TW201817501A - Apparatus for substrate wet processing - Google Patents

Apparatus for substrate wet processing Download PDF

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Publication number
TW201817501A
TW201817501A TW106136583A TW106136583A TW201817501A TW 201817501 A TW201817501 A TW 201817501A TW 106136583 A TW106136583 A TW 106136583A TW 106136583 A TW106136583 A TW 106136583A TW 201817501 A TW201817501 A TW 201817501A
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substrate
tank
processing
cleaning
immersion
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TW106136583A
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Chinese (zh)
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TWI645915B (en
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馮傳彰
吳庭宇
蔡文平
劉茂林
李威震
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辛耘企業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Level Indicators Using A Float (AREA)
  • Weting (AREA)

Abstract

The present invention discloses an apparatus for substrate wet processing. The apparatus includes an immersion chamber, a spray chamber and a rinse and drying chamber. The substrate is immersed in chemical liquid in the immersion chamber. The spray chamber includes a substrate reverse stage, the substrate is laid on the substrate reverse stage and is undertaken the spray process. After the spray process, the substrate is rinsed and dried in the rinse and drying chamber.

Description

基板溼處理裝置Substrate wet processing device

本發明係關於一種基板溼處理裝置，用以對一基板進行一溼處理程序，溼處理程序包括一浸漬處理程序、一噴洗處理程序以及一清洗乾燥程序，其中於基板進行噴洗處理程序將基板呈倒置狀態之基板溼處理裝置。The invention relates to a substrate wet processing device for performing a wet processing program on a substrate. The wet processing program includes an immersion processing program, a spray cleaning processing program, and a cleaning and drying program. The spray cleaning processing program is performed on the substrate. A substrate wet processing device having a substrate in an inverted state.

在半導體製程中，需對基板（如晶圓）進行多道清潔程序，以移除基板表面的雜質。而在以微影蝕刻於基板形成圖案後，也必須藉由多道清潔程序以去除光阻（Photo Resistor, PR）或金屬膜（Metal Film）。一種傳統製程是以批次處理基板，將基板一整批同時處理，有處理效果不精確的問題。另一種傳統製程雖是使用單基板水平式處理，然而於清洗步驟，當基板為採正置旋轉清洗，在清洗過程中基板與清洗液所產出之去除物或剝離物將會回沾汙損基板。鑒於以上傳統製程在處理過程之效果不精確或基板汙損等問題，現有技術確有改進之必要。In the semiconductor process, multiple cleaning processes are performed on the substrate (such as a wafer) to remove impurities on the surface of the substrate. After lithographic etching is used to form a pattern on the substrate, multiple cleaning procedures must also be used to remove the photo resist (PR) or metal film. A traditional process is to process substrates in batches, and process the substrates in batches at the same time, which has the problem of inaccurate processing effects. Although another traditional process uses a single substrate for horizontal processing, in the cleaning step, when the substrate is cleaned by upright rotation, the removal or peeling of the substrate and the cleaning solution will be contaminated during the cleaning process. Substrate. In view of the above problems of inaccurate processing effects or substrate fouling in the traditional process, the prior art does need to improve.

本發明係關於，用以對一基板進行一溼處理程序，溼處理程序包括一浸漬處理程序、一噴洗處理程序以及一清洗乾燥程序，其中於基板噴洗處理程序將基板呈倒置狀態之基板溼處理裝置。The invention relates to a wet processing program for a substrate. The wet processing program includes an immersion processing program, a spray cleaning processing program, and a cleaning and drying program, wherein the substrate is placed in an inverted state in the substrate spray processing program. Wet processing device.

此種基板溼處理裝置，用來對基板進行溼處理程序，其中溼處理程序包括浸漬處理程序、噴洗處理程序以及清洗乾燥程序。基板溼處理裝置包括浸漬處理槽、噴洗處理槽以及清洗乾燥槽，浸漬處理槽用以對基板進行浸漬處理程序；噴洗處理槽，用以對基板進行噴洗處理程序，噴洗處理槽包括基板倒置載台，其中基板放置於基板倒置載台；清洗乾燥槽，用以對基板進行清洗乾燥程序；以及處理程序控制單元，電性連接浸漬處理槽、噴洗處理槽以及清洗乾燥槽，處理程序控制單元控制基板在基板溼處理裝置內之溼處理程序。Such a substrate wet processing device is used to perform a wet processing program on a substrate, wherein the wet processing program includes an immersion processing program, a spray cleaning processing program, and a cleaning and drying program. The substrate wet processing device includes an immersion processing tank, a spray cleaning processing tank, and a cleaning and drying tank. The immersion processing tank is used to perform a dipping processing program on the substrate; the spray cleaning processing tank is used to perform a spray cleaning processing program on the substrate. The spray cleaning processing tank includes A substrate inversion stage, in which the substrate is placed on the substrate inversion stage; a cleaning and drying tank for cleaning and drying the substrate; and a processing program control unit, which is electrically connected to the immersion treatment tank, the spray cleaning treatment tank, and the cleaning and drying tank, and processes The program control unit controls the wet processing program of the substrate in the substrate wet processing device.

本發明於基板噴洗處理程序透過將基板倒置於槽內進行噴洗處理，在噴洗過程中相較傳統基板非倒置狀態，更易於清除去除物或剝離物，並防止回沾等問題。In the substrate spray cleaning process, the substrate is sprayed and washed by placing the substrate upside down in the tank. Compared with the traditional non-inverted state of the substrate during the spray cleaning process, it is easier to remove the removed matter or peeling off, and prevent problems such as re-staining.

本發明也揭露將浸漬處理槽與噴洗處理槽設於同一槽體之基板溼處理裝置，以減少傳送時間並避免產生藥液交互汙染。The invention also discloses a substrate wet processing device in which the immersion processing tank and the spray cleaning processing tank are arranged in the same tank body, so as to reduce the transfer time and avoid cross-contamination of chemical liquid.

本發明也揭露將浸漬處理槽、噴洗處理槽以及清洗乾燥槽設於同一槽體之基板溼處理裝置，在溼處理程序過程中可以形成一密閉空間，除了減少整個處理程序之傳送時間並避免產生藥液交互汙染外，更能防止化學氣體逸散之問題。The invention also discloses that the substrate wet processing device in which the immersion processing tank, the spray cleaning processing tank and the cleaning and drying tank are arranged in the same tank body can form a closed space during the wet processing process, in addition to reducing the transmission time of the entire processing process and avoiding In addition to the cross-contamination of chemicals and liquid, the problem of chemical gas escape can be prevented.

本發明更揭露在清洗乾燥程序將基板轉為正置進行清洗乾燥，以防止清洗乾燥後的去離子水掉入藥液中汙染。The invention further discloses that the substrate is turned upside down for cleaning and drying during the cleaning and drying process, so as to prevent the deionized water after cleaning and drying from falling into the chemical solution to be contaminated.

為能讓 貴審查委員能更瞭解本發明之技術內容，特舉較佳具體實施例說明如下。以下請參考圖1關於本發明第一實施例之基板溼處理裝置之示意圖。In order to make your reviewing committee better understand the technical content of the present invention, specific preferred embodiments are described below. Please refer to FIG. 1 for a schematic diagram of a substrate wet processing apparatus according to a first embodiment of the present invention.

如圖1A所示，本發明揭露一種基板溼處理裝置1，用以對一基板90進行一溼處理程序，其中溼處理程序包括一浸漬處理程序、一噴洗處理程序以及一清洗乾燥程序。根據本發明之一實施例，基板溼處理裝置1包括浸漬處理槽10、噴洗處理槽20、清洗乾燥槽30以及處理程序控制單元40，其中處理程序控制單元40電性連接浸漬處理槽10、噴洗處理槽20以及清洗乾燥槽30，且處理程序控制單元40控制基板90在基板溼處理裝置1內之溼處理程序。As shown in FIG. 1A, the present invention discloses a substrate wet processing apparatus 1 for performing a wet processing procedure on a substrate 90, wherein the wet processing procedure includes an immersion processing procedure, a spray cleaning processing procedure, and a cleaning and drying procedure. According to an embodiment of the present invention, the substrate wet processing apparatus 1 includes an immersion processing tank 10, a spray cleaning processing tank 20, a cleaning and drying tank 30, and a processing program control unit 40. The processing program control unit 40 is electrically connected to the immersion processing tank 10, The processing tank 20 is spray-washed and the drying tank 30 is cleaned, and the processing program control unit 40 controls the wet processing program of the substrate 90 in the substrate wet processing apparatus 1.

如圖1A、圖1B與圖1C所示，在第一實施例中，浸漬處理槽10、噴洗處理槽20與清洗乾燥槽30為各自獨立的槽體，且處理程序控制單元40進一步包括一輸送載具41，基板90之溼處理程序分別在浸漬處理槽10、噴洗處理槽20以及清洗乾燥槽30進行，並由輸送載具41持取基板90先置入浸漬處理槽10進行藥液的浸漬處理程序。在此須注意的是，在本實施例中，處理程序控制單元40是由一控制器或電腦所執行之控制程序，輸送載具41為機械手臂，但本發明不以本實施例為限。As shown in FIGS. 1A, 1B, and 1C, in the first embodiment, the dipping treatment tank 10, the spray cleaning treatment tank 20, and the washing and drying tank 30 are independent tanks, and the processing program control unit 40 further includes a The wet processing procedures of the conveyance carrier 41 and the substrate 90 are performed in the immersion treatment tank 10, the spray treatment tank 20, and the washing and drying tank 30, respectively. The substrate 90 is held by the conveyance carrier 41 into the immersion treatment tank 10 to perform the chemical solution. Procedure for dipping. It should be noted here that in this embodiment, the processing program control unit 40 is a control program executed by a controller or a computer, and the conveyance carrier 41 is a robot arm, but the present invention is not limited to this embodiment.

根據本發明之一具體實施例，進行浸漬處理程序時更包括控制處理液溫度、控制處理液流場以及搖動基板90之至少其一。According to a specific embodiment of the present invention, at least one of controlling the temperature of the processing liquid, controlling the flow field of the processing liquid, and shaking the substrate 90 is performed when performing the dipping processing program.

在本實施例中，浸漬處理程序如圖1B所示浸漬處理槽10可以容置複數個垂直擺放的基板90，如圖1C所示浸漬處理槽10a可以容置複數個水平擺放的基板90，以進行複數片基板浸漬處理。In this embodiment, as shown in FIG. 1B, the immersion treatment program 10 can accommodate a plurality of substrates 90 placed vertically, and as shown in FIG. 1C, the immersion treatment tank 10a can accommodate a plurality of substrates 90 placed horizontally. To immerse a plurality of substrates.

當浸漬處理槽10進行複數片基板浸漬處理時，處理程序控制單元40可以分別控制各基板90置入浸漬處理槽10之浸漬時序為相同或不同。處理程序控制單元40藉由輸送載具41分別控制每一基板90於浸漬處理槽10之浸漬處理程序。其中，同一製程條件之每片基板90分別經過相同的浸漬處理時間後，再依序移至噴洗處理槽20。由於每片基板90的浸漬處理時間相同，故可避免因浸漬時間不同而造成清洗程度的差異，進而可提高良率。又，處理程序控制單元40可依據製程需求，處理不同製程條件之複數基板90。不同製程條件所需的浸漬處理時間有所不同，可藉由處理程序控制單元40分別控制每一基板90所需之特定的浸漬處理時間。When a plurality of substrates are immersed in the immersion processing tank 10, the processing program control unit 40 may control the immersion timing of each substrate 90 into the immersion processing tank 10 to be the same or different. The processing program control unit 40 controls the immersion processing program of each substrate 90 in the immersion processing tank 10 by the conveyance carrier 41. Wherein, after each substrate 90 of the same process condition has passed the same immersion processing time, it is sequentially moved to the spray processing tank 20. Since the immersion processing time of each substrate 90 is the same, the difference in the degree of cleaning caused by the different immersion time can be avoided, and the yield can be improved. In addition, the processing program control unit 40 can process a plurality of substrates 90 with different processing conditions according to the processing requirements. The immersion processing time required for different process conditions is different. The specific immersion processing time required for each substrate 90 can be controlled by the processing program control unit 40, respectively.

另外也可以控制使各基板90浸漬處理所需的時間大於噴洗處理所需時間，使各基板90上的待處理物可有效去除(例如光阻及金屬膜可有效脫落)。而且處理程序控制單元40可以依據浸漬處理程序所需時間與噴洗處理程序所需時間之一時間差值，排程各基板90置入浸漬處理槽10之浸漬時序。以各基板90處理之先後順序，以第一基板、第二基板為例，先後排程第一基板、第二基板置入浸漬處理槽10各別進行浸漬處理程序，當第一基板浸泡完成後，移送至噴洗處理槽20，並當第二基板浸泡完成時，第一基板亦已噴洗完成而移至下一程序（例如清洗乾燥槽30）。因此，處理程序控制單元40可直接自浸漬處理槽10持取第二基板，並移送至噴洗處理槽20，而不會有任何阻礙，可有效控制各基板90之浸漬處理時間。In addition, the time required for the immersion process of each substrate 90 can be controlled to be longer than the time required for the spray cleaning process, so that the object to be processed on each substrate 90 can be effectively removed (for example, the photoresist and the metal film can be effectively peeled off). In addition, the processing program control unit 40 can schedule the dipping sequence of the substrates 90 into the dipping processing tank 10 according to a time difference between the time required by the dipping processing program and the time required by the spray cleaning processing program. Taking the order of processing of each substrate 90, taking the first substrate and the second substrate as an example, the first substrate and the second substrate are scheduled in the immersion treatment tank 10 and the immersion treatment program is performed separately. , Transfer to the spray cleaning processing tank 20, and when the second substrate is soaked, the first substrate has also been spray cleaned and moved to the next procedure (such as cleaning and drying the tank 30). Therefore, the processing program control unit 40 can directly hold the second substrate from the immersion processing tank 10 and transfer it to the spray processing tank 20 without any obstruction, and can effectively control the immersion processing time of each substrate 90.

如圖1A所示，浸漬處理程序完成後，輸送載具41持取基板90置入噴洗處理槽20進行噴洗處理程序，如圖1D所示，此時，基板90放置於噴洗處理槽20之基板倒置載台21。根據本發明之一具體實施例，基板倒置載台21設有基板固持元件(圖未示)，以固持基板90倒置進行噴洗處理程序。噴洗處理槽20設有至少一回收單元22、22a，其中處理液噴嘴80提供噴洗處理液100，在基板倒置載台21固持基板90旋轉狀態下，對基板90進行噴洗，並藉由回收單元22、22a回收噴洗處理液100。As shown in FIG. 1A, after the immersion processing program is completed, the conveyance carrier 41 holds the substrate 90 and places it in the spray processing tank 20 to perform the spray processing process, as shown in FIG. 1D. At this time, the substrate 90 is placed in the spray processing tank 20 的 板 倒 载 台 21。 20 of the substrate inversion stage 21. According to a specific embodiment of the present invention, the substrate inversion stage 21 is provided with a substrate holding element (not shown), and the substrate 90 is inverted to perform a spray cleaning process. The spray cleaning processing tank 20 is provided with at least one recovery unit 22, 22a, wherein the processing liquid nozzle 80 provides the spray cleaning processing liquid 100, and the substrate 90 is spray-washed while the substrate inversion stage 21 holds the substrate 90 in a rotating state, and The recovery units 22 and 22a recover the spray cleaning treatment liquid 100.

如圖1D所示，亦可設置複數個回收單元22、22a，其中處理液噴嘴80，可以提供不同的噴洗處理液100，並藉由對應各別噴洗處理液之回收單元22或回收單元22a，對應回收不同噴洗處理液。As shown in FIG. 1D, a plurality of recovery units 22 and 22a can also be provided. The treatment liquid nozzle 80 can provide different spray cleaning treatment liquids 100, and the recovery units 22 or recovery units corresponding to the respective spray cleaning treatment liquids can be provided. 22a, correspondingly recovering different spray cleaning treatment liquids.

根據本發明之一實施例，包括一氣體噴洗單元(圖未示)，其設置於噴洗處理槽20及浸漬處理槽10之至少其一之上方，對該基板90移出槽體時進行氣體噴洗，可噴除基板90上的殘液，更進一步降低殘液的殘留量。氣體噴洗單元設置於槽體上方或槽壁上方，本發明並不限制。According to an embodiment of the present invention, it includes a gas spray cleaning unit (not shown), which is disposed above at least one of the spray processing tank 20 and the immersion processing tank 10, and performs gas when the substrate 90 is removed from the tank. Spray cleaning can spray out the residual liquid on the substrate 90, and further reduce the residual amount of the residual liquid. The gas spray washing unit is disposed above the tank body or above the tank wall, which is not limited in the present invention.

基板90經藥液噴洗處理後，輸送載具41再將基板90持取置入清洗乾燥槽30，以處理液(例如去離子水)進行清洗乾燥程序，以完成基板90的溼處理程序，如圖1E所示，基板90得直立放置於清洗乾燥槽30內以便進行清洗乾燥程序。根據本發明之一具體實施例，如圖1F所示，基板90得水平放置於清洗乾燥槽30a內，進行清洗並旋轉乾燥，以進行清洗乾燥程序。After the substrate 90 is spray-washed with the chemical solution, the conveyance carrier 41 holds the substrate 90 into the cleaning and drying tank 30, and performs a cleaning and drying process with a processing liquid (for example, deionized water) to complete the wet processing process of the substrate 90. As shown in FIG. 1E, the substrate 90 must be placed upright in the cleaning and drying tank 30 to perform the cleaning and drying process. According to a specific embodiment of the present invention, as shown in FIG. 1F, the substrate 90 may be horizontally placed in the cleaning and drying tank 30a, cleaned and spin-dried to perform a cleaning and drying process.

圖2到圖3是本發明第二實施例之示意圖，在第二實施例中基板溼處理裝置1a之浸漬處理槽10c與噴洗處理槽20為同一槽體，且浸漬處理槽10c位於噴洗處理槽20下方，並由處理程序控制單元40控制將完成浸漬處理程序之基板90由浸漬處理槽10c上升置入噴洗處理槽20，接續進行噴洗處理程序。2 to 3 are schematic diagrams of a second embodiment of the present invention. In the second embodiment, the dipping treatment tank 10c of the substrate wet processing device 1a is the same as the spray processing tank 20, and the dipping processing tank 10c is located in the spray cleaning. Below the processing tank 20, the processing program control unit 40 controls the substrate 90 that has completed the immersion processing program to rise from the immersion processing tank 10c into the spray cleaning processing tank 20, and subsequently performs the spray cleaning processing program.

根據本發明之一具體實施例，如圖2所示，基板溼處理裝置1a設有一載台驅動模組60，載台驅動模組60與基板倒置載台21電性連接，將基板倒置載台21下降置入浸漬處理槽10c，以對基板90進行浸漬處理程序，並於完成浸漬處理程序後，載台驅動模組60將基板倒置載台21上升置入20噴洗處理槽，對基板90進行噴洗處理程序。在本實施例中，載台驅動模組60是驅動馬達，但本發明不以此為限，其他可用來驅動基板倒置載台21之裝置皆適用。According to a specific embodiment of the present invention, as shown in FIG. 2, the substrate wet processing device 1 a is provided with a stage driving module 60. The stage driving module 60 is electrically connected to the substrate inversion stage 21, and the substrate is inverted. 21 is lowered and placed in the immersion treatment tank 10c to perform the immersion treatment process on the substrate 90. After the immersion treatment process is completed, the stage driving module 60 raises the substrate upside-down stage 21 into the 20 spray processing treatment tank, Perform a spray cleaning process. In this embodiment, the stage driving module 60 is a driving motor, but the present invention is not limited thereto, and other devices that can be used to drive the substrate inversion stage 21 are applicable.

如圖2所示，在進行浸漬處理程序時，載台驅動模組60將基板倒置載台21下降置入浸漬處理槽10c，以對基板90進行浸漬處理程序，本實施例之浸漬處理槽10c可分為內槽區11與外槽區12，當載台驅動模組60驅動基板倒置載台21將基板90倒置進入內槽區11的浸泡藥液200內，浸泡藥液200會由內槽區11滿溢至外槽區12進行藥液循環，其中亦可進行循環控溫。根據一實施例，基板倒置載台21固持基板90旋轉狀態下，此時基板90可旋轉均勻受到浸泡藥液200影響及受溫處理，浸漬處理程序完成後，載台驅動模組60驅動基板倒置載台21上升離開浸泡藥液200。As shown in FIG. 2, during the immersion treatment process, the stage driving module 60 lowers the substrate inversion stage 21 into the immersion treatment tank 10 c to perform the immersion treatment process on the substrate 90. The immersion treatment tank 10 c of this embodiment It can be divided into the inner tank area 11 and the outer tank area 12. When the stage driving module 60 drives the substrate inversion stage 21 to invert the substrate 90 into the immersion liquid 200 in the inner tank area 11, the immersion liquid 200 will pass from the inner tank. The area 11 overflows to the outer tank area 12 for circulation of the medicinal solution, and the temperature of the circulation can also be controlled. According to an embodiment, when the substrate inversion stage 21 holds the substrate 90 in a rotating state, the substrate 90 can rotate evenly under the influence of the immersion chemical solution 200 and be subjected to a temperature treatment. After the immersion treatment process is completed, the stage driving module 60 drives the substrate upside down. The stage 21 rises and leaves the immersion solution 200.

根據本發明之一具體實施例，進行浸漬處理程序時包括控制處理液(浸泡藥液200)溫度、控制處理液(浸泡藥液200)流場以及搖動該基板90之至少其一，並於完成浸漬處理程序後，如圖3所示，載台驅動模組60將基板倒置載台21上升置入噴洗處理槽20，以對基板90進行噴洗處理程序。According to a specific embodiment of the present invention, when performing the immersion processing procedure, it includes controlling the temperature of the processing liquid (immersion chemical liquid 200), controlling the flow field of the processing liquid (immersion chemical liquid 200), and shaking at least one of the substrates 90, and is completed After the immersion processing procedure, as shown in FIG. 3, the stage driving module 60 raises the substrate inversion stage 21 into the spray processing tank 20 to perform a spray cleaning process on the substrate 90.

根據圖3，噴洗處理槽20設有至少一回收單元22、22a回收噴洗處理液100，而未噴濺至回收單元22、22a之噴洗處理液100將落入位於噴洗處理槽20下側之浸漬處理槽10c。其中可藉由提高基板轉速，讓噴洗處理液100噴洗後離心力旋轉至回收單元22、22a內進行回收。According to FIG. 3, the spray-washing treatment tank 20 is provided with at least one recovery unit 22, 22 a to recover the spray-washing treatment liquid 100, and the spray-washing treatment liquid 100 that has not been sprayed onto the recovery units 22, 22 a will fall into the spray-washing treatment tank 20 The lower immersion treatment tank 10c. Among them, by increasing the rotation speed of the substrate, the centrifugal force of the spray treatment liquid 100 after the spray cleaning is rotated into the recovery units 22 and 22a for recovery.

根據本發明之一具體實施例，參考圖3所示，噴洗處理液100與浸泡藥液200為相同成分之處理液(例如同一批之相同處理液，或新舊之相同處理液)，因此未噴濺至回收單元22、22a之噴洗處理液100將落入位於噴洗處理槽20下側之浸漬處理槽10c，噴洗處理液100混入至浸泡藥液200繼續使用，因此沒有處理液交叉汙染之問題。According to a specific embodiment of the present invention, as shown in FIG. 3, the spray treatment liquid 100 and the immersion chemical liquid 200 are processing liquids of the same composition (for example, the same processing liquid in the same batch, or the same processing liquid in old and new), so The spray treatment liquid 100 that has not been sprayed onto the recovery units 22 and 22a will fall into the immersion treatment tank 10c located at the lower side of the spray treatment tank 20, and the spray treatment liquid 100 will be mixed into the immersion chemical liquid 200 to continue to use, so there is no treatment liquid The problem of cross-contamination.

根據本發明之一具體實施例，溼處理程序更包括浸漬前噴洗處理程序，於進行浸漬前噴洗處理程序時，處理程序控制單元40將基板90置入基板倒置載台21以進行浸漬前噴洗處理程序後，載台驅動模組60再將基板90下降置入浸漬處理槽10c。According to a specific embodiment of the present invention, the wet processing program further includes a spray cleaning process before immersion. When performing the spray cleaning process before immersion, the processing program control unit 40 places the substrate 90 into the substrate inversion stage 21 to perform the immersion. After the spray cleaning process, the stage driving module 60 lowers the substrate 90 and places it into the immersion processing tank 10c.

在完成噴洗處理程序後，載台驅動模組60將完成噴洗處理程序之基板90與基板倒置載台21上升置入清洗乾燥槽30，以進行清洗乾燥程序，基板90在清洗乾燥槽30內以處理液(例如去離子水300)進行噴洗，專管排放清洗後的去離子水300後，可再進行氮氣噴洗乾燥高速旋乾。根據本發明之一實施例，清洗乾燥槽30於槽內供應一揮發性液體乾燥清洗，例如當基板90為具表面結構性基板，可有較佳之清洗效果。After the spray cleaning process is completed, the stage driving module 60 lifts the substrate 90 and the substrate inversion stage 21 that have completed the spray cleaning process into the cleaning and drying tank 30 to perform the cleaning and drying process. The substrate 90 is in the cleaning and drying tank 30 The inside is spray-washed with a treatment solution (for example, deionized water 300). After the cleaned deionized water 300 is discharged from the special tube, it may be spray-dried with nitrogen and dried at high speed. According to an embodiment of the present invention, the cleaning and drying tank 30 supplies a volatile liquid for dry cleaning in the tank. For example, when the substrate 90 is a substrate with a surface structure, a better cleaning effect can be obtained.

圖4到圖9是本發明第三實施例之示意圖，基板溼處理裝置之浸漬處理槽10c、噴洗處理槽20與清洗乾燥槽30皆於同一槽體，噴洗處理槽20與清洗乾燥槽30為同一槽體之不同回收單元，在溼處理程序過程中可以形成一密閉空間。4 to 9 are schematic diagrams of a third embodiment of the present invention. The immersion treatment tank 10c, the spray processing tank 20, and the cleaning and drying tank 30 of the substrate wet processing apparatus are all in the same tank body, and the spray cleaning processing tank 20 and the cleaning and drying tank 30 is a different recovery unit of the same tank, which can form a closed space during the wet processing process.

如圖4所示，在完成噴洗處理程序後，載台驅動模組60將完成噴洗處理程序之基板90與基板倒置載台21上升置入清洗乾燥槽30，對該基板90噴洗去離子水300，並由回收單元22b進行回收。根據本發明之一實施例，並將基板90轉為正置，以進行清洗乾燥程序，可防止清洗乾燥後的去離子水300掉入噴洗處理槽20造成汙染。在此步驟，基板倒置載台21轉為正置的時序可為置入清洗乾燥槽30之前或之後。As shown in FIG. 4, after the spray cleaning process is completed, the stage driving module 60 lifts the substrate 90 and the substrate inversion stage 21 that have completed the spray cleaning process into the cleaning and drying tank 30, and spray-cleans the substrate 90. The ionized water 300 is recovered by the recovery unit 22b. According to an embodiment of the present invention, the substrate 90 is turned upside down to perform a cleaning and drying process, which can prevent the deionized water 300 after cleaning and drying from falling into the spray processing tank 20 and causing pollution. In this step, the timing of turning the substrate inversion stage 21 into the upright position may be before or after the substrate is placed in the cleaning and drying tank 30.

如圖5所示，清洗乾燥槽30與噴洗處理槽20上下分離，以形成基板90輸出入口之示意圖。例如在清洗乾燥程序結束後，清洗乾燥槽30上升，完成基板溼處理程序。As shown in FIG. 5, the cleaning and drying tank 30 and the spray processing tank 20 are separated from each other to form a schematic diagram of the output inlet of the substrate 90. For example, after the cleaning and drying program is completed, the cleaning and drying tank 30 is raised to complete the substrate wet processing program.

根據本發明之一具體實施例，如圖6所示之基板溼處理裝置1b，清洗乾燥槽30之回收單元31緊鄰設置於噴洗處理槽20之回收單元22、22a，在進行噴洗處理程序時，處理液噴嘴80使用噴洗處理液100對基板90進行噴洗，並藉由至少一回收單元22、22a回收噴洗處理液100。噴洗處理程序結束後，如圖7所示，載台驅動模組60將完成噴洗處理程序之基板90以及基板倒置載台21上升至可由清洗乾燥槽30之回收單元31回收去離子水300的位置，進行下一階段之清洗乾燥程序，並由回收單元31回收清洗乾燥後之去離子水300。本實施例之說明及圖示雖是以基板倒置載台21升降以進行噴洗處理程序以及清洗乾燥程序為例，但不以此實施方式為限，例如可以透過升降各回收單元22、22a、31等的方式，以完成在同一個槽內進行噴洗處理程序以及清洗乾燥程序。因回收單元之形式及驅動方法非本發明改良的重點，故不再此贅述其細節。According to a specific embodiment of the present invention, as shown in the substrate wet processing device 1b shown in FIG. 6, the recovery unit 31 of the cleaning and drying tank 30 is next to the recovery units 22 and 22a disposed in the spray cleaning processing tank 20, and the spray cleaning process is performed. At this time, the processing liquid nozzle 80 spray-cleans the substrate 90 using the spray-cleaning processing liquid 100, and recovers the spray-cleaning processing liquid 100 by at least one recovery unit 22, 22a. After the spray cleaning process is finished, as shown in FIG. 7, the stage driving module 60 raises the substrate 90 and the substrate inversion stage 21 that have completed the spray cleaning process to the point where the deionized water 300 can be recovered by the recovery unit 31 of the cleaning and drying tank 30. , The washing and drying process is performed in the next stage, and the deionized water 300 after washing and drying is recovered by the recovery unit 31. Although the description and illustration of this embodiment are based on the example that the substrate inversion stage 21 is raised and lowered to perform a spray cleaning process and a cleaning and drying process, the embodiment is not limited to this. For example, each recovery unit 22, 22a, 31 and other methods to complete the spray washing process program and the washing and drying program in the same tank. Since the form and driving method of the recovery unit are not the focus of the improvement of the present invention, details thereof will not be repeated here.

根據本發明之一具體實施例，如圖8、圖9所示，基板溼處理裝置1c之浸漬處理槽10、噴洗處理槽20與清洗乾燥槽30皆於同一槽體，噴洗處理槽20與清洗乾燥槽30為同一槽體之不同回收單元(各回收單元之示意可參考圖4、圖5為例)，在溼處理程序過程中可以形成一密閉空間，基板溼處理裝置1c包括一槽體控制單元901，槽體控制單元901可控制清洗乾燥槽30與噴洗處理槽20形成密閉（圖9）或分離（圖8），在清洗乾燥槽30與噴洗處理槽20密閉時，基板90可以在清洗乾燥槽30進行清洗乾燥，防止清洗液噴濺至裝置外，以及防止化學氣體逸散之問題；而在清洗乾燥槽30與噴洗處理槽20分離時，可以形成基板輸出入口902，其中基板90藉由基板輸出入口902，輸出入單基板溼處理裝置1c。根據本發明之一具體實施例，槽體控制單元901可以是驅動馬達或機械手臂，但本發明不以此些實施方式為限。According to a specific embodiment of the present invention, as shown in FIGS. 8 and 9, the immersion processing tank 10, the spray cleaning processing tank 20, and the cleaning and drying tank 30 of the substrate wet processing device 1 c are all in the same tank body, and the spray cleaning processing tank 20 Different recovery units in the same tank body as the cleaning and drying tank 30 (refer to Figure 4 and Figure 5 for an illustration of each recovery unit) can form a closed space during the wet processing process. The substrate wet processing device 1c includes a tank. The body control unit 901 and the tank body control unit 901 can control the cleaning and drying tank 30 and the spray processing tank 20 to be sealed (FIG. 9) or separated (FIG. 8). When the cleaning and drying tank 30 and the spray processing tank 20 are sealed, the substrate 90 can be washed and dried in the washing and drying tank 30 to prevent the washing liquid from being sprayed to the outside of the device and prevent the problem of chemical gas escape; and when the washing and drying tank 30 is separated from the spray processing tank 20, a substrate output inlet 902 can be formed In which, the substrate 90 is outputted into the single substrate wet processing device 1c through the substrate output inlet 902. According to a specific embodiment of the present invention, the tank control unit 901 may be a driving motor or a robot arm, but the present invention is not limited to these embodiments.

如圖8與圖9所示，基板倒置載台21包括一倒置位置P1以及一正向位置P2，其中基板倒置載台21藉由載台驅動模組60驅動基板倒置載台21於倒置位置P1以及正向位置P2間翻轉。當基板溼處理裝置1c對基板90進行浸漬處理程序以及噴洗處理程序時，基板倒置載台21呈倒置位置P1，當基板溼處理裝置1c對基板90進行清洗乾燥程序時，基板倒置載台21呈正向位置P2。本實施例將基板濕處理程序整合在同一個槽中進行，除了縮短溼處理程序的處理時間、降低基板90在數個槽間轉換時，造成的噴洗處理液100或浸泡藥液200滲漏情況，並解決了在溼處理程序轉換時，處理液交互汙染以及化學氣體逸散等問題。As shown in FIG. 8 and FIG. 9, the substrate inversion stage 21 includes an inverted position P1 and a forward position P2. The substrate inversion stage 21 drives the substrate inversion stage 21 to the inverted position P1 by using the stage driving module 60. And flipped between forward position P2. When the substrate wet processing device 1c performs the immersion processing program and the spray cleaning processing program on the substrate 90, the substrate inversion stage 21 is in the inverted position P1. When the substrate wet processing device 1c performs the cleaning and drying process on the substrate 90, the substrate inversion stage 21 Takes forward position P2. In this embodiment, the substrate wet processing program is integrated in the same tank, in addition to shortening the processing time of the wet processing program and reducing the leakage of the spray cleaning processing solution 100 or the immersion chemical solution 200 when the substrate 90 is switched between several tanks. Situation, and solved the problems of cross-contamination of processing fluid and chemical gas escape during wet processing program conversion.

1,1a,1b,1c‧‧‧基板溼處理裝置 1,1a, 1b, 1c‧‧‧ substrate wet processing device

10,10a,10c‧‧‧浸漬處理槽 10,10a, 10c‧‧‧‧Immersion treatment tank

20‧‧‧噴洗處理槽 20‧‧‧Brush washing tank

21‧‧‧基板倒置載台 21‧‧‧ substrate inversion stage

30‧‧‧清洗乾燥槽 30‧‧‧Cleaning drying tank

40‧‧‧處理程序控制單元 40‧‧‧Processing program control unit

41‧‧‧輸送載具 41‧‧‧ Conveying Vehicle

60‧‧‧載台驅動模組 60‧‧‧stage drive module

22、22a、22b、31‧‧‧回收單元 22, 22a, 22b, 31‧‧‧ Recovery Unit

80‧‧‧處理液噴嘴 80‧‧‧ treatment liquid nozzle

801‧‧‧噴洗單元 801‧‧‧Brushing unit

90‧‧‧基板 90‧‧‧ substrate

901‧‧‧槽體控制單元 901‧‧‧Slot control unit

902‧‧‧基板輸出入口 902‧‧‧ substrate output inlet

P1‧‧‧倒置位置 P1‧‧‧ inverted position

P2‧‧‧正向位置 P2‧‧‧ forward position

200‧‧‧浸泡藥液 200‧‧‧ Soaking solution

300‧‧‧離子水 300‧‧‧ ionized water

100‧‧‧噴洗處理液 100‧‧‧ Spray treatment liquid

圖1A係本發明之第一實施例之基板溼處理裝置之示意圖。 圖1B係本發明之第一實施例之浸漬處理槽中，複數片基板垂直浸泡之示意圖。 圖1C係本發明之第一實施例之浸漬處理槽中，複數片基板水平浸泡之示意圖。 圖1D係本發明之第一實施例之噴洗處理槽之示意圖。 圖1E係本發明之第一實施例之清洗乾燥槽中，基板垂直處理之示意圖。 圖1F係本發明之第一實施例之清洗乾燥槽中，基板水平處理之示意圖。 圖2係本發明之第二實施例之基板進行浸漬程序之示意圖。 圖3係本發明之第二實施例之基板進行噴洗程序之示意圖。 圖4係本發明之第三實施例之示意圖。 圖5係本發明之第三實施例清洗乾燥槽與噴洗處理槽上下分離，以形成基板輸出入口之示意圖。 圖6係本發明之第三實施例之另一示意圖。 圖7係本發明之第三實施例之基板進行清洗乾燥程序之另一示意圖。 圖8係本發明之第三實施例之基板溼處理裝置作動示意圖。 圖9係本發明之第三實施例之基板溼處理裝置作動示意圖。FIG. 1A is a schematic diagram of a substrate wet processing apparatus according to a first embodiment of the present invention. FIG. 1B is a schematic diagram of vertical dipping of a plurality of substrates in an immersion treatment tank according to the first embodiment of the present invention. FIG. 1C is a schematic diagram of horizontal immersion of a plurality of substrates in an immersion treatment tank according to the first embodiment of the present invention. FIG. 1D is a schematic diagram of a spray-washing treatment tank according to the first embodiment of the present invention. FIG. 1E is a schematic diagram of vertical processing of a substrate in a cleaning and drying tank according to the first embodiment of the present invention. FIG. 1F is a schematic diagram of horizontal processing of a substrate in a cleaning and drying tank according to the first embodiment of the present invention. FIG. 2 is a schematic diagram of a dipping process of a substrate according to a second embodiment of the present invention. FIG. 3 is a schematic diagram of a substrate washing and spraying process according to a second embodiment of the present invention. FIG. 4 is a schematic diagram of a third embodiment of the present invention. FIG. 5 is a schematic view of a third embodiment of the present invention separating the cleaning and drying tank and the spray processing tank to form a substrate output inlet. FIG. 6 is another schematic diagram of the third embodiment of the present invention. FIG. 7 is another schematic diagram of a cleaning and drying process for a substrate according to a third embodiment of the present invention. FIG. 8 is a schematic diagram of the operation of the substrate wet processing apparatus according to the third embodiment of the present invention. FIG. 9 is a schematic diagram of the operation of the substrate wet processing apparatus according to the third embodiment of the present invention.

Claims (20)

一種基板溼處理裝置，用以對一基板進行一溼處理程序，其中該溼處理程序包括一浸漬處理程序、一噴洗處理程序以及一清洗乾燥程序，該基板溼處理裝置包括： 一浸漬處理槽，用以對該基板進行該浸漬處理程序； 一噴洗處理槽，該噴洗處理槽包括一基板倒置載台，其中該基板放置於該基板倒置載台，用以對該基板進行該噴洗處理程序； 一清洗乾燥槽，用以對該基板進行該清洗乾燥程序；以及 一處理程序控制單元，電性連接該浸漬處理槽、該噴洗處理槽以及該清洗乾燥槽，該處理程序控制單元控制該基板在該基板溼處理裝置內之該溼處理程序。A substrate wet processing device is used to perform a wet processing program on a substrate. The wet processing program includes an immersion processing program, a spray cleaning processing program, and a cleaning and drying program. The substrate wet processing device includes: an immersion processing tank For performing the immersion treatment program on the substrate; a spray cleaning treatment tank including a substrate inversion stage, wherein the substrate is placed on the substrate inversion stage for performing the spray cleaning on the substrate A processing program; a cleaning and drying tank for performing the cleaning and drying program on the substrate; and a processing program control unit electrically connected to the immersion processing tank, the spray cleaning processing tank, and the cleaning and drying tank, the processing program control unit Control the wet processing program of the substrate in the substrate wet processing device. 如申請專利範圍第1項所述之基板溼處理裝置，其中該浸漬處理槽可容置複數該基板，其中當該浸漬處理槽進行該浸漬處理程序時，該處理程序控制單元分別控制各該基板置入該浸漬處理槽之一浸漬時序。The substrate wet processing device according to item 1 of the scope of patent application, wherein the immersion processing tank can accommodate a plurality of the substrates, and when the immersion processing tank performs the immersion processing program, the processing program control unit controls each of the substrates separately One of the dipping treatment tanks is placed in the dipping sequence. 如申請專利範圍第2項所述之基板溼處理裝置，其中該處理程序控制單元分別控制各該基板進出該浸漬處理槽之時序。The substrate wet processing device according to item 2 of the scope of patent application, wherein the processing program control unit separately controls the timing of each substrate entering and leaving the immersion processing tank. 如申請專利範圍第3項所述之基板溼處理裝置，其中該處理程序控制單元控制對各該基板之該浸漬處理時間為相同，並排程各該基板分別置入該浸漬處理槽，以進行該浸漬處理程序。The substrate wet processing device according to item 3 of the scope of the patent application, wherein the processing program control unit controls the immersion processing time for each of the substrates to be the same, and schedules each of the substrates to be separately placed in the immersion processing tank to perform the Dip treatment procedure. 如申請專利範圍第3項所述之基板溼處理裝置，其中該處理程序控制單元分別控制對各該基板進行該浸漬處理程序之時間為不同，並排程各該基板置入該浸漬處理槽，以進行該浸漬處理程序。The substrate wet processing device described in item 3 of the scope of the patent application, wherein the processing program control unit separately controls the time for performing the immersion processing procedure on each of the substrates to be different, and schedules each of the substrates to be placed in the immersion processing tank to This dipping treatment procedure is performed. 如申請專利範圍第2項所述之基板溼處理裝置，其中對該基板之該浸漬處理程序所需時間大於該噴洗處理所需時間，該處理程序控制單元依據該浸漬處理程序所需時間與該噴洗處理程序所需時間之一時間差值，排程各該基板置入該浸漬處理槽之該浸漬時序。According to the substrate wet processing device described in the second item of the patent application scope, wherein the time required for the immersion processing procedure for the substrate is greater than the time required for the spray cleaning treatment, the processing program control unit is based on the time required for the immersion processing procedure and One time difference of the time required for the spray cleaning process, the immersion sequence of each substrate placed in the immersion treatment tank is scheduled. 如申請專利範圍第1項所述之基板溼處理裝置，其中該浸漬處理槽與該噴洗處理槽為同一槽體，該浸漬處理槽位於該噴洗處理槽下方，其中該處理程序控制單元將完成該浸漬處理程序之該基板上升置入該噴洗處理槽。The substrate wet processing device according to item 1 of the scope of the patent application, wherein the dipping processing tank is the same tank as the spray cleaning processing tank, the dipping processing tank is located below the spray cleaning processing tank, and the processing program control unit will The substrate that has completed the dipping process is raised into the spray processing tank. 如申請專利範圍第7項所述之基板溼處理裝置，其中使用一噴洗處理液對該基板進行該噴洗處理，該噴洗處理液將落入位於該噴洗處理槽下方之該浸漬處理槽進行回收。The substrate wet processing device according to item 7 of the scope of the patent application, wherein the substrate is subjected to the spray cleaning treatment using a spray cleaning treatment liquid, and the spray cleaning treatment liquid will fall into the immersion treatment located below the spray cleaning treatment tank. Tank for recycling. 如申請專利範圍第7項所述之基板溼處理裝置，其中該噴洗處理槽包括一回收單元，其中使用一噴洗處理液對該基板進行該噴洗處理，並藉由該回收單元回收該噴洗處理液，其中未噴濺至該回收單元之該噴洗處理液將落入位於該噴洗處理槽下方之該浸漬處理槽進行回收。The substrate wet processing device according to item 7 of the scope of the patent application, wherein the spray cleaning processing tank includes a recycling unit, wherein the substrate is subjected to the spray cleaning processing by using a spray cleaning processing solution, and the recycling is performed by the recycling unit. The spray treatment liquid, wherein the spray treatment liquid that has not been splashed onto the recovery unit will fall into the immersion treatment tank below the spray treatment tank for recovery. 如申請專利範圍第7項所述之基板溼處理裝置，其中該基板放置於該基板倒置載台，其中該基板溼處理裝置更包括一載台驅動模組，將該基板倒置載台下降置入該浸漬處理槽，以對該基板進行該浸漬處理程序，並於完成該浸漬處理程序後，載台驅動模組將該基板倒置載台上升置入該噴洗處理槽，對該基板進行該噴洗處理程序。The substrate wet processing device according to item 7 of the scope of the patent application, wherein the substrate is placed on the substrate inversion stage, and the substrate wet processing device further includes a stage driving module, and the substrate is placed in the inverted stage. The immersion treatment tank to perform the immersion treatment program on the substrate, and after the immersion treatment program is completed, the stage driving module raises the substrate upside down into the spray treatment tank, and performs the spray treatment on the substrate Wash process. 如申請專利範圍第10項所述之基板溼處理裝置，其中該溼處理程序更包括一浸漬前噴洗處理程序，該處理程序控制單元將該基板置入該基板倒置載台以進行該浸漬前噴洗處理程序後，該載台驅動模組將該基板倒置載台下降置入該浸漬處理槽，以對該基板進行該浸漬處理程序。The substrate wet processing device according to item 10 of the scope of the patent application, wherein the wet processing program further includes a pre-immersion spray cleaning processing program, and the processing program control unit places the substrate in the substrate inversion stage to perform the dipping After the spray cleaning process, the stage driving module lowers the substrate upside-down stage into the immersion treatment tank to perform the immersion treatment process on the substrate. 如申請專利範圍第7項所述之基板溼處理裝置，其中該噴洗處理槽包括複數處理液噴嘴，以對應提供不同之一噴洗處理液。The substrate wet processing device according to item 7 of the scope of the patent application, wherein the spray cleaning processing tank includes a plurality of processing liquid nozzles to correspondingly provide a different spray cleaning processing liquid. 如申請專利範圍第12項所述之基板溼處理裝置，其中該噴洗處理槽包括複數回收單元，以對應回收不同之該噴洗處理液。The substrate wet processing device according to item 12 of the patent application scope, wherein the spray cleaning processing tank includes a plurality of recovery units to correspondingly recover different spray cleaning processing liquids. 如申請專利範圍第7項所述之基板溼處理裝置，其中該浸漬處理槽、該噴洗處理槽與該清洗乾燥槽皆為同一槽體，該噴洗處理槽與該清洗乾燥槽為同一槽體之不同回收單元。The substrate wet processing device according to item 7 of the scope of the patent application, wherein the immersion processing tank, the spray cleaning processing tank and the cleaning and drying tank are all the same tank body, and the spray cleaning processing tank and the cleaning and drying tank are the same tank Different recovery units. 如申請專利範圍第14項所述之基板溼處理裝置，其中該槽體為一密閉式槽體。The substrate wet processing device according to item 14 of the patent application scope, wherein the tank is a closed tank. 如申請專利範圍第14項所述之基板溼處理裝置，其中該清洗乾燥槽位於該噴洗處理槽上方，其中該基板溼處理裝置更包括一載台驅動模組，將完成該噴洗處理之該基板與該基板倒置載台上升置入該清洗乾燥槽，以進行該清洗乾燥程序。The substrate wet processing device according to item 14 of the scope of the patent application, wherein the cleaning and drying tank is located above the spray cleaning processing tank, and the substrate wet processing device further includes a stage driving module, which will complete the spray cleaning processing. The substrate and the substrate inversion stage are raised into the cleaning and drying tank to perform the cleaning and drying process. 如申請專利範圍第16項所述之基板溼處理裝置，其中該載台驅動模組將位於該噴洗處理槽之該基板倒置載台轉為正置，將該基板以正置置入該清洗乾燥槽，以進行該清洗乾燥程序。The substrate wet processing device according to item 16 of the scope of the patent application, wherein the stage driving module turns the substrate inversion stage located in the spray processing tank into an upright position, and puts the substrate into the cleaning in an upright position. A drying tank to perform this washing and drying process. 如申請專利範圍第14項所述之基板溼處理裝置，包括一槽體控制單元，其中該槽體控制單元控制該清洗乾燥槽與該噴洗處理槽上下分離，形成一基板輸出入口，其中該基板藉由該基板輸出入口，輸出入該基板溼處理裝置。The substrate wet processing device according to item 14 of the scope of patent application, including a tank control unit, wherein the tank control unit controls the cleaning and drying tank to be separated from the spray processing tank to form a substrate output inlet, wherein The substrate is output to the substrate wet processing device through the substrate output inlet. 如申請專利範圍第1項所述之基板溼處理裝置，更包括一氣體噴洗單元，設置於該噴洗處理槽或該浸漬處理槽至少其一之上方，對該基板移出槽體時進行氣體噴洗。The substrate wet processing device described in item 1 of the patent application scope further includes a gas spray cleaning unit, which is disposed above at least one of the spray cleaning processing tank or the immersion processing tank, and performs gas when the substrate is removed from the tank. Spray wash. 如申請專利範圍第1項所述之基板溼處理裝置，其中該基板放置於該基板倒置載台，對該基板進行該溼處理程序，其中該基板溼處理裝置更包括一載台驅動模組用以驅動該基板倒置載台於一倒置位置以及一正向位置間翻轉，其中當該基板溼處理裝置對該基板進行該浸漬處理程序以及該噴洗處理程序時，該基板倒置載台呈該倒置位置，當該基板溼處理裝置對該基板進行清洗乾燥程序時，該基板倒置載台呈該正向位置。The substrate wet processing device according to item 1 of the scope of the patent application, wherein the substrate is placed on the substrate inversion stage, and the substrate is subjected to the wet processing program, wherein the substrate wet processing device further includes a stage driving module. The substrate inversion stage is driven to rotate between an inverted position and a forward position. When the substrate wet processing device performs the dipping process and the spray cleaning process on the substrate, the substrate inversion stage is in the inverted position. Position, when the substrate wet processing device performs a cleaning and drying process on the substrate, the substrate inversion stage assumes the forward position.
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