JPH10154689A - Cleaning device and cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect a processed substrate against an adverse effect caused by chemical liquid processing by a method wherein the substrate is immersed into processing liquid kept in a processing tank, and a drying chamber provided with a closable opening through which the processed substrate is transferred is disposed over the processing bath and filled with organic solvent atmosphere. SOLUTION: A cleaning device is equipped with a cleaning tank 41 serving as a processing bath filled with processing liquid where a wafer W is dipped as a processed substrate and a drying chamber 42 which is disposed above the cleaning bath 42 to dry up the wafer W transferred from the cleaning bath 41. The cleaning bath 41 houses the wafer W and wafer guides 43 which hold the wafer W. Nozzles 44 and 45 which spray processing liquid on the wafer W housed in the cleaning bath 41 are provided on the peripheral edge of the base of the cleaning bath 41. Nozzles 85 and 86 spout out nitrogen gas to replace the atmosphere of the drying chamber 42 with nitrogen, and then gas containing IPA is spouted out from the nozzles 85 and 86 to fill the drying the chamber 42 previously with an IPA atmosphere. By this setup, chemical liquid can be prevented from diffusing into the surrounding space.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and a cleaning method for immersing a substrate to be processed, such as a semiconductor wafer or a glass substrate for an LCD, in a chemical solution or a rinsing liquid and drying the substrate.

[0002]

2. Description of the Related Art For example, a description will be given of a cleaning process in a process of manufacturing a semiconductor device such as an LSI. A cleaning device is used to remove
Among them, a wet cleaning apparatus is widely used because it can effectively remove the above-mentioned contamination, can perform batch processing, and has good throughput.

In such a wet cleaning apparatus, a wafer to be cleaned is subjected to a chemical liquid cleaning treatment such as an ammonia treatment, a hydrofluoric acid treatment, a sulfuric acid treatment, a water washing treatment with pure water or the like, and an isopropyl alcohol (hereinafter referred to as “IPA”). ) Is performed, for example, and a chemical solution, pure water, and IPA are supplied to a processing tank and a drying chamber arranged in the processing order, for example, in units of 50 sheets. A batch processing method in which wafers are sequentially immersed in a processing tank and dried is widely used.

However, providing a processing tank or a drying chamber for each processing increases the size of the apparatus, and moreover, there are many opportunities to transfer the wafer, that is, to expose the wafer to the atmosphere, so that there is a high possibility that particles will adhere. .

[0005] For this reason, Japanese Patent Application Laid-Open Nos. 64-81230 and 6-326073 disclose a cleaning apparatus in which a treatment tank and a drying chamber are integrated to perform a chemical solution treatment and a drying treatment in the same chamber. Has been advocated. In brief, as shown in FIG. 30, these cleaning apparatuses store a chemical solution 202 and the like in a lower portion 201 of a chamber 200 and immerse the wafer W, then pull up the wafer W, and dry the wafer W with an IPA and the like in an upper portion 203 of the chamber 200. The processing is performed.

[0006]

However, in the cleaning apparatus having the above-mentioned structure, the atmosphere of the chemical solution remains in the upper portion of the chamber during the drying process, which may adversely affect the wafer W. Since it is necessary to simultaneously satisfy the required specifications of the drying process, the degree of freedom of design is limited, and it is difficult to incorporate various measures for speeding up the cleaning process and reducing the size of the chamber. is there. Further, in the above-described drying treatment using IPA or the like, decompression using a vacuum pump or the like is usually performed in parallel. Since it is necessary to make the volume large to some extent, there is a problem that it is necessary to increase the thickness of the chamber to increase the pressure resistance, and that a vacuum pump having a large power is required.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a cleaning apparatus and a cleaning method that are not adversely affected by a chemical solution during drying. SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning apparatus and a cleaning method which have a high degree of freedom in design, can speed up a cleaning process, and can further reduce the size of the apparatus.

It is a further object of the present invention to provide a cleaning apparatus and a cleaning method capable of reducing the volume of a chamber or the like and reducing the thickness of the chamber or the like and reducing the output of a vacuum pump or the like.

Still another object of the present invention is to provide a cleaning apparatus and a cleaning method capable of performing a drying process more efficiently.

Another object of the present invention is to provide a cleaning apparatus capable of preventing the surface of a substrate to be processed from being oxidized.

Another object of the present invention is to provide a cleaning apparatus which separates a processing tank portion from a drying chamber, thereby preventing mist or the like of a processing solution from entering the drying chamber and obtaining stable drying performance. It is to provide a cleaning method.

[0012]

In order to achieve the above object, according to the present invention, a processing tank for storing a processing liquid, and a substrate to be processed is immersed in the stored processing liquid, and an upper part of the processing tank. And a drying chamber provided with an openable and closable opening for transferring a substrate to be processed between the processing tank and the processing tank. A cleaning apparatus is provided, comprising: a transfer unit for transferring a substrate; and a unit for setting an atmosphere of an organic solvent in the drying chamber.

In this case, the apparatus may further comprise means for sealing the drying chamber when the opening is closed.

According to a third aspect of the present invention, a processing tank for storing a processing liquid and a substrate to be processed is immersed in the stored processing liquid, and a processing liquid is disposed between the processing tank and the processing tank. A drying chamber provided with an opening for transferring the substrate, a holding member for supporting the substrate to be processed while supporting the drying chamber, and a processing chamber and the drying chamber through the opening. Transfer means for transferring the holding member between the first opening and closing means for opening and closing the opening, and closing the drying chamber when closed,
A second opening / closing means for opening and closing the opening, and closing the opening so as to have a gap for supporting the holding member from the drying chamber side in the processing tank when the opening is closed; Cleaning means provided with a means for creating an atmosphere.

According to a fourth aspect of the present invention, a processing tank for storing a processing liquid and a substrate to be processed is immersed in the stored processing liquid, and the processing liquid is disposed between the processing tank and the processing tank. A drying chamber provided with an opening for transferring the substrate, a holding member for supporting the substrate to be processed while supporting the drying chamber, and a processing chamber and the drying chamber through the opening. Transfer means for transferring the holding member, a first mode for opening and closing the opening and closing the drying chamber when closed, and supporting the holding member from the drying chamber side in the processing tank when closed. And a second mode for closing the opening so as to have a gap for the cleaning chamber, and means for setting the drying chamber to an atmosphere of an organic solvent. .

In the above-mentioned cleaning apparatus, the processing liquid in the processing tank may be a degassed rinsing liquid, and the cleaning liquid may be disposed between the processing tank and the drying chamber. A means for blowing an inert gas onto the substrate to be processed transferred from the processing tank to the drying chamber may be further provided. In this case, a cooling means for cooling the inert gas may be further provided.

In the above-mentioned cleaning apparatus, a means for reducing the pressure in the drying chamber and a means for blowing an inert gas to the substrate to be processed in the drying chamber may be provided. In the above-mentioned cleaning apparatus, a heating means disposed in the drying chamber may be further provided.

In the above cleaning apparatus, the processing liquid stored in the processing tank may be a cooled rinsing liquid.

According to the eleventh aspect, (a) the substrate to be processed is held by the holding member supported from the drying chamber side, and is transferred to the processing tank provided below the opening through the opening of the drying chamber. (B) closing the opening;
(C) storing a processing liquid in the processing tank before or after the transfer, and immersing the processing target substrate; and (d) opening the opening, and transferring the processing target substrate from the processing tank to the drying chamber. Transferring; and (e) closing the opening.
(F) drying the substrate to be processed in an atmosphere of an organic solvent.

In the above-described cleaning method, a step of blowing an inert gas may be further provided before the step (b).

In the above cleaning method, an inert gas may be supplied to the processing tank in the steps (a) to (f).

In the above-mentioned cleaning method, a gas containing an organic solvent may be supplied to the treatment tank before the step (d).

In the above cleaning method, a gas containing an organic solvent may be supplied to the processing tank during the step (d).

In the above-described cleaning method, the method may further include a step of blowing an inert gas onto the substrate to be processed transferred from the processing tank to the drying chamber.

In the above-mentioned cleaning method, the pressure in the drying chamber may be reduced after the step (f).
The method may further include a step of blowing an inert gas onto the substrate to be processed in the drying chamber.

In the above-described cleaning method, the method may further include a step of previously setting the drying chamber to an atmosphere of an organic solvent between the steps (b) and (d).

In the above-mentioned cleaning method, the processing liquid stored in the processing tank may be a cooled rinsing liquid.

In the above-mentioned cleaning method, the step of closing the opening after transferring the substrate to be processed from the drying chamber to the processing tank is preferably for supporting the holding member from the drying chamber side. It may be a step of closing while providing a gap.

In the above cleaning method, the step of closing the opening after transferring the substrate to be processed from the processing tank to the drying chamber may be a step of sealing the opening. .

According to the first aspect, the drying chamber and the processing tank are vertically separated from each other, and the space of the drying chamber and the space of the processing tank can be shielded by the openable and closable opening. In this case, there is no adverse effect of the chemical treatment. In addition, since the drying chamber and the processing tank can be designed under different conditions, the degree of freedom of design is high,
It is possible to increase the speed of the cleaning process and further downsize the apparatus. Furthermore, since the volume in the drying chamber can be reduced, the pressure in the drying chamber and the processing tank can be reduced in a case where the pressure in the drying chamber is reduced while the atmosphere in the drying chamber is an organic solvent atmosphere. The output of a vacuum pump or the like used for the purpose can be reduced.

According to the second to fourth aspects, the inside of the drying chamber can be further sealed, so that the thickness of the drying chamber can be further reduced, and a vacuum pump or the like used for reducing the pressure can be used. Further lower output can be achieved.

According to the fifth aspect, since the processing liquid in the processing tank is a degassed rinsing liquid, it is possible to prevent the formation of an oxide film on the substrate to be processed.

According to the sixth aspect, the means for blowing the inert gas to the substrate to be processed transferred from the processing tank to the drying chamber assists in drying the substrate to be processed. Processing can be performed. Further, when the inert gas is cooled as in claim 7, it is possible to promote the condensation by the organic solvent in the drying chamber.

According to the eighth aspect, since the inert gas is blown onto the substrate to be processed in the drying chamber while the pressure in the drying chamber is reduced, the drying process can be performed more efficiently. According to the ninth aspect, the drying chamber can be heated to a higher temperature by the panel heater, so that the drying process can be performed more efficiently.

According to the tenth aspect, since the cooled rinsing liquid is used, the condensation by the organic solvent in the drying chamber can be promoted.

According to the eleventh aspect, the substrate to be processed is transported from the processing tank to the drying chamber, the opening is closed to shield the space, and then the drying processing is performed. There is no adverse effect. In addition, preparations for processing in the next processing tank at the time of drying processing can be made, and throughput can be improved. In addition, since the drying chamber and the processing tank can be designed under different conditions,
The degree of freedom in design is high, and the speed of the cleaning process and the size of the apparatus can be further reduced. Furthermore, since the volume in the drying chamber can be reduced, the pressure in the drying chamber and the processing tank can be reduced in a case where the pressure in the drying chamber is reduced while the atmosphere in the drying chamber is an organic solvent atmosphere. The output of a vacuum pump or the like used for the purpose can be reduced.

According to the twelfth aspect, before the step (b), after the substrate to be processed is transferred from the outside of the cleaning device to the drying chamber, the drying chamber is filled with an inert gas. There is no adverse effect of the chemical treatment during the drying treatment.

According to the thirteenth aspect, in the steps (a) to (f), an inert gas is supplied to the treatment tank, so that there is no adverse effect of the chemical treatment during the drying treatment.

According to the fourteenth or fifteenth aspect, the upper portion of the processing tank is already in the atmosphere of the organic solvent before the substrate to be processed is transferred to the drying chamber. Can be performed more efficiently.

According to the sixteenth aspect, the method further includes a step of blowing an inert gas onto the substrate to be processed transferred from the processing tank to the drying chamber, so that the drying processing can be performed more efficiently.

According to the seventeenth aspect, after the step (f), the method further comprises the step of blowing an inert gas onto the substrate to be processed in the drying chamber while reducing the pressure in the drying chamber. The drying process can be performed more efficiently.

According to the eighteenth aspect, between the step (b) and the step (d), the method further comprises a step of previously setting the drying chamber to an atmosphere of an organic solvent. As a result, the drying process can be performed more efficiently.

According to the nineteenth aspect, since the processing liquid stored in the processing tank is a cooled rinsing liquid, condensation by the organic solvent in the drying chamber can be promoted.

According to the twentieth aspect, the step of closing the opening after transferring the substrate to be processed from the drying chamber to the processing tank has a gap for supporting the holding member from the drying chamber side. The cleaning process can be performed while the holding member is kept in the processing tank, so that the speed of the cleaning process can be increased.

According to the twenty-first aspect, the step of closing the opening after transferring the substrate to be processed from the processing tank to the drying chamber is a step of closing the opening. As a result, the mist of the treatment liquid is prevented from entering the drying chamber, so that the drying treatment is not adversely affected by the chemical treatment.

[0046]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. This embodiment is an example applied to a semiconductor wafer (hereinafter, referred to as "wafer") cleaning apparatus. The cleaning apparatus will be described. As shown in FIGS. 1 and 2, the cleaning apparatus 1 as a whole performs a loading section 2 for accommodating a wafer before cleaning in a carrier unit and a wafer cleaning process. The cleaning unit 3 includes a cleaning processing unit 3 and an unloading unit 4 for taking out wafers after the cleaning processing in cassette units.

The carry-in section 2 has a standby section 6 for holding a carrier 5 containing a predetermined number of wafers before cleaning processing, for example, 25, and taking out wafers from the carrier 5.
A loader unit 7 for aligning the orientation flat and detecting a single wafer is provided. Further, the carrier 5 carried from outside by a transfer robot or the like is transported to the standby unit 6, and the standby unit 6 and the loader unit 7 A transfer arm 8 for transferring the carrier 5 is provided therebetween.

The cleaning section 3 has a front side (FIG. 1).
, Three wafer transfer devices 11, 12,
In addition, a tank 13 for storing a processing liquid such as a chemical solution and a piping area 14 for storing various piping groups are formed on the back side thereof through a partition wall.

On the other hand, an unloader section 15 for storing the wafers cleaned by the cleaning section 3 in the carrier 5 and a standby section 16 for holding the carrier 5 containing the wafers after the cleaning processing are provided in the unloading section 4. , Unloader unit 15 and standby unit 1
6, a transfer arm 17 for transferring the carrier 5 is provided.

The cleaning apparatus 1 is provided with a carrier transport section 18 for transporting the emptied carrier 5 in the carry-in section 2 to the carry-out section 4. The carrier transport unit 18 includes a carrier conveyor 19 provided above the cleaning unit 3,
In the loading section 2, the carrier arm 8 receives the empty carrier 5 from the loader section 7 by the transport arm 8 and stores the carrier with wafers therein and the carrier without wafers therein, and the transport section 17 from the carrier conveyor 19 in the unloading section 4. And a carrier transfer section (not shown) for receiving the empty carrier 5 and transferring it to the unloader section 15.

The cleaning section 3 cleans the wafer chuck 21 of the wafer transfer device 11 in order from the loader section 7 side.
A chuck cleaning / drying processing tank 22 for drying, a chemical cleaning processing tank for cleaning impurities such as organic contaminants, metal impurities, and particles on the wafer surface with a chemical solution, for example, a mixed solution of NH ₄ OH / H ₂ O ₂ / H ₂ O. 23, chemical cleaning tank 2
A washing and cleaning treatment tank 24 for washing the wafer washed in 3 with pure water, for example, a chemical solution for removing metal contamination on the wafer surface,
For example, a chemical cleaning tank 25 for cleaning with an HCl / H ₂ O ₂ / H ₂ O mixture, a water cleaning cleaning tank 26 for cleaning the wafers cleaned in the chemical cleaning tank 25 with pure water, for example, and oxidation of the wafer surface A chemical solution such as HF
The cleaning apparatus 27 and the wafer transfer apparatus 13 according to the present invention, which perform the cleaning process with the / H ₂ O mixed solution, clean the washed wafer with a rinsing liquid, for example, pure water, and further perform the drying process on the rinsed wafer. Cleaning / drying processing tanks 28 for cleaning and drying the wafer chuck (not shown). In addition, between the loader unit 7 and the chuck cleaning / drying processing tank 22, between the water cleaning / cleaning processing tank 24 and the chemical liquid cleaning processing tank 25, and between the water washing / cleaning processing tank 26.
Cleaning / drying processing tank 28 between
Partition plates 29, 30, 31, and 32 are provided between the unloader unit 15 and the unloader unit 15. The partition plates 29, 30, 31, and 32 are opened and closed by a drive mechanism (not shown), for example, at the time of wafer transfer. Thereby, diffusion of the atmosphere of the chemical solution into the adjacent space can be prevented.

The structure of the cleaning device 27 according to the present invention is shown in FIGS.
Referring to FIG. 13, the cleaning device 27 stores a processing solution, for example, a chemical solution such as an HF / H ₂ O mixture or a rinsing solution such as pure water, and stores the wafer as a substrate to be processed in the stored processing solution. A cleaning tank 41 as a processing tank in which W is immersed, and a cylindrical drying chamber 42 disposed above the cleaning tank 41 and performing a drying process on the wafer W transferred from the cleaning tank 41 are provided.

The cleaning tank 41 accommodates, for example, 50 wafers W held by the wafer guide 43 together with a wafer guide 43 described later. On both sides of the bottom of the cleaning tank 41,
Nozzle 4 for injecting the processing liquid toward each accommodated wafer W
4 and 45 are provided. The nozzles 44 and 45
Can be constituted by pipes having ejection holes provided at the same pitch as the interval between adjacent wafers W, for example, along the arrangement direction of the wafers W. Nozzle 4
4 and 45 are provided by switching the switching valve 46 in FIGS.
One of a chemical solution such as a HF / H ₂ O mixed solution and a rinsing solution such as pure water (DIW: deionized water) is supplied from a piping region 14 shown in FIG. The switching control of the switching valve 46 is performed at a predetermined timing by, for example, a control unit (not shown). The rinsing liquid is wafer W
It is better to use degassed DIW in order to prevent oxidation.

A recovery tank 47 is provided around the cleaning tank 41 for collecting the processing liquid overflowing from the cleaning tank 41. The processing liquid recovered in the recovery tank 47 is circulated to the nozzles 44 and 45 via the switching valve 48, the pump 49, the filter 50, and the switching valve 51. The switching valve 48 switches between circulating or discharging the processing liquid recovered in the recovery tank 47 as described above. The switching valve 51 is
It is switched between circulating the processing liquid recovered in the recovery tank 47 as described above or supplying DIW cooled to a temperature of 0 ° C. to normal temperature, more preferably about 5 ° C. to the nozzles 44 and 45 by the cooler 55. Note that a damper 52 is provided between the pump 49 and the filter 50. A discharge port 53 for discharging the processing liquid is provided at the lowermost part of the cleaning tank 41, and whether or not the processing liquid is discharged from the discharge port 53 is switched by a switching valve 54.

On the other hand, rectangular openings 61 and 62 for transferring wafers W are provided in the upper and lower portions of the drying chamber 42, respectively. Are provided, and a rotating door mechanism 60 and a sliding door mechanism 64 are provided in the lower opening 62.

The lid 63 is made of PVC (polyvinyl chloride) or PP
(Polypropylene) or the like, and has a shape obtained by cutting a cylinder in the vertical direction both inside and outside as shown in FIG.
Thereby, the inside of the drying chamber 42 closed by the lid 63 is formed in a cylindrical shape, and a turbulent flow of nitrogen gas or the like blown to the wafers W described later is prevented, and the wafers W are uniformly distributed. Nitrogen gas or the like is blown. As shown in FIG. 6, an O-ring 65 is arranged along the periphery of the opening 61, and further, on both sides of the opening 61, a lid fixing mechanism 59 for fixing and pressing the lid 63 covering the opening 61 is provided. The sealing property when the opening 61 is closed with the lid 63 is enhanced. At two positions of the rod 56 rotatably arranged, there are provided joining plates 57 joined to the lid 63 covering the opening 61, and the joining plate 57 is rotated by rotating the rod 56 by the rotation driving unit 58. The cover 63 is joined to the cover 63 so that the cover 63 is pressed.

In the vicinity of the drying chamber 42, a lid driving section 66 for driving the lid 63 to open and close is provided. Lid drive unit 6
As shown in FIG. 7, 6 includes a cylinder 68 that rotationally drives a rotary arm 67 that fixes the lid 63 to the tip, and a cylinder 69 that moves the lid 63 and these rotating mechanisms up and down. The lid driving unit 66 first moves the lid 63 closing the opening 61 upward (FIG. 7), and rotates the rear lid 63 to a position outside the opening 61 (FIG. 7).
3 is moved downward (FIG. 7). Opening 61 with lid 63
The reverse operation is performed when closing with (see FIG. 7 →→).
).

The revolving door mechanism 60 includes a pair of revolving doors 59a rotatably arranged as shown in FIG.
And a rotation driving section 59b for driving the rotation. Each rotating door 59a is provided with a notch 59c so that a gap for passing a support member 74 (described later) of the wafer guide 43 holding the wafer W in the cleaning tank 41 in a closed state is formed. I have. The revolving door 59a is made of a resin such as PVC (polyvinyl chloride) or PP (polypropylene), like the lid 63.

As shown in FIG. 9, the sliding door mechanism 64 has a rectangular flange 70 disposed between the cleaning tank 41 and the drying chamber 42 and a flange 70 which is inserted and withdrawn through an opening 71 provided in the flange 70. Sliding door 72 that opens and closes inside
And a cylinder 73 for driving the slide door 72 to be inserted and withdrawn. The slide door 72 is made of a resin such as PVC (polyvinyl chloride) or PP (polypropylene), like the lid 63, and has a rectangular shape substantially the same shape as the opening 62. As shown in FIG. 10, air grip seals 72a and 72b are respectively arranged along the outer peripheries of the front and back sides of the sliding door 72, while the air grip seals 72a and 72b are provided along the inner peripheral side of the air grip seal 72a on the lower surface of the drying chamber. The ring 72c is arranged. Air grip seal 7 with O-ring 72c
It is also possible to arrange along the outer peripheral side of 2a. The air grip seals 72a and 72b are expanded from the state where the slide door 72 is housed in the flange 70, so that the air grip seals 72a
The air grip seal 72b is in close contact with the bottom surface of the flange 70, and the O-ring 72c is
And the opening 62 is sealed.

As shown in FIG. 11, the wafer guide 43 is provided at the lower end of a support member 74 with a wafer holding portion 75 for holding, for example, 50 wafers W. Wafer holder 75
A central holding rod 76 provided at the lower end of the center, and two side holding rods 77 provided parallel to each other at both left and right end portions,
78 are fixed at both ends thereof. One end is fixed to the lower end of the support member 74, and the other end is fixed by the fixing portion member 79. Central holding rod 76 and side holding rods 77, 78
Are provided with a plurality of, for example, 50 wafer holding grooves 80 at predetermined intervals in the longitudinal direction. The wafer guide 43 is made of a material having excellent corrosion resistance, heat resistance, and strength resistance, for example, PEEK (polyetheretherketone), Qz, or the like.

A guide upper and lower bar 81 is fixed to the upper end of the wafer guide 43. This guide bar 8
As shown in FIGS. 4 and 5, 1 protrudes outward and vertically through a gripping mechanism 82 provided above the drying chamber 42. The grip mechanism 82 includes a guide vertical bar 81.
Is provided with an air grip seal 82a. When the vertical guide rod 81 is driven up and down, air is removed from the air grip seal 82a,
When the airtight seal 82a is closed, the air grip seal 82a is inflated. The upper ends of the guide upper and lower bars 81 are connected to a wafer guide Z-axis mechanism 83 provided behind the drying chamber 42. The wafer guide Z-axis mechanism 83 transfers the wafer W held by the wafer guide 43 between the cleaning tank 41 and the drying chamber 42 through the lower opening 62 by moving the guide vertical bar 81 up and down. Further, as shown in FIG. 4, the wafer transfer device 13 shown in FIG. 2 is disposed in front of the cleaning device 27. The wafer chuck 84 provided in the wafer transfer device 13 is used to
6, for example, 50 wafers W are received and the drying chamber 42
, And receives, for example, 50 wafers W from the wafer guide 43 in the drying chamber 42 and transfers the wafer W to the unloader section 15 of the unloading section 4. As shown in FIGS. 3 and 12, nozzles 85 and 86 for blowing nitrogen gas or the like downflow to the wafer W held by the wafer guide 43 in the drying chamber 42 are provided on both sides of the upper part in the drying chamber 42. Is provided. Nozzles 85, 86
Can be constituted by pipes 88 having ejection holes 87 provided at the same pitch as the interval between adjacent wafers W along the arrangement direction of the wafers W, for example.
Nozzles 85 and 86 are provided with control valve 9 by IPA evaporator 89.
A mixed gas of IPA and heated nitrogen is supplied through the filter 0 and the filter 91. Nitrogen heated via a nitrogen heater 92 and a control valve 93 is supplied to the IPA evaporator 89, and a control valve 95 is supplied from an IPA tank 94.
The IPA is supplied via the. IPA
The tank 94 is replenished with nitrogen via a control valve 96,
The IPA is replenished via the control valve 97.

On the other hand, as shown in FIG. 3 and FIG. 12, outlets 98 and 99 for discharging nitrogen gas and the like blown out from nozzles 85 and 86 are provided on both lower sides in the drying chamber 42.
Is provided. The outlets 98 and 99 are connected to an exhaust pump (not shown). Also, outlets 98, 99
Are provided with rectifying plates 101 and 102 as rectifying means having a plurality of intake ports 100, 100... For uniformly taking in nitrogen gas and the like blown out from the nozzles 85 and 86 from respective lower portions in the drying chamber 42, respectively. Communicating. As a result, as shown in FIG. 13, the nitrogen gas or the like blown out from each of the ejection holes 87 of each of the nozzles 85 and 86 passes through the surface of each of the wafers W as indicated by the dotted lines in FIG.
2 through the inlet 100. That is, turbulence does not occur in the flow of the nitrogen gas or the like. In addition,
A discharge port (not shown) for discharging the liquid is provided at a lower portion in the drying chamber 42.

As shown in FIG. 3, a pair of panel heaters 103 and 104 are provided on both sides of a middle portion in the drying chamber 42. A panel heater controller 105 is connected to these panel heaters 103 and 104 to perform temperature control. Thus, the inside of the drying chamber 42 is controlled to a temperature at which, for example, IPA boils.

As shown in FIG. 3, the wafer W transferred from the cleaning tank 41 to the drying chamber 42 is provided between the cleaning tank 41 and the drying chamber 42, for example, on both sides above the liquid level of the cleaning tank 41. 106 and 107 for blowing nitrogen gas to
Is provided. These nozzles 106 and 107 have substantially the same configuration as the nozzles 85 and 86 described above. A cooler 1 for cooling the nitrogen gas to a temperature of 0 ° C. to room temperature, more preferably about 5 ° C.
08 and the control valve 109 are supplied with cooled nitrogen gas.

An IPA supply path from the IPA supply mechanism merges with the cooled nitrogen gas supply path.
IPA can be supplied into the supply path of the nitrogen gas. Therefore, a mixed gas of nitrogen gas and IPA is sprayed and supplied from the nozzles 106 and 107, and an atmosphere of a mixed gas of nitrogen and IPA can be formed in a space above the liquid level of the cleaning tank 41.

Similarly, a mixed gas of nitrogen gas and IPA can be sprayed and dropped from the nozzles 106 and 107 to form an IPA film on the liquid surface of the cleaning tank 41. Next, the operation of the cleaning device 27 configured as described above will be described based on the processing flow shown in FIG. The following operation control is performed by, for example, a control unit not shown.

First, the lid 63 at the top of the drying chamber 42 is opened with the sliding door 72 at the bottom of the drying chamber 42 closed and the rotating door 59a open (step 1401, FIG. 15).

In this state, a nitrogen gas is supplied to the drying chamber 42.
The inside is purged with nitrogen gas. The purging with the nitrogen gas may be performed before the upper air lid 63 is opened.

Next, the wafer chuck 84 is lowered into the drying chamber 42 and the wafer W is inserted into the wafer guide 43 in the drying chamber 42.
(Step 1402, FIG. 16). Next, the lid 63 at the top of the drying chamber 42 is closed, and the slide door 72 at the bottom of the drying chamber 42 is opened (step 1403, FIG. 17). Then, the wafer guide 43 holding the wafer W is lowered,
The wafer W is transferred into the cleaning tank 41 (Step 1404,
18), the revolving door 59a below the drying chamber 42 is closed (step 1405, FIG. 19).

Thereafter, in the cleaning tank 41, HF / H ₂ O
The mixture was ejected from the nozzle 44, 45 storing the HF / H ₂ O mixture, reserving the HF / H ₂ O mixture to the wafer W
(Step 1406).
(FIG. 20).

In this embodiment, the wafer W is transferred into the cleaning tank 41 and then the HF / H ₂ O mixed liquid is transferred to the cleaning layer 41.
However, as another method, the inside of the cleaning tank 41 is filled with an HF / H ₂ O mixed solution in advance,
In this, a method of transferring the wafer W into the cleaning tank 41 can also be adopted. At this time, in either method,
The HF / H ₂ O mixed liquid ejected from the nozzles 44 and 45 forms a convection toward the wafer W in the cleaning layer 41, and promotes chemical cleaning.

Next, the HF / H ₂ O mixed solution is discharged, and then DIW is ejected from the nozzles 44 and 45 to perform a rinsing process (step 1407, FIG. 20). Similarly nozzle 4
The DIW ejected from the nozzles 4 and 45 forms a convection toward the wafer W in the cleaning layer 41 to promote the rinsing process. In addition, without discharging the HF / H ₂ O mixed solution,
DIW may be ejected as it is from the state where the F / H ₂ O mixed solution is stored, and the HF / H ₂ O mixed solution may be gradually thinned. On the other hand, while such a cleaning process is being performed, in the drying chamber 42, nitrogen gas is blown out from the nozzles 85 and 86 and replaced with nitrogen gas (step 1408, FIG. 2).
0), and then IPA or IPA from nozzles 85 and 86
And a gas mixture of nitrogen and nitrogen.
PA atmosphere (step 1409, FIG. 2
0).

Thereafter, the revolving door 59a at the lower part of the drying chamber 42 is opened (step 1410, FIG. 21), and the wafer guide 43 holding the wafer W is raised to remove the wafer W from the drying chamber 42.
(Step 1411, FIG. 22). At this time, the cleaning chamber 41 is connected to the drying chamber 4 through the nozzles 106 and 107.
The nitrogen gas is sprayed on the wafer W transferred to the wafer 2. Next, the slide door 72 at the lower part of the drying chamber 42 is closed (step 1412, FIG. 23), and IPA or a mixed gas of IPA and nitrogen gas is blown downflow from the nozzles 85 and 86 onto the wafer W in the drying chamber 42. (Step 1413, FIG. 24). Thereafter, the inside of the drying chamber 42 is evacuated to reduce the pressure, and at the same time, the nitrogen gas is blown down the wafer W in the drying chamber 42 from the nozzles 85 and 86 (step 1414, FIG. 24). In this case, nitrogen gas may be blown without reducing the pressure in the drying chamber 42, or the pressure in the drying chamber 42 may be reduced without blowing the nitrogen gas.

Thereafter, the evacuation of the inside of the drying chamber 42 is stopped while blowing nitrogen gas to return the inside of the drying chamber 42 to normal pressure (step 1415, FIG. 23). Then, the lid 63 above the drying chamber 42 is opened (Step 1416, FIG. 25), and the wafer chuck 84 descends into the drying chamber 42 to receive the wafer W from the wafer guide 43 in the drying chamber 42 (Step 1417, FIG. 26). ), The wafer chuck 84 rises and carries the wafer W out of the drying chamber 42 (step 141).
8, FIG. 27).

As described above, the cleaning device 27 according to the present embodiment is used.
In the above, the drying chamber 42 and the cleaning tank 41 are vertically separated from each other, and the space of the drying chamber 42 and the space of the cleaning tank 41 can be shielded by the rotating door 59a and the sliding door 72,
Since the cleaning process in the cleaning tank 41 is shielded by the revolving door 59a, and the drying process in the drying chamber 42 is sealed and shielded by the slide door 72, the mutual operation between the drying chamber 42 and the cleaning tank 41 is performed. There is no adverse effect of chemicals between the two. Further, since the drying chamber 42 and the cleaning tank 41 can be designed under different conditions, the degree of freedom of design is high, and the speed of the cleaning process and the size of the apparatus can be further reduced. For example, the panel heater 1 is installed in the drying chamber 42.
03 and 104 can be attached to heat the inside of the drying chamber 42 so that the drying process can be performed in a short time, or when the wafer W is cleaned in the cleaning tank 42,
It is also possible to replace the inside with IPA and perform the drying process in a short time. Further, since the drying chamber 42 can be made smaller than in a conventional cleaning apparatus in which the processing tank and the drying chamber are performed in the same room, the drying process can be performed more efficiently. Further, since the volume in the drying chamber 42 can be minimized, the pressure resistance of the drying chamber 42 is not so required. Therefore, the thickness of the drying chamber 42 can be reduced, and the vacuum pump 11 used for reducing the pressure can be used.
0 can be reduced.

It should be noted that the present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the technical concept.

For example, in the above embodiment, the drying chamber 4
Although the opening / closing means for the two openings 62 is constituted by two doors, a revolving door and a sliding door, it can be a single sliding door having two modes as shown in FIGS. As shown in these figures, the slide door 111 is slightly longer than the width of the opening 62 of the drying chamber 42, and has a cutout 112 through which the support member 74 of the wafer guide 43 passes.
Is different from the sliding door shown in FIGS. 9 and 10. Then, the opening 62 is opened up to Step 1404 shown in FIG. 14, and between Steps 1405 to 1409, the notch 112 is opened as shown in FIG.
The opening 62 is closed by moving the slide door 111 so as to overlap the opening 62. It becomes possible to pass the support member 74 at this overlapping portion. Next, in steps 1410 to 1411, the opening 62 is opened again, and thereafter, in step 1412 and thereafter, the sliding door 111 is moved so as to completely close the opening 62 as shown in FIG. Also in this case, the air grip seals 72a and 72b are inflated to enhance the airtightness.

In the above-described embodiment, nitrogen is used as the inert gas. However, other inert gases such as argon and helium can be used. These can be dried more effectively by heating, but need not be heated.

In the above-described embodiment, IPA is used as an organic solvent that is water-soluble and has a function of reducing the surface tension of pure water with respect to a substrate to be processed.
And organic solvents such as polyhydric alcohols such as ethylene glycol.

In the above-described embodiment, the cleaning device 2
7, the chemical treatment with the HF / H ₂ O mixed solution, the rinsing treatment with pure water, and the drying treatment are performed, but at least the drying treatment and at least one other treatment are carried out in the technical aspect of the present invention. It is included in the range. Other treatments include chemical treatment with an HF / H ₂ O mixture, rinsing with pure water, chemical treatment with an NH ₄ OH / H ₂ O ₂ / H ₂ O mixture, HCl / H ₂ O ₂ / H ₂ There is a chemical treatment with an O mixed solution. Therefore, in the cleaning device according to the present invention,
For example, a chemical treatment with an NH ₄ OH / H ₂ O ₂ / H ₂ O mixture, a chemical treatment with an HCl / H ₂ O ₂ / H ₂ O mixture, a chemical treatment with an HF / H ₂ O mixture, and a rinse with pure water. Of course, it may be configured to perform the processing and the drying processing.

In the above-described embodiment, an example was described in which the cleaning apparatus according to the present invention was combined with the cleaning apparatus in which the processing tanks were connected in the processing order. However, the cleaning apparatus according to the present invention was used as a stand-alone type apparatus. It is also possible to use. In this case, for example, the transport unit serving as the loader unit and the unloader unit can be connected to the cleaning device according to the present invention.

The substrate to be processed is not limited to a semiconductor wafer, but may be an LCD substrate, a glass substrate, a CD substrate, a photomask, a printed substrate, a ceramic substrate, or the like.

[0083]

As described in detail above, according to the present invention,
A processing tank for storing the processing liquid and a substrate to be processed being immersed in the stored processing liquid, and an openable and closable opening disposed above the processing tank for transferring the substrate to and from the processing tank. Provided with a drying chamber, and transfer means for transferring the substrate to be processed between the processing tank and the drying chamber via the opening.
Means for making the drying chamber an atmosphere of an organic solvent, so that there is no adverse effect of the chemical treatment during the drying process, the degree of freedom in design is high, the speed of the cleaning process is increased, and the apparatus is further downsized. In the case where the pressure in the drying chamber is reduced while the atmosphere in the drying chamber is an organic solvent atmosphere, the thickness of the drying chamber and the processing tank can be reduced, and the drying chamber is used to reduce the pressure. The output of a vacuum pump or the like can be reduced.

In the above-mentioned cleaning apparatus, a means for closing the drying chamber when the opening is closed is further provided.
The thickness of the drying chamber can be further reduced, and the output of a vacuum pump or the like used for reducing the pressure can be further reduced.

A processing tank for storing a processing liquid and a substrate to be processed being immersed in the stored processing liquid, and an opening disposed above the processing tank and for transferring the substrate to and from the processing tank. A drying chamber provided with, while supporting from the drying chamber side,
A holding member for holding the substrate to be processed, transfer means for transferring the holding member between the processing tank and the drying chamber through the opening, and opening and closing the opening, and the drying chamber when closed. First opening / closing means for closing the opening, and second opening / closing for opening / closing the opening and closing the opening so as to have a gap for supporting the holding member from the drying chamber side in the processing tank when closed. Means, and means for making the drying chamber an atmosphere of an organic solvent, so that the thickness of the drying chamber can be further reduced, and further lowering the output of a vacuum pump or the like used for reducing the pressure can be achieved. Can be planned.

A processing tank for storing a processing liquid and a substrate to be processed is immersed in the stored processing liquid, and an opening disposed above the processing tank and for transferring the substrate to and from the processing tank. A drying chamber provided with, while supporting from the drying chamber side,
A holding member for holding the substrate to be processed, transfer means for transferring the holding member between the processing tank and the drying chamber through the opening, and opening and closing the opening, and the drying chamber when closed. Opening and closing means having a first mode for closing the opening, and a second mode for closing the opening so as to have a gap for supporting the holding member from the drying chamber side in the processing tank when closed. Since the drying chamber is provided with a means for setting an atmosphere of an organic solvent, the thickness of the drying chamber can be further reduced, and the output of a vacuum pump or the like used for reducing the pressure can be further reduced. .

In the above-mentioned cleaning apparatus, there is further provided a means disposed between the processing tank and the drying chamber for blowing an inert gas to the substrate to be processed transferred from the processing tank to the drying chamber. Drying can be performed efficiently. In this case, if a cooling means for cooling the inert gas is further provided, it is possible to promote the condensation by the organic solvent in the drying chamber.

In the above-mentioned cleaning apparatus, since the means for reducing the pressure in the drying chamber and the means for blowing the inert gas to the substrate to be processed in the drying chamber are provided, the drying process can be performed more efficiently.

In the above-described cleaning apparatus, since the heating device is further provided in the drying chamber, the drying process can be performed more efficiently.

In the above-described cleaning apparatus, since the processing liquid stored in the processing tank is a cooled rinsing liquid, condensation with an organic solvent in the drying chamber can be promoted.

In the method of the present invention, (a) a step of transferring a substrate to be processed through an opening of the drying chamber to a processing tank provided therebelow while holding the substrate to be processed by a holding member supported from the drying chamber side; (B) closing the opening, (c) storing a processing liquid in the processing tank before or after transfer, and immersing the processing target substrate, and (d) opening the opening.
Transferring the substrate to be processed from the processing tank to the drying chamber; (e) closing the opening; and (f) drying the substrate to be processed in an atmosphere of an organic solvent.
In the drying process, there is no adverse effect of the chemical treatment during the drying process, the degree of freedom in design is high, the speed of the cleaning process can be increased, and the size of the apparatus can be further reduced. The thickness of the tank can be reduced, and the output of a vacuum pump or the like used for reducing the pressure can be reduced.

In the upper air method, before the step (b), after the substrate to be processed is transferred from the outside of the cleaning device to the drying chamber, the drying chamber is filled with an inert gas. In this case, there is no adverse effect due to the chemical solution treatment.

In the upper air method, an inert gas is supplied to the treatment tank in the steps (a) to (f), so that there is no adverse effect of the chemical treatment during the drying treatment.

In the upper air method, the drying chamber is already in the atmosphere of the organic solvent before the substrate to be processed is transferred to the drying chamber, so that the drying process can be performed more efficiently. In the upper air method, after transferring the substrate to be processed from the drying chamber to the processing tank, the step of closing the opening is a step of closing while providing a gap for supporting the holding member from the drying chamber side. Since the cleaning process can be performed while the holding member is in the processing tank, the speed of the cleaning process can be increased.

In the upper air method, the step of closing the opening after transferring the substrate to be processed from the processing tank to the drying chamber is a step of closing the opening. The separation prevents the mist or the like of the processing liquid from entering the drying chamber, so that the drying processing is not adversely affected by the chemical processing.

[Brief description of the drawings]

FIG. 1 is a perspective view of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view of the cleaning apparatus shown in FIG.

FIG. 3 is a vertical sectional front view of the cleaning apparatus in the cleaning apparatus shown in FIG. 1;

FIG. 4 is a vertical sectional side view of the cleaning device shown in FIG. 3;

5 is a perspective view of the cleaning device shown in FIG.

FIG. 6 is a perspective view showing the vicinity of an upper lid of the cleaning device shown in FIG. 3;

FIG. 7 is a diagram showing a schematic configuration of a lid driving unit of the cleaning device shown in FIG. 3;

FIG. 8 is a perspective view illustrating a configuration of a rotating door mechanism of the cleaning device illustrated in FIG. 3;

9 is a perspective view showing a slide door mechanism of the cleaning device shown in FIG.

FIG. 10 is a vertical sectional front view showing the slide door mechanism shown in FIG. 9;

11 is a perspective view showing a wafer guide of the cleaning device shown in FIG.

FIG. 12 is a perspective view illustrating a nozzle and a discharge port of the cleaning device illustrated in FIG. 3;

FIG. 13 is a view for explaining the operation of the current plate of the cleaning device shown in FIG. 3;

FIG. 14 is a processing flow of the operation of the cleaning apparatus shown in FIG. 3;

15 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1401 in FIG. 14).

FIG. 16 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1402 in FIG. 14).

17 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1403 in FIG. 14).

18 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1404 in FIG. 14).

FIG. 19 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1405 in FIG. 14).

20 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to steps 1406 to 1409 in FIG. 14).

21 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1410 in FIG. 14).

FIG. 22 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1411 in FIG. 14).

FIG. 23 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to steps 1412 and 1415 in FIG. 14).

24 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to steps 1413 and 1414 in FIG. 14).

25 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1416 in FIG. 14).

26 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1417 in FIG. 14).

FIG. 27 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1418 in FIG. 14).

FIG. 28 is a plan view showing a slide door mechanism according to another embodiment of the present invention.

FIG. 29 is a plan view showing a slide door mechanism according to another embodiment of the present invention.

FIG. 30 is a schematic view showing a conventional cleaning device.

[Explanation of symbols]

 27 Cleaning device 41 Cleaning tank 42 Drying chamber 43 Wafer guide 44, 45 Nozzle 59 Rotating door mechanism 61 Opening upper part of drying chamber 62 Opening lower part of drying chamber 63 Sealed lid 64 Slide door mechanism 66 Lid drive unit 72 Slide door 85, 86 Nozzles 98, 99 Outlets 101, 102 Rectifier plates 103, 104 Panel heaters 106, 107 Nozzles

Claims (21)

[Claims] A processing tank for storing the processing liquid, wherein the processing target substrate is immersed in the stored processing liquid; and a processing tank disposed above the processing tank for transferring the processing target substrate to and from the processing tank. A drying chamber having an openable and closable opening; transfer means for transferring the substrate to be processed between the processing tank and the drying chamber through the opening; and an atmosphere of an organic solvent in the drying chamber. And a cleaning device. 2. The cleaning apparatus according to claim 1, further comprising: means for sealing the drying chamber when the opening is closed. 3. A processing tank for storing a processing liquid and a substrate to be processed being immersed in the stored processing liquid; and a processing tank disposed above the processing tank and transferring the processing substrate to and from the processing tank. A drying chamber provided with an opening, a holding member for holding the substrate to be processed while supporting the drying chamber, and a holding member between the processing tank and the drying chamber through the opening. A first means for opening and closing the opening and closing the drying chamber when closed;
A second opening / closing means for opening and closing the opening, and closing the opening so as to have a gap for supporting the holding member from the drying chamber side in the processing tank when the opening is closed; Means for making the room an atmosphere of an organic solvent. 4. A processing tank for storing a processing liquid and a substrate to be processed being immersed in the stored processing liquid; and a processing tank disposed above the processing tank for transferring the processing substrate between the processing tank and the processing tank. A drying chamber provided with an opening, a holding member for holding the substrate to be processed while supporting the drying chamber, and a holding member between the processing tank and the drying chamber through the opening. A first means for opening and closing the opening and closing the drying chamber when closed;
Opening and closing means having a second mode for closing the opening so as to have a gap for supporting the holding member from the drying chamber side in the processing tank when closed, and an organic solvent in the drying chamber. A cleaning device, comprising: 5. The cleaning apparatus according to claim 1, wherein the processing liquid in the processing tank is a degassed rinsing liquid. 6. The cleaning apparatus according to claim 1, wherein an inert gas is blown against the substrate to be processed, which is disposed between the processing tank and the drying chamber and transferred from the processing tank to the drying chamber. A cleaning device, further comprising means. 7. The cleaning apparatus according to claim 6, further comprising cooling means for cooling the inert gas. 8. The cleaning apparatus according to claim 1, further comprising: means for depressurizing the inside of the drying chamber; and means for blowing an inert gas to a substrate to be processed in the drying chamber. Cleaning equipment. 9. The cleaning apparatus according to claim 1, further comprising a heating unit disposed in the drying chamber. 10. The cleaning apparatus according to claim 1, wherein the processing liquid stored in the processing tank is a cooled rinsing liquid. 11. A step of: (a) holding a substrate to be processed by a holding member supported from a drying chamber side, and transferring the substrate to a processing tank provided below the opening through an opening of the drying chamber;
(B) a step of closing the opening, (c) storing a processing liquid in the processing tank before or after transfer, and immersing the substrate to be processed, and (d) opening the opening, Transferring a processing substrate from the processing tank to the drying chamber;
(E) a step of closing the opening, and (f) a step of drying the substrate to be processed in an atmosphere of an organic solvent. 12. The cleaning method according to claim 11, wherein before the step (b), the substrate to be processed is transferred from the outside of the cleaning apparatus to the drying chamber, and then the inert gas is supplied to the drying chamber. A cleaning method, further comprising a step of filling with. 13. The cleaning method according to claim 11, wherein an inert gas is supplied to the processing tank in the steps (a) to (f). 14. The cleaning method according to claim 11, wherein a gas containing an organic solvent is supplied to the processing tank before the step (d). 15. The cleaning method according to claim 11, wherein a gas containing an organic solvent is supplied to the processing tank during the step (d). 16. The cleaning method according to claim 11, further comprising a step of blowing an inert gas to the substrate to be processed transferred from the processing tank to the drying chamber. 17. The cleaning method according to claim 11, wherein after the step (f), the pressure inside the drying chamber is reduced.
The cleaning method further comprising a step of blowing an inert gas to the substrate to be processed in the drying chamber. 18. The cleaning method according to claim 11, further comprising a step of previously setting the drying chamber to an atmosphere of an organic solvent between the steps (b) and (d). And the washing method. 19. The cleaning method according to claim 11, wherein the processing liquid stored in the processing tank is a cooled rinsing liquid. 20. The cleaning method according to claim 11, wherein, after transferring the substrate to be processed from the drying chamber to the processing bath, the step of closing the opening includes the step of closing the opening from the drying chamber side. A cleaning method, which is a step of closing while providing a gap for supporting a holding member. 21. The cleaning method according to claim 11, wherein, after transferring the substrate to be processed from the processing tank to the drying chamber, the step of closing the opening includes sealing the opening. A cleaning method, which is a process.