US20090078292A1 - Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife - Google Patents
Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife Download PDFInfo
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- US20090078292A1 US20090078292A1 US12/249,960 US24996008A US2009078292A1 US 20090078292 A1 US20090078292 A1 US 20090078292A1 US 24996008 A US24996008 A US 24996008A US 2009078292 A1 US2009078292 A1 US 2009078292A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Definitions
- This invention is concerned with semiconductor manufacturing and is more particularly concerned with techniques for drying a substrate.
- a substrate is raised in a vertical orientation from a fluid bath, and an alcohol vapor is delivered to a meniscus that is formed at the substrate/fluid interface.
- the alcohol vapor reduces the surface tension at the meniscus, thereby creating a “Marangoni” force resulting in a downward liquid flow opposite to the substrate lift direction.
- the substrate surface above the meniscus is dried.
- Marangoni drying is promising in terms of substrate throughput, absence of water marks, and low contamination levels achieved. However, it would be desirable to achieve comparable results without the inconveniences of delivering and exhausting hazardous alcohol vapor.
- a method of drying a substrate includes raising the substrate out of a fluid bath. During the raising step, an air-knife is applied to a meniscus formed at an interface between the substrate and the surface of the bath.
- an air-knife is not limited to using atmospheric air, but rather may use any suitable gas, including, for example, an inert gas such as nitrogen or argon.
- a method of drying a substrate includes (1) setting a gas delivery angle for an air knife used during an immersion-drying process; (2) using the air knife during immersion drying of a hydrophilic substrate; and (3) using the air knife during immersion drying of a hydrophobic substrate.
- the gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate.
- a meniscus of rinsing fluid may be formed on a substrate via a plurality of spray nozzles, rather than via immersion in a bath.
- a rinsing fluid may be sprayed across the horizontal diameter of a vertically oriented substrate as it leaves a vertically oriented scrubber.
- An air knife may be applied at the meniscus or upper boundary of the rinsing fluid on the substrate, to thereby dry the substrate.
- FIG. 1 is a schematic side view illustrating the inventive apparatus and method
- FIG. 2 is a flow chart that illustrates a method of operating the apparatus of FIG. 1 ;
- FIG. 3 is a schematic front elevational view of a scrubber that may employ an air knife.
- FIG. 1 is a schematic side view of a vertical single wafer immersion drying apparatus 11 configured in accordance with the present invention.
- the inventive immersion drying apparatus 11 includes a tank schematically represented at reference numeral 13 .
- the tank 13 contains a fluid bath 15 constituted by a rinsing fluid 17 such as deionized water, a solution of a corrosion inhibitor such as BTA (benzotriazole) or the like.
- a substrate 19 that is being dried in the inventive apparatus 11 is shown being raised in a substantially vertical orientation from the fluid bath 15 .
- the substrate 19 may be, for example, a silicon wafer.
- a substrate raising mechanism schematically represented by an arrow 21 is provided to raise the substrate 19 from the fluid bath 15 .
- the substrate 19 has a front side 23 on which one or more material layers have been and/or will be formed.
- the substrate 19 also has a back side 25 that is opposed to the front side 23 .
- a first meniscus 27 of the fluid 17 is formed at an interface 29 between the front side 23 of the substrate 19 and a surface 31 of the fluid 17 .
- a second meniscus 33 is also formed at an interface 35 between the back side 25 of the substrate 19 and the fluid surface 31 .
- a first air-knife is applied to the meniscus 27 at the front side 23 of the substrate 19 .
- the first air-knife 37 a prevents the fluid 17 at the meniscus 27 from advancing upwardly with the front side 23 of the substrate 19 as the substrate 19 is raised, thereby drying the substrate 19 .
- the first air-knife 37 a is applied at an angle 39 which is inclined downwardly from a horizontal plane 41 .
- the angle 39 will be referred to as a “gas delivery angle”.
- the gas delivery angle may, for example, be in the range of 13°-30°, depending on the type of film formed on the substrate 19 . Other gas delivery angles may be employed.
- a second air-knife 37 b may be applied to the meniscus 33 at the back side 25 of the substrate 19 , to aid in drying the back side 25 of the substrate 19 .
- the back side gas delivery angle may, but need not, be different from the front side gas delivery angle.
- a different gas delivery angle may be preferred for the back side if the surfaces on the two sides have different characteristics.
- One advantage of the inventive immersion drying apparatus 11 including an air-knife applied to the fluid meniscus is that the same gas delivery angle 39 may be used in connection with drying both substrates having a hydrophilic film (e.g., TEOS) thereon and also with substrates having a hydrophobic film (e.g., a low k dielectric) thereon.
- a hydrophilic film e.g., TEOS
- a hydrophobic film e.g., a low k dielectric
- the action of the air-knife 37 a shortens or deforms the meniscus formed on the hydrophilic film so that drying may occur at substantially the same point above the fluid surface 31 as in the case of a substrate having a hydrophobic film thereon.
- the air-knife 37 a may be implemented by means of a nozzle (e.g., a spray tube; not separately shown) of the same type as the gas delivery spray tubes disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001.
- a suitable gas supply (not shown) is coupled to the nozzle.
- the gas employed is nitrogen (N 2 ) although other gases may be used.
- a nozzle tube having a perforated length of about 8.5 inches (which may be used, for example, in drying a 200 millimeter wafer) and having 114 holes of 0.005-0.007 inches in diameter, uniformly distributed along the perforated length of the nozzle tube may be used.
- the holes preferably should all be colinear and have the same orientation.
- the nozzle tube may be formed of stainless steel, quartz, or another suitable material. Other configurations may be employed.
- a gas flow rate of 15 liters per minute may be employed. Higher or lower gas flow rates could also be employed. For example, gas flow rates in the range of 10-30 liters/minute are specifically contemplated.
- a gas delivery angle of 15° was found to be suitable for both hydrophilic and hydrophobic wafer surfaces. It is believed that this angle would also be appropriate for a patterned wafer surface having both hydrophilic and hydrophobic features. Further, it has been found that gas delivery angles in the range of 10°-20° may be preferred for drying a wafer having a hydrophilic film (TEOS).
- TEOS hydrophilic film
- the substrate 19 was raised while being inclined away from the front side air-knife nozzle tube at an angle of 9° from the vertical.
- the direction of motion of the substrate was in the inclined plane defined by the substrate, as in the immersion tank disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001.
- the cross-sectional center of the nozzle tube was a distance of 0.36 inches above the fluid surface, and at a perpendicular distance from the wafer surface of 0.63 inches for the front-side nozzle.
- the perpendicular distance to the wafer was 0.51 inches.
- the speed of raising the substrate was 2.5 millimeters per second.
- satisfactory results have also been obtained with a speed of raising the substrate of 10 millimeters per second.
- FIG. 2 is a flow chart that illustrates a method of operating the apparatus of FIG. 1 .
- the gas delivery angle is set (e.g., at 15°).
- the setting of the gas delivery angle may be performed, for example, by fixedly mounting an air knife 37 a and/or 37 b (e.g., one or more nozzle tubes) relative to the tank 13 .
- each nozzle tube may be adjustably mounted relative to the tank 13 and may be manually or otherwise adjusted to set the gas delivery angle.
- one or more hydrophobic substrates i.e., substrates having a hydrophobic film on the front side thereof
- the gas delivery angle set at step 51 is set at step 53 .
- step 55 at which one or more hydrophilic substrates (i.e., substrates having a hydrophilic film on the front side thereof) are immersion-dried using an air-knife in accordance with the invention, with the gas delivery angle set at step 51 .
- one or more hydrophilic substrates i.e., substrates having a hydrophilic film on the front side thereof
- steps 53 and 55 may be reversed, and again it is not necessary to change the gas delivery angle between the two steps.
- the air-knife may be implemented using structure that is different from the nozzle tube described above.
- Gas flow rate may be varied and/or a gas other than nitrogen (N 2 ) may be employed.
- the present invention may be applied to drying a substrate having a different size and/or a different shape than a 200 mm wafer (e.g., a square or rectangular glass substrate such as employed for flat panel displays).
- the length of the nozzle tube may be varied as appropriate.
- the substrate may be raised at an angle other than 9° from the vertical, or may be raised without inclination (i.e., at 90° from the horizontal).
- the air-knife/nozzle tube may be arranged so that the gas delivery angle is adjustable by, e.g., manual adjustment.
- An alcohol vapor e.g., isopropyl alcohol vapor
- another gas or vapor that serves to lower the surface tension of the rinsing fluid i.e., a Marangoni drying gas
- a Marangoni drying gas may be included in the gas dispensed by the air-knife nozzle tube (e.g., by the type of arrangement disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001) so that Marangoni effect drying is also employed in the inventive immersion drying apparatus.
- a separate Marangoni drying nozzle 43 a , 43 b (shown in phantom in FIG. 1 ) may be employed to supply Marangoni drying gas to a meniscus.
- the Marangoni drying nozzle 43 a , 43 b may be employed in addition to the air-knife 37 a , 37 b that manipulates the meniscus.
- consecutive drying of hydrophilic and hydrophobic surfaces may be employed without needing to adjust the position of the Marangoni drying nozzle 43 a , 43 b .
- the air-knife 37 a , 37 b manipulates the meniscus 27 , 33 to the same position for both hydrophilic and hydrophobic surfaces
- the Marangoni drying nozzle 43 a , 43 b may maintain the same position for drying of hydrophilic surfaces and hydrophobic surfaces. Accordingly, throughput may be increased and labor costs decreased.
- surfaces having both hydrophilic and hydrophobic portions may be dried with better results (e.g., fewer contaminants).
- FIG. 3 is a schematic front elevational view of a vertically oriented scrubber 101 , having a plurality of rollers 303 for supporting a substrate S.
- a front side and a back side scrubber brush 305 (only one shown) are positioned above the rollers 303 so as to contact the front and back sides of the substrate S positioned on the rollers 303 .
- a fluid spray nozzle 307 is positioned above the scrubber brushes 305
- an air knife nozzle 309 is positioned above the fluid spray nozzle 307 .
- An optional Marangoni drying nozzle 311 may be included.
- the substrate S After the substrate S is scrubbed it may be dried via the air knife nozzle 309 (with or without the aid of a Marangoni drying vapor supplied either via the air knife nozzle 309 or via the Marangoni drying nozzle 311 ) in the manner described above with reference to FIGS. 1 and 2 , as the substrate S is lifted from the rollers 303 (e.g., via a wafer handler or substrate pusher, not shown).
- the rinsing fluid nozzle 307 , the Marangoni drying nozzle 311 and the air knife nozzle 309 preferably are positioned above the upper perimeter of the substrate S when the substrate S is positioned on the rollers 303 . In this manner the entire substrate surface is lifted past the nozzles 307 - 311 .
- a second set of nozzles 307 - 311 may be similarly positioned along the back side of the substrate S.
- a substrate may be held at any orientation while being dried by an air knife.
- the present invention may be employed, for example, within a system similar to that described in previously incorporated U.S. Provisional Patent Application Ser. No. 60/335,335, filed Nov. 2, 2001 (Attorney Docket No. 5877/L), entitled “Single Wafer Immersion Dryer and Drying Methods” or within any other suitable system.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.
Description
- This application is a division of, and claims priority to, United States Non-Provisional patent application Ser. No. 10/461,889, filed Jun. 13, 2003, and titled, “SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE,” (Attorney Docket No. 7348) which claims priority to U.S. Provisional Patent Application Ser. No. 60/388,277, filed Jun. 13, 2002, and titled, “SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE.” (Attorney Docket No. 7348/L) Both of these patent applications are incorporated by reference herein in their entirety for all purposes.
- This invention is concerned with semiconductor manufacturing and is more particularly concerned with techniques for drying a substrate.
- It is known to process a semiconductor substrate to achieve a dry and low-contamination condition after processing steps such as chemical mechanical polishing (CMP) and scrubbing. It has also been proposed to employ immersion drying to semiconductor substrates using the so-called Marangoni effect. An example of a Marangoni dryer is disclosed in co-pending, commonly-owned U.S. provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001 (Attorney Docket No. 5877/L), entitled “Single Wafer Immersion Dryer and Drying Methods”, and which is hereby incorporated herein by reference in its entirety.
- In Marangoni drying, a substrate is raised in a vertical orientation from a fluid bath, and an alcohol vapor is delivered to a meniscus that is formed at the substrate/fluid interface. The alcohol vapor reduces the surface tension at the meniscus, thereby creating a “Marangoni” force resulting in a downward liquid flow opposite to the substrate lift direction. As a result, the substrate surface above the meniscus is dried.
- Marangoni drying is promising in terms of substrate throughput, absence of water marks, and low contamination levels achieved. However, it would be desirable to achieve comparable results without the inconveniences of delivering and exhausting hazardous alcohol vapor.
- According to an aspect of the invention, a method of drying a substrate is provided. The inventive method includes raising the substrate out of a fluid bath. During the raising step, an air-knife is applied to a meniscus formed at an interface between the substrate and the surface of the bath.
- As referred to herein, an air-knife is not limited to using atmospheric air, but rather may use any suitable gas, including, for example, an inert gas such as nitrogen or argon.
- In another aspect of the invention, a method of drying a substrate includes (1) setting a gas delivery angle for an air knife used during an immersion-drying process; (2) using the air knife during immersion drying of a hydrophilic substrate; and (3) using the air knife during immersion drying of a hydrophobic substrate. The gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate.
- It has been found that application of an air-knife to a fluid meniscus in conjunction with substrate immersion drying produces low contamination outcomes (e.g., with no water marks formed on hydrophobic substrates), matching the performance of Marangoni drying, with respect to absence of water marks and acceptable throughput, while avoiding the use of alcohol vapor.
- In a further aspect, a meniscus of rinsing fluid may be formed on a substrate via a plurality of spray nozzles, rather than via immersion in a bath. For example, a rinsing fluid may be sprayed across the horizontal diameter of a vertically oriented substrate as it leaves a vertically oriented scrubber. An air knife may be applied at the meniscus or upper boundary of the rinsing fluid on the substrate, to thereby dry the substrate.
- Other features and aspects of the present invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings.
-
FIG. 1 is a schematic side view illustrating the inventive apparatus and method; -
FIG. 2 is a flow chart that illustrates a method of operating the apparatus ofFIG. 1 ; and -
FIG. 3 is a schematic front elevational view of a scrubber that may employ an air knife. -
FIG. 1 is a schematic side view of a vertical single waferimmersion drying apparatus 11 configured in accordance with the present invention. For example, the principles of the present invention may be applied to an immersion drying apparatus of the type disclosed in the above-referenced co-pending U.S. provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001. The inventiveimmersion drying apparatus 11 includes a tank schematically represented atreference numeral 13. Thetank 13 contains afluid bath 15 constituted by a rinsingfluid 17 such as deionized water, a solution of a corrosion inhibitor such as BTA (benzotriazole) or the like. - A
substrate 19 that is being dried in theinventive apparatus 11 is shown being raised in a substantially vertical orientation from thefluid bath 15. Thesubstrate 19 may be, for example, a silicon wafer. A substrate raising mechanism schematically represented by anarrow 21 is provided to raise thesubstrate 19 from thefluid bath 15. - The
substrate 19 has afront side 23 on which one or more material layers have been and/or will be formed. Thesubstrate 19 also has aback side 25 that is opposed to thefront side 23. During raising of thesubstrate 19, afirst meniscus 27 of thefluid 17 is formed at aninterface 29 between thefront side 23 of thesubstrate 19 and asurface 31 of thefluid 17. Asecond meniscus 33 is also formed at aninterface 35 between theback side 25 of thesubstrate 19 and thefluid surface 31. - In accordance with the invention, a first air-knife, schematically indicated by an
arrow 37 a, is applied to themeniscus 27 at thefront side 23 of thesubstrate 19. The first air-knife 37 a prevents thefluid 17 at themeniscus 27 from advancing upwardly with thefront side 23 of thesubstrate 19 as thesubstrate 19 is raised, thereby drying thesubstrate 19. The first air-knife 37 a is applied at anangle 39 which is inclined downwardly from ahorizontal plane 41. Theangle 39 will be referred to as a “gas delivery angle”. The gas delivery angle may, for example, be in the range of 13°-30°, depending on the type of film formed on thesubstrate 19. Other gas delivery angles may be employed. - As shown, a second air-
knife 37 b may be applied to themeniscus 33 at theback side 25 of thesubstrate 19, to aid in drying theback side 25 of thesubstrate 19. The back side gas delivery angle may, but need not, be different from the front side gas delivery angle. A different gas delivery angle may be preferred for the back side if the surfaces on the two sides have different characteristics. However, it is also contemplated to embody theimmersion drying apparatus 11 with an air-knife only at the front side or back side of the substrate. - One advantage of the inventive
immersion drying apparatus 11 including an air-knife applied to the fluid meniscus is that the samegas delivery angle 39 may be used in connection with drying both substrates having a hydrophilic film (e.g., TEOS) thereon and also with substrates having a hydrophobic film (e.g., a low k dielectric) thereon. In the absence of the air-knife 37 a, themeniscus 27 in the case of thesubstrate 19 having the hydrophilic film thereon would extend higher above thesurface 31 of thefluid 17 than the meniscus formed with a substrate having a hydrophobic film thereon. However, the action of the air-knife 37 a shortens or deforms the meniscus formed on the hydrophilic film so that drying may occur at substantially the same point above thefluid surface 31 as in the case of a substrate having a hydrophobic film thereon. - In one embodiment of the invention, the air-
knife 37 a (or 37 b) may be implemented by means of a nozzle (e.g., a spray tube; not separately shown) of the same type as the gas delivery spray tubes disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001. In addition, a suitable gas supply (not shown) is coupled to the nozzle. In one embodiment of the invention, the gas employed is nitrogen (N2) although other gases may be used. - In a particular embodiment, a nozzle tube having a perforated length of about 8.5 inches (which may be used, for example, in drying a 200 millimeter wafer) and having 114 holes of 0.005-0.007 inches in diameter, uniformly distributed along the perforated length of the nozzle tube may be used. The holes preferably should all be colinear and have the same orientation. The nozzle tube may be formed of stainless steel, quartz, or another suitable material. Other configurations may be employed.
- With such a nozzle tube, a gas flow rate of 15 liters per minute may be employed. Higher or lower gas flow rates could also be employed. For example, gas flow rates in the range of 10-30 liters/minute are specifically contemplated. In one embodiment, a gas delivery angle of 15° was found to be suitable for both hydrophilic and hydrophobic wafer surfaces. It is believed that this angle would also be appropriate for a patterned wafer surface having both hydrophilic and hydrophobic features. Further, it has been found that gas delivery angles in the range of 10°-20° may be preferred for drying a wafer having a hydrophilic film (TEOS).
- In the same embodiment, the
substrate 19 was raised while being inclined away from the front side air-knife nozzle tube at an angle of 9° from the vertical. The direction of motion of the substrate was in the inclined plane defined by the substrate, as in the immersion tank disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001. - The cross-sectional center of the nozzle tube was a distance of 0.36 inches above the fluid surface, and at a perpendicular distance from the wafer surface of 0.63 inches for the front-side nozzle. For the back-side nozzle, the perpendicular distance to the wafer was 0.51 inches. In this same embodiment, the speed of raising the substrate was 2.5 millimeters per second. However, satisfactory results have also been obtained with a speed of raising the substrate of 10 millimeters per second. There may be, in general, a trade off between substrate-raising speed and number of contaminants after the drying process, with higher substrate-raising speeds possibly resulting in a greater number of contaminants.
-
FIG. 2 is a flow chart that illustrates a method of operating the apparatus ofFIG. 1 . Initially, instep 51, the gas delivery angle is set (e.g., at 15°). The setting of the gas delivery angle may be performed, for example, by fixedly mounting anair knife 37 a and/or 37 b (e.g., one or more nozzle tubes) relative to thetank 13. Alternatively, each nozzle tube may be adjustably mounted relative to thetank 13 and may be manually or otherwise adjusted to set the gas delivery angle. - Next, at
step 53, one or more hydrophobic substrates (i.e., substrates having a hydrophobic film on the front side thereof) are immersion-dried using an air-knife in accordance with the invention, with the gas delivery angle set atstep 51. - Following
step 53 isstep 55, at which one or more hydrophilic substrates (i.e., substrates having a hydrophilic film on the front side thereof) are immersion-dried using an air-knife in accordance with the invention, with the gas delivery angle set atstep 51. - It will be noted that the gas delivery angle is not changed between
steps - The order of
steps - The air-knife may be implemented using structure that is different from the nozzle tube described above. Gas flow rate may be varied and/or a gas other than nitrogen (N2) may be employed.
- The present invention may be applied to drying a substrate having a different size and/or a different shape than a 200 mm wafer (e.g., a square or rectangular glass substrate such as employed for flat panel displays). The length of the nozzle tube may be varied as appropriate.
- The substrate may be raised at an angle other than 9° from the vertical, or may be raised without inclination (i.e., at 90° from the horizontal).
- The air-knife/nozzle tube may be arranged so that the gas delivery angle is adjustable by, e.g., manual adjustment.
- An alcohol vapor (e.g., isopropyl alcohol vapor) or another gas or vapor that serves to lower the surface tension of the rinsing fluid (i.e., a Marangoni drying gas) may be included in the gas dispensed by the air-knife nozzle tube (e.g., by the type of arrangement disclosed in the above-referenced co-pending provisional patent application Ser. No. 60/335,335, filed Nov. 2, 2001) so that Marangoni effect drying is also employed in the inventive immersion drying apparatus. Alternatively, a separate
Marangoni drying nozzle FIG. 1 ) may be employed to supply Marangoni drying gas to a meniscus. TheMarangoni drying nozzle knife Marangoni drying nozzle knife meniscus Marangoni drying nozzle - Moreover, with use of the present invention (with or without application of a Marangoni drying gas) surfaces having both hydrophilic and hydrophobic portions (such as patterned semiconductor wafers) may be dried with better results (e.g., fewer contaminants).
- In a further aspect, the invention may be employed within a vertically oriented scrubber.
FIG. 3 is a schematic front elevational view of a vertically orientedscrubber 101, having a plurality ofrollers 303 for supporting a substrate S. A front side and a back side scrubber brush 305 (only one shown) are positioned above therollers 303 so as to contact the front and back sides of the substrate S positioned on therollers 303. Afluid spray nozzle 307 is positioned above the scrubber brushes 305, and anair knife nozzle 309 is positioned above thefluid spray nozzle 307. An optional Marangoni drying nozzle 311 (shown in phantom) may be included. After the substrate S is scrubbed it may be dried via the air knife nozzle 309 (with or without the aid of a Marangoni drying vapor supplied either via theair knife nozzle 309 or via the Marangoni drying nozzle 311) in the manner described above with reference toFIGS. 1 and 2 , as the substrate S is lifted from the rollers 303 (e.g., via a wafer handler or substrate pusher, not shown). Note that the rinsingfluid nozzle 307, theMarangoni drying nozzle 311 and theair knife nozzle 309 preferably are positioned above the upper perimeter of the substrate S when the substrate S is positioned on therollers 303. In this manner the entire substrate surface is lifted past the nozzles 307-311. A second set of nozzles 307-311 may be similarly positioned along the back side of the substrate S. - The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above disclosed apparatus and method which fall within the scope of the invention will be readily apparent to those of ordinary skill in the art. For instance, a substrate may be held at any orientation while being dried by an air knife. As stated, the present invention may be employed, for example, within a system similar to that described in previously incorporated U.S. Provisional Patent Application Ser. No. 60/335,335, filed Nov. 2, 2001 (Attorney Docket No. 5877/L), entitled “Single Wafer Immersion Dryer and Drying Methods” or within any other suitable system.
- Accordingly, while the present invention has been disclosed in connection with exemplary embodiments thereof, it should be understood that other embodiments may fall within the spirit and scope of the invention, as defined by the following claims.
Claims (20)
1. An apparatus comprising;
a chamber;
a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber;
a pair of brushes adapted to scrub a first and a second side of the wafer respectively;
a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and
a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber.
2. The apparatus of claim 2 , further comprising a wafer lift mechanism mounted in the chamber and adapted to lift the wafer at least partially out of the chamber.
3. The apparatus of claim 2 , wherein the wafer lift mechanism pushes the wafer upward through a spray output by the first spray bar.
4. The apparatus of claim 2 , further comprising a pair of wafer guides for guiding the wafer as the wafer is lifted by the wafer lift mechanism.
5. The apparatus of claim 1 , further comprising a cradle for moving the wafer from the vertical orientation to an inclined orientation.
6. The apparatus of claim 5 further comprising a pusher for pushing the wafer upward along an inclined path.
7. The apparatus of claim 6 wherein the first and second spray bars are positioned to output a spray onto the wafer as the wafer is lifted along the inclined path.
8. The apparatus of claim 6 further comprising a pair of wafer guides for guiding the wafer as the wafer is lifted upward along the inclined path.
9. The apparatus of claim 1 further comprising a mechanism for moving the wafer from a first position where the wafer is scrubbed by the pair of brushes, to a second position where the wafer will be impacted by spray from the first and second spray bars as the wafer is lifted from the chamber.
10. The apparatus of claim 1 wherein the second spray bar is adapted to direct the vapor at a gas delivery angle, wherein the angle is downwardly inclined from a horizontal plane.
11. The apparatus of claim 10 wherein the gas delivery angle is in the range of 13°-30°.
12. The apparatus of claim 11 wherein the gas delivery angle may be the same for substrates having one of a hydrophilic film and a hydrophobic film thereon.
13. The apparatus of claim 1 wherein the first and second spray bars are positioned above an upper perimeter of the substrate when the substrate is positioned on the plurality of rollers, such that an entire substrate surface is lifted past the first and second spray bars.
14. The apparatus of claim 1 wherein the second spray bar is adapted to spray the vapor at the meniscus formed on a first side of the substrate.
15. The apparatus of claim 14 further comprising a third spray bar, wherein the third spray bar is adapted to spray a vapor at the meniscus formed on a second side of the substrate.
16. The apparatus of claim 15 wherein the third spray bar is adapted to direct the vapor at a gas delivery angle, wherein the angle is downwardly inclined from a horizontal plane.
17. The apparatus of claim 1 wherein the second spray bar includes a plurality of perforations adapted to spray the vapor.
18. The apparatus of claim 17 wherein the perforations are uniformly distributed along the length of the second spray bar.
19. The apparatus of claim 17 wherein the perforations are colinear.
20. The apparatus of claim 17 wherein the perforations have the same orientation as each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/249,960 US20090078292A1 (en) | 2002-06-13 | 2008-10-12 | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38827702P | 2002-06-13 | 2002-06-13 | |
US10/461,889 US20040031167A1 (en) | 2002-06-13 | 2003-06-13 | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US12/249,960 US20090078292A1 (en) | 2002-06-13 | 2008-10-12 | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
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Publication number | Priority date | Publication date | Assignee | Title |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788992A (en) * | 1987-04-28 | 1988-12-06 | Lewis Corporation | Ultrasonic strip cleaning apparatus |
US5412411A (en) * | 1993-11-26 | 1995-05-02 | Xerox Corporation | Capping station for an ink-jet printer with immersion of printhead in ink |
US5432539A (en) * | 1993-04-19 | 1995-07-11 | Xerox Corporation | Printhead maintenance device for a full-width ink-jet printer including a wiper rotated by a lead screw |
US5651412A (en) * | 1995-10-06 | 1997-07-29 | Armco Inc. | Strip casting with fluxing agent applied to casting roll |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US5734945A (en) * | 1994-11-01 | 1998-03-31 | Eastman Kodak Company | Processing apparatus |
US5793390A (en) * | 1993-04-19 | 1998-08-11 | Xerox Corporation | Wet-wipe maintenance device for a full-width ink-jet printer |
US5807522A (en) * | 1994-06-17 | 1998-09-15 | The Board Of Trustees Of The Leland Stanford Junior University | Methods for fabricating microarrays of biological samples |
US5884141A (en) * | 1994-08-31 | 1999-03-16 | Sony Corporation | Near video-on-demand signal receiver |
US5884640A (en) * | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US6054327A (en) * | 1994-02-11 | 2000-04-25 | Institut Pasteur | Process for aligning macromolecules on a surface by passage through a meniscus |
US6128830A (en) * | 1999-05-15 | 2000-10-10 | Dean Bettcher | Apparatus and method for drying solid articles |
US6153075A (en) * | 1998-02-26 | 2000-11-28 | Micron Technology, Inc. | Methods using electrophoretically deposited patternable material |
US6158141A (en) * | 1998-05-07 | 2000-12-12 | Sony Corporation | Apparatus and method for drying semiconductor substrate |
US6169556B1 (en) * | 1996-06-28 | 2001-01-02 | Canon Kabushiki Kaisha | Method for driving a recording head having a plurality of heaters arranged in each nozzle |
US6224701B1 (en) * | 1999-09-08 | 2001-05-01 | Alcoa Inc. | Molded plastic siding panel |
US20010015021A1 (en) * | 2000-02-14 | 2001-08-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
US20020121290A1 (en) * | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US20020121289A1 (en) * | 2001-03-05 | 2002-09-05 | Applied Materials, Inc. | Spray bar |
US20020189643A1 (en) * | 1999-08-25 | 2002-12-19 | Yufei Chen | Method and apparatus for cleaning/drying hydrophobic wafers |
US20030041879A1 (en) * | 1999-03-30 | 2003-03-06 | Redeker Fred C. | Wafer edge cleaning method and apparatus |
US20030106239A1 (en) * | 2001-12-11 | 2003-06-12 | Yi Hun-Jung | System and method for drying semiconductor substrate |
US20030118730A1 (en) * | 2000-10-13 | 2003-06-26 | Aouad Yousef Georges | Method for manufacturing laundry additive article |
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20040074102A1 (en) * | 2002-10-21 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dryer lid for substrate dryer |
US20040115354A1 (en) * | 2000-07-06 | 2004-06-17 | Commonwealth Scientific And Industrial Research Organisation | Apparatus for surface engineering |
US6784106B2 (en) * | 2001-12-28 | 2004-08-31 | Dns Korea Co., Ltd | Wafer drying method |
US6799588B1 (en) * | 1999-07-21 | 2004-10-05 | Steag Microtech Gmbh | Apparatus for treating substrates |
US20040200409A1 (en) * | 2002-12-16 | 2004-10-14 | Applied Materials, Inc. | Scrubber with integrated vertical marangoni drying |
US20050003737A1 (en) * | 2003-06-06 | 2005-01-06 | P.C.T. Systems, Inc. | Method and apparatus to process substrates with megasonic energy |
US20050132515A1 (en) * | 2003-12-18 | 2005-06-23 | Lam Research Corporation | Proximity brush unit apparatus and method |
US20060016029A1 (en) * | 2003-02-28 | 2006-01-26 | Katrina Mikhaylichenko | Brush scrubbing-high frequency resonating substrate processing system |
US20070155640A1 (en) * | 2005-12-30 | 2007-07-05 | Lam Research Corporation | Substrate preparation using stabilized fluid solutions and methods for making stable fluid solutions |
US20090024019A1 (en) * | 2007-07-18 | 2009-01-22 | Stein Adam L | Methods and apparatuses for detecting analytes in biological fluid of an animal |
Family Cites Families (260)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1062073A (en) * | 1964-05-15 | 1967-03-15 | Gevaert Photo Prod Nv | Method and apparatus for removing liquid from webs |
US3579853A (en) | 1968-12-05 | 1971-05-25 | Joseph J Martino | Circuit board drier |
US3579289A (en) | 1970-01-16 | 1971-05-18 | Us Agriculture | Acid salt form of deae cellulosic fabric providing built-in catalysis for the reaction with aminoplasts |
US3611986A (en) * | 1970-03-25 | 1971-10-12 | Armco Steel Corp | Apparatus for finishing metallic coatings |
US3767300A (en) | 1972-06-07 | 1973-10-23 | P Brown | Pollution control system for duplicator machine |
JPS5610109B2 (en) * | 1972-06-20 | 1981-03-05 | ||
SE375248B (en) * | 1973-08-08 | 1975-04-14 | Uddeholms Ab | |
US4082868A (en) * | 1976-03-18 | 1978-04-04 | Armco Steel Corporation | Method for continuously contact-coating one side only of a ferrous base metal strip with a molten coating metal |
US4336279A (en) | 1978-07-04 | 1982-06-22 | Metzger Wesley A | Apparatus and process for drying and curing coated substrates |
GB2061539B (en) * | 1979-09-12 | 1983-08-10 | Mitsubishi Paper Mills Ltd | Silver halide photographic material |
US4457254A (en) * | 1981-02-19 | 1984-07-03 | Mobil Oil Corporation | Film coating and biaxial orienting apparatus |
US4388258A (en) * | 1981-02-19 | 1983-06-14 | Mobil Oil Corporation | Polymer film coated with aqueous polymer |
US4541568A (en) | 1982-12-27 | 1985-09-17 | Lichfield William H | Safety spray wand |
US4536458A (en) * | 1984-01-03 | 1985-08-20 | Xerox Corporation | Migration imaging system |
US4984597B1 (en) * | 1984-05-21 | 1999-10-26 | Cfmt Inc | Apparatus for rinsing and drying surfaces |
US4611409A (en) | 1984-06-14 | 1986-09-16 | Fuji Photo Film Co., Ltd. | Liquid removing method |
US4751957A (en) * | 1986-03-11 | 1988-06-21 | National Aluminum Corporation | Method of and apparatus for continuous casting of metal strip |
US4646446A (en) * | 1985-11-04 | 1987-03-03 | American Screen Printing Equipment Company | UV curing apparatus |
NL8601939A (en) | 1986-07-28 | 1988-02-16 | Philips Nv | METHOD FOR REMOVING UNDESIRABLE PARTICLES FROM A SUBSTRATE SURFACE |
US4783947A (en) | 1987-03-25 | 1988-11-15 | Baxter Travenol Laboratories, Inc. | Apparatus for removing liquid and residue from a web of film |
GB2210152B (en) | 1987-09-23 | 1991-01-16 | Foxfield Walkden Equipment Ltd | Drying apparatus |
GB2220951B (en) | 1988-07-08 | 1992-09-16 | Isc Chemicals Ltd | Cleaning and drying of electronic assemblies |
US5183067A (en) * | 1988-07-08 | 1993-02-02 | Isc Chemicals Limited | Cleaning and drying of electronic assemblies |
US4937163A (en) * | 1989-01-27 | 1990-06-26 | Xerox Corporation | Imaging member and processes thereof |
NL8900480A (en) * | 1989-02-27 | 1990-09-17 | Philips Nv | METHOD AND APPARATUS FOR DRYING SUBSTRATES AFTER TREATMENT IN A LIQUID |
US5308687A (en) * | 1989-05-09 | 1994-05-03 | Eastman Kodak Company | Fiber element containing tin oxide heteropolycondensates with enhanced electrical conductivity |
US5005250A (en) * | 1989-06-05 | 1991-04-09 | Billco Manufacturing, Inc. | Glass sheet cleaning apparatus |
US5097755A (en) * | 1989-08-17 | 1992-03-24 | Redi-Cut Foods, Inc. | Method and apparatus for processing produce |
US5371950A (en) | 1990-02-23 | 1994-12-13 | S & K Products International, Inc. | Isopropyl alcohol vapor dryer system |
JP3167317B2 (en) | 1990-10-18 | 2001-05-21 | 株式会社東芝 | Substrate processing apparatus and method |
US5077353A (en) * | 1990-11-07 | 1991-12-31 | Hoechst Celanese Corporation | Primer coating composition having glycidory silane and copolyester containing sulfonate groups |
US5212260A (en) * | 1990-11-07 | 1993-05-18 | Hoechst Celanese Corporation | Primer coating composition for silicone release applications |
US5212012A (en) * | 1990-11-07 | 1993-05-18 | Hoechst Celanese Corporation | Primer coating composition and polymeric film coated with primer coating for silicone release applications |
US5243768A (en) | 1991-02-18 | 1993-09-14 | Mitsubishi Kasei Corporation | Vapor drier |
SE468287B (en) | 1991-04-22 | 1992-12-07 | Infraroedteknik Ab | SET RESP DEVICE FOR TREATMENT OF A CONTINUOUS MATERIAL COURSE |
DE4121032A1 (en) | 1991-06-26 | 1993-01-07 | Schmid Gmbh & Co Geb | DEVICE FOR TREATING PLATE-SHAPED OBJECTS, IN PARTICULAR BOARDS |
US5350601A (en) * | 1991-11-06 | 1994-09-27 | Hoechst Celanese Corporation | Process for making and using polymeric film coated with primer coating for silicone release applications |
JP3030313B2 (en) | 1992-02-12 | 2000-04-10 | 住特フェライト株式会社 | Continuous ultrasonic cleaning equipment |
US5496647A (en) * | 1992-05-15 | 1996-03-05 | Hoechst Celanese Corporation | Primer coating, polyester film having a primer coating, and a process for coating film |
CA2094230A1 (en) * | 1992-05-15 | 1993-11-16 | James J. Krejci | Primer coating, polyester film having a primer coating, and a process for coating film |
US5351419A (en) | 1992-07-27 | 1994-10-04 | Motorola, Inc. | Method for vapor drying |
US5339842A (en) | 1992-12-18 | 1994-08-23 | Specialty Coating Systems, Inc. | Methods and apparatus for cleaning objects |
US5392843A (en) * | 1993-03-25 | 1995-02-28 | Dolan; James J. | Continuous silver float casting of steel sheet or plate |
US5419021A (en) | 1993-04-20 | 1995-05-30 | W.R. Grace & Co.-Conn. | Telescoping slot nozzle |
JP3347814B2 (en) | 1993-05-17 | 2002-11-20 | 大日本スクリーン製造株式会社 | Substrate cleaning / drying processing method and processing apparatus |
JP3412865B2 (en) * | 1993-07-16 | 2003-06-03 | キヤノン株式会社 | Recording sheet and ink jet recording method using the same |
ATE182606T1 (en) * | 1993-12-20 | 1999-08-15 | Mitsubishi Polyester Film Llc | COATING COMPOSITION FOR AN ADHESIVE LAYER ON A POLYESTER FILM FOR PHOTOSENSITIVE MATERIAL |
US5447566A (en) | 1993-12-27 | 1995-09-05 | Autographic Business Forms, Inc. | Paper coating and drying machine |
DE4413077C2 (en) | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Method and device for chemical treatment of substrates |
DE69508863T2 (en) * | 1994-08-25 | 1999-10-21 | Canon Kk | Recording medium and imaging method using the same |
JP3591938B2 (en) * | 1994-10-27 | 2004-11-24 | キヤノン株式会社 | Ink jet recording medium and image forming method using the same |
US5571337A (en) | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5634978A (en) | 1994-11-14 | 1997-06-03 | Yieldup International | Ultra-low particle semiconductor method |
TW386235B (en) * | 1995-05-23 | 2000-04-01 | Tokyo Electron Ltd | Method for spin rinsing |
US5964958A (en) | 1995-06-07 | 1999-10-12 | Gary W. Ferrell | Methods for drying and cleaning objects using aerosols |
KR0171943B1 (en) | 1995-06-26 | 1999-03-30 | 김주용 | Micro-pattern forming method of semiconductor device |
US6120839A (en) * | 1995-07-20 | 2000-09-19 | E Ink Corporation | Electro-osmotic displays and materials for making the same |
US7411719B2 (en) * | 1995-07-20 | 2008-08-12 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US7071913B2 (en) * | 1995-07-20 | 2006-07-04 | E Ink Corporation | Retroreflective electrophoretic displays and materials for making the same |
US6727881B1 (en) * | 1995-07-20 | 2004-04-27 | E Ink Corporation | Encapsulated electrophoretic displays and methods and materials for making the same |
US7106296B1 (en) * | 1995-07-20 | 2006-09-12 | E Ink Corporation | Electronic book with multiple page displays |
US7109968B2 (en) * | 1995-07-20 | 2006-09-19 | E Ink Corporation | Non-spherical cavity electrophoretic displays and methods and materials for making the same |
US6017584A (en) * | 1995-07-20 | 2000-01-25 | E Ink Corporation | Multi-color electrophoretic displays and materials for making the same |
US6515649B1 (en) * | 1995-07-20 | 2003-02-04 | E Ink Corporation | Suspended particle displays and materials for making the same |
US6262706B1 (en) * | 1995-07-20 | 2001-07-17 | E Ink Corporation | Retroreflective electrophoretic displays and materials for making the same |
US5836084A (en) | 1996-03-04 | 1998-11-17 | Hewlett-Packard Company | Stencil dryer |
DE19613620C2 (en) | 1996-04-04 | 1998-04-16 | Steag Micro Tech Gmbh | Method and device for drying substrates |
US5732478A (en) * | 1996-05-10 | 1998-03-31 | Altos Engineering, Inc. | Forced air vacuum drying |
US5795649A (en) * | 1996-06-03 | 1998-08-18 | Ici Americas Inc. | Release film and method of making thereof |
DE69732392T8 (en) * | 1996-06-24 | 2006-04-27 | Interuniversitair Microelectronica Centrum Vzw | Apparatus and method for wet cleaning or for etching a flat substrate |
US6721083B2 (en) * | 1996-07-19 | 2004-04-13 | E Ink Corporation | Electrophoretic displays using nanoparticles |
US6039059A (en) | 1996-09-30 | 2000-03-21 | Verteq, Inc. | Wafer cleaning system |
JP2969087B2 (en) * | 1996-11-06 | 1999-11-02 | 日本エー・エス・エム株式会社 | Semiconductor substrate processing method |
US5952106A (en) * | 1996-11-14 | 1999-09-14 | Alliedsignal Inc. | Coated nylon film |
AUPO473297A0 (en) * | 1997-01-22 | 1997-02-20 | Industrial Automation Services Pty Ltd | Coating thickness control |
US6350322B1 (en) * | 1997-03-21 | 2002-02-26 | Micron Technology, Inc. | Method of reducing water spotting and oxide growth on a semiconductor structure |
US6695926B1 (en) * | 1997-07-09 | 2004-02-24 | Ses Co., Ltd. | Treatment method of semiconductor wafers and the like and treatment system for the same |
JPH1126423A (en) | 1997-07-09 | 1999-01-29 | Sugai:Kk | Method and apparatus for processing semiconductor wafer and the like |
US6300932B1 (en) * | 1997-08-28 | 2001-10-09 | E Ink Corporation | Electrophoretic displays with luminescent particles and materials for making the same |
US7247379B2 (en) * | 1997-08-28 | 2007-07-24 | E Ink Corporation | Electrophoretic particles, and processes for the production thereof |
US7002728B2 (en) * | 1997-08-28 | 2006-02-21 | E Ink Corporation | Electrophoretic particles, and processes for the production thereof |
US6067185A (en) * | 1997-08-28 | 2000-05-23 | E Ink Corporation | Process for creating an encapsulated electrophoretic display |
US6491764B2 (en) * | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
US6334902B1 (en) * | 1997-09-24 | 2002-01-01 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for removing a liquid from a surface |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
DE69833847T2 (en) * | 1997-09-24 | 2006-12-28 | Interuniversitair Micro-Electronica Centrum Vzw | Method for removing particles and liquid from the surface of a substrate |
US5807439A (en) | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
JPH11162876A (en) | 1997-11-28 | 1999-06-18 | Nec Corp | Method and device for manufacturing semiconductor device |
US6108932A (en) | 1998-05-05 | 2000-08-29 | Steag Microtech Gmbh | Method and apparatus for thermocapillary drying |
US6228216B1 (en) | 1998-07-10 | 2001-05-08 | Kimberly-Clark Worldwide, Inc. | Transfer of a cellulosic web between spaced apart transport means using a moving air as a support |
JP2000031239A (en) | 1998-07-13 | 2000-01-28 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
US6273100B1 (en) | 1998-08-27 | 2001-08-14 | Micron Technology, Inc. | Surface cleaning apparatus and method |
US7527698B2 (en) | 1998-09-23 | 2009-05-05 | Interuniversitair Microelektronica Centrum (Imec, Vzw) | Method and apparatus for removing a liquid from a surface of a substrate |
JP2000100774A (en) | 1998-09-28 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | Substrate treating unit including substrate drying treatment and drying of substrate |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
JP3964556B2 (en) | 1998-09-30 | 2007-08-22 | 芝浦メカトロニクス株式会社 | Air knife and drying apparatus using the same |
US6262833B1 (en) * | 1998-10-07 | 2001-07-17 | E Ink Corporation | Capsules for electrophoretic displays and methods for making the same |
US6328809B1 (en) | 1998-10-09 | 2001-12-11 | Scp Global Technologies, Inc. | Vapor drying system and method |
US5989359A (en) * | 1998-10-09 | 1999-11-23 | Berbel; Jose A. | Method for drying objects with fluids |
US6322860B1 (en) * | 1998-11-02 | 2001-11-27 | Rohm And Haas Company | Plastic substrates for electronic display applications |
US6120868A (en) * | 1998-12-21 | 2000-09-19 | Mitsubishi Polyester Film, Llc | Silicone coated film with back side slip control coating and method of controlling slip of such film |
US6376067B1 (en) * | 1998-12-21 | 2002-04-23 | Mitsubishi Polyester Film, Llc | Silicone coated film with back side slip control coating and method of controlling slip of such film |
US7429537B2 (en) | 1999-01-22 | 2008-09-30 | Semitool, Inc. | Methods and apparatus for rinsing and drying |
JP3454469B2 (en) | 1999-02-09 | 2003-10-06 | 島田理化工業株式会社 | Substrate drying equipment |
US6783937B1 (en) * | 1999-02-25 | 2004-08-31 | Pall Corporation | Negatively charged membrane |
US6780327B1 (en) * | 1999-02-25 | 2004-08-24 | Pall Corporation | Positively charged membrane |
JP2000252254A (en) | 1999-02-26 | 2000-09-14 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
JP2000266465A (en) | 1999-03-17 | 2000-09-29 | Dainippon Screen Mfg Co Ltd | Apparatus and method for drying substrate |
US6328814B1 (en) | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
US6410436B2 (en) | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
JP2000286320A (en) | 1999-03-31 | 2000-10-13 | Shibaura Mechatronics Corp | Substrate transfer apparatus |
JP4582914B2 (en) * | 1999-04-06 | 2010-11-17 | イー インク コーポレイション | Method for making droplets for use in capsule-based electromotive displays |
US7119759B2 (en) * | 1999-05-03 | 2006-10-10 | E Ink Corporation | Machine-readable displays |
US8009348B2 (en) * | 1999-05-03 | 2011-08-30 | E Ink Corporation | Machine-readable displays |
US6729040B2 (en) | 1999-05-27 | 2004-05-04 | Oliver Design, Inc. | Apparatus and method for drying a substrate using hydrophobic and polar organic compounds |
US6625901B1 (en) | 1999-05-27 | 2003-09-30 | Oliver Design, Inc. | Apparatus and method for drying a thin substrate |
JP3918401B2 (en) | 1999-05-31 | 2007-05-23 | 株式会社日立ハイテクノロジーズ | Substrate drying apparatus, drying method, and substrate manufacturing method |
JP3425895B2 (en) | 1999-06-03 | 2003-07-14 | 鹿児島日本電気株式会社 | Rotary substrate drying apparatus and drying method |
ATE502320T1 (en) * | 1999-07-01 | 2011-04-15 | E Ink Corp | ELECTROPHORETIC MEDIUM PROVIDED WITH SPACERS |
US6312971B1 (en) * | 1999-08-31 | 2001-11-06 | E Ink Corporation | Solvent annealing process for forming a thin semiconductor film with advantageous properties |
JP3474495B2 (en) | 1999-09-21 | 2003-12-08 | シャープ株式会社 | Substrate cleaning method and cleaning apparatus |
JP2001099569A (en) | 1999-09-29 | 2001-04-13 | Shibaura Mechatronics Corp | Drying treating device for substrate |
US7122126B1 (en) | 2000-09-28 | 2006-10-17 | Materials And Technologies Corporation | Wet processing using a fluid meniscus, apparatus and method |
JP2001135609A (en) | 1999-11-01 | 2001-05-18 | Hitachi Ltd | Method and device for processing substrate |
JP2001156308A (en) | 1999-11-29 | 2001-06-08 | Kanegafuchi Chem Ind Co Ltd | Method and apparatus for drying solar cell substrate |
US6461442B1 (en) * | 1999-11-29 | 2002-10-08 | Xerox Corporation | Process for removing a strip of coating material |
US6455142B1 (en) * | 1999-12-17 | 2002-09-24 | Mitsubishi Polyester Film, Llc | Anti-fog coating and coated film |
US6282812B1 (en) | 1999-12-20 | 2001-09-04 | St Assembly Test Services Pte Ltd. | Multi air-knife box and method of use |
JP4122674B2 (en) | 2000-02-14 | 2008-07-23 | 株式会社日立ハイテクノロジーズ | Substrate drying apparatus and drying method |
US6289605B1 (en) | 2000-02-18 | 2001-09-18 | Macronix International Co. Ltd. | Method for drying a semiconductor wafer |
US6265074B1 (en) * | 2000-02-25 | 2001-07-24 | Honeywell International Inc. | Write-erase board |
JP2001255668A (en) | 2000-03-10 | 2001-09-21 | Matsushita Electric Ind Co Ltd | Wet process processing method and device |
JP2001284310A (en) | 2000-03-31 | 2001-10-12 | Shibaura Mechatronics Corp | Apparatus and method for treating substrate |
US20020029490A1 (en) * | 2000-04-25 | 2002-03-14 | Lundquist Richard T. | Body dryer method and apparatus |
JP3926967B2 (en) * | 2000-05-19 | 2007-06-06 | 富士通株式会社 | Storage device |
JP2001349671A (en) | 2000-06-02 | 2001-12-21 | Sharp Corp | Spin drying apparatus and drying method |
US6502591B1 (en) * | 2000-06-08 | 2003-01-07 | Semitool, Inc. | Surface tension effect dryer with porous vessel walls |
WO2001099156A1 (en) | 2000-06-16 | 2001-12-27 | Applied Materials, Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
EP1168422B1 (en) | 2000-06-27 | 2009-12-16 | Imec | Method and apparatus for liquid-treating and drying a substrate |
US7234477B2 (en) | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US6676754B1 (en) * | 2000-06-30 | 2004-01-13 | 3M Innovative Properties Company | Coating apparatus and methods of applying a polymer coating |
US7000622B2 (en) * | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
JP2002022359A (en) | 2000-07-07 | 2002-01-23 | Matsushita Electric Ind Co Ltd | Substrate dryer |
US6543078B1 (en) | 2000-07-24 | 2003-04-08 | Eastman Kodak Company | Apparatus and method for cleaning object having generally irregular surface features |
JP4521948B2 (en) * | 2000-08-08 | 2010-08-11 | 四国化工機株式会社 | Sterilizer removal device |
US6613430B2 (en) * | 2000-09-07 | 2003-09-02 | Mitsubishi Polyester Film, Llc | Release coated polymer film |
JP4965054B2 (en) * | 2000-09-07 | 2012-07-04 | ミツビシ ポリエステル フィルム インク | Heat seal coating film and coating film |
GB0024640D0 (en) | 2000-10-07 | 2000-11-22 | Ksm Internat Ltd | Substrate cleaning |
US6555017B1 (en) | 2000-10-13 | 2003-04-29 | The Regents Of The University Of Caliofornia | Surface contouring by controlled application of processing fluid using Marangoni effect |
US6811839B2 (en) * | 2000-11-09 | 2004-11-02 | Canon Kabushiki Kaisha | Recording medium and image forming process using the same |
GB2368971B (en) | 2000-11-11 | 2005-01-05 | Pure Wafer Ltd | Process for Reclaimimg Wafer Substrates |
US6591518B2 (en) | 2000-12-01 | 2003-07-15 | Technotrans America West, Inc. | Integral expander support brackets for air knife drier cassettes |
EP1244168A1 (en) * | 2001-03-20 | 2002-09-25 | Francois Sugnaux | Mesoporous network electrode for electrochemical cell |
US7230750B2 (en) * | 2001-05-15 | 2007-06-12 | E Ink Corporation | Electrophoretic media and processes for the production thereof |
US6663956B2 (en) * | 2001-04-26 | 2003-12-16 | Mitsubishi Polyerster Film, Llc | Antistatic coating and coated film |
US6911255B2 (en) * | 2001-05-08 | 2005-06-28 | Mitsubishi Polyester Film, Llc | Clear barrier coating and coated film |
US20090009852A1 (en) * | 2001-05-15 | 2009-01-08 | E Ink Corporation | Electrophoretic particles and processes for the production thereof |
WO2002093245A1 (en) * | 2001-05-15 | 2002-11-21 | E Ink Corporation | Electrophoretic displays containing magnetic particles |
WO2002093246A1 (en) * | 2001-05-15 | 2002-11-21 | E Ink Corporation | Electrophoretic particles |
US7100304B2 (en) | 2001-06-12 | 2006-09-05 | Akrion Technologies, Inc. | Megasonic cleaner and dryer |
WO2002101798A2 (en) | 2001-06-12 | 2002-12-19 | Verteq, Inc. | Method of applying liquid to a megasonic apparatus for improved cleaning control |
US6899111B2 (en) | 2001-06-15 | 2005-05-31 | Applied Materials, Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
US6398875B1 (en) | 2001-06-27 | 2002-06-04 | International Business Machines Corporation | Process of drying semiconductor wafers using liquid or supercritical carbon dioxide |
US7561324B2 (en) * | 2002-09-03 | 2009-07-14 | E Ink Corporation | Electro-optic displays |
WO2003007066A2 (en) * | 2001-07-09 | 2003-01-23 | E Ink Corporation | Electro-optical display having a lamination adhesive layer |
US6982178B2 (en) * | 2002-06-10 | 2006-01-03 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7110163B2 (en) * | 2001-07-09 | 2006-09-19 | E Ink Corporation | Electro-optic display and lamination adhesive for use therein |
US7535624B2 (en) * | 2001-07-09 | 2009-05-19 | E Ink Corporation | Electro-optic display and materials for use therein |
US6684523B2 (en) * | 2001-08-27 | 2004-02-03 | Applied Materials, Inc. | Particle removal apparatus |
US6990751B2 (en) * | 2001-10-03 | 2006-01-31 | Sonic Air Systems, Inc. | Rotatable air knife |
DE10153225A1 (en) * | 2001-10-31 | 2003-05-08 | Semax Gmbh Prozesstechnik | Method and device for drying flat objects, in particular disks made of gallium or silicon or the like. substrates |
US7513062B2 (en) | 2001-11-02 | 2009-04-07 | Applied Materials, Inc. | Single wafer dryer and drying methods |
EP1446827A2 (en) | 2001-11-02 | 2004-08-18 | Applied Materials, Inc. | Single wafer dryer and drying method |
US6709735B2 (en) * | 2001-11-14 | 2004-03-23 | Mitsubishi Polyester Film, Llc | Oxygen barrier coating and coated film |
KR100454241B1 (en) | 2001-12-28 | 2004-10-26 | 한국디엔에스 주식회사 | wafer drying apparatus |
US6898867B1 (en) | 2002-02-12 | 2005-05-31 | Sonic Air Systems, Inc. | Air compression variable heating system |
US6742285B2 (en) | 2002-03-18 | 2004-06-01 | Glass Equipment Development, Inc. | Air knife and conveyor system |
US7110164B2 (en) * | 2002-06-10 | 2006-09-19 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US7649674B2 (en) * | 2002-06-10 | 2010-01-19 | E Ink Corporation | Electro-optic display with edge seal |
US7583427B2 (en) * | 2002-06-10 | 2009-09-01 | E Ink Corporation | Components and methods for use in electro-optic displays |
US20040018345A1 (en) * | 2002-07-26 | 2004-01-29 | Athorn-Telep Yvonne K. | Dry-erase ink marking media |
US6842996B2 (en) * | 2002-08-31 | 2005-01-18 | Day International, Inc. | Segmented air distribution bar |
US7839564B2 (en) * | 2002-09-03 | 2010-11-23 | E Ink Corporation | Components and methods for use in electro-optic displays |
KR100447285B1 (en) | 2002-09-05 | 2004-09-07 | 삼성전자주식회사 | Apparatus for drying a substrate |
US8691371B2 (en) * | 2002-09-11 | 2014-04-08 | General Electric Company | Barrier coating and method |
US6875289B2 (en) | 2002-09-13 | 2005-04-05 | Fsi International, Inc. | Semiconductor wafer cleaning systems and methods |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7389783B2 (en) | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7513262B2 (en) | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US7240679B2 (en) | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US7069937B2 (en) | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7153400B2 (en) | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7045018B2 (en) | 2002-09-30 | 2006-05-16 | Lam Research Corporation | Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US20040159340A1 (en) * | 2002-11-11 | 2004-08-19 | Hiatt William M. | Methods for removing and reclaiming unconsolidated material from substrates following fabrication of objects thereon by programmed material consolidation techniques |
US6987603B2 (en) * | 2003-01-31 | 2006-01-17 | E Ink Corporation | Construction of electrophoretic displays |
US7396569B2 (en) * | 2003-02-10 | 2008-07-08 | Nanoscale Materials, Inc. | Rapidly self-assembled thin films and functional decals |
US20080261044A1 (en) * | 2003-02-10 | 2008-10-23 | Jennifer Hoyt Lalli | Rapidly self-assembled thin films and functional decals |
US7339715B2 (en) * | 2003-03-25 | 2008-03-04 | E Ink Corporation | Processes for the production of electrophoretic displays |
US7910175B2 (en) * | 2003-03-25 | 2011-03-22 | E Ink Corporation | Processes for the production of electrophoretic displays |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7867565B2 (en) * | 2003-06-30 | 2011-01-11 | Imec | Method for coating substrates |
JP4207154B2 (en) * | 2003-07-25 | 2009-01-14 | 株式会社デンソー | Capacitive sensor device having inspection function, inspection method, and airbag system |
US7455787B2 (en) * | 2003-08-01 | 2008-11-25 | Sunpower Corporation | Etching of solar cell materials |
US7354990B2 (en) * | 2003-08-26 | 2008-04-08 | General Electric Company | Purified polymeric materials and methods of purifying polymeric materials |
US7244813B2 (en) * | 2003-08-26 | 2007-07-17 | General Electric Company | Methods of purifying polymeric material |
US7231682B1 (en) | 2003-08-28 | 2007-06-19 | Lam Research Corporation | Method and apparatus for simultaneously cleaning the front side and back side of a wafer |
US7170190B1 (en) * | 2003-12-16 | 2007-01-30 | Lam Research Corporation | Apparatus for oscillating a head and methods for implementing the same |
US7350315B2 (en) | 2003-12-22 | 2008-04-01 | Lam Research Corporation | Edge wheel dry manifold |
US7568490B2 (en) | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
US7416370B2 (en) | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
US7206119B2 (en) * | 2003-12-31 | 2007-04-17 | E Ink Corporation | Electro-optic displays, and method for driving same |
TW200534331A (en) * | 2004-02-20 | 2005-10-16 | Mykrolis Corp | Non-porous adherent inert coatings and methods of making |
WO2005086208A1 (en) | 2004-02-27 | 2005-09-15 | Applied Materials, Inc. | Apparatus and method for drying substrates |
US20050193587A1 (en) | 2004-03-03 | 2005-09-08 | Chien-Hua Tsai | Drying process for wafers |
WO2005090490A2 (en) * | 2004-03-17 | 2005-09-29 | The Lubrizol Corporation | Method to use an emulsified material as a coating |
CA2500938A1 (en) * | 2004-03-24 | 2005-09-24 | Rohm And Haas Company | Memory devices based on electric field programmable films |
US20050248645A1 (en) * | 2004-04-30 | 2005-11-10 | Videojet Technologies Inc. | Method for improving the quality of ink jet printed images |
ATE415646T1 (en) | 2004-07-01 | 2008-12-15 | Imec Inter Uni Micro Electr | METHOD AND APPARATUS FOR IMMERSION LITHOGRAPHY |
JP4654627B2 (en) * | 2004-07-26 | 2011-03-23 | セイコーエプソン株式会社 | Chemical adsorption film forming method and chemical adsorption film |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7918383B2 (en) * | 2004-09-01 | 2011-04-05 | Micron Technology, Inc. | Methods for placing substrates in contact with molten solder |
US7003899B1 (en) * | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
US7089687B2 (en) | 2004-09-30 | 2006-08-15 | Lam Research Corporation | Wafer edge wheel with drying function |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US20060248745A1 (en) | 2005-05-03 | 2006-11-09 | 3M Innovative Properties Company | Fixed air knife assembly |
JP4889735B2 (en) * | 2005-06-22 | 2012-03-07 | ミツビシ ポリエステル フィルム インク | Coated polymer film having oxygen barrier properties |
WO2007002452A2 (en) * | 2005-06-23 | 2007-01-04 | E Ink Corporation | Edge seals and processes for electro-optic displays |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070075628A1 (en) * | 2005-10-04 | 2007-04-05 | General Electric Company | Organic light emitting devices having latent activated layers |
US20080043318A1 (en) * | 2005-10-18 | 2008-02-21 | E Ink Corporation | Color electro-optic displays, and processes for the production thereof |
US20080289088A1 (en) * | 2005-11-07 | 2008-11-27 | E.I. Du Pont De Nemours And Company | N-alkylchitosan films and laminates made therefrom |
KR20080081912A (en) * | 2005-11-07 | 2008-09-10 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Chitosan films and laminates made therefrom |
US8390301B2 (en) * | 2006-03-08 | 2013-03-05 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
TWI350793B (en) * | 2006-03-08 | 2011-10-21 | E Ink Corp | Methods for production of electro-optic displays |
US7843624B2 (en) * | 2006-03-08 | 2010-11-30 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US8610988B2 (en) * | 2006-03-09 | 2013-12-17 | E Ink Corporation | Electro-optic display with edge seal |
US7470581B2 (en) * | 2006-07-27 | 2008-12-30 | Hewlett-Packard Development Company, L.P. | Electromagnetic waveguide |
US7910386B2 (en) * | 2006-07-28 | 2011-03-22 | General Electric Company | Method of making organic light emitting devices |
US20080041526A1 (en) * | 2006-08-16 | 2008-02-21 | Pass Thomas P | Single-sided etching |
JP4800149B2 (en) * | 2006-08-17 | 2011-10-26 | 東京エレクトロン株式会社 | Semiconductor manufacturing equipment |
KR101156889B1 (en) * | 2006-09-15 | 2012-06-21 | 가부시키가이샤 리코 | Recording ink, inkjet recording method and inkjet recording apparatus |
US7649666B2 (en) * | 2006-12-07 | 2010-01-19 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7935647B2 (en) * | 2006-12-15 | 2011-05-03 | E. I. Du Pont De Nemours And Company | Laminates of acid polysaccharide films |
US20080148595A1 (en) | 2006-12-20 | 2008-06-26 | Lam Research Corporation | Method and apparatus for drying substrates using a surface tensions reducing gas |
US20080155852A1 (en) | 2006-12-29 | 2008-07-03 | Olgado Donald J K | Multiple substrate vapor drying systems and methods |
US20080168676A1 (en) | 2007-01-17 | 2008-07-17 | Getinge Sourcing Llc | Axially-compact dryer, particularly adapted for use with a tunnel washer |
US7688497B2 (en) * | 2007-01-22 | 2010-03-30 | E Ink Corporation | Multi-layer sheet for use in electro-optic displays |
TWI386313B (en) * | 2007-01-22 | 2013-02-21 | E Ink Corp | Multi-layer sheet for use in electro-optic displays |
JP2009032380A (en) * | 2007-03-05 | 2009-02-12 | Rohm & Haas Co | Curabile composition |
US7826129B2 (en) * | 2007-03-06 | 2010-11-02 | E Ink Corporation | Materials for use in electrophoretic displays |
KR20080090070A (en) | 2007-04-04 | 2008-10-08 | 삼성전자주식회사 | Air knife and apparatus drying substrates having the same |
US9199441B2 (en) * | 2007-06-28 | 2015-12-01 | E Ink Corporation | Processes for the production of electro-optic displays, and color filters for use therein |
US8034209B2 (en) * | 2007-06-29 | 2011-10-11 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US20090122389A1 (en) * | 2007-11-14 | 2009-05-14 | E Ink Corporation | Electro-optic assemblies, and adhesives and binders for use therein |
-
2003
- 2003-06-13 US US10/461,889 patent/US20040031167A1/en not_active Abandoned
-
2008
- 2008-10-12 US US12/249,956 patent/US8322045B2/en active Active
- 2008-10-12 US US12/249,961 patent/US20090032068A1/en not_active Abandoned
- 2008-10-12 US US12/249,960 patent/US20090078292A1/en not_active Abandoned
Patent Citations (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788992A (en) * | 1987-04-28 | 1988-12-06 | Lewis Corporation | Ultrasonic strip cleaning apparatus |
US5432539A (en) * | 1993-04-19 | 1995-07-11 | Xerox Corporation | Printhead maintenance device for a full-width ink-jet printer including a wiper rotated by a lead screw |
US5793390A (en) * | 1993-04-19 | 1998-08-11 | Xerox Corporation | Wet-wipe maintenance device for a full-width ink-jet printer |
US5412411A (en) * | 1993-11-26 | 1995-05-02 | Xerox Corporation | Capping station for an ink-jet printer with immersion of printhead in ink |
US6054327A (en) * | 1994-02-11 | 2000-04-25 | Institut Pasteur | Process for aligning macromolecules on a surface by passage through a meniscus |
US5807522A (en) * | 1994-06-17 | 1998-09-15 | The Board Of Trustees Of The Leland Stanford Junior University | Methods for fabricating microarrays of biological samples |
US5884141A (en) * | 1994-08-31 | 1999-03-16 | Sony Corporation | Near video-on-demand signal receiver |
US5734945A (en) * | 1994-11-01 | 1998-03-31 | Eastman Kodak Company | Processing apparatus |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US5651412A (en) * | 1995-10-06 | 1997-07-29 | Armco Inc. | Strip casting with fluxing agent applied to casting roll |
US6169556B1 (en) * | 1996-06-28 | 2001-01-02 | Canon Kabushiki Kaisha | Method for driving a recording head having a plurality of heaters arranged in each nozzle |
US5884640A (en) * | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US6153075A (en) * | 1998-02-26 | 2000-11-28 | Micron Technology, Inc. | Methods using electrophoretically deposited patternable material |
US6158141A (en) * | 1998-05-07 | 2000-12-12 | Sony Corporation | Apparatus and method for drying semiconductor substrate |
US20030041879A1 (en) * | 1999-03-30 | 2003-03-06 | Redeker Fred C. | Wafer edge cleaning method and apparatus |
US6797074B2 (en) * | 1999-03-30 | 2004-09-28 | Applied Materials, Inc. | Wafer edge cleaning method and apparatus |
US6128830A (en) * | 1999-05-15 | 2000-10-10 | Dean Bettcher | Apparatus and method for drying solid articles |
US6799588B1 (en) * | 1999-07-21 | 2004-10-05 | Steag Microtech Gmbh | Apparatus for treating substrates |
US20020121290A1 (en) * | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US20020189643A1 (en) * | 1999-08-25 | 2002-12-19 | Yufei Chen | Method and apparatus for cleaning/drying hydrophobic wafers |
US6224701B1 (en) * | 1999-09-08 | 2001-05-01 | Alcoa Inc. | Molded plastic siding panel |
US20010015021A1 (en) * | 2000-02-14 | 2001-08-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
US20040115354A1 (en) * | 2000-07-06 | 2004-06-17 | Commonwealth Scientific And Industrial Research Organisation | Apparatus for surface engineering |
US20030118730A1 (en) * | 2000-10-13 | 2003-06-26 | Aouad Yousef Georges | Method for manufacturing laundry additive article |
US20020121289A1 (en) * | 2001-03-05 | 2002-09-05 | Applied Materials, Inc. | Spray bar |
US20030106239A1 (en) * | 2001-12-11 | 2003-06-12 | Yi Hun-Jung | System and method for drying semiconductor substrate |
US6784106B2 (en) * | 2001-12-28 | 2004-08-31 | Dns Korea Co., Ltd | Wafer drying method |
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20090044839A1 (en) * | 2002-06-13 | 2009-02-19 | Applied Materials, Inc. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20090032068A1 (en) * | 2002-06-13 | 2009-02-05 | Applied Materials, Inc. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20040074102A1 (en) * | 2002-10-21 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dryer lid for substrate dryer |
US20040200409A1 (en) * | 2002-12-16 | 2004-10-14 | Applied Materials, Inc. | Scrubber with integrated vertical marangoni drying |
US20060016029A1 (en) * | 2003-02-28 | 2006-01-26 | Katrina Mikhaylichenko | Brush scrubbing-high frequency resonating substrate processing system |
US7238085B2 (en) * | 2003-06-06 | 2007-07-03 | P.C.T. Systems, Inc. | Method and apparatus to process substrates with megasonic energy |
US20050003737A1 (en) * | 2003-06-06 | 2005-01-06 | P.C.T. Systems, Inc. | Method and apparatus to process substrates with megasonic energy |
US7353560B2 (en) * | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US20080105277A1 (en) * | 2003-12-18 | 2008-05-08 | Lam Research Corporation | Methods of proximity head brushing |
US20050132515A1 (en) * | 2003-12-18 | 2005-06-23 | Lam Research Corporation | Proximity brush unit apparatus and method |
US20070155640A1 (en) * | 2005-12-30 | 2007-07-05 | Lam Research Corporation | Substrate preparation using stabilized fluid solutions and methods for making stable fluid solutions |
US20090024019A1 (en) * | 2007-07-18 | 2009-01-22 | Stein Adam L | Methods and apparatuses for detecting analytes in biological fluid of an animal |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090032068A1 (en) * | 2002-06-13 | 2009-02-05 | Applied Materials, Inc. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20090044839A1 (en) * | 2002-06-13 | 2009-02-19 | Applied Materials, Inc. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US8322045B2 (en) | 2002-06-13 | 2012-12-04 | Applied Materials, Inc. | Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife |
WO2013162910A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Methods and apparatus for marangoni substrate drying using a vapor knife manifold |
US8869422B2 (en) | 2012-04-27 | 2014-10-28 | Applied Materials, Inc. | Methods and apparatus for marangoni substrate drying using a vapor knife manifold |
US9859135B2 (en) | 2014-12-19 | 2018-01-02 | Applied Materials, Inc. | Substrate rinsing systems and methods |
US11735438B2 (en) | 2018-12-03 | 2023-08-22 | Applied Materials, Inc. | Methods and apparatus for Marangoni drying |
CN111780537A (en) * | 2020-07-10 | 2020-10-16 | 华海清科股份有限公司 | Marangoni drying device applied to wafer post-processing |
CN112683737A (en) * | 2020-12-25 | 2021-04-20 | 电子科技大学 | Method for generating marangoni effect |
Also Published As
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US20040031167A1 (en) | 2004-02-19 |
US8322045B2 (en) | 2012-12-04 |
US20090032068A1 (en) | 2009-02-05 |
US20090044839A1 (en) | 2009-02-19 |
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