JP4694814B2 - Drying apparatus, exhaust unit, and method for drying semiconductor substrate - Google Patents

Description

  The present invention relates to a drying apparatus and method for drying a semiconductor substrate, and more particularly to a drying apparatus and method for drying a semiconductor substrate using an exhaust unit.

  Cleaning a semiconductor substrate such as a semiconductor wafer is a useful process for improving the normal operation and yield of a semiconductor device. If the semiconductor substrate cleaning process is omitted, various problems may occur. In other words, a semiconductor device manufactured without this cleaning process may be erroneously moved.

  A conventional method for cleaning a semiconductor substrate includes performing a wet cleaning process using a chemical solution to remove impurities in the semiconductor substrate. The chemical solution remaining on the semiconductor substrate after the wet cleaning process should be removed.

  The conventional method for removing the chemical solution on the semiconductor substrate can be performed by moving the semiconductor substrate to different stages such as a rinse stage and a drying stage. As shown in FIG. 1, the conventional rinsing / drying apparatus includes a rinsing chamber 101, a drying chamber 103, a gas supply unit 105 including a gas inlet tube 105a, and an exhaust port 107.

  While the rinsing process is performed in the rinse stage, deionized water 109 is supplied into the rinse chamber 101 as shown in FIG. The semiconductor wafer 111 having the chemical solution residue is immersed in the deionized water 109. Residues of the chemical solution are removed in the rinse chamber 101, and the deionized water 109 is adsorbed on the surface of the rinsed semiconductor wafer 111.

  The rinsing step is followed by a drying step. The rinsed semiconductor wafer 111 rises from the rinse chamber 101 into the drying chamber 103 during the drying process. At the same time, a gas 115, for example, isopropyl alcohol (IPA) is injected into the drying chamber 103 from the gas supply device 105. The gas 115 injected into the drying chamber 103 moves toward the semiconductor wafer 111.

  The gas 115 passes through the upper portion of the semiconductor wafer 111 and is exhausted by the exhaust port 107 of the drying chamber 103. When the semiconductor wafer 111 is sufficiently dried, the drying process ends and the process of removing the chemical solution remaining on the semiconductor wafer 111 during the wet cleaning process is completed.

  When the semiconductor wafer 111 is dried using the conventional rinsing / drying apparatus described above, water spots 113a and 113b are formed on the semiconductor wafer 111 as shown in FIG. One reason why the water spots 113a and 113b are formed is that the flow of the gas 115 is not uniform during the drying process in which the gas 115 is injected into the drying chamber 103 and flows toward the semiconductor wafer 111. It is.

  Such water spots 113a and 113b are formed at least at two different points. Among the water spots 113a and 113b, the first water spots 113a can be formed on both sides of the upper region of the semiconductor wafer 111 corresponding to the opposite side of the flat zone 111a, and the second of the water spots 113a and 113b. The water spots 113b are formed adjacent to the flat zone 111a.

  Such water spots 113a and 113b become contaminated particles and drastically reduce the yield of the semiconductor element. Therefore, in order to prevent the formation of the water spots 113 a and 113 b, it is necessary to control the gas 115 to flow uniformly over the semiconductor wafer 111.

  In recent years, the Marangoni principle has been widely used in the drying process in order to maximize the drying efficiency. A method and apparatus for drying a substrate using the Marangoni principle is disclosed in Japanese Patent Application Laid-Open No. 2003-228561 under the title “Method and apparatus for drying a substrate” by Fishkin et al. According to fishkin or the like, deionized water in the storage container is discharged through a valve provided at the discharge port of the storage container during the drying process. The valve is controlled by a liquid water level control system. Therefore, in order to gradually drop the liquid level in the storage container, it is necessary to precisely control the valve.

Further, an apparatus and a method for drying a substrate without using the Marangoni principle are disclosed in Japanese Patent Application Laid-Open No. 2003-228867 by Asada et al. Under the title “Method and apparatus for drying a semiconductor substrate”. According to Asada et al., The rinsed substrate is moved from a rinsing bath filled with deionized water into a dry drying bath. Subsequently, the drying tank is sealed. The drying tank includes a plurality of nozzles for injecting a drying gas onto the dried substrate. The drying gas is injected onto the rinsed wafer along a direction inclined by 20 ° to 50 ° from the vertical direction in order to maximize the drying efficiency. However, this drying method does not use the Marangoni principle. Therefore, it is difficult to increase the drying effect as compared with the drying method using the Marangoni principle.
US Pat. No. 5,884,640 US Pat. No. 6,158,141

  A technical problem to be solved by the present invention is to provide an exhaust unit that uniformly controls the flow of a drying gas injected into a drying chamber.

  Another technical problem to be solved by the present invention is to provide a drying apparatus having an exhaust unit for uniformly controlling a flow of a drying gas injected into a drying chamber.

  Another technical problem to be solved by the present invention is to provide a method of drying a semiconductor substrate using a drying apparatus having an exhaust unit for uniformly controlling a flow of a drying gas injected into a drying chamber. It is in.

The present invention includes a drying chamber for supplying a desiccant to dry a substrate, and a plurality of exhaust holes for determining a flow rate and a distribution of the desiccant to uniformly dry the substrate. seen containing an exhaust unit for controlling the flow of the drying material to flow much toward the center region, the than the exhaust unit, for changing the flow of the drying material flowing through the plurality of exhaust holes A drying apparatus comprising at least two exhaust parts that interact with each other .

According to another aspect of the present invention, there is provided a plurality of exhaust holes for supplying a desiccant for drying the substrate and for determining a flow rate and a distribution of the desiccant to uniformly dry the substrate. at least by using the exhaust unit provided with one exhaust components, wherein the look-containing and controlling the flow of the drying material to flow more in the central region, the than the end of the exhaust unit, the flow of the drying material has a Is controlled using at least two exhaust components that interact to change the flow rate of the desiccant flowing through the plurality of exhaust holes .

  According to one embodiment of the present invention, an apparatus for rinsing and drying a semiconductor substrate is provided. The apparatus includes a rinse chamber, a drying chamber, and an exhaust unit.

  In some embodiments of the present invention, the rinse chamber may provide sufficient space for a rinse process along with a wet cleaning process.

  In another embodiment, the rinse chamber includes at least two horizontal exhaust slits that penetrate upper regions of both side walls of the rinse chamber.

  In another embodiment, the drying chamber may be located at an upper portion of the rinse chamber and may have an opened lower portion. The opened lower portion of the drying chamber serves as a passage through which a semiconductor substrate (semiconductor wafer) rinsed from the rinsing chamber passes during the drying process. The interior of the drying chamber can provide a sufficient space for performing the drying process.

  In another embodiment, the drying chamber may include a gas supplier that supplies a purge gas to exhaust contaminated air in the drying chamber during a rinsing process or a wet cleaning process. The purge gas may include nitrogen gas, but is not limited thereto. The gas supplier may additionally supply a dry gas such as isopropyl alcohol IPA, which is a desiccant, during the drying process. The dry gas is not limited to isopropyl alcohol gas. For example, the dry gas may be an alcohol gas having a low molecular weight, a gas having a low surface tension, or a volatile gas.

  In another embodiment, the drying chamber may have first and second slits that respectively penetrate lower regions of both side walls thereof. In this case, the unit can move in the horizontal direction through the first and second slits.

  Further, the exhaust unit can move through the first and second slits while controlling the flow of fluid between the rinse chamber and the drying chamber.

  In another embodiment, the exhaust unit may include first and second doors designed to move through the first and second slits, respectively. The first and second doors may be similar to each other or may have different forms.

  Each of the first and second doors has a slit. The first door can move horizontally through the first slit, and the second door can move horizontally through the second slit.

  The slits housed in the first and second doors may be designed such that the rinse chamber and the drying chamber are partially or completely isolated from each other.

  The slits accommodated in the first and second doors can control the gas flow between the drying chamber and the rinse chamber. There are various embodiments for the specific form of the slit accommodated in the first and second doors.

  In another embodiment, the fluid flow control by the exhaust unit maintains a uniform distribution of the dry gas supplied onto the semiconductor wafer during the drying process. Therefore, according to the embodiment of the present invention, it is possible to reduce or remove the water spots referred to in the prior art.

  According to the present invention, the slit door type exhaust unit for sealing the drying chamber has various types of exhaust holes. Accordingly, the flow of the desiccant injected into the drying chamber can be easily controlled by optimizing the size and arrangement of the exhaust holes. Thereby, the drying efficiency of the semiconductor wafer loaded in the drying chamber can be improved.

  Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein, and may be embodied in other forms. Rather, the embodiments presented herein are provided so that the disclosed contents are thorough and complete, and are intended to fully convey the spirit of the invention to those skilled in the art. In the figure, the size of each component is exaggerated for clarity. Like reference numerals refer to like elements throughout the specification.

  The drying apparatus according to an embodiment of the present invention includes a first chamber 1 and a second chamber 3 as shown in FIG. The first chamber 1 can provide a space for a rinsing process or a cleaning process performed before moving the semiconductor wafer into the second chamber 3 shown in FIG.

  The first chamber 1 may include an opened upper region. In addition, the first chamber 1 may include first and second exhaust slits 1S ′ and 1S ″ penetrating the upper regions of both side walls thereof. For example, FIG. 3 shows one first exhaust slit 1S. Even if 'and one second exhaust slit 1S ″ are shown, the number of the first exhaust slit 1S ′ or the second exhaust slit 1S ″ may be at least two or more. .

  The second chamber 3 may include an opened lower region, and a semiconductor wafer (for example, a rinsed semiconductor wafer) in the first chamber 1 may be disposed in the second chamber 3 by the opened lower region. Is transferred to the inside. The opened lower region of the second chamber 3 may include a space for a robot arm or other corresponding wafer transfer means so that the semiconductor wafer can be easily dried. it can.

  The second chamber 3 supplies a purge gas for discharging a contaminated gas (for example, contaminated air) in the second chamber 3 during the rinsing process or the cleaning process. Can be included. The gas supplier 7 can supply a dry gas into the second chamber 3 during the drying process.

  The second chamber 3 may further include first and second slits S <b> 1 and S <b> 2 that pass through both side walls of the second chamber 3. Even if FIG. 3 shows one first slit S1 and one second slit S2, the number of the first slits S1 or the second slits S2 is at least two in total. Well, more.

  The exhaust unit 5 can be moved in a horizontal direction or a substantially horizontal direction by the first and second slits S1 and S2. As a result, the internal spaces of the first and second chambers 1 and 3 can be isolated or connected to each other depending on the position of the exhaust unit 5. The exhaust unit 5 includes a first slit door type exhaust unit 5a that moves in a horizontal direction or a substantially horizontal direction by the first slit S1, and a second slit S2. A second slit door type exhaust unit 5b that moves in a horizontal direction or a substantially horizontal direction can be provided.

  When the first and second slit door type exhaust units 5a and 5b are in contact with each other in the second chamber 3, the second chamber 3 is sealed. In this case, the air in the second chamber 3 is exhausted through a plurality of exhaust holes formed in the first and second slit door type exhaust units 5a and 5b.

  4A and 4B are a plan view and a cross-sectional view, respectively, showing the exhaust unit 5 according to one embodiment of the present invention. The exhaust unit 5 includes first and second slit door type exhaust units 5a and 5b. The first slit door type exhaust unit 5a includes a first body 11 'and a first exhaust pipe 11e'. The first body 11 ′ includes a first lower panel 11g ′, a first upper panel 11t ′, a first inner wall 11d ′, a first outer wall 11w ′, a first front wall 11f ′, and a first rear wall 11r ′. In addition, it is possible to provide the first internal space 11s ′ surrounded by these.

  The first upper panel 11t 'may include a first exhaust hole including first to third groups of exhaust holes 11a', 11b ', and 11c'. Even if the exhaust holes are shown in FIG. 4A and FIG. 4B as being divided into three groups, the number of the exhaust hole groups is not limited to this, and may be two, four, or even more. It may be divided into groups.

  The first body 11 'may be divided into a first central region R1', a first end region R3 ', and a first intermediate region R2'. Even if FIGS. 4A and 4B show one central region R1 ′, one end region R3 ′, and one intermediate region R2 ′, the central region R ′, the end region R3 ′, and the intermediate region R2 The number of 'may be two, or three or more.

  The first group of exhaust holes 11a ′ may have a first width W1, the second group of exhaust holes 11b ′ may have a second width W2, and the third group of exhaust holes 11c ′. May have a third width W3. The first to third groups of exhaust holes 11a ', 11b' and 11c 'may have the same length L. If the first width W1 is larger than the second and third widths W2 and W3 and the second width W2 is similar to the third width W3, the exhaust holes 11a ′ of the first group are The exhaust holes 11b ′ of the second group may be arranged at the same density (the same number of holes), and the exhaust holes 11c ′ of the third group are lower than the exhaust holes 11b ′ of the second group. They can be arranged in density (number of small holes).

  In contrast, the first width W1 may be greater than the second width W2, and the second width W2 may be greater than the third width W3. In this case, the exhaust holes 11a ', 11b', 11c 'of the first to third groups can all be arranged with the same density.

  The first to third groups of exhaust holes 11a ', 11b', and 11c 'may have the same size. In this case, the exhaust holes 11a ′ of the first group can be arranged at a higher density than the exhaust holes 11b ′ of the second group, and the exhaust holes 11c ′ of the third group are arranged more than the exhaust holes 11b ′ of the second group. Can be arranged at a low density.

  Note that the width, length, and / or density of the exhaust holes may be uniform in size and arrangement of the exhaust holes, unlike the above-described embodiment. That is, the size and arrangement of the exhaust holes can be optimized in various forms.

  The first to third exhaust holes 11a ', 11b', and 11c 'may have more various shapes, for example, a square shape, a circular shape, a rectangular shape, or other geometric shapes. Further, the first body 11 'is divided into other regions other than the first central region R1', the first end region R3 ', and the first intermediate region R2'.

  The second slit door type exhaust unit 5b may be the same as or different from the first slit door type exhaust unit 5a. The second slit door type exhaust unit 5b includes the elements 11 ′, 11a ′, 11b ′, 11c ′, 11d ′, 11e ′, 11f ′, 11g ′, 11r ′ of the first slit door type exhaust unit 5a, Elements 11 ″, 11a ″, 11b ″, 11c ″, 11d ″, 11e ″, 11f ″, 11g ″, 11r ″, 11s ″ corresponding to 11s ′, 11t ′, 11w ′, R1 ′, R2 ′, and R3 ′ , 11t ″, 11w ″, R1 ″, R2 ″ and R3 ″.

  5A, 5B and 5C are drawings showing an exhaust unit 5 according to another embodiment of the present invention. The exhaust unit 5 is also a variable slit door exhaust unit, and can include a first slit door exhaust unit 31a and a second slit door exhaust unit 31b inserted into the first slit door exhaust unit 31a. . The first and second slit door type exhaust units 31a and 31b may have a form similar to that of the first and second slit door type exhaust units 5a and 5b. For example, the first slit door type exhaust unit 31a may include a first body 33 'and a first exhaust pipe 33e'.

  The first body 33 'may include a first upper panel 33t', a first lower panel 33g ', a first front wall 33f', a first rear wall 33r ', and a first outer wall 33w'. The first upper panel 33t 'may include first to third groups of exhaust holes 33a', 33b ', and 33c' passing therethrough. The first body 33 'may have a first opening 33h' corresponding to the first outer wall 33w '.

  The second slit door type exhaust unit 31b may be the same as or different from the first slit door type exhaust unit 31a. The second slit door type exhaust unit 31b includes the elements 33 ′, 33a ′, 33b ′, 33c ′, 33e ′, 33f ′, 33g ′, 33h ′, 33r ′, 33t of the first slit door type exhaust unit 31a. Elements 33 ", 33a", 33b ", 33c", 33e ", 33f", 33g ", 33h", 33r ", 33t", 33w ", R1 corresponding to '33w', R1 ', R2' and R3 ' ", R2" and R3 "can be provided.

  The second opening 33h ″ may be smaller than the first opening 33h ′. The second chamber 3 passes through the first and second slits S1 and S2 of the second chamber 3, The first and second slit door type exhaust units 31a and 31b are sealed by bringing them into contact with each other. That is, the second opening 33h ″ will be described below with reference to FIGS. 5B and 5C. Can be inserted into the first opening 33h ′. On the contrary, the first opening 33h ′ may be inserted into the second opening 33h ″.

  Part of the exhaust holes 33a ', 33b', 33c 'of the first body 33' increases the overlapping area between the first and second slit door type exhaust units 31a, 31b to increase the second area. It overlaps with a part of the exhaust holes 33a ″, 33b ″, 33c ″ of the body 33 ″.

  For example, the first group exhaust holes 33a 'of the first body 33' may overlap the first group exhaust holes 33a "of the second body 33". In this case, the effective density of the exhaust holes of the superimposed first and second slit door type exhaust units 31a and 31b can be reduced, and the variable slit door including the first and second slit door type exhaust units 31a and 31b. The effective width of the mold exhaust unit can also be reduced. As a result, the variable slit door type exhaust unit is suitable for drying semiconductor wafers having various diameters (for example, smaller diameters).

  The diversity and / or combination described with reference to FIGS. 4A and 4B can also be applied to FIGS. 5A to 5C.

  6A to 6C are views showing an exhaust unit 5 according to still another embodiment of the present invention. The exhaust unit 5 may include first and second slit door type exhaust units 41a and 41b. The first and second slit door type exhaust units 41a and 41b are similar to the first and second slit door type exhaust units 5a and 5b or the first and second slit door type exhaust units 31a and 31b. Can have various forms. That is, the first slit door type exhaust unit 41a may include a first body 43 'and a first exhaust pipe 43e'. Similarly, the second slit door type exhaust unit 41b may include a second body 43 ″ and a second exhaust pipe 43e ″.

  The second slit door type exhaust unit 41b may be the same as or different from the first slit door type exhaust unit 41a. The second slit door type exhaust unit 41b includes the elements 43 ′, 43a ′, 43b ′, 43c ′ 43d ′, 43e ′, 43f ′, 43g ′, 43r ′, 43t ′ of the first slit door type exhaust unit 41a. , 43w ′, R1 ′, R2 ′ and R3 ′, the elements 43 ″, 43a ″, 43b ″, 43c ″, 43d ″, 43e ″, 43f ″, 43g ″, 43r ″, 43t ″, 43w ″, R1 ", R2" and R3 "can be provided.

  The first body 43 ′ includes a first upper panel 43t ′, a first lower panel 43g ′, a first front wall 43f ′, a first rear wall 43r ′, a first outer wall 43w ′, and a first inner wall 43d ′. Can have. The second body 43 ″ includes a second upper panel 43t ″, a second lower panel 43g ″, a second front wall 43f ″, a first rear wall 43r ″, a second outer wall 43w ″, and a second inner wall 43d ″. Can have.

  The first and second upper panels 43t ′ and 43t ″ may have first and second exhaust holes penetrating them, respectively. The first exhaust holes penetrate the first upper panel 43t ′. First to third groups of exhaust holes 43a ′, 43b ′, 43c ′ may be included, and the second exhaust holes may include first to third groups of exhaust holes 43a ″ passing through the second upper panel 43t ″. 43b ″ and 43c ″. The exhaust holes 43a ′, 43b ′, 43c ′, 43a ″, 43b ″ and 43c ″ of the first to third groups all have the same width (W). be able to.

  The first length L1 of the exhaust holes 43a ′ and 43a ″ of the first group may be larger than the second length L2 of the exhaust holes 43b ′ and 43b ″ of the second group. The third length L3 of the holes 43c ′ and 43c ″ may be smaller than the second length L2 of the exhaust holes 43b ′ and 43b ″ of the second group. The first body 43 ′ may include a first auxiliary panel 45 ′, and the first auxiliary panel 45 ′ may be moved (sliding) horizontally along the surface of the first upper panel 43t ′. The opening areas of the exhaust holes 43a ′, 43b ′, 43c ′ of the first body 43 ′ can be varied.

  The second body 43 ″ is also moved (sliding) horizontally along the surface of the second upper panel 43t ″, thereby opening the exhaust holes 43a ″, 43b ″, 43c ″ of the second body 43 ″. A second auxiliary panel 45 ″ can be provided.

  The first auxiliary panel 45 ′ may include first to third groups of auxiliary exhaust holes 45a ′, 45b ′, 45c ′, and the first to third groups of auxiliary exhaust holes 45a ′, 45b ′, 45c ′ may have the same size and / or the same arrangement as the exhaust holes 43a ′, 43b ′, 43c ′ of the first to third groups. The second auxiliary panel 45 ″ has the same size and / or the same arrangement as the first to third groups of exhaust holes 43a ″, 43b ″, 43c ″. 45a ″, 45b ″, 45c ″. The auxiliary exhaust holes 45a ′, 45a ″, 45b ′, 45b ″, 45c ′, 45c ″ of the first to third groups should be included in FIG. 6A and FIG. 6B, by adjusting the positions of the first and second auxiliary panels 45 ′ and 45 ″, the first to third groups of exhaust holes 43a ′, 43a ″, 43b ′, 43b ″, When completely overlapped with 43c ′ and 43c ″, the exhaust holes of the first and second slit door type exhaust units 41a and 41b may have the largest opening area. That.

  The diversity and / or combination described with reference to FIGS. 4A, 4B, 5A, 5B, and 5C is also applicable to the embodiments shown in FIGS. 6A to 6C.

  Referring to FIG. 6C, after the first chamber 3 shown in FIG. 3 is sealed by bringing the first and second slit door type exhaust units 41a and 41b into contact with each other, the first to third groups. The opening areas of the exhaust holes 43a ', 43a ", 43b', 43b", 43c ', 43c "move the first and second auxiliary panels 45', 45" close to each other or far from each other in the horizontal direction. Can be changed.

  When the first and second auxiliary panels 45 ′ and 45 ″ move toward the first and second inner side walls 43d ′ and 43d ″ by about half the width (W), respectively, the density of the exhaust holes is increased. Without change, the opening area of all the exhaust holes is reduced by about 1/2. As a result, the exhaust capacity of the variable slit door type exhaust unit can be controlled by moving the first and second auxiliary panels 45 ′ and 45 ″. Thereafter, it can be used to change the pressure in the second chamber.

  When the dry gas (for example, 27 in FIG. 8) injected into the second chamber 3 reaches normal temperature or lower, the pressure in the second chamber 3 is preferably low. This is because if the temperature of the drying gas is low and the pressure in the second chamber 3 is high, the drying gas is condensed and the drying efficiency in the second chamber 3 is reduced. Accordingly, when the temperature of the drying gas is low and the pressure of the second chamber 3 is high, the pressure in the second chamber 3 is lowered using the first and second auxiliary panels 45 ′ and 45 ″. That is, it is preferable to increase the opening area of the exhaust hole using the first and second auxiliary panels 45 ′ and 45 ″.

  FIG. 7 is a cross-sectional view showing a rinsing / drying apparatus for explaining a rinsing method according to another embodiment of the present invention. A rinsing solution, for example, deionized water 21 is supplied into the first chamber 1, and the semiconductor wafer 23 is immersed in the deionized water 21 to be rinsed. The rinsing process may include overflowing the first chamber 1 using the deionized water 21.

  The humidity in the second chamber 3 can be maintained uniformly by injecting a purge gas 25 such as a nitrogen-based gas into the second chamber 3. The contaminated air in the chamber 3 can be discharged. The purge gas 25 can be injected by the gas supply unit 7 in the second chamber 3. The gas supplier 7 may include a gas inlet pipe 7 a for supplying a gas such as the purge gas 25 into the second chamber 3. During the rinsing process, the first and second slit door type exhaust units 5a and 5b, 31a and 31b, or 41a and 41b are formed in both side walls of the second chamber 3, respectively. It can be located in the slits S1, S2. The first and second slit door type exhaust units 5a and 5b, 31a and 31b, or 41a and 41b may be arranged to face the first inner wall 11d 'and the second inner wall 11d ", respectively.

  During the rinsing process, the first and second slit door type exhaust units 5a and 5b may be spaced apart from each other so as to maintain a necessary interval therebetween. In this case, the purge gas 25 injected into the second chamber 3 can be exhausted through the first and second exhaust slits 1S ′ and 1S ″ formed in the side wall of the first chamber 1. During the process, the first and second slit door type exhaust units 5a and 5b move in the horizontal direction so as to be close to or in contact with each other. When in contact with each other, the second chamber 3 can be sealed, and in this case, the purge gas 25 injected into the second chamber 3 is supplied to the exhaust holes 11a of the first and second slit door type exhaust units 5a and 5b. It can be discharged through ', 11a ", 11b', 11b", 11c ', 11c ".

  Meanwhile, the first chamber 1 may serve as a bath for performing a cleaning process instead of the rinsing process. In this case, a hydrofluoric acid solution may be used as the cleaning liquid for the cleaning process.

  If the first and second slit door type exhaust units 5a and 5b come into contact with each other during the rinsing process and the second chamber 3 is sealed, the purge gas 25 may not be supplied any more.

  As shown in FIG. 8, after the rinsing process is completed, the rinsed wafer 23 is raised or moved into the second chamber 3. When the rinsing process is completed and the second chamber 3 is sealed by the first and second slit door type exhaust units 5a and 5b before the rinsed wafer 23 is lifted, the rinsed wafer 23 moving paths can be provided by isolating the first and second slit door type exhaust units 5a and 5b from each other. While the semiconductor wafer 23 is rinsed, the purge gas 25 can be continuously supplied.

  After the rinsed wafer 23 is lifted into the second chamber 3, the first and second slit door type exhaust units 5a and 5b can move in the horizontal direction and come into contact with each other. That is, the opened lower region of the second chamber 3 is closed by the first and second slit door type exhaust units 5a and 5b. The dry gas 27 can be injected by the gas supplier 7. The dry gas 27 is also a volatile gas that can replace the deionized water by an interaction with the deionized water. Examples of the dry gas 27 include ethyl glycol, 1-propanol, 2-propanol, tetrahydrofurane, and 4-hydroxy-4-methyl-2- Pentamonyl (4-hydroxy-4-methyl-2-pentamone), 1-butanol (1-butanol), 2-butanol (2-butanol), methanol (ethanol), ethanol (ethanol), isopropyl alcohol (isopropyl alcohol), From acetone, n-propyl alcohol and dimethyl ether. Any one of a group.

  In contrast, the dry gas 27 can be supplied together with a carrier gas. In this case, the dry gas 27 is ethyl glycol, 1-propanol, 2-propanol, tetrahydrofurane, 4-hydroxy-4-methyl-2, or the like. -Pentamon (4-hydroxy-2-methyl-2-pentamone), 1-butanol (1-butanol), 2-butanol (2-butanol), methanol (ethanol), ethanol (ethanol), isopropyl alcohol (isopropyl alcohol) , Acetone, n-propyl alcohol and dimethyl ether It is also a mixed gas of any one of the group and the carrier gas. The carrier gas is also nitrogen gas.

  The carrier gas may have a normal temperature or a temperature higher than the normal temperature. When the carrier gas has a temperature higher than normal temperature, the dry gas 27 can also have a temperature higher than normal temperature. For example, when the dry gas 27 is a mixed gas of normal temperature isopropyl alcohol gas and high-temperature nitrogen gas higher than normal temperature, the isopropyl alcohol gas can also have a high temperature.

  As shown in FIG. 8, the dry gas 27 is injected into the second chamber 3 and the exhaust holes 11a ′, 11a ″, 11b of the first and second slit door type exhaust units 5a, 5b. ', 11b ", 11c', 11c" can be discharged. The first group of exhaust holes 11a ', 11a "have the largest number in the area adjacent to the inner walls 11d', 11d" and In such an arrangement, the flow density of the drying gas 27 may be set to the inner walls 11d ′ and 11d as shown in FIG. "On the first group of exhaust holes 11a ', 11a" adjacent to ". As a result, the dry gas passing over the lower surface B of the semiconductor wafer 23 is the highest. 27 flows uniformly along a direction parallel to the contour of the peripheral edge of the semiconductor wafer 23 (contour; the shape of the round peripheral edge in the example of FIG. 8), so that water spots are formed on the surface of the semiconductor wafer 23. The present invention is not limited to the above-described embodiment, and can be modified in various forms within the concept of the present invention.For example, in the above-described embodiment, the drying process of the semiconductor wafer is performed. As described above, the present invention is not limited to cleaning and drying of such semiconductor wafers, but various wafers and substrates used in the semiconductor device manufacturing process, such as glass wafers (substrates) and ruby wafers (substrates). Furthermore, the present invention can be applied to the drying process, and is not limited to the manufacturing of semiconductor devices such as liquid crystal display devices and plasma display devices. Can be applied.

It is a schematic sectional drawing which shows the rinse chamber and drying chamber of the conventional apparatus. It is a top view which shows the water marks (water marks) formed on the semiconductor wafer dried using the conventional apparatus. It is a schematic perspective view which shows the drying apparatus which concerns on embodiment of this invention. It is a top view which shows the exhaust unit which concerns on embodiment of this invention. FIG. 4B is a cross-sectional view taken along section line II in FIG. 4A. It is a top view which shows the exhaust unit which concerns on other embodiment of this invention. It is sectional drawing shown along the cutting line II-II of FIG. 5A. FIG. 5B is another cross-sectional view of the exhaust unit shown in FIG. 5A. It is a top view which shows the exhaust unit which concerns on other embodiment of this invention. It is sectional drawing shown along the cutting line III-III of FIG. 6A. FIG. 6B is another cross-sectional view of the exhaust unit shown in FIG. 6A. It is sectional drawing of the rinse / drying apparatus explaining the rinse method which concerns on embodiment of this invention. It is sectional drawing of the rinse / drying apparatus explaining the drying method which concerns on embodiment of this invention.

Explanation of symbols

1 ... first chamber,
3 ... second chamber,
5 ... exhaust unit,
7 ... Gas supply machine,
11a ', 11b', 11c '... exhaust holes,
21 ... deionized water,
23 ... Semiconductor wafer,
25 ... Purge gas,
27 ... dry gas,
R1 ... central region,
R2 ... middle region,
R3 ... end region,
S1 ... 1st slit,
S2 ... second slit,
W1 ... 1st width,
W2 ... second width,
W3 ... Third width.

Claims (20)

A drying chamber for supplying a desiccant to dry the substrate;
In order to uniformly dry the substrate, it includes a plurality of exhaust holes that determine the flow rate and distribution of the desiccant, and controls the flow of the desiccant so that the desiccant flows more in the central region than at the edges. and an exhaust unit, only including,
The drying device includes at least two exhaust parts that interact to change the flow of the drying material flowing through the plurality of exhaust holes . It said at least two exhaust components, drying apparatus according to claim 1, characterized that you interact to provide a greater exhaust hole in the central area of the exhaust unit from an end of the exhaust unit. The drying apparatus according to claim 1, wherein the at least two exhaust parts interact to supply more exhaust holes that are larger in the central region of the exhaust unit than at the end of the exhaust unit. . The drying apparatus according to claim 3 , wherein the at least two exhaust parts are associated with each other and slide . The drying apparatus according to claim 4 , wherein one of the at least two exhaust parts is larger than the other one . The at least two one exhaust component of the exhaust component is smaller than the other, and one of the exhaust components drying apparatus according to claim 4, characterized in Rukoto is inserted into the other exhaust components. A drying chamber for supplying a desiccant to dry the substrate;
In order to uniformly dry the substrate, it includes a plurality of exhaust holes that determine the flow rate and distribution of the desiccant, and controls the flow of the desiccant so that the desiccant flows more in the central region than at the edges. An exhaust unit, the exhaust unit comprising at least two exhaust components and at least two auxiliary components that interact to change the flow of the desiccant flowing through the plurality of exhaust holes. And drying equipment. The drying apparatus according to claim 7, wherein the at least two exhaust parts and the at least two auxiliary parts supply more exhaust holes in a central region of the exhaust unit than ends of the exhaust unit . The drying apparatus according to claim 7 , wherein the at least two exhaust parts and the at least two auxiliary parts supply a larger exhaust hole in a central region of the exhaust unit than an end of the exhaust unit . It said at least two exhaust component and said at least two auxiliary parts, according to claim 7, wherein greater in the central region of the exhaust unit of the end of the exhaust unit, characterized that you supply a greater discharge hole Drying equipment. Said at least two exhaust component and said at least two auxiliary parts together have relevancy, drying apparatus according to claim 10, characterized that you sliding movement. The exhaust unit, the drying apparatus according to any one of claims 1 to 11, characterized in Rukoto is inserted into the drying chamber of the slit. Drying apparatus according to any one of claims 1 to 12, further comprising a cleaning chamber containing the cleaning material to be cleaned the substrate. The cleaning material is drying apparatus according to claim 13, wherein the hydrofluoric acid solution der Rukoto. The drying apparatus according to claim 13 , wherein the cleaning chamber is used as a rinsing chamber for storing a rinsing material for rinsing the substrate . The rinse material, drying apparatus according to claim 15, wherein the deionized water der Rukoto. The drying material is according to any one of claims 1 to 16 or a substance having an alcohol or low surface tension, has a low molecular weight, or characterized volatiles der Rukoto Drying equipment. The drying material is drying apparatus according to any one of claims 1-16, characterized in isopropyl alcohol gas der Rukoto. In a method of drying a substrate,
Supplying a desiccant for drying the substrate;
Using an exhaust unit comprising at least one exhaust part having a plurality of exhaust holes for determining the flow rate and distribution of the desiccant to uniformly dry the substrate, more in the central region than the end of the exhaust unit Controlling the flow of the desiccant to flow,
The drying method is characterized in that the flow of the desiccant is controlled using at least two exhaust parts that interact to change the flow rate of the desiccant flowing through the plurality of exhaust holes. In a method of drying a substrate,
Supplying a desiccant for drying the substrate;
Using an exhaust unit comprising at least one exhaust part having a plurality of exhaust holes for determining the flow rate and distribution of the desiccant to uniformly dry the substrate, more in the central region than the end of the exhaust unit Controlling the flow of the desiccant to flow,
The desiccant flow is controlled using at least two exhaust components and at least two auxiliary components that interact to vary the flow rate of the desiccant flowing through the plurality of exhaust holes. Drying method.

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