CN111780537A - Marangoni drying device applied to wafer post-processing - Google Patents

Marangoni drying device applied to wafer post-processing Download PDF

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Publication number
CN111780537A
CN111780537A CN202010663532.9A CN202010663532A CN111780537A CN 111780537 A CN111780537 A CN 111780537A CN 202010663532 A CN202010663532 A CN 202010663532A CN 111780537 A CN111780537 A CN 111780537A
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China
Prior art keywords
wafer
gas
rod
air injection
injection rod
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CN202010663532.9A
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Chinese (zh)
Inventor
赵德文
申兵兵
李长坤
路新春
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Huahaiqingke Co Ltd
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Huahaiqingke Co Ltd
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Priority to CN202010663532.9A priority Critical patent/CN111780537A/en
Publication of CN111780537A publication Critical patent/CN111780537A/en
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B15/00—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form
    • F26B15/10—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions
    • F26B15/20—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions the lines being all vertical or steeply inclined
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a marangoni drying device applied to wafer post-processing, which comprises: the wafer cleaning device comprises a first gas spraying rod, a first rotation driving module, a second gas spraying rod and a second rotation driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to the first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface; the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected by the first gas injection rod to the meniscus of the first surface of the wafer and the concentration of the drying gas injected by the second gas injection rod to the meniscus of the second surface of the wafer are different by a proportion of no more than 20%.

Description

Marangoni drying device applied to wafer post-processing
Technical Field
The invention relates to the technical field of chemical mechanical polishing post-treatment, in particular to a Marangoni drying device applied to wafer post-treatment.
Background
Chemical Mechanical Polishing (CMP) is an ultra-precise surface processing technique for obtaining global Planarization in the fabrication of Integrated Circuits (ICs). With the development of integrated circuit manufacturing technology, the control of the defects on the surface of the wafer is more and more strict. During the wafer manufacturing process, the surface of the wafer may absorb contaminants such as particles or organic substances to generate a large number of defects, which require a post-treatment process to remove.
Particularly, since chemicals and abrasives used in a large amount in chemical mechanical polishing cause contamination of a wafer surface, a post-treatment process is introduced after polishing to remove the contamination of the wafer surface, and the post-treatment process generally consists of cleaning and drying to provide a smooth and clean wafer surface.
The purpose of cleaning is to remove particles and various chemicals from the surface of the wafer and avoid corrosion and damage to the surface and internal structures during the cleaning process, and the current common wet cleaning is to clean the wafer in a solution environment, such as soaking with a cleaning agent, mechanical scrubbing, wet chemical cleaning, and the like.
After cleaning, the wafer surface may retain a lot of water or residues of the cleaning solution. Since impurities are dissolved in the water or the residues of the cleaning solution, if the residual liquid is allowed to evaporate and dry, the impurities will adhere to the surface of the wafer again, causing contamination and even destroying the structure of the wafer. For this reason, the wafer surface needs to be dried to remove these residual liquids. In the traditional rotary drying mode, the thickness of the residual water film after drying is very large and can reach micron level or above, so that the water mark defect is easily caused.
In conclusion, the prior art has the problems of poor wafer drying effect and easy residual liquid.
Disclosure of Invention
The embodiment of the invention provides a marangoni drying device applied to wafer post-processing, and aims to at least solve one of the technical problems in the prior art.
The marangoni drying device applied to wafer post-processing provided by the embodiment of the invention comprises:
the wafer cleaning device comprises a first gas spraying rod, a first rotation driving module, a second gas spraying rod and a second rotation driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to the first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface;
the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected to the meniscus of the first surface of the wafer by the first gas injection rod and the concentration of the drying gas injected to the meniscus of the second surface of the wafer by the second gas injection rod are different by a ratio of not more than 20%;
the distance between the outer side surface of the first air injection rod and the outer side surface of the second air injection rod is not less than 3 mm;
the first air injection rod and the second air injection rod are hollow air injection rods with the same structure, the vertical distance from the bottom ends of the air injection rods to the liquid level is 5-15 mm, and the horizontal distance from the end points, closest to the wafer, of the air injection rods to the wafer is 5-10 mm.
In one embodiment, the first air injection rod is higher than the second air injection rod in height, and the included angle theta between the connecting line direction between the axis of the first air injection rod and the axis of the second air injection rod and the horizontal direction satisfies 0 degrees < theta < 40 degrees, and preferably 0 degrees < theta < 20 degrees.
In one embodiment, the outer side of the first air injection rod is closest to the wafer and is at a vertical distance l from the first surface of the wafer1Satisfy 1mm<l1Less than or equal to 15mm, preferably 1.5mm<l1≤6mm。
In one embodiment, the outer side of the second air injection rod is closest to the vertical distance l from the second surface of the wafer2Satisfy 1mm<l2Less than or equal to 15mm, preferably 1.5mm<l2≤6mm。
In one embodiment, the gas injection direction of the first gas injection bar is at an angle of 10 ° to 80 ° with the horizontal direction, and the gas injection direction of the second gas injection bar is at an angle of 10 ° to 70 ° with the horizontal direction.
In one embodiment, the gas injection rod is provided with a plurality of gas injection holes for simultaneously injecting the drying gas or with elongated slits at intervals in a length direction.
In one embodiment, the diameter d of the gas injection holes1No more than 2mm, and the distance l between two adjacent gas injection holes3Not greater than 30 mm.
In one embodiment, the length l of the elongated slit4300mm to 400mm, and a width d2Not exceeding 1 mm.
The embodiment of the invention has the beneficial effects that: through reasonable structural layout and parameter setting, the dry gas with certain concentration is uniformly distributed near the three-phase contact line, the concentration of the dry gas near the three-phase contact line is improved, the symmetry of drying two surfaces of the wafer is improved, and the drying effect of the two surfaces of the wafer is enhanced.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic diagram of a wafer post-processing system according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a drying principle of a marangoni drying apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an air injection rod according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an air injection rod according to another embodiment of the present invention;
FIG. 5 shows the wafer lifting device lifting the wafer to a first position;
FIG. 6 shows the wafer lifting device lifting the wafer to a second position;
FIG. 7 shows the wafer lifting device lifting the wafer off the liquid surface;
fig. 8 is a schematic structural diagram illustrating a jacking mechanism according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a follower mechanism provided in an embodiment of the present invention;
fig. 10 is a schematic structural view of a clamping mechanism according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a wafer spacing device according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It should be understood that, unless otherwise specified, the following description of the embodiments of the present invention is made for the convenience of understanding, and the description is made in a natural state where relevant devices, apparatuses, components, etc. are originally at rest and no external control signals and driving forces are given.
Further, it is also noted that terms used herein such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, and the like, to denote orientation, are used merely for convenience of description to facilitate understanding of relative positions or orientations, and are not intended to limit the orientation of any device or structure.
First, a wafer post-processing system according to an embodiment of the invention will be described with reference to fig. 1. As shown in fig. 1, the wafer post-processing system includes a cleaning tank 1, a liquid spraying device 2, a marangoni drying device 3, a wafer supporting device 4, a wafer lifting device 5, and a wafer limiting device 6.
The cleaning tank 1 is used for containing liquid for cleaning the wafer. The liquid may be deionized water.
The liquid spraying device 2 is arranged at the upper part of the cleaning tank 1 and is positioned below the liquid level in the cleaning tank 1, and is used for spraying liquid to the surface of the wafer to flush the wafer in the process that the wafer moves downwards and is immersed in the liquid; specifically, the liquid shower 2 includes a pair of opposing shower pipes defining a first port 11 therebetween.
And the Marangoni drying device 3 is parallel to the liquid spraying device 2, is arranged at the upper part of the cleaning tank 1, is positioned above the liquid level in the cleaning tank 1, and is used for spraying a drying gas to a meniscus area attached to the surface of the wafer in the process of lifting the wafer from the liquid so as to peel attachments on the surface of the wafer from the surface of the wafer in the direction opposite to the lifting direction by utilizing the Marangoni (Marangoni) effect and dry the surface of the wafer. In particular, the marangoni drying device 3 comprises a pair of opposed air bars defining a second port 12 therebetween.
And a wafer supporting device 4 installed below the inside of the cleaning tank 1 for supporting the wafer and swinging between a first orientation and a second orientation to receive the wafer entering the cleaning tank 1 through the first port 11 in the first orientation and to move the wafer out of the cleaning tank 1 through the second port 12 in the second orientation.
A wafer lifting device 5 for lifting the wafer immersed therein from the liquid in a second orientation.
And a wafer limiting device 6 (not shown in fig. 1) installed inside the cleaning tank 1 and used for limiting the two sides of the wafer under the liquid surface during the process that the wafer rises along the second orientation.
As shown in fig. 1, in one embodiment, a pair of shower pipes of the liquid shower apparatus 2 are provided in the upper portion of the cleaning tank 1 below the liquid level in the cleaning tank 1, and each shower pipe is provided with a plurality of nozzles as a set. When the manipulator puts the wafer into the cleaning tank 1 through the first port 11 along a first direction, two groups of nozzles of the two spray water pipes spray water to two surfaces of the wafer relatively so as to wash the wafer.
As shown in fig. 2, in one embodiment, the marangoni drying apparatus 3 includes:
the wafer cleaning device comprises a first gas spray rod 31 and a second gas spray rod 32, wherein the first gas spray rod 31 is used for spraying dry gas to a meniscus attached to a first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface, and the second gas spray rod 32 is used for spraying dry gas to the meniscus attached to a second surface of the wafer, wherein the meniscus is a gas-liquid-solid three-phase boundary area;
the first and second gas injection bars 31 and 32 are located at different heights such that the concentration of the drying gas injected from the first gas injection bar 31 to the meniscus of the first surface of the wafer differs from the concentration of the drying gas injected from the second gas injection bar 32 to the meniscus of the second surface of the wafer by no more than 20%.
In another embodiment, the marangoni drying device 3 further comprises: a first rotation driving module (not shown) for driving the first air injection bar 31 to rotate about its axial direction and a second rotation driving module (not shown) for driving the second air injection bar 32 to rotate about its axial direction.
As shown in fig. 2, the liquid rises along the surface of the wafer due to the wetting action of the liquid, and the contact liquid level at the intersection of the gas (air), the liquid (cleaning liquid) and the solid (wafer) presents a meniscus, i.e., a meniscus, in a concave shape under the action of the surface tension of the liquid. When the wafer is pulled out from the liquid surface at a constant speed, the marangoni drying device 3 sprays dry gas to the meniscus region where the liquid is attached to the surface of the wafer, so that the marangoni effect is induced to generate, the liquid is stripped off the surface of the wafer downwards, and pollutants are taken away, thereby realizing the drying of the surface of the wafer. Wherein the drying gas may be an organic vapor having surface activity such as IPA vapor.
As shown in fig. 2, the first air injection rod 31 and the second air injection rod 32 are located on two sides of the wafer, and the first surface and the second surface are two opposite surfaces of the wafer respectively, specifically, the first surface is a front surface of the wafer on which electronic circuit devices are formed, the second surface is a back surface of the wafer on which no devices are laid, and when the wafer is tilted up, the first surface faces upward, and the second surface faces downward. The first and second gas injection bars 31 and 32 are simultaneously operated to simultaneously inject dry gas to meniscus regions of both opposite surfaces of the wafer during the lifting of the wafer from the liquid, thereby peeling off the attachments of both surfaces of the wafer from the surface of the wafer in a direction opposite to the lifting direction. The embodiment achieves simultaneous drying of both opposite surfaces of the wafer during wafer lifting by the first and second air- jet bars 31 and 32.
It can be understood that when the configuration of the structural parameters of the drying device is not reasonable, the concentration distribution of the drying gas near the three-phase contact line may be uneven, for example, the concentration of the gas near the gas injection holes is extremely high and the concentration of the gas far away from the gas injection holes is extremely low, thereby causing inconsistent drying effect at different areas on the surface of the wafer; alternatively, the concentration of the drying gas sprayed on the surface of the wafer may be low, and the drying effect may be reduced. This embodiment makes the dry gas evenly distributed of certain concentration near three-phase contact line through reasonable structural layout and parameter setting, has improved near three-phase contact line's dry gas concentration, has improved simultaneously and has carried out dry symmetry to two surfaces of wafer, has strengthened the drying effect on wafer two sides.
The first air injection rod 31 is connected with a first rotation driving module to enable the first rotation driving module to rotate around the axis direction of the first air injection rod at a preset angular velocity, and the second air injection rod 32 is connected with a second rotation driving module to enable the second rotation driving module to rotate around the axis direction of the second air injection rod at a preset angular velocity, so that the injected air moves along with the meniscus. The angle between the gas injection direction of the first gas injection rod 31 and the horizontal direction is 10 ° to 80 °. The angle between the gas injection direction of the second gas injection rod 32 and the horizontal direction is 10 ° to 70 °.
As shown in fig. 2, since the wafer is in an inclined state during the rising process, in order to make the first and second air injection bars 31 and 32 approximately symmetrical with respect to the wafer and make the concentrations of the air flows injected from the two air injection bars onto the two opposite surfaces of the wafer close to each other, the height of the first air injection bar 31 needs to be higher than that of the second air injection bar 32. Specifically, the angle θ between the direction of the line connecting the axial center of the first air injection rod 31 and the axial center of the second air injection rod 32 and the horizontal direction satisfies 0 ° < θ ≦ 40 °, preferably 0 ° < θ ≦ 20 °.
It can be understood that when the wafer is lifted, the wafer may slightly shake due to the connection process between the lifting mechanism 51 and the clamping mechanism 53, in order to avoid the risk of wafer fragments caused by wafer collision due to wafer shaking, a certain safety distance should be kept between the first air injection rod 31 and the second air injection rod 32, and in addition, since the wafer is inclined during the lifting process, and the air injection distance between the air injection rods and the wafer should be ensured within a certain range, a certain space should be provided between the two air injection rods to allow the wafer to pass between the two air injection rods. Specifically, the distance of the outer side surface of the first air injection bar 31 from the outer side surface of the second air injection bar 32 should be not less than 3 mm.
In one embodiment, the outer side of the first gas injection rod 31 is closest to the wafer and is at a vertical distance l from the first surface of the wafer1Satisfy 1mm<l1Less than or equal to 15mm, preferably 1.5mm<l1≤6mm。
In one embodiment, the outer side of the second gas injection bar 32 is closest to the wafer at a vertical distance l from the second surface of the wafer2Satisfy 1mm<l2Less than or equal to 15mm, preferably 1.5mm<l2≤6mm。
Since the gas concentration sprayed from the gas spraying bar to the wafer surface is too low to generate the marangoni effect when the gas spraying bar is too far away from the wafer1And l2Not more than 15mm to improve the drying effect of the wafer.
In one embodiment, the first and second air injection bars 31 and 32 are hollow air injection bars having the same structure. The first and second gas injection bars 31 and 32 are respectively connected to a gas supply source for supplying a dry gas through a pipe, the dry gas flows into the hollow portion of the gas injection bars through gas inlets of the gas injection bars, and the magnitudes of the gas flows into the first and second gas injection bars 31 and 32 are substantially the same.
As shown in fig. 3, in one embodiment, a plurality of gas injection holes 33 for simultaneously injecting the dry gas are provided at intervals in a length direction of the gas injection rod in communication with the hollow portion, and the dry gas is injected outward through the gas injection holes 33. The plurality of gas injection holes 33 simultaneously inject the drying gas to form a curtain to inject the meniscus region through the curtain to dry the wafer.
Wherein, the length of the air injection rod is greater than the diameter of the wafer. The diameter of the air injection rod is 12mm, the vertical distance from the bottom end of the air injection rod to the liquid level is 5-15 mm, and the horizontal distance from the end point nearest to the wafer is 5mmTo 10 mm. The total flow of gas into the two gas injection bars is 5 to 50L/min. The gas injection holes 33 are at an angle in the range of 10 to 50 degrees to the horizontal plane. Diameter d of the gas injection hole 331Not more than 2mm, the distance l between two adjacent gas injection holes 333Not greater than 30 mm.
In particular, the gas injection holes 33 may adopt a diameter d1Circular holes of 0.1 to 0.5mm, preferably 0.1 mm. The distance between two adjacent gas injection holes 33 is 2 to 10mm, preferably 5 mm.
In another embodiment, as shown in fig. 4, the air injection bar is provided with an elongated slit 34 communicating with the hollow portion, and the dry gas is injected outwardly through the elongated slit 34. The elongated slots 34 spray the drying gas to form a curtain of air to spray the meniscus region through the curtain to dry the wafer.
Wherein the length l of the elongated slit 344300mm to 400mm, and a width d2Not exceeding 1 mm. In particular, the elongated slit 34 extends in a horizontal direction with a length l4Can be larger than the diameter of the wafer and the width d2May be 0.1 to 0.5mm, preferably 0.1 mm.
As shown in fig. 5, in one embodiment, the wafer support apparatus 4 includes a wafer carrier 41 and a yaw drive mechanism 42 for driving the wafer carrier 41 to oscillate between a first orientation and a second orientation. In the example shown in fig. 5, at least the wafer carrier 41 is mounted in the cleaning tank 1, and the yaw driving mechanism 42 is at least partially mounted outside the cleaning tank 1. Wafer carrier 41 may have at least two orientations (alignment), a first orientation that is aligned with first port 11 of cleaning tank 1 and a second orientation that is aligned with second port 12. The wafer carrier 41 may comprise an arcuate bracket, and the arcuate bracket preferably has a profile that forms an arc of 90-180. The yaw driving mechanism 42 includes a swing shaft that rotates by the drive of the wafer tilt driving motor, and an arcuate bracket arm connected to the swing shaft to swing with the swing shaft.
After the robot arm places the wafer on the arcuate bracket in the first orientation, the swing shaft, the arcuate bracket and the wafer are controlled by the wafer tilt drive motor to swing to a second orientation to orient the wafer toward the second port 12.
As shown in fig. 5 to 7, in one embodiment, the wafer lifting apparatus 5 includes:
the jacking mechanism 51 is used for supporting the bottom end of the wafer in the liquid to lift;
the follow-up mechanism 52 is used for abutting against the wafer drying edge on the liquid surface when the jacking mechanism 51 lifts the wafer to the first position and moving along with the wafer to position the wafer;
the clamping mechanism 53 is used for clamping two sides of the wafer drying edge above the liquid level to continuously lift the wafer until the wafer is separated from the liquid level when the jacking mechanism 51 and the follow-up mechanism 52 cooperate to lift the wafer to the second position;
wherein the lift-up mechanism 51 stops lifting to disengage the wafer after the wafer is clamped by the clamping mechanism 53, and the second position is higher than the first position.
As shown in fig. 5, the wafer is lifted by the lift-off mechanism 51 in the second orientation, and the two drying bars of the marangoni drying apparatus 3 dry the surface of the wafer as it passes through the second port 12. When the lifting mechanism 51 lifts the wafer to the first position, the drying edge on the upper side of the wafer is abutted against the follow-up mechanism 52, so that the follow-up mechanism 52 and the lifting mechanism 51 form a plurality of supporting points with the wafer respectively above and below, the two mechanisms are matched with each other to clamp the wafer to lift, and the stability is improved. As shown in fig. 5, the first position is where the wafer is partially above the gas stick and below the gas stick in at least the area of its diameter 2/3.
As shown in fig. 6, when the wafer is lifted to the second position by the cooperative movement of the lift-up mechanism 51 and the follower mechanism 52, the clamping mechanism 53 clamps the two sides of the dry edge of the wafer above the liquid level to continue lifting the wafer until the wafer is separated from the liquid level. As shown in fig. 6, the second position is where the wafer is above the gas jet bar at least over its diameter 1/2.
As shown in fig. 7, after the clamping mechanism 53 clamps the wafer, the lift-up mechanism 51 stops lifting and is separated from the wafer, and the clamping mechanism 53 and the follower mechanism 52 move in cooperation to drive the wafer to continue lifting.
As shown in fig. 8, the lift mechanism 51 includes a lift member 511 abutting against the bottom end of the wafer, a lift rod 512 holding the lift member 511, and a lift linear module 513 connected to the lift rod 512.
In one embodiment, the lift piece 511 includes a groove formed on an upper surface thereof for receiving a bottom edge of the wafer, and a through hole formed through the groove and a bottom surface of the lift piece 511 to prevent impurities from being deposited in the groove.
As shown in fig. 9, the following mechanism 52 includes a guide rail 521, a U-shaped following rod 522, a positioning seat 523 and a limit buffer 524; the U-shaped follower rod 522 is connected to the guide rail 521, and two ends of the U-shaped follower rod are respectively provided with a positioning seat 523 for abutting against the wafer, and the limiting buffer 524 is arranged at the bottom end of the guide rail 521. The follower mechanism 52 is at least partially disposed above the cleaning tank 1.
As shown in fig. 10, the clamping mechanism 53 includes a first clamping member 531, a second clamping member 532, a clamping driving module 533 and a pull straight line module 534, the first clamping member 531 and the second clamping member 532 are disposed opposite to each other to clamp the wafer, the clamping driving module 533 is respectively connected to the first clamping member 531 and the second clamping member 532 to synchronously drive the first clamping member 531 and the second clamping member 532 to move towards each other or move away from each other, and the clamping driving module 533 is connected to the pull straight line module 534.
Fig. 11 is an internal perspective view of the cleaning tank 1 with the front panel removed. As shown in fig. 11, the wafer stopper 6 is used for the wafer to obliquely ride thereon when the wafer carrier 41 swings to the second orientation with the wafer carried thereon. The wafer limiting device 6 comprises two downwardly extending cushion blocks 61 fixed on the inner side wall of the cleaning tank 1 and respectively located at two ends, wherein the two cushion blocks 61 are respectively located at the left end and the right end so as to respectively clamp the edges of the left side and the right side of the wafer when the wafer is inclined. The edge of the pad 61 that contacts the wafer is provided with a notch 62 along the length of the pad 61, and the notch 62 is used for enabling the edge of the wafer to be lapped on the wafer when the wafer is inclined along the second orientation.
In one embodiment, as shown in FIG. 11, the wafer restraint device 6 is integrally formed with the cleaning tank 1. Specifically, the pad block 61 is integrally formed with the side wall of the cleaning tank 1.
The width of the bottom surface of the notch 62 for mounting the wafer is reduced from bottom to top. Since the position of the wafer falling on the notch 62 may be not fixed and may be shifted when the wafer is on the wafer carrier 41 and tilted by swinging, the bottom surface under the notch 62 is provided with a large width to receive the wafer falling from different positions. After the wafer is lifted by the jacking mechanism 51, the notch 62 gradually narrowed from bottom to top can gradually adjust the wafer to the middle position so that the follow-up mechanism 52 and the clamping mechanism 53 can accurately fix the wafer, the phenomenon that the wafer is broken due to uneven stress caused by clamping dislocation is avoided, and the overall stability is improved.
The bottom surface of the notch 62 located on the upper side has a narrowest width of not more than 3mm, and the bottom surface located on the lower side has a widest width of not less than 5 mm.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (8)

1. A marangoni drying device applied to wafer post-processing is characterized by comprising:
the wafer cleaning device comprises a first gas spraying rod, a first rotary driving module, a second gas spraying rod and a second rotary driving module, wherein the first gas spraying rod is used for spraying dry gas to a meniscus attached to a first surface of a wafer in the process that the wafer is obliquely lifted from a cleaning liquid surface, the first rotary driving module is used for driving the first gas spraying rod to rotate around the axial direction of the first gas spraying rod, the second gas spraying rod is used for spraying dry gas to the meniscus attached to a second surface of the wafer, the second rotary driving module is used for driving the second gas spraying rod to rotate around the axial direction of the second gas spraying rod, and the meniscus is a gas-liquid-solid;
the first gas injection rod and the second gas injection rod are positioned at different heights so that the concentration of the drying gas injected to the meniscus of the first surface of the wafer by the first gas injection rod and the concentration of the drying gas injected to the meniscus of the second surface of the wafer by the second gas injection rod are different by a ratio of not more than 20%;
the distance between the outer side surface of the first air injection rod and the outer side surface of the second air injection rod is not less than 3 mm;
the first air injection rod and the second air injection rod are hollow air injection rods with the same structure, the vertical distance from the bottom ends of the air injection rods to the liquid level is 5-15 mm, and the horizontal distance from the end points, closest to the wafer, of the air injection rods to the wafer is 5-10 mm.
2. The marangoni drying device of claim 1, wherein the first air injection rod is higher than the second air injection rod in position, and an included angle θ between a connecting line direction between the axis of the first air injection rod and the axis of the second air injection rod and a horizontal direction satisfies 0 ° < θ ≦ 40 °.
3. The marangoni drying apparatus of claim 2, wherein the first air jet bar has an outer side surface closest to the wafer at a vertical distance l from the first surface of the wafer1Satisfy 1mm<l1≤15mm。
4. The marangoni drying apparatus of claim 3, wherein the second air jet bar has an outer side surface closest to the wafer at a vertical distance l from the second surface of the wafer2Satisfy the requirement of1mm<l2≤15mm。
5. The marangoni drying apparatus of claim 4, wherein an angle between a gas ejection direction of the first gas ejection rod and a horizontal direction is 10 ° to 80 °, and an angle between a gas ejection direction of the second gas ejection rod and the horizontal direction is 10 ° to 70 °.
6. A marangoni drying apparatus according to claim 2, wherein the gas injection bar is provided with a plurality of gas injection holes for injecting the drying gas simultaneously or with elongated slits at intervals in a length direction.
7. A marangoni drying apparatus as claimed in claim 6, wherein the diameter d of the gas injection holes is such that1No more than 2mm, and the distance l between two adjacent gas injection holes3Not greater than 30 mm.
8. A marangoni drying apparatus as claimed in claim 6, wherein the elongate slot has a length l4300mm to 400mm, and a width d2Not exceeding 1 mm.
CN202010663532.9A 2020-07-10 2020-07-10 Marangoni drying device applied to wafer post-processing Pending CN111780537A (en)

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