CN201017856Y - Ejection apparatus - Google Patents

Ejection apparatus Download PDF

Info

Publication number
CN201017856Y
CN201017856Y CNU2007200676221U CN200720067622U CN201017856Y CN 201017856 Y CN201017856 Y CN 201017856Y CN U2007200676221 U CNU2007200676221 U CN U2007200676221U CN 200720067622 U CN200720067622 U CN 200720067622U CN 201017856 Y CN201017856 Y CN 201017856Y
Authority
CN
China
Prior art keywords
wafer
liquid line
utility
model
injection apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2007200676221U
Other languages
Chinese (zh)
Inventor
朱海青
陈肖科
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Beijing Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Manufacturing International Shanghai Corp filed Critical Semiconductor Manufacturing International Shanghai Corp
Priority to CNU2007200676221U priority Critical patent/CN201017856Y/en
Application granted granted Critical
Publication of CN201017856Y publication Critical patent/CN201017856Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The utility model provides an injection device. The utility model comprises a first fluid pipe, and two injection pipes respectively connected with the first fluid pipe, three atomizing nozzles are distributed on the two injection pipes in a row, therein, at least one atomizing nozzle is arranged oppositely to the diameter of a wafer, and the injection scope of the atomizing nozzle can cover the diameter of the wafer. Compared with the existing technology, the injection scope of the atomizing nozzle in the injection device of the utility model covers the whole surface of the wafer, and therefore, even if the time for awaiting to enter the clearing process exceeds the expectation, the corrosion of the grinding fluid left on the surface to the wafer can be effectively prevented. In addition, a fluid pipe is increased in the utility model, 0.2% triazole toluene can be filled through the fluid pipe to better protect the surface of the wafer, and to reduce the probability of the corrosion to the wafer to the minimum.

Description

Injection apparatus
Technical field
The utility model relates to the conveyer of a kind of use behind the cmp processing procedure, specifically, relates to the injection apparatus in the conveyer.
Background technology
Wafer can enter manufacturing process for cleaning through cmp, before entering manufacturing process for cleaning, wafer can be waited in conveyer, present processing procedure, the time of waiting for was generally 80 seconds, in the process of waiting for, was provided with injection apparatus in the conveyer, this injection apparatus can be always sprays plasma water with the residual lapping liquid of dilution crystal column surface to the positive and negative of wafer, thereby avoids crystal column surface to be corroded.
See also Fig. 1 and Fig. 2, injection apparatus of the prior art comprises playpipe 1, liquid line 7 and the two fog discharge nozzles 3 that are distributed in wafer 5 two sides, every row is made up of three atomizers 3 respectively, three atomizers 3 all are that vertical wafer 5 surfaces are arranged on the playpipe 1, and playpipe 1 provides plasma water from liquid line 7 for nozzle 3.As can be seen from Figure 2, the scope that the atomizer 3 of existing injection apparatus sprays does not cover the first half of wafer 5, when more or equipment breaks down when the wafer that cleans, may need time of waiting for longer, wafer 5 the first half that are not directed onto plasma water will be left in top lapping liquid corrosion, thereby cause wafer loss.
The utility model content
The purpose of this utility model is to provide a kind of injection apparatus, and its spray regime can cover the wafer all surfaces.
For achieving the above object, the utility model provides a kind of injection apparatus, it comprises one first liquid line, two playpipes that are connected respectively to this first liquid line, three atomizers that are arranged in a row distribute on two playpipes, wherein, the diameter setting of the corresponding wafer of described at least one atomizer, the spray regime of this atomizer covers this diameter wafer.
Compared with prior art, the spray regime of the atomizer of injection apparatus has covered the wafer all surfaces in the utility model, like this, surpassed expection, can prevent effectively that also wafer is by the upward residual lapping liquid corrosion in its surface even wait for the time that enters manufacturing process for cleaning.In addition, the utility model is set up a liquid line, and this liquid line injects 0.2% 3 HR-001, can better protect crystal column surface, and the probability that wafer is corroded drops to minimum.
Description of drawings
To the description of the utility model one embodiment, can further understand its practical novel purpose, specific structural features and advantage by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of injection apparatus in the prior art;
Fig. 2 is the working state schematic representation of injection apparatus in the prior art;
Fig. 3 is the structural representation of the utility model injection apparatus;
Fig. 4 is the working state schematic representation of the utility model injection apparatus.
Embodiment
See also Fig. 3, injection apparatus of the present utility model comprises two playpipes 1, first liquid line 7 of plasma water (DIW) is provided, provides second liquid line, 9, the first liquid lines 7 and second liquid line 9 of 0.2% 3 HR-001 (BTA) to be connected to one the 3rd liquid line 10 jointly.The 3rd liquid line 10 is connected respectively to two playpipes 1, provides the mixing material of plasma water and three HR-001s to give two playpipes 1.Three HR-001s can react with the copper (Cu) on wafer 5 surfaces and can prevent the diaphragm that wafer 5 is corroded to form.
Be distributed with three atomizers 3 on each playpipe 1, these three atomizers 3 are arranged in a row.Wafer 5 can place in the middle of two playpipes 1.Three atomizers 3 are respectively 31,32 and 33.Atomizer 32 correspondences the diameter of wafer 5, atomizer 31 and 33 respectively corresponding the two edges of wafer 5.
See also Fig. 4, the respectively vertical wafers of atomizer 31 and 33 5 surfaces are provided with, and the atomizer 32 in the middle of being positioned at is inclined upwardly, and and wafer between angle be acute angle so that the liquid of these atomizer 32 ejections can cover the diameter of wafer 5.
In other embodiment of the utility model, also can adjust the angle of atomizer 31 and 33, as long as the liquid of three nozzle 3 injections can cover all surfaces of wafer 5.
In other embodiment of the utility model, three nozzles 3 also can be provided with perpendicular to wafer 5 surfaces, only need to change the shape of playpipe 1, and all surfaces that makes the spray regime that is installed in 1 three nozzles 3 of playpipe can cover wafer 5 gets final product.
The atomizer 32 of injection apparatus of the present utility model is inclined upwardly, thereby the spray regime that the surface that guarantees wafer 5 can injected device covers, prevent that the liquid that wafer 5 surfaces are corroded from having covered wafer 5 all surfaces, like this, surpassed expection even wait for the time that enters manufacturing process for cleaning, can prevent effectively that also wafer 5 is by the upward residual lapping liquid corrosion in its surface.In addition, the utility model is set up a liquid line 9, and this liquid line 9 injects 0.2% 3 HR-001, can better protect wafer 5 surfaces, and the probability that wafer 5 is corroded drops to minimum.

Claims (4)

1. injection apparatus, it comprises one first liquid line, two playpipes that are connected respectively to this first liquid line, three atomizers that are arranged in a row distribute on two playpipes, it is characterized in that: the diameter setting of the corresponding wafer of described at least one atomizer, the spray regime of this atomizer covers the diameter of this wafer.
2. injection apparatus as claimed in claim 1 is characterized in that: the angle between at least one atomizer and the wafer is an acute angle, makes the spray regime of nozzle can cover the first half of wafer.
3. injection apparatus as claimed in claim 1, it is characterized in that: described injection apparatus also comprises one second liquid line, first liquid line and second liquid line are connected to one the 3rd liquid line jointly, the 3rd liquid line is connected respectively to two playpipes, to send the mixing material from first liquid line and second liquid line to two playpipes.
4. injection apparatus as claimed in claim 1 is characterized in that: first liquid line provides plasma liquid, and second liquid line provides 0.2% 3 HR-001.
CNU2007200676221U 2007-03-06 2007-03-06 Ejection apparatus Expired - Lifetime CN201017856Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2007200676221U CN201017856Y (en) 2007-03-06 2007-03-06 Ejection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2007200676221U CN201017856Y (en) 2007-03-06 2007-03-06 Ejection apparatus

Publications (1)

Publication Number Publication Date
CN201017856Y true CN201017856Y (en) 2008-02-06

Family

ID=39058355

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2007200676221U Expired - Lifetime CN201017856Y (en) 2007-03-06 2007-03-06 Ejection apparatus

Country Status (1)

Country Link
CN (1) CN201017856Y (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437013A (en) * 2011-08-29 2012-05-02 上海华力微电子有限公司 Built-in wafer cleaning device for chemical mechanical polishing (CMP) machine table
CN102522321A (en) * 2011-11-30 2012-06-27 上海华力微电子有限公司 Cleaning method for cleaning system in chemical and mechanical grinding
CN103100964A (en) * 2011-11-11 2013-05-15 中芯国际集成电路制造(上海)有限公司 Metal grinding protecting device, metal grinding protecting method and chemical machinery grinding system
CN110299311A (en) * 2019-06-21 2019-10-01 德淮半导体有限公司 A kind of wafer cleaning drying device and method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437013A (en) * 2011-08-29 2012-05-02 上海华力微电子有限公司 Built-in wafer cleaning device for chemical mechanical polishing (CMP) machine table
CN103100964A (en) * 2011-11-11 2013-05-15 中芯国际集成电路制造(上海)有限公司 Metal grinding protecting device, metal grinding protecting method and chemical machinery grinding system
CN103100964B (en) * 2011-11-11 2015-11-25 中芯国际集成电路制造(上海)有限公司 Metal grinding protective device and guard method, chemical machinery polishing system
CN102522321A (en) * 2011-11-30 2012-06-27 上海华力微电子有限公司 Cleaning method for cleaning system in chemical and mechanical grinding
CN102522321B (en) * 2011-11-30 2014-07-09 上海华力微电子有限公司 Cleaning method for cleaning system in chemical and mechanical grinding
CN110299311A (en) * 2019-06-21 2019-10-01 德淮半导体有限公司 A kind of wafer cleaning drying device and method

Similar Documents

Publication Publication Date Title
JPH08318181A (en) Washer and washing method
CN201017856Y (en) Ejection apparatus
CN101590655A (en) Topping machanism
CN102825019A (en) Washing system and method for cleaning moving web
CN101620982B (en) Method for cleaning wafer and cleaning device
CN203631506U (en) Cleaning device used for cleaning wafer
CN202174489U (en) Wafer cleaning device and chemical mechanical lapping device
CN204148064U (en) A kind of cleaning device of liquid nozzle and cleaning platform
CN201500604U (en) Two-fluid spray nozzle
CN203630510U (en) Photoresist recycling system
CN203046014U (en) Silicon wafer washing device
CN106141905A (en) A kind of grinding wafer head cleans device and cleaning method
CN103418529B (en) A kind of spray-bonding craft
CN207632892U (en) A kind of etching machines
CN201625605U (en) Spray device and cleaning machine
CN203507736U (en) Spray adsorption tower
CN201702036U (en) Centrifugal separation cleaning device
CN202704478U (en) Water spraying and dust extracting device and coal conveying device using thereof
CN101992159A (en) Two-fluid nozzle
CN102129959A (en) Wafer cleaning device and method for cleaning wafer by using same
CN101693227A (en) Spray head structure of spray pipe in cleaning section of cold-roll steel sheet coating line
CN101320225B (en) Deionized water nozzle device and its spraying and brushing method
CN105903583A (en) High-pressure sprayer special for surface cleaning of pressure cylinder
CN203875045U (en) Stirring main machine and cleaning device thereof
CN204100896U (en) A kind of air cooler heat exchange pipe cleaning device for outer walls

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

Effective date: 20130217

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING

TR01 Transfer of patent right

Effective date of registration: 20130217

Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone

Patentee after: Semiconductor Manufacturing International (Beijing) Corporation

Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18

Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080206