect a first clamping position at which the first and second clamping members 121 and 122 clamp the wafer w. The first sensor determines whether the first clamping member 121 and the second clamping member 122 clamp the wafer w by detecting the moving distance of the second driving member 123, or the first sensor determines whether the wafer w is clamped by detecting the distance between two portions of the second driving member 123 connected to the first clamping member 121 and the second clamping member 122, respectively, or the first sensor may also determine whether the wafer w is clamped by detecting the loading size of the second driving member 123.
Through the first sensor, whether the second moving mechanism 12 has clamped the wafer w or unclamped the wafer w can be accurately determined, so as to determine whether the next operation is possible.
As shown in fig. 9, in one embodiment, the first driving member of the first moving mechanism 11 includes a first connecting member 112, a first slider 113, a first guide rail 114, and a first servo electric cylinder 115. One end of the first connecting member 112 is connected to the groove 111, and the other end is connected to the first slider 113. The first slider 113 is movably disposed on the first guide rail 114, and the first guide rail 114 is extended in a vertical direction so that the first slider 113 moves up and down. The first servo cylinder 115 is used to control the moving direction, the moving distance, and the like of the first slider 113 on the first guide rail 114. The operating principle of the first moving mechanism 11 is as follows: the first servo cylinder 115 controls the first sliding block 113 to move on the first guide rail 114, so that the first sliding block 113 drives the groove 111 to move up and down through the first connecting part 112.
As shown in fig. 9, in one embodiment, the second driving member 123 of the second moving mechanism 12 is connected to the vertical moving mechanism 124 and the horizontal moving mechanism 125 so that the first moving mechanism 11 can move freely in both the vertical direction and the horizontal direction. The implementation principle of the vertical moving mechanism 124 and the horizontal moving mechanism 125 is similar to that of the first driving member, and is not described herein again.
The embodiment also discloses a wafer post-processing method based on the marangoni effect, which comprises the following steps:
step S1 of pulling the wafer immersed in the cleaning liquid from the cleaning liquid;
step S2, during the process of lifting the wafer from the cleaning liquid, spraying a dry gas at a first temperature to a meniscus region of the cleaning liquid adhering to the wafer surface, so that the adhering matter on the wafer surface is peeled off from the wafer surface in a direction opposite to the lifting direction.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of the respective portions and the mutual relationships thereof. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly illustrate the structure of the various elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A wafer post-processing system based on the Marangoni effect, comprising:
the wafer lifting device is used for lifting the wafer immersed in the cleaning liquid from the cleaning liquid;
and the gas injection device is used for injecting a drying gas with a first temperature to the meniscus area of the cleaning liquid attached to the surface of the wafer in the process of lifting the wafer from the cleaning liquid so as to strip the attachments on the surface of the wafer from the surface of the wafer in the direction opposite to the lifting direction.
2. The wafer post-processing system of claim 1, wherein the gas injection apparatus comprises:
the first spraying mechanism is used for spraying the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the first surface of the wafer;
the second spraying mechanism is used for spraying the drying gas with the first temperature to the meniscus area of the cleaning liquid attached to the second surface of the wafer;
the first surface and the second surface are two opposite surfaces of the wafer respectively.
3. The wafer post-processing system of claim 2, wherein the first injection mechanism and the second injection mechanism each comprise a gas injection assembly, a rotary drive module, and a control module connected in sequence;
the control module controls the gas injection assembly to rotate through the rotation driving module so as to aim the dry gas injected by the gas injection assembly at the meniscus region.
4. The wafer post-processing system according to claim 3, wherein the gas injection assembly comprises a spray bar having a plurality of gas injection holes spaced apart from each other, the plurality of gas injection holes forming a curtain when simultaneously injecting the drying gas at the first temperature to inject the meniscus region through the curtain.
5. The wafer post-processing system of claim 3, wherein the gas injection assembly comprises a spray bar having an elongated slit disposed thereon.
6. The wafer post-processing system of claim 3, wherein the rotary drive module comprises a rotary motor and a motor driver.
7. The wafer post-processing system according to any of claims 1-6, wherein the first temperature is higher than the temperature of the cleaning solution and lower than 60 ℃.
8. The wafer post-processing system of claim 1, further comprising a gas supply source for providing a dry gas at the first temperature, the gas supply source being connected to the gas injection device by a pipe.
9. The wafer post-processing system according to claim 8, wherein a control valve for controlling on/off of the pipeline and a flow meter for controlling flow of the dry gas are arranged on the pipeline.
10. The wafer post-processing system as recited in claim 1, further comprising a cleaning tank for holding the cleaning solution.
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| CN2018106593032 | 2018-06-25 | ||
| CN201810659303.2A CN108831849A (en) | 2018-06-25 | 2018-06-25 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
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| CN201810659303.2A Pending CN108831849A (en) | 2018-06-25 | 2018-06-25 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
| CN201910517168.2A Pending CN110265327A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method based on marangoni effect |
| CN201920897473.4U Active CN210325700U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system based on marangoni effect |
| CN201910517084.9A Pending CN110391157A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method |
| CN201920898244.4U Active CN210325702U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system |
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| CN201910517168.2A Pending CN110265327A (en) | 2018-06-25 | 2019-06-14 | A kind of wafer after-treatment system and method based on marangoni effect |
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| CN201920898244.4U Active CN210325702U (en) | 2018-06-25 | 2019-06-14 | Wafer post-processing system |
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| CN110265327A (en) * | 2018-06-25 | 2019-09-20 | 清华大学 | A kind of wafer after-treatment system and method based on marangoni effect |
| CN113488413A (en) * | 2021-07-06 | 2021-10-08 | 华海清科股份有限公司 | Wafer post-processing equipment and ventilation system with flow guide function and applied by same |
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| CN110265327A (en) * | 2018-06-25 | 2019-09-20 | 清华大学 | A kind of wafer after-treatment system and method based on marangoni effect |
| CN113488413A (en) * | 2021-07-06 | 2021-10-08 | 华海清科股份有限公司 | Wafer post-processing equipment and ventilation system with flow guide function and applied by same |
| CN113488413B (en) * | 2021-07-06 | 2022-08-16 | 华海清科股份有限公司 | Wafer post-processing equipment and ventilation system with flow guide function and applied by same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108831849A (en) | 2018-11-16 |
| CN110391157A (en) | 2019-10-29 |
| CN110265327A (en) | 2019-09-20 |
| CN210325702U (en) | 2020-04-14 |
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