JPH10154688A - Cleaning device and cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect a processed substrate substrate against an adverse effect caused by chemical liquid processing by a method wherein the substrate is immersed into processing liquid kept in a processing tank, a drying chamber provided with a closable opening through which the processed substrate is transferred is arranged over the processing tank, and gas which contains inert gas is made to blow against the substrate. SOLUTION: A cleaning device is equipped with a cleaning tank 41 serving as a processing tank filled up with processing liquid where a wafer W is dipped as a processed substrate and a cylindrical drying chamber 42 which is arranged above the cleaning tank 41 to dry up wafer W transferred from the cleaning tank 41. The cleaning tank 41 houses the wafer W and wafer guides 43 which hold the wafer W. Nozzles 44 and 45 which spray processing liquid on the wafer W housed in the cleaning tank 41 are provided to the peripheral edge of the base of the cleaning tank 41. Nozzles 106 and 107 which blow nitrogen gas against the wafer W which is transferred to the drying chamber 42 from the cleaning tank 41 are provided between the cleaning tank 41 and the drying chamber 42. By this setup, chemical liquid can be prevented from diffusing into a surrounding atmosphere.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and a cleaning method for immersing a substrate to be processed, such as a semiconductor wafer or a glass substrate for an LCD, in a chemical solution or a rinsing liquid and drying the substrate.

[0002]

2. Description of the Related Art For example, a description will be given of a cleaning process in a process of manufacturing a semiconductor device such as an LSI. A cleaning device is used to remove
Among them, a wet cleaning apparatus is widely used because it can effectively remove the above-mentioned contamination, can perform batch processing, and has good throughput.

In such a wet cleaning apparatus, a wafer to be cleaned is subjected to a chemical liquid cleaning treatment such as an ammonia treatment, a hydrofluoric acid treatment, a sulfuric acid treatment, a water washing treatment with pure water or the like, and an isopropyl alcohol (hereinafter referred to as “IPA”). ) Is performed, for example, and a chemical solution, pure water, and IPA are supplied to a processing tank and a drying chamber arranged in the processing order, for example, in units of 50 sheets. A batch processing method in which wafers are sequentially immersed in a processing tank and dried is widely used.

However, providing a processing tank or a drying chamber for each processing increases the size of the apparatus, and moreover, there are many opportunities to transfer the wafer, that is, to expose the wafer to the atmosphere, so that there is a high possibility that particles will adhere. .

[0005] For this reason, Japanese Patent Application Laid-Open Nos. 64-81230 and 6-326073 disclose a cleaning apparatus in which a treatment tank and a drying chamber are integrated to perform a chemical solution treatment and a drying treatment in the same chamber. Has been advocated. In brief, as shown in FIG. 26, these cleaning apparatuses store a chemical solution 202 and the like in a lower portion 201 of a chamber 200 and immerse the wafer W, then pull up the wafer W, and dry the wafer W in an upper portion 203 of the chamber 200 using IPA or the like. The processing is performed.

[0006]

However, in the cleaning apparatus having the above-mentioned structure, the atmosphere of the chemical solution remains in the upper portion of the chamber during the drying process, which may adversely affect the wafer W. Since it is necessary to simultaneously satisfy the required specifications of the drying process, the degree of freedom of design is limited, and it is difficult to incorporate various measures for speeding up the cleaning process and reducing the size of the chamber. is there.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a cleaning apparatus and a cleaning method that are not adversely affected by a chemical solution during drying. SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning apparatus and a cleaning method which have a high degree of freedom in design, can speed up a cleaning process, and can further reduce the size of the apparatus.

It is still another object of the present invention to provide a cleaning apparatus and a cleaning method that can perform a drying process more efficiently.

Another object of the present invention is to provide a cleaning apparatus capable of preventing the surface of a substrate to be processed from being oxidized.

Another object of the present invention is to provide a washing apparatus which separates a treatment tank section and a drying section to prevent a mist of a treatment liquid from entering a drying chamber and obtain stable drying performance. It is to provide a cleaning method.

[0011]

In order to achieve the above object, according to the present invention, a processing tank for storing a processing liquid, and a substrate to be processed is immersed in the stored processing liquid, and an upper part of the processing tank. And a drying chamber provided with an openable and closable opening for transferring a substrate to be processed between the processing tank and the processing tank. A cleaning apparatus is provided, comprising: transfer means for transferring a substrate; and gas blowing means disposed in the drying chamber and blowing a gas containing an inert gas to the substrate to be processed.

In this case, as described in claim 2, an inert gas is provided between the processing tank and the drying chamber, and the substrate to be transferred from the processing tank to the drying chamber contains an inert gas. Means for blowing gas may be further provided.

Further, as set forth in claim 3, a panel heater disposed in the drying chamber may be further provided.

According to a fourth aspect of the present invention, the gas blowing means blows a gas containing an inert gas onto the substrate to be processed from an upper part of the drying chamber in a down flow. A gas discharging means for discharging a gas containing an inert gas blown out from the gas blowing means through a discharge port provided at a lower portion in the drying chamber may be further provided. In this case, as described in claim 5, a plurality of intakes communicating with the outlet and uniformly taking in the gas containing the inert gas blown out from the gas blowing means from each lower portion in the drying chamber. A flow straightening means having a mouth may be further provided. In the cleaning apparatus configured as described above, as described in claim 6, nitrogen gas is preferable as the inert gas, and furthermore, the inert gas is an inert gas heated as described in claim 7, A mixed gas of an organic solvent and an inert gas as described in claim 8 and a mixed gas of an organic solvent and a heated inert gas as described in claim 9 are preferable.

Preferably, the processing solution stored in the processing tank is a degassed rinsing solution.

According to the eleventh aspect, (a) a step of immersing a substrate to be processed in a processing tank in which a processing liquid is stored, and (b) an opening which can be opened and closed into a drying chamber disposed above the processing tank. Transferring the substrate to be processed from the processing tank through the unit, (c) closing the opening after transferring the substrate to the drying chamber, and (d) stopping the processing with respect to the substrate. Spraying a gas containing an active gas.

According to the twelfth aspect, (a) a step of immersing a substrate to be processed in a processing tank storing a processing liquid; and (b) an opening which can be opened and closed into a drying chamber disposed above the processing tank. Transferring a substrate to be processed from the processing bath through a unit, (c) blowing a gas containing an inert gas onto the substrate to be processed, and (d) closing the opening. A cleaning method is provided, comprising:

In this case, as described in claim 13 or claim 14, it is preferable that an atmosphere of an organic solvent is set in the drying chamber or the processing tank before the step (b).

According to the first aspect, the drying chamber and the processing tank are vertically separated from each other, and the space of the drying chamber and the space of the processing tank can be shielded by the openable and closable opening. In this case, there is no adverse effect of the chemical treatment. In addition, since the drying chamber and the processing tank can be designed under different conditions, the degree of freedom of design is high,
It is possible to increase the speed of the cleaning process and further downsize the apparatus. Furthermore, since the processing liquid on the surface of the substrate to be processed is blown off by blowing a gas containing an inert gas onto the substrate to be processed, the drying process can be performed more efficiently. Since the space for spraying and drying the substrate to be processed is separated from the space for the processing tank, the space can be made smaller and the drying process can be performed more efficiently.

According to the second aspect, the means for blowing a gas containing an inert gas onto the substrate to be transferred transferred from the processing tank to the drying chamber plays an auxiliary role in drying the substrate to be processed. Drying can be performed efficiently.

According to the third aspect, since the temperature in the drying chamber can be raised, the drying process can be performed more efficiently.

According to the fourth aspect, the processing liquid on the surface of the substrate to be processed can be blown off by the gas containing the inert gas of the downflow, so that the drying processing can be performed more efficiently.

According to the fifth aspect, the gas including the downflow inert gas can be uniformly poured into each of the substrates to be processed by the rectification means, and the drying process can be performed more efficiently.

According to the sixth aspect, by using nitrogen gas as the inert gas, it is possible to prevent the surface of the substrate to be oxidized when the substrate is made of Si, for example. According to the seventh to ninth aspects, the drying process can be performed more efficiently.

According to the tenth aspect, since the processing liquid stored in the processing tank is a degassed rinsing liquid, the surface of the processing substrate is oxidized when the processing substrate is made of Si, for example. Can be prevented.

According to the eleventh and twelfth aspects, the substrate to be processed is transported from the processing tank to the drying chamber, the opening is closed to shield the space, and then the drying processing is performed. There is no adverse effect of the treatment. In addition, preparations for processing in the next processing tank at the time of drying processing can be made, and throughput can be improved. In addition, since the drying chamber and the processing tank can be designed under different conditions, the degree of freedom of design is high, and the speed of the cleaning process and the size of the apparatus can be further reduced. Further, since a gas containing an inert gas is blown onto the substrate to be processed to blow off the processing liquid on the surface of the substrate to be processed, the drying process can be performed more efficiently. Then, by separating the space for spraying and drying the substrate to be processed from the space of the processing tank, the space can be made smaller and the drying process can be performed more efficiently.

According to the thirteenth and fourteenth aspects, the drying chamber is already in the atmosphere of the organic solvent before the substrate to be processed is transferred to the drying chamber, so that the drying process can be performed more efficiently. .

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. This embodiment is an example applied to a semiconductor wafer (hereinafter, referred to as "wafer") cleaning apparatus. The cleaning apparatus will be described. As shown in FIGS. 1 and 2, the cleaning apparatus 1 as a whole performs a loading section 2 for accommodating a wafer before cleaning in a carrier unit and a wafer cleaning process. The cleaning unit 3 includes a cleaning processing unit 3 and an unloading unit 4 for taking out wafers after the cleaning processing in cassette units.

The carry-in section 2 has a standby section 6 for holding a carrier 5 containing a predetermined number of wafers before cleaning processing, for example, 25 sheets, and taking out wafers from the carrier 5.
A loader unit 7 for aligning the orientation flat and detecting a single wafer is provided. Further, the carrier 5 carried from outside by a transfer robot or the like is transported to the standby unit 6, and the standby unit 6 and the loader unit 7 A transfer arm 8 for transferring the carrier 5 is provided therebetween.

The cleaning section 3 has a front side (FIG. 1).
, Three wafer transfer devices 11, 12,
In addition, a tank 13 for storing a processing liquid such as a chemical solution and a piping area 14 for storing various piping groups are formed on the back side thereof through a partition wall.

On the other hand, the unloading section 15 includes an unloader section 15 for accommodating the wafers cleaned by the cleaning section 3 in the carrier 5 and a standby section 16 for holding the carriers 5 accommodating the cleaned wafers. , Unloader unit 15 and standby unit 1
6, a transfer arm 17 for transferring the carrier 5 is provided.

The cleaning apparatus 1 is provided with a carrier transport section 18 for transporting the empty carrier 5 in the carry-in section 2 to the carry-out section 4. The carrier transport unit 18 includes a carrier conveyor 19 provided above the cleaning unit 3,
In the loading section 2, the carrier arm 8 receives the empty carrier 5 from the loader section 7 by the transport arm 8 and stores the carrier with wafers therein and the carrier without wafers therein, and the transport section 17 from the carrier conveyor 19 in the unloading section 4. And a carrier transfer section (not shown) for receiving the empty carrier 5 and transferring it to the unloader section 15.

The cleaning section 3 cleans the wafer chuck 21 of the wafer transfer device 11 in order from the loader section 7 side.
A chuck cleaning / drying processing tank 22 for drying, a chemical cleaning processing tank for cleaning impurities such as organic contaminants, metal impurities, and particles on the wafer surface with a chemical solution, for example, a mixed solution of NH ₄ OH / H ₂ O ₂ / H ₂ O. 23, chemical cleaning tank 2
A washing and cleaning treatment tank 24 for washing the wafer washed in 3 with pure water, for example, a chemical solution for removing metal contamination on the wafer surface,
For example, a chemical cleaning tank 25 for cleaning with an HCl / H ₂ O ₂ / H ₂ O mixture, a water cleaning cleaning tank 26 for cleaning the wafers cleaned in the chemical cleaning tank 25 with pure water, for example, and oxidation of the wafer surface A chemical solution such as HF
The cleaning apparatus 27 and the wafer transfer apparatus 13 according to the present invention, which perform the cleaning process with the / H ₂ O mixed solution, clean the washed wafer with a rinsing liquid, for example, pure water, and further perform the drying process on the rinsed wafer. Cleaning / drying processing tanks 28 for cleaning and drying the wafer chuck (not shown). In addition, between the loader unit 7 and the chuck cleaning / drying processing tank 22, between the water cleaning / cleaning processing tank 24 and the chemical liquid cleaning processing tank 25, and between the water washing / cleaning processing tank 26.
Cleaning / drying processing tank 28 between
Partition plates 29, 30, 31, and 32 are provided between the unloader unit 15 and the unloader unit 15. The partition plates 29, 30, 31, and 32 are opened and closed by a drive mechanism (not shown), for example, at the time of wafer transfer. Thereby, diffusion of the atmosphere of the chemical solution into the adjacent space can be prevented.

The structure of the cleaning device 27 according to the present invention is shown in FIGS.
Referring to FIG. 11, the cleaning device 27 stores a processing solution, for example, a chemical solution such as an HF / H ₂ O mixed solution or a rinsing solution such as pure water, and stores the wafer as a substrate to be processed in the stored processing solution. A cleaning tank 41 as a processing tank in which W is immersed, and a cylindrical drying chamber 42 disposed above the cleaning tank 41 and performing a drying process on the wafer W transferred from the cleaning tank 41 are provided.

The cleaning tank 41 accommodates, for example, 50 wafers W held by the wafer guide 43 together with a wafer guide 43 described later. On both sides of the bottom of the cleaning tank 41,
Nozzle 4 for injecting the processing liquid toward each accommodated wafer W
4 and 45 are provided. The nozzles 44 and 45
Can be constituted by pipes having ejection holes provided at the same pitch as the interval between adjacent wafers W, for example, along the arrangement direction of the wafers W. Nozzle 4
4 and 45 are provided by switching the switching valve 46 in FIGS.
One of a chemical solution such as a HF / H ₂ O mixed solution and a rinsing solution such as pure water (DIW: deionized water) is supplied from a piping region 14 shown in FIG. The switching control of the switching valve 46 is performed at a predetermined timing by, for example, a control unit (not shown). The rinsing liquid is wafer W
It is better to use degassed DIW in order to prevent oxidation.

A collection tank 47 is provided around the cleaning tank 41 for collecting the processing liquid overflowing from the cleaning tank 41. The processing liquid recovered in the recovery tank 47 is circulated to the nozzles 44 and 45 via the switching valve 48, the pump 49, the filter 50, and the switching valve 51. The switching valve 48 switches between circulating or discharging the processing liquid recovered in the recovery tank 47 as described above. The switching valve 51 is
Switching between circulating the processing liquid collected in the collecting tank 47 as described above and supplying DIW to the nozzles 44 and 45 is switched.
The damper 5 is provided between the pump 49 and the filter 50.
2 are provided. A discharge port 53 for discharging the processing liquid is provided at the lowermost part of the cleaning tank 41, and whether or not the processing liquid is discharged from the discharge port 53 is switched by a switching valve 54.

On the other hand, in the upper and lower portions of the drying chamber 42, for example, rectangular openings 61 and 62 for transferring the wafer W are provided, and a lid 63 is disposed in the upper opening 61. A sliding door mechanism 64 is provided in the lower opening 62. The lid 63 is made of a resin such as PVC (polyvinyl chloride) or PP (polypropylene),
As shown in FIG. 5, both inside and outside have a shape obtained by cutting a cylinder in the vertical direction. Thereby, the inside of the drying chamber 42 closed by the lid 63 is formed in a cylindrical shape, and a turbulent flow of nitrogen gas or the like blown to the wafers W described later is prevented, and the wafers W are uniformly distributed. Nitrogen gas or the like is blown. As shown in FIG. 6, an O-ring 65 is arranged along the periphery of the opening 61,
The sealing property when the cover 1 is closed with the lid 63 is enhanced.

In the vicinity of the drying chamber 42, a lid driving section 66 for driving the lid 63 to open and close is provided. Lid drive unit 6
As shown in FIG. 7, 6 includes a cylinder 68 that rotationally drives a rotary arm 67 that fixes the lid 63 to the tip, and a cylinder 69 that moves the lid 63 and these rotating mechanisms up and down. The lid driving unit 66 first moves the lid 63 closing the opening 61 upward (FIG. 7), and rotates the rear lid 63 to a position outside the opening 61 (FIG. 7).
3 is moved downward (FIG. 7). Opening 61 with lid 63
The reverse operation is performed when closing with (see FIG. 7 →→).
).

As shown in FIG. 8, the sliding door mechanism 64 has a rectangular flange 70 disposed between the cleaning tank 41 and the drying chamber 42, and a flange 70 which is inserted and withdrawn through an opening 71 provided in the flange 70. Sliding door 72 that opens and closes inside
And a cylinder 73 for driving the slide door 72 to be inserted and withdrawn. The slide door 72 is made of a resin such as PVC (polyvinyl chloride) or PP (polypropylene), like the lid 63, and has a rectangular shape substantially the same shape as the opening 62.

As shown in FIG. 9, the wafer guide 43 is provided at the lower end of a support member 74 with a wafer holding portion 75 for holding, for example, 50 wafers W. Wafer holder 75
A central holding rod 76 provided at the lower end of the center, and two side holding rods 77 provided parallel to each other at both left and right end portions,
78 are fixed at both ends thereof. One end is fixed to the lower end of the support member 74, and the other end is fixed by the fixing portion member 79. Central holding rod 76 and side holding rods 77, 78
Are provided with a plurality of, for example, 50 wafer holding grooves 80 at predetermined intervals in the longitudinal direction. The wafer guide 43 is made of a material having excellent corrosion resistance, heat resistance, and strength resistance, for example, PEEK (polyetheretherketone), Qz, or the like.

A guide upper and lower bar 81 is fixed to the upper end of the wafer guide 43. This guide bar 8
As shown in FIGS. 4 and 5, 1 protrudes outward and vertically through a hole 82 provided in the upper part of the drying chamber 42. The upper end of the guide upper and lower bars 81 is connected to a wafer guide Z-axis mechanism 83 provided behind the drying chamber 42.
The wafer guide Z-axis mechanism 83 moves the guide vertical bar 81 up and down to move the wafer W held by the wafer guide 43 between the cleaning tank 41 and the drying chamber 42 through the lower opening 62.
Is transported. Further, as shown in FIG.
The wafer transfer device 13 shown in FIG. The wafer chuck 84 provided in the wafer transfer device 13 receives, for example, 50 wafers W from the adjacent washing / cleaning processing tank 26 as shown in FIG.
2, and receives, for example, 50 wafers W from the wafer guide 43 in the drying chamber 42 and transfers the wafer W to the unloader section 15 of the unloading section 4.

As shown in FIG. 3 and FIG.
On both sides of the upper part of the inside, a wafer guide 43 in the drying chamber 42
Nozzles 85 and 86 are provided for spraying a nitrogen gas or the like downflow on the wafer W held in the wafer W. The nozzles 85 and 86 can be configured by pipes 88 having ejection holes 87 provided at the same pitch as, for example, the interval between adjacent wafers W along the arrangement direction of the wafers W. The nozzles 44 and 45 have an IPA evaporator 8
From 9, a mixed gas of IPA and heated nitrogen is supplied through a control valve 90 and a filter 91. Heated nitrogen is supplied to the IPA evaporator 89 via a nitrogen heater 92 and a control valve 93, and the IPA tank 9 is heated.
4, the IPA is supplied via a control valve 95. The IPA tank 94 is replenished with nitrogen via a control valve 96 and replenished with IPA via a control valve 97.

On the other hand, as shown in FIGS. 3 and 10, outlets 98, 99 for discharging nitrogen gas and the like blown out from nozzles 85, 86 are provided on both sides of the lower part in the drying chamber 42.
Is provided. The outlets 98 and 99 are connected to an exhaust pump (not shown). Also, outlets 98, 99
Are provided with rectifying plates 101 and 102 as rectifying means having a plurality of intake ports 100, 100... For uniformly taking in nitrogen gas and the like blown out from the nozzles 85 and 86 from respective lower portions in the drying chamber 42, respectively. Communicating. As a result, as shown in FIG. 11, the nitrogen gas or the like blown out from each of the ejection holes 87 of each of the nozzles 85 and 86 passes through the surface of each of the wafers W as indicated by the dotted lines in FIG.
2 through the inlet 100. That is, turbulence does not occur in the flow of the nitrogen gas or the like. In addition,
A discharge port (not shown) for discharging the liquid is provided at a lower portion in the drying chamber 42.

As shown in FIG. 3, a pair of panel heaters 103 and 104 are provided on both sides of a middle portion in the drying chamber 42. A panel heater controller 105 is connected to these panel heaters 103 and 104 to perform temperature control. Thus, the inside of the drying chamber 42 is controlled to a temperature at which, for example, IPA boils.

As shown in FIG. 3, between the cleaning tank 41 and the drying chamber 42, for example, on both sides above the liquid level of the cleaning tank 41, the wafer W transferred from the cleaning tank 41 to the drying chamber 42 is provided. 106 and 107 for blowing nitrogen gas to
Is provided. These nozzles 106 and 107 have substantially the same configuration as the nozzles 85 and 86 described above. Heated nitrogen is supplied to the nozzles 106 and 107 via a nitrogen heater 108 and a control valve 109.

An IPA supply path from the IPA supply mechanism joins in the middle of the cooled nitrogen gas supply path.
IPA can be supplied into the supply path of the nitrogen gas. Therefore, a mixed gas of nitrogen gas and IPA is sprayed and supplied from the nozzles 106 and 107, and an atmosphere of a mixed gas of nitrogen and IPA can be formed in a space above the liquid level of the cleaning tank 41.

Similarly, a mixed gas of nitrogen gas and IPA can be sprayed and dropped from the nozzles 106 and 107 to form an IPA film on the liquid surface of the cleaning tank 41. Next, the operation of the cleaning device 27 configured as described above will be described based on the processing flow shown in FIG. The following operation control is performed by, for example, a control unit not shown.

First, with the slide door 72 below the drying chamber 42 closed, the lid 63 above the drying chamber 42 is opened (step 1201, FIG. 13).

In this state, a nitrogen gas is supplied to the drying chamber 42.
The inside is purged with nitrogen gas. The purging with the nitrogen gas may be performed before the upper air lid 63 is opened.

Next, the wafer chuck 84 is lowered into the drying chamber 42 and the wafer W is inserted into the wafer guide 43 in the drying chamber 42.
(Step 1202, FIG. 14). Next, the lid 63 at the top of the drying chamber 42 is closed, and the slide door 72 at the bottom of the drying chamber 42 is opened (step 1203, FIG. 15). Then, the wafer guide 43 holding the wafer W is lowered,
The wafer W is transferred into the cleaning tank 41 (Step 1204,
16), the sliding door 72 below the drying chamber 42 is closed (step 1205, FIG. 17).

Thereafter, in the cleaning layer 41, HF / H ₂ O
The mixture was ejected from the nozzle 44, 45 storing the HF / H ₂ O mixture, reserving the HF / H ₂ O mixture to the wafer W
(Step 1206).
(FIG. 18).

In this embodiment, the wafer W is transferred into the cleaning tank 41 and then the HF / H ₂ O mixed liquid is transferred to the cleaning layer 41.
However, as another method, the inside of the cleaning tank 41 is filled with an HF / H ₂ O mixed solution in advance,
In this, a method of transferring the wafer W into the cleaning tank 41 can also be adopted. At this time, in either method,
The HF / H ₂ O mixed liquid ejected from the nozzles 44 and 45 forms a convection toward the wafer W in the cleaning layer 41, and promotes chemical cleaning.

Next, the HF / H ₂ O mixture is discharged, and then DIW is ejected from the nozzles 44 and 45 to perform a rinsing process (step 1207, FIG. 18). Similarly nozzle 4
The DIW ejected from the nozzles 4 and 45 forms a convection toward the wafer W in the cleaning layer 41 to promote the rinsing process. In addition, without discharging the HF / H ₂ O mixed solution,
DIW may be ejected as it is from the state where the F / H ₂ O mixed solution is stored, and the HF / H ₂ O mixed solution may be gradually thinned. On the other hand, while such a cleaning process is being performed, IPA is blown out from the nozzles 85 and 86 in the drying chamber 42, and the inside of the drying chamber 42 is set to an IPA atmosphere in advance (step 1208, FIG. 18).

Thereafter, the sliding door 72 below the drying chamber 42
Is opened (Step 1209, FIG. 19), the wafer guide 43 holding the wafer W is raised, and the wafer W is
2 (step 1210, FIG. 20). At this time, the cleaning chamber 41 is connected to the drying chamber 4 through the nozzles 106 and 107.
The nitrogen gas is sprayed on the wafer W transferred to the wafer 2. Next, the slide door 72 at the bottom of the drying chamber 42 is closed (step 1211, FIG. 21), and nitrogen gas is blown downflow from the nozzles 85, 86 to the wafer W in the drying chamber 42 (step 1212, FIG. 22). ). Before closing the slide door 72, the nozzles 85 and 86 may be configured to blow nitrogen gas downflow from the nozzles 85 and 86 to the wafer W in the drying chamber 42.

Thereafter, the lid 63 above the drying chamber 42 is opened (step 1213, FIG. 23), and the wafer chuck 84 is opened.
Descends into the drying chamber 42 and receives the wafer W from the wafer guide 43 in the drying chamber 42 (step 1214, FIG. 2).
4) The wafer chuck 84 is lifted to carry the wafer W out of the drying chamber 42 (step 1215, FIG. 25).
As described above, in the cleaning device 27 according to the present embodiment, the drying chamber 42 and the cleaning tank 41 are vertically separated from each other, and the space of the drying chamber 42 and the space of the cleaning tank 41 can be shielded by the slide door 72. Since each process is configured to be performed by being shielded by the slide door 72, there is no adverse effect of the chemical solution or the like between the drying chamber 42 and the cleaning tank 41. Further, since the drying chamber 42 and the cleaning tank 41 can be designed under different conditions, respectively.
The degree of freedom in design is high, and the speed of the cleaning process and the size of the apparatus can be further reduced. For example, panel heaters 103 and 104 are attached in the drying
The drying process can be performed in a short time by heating the inside, and the drying process is performed by replacing the inside of the drying chamber 42 with IPA while cleaning the wafer W in the cleaning tank 42. Can be performed in a short time. Further, since the drying chamber 42 can be made smaller than in a conventional cleaning apparatus in which the processing tank and the drying chamber are performed in the same room, the drying process can be performed more efficiently. Further, in the drying process, since the processing liquid remaining on the surface of the wafer W is blown off by blowing a nitrogen gas onto the wafer W, the drying process can be performed more efficiently.

It should be noted that the present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the technical concept.

For example, in the above-described embodiment, nitrogen is used as the inert gas, but another inert gas such as argon or helium can be used. They are,
By heating, the drying treatment can be performed more effectively, but of course, the heating need not be performed.

In the above-described embodiment, IPA is used as an organic solvent that is water-soluble and has a function of reducing the surface tension of pure water with respect to a substrate to be processed.
In addition to such alcohols, ketones such as diethyl ketone, ethers such as methyl ether and ethyl ether, and organic solvents such as polyhydric alcohols such as ethylene glycol can be used.

In the above embodiment, the cleaning device 2
7, the chemical treatment with the HF / H ₂ O mixed solution, the rinsing treatment with pure water, and the drying treatment are performed, but at least the drying treatment and at least one other treatment are carried out in the technical aspect of the present invention. It is included in the range. Other treatments include chemical treatment with an HF / H ₂ O mixture, rinsing with pure water, chemical treatment with an NH ₄ OH / H ₂ O ₂ / H ₂ O mixture, HCl / H ₂ O ₂ / H ₂ There is a chemical treatment with an O mixed solution. Therefore, in the cleaning device according to the present invention,
For example, a chemical treatment with an NH ₄ OH / H ₂ O ₂ / H ₂ O mixture, a chemical treatment with an HCl / H ₂ O ₂ / H ₂ O mixture, a chemical treatment with an HF / H ₂ O mixture, and a rinse with pure water. Of course, it may be configured to perform the processing and the drying processing.

Further, in the above-described embodiment, an example was described in which the cleaning apparatus according to the present invention was combined with the cleaning apparatus in which the processing tanks were connected in the processing order. However, the cleaning apparatus according to the present invention was used as a stand-alone type apparatus. It is also possible to use. In this case, for example, the transport unit serving as the loader unit and the unloader unit can be connected to the cleaning device according to the present invention.

The substrate to be processed is not limited to a semiconductor wafer, but may be an LCD substrate, a glass substrate, a CD substrate, a photomask, a printed substrate, a ceramic substrate, or the like.

[0062]

As described in detail above, according to the present invention,
A processing tank for storing the processing liquid and a substrate to be processed being immersed in the stored processing liquid, and an openable and closable opening disposed above the processing tank for transferring the substrate to and from the processing tank. Provided with a drying chamber, and transfer means for transferring the substrate to be processed between the processing tank and the drying chamber via the opening.
A gas spraying unit that is disposed in the drying chamber and blows a gas containing an inert gas to the substrate to be processed, so that there is no adverse effect of the chemical solution processing during the drying processing, and the design is free. The degree of cleaning is high, the speed of the cleaning process can be increased, the size of the apparatus can be further reduced, and the drying process can be performed more efficiently.

[0063] The apparatus is further provided between the processing tank and the drying chamber, and further includes means for blowing a gas containing an inert gas to the substrate to be processed transferred from the processing tank to the drying chamber. Good drying treatment can be performed.

Since the heating device is further provided in the drying chamber, the drying process can be performed more efficiently.

The gas blowing means blows a gas containing an inert gas onto the substrate to be processed in a downflow state from the upper portion of the drying chamber, and the inert gas blown out by the gas blowing means is provided. Since a gas discharging means for discharging a gas containing gas from a discharge port provided at a lower portion in the drying chamber is further provided, the drying process can be performed more efficiently.

A rectifying means having a plurality of intake ports for communicating the gas containing the inert gas blown out by the gas blowing means from the lower portion of the drying chamber and communicating with the discharge port is further provided. Drying can be performed efficiently.

Since the inert gas is a nitrogen gas, it is possible to prevent the surface of the substrate to be oxidized when the substrate is made of Si, for example.

Since the gas containing the inert gas is a heated inert gas, a mixed gas of an organic solvent and an inert gas, or a mixed gas of an organic solvent and a heated inert gas, the gas is more efficiently dried. Processing can be performed.

Since the processing liquid stored in the processing tank is a degassed rinsing liquid, it is necessary to prevent the surface of the processing substrate from being oxidized when the processing substrate is made of Si, for example. Cut off.

According to the cleaning method of the present invention, (a) a step of immersing a substrate to be processed in a processing tank in which a processing liquid is stored;
(B) a step of transferring the substrate to be processed from the processing tank through an opening that can be opened and closed into a drying chamber disposed above the processing tank; and (c) after transferring the substrate to be processed into the drying chamber. Since the method includes a step of closing the opening and a step of (d) blowing a gas containing an inert gas onto the substrate to be processed, the drying process is not adversely affected by the chemical solution treatment, and the design is performed. The degree of freedom is high, the speed of the cleaning process can be increased, the size of the apparatus can be further reduced, and the drying process can be performed more efficiently.

According to the cleaning method of the present invention, (a) a step of immersing a substrate to be processed in a processing tank in which a processing liquid is stored;
(B) transferring the substrate to be processed from the processing tank through an opening that can be opened and closed to a drying chamber disposed above the processing tank; and (c) supplying an inert gas to the processing substrate. Since the method includes the step of spraying the gas containing and the step (d) of closing the opening, there is no adverse effect of the chemical solution treatment during the drying treatment, the degree of freedom in design is high, and the speed of the cleaning treatment can be increased. The size of the apparatus can be further reduced, and the drying process can be performed more efficiently.

Further, if the drying chamber is previously set in an atmosphere of an organic solvent before the step (b), the drying process can be performed more efficiently.

Further, if the step of supplying a gas containing an organic solvent into the processing tank is performed before the step (b), the drying process can be performed more efficiently.

[Brief description of the drawings]

FIG. 1 is a perspective view of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view of the cleaning apparatus shown in FIG.

FIG. 3 is a vertical sectional front view of the cleaning apparatus in the cleaning apparatus shown in FIG. 1;

FIG. 4 is a vertical sectional side view of the cleaning device shown in FIG. 3;

5 is a perspective view of the cleaning device shown in FIG.

FIG. 6 is a perspective view showing the vicinity of an upper lid of the cleaning device shown in FIG. 3;

FIG. 7 is a diagram showing a schematic configuration of a lid driving unit of the cleaning device shown in FIG. 3;

8 is a perspective view showing a sliding door mechanism of the cleaning device shown in FIG.

9 is a perspective view showing a wafer guide of the cleaning apparatus shown in FIG.

10 is a perspective view showing a nozzle and a discharge port of the cleaning device shown in FIG.

FIG. 11 is a view for explaining the operation of the current plate of the cleaning device shown in FIG. 3;

FIG. 12 is a processing flow showing the operation of the cleaning apparatus shown in FIG. 3;

FIG. 13 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1201 in FIG. 12).

FIG. 14 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1202 in FIG. 12).

FIG. 15 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1203 in FIG. 12).

FIG. 16 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1204 in FIG. 12).

17 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1205 in FIG. 12).

18 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to steps 1206 to 1208 in FIG. 12).

FIG. 19 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1209 in FIG. 12).

20 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1210 in FIG. 12).

21 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1211 in FIG. 12).

FIG. 22 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1212 in FIG. 12).

FIG. 23 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1213 in FIG. 12).

24 is a schematic view showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1214 in FIG. 12).

25 is a schematic diagram showing the operation of the cleaning apparatus shown in FIG. 3 (corresponding to step 1215 in FIG. 12).

FIG. 26 is a schematic view showing a conventional cleaning device.

[Explanation of symbols]

 27 Cleaning Device 41 Cleaning Tank 42 Drying Chamber 42 Wafer Guide 44, 45 Nozzle 61 Opening Upper Drying Chamber 62 Opening Lower Drying Chamber 63 Lid 64 Slide Door Mechanism 66 Lid Driver 72 Slide Doors 85, 86 Nozzles 98, 99 Discharge ports 101, 102 Rectifier plates 103, 104 Panel heaters 106, 107 Nozzles

Claims (14)

[Claims] 1. A processing tank for storing a processing liquid and a substrate to be processed being immersed in the stored processing liquid; and a processing tank disposed above the processing tank for transferring the processing substrate between the processing tank and the processing tank. A drying chamber having an openable and closable opening; transfer means for transferring a substrate to be processed between the processing tank and the drying chamber through the opening; A gas blowing means for blowing a gas containing an inert gas to the substrate. 2. The cleaning apparatus according to claim 1, wherein a gas containing an inert gas is disposed between the processing tank and the drying chamber, and the substrate to be processed is transferred from the processing tank to the drying chamber. A cleaning device, further comprising a spraying unit. 3. The cleaning apparatus according to claim 1, further comprising a heating unit disposed in the drying chamber. 4. The cleaning apparatus according to claim 1, wherein the gas blowing unit blows a gas containing an inert gas onto the substrate to be processed in a downflow state from an upper part of the drying chamber. The cleaning apparatus according to claim 1, further comprising a gas discharging means for discharging the gas blown from the gas blowing means from a discharge port provided at a lower part in the drying chamber. 5. The cleaning device according to claim 4, further comprising a rectifying means communicating with the discharge port and having a plurality of intake ports for taking in gas blown out from the gas blowing means from a lower portion in the drying chamber. A cleaning device comprising: 6. The cleaning device according to claim 1, wherein the inert gas is a nitrogen gas. 7. The cleaning apparatus according to claim 1, wherein the inert gas is a heated inert gas. 8. The cleaning apparatus according to claim 6, wherein the gas containing the inert gas is a mixed gas of an organic solvent and an inert gas. 9. The cleaning apparatus according to claim 6, wherein the gas containing the inert gas is a mixed gas of an organic solvent and a heated inert gas. 10. The cleaning apparatus according to claim 1, wherein the processing liquid stored in the processing tank is a degassed rinsing liquid. 11. A process of: (a) immersing a substrate to be processed in a processing tank in which a processing liquid is stored; and (b) a step of opening and closing the drying chamber disposed above the processing tank through an opening that can be opened and closed. A step of transferring the substrate to be processed from the processing tank, (c) a step of closing the opening after transferring the substrate to the drying chamber, and (d) a gas containing an inert gas with respect to the substrate to be processed. Spraying step. 12. A step of immersing a substrate to be processed in a processing tank in which a processing liquid is stored, and the step of: b) opening and closing the drying chamber disposed above the processing tank through an opening which can be opened and closed. A step of transferring the substrate to be processed from the processing tank; (c) a step of blowing a gas containing an inert gas onto the substrate to be processed; and (d) a step of closing the opening. How to wash. 13. The cleaning method according to claim 11, wherein the drying chamber is previously set in an atmosphere of an organic solvent before the step (b). 14. The cleaning method according to claim 11, further comprising a step of supplying a gas containing an organic solvent into the processing tank before the step (b).