CN213988842U

CN213988842U - Wafer drying equipment

Info

Publication number: CN213988842U
Application number: CN202120140270.8U
Authority: CN
Inventors: 吴镐硕; 朴灵绪
Original assignee: Suzhou Enteng Semiconductor Technology Co ltd
Current assignee: Suzhou Enteng Semiconductor Technology Co ltd
Priority date: 2021-01-19
Filing date: 2021-01-19
Publication date: 2021-08-17
Anticipated expiration: 2031-01-19

Abstract

The utility model provides a wafer drying equipment, carry and draw drying bath and infrared drying bath including hot deionized water, infrared drying bath includes dry cell body and is located device, infrared heating device and quartzy division board are born to the internal wafer of drying bath, the wafer bears the device and is used for bearing the wafer, infrared heating device is used for carrying out the drying to the wafer, quartzy division board is located between infrared heating device and the wafer, treat that dry wafer passes through earlier hot deionized water carries and draws drying bath drying back warp again infrared drying bath is dry. The utility model discloses a wafer drying equipment can carry out hot deionized water to the wafer in proper order and carry out carry-on drawing dry and infrared drying, can effectively avoid local drying insufficient, especially avoids the pollution problem that the wafer edge leads to because of moisture remains, and keeps apart wafer and heating device through the quartz barrier plate in infrared heating process, can further avoid polluting, improves dry yield.

Description

Wafer drying equipment

Technical Field

The utility model relates to a semiconductor manufacturing technical field especially relates to a wafer drying equipment.

Background

The cleaning technology in the existing semiconductor process is developed based on the RCA cleaning technology published by Kern et al of RCA company 25 years ago. The RCA cleaning technique is a cleaning method based on two cleaning solutions, SC-1 (or APM, including NH4OH/H2O2/H2O) and SC-2 (or HPM, including HCl/H2O2/H2O), and then is developed into the wafer cleaning technique of today through multiple improvements.

The method is used for researching the wet method science of the wafer cleaning process, namely explaining the adsorption and shedding principle of pollutants and the reaction of the surface of the wafer in the wet method cleaning process, and is indispensable for constructing a high-level wet method cleaning process.

With the increasing miniaturization of semiconductor devices, dry cleaning research of processes is also being conducted. Although dry cleaning has been studied in the industry, it is widely believed that dry cleaning has the essential drawback of not being able to remove particulate impurities. Therefore, as long as particles in the semiconductor process cannot be avoided, all process steps in the wafer cleaning cannot be replaced by the dry cleaning, which is still indispensable for a short period of time. In this respect, it is very important to construct a high-efficiency wet cleaning process, not only for the safety of device characteristics and the yield assurance, but also for the subsequent processes to maintain high controllability and processability.

The drying process of the wafer after the wet cleaning process removes the particles, organic matters and metal impurities is also under continuous research, because the wafer completely removing the contaminants in the wet cleaning tank may absorb other contaminants during the drying process. Conventional drying methods include Spin Dry (Spin Dry) in which moisture on the wafer surface is removed by centrifugal force, maraconi Dry (mark) in which moisture on the wafer surface is removed by surface tension, and IPA Vapor Dry (IPA Vapor Dry) in which moisture on the wafer surface is removed by the principle of co-dissolution of IPA with water. Although the Spin Dry method is simple in process, due to the fact that the hydrophilic phenomenon and the hydrophobic phenomenon occur simultaneously, water stains appear on the surface of the wafer or the image depressions cannot be completely dried. In addition, in the storage polysilicon structure of a memory device such as a DRAM, there is a problem that the storage polysilicon layers adhere to each other due to the surface tension of water. The IPA Vapor Dry method is a method of replacing the residual deionized water on the wafer surface with high-temperature IPA Vapor in a closed Dry chamber and then naturally drying IPA, and this method may cause gel defects or cause adhesion between stored polysilicon layers similar to the Spin Dry method. The maraconi Dry method is to spray a small amount of IPA on the surface of the wafer, lift the wafer upward, and then use the surface tension of water to release water from the wafer surface. The Hot DIW Lift Dry (Hot deionized water pull Dry) method is similar to the maragini Dry method, but does not use IPA, and is performed in an open tank instead of a closed space by using warm water of about 50 to 60 ℃. Most of drying modes of wet cleaning equipment used in the existing high-end process are Hot DIW Lift Dry modes. However, when the Hot DIW Lift Dry processing is performed on the wafer by using the existing equipment, the drying of the wafer edge and the portion in contact with the clamping structure in the robot chuck may be insufficient when the wafer is pulled, thereby causing the particle contamination remaining on the edge portion and reducing the final production yield.

SUMMERY OF THE UTILITY MODEL

In view of the above prior art's shortcoming, the utility model aims to provide a wafer drying equipment for solve the wafer drying equipment among the prior art for single drying method, exist separately not enoughly, for example current hot deionized water drying equipment causes the wafer edge easily to have local drying insufficient, leads to marginal particle pollution, leads to final production yield to descend the scheduling problem.

For realizing above-mentioned purpose and other relevant purposes, the utility model provides a wafer drying equipment, draw dry groove and infrared drying groove including hot deionized water, infrared drying groove includes dry cell body and is located device, infrared heating device and quartzy division board are born to the internal wafer of dry cell, the wafer bears the device and is used for bearing the wafer, infrared heating device is used for carrying out the drying to the wafer, quartzy division board is located between infrared heating device and the wafer, treat that dry wafer passes through earlier hot deionized water draws dry groove drying back warp again infrared drying groove is dry.

Optionally, the infrared heating device includes an infrared heating lamp tube, and the length of the infrared heating lamp tube is greater than the diameter of the wafer.

Optionally, the heating temperature of the infrared heating device is 70-80 ℃.

Optionally, the wafer drying apparatus further includes a loading stack, through which the wafer to be dried is loaded into the hot deionized water lift drying tank.

Optionally, the surface area of the quartz isolation plate is the same as that of the drying tank body.

Optionally, the thickness of the quartz isolation plate is 1-3 cm.

Optionally, the edge of the quartz isolation plate adjacent to the wafer inlet and outlet of the drying tank body is provided with a corrugated structure.

Optionally, an exhaust port is arranged on the drying trough body, and the exhaust port is connected with the vacuum pump through an exhaust pipeline.

As above, the utility model discloses a wafer drying equipment has following beneficial effect: the utility model discloses a wafer drying equipment includes that hot deionized water carries and draws dry groove and infrared heating groove, and the wafer draws dry and infrared drying through hot deionized water in proper order, can effectively avoid local drying insufficient, especially avoids the pollution problem that the wafer edge leads to because of moisture remains, and keeps apart wafer and heating device through the quartz barrier plate in infrared heating process, can further avoid polluting, improves dry yield.

Drawings

Fig. 1 is a schematic structural diagram of a wafer drying apparatus according to the present invention.

Fig. 2 is a schematic structural diagram of a hot deionized water lifting drying tank in the wafer drying apparatus according to the present invention.

Fig. 3 is a partial view of the wafer held in the hot di water pull dry tank of fig. 2.

Description of the element reference numerals

1 hot deionized water lifting drying tank

11 trough body

12 flow guide plate

13 lifting arm

131 latch

14 hot deionized water pipeline

2 Infrared drying tank

21 drying trough body

22 wafer carrying device

23 Infrared heating device

24 quartz isolation plate

3 Loading Stack

4 exhaust pipeline

5 wafer

6 mechanical arm

Detailed Description

The following description is provided for illustrative purposes, and other advantages and features of the present invention will become apparent to those skilled in the art from the following detailed description.

Please refer to fig. 1 to 3. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limit conditions that the present invention can be implemented, so that the present invention has no technical essential meaning, and any structure modification, ratio relationship change or size adjustment should still fall within the scope covered by the technical content disclosed in the present invention without affecting the function and the achievable purpose of the present invention. Meanwhile, the terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for convenience of description, and are not intended to limit the scope of the present invention, and changes or adjustments of the relative relationship thereof may be made without substantial technical changes.

For solving all kinds of defects that present wafer drying equipment used single dry mode to exist, the utility model provides an improved wafer drying equipment. Specifically, as shown in fig. 1 to 3, the wafer drying apparatus provided by the present invention comprises a hot deionized water lifting drying tank 1 and an infrared drying tank 2, the infrared drying tank 2 comprises a drying tank body 21, and a wafer bearing device 22, an infrared heating device 23 and a quartz isolation plate 24 which are positioned in the drying tank body 21, wherein the wafer bearing device 22 is used for bearing a wafer 5, it can adopt a proper structure, such as a clamping structure, the clamping position of the wafer can be the same as or different from the clamping position in the previous hot deionized water lifting and drying step (because of infrared heating, the clamping position has stronger heat penetrability, so that the problem of insufficient local drying can not be caused even if the clamping position is the same), the infrared heating device 23 is used for drying the wafer, and the quartz isolation plate 24 is located between the infrared heating device 22 and the wafer 5. The quartz isolation plate is arranged, so that particle pollution on the surface of the wafer can be avoided, the heating uniformity of the wafer can be improved, the drying effect is improved, and the wafer to be dried is dried by the hot deionized water lifting drying groove and then is dried by the infrared drying groove (the dotted line circle in fig. 1 indicates the moving path of the wafer). The utility model discloses a wafer drying equipment can effectively avoid the local drying of wafer not abundant, especially avoids the pollution problem that the wafer edge leads to because of moisture remains, and keeps apart wafer and heating device through the quartz barrier plate in infrared heating process, can further avoid polluting, improves dry yield.

As shown in fig. 2, the utility model discloses a structure that drying Bath 1(Hot DIW Lift Bath) was carried to Hot deionized water of Wafer drying equipment is the same basically with among the prior art, specifically include an open cell body 11 in top, Guide plate 12, carry Arm 13 and Hot deionized water pipeline 14, Guide plate 12(Bath Wafer Guide) includes the bottom plate and is connected with the bottom plate and extend to the handle on cell body 11 surface, carry Arm 13 and include Chuck (Transfer Arm Chuck), be provided with the latch 131(comb) that are used for fixed Wafer 5 of broach structure on the Chuck, Hot deionized water pipeline 14 is located cell body 11 bottom and upwards sprays deionized water towards the Wafer, later under drive arrangement's drive, carry Arm 13 and drive Wafer 5 upwards promotion, the surface tension that utilizes water makes moisture break away from the Wafer surface in this process. The drying mode is clean and environment-friendly, the overall drying effect is good, and the damage to the wafer is small. However, as shown in fig. 3, a drying blind area is formed at a portion where the wafer is clamped by the latch, so that the portion cannot be dried, and particles are likely to remain in the latch to contaminate the wafer.

By way of example, the infrared heating device 23 includes an infrared heating lamp tube, the infrared heating lamp tube is connected with a power supply, the length of the infrared heating lamp tube is greater than the diameter of the wafer, the length direction of the infrared heating lamp tube is preferably parallel to the radial direction of the wafer, and the infrared heating lamp tube is preferably located right above or below the wafer. The infrared heating lamp tube can be single or multiple.

As an example, the heating temperature of the infrared heating device 23 is 70-80 ℃. In order to precisely control the heating temperature, a temperature control device (not shown) may be connected to the infrared heating device, and the specific time of the infrared heating drying may be set according to the process requirements, and is not limited.

As an example, the wafer drying apparatus further includes a loading stack 3, and the wafer 5 to be dried is loaded into the hot deionized water lifting drying tank 1 through the loading stack 3, and the wafer which is subjected to infrared drying is also removed from the wafer drying apparatus through the loading stack. The wafer drying apparatus may include a large housing (not shown) with the load stack, the hot deionized water drying bath, and the infrared drying bath all located within the housing, and a filter device may be disposed on the housing. The wafer drying equipment is also provided with a mechanical arm, and wafers are conveyed among the working stacks.

For better isolation protection effect, as an example, the surface area of the quartz isolation plate 24 is the same as the surface area of the drying tank 21, that is, the quartz isolation plate 24 covers the drying tank 21 so that the wafer is located in a closed space. Of course, the quartz separating plate 24 should not be too thick, which would increase the drying time and affect the yield of the device. Preferably, the thickness of the quartz isolation plate 24 is 1-3 cm.

As an example, the edge of the quartz isolation plate 24 adjacent to the wafer inlet/outlet of the drying chamber 21 has a corrugated structure, which can enhance the mechanical performance.

As an example, an exhaust port (not shown) is disposed on the drying tank 21, and the exhaust port is connected to a vacuum pump (not shown) via an exhaust pipeline 4, so that hot exhaust is performed during the drying process, particles on the surface of the wafer can be removed more effectively, and the cleanliness of the surface of the wafer can be improved.

To sum up, the utility model provides a wafer drying equipment, draw dry groove and infrared drying groove including hot deionized water, infrared drying groove includes dry cell body and is located device, infrared heating device and quartzy division board are born to the wafer in the dry cell body, the wafer bears the device and is used for bearing the wafer, infrared heating device is used for carrying out the drying to the wafer, quartzy division board is located between infrared heating device and the wafer, treat that dry wafer passes through earlier hot deionized water draws dry groove drying back and passes through again infrared drying groove is dry. The utility model discloses a wafer drying equipment includes that hot deionized water carries and draws dry groove and infrared heating groove, and the wafer draws dry and infrared drying through hot deionized water in proper order, can effectively avoid local drying insufficient, especially avoids the pollution problem that the wafer edge leads to because of moisture remains, and keeps apart wafer and heating device through the quartz barrier plate in infrared heating process, can further avoid polluting, improves dry yield. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims

1. A wafer drying device is characterized by comprising a hot deionized water lifting drying groove and an infrared drying groove, wherein the infrared drying groove comprises a drying groove body, a wafer bearing device, an infrared heating device and a quartz isolation plate, the wafer bearing device, the infrared heating device and the quartz isolation plate are positioned in the drying groove body, the wafer bearing device is used for bearing a wafer, the infrared heating device is used for drying the wafer, the quartz isolation plate is positioned between the infrared heating device and the wafer, and the wafer to be dried is dried by the hot deionized water lifting drying groove and then is dried by the infrared drying groove.

2. The wafer drying apparatus of claim 1, wherein the infrared heating device comprises an infrared heating lamp having a length greater than a diameter of the wafer.

3. The wafer drying apparatus according to claim 1, wherein the heating temperature of the infrared heating device is 70 to 80 ℃.

4. The wafer drying apparatus of claim 1, further comprising a loading stack through which wafers to be dried are loaded into the hot DI water pull dry tank.

5. The wafer drying apparatus as claimed in claim 1, wherein the quartz isolation plate has a surface area identical to that of the drying tank.

6. The wafer drying apparatus according to claim 1, wherein the quartz spacer has a thickness of 1 to 3 cm.

7. The wafer drying equipment as claimed in claim 1, wherein the edge of the quartz isolation plate adjacent to the wafer inlet and outlet of the drying groove body has a corrugated structure.

8. The wafer drying equipment as claimed in any one of claims 1 to 7, wherein the drying tank body is provided with an exhaust port, and the exhaust port is connected with a vacuum pump through an exhaust pipeline.