JP2007123559A - Device and method for treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate-treating device and a substrate treatment method, which clean the inside of a nozzle. <P>SOLUTION: A substrate treatment has a spin chuck 21 that retains the substrate W horizontally and rotates the substrate W around a vertical rotating shaft passing through the center of the substrate W. A treatment liquid supply pipe is inserted inside the spin chuck 21. A chemical solution or demineralized water is supplied to the treatment liquid supply pipe. At the tip of the treatment liquid supply pipe, a lower nozzle 27 is provided which discharges the chemical solution or demineralized water toward a vertically upper portion. While the discharge port of a nozzle 50 for chemical solution treatment opposes that of the lower nozzle 27, the demineralized water as a nozzle cleaning liquid is discharged toward the tip of the nozzle 50 for chemical solution treatment from the lower nozzle 27. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.

  2. Description of the Related Art Conventionally, a substrate processing apparatus has been used to perform various processes on a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, and a glass substrate for an optical disk.

  In the substrate processing apparatus, for example, by supplying a chemical solution such as BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid or ammonia to the substrate, Surface treatment of the substrate is performed (hereinafter referred to as chemical treatment).

  In a substrate processing apparatus that performs chemical liquid processing, chemical liquid deposits adhere to the tip of a nozzle that supplies the chemical liquid to the substrate. The chemical liquid deposit is generated by drying the chemical liquid adhering to the nozzle tip after the chemical liquid is supplied to the substrate by the nozzle.

  This phenomenon is particularly likely to occur when a chemical solution containing a salt such as a mixed solution of ammonium fluoride and hydrofluoric acid (BHF) or a mixed solution of ammonium fluoride and phosphoric acid is used.

  In addition, in a substrate processing apparatus that supplies an acidic chemical solution and an alkaline chemical solution to a substrate individually, when the nozzles that supply the chemical solutions are arranged close to each other, the components of the chemical solution that adhere to the nozzles are in the surrounding atmosphere. Salts may be formed by diffusing in and reacting with each other. Also in this case, deposits are likely to adhere to the nozzle tip.

  The deposit adhering to the nozzle tip grows every time the chemical solution is supplied to the substrate. In this case, the grown precipitate falls from the nozzle to the substrate, or the supply condition of the chemical solution supplied from the nozzle to the substrate changes, thereby causing a substrate processing failure.

  In order to remove deposits adhering to the nozzle tip, there is a chemical solution supply nozzle with a nozzle cleaning mechanism that can uniformly clean the nozzle tip (see Patent Document 1).

  The chemical solution supply nozzle with a nozzle cleaning mechanism includes a nozzle block having a through hole formed as a nozzle cleaning mechanism. By inserting the nozzle into the through hole of the nozzle block, a gap is formed between the outer peripheral surface of the nozzle and the inner peripheral surface of the nozzle block.

After the chemical liquid is supplied to the substrate by the nozzle, the nozzle is inserted into the nozzle block, and the cleaning liquid is supplied to the gap between the nozzle and the nozzle block. As a result, the cleaning liquid that flows into the gap between the nozzle and the nozzle block flows to the nozzle tip, thereby washing away the chemical that adheres to the nozzle tip. As a result, deposits are prevented from adhering to the nozzle tip.
Japanese Utility Model Publication No. 6-44137

  However, in the conventional nozzle cleaning mechanism as shown in Patent Document 1, since the nozzle is cleaned by supplying the cleaning liquid from the nozzle outer peripheral surface to the nozzle tip, the cleaning liquid is not supplied into the nozzle.

  Therefore, the chemical solution remains in the nozzle, and the remaining chemical solution is dried, and is generated as a precipitate inside the nozzle, particularly inside the chemical solution supply port at the tip of the nozzle that is easily in contact with the outside air. Thereby, the problem that the supply conditions of the chemical solution supplied from the nozzle to the substrate change or the inside of the nozzle is clogged with precipitates cannot be sufficiently solved.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of cleaning the inside of a nozzle, particularly the inside of a chemical solution supply port at the tip of the nozzle.

  (1) A substrate processing apparatus according to a first invention discharges a nozzle cleaning liquid from below toward a processing liquid nozzle having a processing liquid supply port for supplying a processing liquid onto the substrate and a processing liquid supply port of the processing liquid nozzle. And a cleaning liquid nozzle.

  In the substrate processing apparatus according to the first aspect, the processing liquid is supplied onto the substrate from the processing liquid supply port of the processing liquid nozzle when the substrate is processed. With the processing liquid nozzle positioned above the cleaning liquid nozzle, the nozzle cleaning liquid is discharged from the cleaning liquid nozzle toward the processing liquid supply port of the processing liquid nozzle.

  Thereby, the processing liquid adhering to the inside of the processing liquid supply port at the tip of the processing liquid nozzle can be washed away by the nozzle cleaning liquid discharged from the cleaning liquid nozzle. In addition, since a part of the nozzle cleaning liquid flows into the processing liquid nozzle from the processing liquid supply port, the processing liquid adhering to the inside of the processing liquid nozzle can be washed away.

  In this way, not only the inside of the processing liquid supply port of the processing liquid nozzle but also the inside of the processing liquid nozzle can be cleaned.

  (2) The substrate processing apparatus further includes substrate holding means for holding the substrate, and the cleaning liquid nozzle is provided below a position where the substrate should be held by the substrate holding means, and the substrate is not held by the substrate holding means. In this state, the nozzle cleaning liquid may be discharged toward the processing liquid supply port of the processing liquid nozzle located above the cleaning liquid nozzle.

  In this case, when the substrate is processed, the processing liquid is supplied to the substrate from the processing liquid nozzle located above the substrate while the substrate is held by the substrate holding unit. Further, the nozzle cleaning liquid is discharged from the cleaning liquid nozzle toward the processing liquid supply port of the processing liquid nozzle located above in a state where the substrate is not held by the substrate holding means. Thereby, the processing liquid adhering to the inside of the processing liquid supply port of the processing liquid nozzle and the inside of the processing liquid nozzle can be washed away.

  In such a configuration, in a state where the substrate is held by the substrate holding unit, the processing liquid is discharged from the cleaning liquid nozzle to perform processing using the processing liquid on the back surface of the substrate held by the substrate holding unit. Can do.

  As described above, the cleaning of the processing liquid nozzle and the processing of the back surface of the substrate can be performed using the common cleaning liquid nozzle. As a result, it is possible to clean the processing liquid nozzle while suppressing an increase in the size of the substrate processing apparatus.

  (3) The substrate processing apparatus may further include a driving unit that moves the processing liquid nozzle between an upper position of the substrate held by the substrate holding unit and a standby position outside the substrate.

  In this case, when the processing liquid is supplied from the processing liquid nozzle to the substrate and when the nozzle cleaning liquid is discharged from the cleaning liquid nozzle to the processing liquid nozzle, the processing liquid nozzle is moved from the standby position outside the substrate to a position above the substrate. Moving. When the processing liquid is not supplied to the substrate from the processing liquid nozzle (for example, after the processing liquid is supplied from the processing liquid nozzle to the substrate until the processing liquid is supplied to the substrate to be processed next). When the nozzle cleaning liquid is not discharged from the cleaning liquid nozzle to the processing liquid nozzle, the processing liquid nozzle moves to the standby position. This prevents the processing liquid from dropping from the processing liquid nozzle onto the substrate after the substrate has been processed with the processing liquid from the processing liquid nozzle (for example, when the substrate is being dried or when the substrate is unloaded). The

  (4) The substrate holding means may rotate the substrate around a vertical rotation axis, and the cleaning liquid discharge port of the cleaning liquid nozzle may be located on the rotation axis.

  In this case, since the cleaning liquid discharge port of the cleaning liquid nozzle can be positioned on the rotation axis of the substrate, it is easy to align the processing liquid nozzle when cleaning the processing liquid nozzle.

  (5) The cleaning liquid nozzle may further discharge a processing liquid for processing the substrate toward the back surface of the substrate while the substrate is held by the substrate holding means.

  In this case, the processing using the processing liquid can be performed on the back surface of the substrate held by the substrate holding means. Accordingly, the cleaning of the processing liquid nozzle and the processing of the back surface of the substrate can be performed using a common cleaning liquid nozzle. As a result, it is possible to clean the processing liquid nozzle while suppressing an increase in the size of the substrate processing apparatus.

  (6) The substrate processing apparatus includes a substrate holding unit that holds a substrate, and a processing liquid nozzle between an upper position of the substrate held by the substrate holding unit and a standby position outside the substrate held by the substrate holding unit. The cleaning liquid nozzle may discharge the nozzle cleaning liquid toward the processing liquid supply port of the processing liquid nozzle in a state where the processing liquid nozzle is in the standby position.

  In this case, when processing the substrate with the processing liquid from the processing liquid nozzle, the processing liquid nozzle moves to a position above the substrate held by the substrate holding means. When cleaning the processing liquid nozzle, the processing liquid nozzle moves to a standby position outside the substrate held by the substrate holding means.

  In the standby position, the nozzle cleaning liquid is discharged from the cleaning liquid nozzle toward the processing liquid supply port of the processing liquid nozzle. Thereby, the processing liquid adhering to the inside of the processing liquid supply port of the processing liquid nozzle and the inside of the processing liquid nozzle can be washed away.

  (7) When the nozzle cleaning liquid is discharged to the processing liquid nozzle by the cleaning liquid nozzle, at least one of the processing liquid nozzle and the cleaning liquid nozzle may swing relative to the other.

  In this case, the nozzle cleaning liquid is uniformly supplied to a wide area around the processing liquid supply port of the processing liquid nozzle, and the nozzle cleaning liquid enters the details inside the processing liquid nozzle. Thereby, the cleaning effect is further improved.

  Further, when a plurality of processing liquid nozzles are provided, if the arrangement of the plurality of processing liquid nozzles and the relative oscillation direction are set so that the nozzle cleaning liquid is applied to all of the plurality of processing liquid nozzles, a plurality of processing liquid nozzles are provided. The treatment liquid nozzle can be cleaned almost simultaneously.

  (8) A substrate processing method according to a second aspect of the present invention includes a processing liquid supply step for supplying a processing liquid onto a substrate from a processing liquid supply port of a processing liquid nozzle, and a period in which the processing liquid supply step is not performed. A nozzle cleaning liquid discharge step of discharging the nozzle cleaning liquid from below toward the processing liquid supply port of the processing liquid nozzle.

  In the substrate processing apparatus according to the second aspect of the invention, the processing liquid is supplied onto the substrate from the processing liquid supply port of the processing liquid nozzle when the substrate is processed with the processing liquid from the processing liquid nozzle. Further, when the processing liquid is not supplied from the processing liquid nozzle, the cleaning of the processing liquid nozzle is performed by discharging the nozzle cleaning liquid from below toward the processing liquid supply port of the processing liquid nozzle.

  Thereby, the processing liquid adhering to the inside of the processing liquid supply port of the processing liquid nozzle can be washed away with the nozzle cleaning liquid. In addition, since a part of the nozzle cleaning liquid flows into the processing liquid nozzle from the processing liquid supply port, the processing liquid adhering to the inside of the processing liquid nozzle can be washed away.

  In this way, not only the inside of the processing liquid supply port of the processing liquid nozzle but also the inside of the processing liquid nozzle can be cleaned.

  According to the present invention, the processing liquid adhering to the inside of the processing liquid supply port of the processing liquid nozzle can be washed away by the nozzle cleaning liquid discharged from the cleaning liquid nozzle. In addition, since a part of the nozzle cleaning liquid flows into the processing liquid nozzle from the processing liquid supply port, the processing liquid adhering to the inside of the processing liquid nozzle can be washed away. In this way, not only the inside of the processing liquid supply port of the processing liquid nozzle but also the inside of the processing liquid nozzle can be cleaned.

  Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings.

  In the following description, a substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, a substrate for an optical disk, and the like.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 has processing areas A and B, and a transfer area C between the processing areas A and B.

  In the processing region A, a control unit 4, fluid box units 2a and 2b, and substrate processing units 5a and 5b are arranged.

  1 are pipes, joints, valves, flow meters for supplying chemicals and rinsing liquids to the substrate processing units 5a and 5b and for disposal (drainage) from the substrate processing units 5a and 5b, respectively. Houses fluid-related equipment such as regulators, pumps, temperature controllers, and processing liquid storage tanks.

  In the substrate processing units 5a and 5b, substrate processing using a chemical solution (hereinafter, chemical processing and substrate processing using a rinsing solution (hereinafter referred to as rinsing processing) is performed. In the present embodiment, the substrate processing units 5a and 5b are used. The chemical solution is BHF (buffered hydrofluoric acid), and the rinsing solution is pure water.

  In the processing region B, fluid box portions 2c and 2d and substrate processing portions 5c and 5d are arranged. Each of the fluid box units 2c and 2d and the substrate processing units 5c and 5d has the same configuration as the fluid box units 2a and 2b and the substrate processing units 5a and 5b, and the substrate processing units 5c and 5d are the substrate processing unit 5a. , 5b.

  Hereinafter, the substrate processing units 5a, 5b, 5c, and 5d are collectively referred to as processing units. In the transfer area C, a substrate transfer robot CR is provided.

  An indexer ID for carrying in and out the substrate W is arranged on one end side of the processing areas A and B, and the indexer robot IR is provided inside the indexer ID. The carrier 1 that stores the substrate W is placed on the indexer ID.

  The indexer robot IR with the indexer ID moves in the direction of the arrow U, takes out the substrate W from the carrier 1 and passes it to the substrate transport robot CR, and conversely receives the substrate W subjected to a series of processing from the substrate transport robot CR. Return to carrier 1.

  The substrate transfer robot CR transfers the substrate W delivered from the indexer robot IR to the designated processing unit, or transfers the substrate W received from the processing unit to another processing unit or the indexer robot IR.

  In the present embodiment, after the chemical liquid processing is performed on the substrate W in any of the substrate processing units 5a to 5d, the substrate W is unloaded from the substrate processing units 5a to 5d by the substrate transfer robot CR, and the indexer robot IR is moved. Via the carrier 1.

  The control unit 4 includes a computer including a CPU (Central Processing Unit) and the like. The operation of each processing unit in the processing areas A and B, the operation of the substrate transfer robot CR in the transfer area C, and the operation of the indexer robot IR of the indexer ID. To control.

(2) Configuration of Substrate Processing Unit FIG. 2 is a diagram for explaining the configuration of the substrate processing units 5a to 5d of the substrate processing apparatus 100 according to the present embodiment.

  2 removes impurities such as organic substances adhering to the surface of the substrate W by chemical processing, and then performs rinsing processing and drying processing of the substrate W.

  As shown in FIG. 2, the substrate processing units 5 a to 5 d include a spin chuck 21 for holding the substrate W horizontally and rotating the substrate W around a vertical rotation axis passing through the center of the substrate W. The spin chuck 21 is fixed to the upper end of the rotation shaft 25 rotated by the chuck rotation drive mechanism 36.

  The substrate W rotates while being held horizontally by the spin chuck 21 when performing chemical treatment, rinsing treatment, and drying treatment.

  A motor 60 is provided outside the spin chuck 21. A rotation shaft 61 is connected to the motor 60. An arm 62 is connected to the rotation shaft 61 so as to extend in the horizontal direction, and a chemical solution processing nozzle 50 is provided at the tip of the arm 62. A discharge port for discharging a chemical solution is formed at the tip of the chemical solution processing nozzle 50.

  The rotation shaft 61 is rotated by the motor 60 and the arm 62 is rotated, so that the chemical solution processing nozzle 50 moves above the substrate W held by the spin chuck 21.

  A chemical treatment supply pipe 63 is provided so as to pass through the motor 60, the rotation shaft 61 and the arm 62. The chemical treatment supply pipe 63 is connected to the fluid box portions 2a to 2d of FIG.

  The chemical solution (BHF) is supplied from the fluid box portions 2a to 2d to the chemical solution processing nozzles 50 of the substrate processing portions 5a to 5d through the chemical solution supply pipe 63. Thereby, the chemical solution can be supplied to the surface of the substrate W. The chemical processing nozzle 50 used in the present embodiment is made of a material having water repellency such as Teflon (registered trademark).

  A motor 71 is provided outside the spin chuck 21. A rotation shaft 72 is connected to the motor 71, and an arm 73 is connected to the rotation shaft 72. A rinse treatment nozzle 70 is provided at the tip of the arm 73. A discharge port for discharging the rinse liquid is formed at the tip of the rinse treatment nozzle 70.

  The rotation shaft 72 is rotated by the motor 71 and the arm 73 is rotated, so that the rinsing nozzle 70 moves above the substrate W held by the spin chuck 21.

  A rinse treatment supply pipe 74 is provided so as to pass through the motor 71, the rotation shaft 72, and the arm 73. The rinse treatment supply pipe 74 is connected to the fluid box portions 2a to 2d of FIG.

  The rinse liquid (pure water) is supplied from the fluid box sections 2a to 2d to the rinse processing nozzles 70 of the substrate processing sections 5a to 5d through the chemical processing supply pipe 74. Thereby, the rinse liquid can be supplied to the surface of the substrate W. The rinsing nozzle 70 used in the present embodiment is made of a material having water repellency such as Teflon (registered trademark).

  When supplying the chemical liquid onto the substrate W, the chemical liquid processing nozzle 50 moves to a processing position above the center of the substrate W, and when supplying the rinse liquid onto the substrate W, the chemical liquid processing nozzle 50 is It is retracted to the standby position outside the substrate W.

  Further, when supplying the chemical liquid onto the substrate W, the rinsing liquid processing nozzle 70 is retracted to the standby position outside the substrate W, and when supplying the rinsing liquid onto the substrate W, the rinsing liquid processing nozzle. 70 moves to the processing position above the center of the substrate W.

  The rotation shaft 25 of the spin chuck 21 is a hollow shaft. A processing liquid supply pipe 26 is inserted into the rotary shaft 25. The processing liquid supply pipe 26 is connected to the fluid box portions 2a to 2d in FIG. A chemical liquid or a rinsing liquid is supplied to the processing liquid supply pipe 26 from the fluid box portions 2a to 2d. The processing liquid supply pipe 26 extends to a position close to the lower surface of the substrate W held by the spin chuck 21.

  A lower nozzle 27 is provided at the tip of the processing liquid supply pipe 26 to discharge the chemical liquid or the rinse liquid vertically upward. The lower nozzle 27 faces the center of the back surface of the substrate W held by the spin chuck 21.

  The spin chuck 21 is accommodated in the processing cup 23. A cylindrical partition wall 33 is provided inside the processing cup 23. Further, a drainage space 31 for draining the processing liquid used for processing the substrate W is formed so as to surround the periphery of the spin chuck 21. Further, a recovery liquid space 32 for recovering the processing liquid used for processing the substrate W is formed between the processing cup 23 and the partition wall 33 so as to surround the drainage space 31.

  A drainage pipe 34 is connected to the drainage space 31 to guide the processing liquid to a drainage processing apparatus (not shown), and the processing liquid is supplied to the recovery processing apparatus (not shown) in the recovery liquid space 32. A collection pipe 35 for guiding is connected.

  A guard 24 for preventing the processing liquid from the substrate W from splashing outward is provided above the processing cup 23. The guard 24 has a rotationally symmetric shape with respect to the rotation shaft 25. On the inner surface of the upper end of the guard 24, a drainage guide groove 41 having a square cross section is formed in an annular shape.

  Further, a recovery liquid guide portion 42 having an inclined surface that is inclined outward and downward is formed on the inner surface of the lower end portion of the guard 24. A partition wall storage groove 43 for receiving the partition wall 33 of the processing cup 23 is formed in the vicinity of the upper end of the recovered liquid guide portion 42.

  The guard 24 is provided with a guard raising / lowering drive mechanism (not shown) constituted by a ball screw mechanism or the like. The guard raising / lowering drive mechanism includes a guard 24, a recovery position where the recovery liquid guide 42 is opposed to the outer peripheral end surface of the substrate W held by the spin chuck 21, and the substrate W where the drainage guide groove 41 is held by the spin chuck 21. The liquid is moved up and down with respect to the drainage position facing the outer peripheral end face. When the guard 24 is in the recovery position, the processing liquid splashed outward from the substrate W is guided to the recovery liquid space 32 by the recovery liquid guide part 42 and recovered through the recovery pipe 35. On the other hand, when the guard 24 is at the drainage position, the processing liquid splashed outward from the substrate W is guided to the drainage space 31 by the drainage guide groove 41 and drained through the drainage pipe 34. With the above configuration, the processing liquid is drained and collected.

  When the substrate W is loaded into and unloaded from the spin chuck 21, the guard lifting / lowering drive mechanism retracts the guard 24 further below the liquid discharge position, and the upper end 24 a of the guard 24 is the substrate formed by the spin chuck 21. It moves so that it may become a position lower than the holding height of W.

(3) Operation of Substrate Processing Unit Next, the operation of the substrate processing apparatus 100 of FIGS. 1 and 2 will be described. The operation of each component of the substrate processing apparatus 100 is controlled by the control unit 4 in FIG. Here, in the present embodiment, the processing of the substrate W by the substrate processing apparatus 100 is performed in units of lots including a predetermined number of substrates W. That is, the processing is continuously performed on one lot of substrates W under predetermined conditions. Thereafter, the next one lot of substrates W is continuously processed under the same or different conditions as the previous lot of substrates W.

  FIG. 3 is a flowchart showing the operation of the substrate processing units 5a to 5d in FIG.

  As shown in FIG. 3, when the substrate W is loaded, the guard 24 is lowered and the substrate transport robot CR places the substrate W on the spin chuck 21 (step S1). The substrate W placed on the spin chuck 21 is held by the spin chuck 21.

  Next, the guard 24 rises to the above-described collection position or waste liquid position, and the chemical solution processing nozzle 50 moves from the standby position to a processing position above the center of the substrate W. Thereafter, the rotating shaft 25 rotates, and the substrate W held by the spin chuck 21 rotates with this rotation (step S2).

  Thereafter, the chemical liquid is supplied onto the substrate W from the chemical liquid processing nozzle 50, and the chemical liquid is supplied to the back surface of the substrate W from the lower nozzle 27. Thereby, the chemical | medical solution process of the board | substrate W is performed (step S3). After completion of the chemical treatment of the substrate W, the chemical treatment nozzle 50 moves to a standby position outside the substrate W.

  Next, the rinse processing nozzle 70 moves to a processing position above the center of the substrate W. Next, the rinse liquid is supplied onto the substrate W from the rinse processing nozzle 70, and the rinse liquid is supplied to the back surface of the substrate W from the lower nozzle 27. Thereby, the rinse process of the board | substrate W is performed (step S4).

  Next, the supply of the rinsing liquid is stopped, and the rotational speed of the rotary shaft 25 is increased. For this reason, a large centrifugal force acts on the rinse liquid on the substrate W, and the rinse liquid is removed from the substrate W. Thereby, the drying process of the board | substrate W is performed (step S5).

  Next, the rinsing nozzle 70 is retracted to the standby position outside the substrate W, and the rotation of the rotary shaft 25 is stopped. Thereafter, the guard 24 is lowered and the substrate transport robot CR of FIG. 1 carries the substrate W out of the substrate processing units 5a to 5d (step S6).

  Thereafter, the control unit 4 determines whether or not the processing of one lot of substrates W has been completed (step S7).

  If the processing of one lot of substrates W has not been completed, the process returns to step S1 and the processes of steps S1 to S7 are repeated.

  When the processing of one lot of substrates W is completed, cleaning processing of a chemical solution processing nozzle 50 described later is performed (step S8).

  Thereafter, the control unit 4 determines whether or not the processing of the substrates W of all lots has been completed (step S9). If processing of all the lots of substrates W has not been completed, the process returns to step S1 to process the substrate W of the next lot. If the processing of all lots of substrates W is completed in step S9, the operation is terminated.

  Here, as described above, in the substrate processing units 5a to 5d, the chemical processing of the substrate W is performed using the chemical processing nozzle 50. In this case, after the chemical solution treatment of the substrate W, the chemical solution adhering to the tip portion and the inside of the chemical solution treatment nozzle 50 is dried, so that a deposit of the chemical solution is generated in the chemical solution treatment nozzle 50.

  In particular, in the present embodiment, BHF containing ammonium fluoride, which is a neutralized salt of acid and alkali, is used as the chemical solution, so that a precipitate made of the neutralized salt is easily generated. This deposit falls on the substrate W from the chemical processing nozzle 50 after the chemical processing and the rinsing processing, or changes the supply conditions of the chemical supplied from the chemical processing nozzle 50 to the substrate W. It causes processing failure.

(4) Cleaning Process for Chemical Solution Processing Nozzle FIG. 4 is a flowchart showing the cleaning process for the chemical solution processing nozzle 50 shown in Step S7 of FIG. FIG. 5 is a diagram for explaining the cleaning process of the chemical liquid processing nozzle 50 shown in step S7 of FIG.

  First, the guard 24 moves to the above-described waste liquid position (step S11). Next, the chemical solution processing nozzle 50 moves from the standby position to the processing position (step S12). As a result, the discharge port of the chemical liquid processing nozzle 50 faces the discharge port of the lower nozzle 27.

  Next, the nozzle cleaning liquid (the same pure water as the rinse liquid) is discharged from the lower nozzle 27 toward the tip of the chemical liquid processing nozzle 50 (step S13). As shown in FIG. 5, the nozzle cleaning liquid discharged from the lower nozzle 27 is supplied to the chemical liquid processing nozzle 50 positioned vertically upward along a straight track. Thereby, the deposit of the chemical liquid adhering to the tip of the chemical liquid processing nozzle 50 is washed away by the nozzle cleaning liquid. Further, the nozzle cleaning liquid supplied from the lower nozzle 27 flows into the inside from the discharge outlet at the tip of the chemical liquid processing nozzle 50. Thereby, the deposit of the chemical liquid adhering to the inside of the discharge port at the tip of the chemical liquid processing nozzle 50 and the inside of the chemical liquid processing nozzle 50 is washed away by the nozzle cleaning liquid.

  After a predetermined time has elapsed, the discharge of the nozzle cleaning liquid from the lower nozzle 27 is stopped, and the chemical liquid processing nozzle 50 moves to the standby position (step S14).

  In this way, by discharging the nozzle cleaning liquid from the lower nozzle 27 to the tip of the chemical processing nozzle 50, not only the tip of the chemical processing nozzle 50 but also the inside of the discharge port at the tip of the chemical processing nozzle 50, and The inside of the chemical treatment nozzle 50 can also be cleaned.

  During the cleaning process of the chemical liquid processing nozzle 50, it is preferable to swing the chemical liquid processing nozzle 50 in the horizontal direction relative to the lower nozzle 27 by swinging the arm 73 in a horizontal plane. As a result, the nozzle cleaning liquid is uniformly supplied over a wide area of the tip of the chemical liquid processing nozzle 50, and the nozzle inside the discharge port at the tip of the chemical liquid processing nozzle 50 and the details inside the chemical liquid processing nozzle 50 are also provided. The cleaning liquid enters. As a result, the cleaning effect is further improved.

  In the present embodiment, since a material having water repellency is used as the material for the chemical liquid processing nozzle 50, the chemical liquid processing nozzle 50 is not dried after the chemical liquid processing nozzle 50 is cleaned. However, when the water repellency of the chemical liquid processing nozzle 50 is not sufficient, a drying mechanism for drying the chemical liquid processing nozzle 50 after the cleaning process may be provided. As the drying mechanism, for example, a mechanism that blows a dry gas such as an inert gas or air toward the tip of the chemical liquid processing nozzle 50 may be employed.

  In the present embodiment, the case where the substrate processing units 5a to 5d perform the chemical processing of the substrate W using the chemical processing nozzle 50 and the rinsing processing of the substrate W using the rinsing processing nozzle 70 will be described. However, when processing the substrate W using a plurality of types of chemical solutions, the chemical processing of the substrate W may be performed using the chemical processing nozzle 50 and the rinsing processing nozzle 70.

  In this case, the cleaning process of the rinsing process nozzle 70 is performed by the nozzle cleaning liquid from the lower nozzle 27 as in the cleaning process of the chemical process nozzle 50.

(5) Correspondence between Each Component of Claim and Each Part of Embodiment In the above embodiment, the chemical processing nozzle 50 corresponds to a processing liquid nozzle, and the discharge port of the chemical processing nozzle 50 supplies a processing liquid. Corresponding to the mouth, the lower nozzle 27 corresponds to the cleaning liquid nozzle, the chemical liquid and the rinsing liquid correspond to the processing liquid, the spin chuck 21 corresponds to the substrate holding means, the motor 60, the rotating shaft 61 and the arm 62 are the driving means. It corresponds to.

(6) Other embodiments (6-1)
In the embodiment described above, the cleaning process of the chemical liquid processing nozzle 50 is performed at the processing position above the spin chuck 21, but the cleaning process of the chemical liquid processing nozzle 50 may be performed at the standby position shown in FIG.

  FIG. 6 is a diagram for explaining the cleaning process of the chemical liquid processing nozzle 50 at the standby position.

  As shown in FIG. 6, a standby pot 65 is provided at a standby position outside the spin chuck 21. The standby pot 65 is connected to a drainage recovery pipe 65a for guiding the processing liquid to a drainage processing device (not shown) or a recovery processing device (not shown).

  When chemical processing of the substrate W is not performed by the chemical processing nozzle 50, the chemical processing nozzle 50 stands by above the standby pot 65. A cleaning nozzle 650 that discharges the nozzle cleaning liquid vertically upward is provided at the bottom of the standby pod 51. The cleaning nozzle 650 has a discharge port for discharging a nozzle cleaning liquid.

  Cleaning nozzle 650 is arranged vertically below chemical solution processing nozzle 50 at the standby position. As a result, the discharge port of the cleaning nozzle 650 faces the discharge port of the chemical liquid processing nozzle 50. The cleaning nozzle 650 is connected to the fluid box portions 2a to 2d via the nozzle cleaning liquid supply pipe 65b. Nozzle cleaning liquid is supplied to the cleaning nozzle 650 from the fluid box portions 2a to 2d through the nozzle cleaning liquid supply pipe 65b.

  During the cleaning process of the chemical liquid processing nozzle 50, the nozzle cleaning liquid is discharged from the cleaning nozzle 650 toward the tip of the chemical liquid processing nozzle 50 at the standby position.

  Accordingly, as in the case of using the lower nozzle 27 in FIGS. 2 and 5, the inside of the discharge port at the tip of the chemical liquid processing nozzle 50 and the inside of the chemical liquid processing nozzle 50 can be cleaned.

(6-2)
In the above embodiment, the chemical processing nozzle 50 is fixed to the arm 62, but the chemical processing nozzle 50 may be provided on the arm 62 so as to be swingable in a vertical plane like a pendulum. In this case, the nozzle cleaning liquid is uniformly supplied over a wide area of the tip of the chemical liquid processing nozzle 50, and the nozzle inside the discharge port at the tip of the chemical liquid processing nozzle 50 and the details inside the chemical liquid processing nozzle 50 are also shown. The cleaning liquid enters. As a result, the cleaning effect is further improved.

(6-3)
In the above embodiment, the discharge direction of the rinsing liquid or nozzle cleaning liquid of the lower nozzle 27 is fixed, but the lower nozzle 27 is provided so as to be swingable in a horizontal plane or a vertical plane in the vicinity of the center of the spin chuck 21. May be. Further, although the discharge direction of the cleaning nozzle 650 is also fixed, the cleaning nozzle 650 of FIG. 6 may be provided so as to be able to swing in a horizontal plane or a vertical plane. In this case, the nozzle cleaning liquid is uniformly supplied over a wide area of the tip of the chemical liquid processing nozzle 50, and the nozzle inside the discharge port at the tip of the chemical liquid processing nozzle 50 and the details inside the chemical liquid processing nozzle 50 are also shown. The cleaning liquid enters. As a result, the cleaning effect is further improved. In the above embodiment, the discharge directions of the lower nozzle 27 and the cleaning nozzle 650 are both vertically upward, but the present invention is not limited to this, and the discharge directions of the lower nozzle 27 and the cleaning nozzle 650 are vertical. It may be an inclined direction.

(6-4)
In the above embodiment, pure water is used as a rinsing liquid for rinsing the substrate W and a nozzle cleaning liquid for cleaning the chemical liquid processing nozzle 50. However, the present invention is not limited to this, and carbonated water, hydrogen water, Electrolytic ionized water, HFE (hydrofluoroether) or the like may be used. The rinse liquid and the nozzle cleaning liquid are not necessarily the same, and may be different liquids of pure water, carbonated water, hydrogen water, electrolytic ion water, and HFE (hydrofluoroether).

(6-5)
In the above embodiment, the cleaning of the chemical solution processing nozzle 50 by the lower nozzle 27 or the cleaning nozzle 650 is performed every time one lot of substrates W is processed, but the chemical processing nozzle by the lower nozzle 27 or the cleaning nozzle 650 is used. The timing of the cleaning process 50 is not limited to this. The cleaning process of the chemical processing nozzle 50 by the lower nozzle 27 can be performed at an arbitrary timing when the substrate W does not exist on the spin chuck 21. Further, the cleaning process of the chemical liquid processing nozzle 50 by the cleaning nozzle 650 can be performed at an arbitrary timing when the chemical liquid processing nozzle 50 exists at the standby position. For example, specifically, the cleaning process of the chemical liquid processing nozzle 50 may be performed every time a series of processes for one substrate W is completed.

(6-6)
The rinsing nozzle 70 can be cleaned by the lower nozzle 27 or the cleaning nozzle 650.

(6-7)
If the substrate W can be carried in and out, the chemical solution processing nozzle 50 may be fixedly provided above the spin chuck 21.

(6-8)
In the above-described embodiment, the configuration in which the lower nozzle 27 or the cleaning nozzle 650 is provided in the substrate processing units 5a to 5d that perform the cleaning process on the substrate W has been described. However, the present invention is not limited to this. The lower nozzle 27 or the cleaning nozzle 650 may be provided in another processing unit. Also in this case, the precipitate generated in the nozzle can be effectively removed.

  Examples of the treatment using the chemical solution include a development treatment of the substrate W, a resist coating treatment, a resist peeling treatment, and a polymer removal treatment. When developing the substrate W, an alkaline solution such as TMAH (tetramethylammonium hydroxide) or an acidic solution such as butyl acetate is used as the chemical solution. At the time of resist coating treatment, a resist solution (photosensitive agent) is used as a chemical solution. In the resist stripping process, for example, sulfuric acid / hydrogen peroxide or ozone water is used as a chemical solution. During the polymer removal treatment, for example, an ammonium fluoride-based solution containing ammonium fluoride and phosphoric acid is used as the chemical solution.

  The present invention can be used for processing various substrates.

1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. It is a figure for demonstrating the structure of the substrate processing part of the substrate processing apparatus which concerns on this Embodiment. It is a flowchart which shows operation | movement of the substrate processing part of FIG. It is a flowchart which shows the detail of the washing | cleaning process of the nozzle for chemical | medical solution processing of FIG. It is a figure for demonstrating the washing | cleaning process of the nozzle for chemical | medical solution processing of FIG. It is a figure for demonstrating the washing | cleaning process of the nozzle for chemical | medical solution processing in a standby position.

Explanation of symbols

DESCRIPTION OF SYMBOLS 4 Control part 5a-5d Substrate processing part 21 Spin chuck 27 Lower nozzle 60,71 Motor 61,72 Rotating shaft 62,73 Arm 100 Substrate processing apparatus

Claims (8)

A treatment liquid nozzle having a treatment liquid supply port for supplying the treatment liquid onto the substrate;
A substrate processing apparatus comprising: a cleaning liquid nozzle that discharges a nozzle cleaning liquid from below toward a processing liquid supply port of the processing liquid nozzle. A substrate holding means for holding the substrate;
The cleaning liquid nozzle is provided below the position where the substrate is to be held by the substrate holding means, and the processing liquid nozzle is positioned above the cleaning liquid nozzle in a state where the substrate is not held by the substrate holding means. The substrate processing apparatus according to claim 1, wherein the nozzle cleaning liquid is discharged toward the processing liquid supply port. 3. The substrate processing apparatus according to claim 2, further comprising driving means for moving the processing liquid nozzle between an upper position of the substrate held by the substrate holding hand and a standby position outside the substrate. The substrate holding means rotates the substrate around a vertical rotation axis,
4. The substrate processing apparatus according to claim 2, wherein the cleaning liquid discharge port of the cleaning liquid nozzle is located on the rotation shaft. 5. The cleaning liquid nozzle further discharges a processing liquid for processing the substrate toward the back surface of the substrate in a state where the substrate is held by the substrate holding unit. 2. The substrate processing apparatus according to 1. Substrate holding means for holding the substrate;
Drive means for moving the processing liquid nozzle between an upper position of the substrate held by the substrate holding means and a standby position outside the substrate held by the substrate holding means;
The substrate processing apparatus according to claim 1, wherein the cleaning liquid nozzle discharges a nozzle cleaning liquid toward a processing liquid supply port of the processing liquid nozzle in a state where the processing liquid nozzle is in the standby position. The at least one of the processing liquid nozzle and the cleaning liquid nozzle swings relative to the other when the nozzle cleaning liquid is discharged to the processing liquid nozzle by the cleaning liquid nozzle. The substrate processing apparatus according to claim 6. A treatment liquid supply step of supplying a treatment liquid onto the substrate from the treatment liquid supply port of the treatment liquid nozzle;
A substrate processing method comprising: a nozzle cleaning liquid discharge step of discharging a nozzle cleaning liquid from below toward the processing liquid supply port of the processing liquid nozzle during a period in which the processing liquid supply step is not performed.

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