CN112066649A - Vacuum drying device and method used after panel substrate cleaning - Google Patents
Vacuum drying device and method used after panel substrate cleaning Download PDFInfo
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- CN112066649A CN112066649A CN202010836477.9A CN202010836477A CN112066649A CN 112066649 A CN112066649 A CN 112066649A CN 202010836477 A CN202010836477 A CN 202010836477A CN 112066649 A CN112066649 A CN 112066649A
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- 238000001291 vacuum drying Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004140 cleaning Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 title abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000001035 drying Methods 0.000 claims abstract description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000008236 heating water Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 230000003068 static effect Effects 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000009835 boiling Methods 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract description 3
- 230000018044 dehydration Effects 0.000 description 13
- 238000006297 dehydration reaction Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000002904 solvent Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B1/00—Preliminary treatment of solid materials or objects to facilitate drying, e.g. mixing or backmixing the materials to be dried with predominantly dry solids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Microbiology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Abstract
The invention relates to a vacuum drying device and a method for a panel substrate after cleaning, which are characterized in that a panel substrate is pre-dehydrated at a specific temperature, the surface tension of the panel substrate is reduced by utilizing the Marangoni effect, most of moisture on the surface of a product and a little of residual impurities after cleaning are taken away, then the power of moisture migration to the outer periphery is improved by utilizing the process of water vapor molecules diffusing on the product to be treated through vacuum drying, the drying speed is improved, the lower the boiling point of water in a vacuum environment is, the easier the removal is, and the drying effect is further ensured.
Description
Technical Field
The invention relates to the technical field of panel substrate processing, further relates to the technical field of processing of mask plates, glass substrates, silicon wafers, wafers and the like, and particularly relates to a vacuum drying device and method for cleaning panel substrates.
Background
In the field of panels, after a glass substrate, a mask plate or a semiconductor wafer and other panel substrates are cleaned by liquid medicine, the substrates are required to be rinsed by soaking in DIW (deionized water) or spraying, but excessive DIW exists on the surface of a product after rinsing, so that the problem of water stain is caused, and therefore the substrates are required to be cleaned.
According to the conventional drying method, an object to be treated is immersed in a container containing a dry liquid (isopropyl alcohol IPA). When the treated product is taken out from the container, the surface tension of the drying liquid (IPA) and the DIW is poor, the DIW on the surface of the product is peeled off, and the solvent on the surface of the product is evaporated in the atmosphere by blowing with an air knife or the like, thereby achieving the purpose of drying. However, the conventional drying method has the problems of large consumption of the drying liquid (IPA), explosion-proof design of a factory, and high operation cost.
In some cases, non-flammable solvents are used instead of dry liquids, such as Hydrofluoroethers (HFEs), but the disadvantages are also evident, in that they are more expensive than alcoholic dry solvents, the post-treatment costs are high, and furthermore, HFEs are not miscible with water, and tend to crystallize, which is not suitable for water-based cleaning treatments.
Disclosure of Invention
The invention aims to provide a vacuum drying device and a vacuum drying method for a cleaned panel substrate, which cancel the use of a drying solvent, can reduce the operation cost of a used terminal, have no detonation risk, and have higher drying efficiency and stronger applicability.
In order to achieve the purpose, the invention adopts the technical scheme that:
the invention provides a vacuum drying method for a cleaned panel substrate, which comprises the following operation steps:
step S1: transferring a product to be treated, immersing the product in pure water at 55-95 ℃, fully cleaning the product to be treated after soaking for a certain time, and preheating;
step S2: slowly separating the product to be treated from the pure water at a certain speed, and transferring the product to be treated after completely separating the pure water to a drying chamber;
step S3: introducing hot nitrogen at a certain temperature into the drying chamber, and controlling the introduction time;
step S4: heating the drying chamber by a heating device, vacuumizing the drying chamber to-100 Kpa to-101.3 Kpa, and keeping the temperature for 120-240 s;
step S5: after static charge of hot nitrogen is eliminated, introducing the hot nitrogen into the drying chamber to break vacuum, and keeping introduction of the hot nitrogen for at least 150 s;
step S6: and transferring the dried product out of the drying chamber.
For the above technical solution, the applicant has further optimization measures.
Optionally, the time for preheating the product to be processed in step S1 is 300-540S.
Optionally, the speed of separating the product to be treated from the hot water in the step S2 is 1-10 mm/S.
Optionally, the temperature of the hot nitrogen introduced in the step S3 is 55 to 60 ℃, and the introduction time is 60 to 120S.
Optionally, the temperature of the hot nitrogen introduced in the step S5 is 55-60 ℃.
Particularly, the invention also provides a vacuum drying device used for cleaning the wafer, which comprises a pre-dehydration system and a vacuum drying system, wherein a transfer conveying device is arranged between the pre-dehydration system and the vacuum drying system and is used for connecting the pre-dehydration system and the vacuum drying system in series and conveying a product to be dried, the pre-dehydration system comprises a water tank, a circulating pump and a heater, the water tank is connected with an external heater through the circulating pump and is used for adjusting the water temperature in the water tank, the vacuum drying system comprises a static charge eliminating device, a drying chamber, a nitrogen source, a heating chamber, a condenser, a temperature controller, an infrared heater and a vacuum pump, the nitrogen source is heated by the heating chamber, then is introduced into the static charge eliminating device and then is conveyed into an air inlet of the vacuum pump, the infrared heater is arranged in the drying chamber, one end of the condenser is connected with an air outlet of the drying chamber, the other end of the condenser is connected with the vacuum pump, and the infrared heater and the condenser are both connected with the temperature controller and used for adjusting the room temperature of the drying chamber.
Optionally, the pre-dehydration system further comprises a heating water tank, the heater is arranged in the heating water tank, the heating water tank is provided with a water outlet and a water inlet, one end of the heating water tank is connected with the water outlet through a pipeline, the other end of the heating water tank is connected with one end of the circulating pump, and the other end of the circulating pump is connected with the water inlet.
Optionally, the temperature in the water tank is 55-95 ℃.
Optionally, the temperature of the heating cavity is 55-60 ℃.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
according to the vacuum drying device and method for the cleaned wafer, the pre-dehydration is carried out on the panel substrate at a specific temperature, the Marangoni effect is utilized to reduce the tension of the surface of the panel substrate, so that most of moisture on the surface of a product and a few of residual impurities after cleaning are taken away, then the vacuum drying is carried out, the power of moisture migration to the outer periphery is improved by utilizing the process that water vapor molecules are diffused on the product to be treated, the drying speed is improved, the lower the boiling point of water in the vacuum environment is, the water can be removed more easily, and the drying effect is further ensured.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter, by way of illustration and not limitation, with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
FIG. 1 is a schematic workflow diagram of a vacuum drying method for panel substrate cleaning according to one embodiment of the present invention;
FIG. 2 is a graph showing pure water tension on the surface of a product according to temperature.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1:
this example describes a vacuum drying method for a panel substrate after cleaning, as shown in fig. 1, comprising the following steps:
step S1: transferring and immersing the product to be treated into pure water with the temperature of 55-95 ℃, and soaking for 300-540 s to realize full cleaning and preheating of the product to be treated;
step S2: slowly separating the product to be treated from the pure water at the speed of 1-10 mm/s, and transferring the product to be treated after completely separating the pure water to a drying chamber;
step S3: introducing hot nitrogen at the temperature of 55-60 ℃ into the drying chamber, and controlling the introduction time to be 60-120 s;
step S4: heating the drying chamber by a heating device, keeping the temperature in the drying chamber at about 60 ℃, vacuumizing the drying chamber to-100 Kpa to-101.3 Kpa, and keeping the temperature for 120-240 s;
step S5: after static charge of hot nitrogen gas at the temperature of 55-60 ℃ is eliminated, introducing the hot nitrogen gas into the drying chamber to break vacuum, and keeping the introduction time of the hot nitrogen gas at 150-180 s;
step S6: and transferring the dried product out of the drying chamber.
In the embodiment, the surface tension of the product to be treated is reduced along with the increase of the temperature by performing pre-dehydration on the panel substrate at a specific temperature, as shown in fig. 2, the product to be treated and pure water are slowly separated by utilizing the marangoni effect, and because the surface tension of the hot water is small, a surface tension gradient difference is formed on the surface layer of the slope-shaped water flow, and water molecules on the surface of the product are continuously pulled from top to bottom, so that most of water on the surface of the product and a little residual impurities after cleaning are taken away.
The water content on the product to be treated when entering the drying chamber exists in the form of liquid drops or liquid films, and the drying process in the drying chamber is the process of water vapor molecules diffusing from the product to be treated to the surrounding space. The driving force for driving the moisture to migrate to the outside is mainly the water vapor partial pressure difference delta P between the product to be treated and the surrounding space, and the drying speed is faster when the water vapor partial pressure difference delta P is larger. The delta P increasing method has two ways, namely, the temperature of the product to be treated is increased, namely, the product to be treated is heated; the second is to reduce the ambient pressure. In this embodiment, blow to the drying chamber earlier hot nitrogen gas and realize heating, arrange the micronic dust or the impurity in the extruded air simultaneously, then the evacuation again, can reduce the pressure around the pending product, just so can get rid of the moisture on product surface better, promote drying speed.
Example 2:
the embodiment describes a vacuum drying device used after wafer cleaning, which comprises a pre-dehydration system and a vacuum drying system, wherein a transfer conveying device is arranged between the pre-dehydration system and the vacuum drying system and used for being connected in series with the pre-dehydration system and the vacuum drying system and conveying products to be dried, the pre-dehydration system comprises a water tank, a circulating pump and a heater, the water tank is connected with the heater of an external device through the circulating pump and used for adjusting the water temperature in the water tank, the vacuum drying system comprises a static charge eliminating device, a drying chamber, a nitrogen source, a heating chamber, a condenser, a temperature controller, an infrared heater and a vacuum pump, the nitrogen source is heated by the heating chamber and then is introduced into the static charge eliminating device and then is conveyed into an air inlet of the vacuum pump, the infrared heater is arranged in the drying chamber, one end of the condenser is connected with an air outlet of the drying chamber, the other end of the condenser is connected with the vacuum pump, and the infrared heater and the condenser are both connected with the temperature controller and used for adjusting the room temperature of the drying chamber.
Optionally, the pre-dehydration system further comprises a heating water tank, the heater is arranged in the heating water tank, the heating water tank is provided with a water outlet and a water inlet, one end of the heating water tank is connected with the water outlet through a pipeline, the other end of the heating water tank is connected with one end of the circulating pump, and the other end of the circulating pump is connected with the water inlet.
Optionally, the temperature in the water tank is 55-95 ℃.
Optionally, the temperature of the heating cavity is 55-60 ℃.
According to the vacuum drying device and method for the cleaned wafer, the pre-dehydration is carried out on the panel substrate at a specific temperature, the Marangoni effect is utilized to reduce the tension of the surface of the panel substrate, so that most of moisture on the surface of a product and a few of residual impurities after cleaning are taken away, then the vacuum drying is carried out, the power of moisture migration to the outer periphery is improved by utilizing the process that water vapor molecules are diffused on the product to be treated, the drying speed is improved, the lower the boiling point of water in the vacuum environment is, the water can be removed more easily, and the drying effect is further ensured.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the invention, and not to limit the scope of the invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the scope of the present invention.
Claims (9)
1. A vacuum drying method used for panel base material after cleaning is characterized by comprising the following operation steps:
step S1: transferring a product to be treated, immersing the product in pure water at 55-95 ℃, fully cleaning the product to be treated after soaking for a certain time, and preheating;
step S2: slowly separating the product to be treated from the pure water at a certain speed, and transferring the product to be treated after completely separating the pure water to a drying chamber;
step S3: introducing hot nitrogen at a certain temperature into the drying chamber, and controlling the introduction time;
step S4: heating the drying chamber by a heating device, vacuumizing the drying chamber to-100 Kpa to-101.3 Kpa, and keeping the temperature for 120-240 s;
step S5: after static charge of hot nitrogen is eliminated, introducing the hot nitrogen into the drying chamber to break vacuum, and keeping introduction of the hot nitrogen for at least 150 s;
step S6: and transferring the dried product out of the drying chamber.
2. The vacuum drying method according to claim 1, wherein the preheating time of the product to be treated in the step S1 is 300-540S.
3. The vacuum drying method according to claim 1, wherein the speed of separating the product to be treated from the hot water in step S2 is 1-10 mm/S.
4. The vacuum drying method according to claim 1, wherein the temperature of the hot nitrogen gas introduced in step S3 is 55-60 ℃ and the introduction time is 60-120S.
5. The vacuum drying method according to claim 1, wherein the temperature of the hot nitrogen gas introduced in the step S5 is 55-60 ℃.
6. The utility model provides a vacuum drying device for after wafer washing, its characterized in that, includes dewatering system and vacuum drying system in advance, be provided with between dewatering system and the vacuum drying system in advance and move and carry conveyer for establish ties dewatering system and vacuum drying system in advance and carry the product of treating drying, dewatering system includes basin, circulating pumping and heater in advance, the basin passes through the circulating pumping and links to each other with the heater of peripheral hardware for adjust the temperature of water in the basin, vacuum drying system includes static charge remove device, drying chamber, nitrogen gas source, heating chamber, condenser, temperature controller, infrared heater and vacuum pump, the nitrogen gas source warp heating chamber lets in static charge remove device resends the air inlet of vacuum pump, infrared heater sets up in the drying chamber, the one end of condenser with the gas outlet of drying chamber links to each other, the other end of the condenser is connected with the vacuum pump, and the infrared heater and the condenser are both connected with the temperature controller and used for adjusting the room temperature of the drying chamber.
7. The vacuum drying device according to claim 4, wherein the pre-dewatering system further comprises a heating water tank, the heater is disposed in the heating water tank, the heating water tank is provided with a water outlet and a water inlet, one end of the heating water tank is connected to the water outlet through a pipeline, the other end of the heating water tank is connected to one end of the circulating pump, and the other end of the circulating pump is connected to the water inlet.
8. The vacuum drying apparatus according to claim 4, wherein the temperature in the water tank is 55 to 95 ℃.
9. The vacuum drying apparatus according to claim 4, wherein the temperature of the heating chamber is 55-60 ℃.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010836477.9A CN112066649A (en) | 2020-08-19 | 2020-08-19 | Vacuum drying device and method used after panel substrate cleaning |
| PCT/CN2020/135181 WO2022036946A1 (en) | 2020-08-19 | 2020-12-10 | Vacuum drying device and method for panel substrate after cleaning |
| PCT/CN2020/135362 WO2022036947A1 (en) | 2020-08-19 | 2020-12-10 | Vacuum drying method and vacuum drying apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010836477.9A CN112066649A (en) | 2020-08-19 | 2020-08-19 | Vacuum drying device and method used after panel substrate cleaning |
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| Publication Number | Publication Date |
|---|---|
| CN112066649A true CN112066649A (en) | 2020-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010836477.9A Pending CN112066649A (en) | 2020-08-19 | 2020-08-19 | Vacuum drying device and method used after panel substrate cleaning |
Country Status (2)
| Country | Link |
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| CN (1) | CN112066649A (en) |
| WO (2) | WO2022036946A1 (en) |
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| US20060168839A1 (en) * | 2005-01-19 | 2006-08-03 | Lee Ju-Won | Baking method and baking apparatus for performing the same |
| CN101526300B (en) * | 2008-03-04 | 2011-07-20 | 韩国铁钢株式会社 | Method for removing moisture from a substrate coated with a transparent electrode |
| CN202120879U (en) * | 2011-07-04 | 2012-01-18 | 常州天合光能有限公司 | Hot water heating device for cleaning and drying silicon wafers |
| CN108831849A (en) * | 2018-06-25 | 2018-11-16 | 清华大学 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
| CN210663662U (en) * | 2019-10-15 | 2020-06-02 | 苏州冠博控制科技有限公司 | Wafer nitrogen drying device |
| CN111312627A (en) * | 2020-02-27 | 2020-06-19 | 至微半导体(上海)有限公司 | Method for improving capability of nitrogen gas to remove water molecules for wafer drying |
| CN111554593A (en) * | 2020-04-29 | 2020-08-18 | 常州比太科技有限公司 | Method for drying silicon wafer after groove type cleaning and texturing |
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| JP2002050600A (en) * | 2000-05-15 | 2002-02-15 | Tokyo Electron Ltd | Substrate-processing method and substrate processor |
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| CN101718487B (en) * | 2009-12-04 | 2013-07-31 | 有研半导体材料股份有限公司 | Method and device for rapidly drying cleaned silicon wafers |
| CN102148133B (en) * | 2010-12-06 | 2012-09-05 | 北京七星华创电子股份有限公司 | Single-wafer drying device and method |
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| CN104613732A (en) * | 2013-11-05 | 2015-05-13 | 有研新材料股份有限公司 | Before-epitaxy polished section rapid drying method after cleaning |
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| CN110828343A (en) * | 2019-10-30 | 2020-02-21 | 苏州晶洲装备科技有限公司 | Substrate drying device and method |
-
2020
- 2020-08-19 CN CN202010836477.9A patent/CN112066649A/en active Pending
- 2020-12-10 WO PCT/CN2020/135181 patent/WO2022036946A1/en active Application Filing
- 2020-12-10 WO PCT/CN2020/135362 patent/WO2022036947A1/en active Application Filing
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| US20060168839A1 (en) * | 2005-01-19 | 2006-08-03 | Lee Ju-Won | Baking method and baking apparatus for performing the same |
| CN101526300B (en) * | 2008-03-04 | 2011-07-20 | 韩国铁钢株式会社 | Method for removing moisture from a substrate coated with a transparent electrode |
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| CN210663662U (en) * | 2019-10-15 | 2020-06-02 | 苏州冠博控制科技有限公司 | Wafer nitrogen drying device |
| CN111312627A (en) * | 2020-02-27 | 2020-06-19 | 至微半导体(上海)有限公司 | Method for improving capability of nitrogen gas to remove water molecules for wafer drying |
| CN111554593A (en) * | 2020-04-29 | 2020-08-18 | 常州比太科技有限公司 | Method for drying silicon wafer after groove type cleaning and texturing |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022036946A1 (en) | 2022-02-24 |
| WO2022036947A1 (en) | 2022-02-24 |
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