CN111276433B - Hot nitrogen injection method for improving drying quality of wafer - Google Patents
Hot nitrogen injection method for improving drying quality of wafer Download PDFInfo
- Publication number
- CN111276433B CN111276433B CN202010125610.XA CN202010125610A CN111276433B CN 111276433 B CN111276433 B CN 111276433B CN 202010125610 A CN202010125610 A CN 202010125610A CN 111276433 B CN111276433 B CN 111276433B
- Authority
- CN
- China
- Prior art keywords
- wafer
- inlet
- drying chamber
- inert gas
- hot nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a hot nitrogen injection method for improving the drying quality of a wafer, which comprises the steps of introducing constant-temperature and constant-pressure hot nitrogen into a drying chamber through a first inlet by using a hot nitrogen supplier, and introducing heated first inert gas into the drying chamber by using a gas jet module according to a ventilation adjustment strategy; the gas jet flow module comprises a plurality of nozzles capable of adjusting jet flow, the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of hot nitrogen sprayed by the nozzles, and the hot nitrogen spraying method further comprises a turbulence strategy for increasing the retention time of the hot nitrogen in the drying chamber. According to the invention, the gas jet module is arranged at the first inlet, so that the hot nitrogen has enough kinetic energy, and the micropore array plate for enabling the hot nitrogen sprayed by the nozzle to be rapidly and uniformly distributed in the whole drying chamber is arranged at the first inlet, so that the water on the wafer can be uniformly dried, and the drying quality of the wafer is improved.
Description
Technical Field
The invention relates to the technical field of wafer drying, in particular to a hot nitrogen injection method for improving the drying quality of a wafer.
Background
In the requirements of semiconductor wafer cleaning technology, the wafer drying technology is indispensable, the wafer drying is the final ending action in the wet cleaning process, it is necessary to ensure effective removal of residual moisture on the wafer surface and control of surface cleanliness, it is also necessary to be able to sufficiently remove residual water molecules on the wafer surface or various organic solvents used in the drying process or residues of other related solvents, especially the problem of incomplete drying may occur under the condition of removing moisture on the wafer surface through the fusion of two phases of gas and solvent and the change of phase, but there is no method in the prior art which can well solve the problem of incomplete drying generated in the wafer drying process, so that the drying quality of the wafer cannot be improved.
Disclosure of Invention
According to the invention, the gas jet flow module and the micropore array plate are arranged at the first inlet, so that the first inert gas jetted by the nozzle is rapidly and uniformly distributed in the whole drying chamber, the wafer can be uniformly dried, and the drying quality of the wafer is improved.
In order to achieve the purpose, the invention provides the following technical scheme: a hot nitrogen spraying method for improving the drying quality of a wafer is provided, and a wafer drying device is provided and comprises a drying chamber, a wafer accommodating chamber and a first inert gas supplier, wherein the wafer accommodating chamber is used for accommodating the wafer, the drying chamber is used for retaining a first inert gas, the drying chamber comprises a first inlet, a first outlet and an inner wall structure extending from the first inlet to the first outlet, the wafer accommodating chamber is arranged inside the drying chamber and comprises a plurality of washing tanks matched with the wafer; the drying chamber also comprises a third inlet for introducing the isopropanol liquid into the drying chamber and a third outlet for discharging the isopropanol liquid, and the third inlet and the third outlet are arranged on one side, far away from the first inlet, in the drying chamber;
the hot nitrogen injection method comprises the following steps:
step S1, placing the wafers to be dried into the wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form a wafer gap;
step S2, opening the third inlet under the state that the third outlet is closed, introducing isopropanol liquid into the drying chamber until each wafer in the wafer accommodating chamber is completely immersed in the isopropanol liquid, closing the third inlet for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafers, opening the third outlet to completely discharge the isopropanol liquid, and closing the third outlet;
step S3, hermetically connecting the output port of the first inert gas supplier with the first inlet so as to introduce the heated first inert gas into the drying chamber through the first inlet;
step S4, the first inert gas flows from the first inlet to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer;
the hot nitrogen injection method further comprises the steps of introducing a first inert gas with constant temperature and constant pressure into the drying chamber through a first inlet by using a first inert gas supplier, and arranging a gas jet module at the first inlet so that the first inert gas can provide enough kinetic energy, wherein the gas jet module introduces the heated first inert gas into the drying chamber according to a ventilation adjustment strategy; the gas jet flow module comprises a plurality of nozzles capable of adjusting the flow rate of the jet flow, a micropore array plate used for enabling first inert gas jetted by the nozzles to be rapidly and uniformly distributed in the whole drying chamber is further arranged at the first inlet, and the ventilation adjusting strategy comprises an on-off time control step used for adjusting the on-off time of the first inert gas jetted by the nozzles and an air flow angle adjusting step used for adjusting the angle of the first inert gas jetted by the nozzles; the hot nitrogen injection method further includes a turbulation strategy for increasing residence time of the first inert gas inside the drying chamber.
Preferably, the turbulent flow strategy comprises providing a mesh plate at the third outlet for passing the isopropanol liquid and the first inert gas.
Preferably, the inner wall structure comprises an interlayer region for heat preservation, the interlayer region is provided with two openings, the two openings comprise a second inlet and a second outlet, the second inlet is arranged on one side, far away from the first inlet, of the drying chamber, the second outlet is arranged on one side, far away from the second inlet, of the drying chamber, and the second outlet is communicated with the first outlet.
Preferably, the vortex strategy further comprises that a vortex baffle is arranged at the second inlet, and a plurality of strip-shaped holes are formed in the vortex baffle.
Preferably, the at least three gas flow paths include a first path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer gap, a second path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer washing tank, a third path from the first inlet to the bottom opening of the wafer accommodating chamber through the outer sidewall of the wafer accommodating chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer sidewall of the interlayer region.
Preferably, the on-off time control step is set to intermittently blow air to the nozzle, the air-blowing time is set to be 1 second, and the ratio of the air-blowing time to the air-off time is 1-10.
Preferably, the gas flow angle adjusting step is set to spray the wafer by taking the vertical center line of the wafer as a reference and spreading in two directions for a total range of 100-130 degrees.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the gas jet module and the micropore array plate are arranged at the first inlet, so that the first inert gas jetted by the nozzle is rapidly and uniformly distributed in the whole drying chamber, the wafer can be uniformly dried, the drying quality of the wafer is improved, and the problem that the surface tension of water molecules and isopropanol molecules attached to the surface of the wafer is not easily damaged under the condition of two-phase fusion of gas and solvent, so that the wafer is not dried fully is solved.
Drawings
FIG. 1 is a schematic structural diagram of a mesh plate in the wafer drying apparatus according to the present invention;
FIG. 2 is a schematic view of a gas jet module of the wafer drying apparatus according to the present invention;
FIG. 3 is a schematic view of a nozzle of the wafer drying apparatus according to the present invention;
FIG. 4 is a schematic structural diagram of a wafer drying apparatus according to the present invention;
FIG. 5 is a schematic cross-sectional front view of the wafer drying apparatus of the present invention;
FIG. 6 is a schematic structural view of an anodic oxidation insulation layer according to the present invention;
FIG. 7 is a schematic view showing the flow structure of the anodic oxidation insulation layer plus the first inert gas in the present invention.
In the figure: 1. a drying chamber; 101. a first inlet; 102. a first outlet; 103. an interlayer region; 1031. a second inlet; 1032. a second outlet; 1033. a turbulence baffle; 104. a third inlet; 105. a third outlet; 106. a tapered structure; 2. a wafer accommodating chamber; 201. a washing tank; 203. a mesh plate; 5. a wafer; 6. an anodic oxidation heat-insulating layer; 601. an auxiliary tubular heater. 7. A gas jet module; 701. A nozzle; 702. a plate with a microwell array.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-3, according to an embodiment of the present invention, a hot nitrogen injection method for improving wafer drying quality is provided, which includes a drying chamber 1, a wafer accommodating chamber 2 for accommodating a wafer, and a first inert gas supplier, wherein the drying chamber 1 is configured to retain a first inert gas, the drying chamber 1 includes a first inlet 101 and a first outlet 102, and an inner wall structure extending from the first inlet 101 to the first outlet 102, the wafer accommodating chamber 2 is disposed inside the drying chamber 1 and includes a plurality of washing grooves 201 matching with the wafer 5; the drying chamber 1 further comprises a third inlet 104 for introducing the isopropanol liquid into the drying chamber 1 and a third outlet 105 for discharging the isopropanol liquid, wherein the third inlet 104 and the third outlet 105 are both arranged on one side of the drying chamber 1 far away from the first inlet 101;
the hot nitrogen injection method comprises the following steps:
step S1, placing the wafers 5 to be dried into the wafer accommodating chamber 2, and placing each wafer 5 into the corresponding washing tank 201 with a space therebetween to form a wafer 5 gap;
step S2, opening the third inlet 104 to introduce the isopropanol liquid into the drying chamber 1 until each wafer 5 in the wafer accommodating chamber 2 is completely immersed in the isopropanol liquid when the third outlet 105 is closed, closing the third inlet 104 for 1-3min to completely compatibilize the isopropanol molecules with the water molecules on the wafer 5, opening the third outlet 105 to completely discharge the isopropanol liquid, and closing the third outlet 105;
step S3, hermetically connecting the output port of the first inert gas supplier with the first inlet 101 to introduce the heated first inert gas into the drying chamber 1 through the first inlet 101;
step S4, flowing the first inert gas from the first inlet 101 to a side of the drying chamber 1 away from the first inlet 101 along at least three gas flow paths passing through the wafer 5;
the hot nitrogen spraying method further comprises the steps of introducing a first inert gas with constant temperature and constant pressure into the drying chamber 1 through a first inlet 101 by using a first inert gas supplier, and arranging a gas jet module 7 at the first inlet 101 so that the first inert gas can provide enough kinetic energy, wherein the gas jet module 7 introduces the heated first inert gas into the drying chamber 1 according to a ventilation adjusting strategy; the gas jet module 7 comprises a plurality of nozzles 701 capable of adjusting the jet flow, a micropore array plate 702 used for enabling the first inert gas jetted by the nozzles 701 to be rapidly and uniformly distributed in the whole drying chamber 1 is further arranged at the first inlet 101, and the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the first inert gas jetted by the nozzles 701 and an air flow angle adjusting step for adjusting the angle of the first inert gas jetted by the nozzles 701; the hot nitrogen injection method further comprises a turbulence strategy for increasing the residence time of the first inert gas inside the drying chamber 1.
Through set up gas jet module 7 and be used for making the micropore array board 702 that the whole drying chamber 1 was evenly covered rapidly to the first inert gas that nozzle 701 jetted in first entry 101 department, can make wafer 5 by even drying, improved the drying quality of wafer, solved under the condition of the two-phase fusion of gas and solvent, the surface tension of the attached hydrone and the isopropyl alcohol molecule at wafer 5 surface is difficult to be destroyed to lead to the not enough problem of wafer drying.
Preferably, the turbulent flow strategy comprises providing a mesh plate 203 at the third outlet 105 for passing the isopropanol liquid and the first inert gas. Can reduce the space of nitrogen gas circulation in drying chamber 1 to a certain extent through setting up of mesh board 203 for first inert gas can flow back to 5 lower surfaces of wafer and carry out the secondary drying process after receiving the separation of mesh board 203, increases the effective contact time of first inert gas and wafer 5, and promotes drying quality.
Preferably, the inner wall structure comprises an interlayer region 103 for heat preservation, the interlayer region 103 has two openings, including a second inlet 1031 disposed at a side of the drying chamber 1 far from the first inlet 101 and a second outlet 1032 disposed at a side of the drying chamber 1 far from the second inlet 1031, and the second outlet 1032 is communicated with the first outlet 102.
Preferably, the turbulence strategy further comprises a turbulence baffle 1033 arranged at the second inlet 1031, and a plurality of strip-shaped holes are formed in the turbulence baffle 1033. The setting of vortex baffle 1033 can increase the residence time of nitrogen gas in drying chamber 11 to can play the effect of a vortex to the air current field originally in drying chamber 11, increase the volatilization effect of water molecule from the wafer surface.
Preferably, the at least three gas flow paths include a first path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the gap of the wafer 5, a second path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the wafer 5 washing tank 201, a third path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the outer sidewall of the wafer accommodating chamber 2, and a fourth path from the first inlet 101 to the second inlet 1031 of the interlayer region 103 through the outer sidewall of the interlayer region 103.
Preferably, the on-off time control step is configured to intermittently blow air from the nozzle 701, the air flow time is set to 1 second, and the ratio of the air flow time to the air off time is 1-10.
Preferably, the gas flow angle adjusting step is configured to spray the wafer 5 with a total of 100 degrees to 130 degrees of bidirectional expansion with respect to the vertical center line of the wafer 5. The gas jet flow forms a circulating gas flow field between the jet flow module and the drying groove body, water molecules on the surface of the wafer 5 vibrate through intermittent jet, and further the surface tension of the water molecules is damaged or the limitation of the surface tension of the water molecules is reduced, so that the drying effect can be rapidly improved.
The interlayer region 103 achieves the effect of adding the first inert gas to the buffer layer which is not accidentally leaked to the discharge pipeline region, the utilization efficiency of the first inert gas is improved, and the four gas flow paths passing through the wafer 5 are arranged to respectively dry the surface of the wafer 5, the edge of the wafer accommodating chamber 2 and the outer side wall of the interlayer region 103, so that the drying efficiency of the wafer 5 is effectively improved.
Preferably, the third outlet 105 is intermittently opened and closed to enhance and optimize the flow paths of the nitrogen gas stream and the isopropanol liquid stream without changing the shape configuration of the various components within the cell body.
Preferably, the third outlet 105 is disposed at the center of the bottom in the drying chamber 1 and forms a spiral flow distribution of the isopropanol liquid when the isopropanol liquid is discharged by designing the bottom of the drying chamber 1 to be a conical structure 106 with a downward inclined angle, so that the isopropanol molecules are uniformly adhered to the surface of the wafer.
In an embodiment of the present invention, the first inert gas injection method requires a groove size suitable for the wafer size and nitrogen nozzles 701 arranged in an array, the nitrogen nozzles 701 arranged in an array may be installed on a door panel of a symmetrically opened and closed link device, and the nitrogen nozzles 701 may be installed at the lower end of the opened and closed door panel, thereby reducing unnecessary arrangement of relative space. The nitrogen nozzle 701 is positioned beyond the highest point of the wafer 5 to ensure that the aerosol line sprayed by the nozzle 701 and added with the first inert gas can be completely sprayed on the wafer 5. The spraying range of the nitrogen nozzle 701 is controlled to be 100-130 degrees in total by the bidirectional expansion of the center line of the nozzle, and the spraying ranges of the nozzles 701 at the two sides are formed into a spraying range which is intersected by the spraying ranges of the symmetrical left and right nozzles 701, so that the first inert gas is sprayed to effectively cover the complete wafer 5.
Preferably, the interlayer region 103 has two openings, including a second inlet 1031 disposed at a side of the drying chamber 1 far from the first inlet 101 and a second outlet 1032 disposed at a side of the drying chamber 1 far from the second inlet 1031, and the second outlet 1032 is communicated with the first outlet 102.
Preferably, the at least three gas flow paths include a first path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the gap of the wafer 5, a second path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the wafer 5 washing tank 201, a third path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the outer sidewall of the wafer accommodating chamber 2, and a fourth path from the first inlet 101 to the second inlet 1031 of the interlayer region 103 through the outer sidewall of the interlayer region 103.
As shown in fig. 4 and 5, in an embodiment of the present invention, a top plate module 203 for converging a first inert gas to flow to the bottom of the wafer 5 is disposed at the bottom of the wafer accommodating chamber 2, and an exhaust slit communicating with the inside and the outside of the wafer accommodating chamber 2 is disposed between the washing baths, and a gas jet module is disposed at the first inlet 101 so that the first inert gas has sufficient kinetic energy, a first gap is left between the top plate module 203 and the wafer 5, the gas jet module includes a plurality of nozzles capable of adjusting the flow rate of the jet gas, and the first inert gas forms a circulating gas flow field among the gas jet module, the wafer accommodating chamber 2 and the top plate module 203 and is exhausted from the wafer accommodating chamber 2 through the exhaust slit and the gap between the wafer accommodating chamber 2 and the top plate module 203. By providing a ceiling module 203 at the bottom of the wafer chamber 2 for converging the first inert gas to the bottom of the wafer 5, the first inert gas can form a circulating gas flow field among the gas jet module, the wafer chamber 2 and the ceiling module 203, thereby improving the drying efficiency of the patterned wafer 5.
As shown in fig. 6, in an embodiment of the present invention, an anodic oxidation insulation layer 6 for maintaining the thermal kinetic energy of the first inert gas is designed on the outer sidewall of the drying chamber 1, and an auxiliary tubular heater 601 is embedded in the anodic oxidation insulation layer 6 for auxiliary heating; furthermore, electronic thermometers for detecting temperature are respectively arranged on the outer side wall of the drying chamber 1 and the inner side wall of the drying chamber 1, and the auxiliary tubular heater 601 is controlled to heat by detecting the temperature difference corresponding to the inner side and the outer side in a linkage manner, so as to control and adjust the temperature of the first inert gas in the drying chamber 1. The auxiliary tubular heater 601 can provide the first inert gas with thermodynamic energy lost in the drying process, and avoid uneven drying of the upper and lower ends of the wafer 5 caused by the reduction of the temperature of the first inert gas from top to bottom.
As shown in fig. 7, a schematic view of the airflow structure of the anodic oxidation insulating layer 6 and the first inert gas is shown, the thermal energy provided by the insulating layer for the first inert gas diffuses from the sidewall of the drying chamber 1 to the inside of the drying chamber 1, and at the same time, the moisture on the wafer 5 is volatilized outside the wafer 5 under the action of the first inert gas.
In an embodiment of the present invention, the drying chamber 1 further includes a third inlet 104 for introducing the isopropanol liquid into the drying chamber 1 and a third outlet 105 for discharging the isopropanol liquid, and the third inlet 104 and the third outlet 105 are both disposed on a side of the drying chamber 1 away from the first inlet 101. Opening the third inlet 104 to introduce the isopropanol liquid into the drying chamber 1 under the state that the third outlet 105 is closed until each wafer 5 in the wafer accommodating chamber 2 is completely immersed in the isopropanol liquid, closing the third inlet 104 for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafer 5, opening the third outlet 105 to ensure that the isopropanol liquid is completely discharged, and closing the third outlet 105; then, the output port of the first inert gas supplier is hermetically connected with the first inlet 101, and the first inlet 101 is used for introducing a first inert gas with constant temperature and constant pressure into the drying chamber 1 according to a ventilation adjustment strategy, so that the moisture on the surface of the wafer 5 is removed before the volatilization point by utilizing the two-phase fusion and phase change of the gas phase of the first inert gas and the liquid phase of the isopropanol.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (7)
1. A hot nitrogen spraying method for improving the drying quality of a wafer is characterized in that a wafer drying device is provided, the wafer drying device comprises a drying chamber, a wafer accommodating chamber and a hot nitrogen gas supplier, the wafer accommodating chamber is used for accommodating the wafer, the drying chamber is used for retaining the hot nitrogen gas, the drying chamber comprises a first inlet, a first outlet and an inner wall structure, the inner wall structure extends from the first inlet to the first outlet, the wafer accommodating chamber is arranged inside the drying chamber and comprises a plurality of washing tanks matched with the wafer; the drying chamber also comprises a third inlet for introducing the isopropanol liquid into the drying chamber and a third outlet for discharging the isopropanol liquid, and the third inlet and the third outlet are arranged on one side, far away from the first inlet, in the drying chamber;
the hot nitrogen injection method comprises the following steps:
step S1, placing the wafers to be dried into the wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form a wafer gap;
step S2, opening the third inlet under the state that the third outlet is closed, introducing isopropanol liquid into the drying chamber until each wafer in the wafer accommodating chamber is completely immersed in the isopropanol liquid, closing the third inlet for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafers, opening the third outlet to completely discharge the isopropanol liquid, and closing the third outlet;
step S3, hermetically connecting the output port of the hot nitrogen gas supplier with the first inlet so as to introduce the heated first inert gas into the drying chamber through the first inlet;
step S4, the first inert gas flows from the first inlet to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer;
the hot nitrogen injection method further comprises the steps of introducing a first inert gas with constant temperature and constant pressure into the drying chamber through a first inlet by using a first inert gas supplier, and arranging a gas jet module at the first inlet so that the first inert gas can provide enough kinetic energy, wherein the gas jet module introduces the heated first inert gas into the drying chamber according to a ventilation adjustment strategy; the gas jet flow module comprises a plurality of nozzles capable of adjusting the flow rate of the jet flow, a micropore array plate used for enabling first inert gas jetted by the nozzles to be rapidly and uniformly distributed in the whole drying chamber is further arranged at the first inlet, and the ventilation adjusting strategy comprises an on-off time control step used for adjusting the on-off time of the first inert gas jetted by the nozzles and an air flow angle adjusting step used for adjusting the angle of the first inert gas jetted by the nozzles; the hot nitrogen injection method further includes a turbulation strategy for increasing residence time of the first inert gas inside the drying chamber.
2. The method of claim 1, wherein the turbulating strategy comprises providing a mesh plate at the third outlet for the passage of the isopropanol liquid and the first inert gas.
3. The method as claimed in claim 1, wherein the inner wall structure includes a sandwich region for heat insulation, the sandwich region has two openings, and includes a second inlet disposed at a side of the drying chamber far from the first inlet and a second outlet disposed at a side of the drying chamber far from the second inlet, the second outlet is communicated with the first outlet.
4. The method as claimed in claim 3, wherein the turbulence strategy further comprises disposing a turbulence baffle at the second inlet, wherein the turbulence baffle has a plurality of holes.
5. The method as claimed in claim 4, wherein the at least three gas flow paths include a first path from the first inlet to the bottom opening of the chamber through the wafer gap, a second path from the first inlet to the bottom opening of the chamber through the wafer scrubber, a third path from the first inlet to the bottom opening of the chamber through the outer sidewall of the chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer sidewall of the interlayer region.
6. The method as claimed in claim 1, wherein the hot nitrogen injection method for improving the drying quality of the wafer comprises the following steps: the on-off time control step is set to enable the nozzle to intermittently jet air, the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10.
7. The method as claimed in claim 1, wherein the hot nitrogen injection method for improving the drying quality of the wafer comprises the following steps: the gas flow angle adjusting step is set to spray the wafer by the amplitude of 100-130 degrees of bidirectional expansion with the vertical center line of the wafer as the reference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010125610.XA CN111276433B (en) | 2020-02-27 | 2020-02-27 | Hot nitrogen injection method for improving drying quality of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010125610.XA CN111276433B (en) | 2020-02-27 | 2020-02-27 | Hot nitrogen injection method for improving drying quality of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111276433A CN111276433A (en) | 2020-06-12 |
| CN111276433B true CN111276433B (en) | 2022-03-18 |
Family
ID=71004142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010125610.XA Active CN111276433B (en) | 2020-02-27 | 2020-02-27 | Hot nitrogen injection method for improving drying quality of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111276433B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105513999B (en) * | 2015-12-10 | 2019-04-05 | 北京七星华创电子股份有限公司 | A kind of two-phase flow atomized spray cleaning device and cleaning method with gas shield |
| CN105665339B (en) * | 2016-02-17 | 2018-04-06 | 上海华力微电子有限公司 | A kind of drying device and drying means for groove profile wet method equipment |
| CN107424908B (en) * | 2016-05-24 | 2021-03-02 | 江苏鲁汶仪器有限公司 | Wafer processing method |
| CN108831849A (en) * | 2018-06-25 | 2018-11-16 | 清华大学 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
| CN109378289A (en) * | 2018-11-29 | 2019-02-22 | 杭州众硅电子科技有限公司 | A kind of system and method for rinsing with dry wafer |
| CN110718488A (en) * | 2019-10-21 | 2020-01-21 | 深圳市思坦科技有限公司 | Wafer drying device and method |
-
2020
- 2020-02-27 CN CN202010125610.XA patent/CN111276433B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111276433A (en) | 2020-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7448604B2 (en) | Heat treatment apparatus | |
| CN111312581B (en) | Exhaust method capable of improving wafer drying efficiency | |
| CN111312627B (en) | Method for improving capability of nitrogen gas to remove water molecules for wafer drying | |
| CN111276433B (en) | Hot nitrogen injection method for improving drying quality of wafer | |
| CN111312626B (en) | Patterned wafer drying method | |
| KR20050019456A (en) | Apparatus and method for cleaning semiconductor substrates | |
| CN111312580B (en) | Micro-amplitude vibration method for high aspect ratio graphic wafer | |
| KR20030047511A (en) | drying apparatus and drying method for enhancing Marangoni effect | |
| JP2007134408A (en) | Substrate processing apparatus | |
| CN117244487B (en) | Mixing arrangement of isopropyl alcohol and nitrogen gas | |
| US8732978B2 (en) | Drying silicon particles and recovering solvent | |
| JP2006310759A (en) | Substrate processing apparatus | |
| WO2024051334A1 (en) | Isopropanol and nitrogen mixing tank applied to wafer drying devices | |
| KR20230162916A (en) | Chamber apparatus for buffering wafer | |
| CN105826221B (en) | A kind of device of drying method for substrate and realization this method | |
| CN211654777U (en) | Promote wafer drying device of dry cleanliness factor | |
| US20050045208A1 (en) | Apparatus and method for cleaning semiconductor substrates | |
| CN205789890U (en) | Roasting plant | |
| KR101541867B1 (en) | Solar wafer drying system | |
| CN211320059U (en) | Device for drying and decontaminating cleaned silicon wafer | |
| CN211071105U (en) | Silicon wafer cleaning tank | |
| CN111211043A (en) | Drying method for improving wafer drying efficiency | |
| CN111192843A (en) | Device and method for drying and decontaminating silicon wafer after cleaning | |
| KR102249453B1 (en) | Cleaning method of semiconductor substrate and cleaning system of semiconductor substrate for the same | |
| JP4694814B2 (en) | Drying apparatus, exhaust unit, and method for drying semiconductor substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |