JP2007005392A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of collecting processing liquid used for processing a substrate to a high purity without causing a problem of particles. <P>SOLUTION: A fixed guard 9, an inner ascending/descending guard 10, a middle ascending/descending guard 11 and an outer ascending/descending guard 12 are arranged so that they surround a periphery of a spin chuck 1. A circular liquid storage groove 24 which is depressed downward is formed on an upper face of an upper end of the inner ascending/descending guard 10. An almost cylindrical close member 30 projected to the liquid storage groove 24 is formed at a lower face of an upper end of the middle ascending/descending guard 11. A lower end of the close member 30 advances to pure water stored in the liquid storage groove 24 in a state where the upper end of the inner ascending/descending guard 10 is brought close to the upper end of the middle ascending/descending guard 11. An upper end between the inner ascending/descending guard 10 and the middle ascending/descending guard 11 is closed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, and the like. .

In a manufacturing process of a semiconductor device or a liquid crystal display device, for example, a single-wafer type substrate processing apparatus that processes substrates one by one is used to perform processing using a processing liquid on the substrate. In this single wafer type substrate processing apparatus, there is a configuration in which a processing liquid after being used for processing a substrate is recovered, and the recovered processing liquid is reused for subsequent processing.
A substrate processing apparatus configured to reuse a processing liquid is a spin chuck that holds and rotates the substrate substantially horizontally, a nozzle for supplying the processing liquid to the substrate rotated by the spin chuck, and splashes from the substrate. And a cup for capturing and collecting or discarding the processing liquid.

  The cup has, for example, a plurality of coaxial cylindrical side walls whose central axis is the rotation axis of the substrate by the spin chuck. The upper end portions of the respective side walls are inclined so as to approach the center axis (rotation axis of the substrate) of each side wall upward, and are substantially parallel to each other with a space therebetween. Moreover, the upper end edge of each side wall is arrange | positioned on the same cylindrical surface which makes the center axis line of each side wall the center axis line, and the receiving port which receives the process liquid scattered from a board | substrate is formed between each upper end edge. The cup is coupled with a drive mechanism for integrally raising and lowering all the side walls, and by this raising and lowering, each receiving port can be individually opposed to the end face of the substrate held by the spin chuck. It is like that. Further, the space formed between the side walls communicates with a recovery drain for recovering the processing liquid or a waste drain for discarding the processing liquid.

With this configuration, the substrate is rotated by the spin chuck, and the processing liquid is supplied to the rotating substrate from the nozzle, thereby achieving processing using the processing liquid on the substrate. In addition, when supplying the processing liquid to the substrate, one of the inlets faces the end surface of the substrate, so that the processing liquid scattered from the peripheral edge of the substrate to the side is received at the inlet and passed through the recovery drain. Can be disposed of through recovery or waste drain.
JP 2004-153078 A

  However, since each receiving port is always open, the processing liquid splashing from the substrate is different from the receiving port facing the end surface of the substrate (the receiving port not facing the end surface of the substrate). ). When splashes of processing liquid enter a receiving port different from the receiving port facing the end surface of the substrate, when the receiving port is a receiving port for receiving a processing liquid (collected liquid) to be collected, Another type of processing liquid is mixed with the recovered liquid, which causes a problem that the purity of the recovered liquid is lowered.

  Therefore, a plurality of side walls are separated from each other, and each side wall can be moved up and down independently, a space is formed between the upper ends of the two side walls, and a receiving port facing the end surface of the substrate is formed. It is conceivable that the upper end portions of the side walls other than the two side walls are overlapped with the upper end portions of the side walls adjacent to each other, and the space between the upper end portions is closed. Thereby, while being able to receive the process liquid which splashes from a board | substrate at a receiving port, it can prevent that the splash of the process liquid approachs between the upper end parts of the side wall which mutually overlaps.

  However, when the upper end portion of the side wall and the upper end portion of the side wall adjacent to each other are closely closed, or when the upper end portions are opened to form a receiving port, the upper end portions of the side walls are rubbed with each other. In addition, there is a risk of generating particles that cause contamination of the substrate. If a small gap is left between the upper end portion of the side wall and the upper end portion of the side wall adjacent thereto, and they are overlapped, the problem of such particle generation can be avoided. As long as it is formed, it is impossible to completely prevent the treatment liquid splashing from the substrate from entering.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of recovering a processing liquid used for processing a substrate with high purity without causing a problem of particles.

  In order to achieve the above object, according to a first aspect of the present invention, in the substrate processing apparatus, the substrate (W) is held substantially horizontally, and the held substrate intersects the surface of the substrate with a substantially vertical axis of rotation. A substrate rotating means (1) for rotating around, a processing liquid supply means (2) for supplying a processing liquid to the substrate rotated by the substrate rotating means, and surrounding the substrate rotating means, and having an upper end The first guard (10, 11) formed so as to extend in a direction intersecting the rotation axis and the periphery of the substrate rotation means, and the upper ends (18, 20) in the direction intersecting the rotation axis A second guard (11, 12) that extends and is opposed to the upper end (16, 18) of the first guard from above; and at least one of the first guard and the second guard Lifted Elevating mechanism (21, 22, 23), an annular liquid storage groove (24, 31) formed to be recessed downward from the upper surface of the upper end portion of the first guard, and storing the liquid therein, and the second Formed in a substantially cylindrical shape projecting from the lower surface of the upper end of the guard toward the liquid storage groove, the upper end of the first guard and the upper end of the second guard are close to each other at a predetermined interval, The lower end portion includes a closing member (30, 37) that enters the liquid stored in the liquid storage groove and closes the upper end portion of the first guard and the upper end portion of the second guard. It is characterized by.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, at least one of the first guard and the second guard is moved up and down so that the upper end portion of the first guard and the upper end portion of the second guard are largely separated from each other, and the end surface of the substrate is between these upper end portions. A receiving port can be formed opposite to. In this state, if the processing liquid is supplied to the substrate while rotating the substrate by the substrate rotating means, the processing liquid scattered from the peripheral edge of the substrate can be received between the first guard and the second guard. And can be recovered through between the first guard and the second guard. In addition, when supplying a treatment liquid different in kind from the treatment liquid to be collected through the first guard and the second guard to the substrate, at least one of the first guard and the second guard is moved up and down, The upper end and the upper end of the second guard are brought close to each other with a relatively small predetermined interval, and the closing member is stored in the liquid storage groove between the upper end of the first guard and the upper end of the second guard. If the liquid is closed by contacting with the liquid, it is possible to prevent the processing liquid scattered from the substrate from entering between the first guard and the second guard. Therefore, it is possible to prevent the processing liquid collected through the space between the first guard and the second guard from being mixed with another type of processing liquid different from the processing liquid.

In addition, when the first guard and / or the second guard are raised and lowered, there is no contact between the upper end of the first guard and the upper end of the second guard, so there is no possibility of generating particles that cause contamination of the substrate.
Therefore, the processing liquid used for processing the substrate can be recovered with high purity without causing the problem of generation of particles that cause contamination of the substrate.

According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, further comprising liquid supply means (25, 32) for supplying a liquid to the liquid storage groove.
According to this configuration, the liquid can be supplied to the liquid storage groove.
A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, further comprising a drainage means (27, 34) for discharging the liquid stored in the liquid storage groove.

According to this configuration, the liquid can be discharged from the liquid storage groove.
When both the liquid supply means and the drainage means are provided, the liquid is apparently stored in the liquid storage groove by discharging the liquid from the liquid storage groove while supplying the liquid to the liquid storage groove. A state can be formed. In this case, even if the processing liquid scattered from the substrate is mixed into the liquid stored in the liquid storage groove, the liquid containing the processing liquid can be quickly discharged from the liquid storage groove. Therefore, the liquid containing the processing liquid can be prevented from staying in the liquid storage groove, and the problem of substrate contamination due to the vaporized liquid can be avoided.

  When both the liquid supply means and the drainage means are provided, a flow rate adjusting means (33) for adjusting the flow rate of the liquid supplied to the liquid storage groove by the liquid supply means is further provided. The flow rate of the liquid supplied to the liquid storage groove is preferably adjusted so that the water level of the liquid stored in the liquid storage groove is lower than the upper surface of the upper end portion of the first guard.

According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects, the annular shape is formed so as to be depressed downward from the upper surface of the upper end portion of the first guard and surrounds the periphery of the liquid storage groove. The drainage grooves (28, 35) are further included.
According to this configuration, even if the liquid overflows from the liquid storage groove, the overflowed liquid can be discharged into the drainage groove. Therefore, it is possible to prevent the liquid overflowing from the liquid storage groove from being mixed into the processing liquid recovered through the space between the first guard and the second guard, and to further improve the purity of the recovered processing liquid. Can do.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1, 2 and 3 are cross-sectional views schematically showing the configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus supplies a processing liquid to the surface of a silicon semiconductor wafer W (hereinafter simply referred to as “wafer W”), which is an example of a substrate, and performs processing with the processing liquid on the surface. It is a leaf type device. The substrate processing apparatus includes a spin chuck 1 for holding and rotating a wafer W substantially horizontally, a processing liquid nozzle 2 for supplying a processing liquid to the surface of the wafer W held by the spin chuck 1, and a wafer. And a receiving member 3 for receiving the processing liquid scattered from W.

  The spin chuck 1 is provided with a disc-shaped spin base 4 that is rotated around a substantially vertical axis C by a rotational driving force of a motor (not shown), and at a plurality of positions on the peripheral portion of the spin base 4 at substantially equal angular intervals. And a plurality of clamping members 5 for clamping the wafer W in a substantially horizontal posture. As a result, the spin chuck 1 rotates the spin base 4 with the wafer W held by the plurality of holding members 5, thereby rotating the wafer W together with the spin base 4 while maintaining a substantially horizontal posture. Can be rotated.

  The spin chuck 1 is not limited to such a sandwich type spin chuck. For example, the spin chuck 1 includes a suction base that vacuum-sucks the lower surface of the wafer W, and sucks the back surface of the wafer W to the wafer W. Is held in a substantially horizontal posture, and the suction base is rotated around a substantially vertical axis, whereby the wafer W can be rotated while maintaining a substantially horizontal posture (vacuum chuck). ) May be employed.

  The first chemical liquid, the second chemical liquid, and pure water as the processing liquid are selectively supplied to the processing liquid nozzle 2 via the first chemical liquid valve 6, the second chemical liquid valve 7, and the pure water valve 8, respectively. It has become. That is, when the first chemical liquid valve 6 is opened, the first chemical liquid from a first chemical liquid supply source (not shown) is supplied to the processing liquid nozzle 2, and when the second chemical liquid valve 7 is opened, the second chemical liquid supply is performed. When the second chemical liquid from the source (not shown) is supplied to the processing liquid nozzle 2 and the pure water valve 8 is opened, pure water from the pure water supply source (not shown) is supplied to the processing liquid nozzle 2. It has become so. The first chemical liquid, the second chemical liquid, and pure water supplied to the processing liquid nozzle 2 are discharged from the processing liquid nozzle 2 toward the central portion of the wafer W held on the spin chuck 1.

The receiving member 3 includes a fixed guard 9, an inner lifting guard 10, a middle lifting guard 11, and an outer lifting guard 12.
The fixed guard 9 is provided so as to surround the periphery of the spin chuck 1, and is formed in a substantially rotationally symmetric shape with respect to the rotation axis line (rotation axis line of the spin base 4) C of the wafer W by the spin chuck 1. More specifically, the fixed guard 9 extends from the upper end of the cylindrical portion 13 obliquely inward and upward (in the upward direction of the wafer W), with the rotation axis C of the wafer W as the central axis. And an inclined portion 14 (inclined so as to approach the rotation axis C). The fixed guard 9 is fixedly arranged with respect to the spin chuck 1, and the upper end of the inclined portion 14 is located below the spin base 4.

  The inner elevating guard 10 is provided so as to surround the periphery of the fixed guard 9, and is formed in a substantially rotationally symmetric shape with respect to the rotation axis C of the wafer W by the spin chuck 1. More specifically, the inner elevating guard 10 is formed in a cylindrical shape having the rotation axis C of the wafer W as the central axis, and a cylindrical portion 15 facing the cylindrical portion 13 of the fixed guard 9 from the outside, and this cylinder. An inclined portion 16 that extends obliquely upward from the upper end of the portion 15 and that is opposed to the inclined portion 14 of the fixed guard 9 from above is integrally provided. The upper end edge (tip end edge) of the cylindrical portion 15 is disposed on the same cylindrical surface as the upper end edge of the inclined portion 14 of the fixed guard 9.

  The middle lifting / lowering guard 11 is provided so as to surround the inner lifting / lowering guard 10, and is formed in a substantially rotationally symmetric shape with respect to the rotation axis C of the wafer W by the spin chuck 1. More specifically, the middle elevating guard 11 is formed in a cylindrical shape having the rotation axis C of the wafer W as a central axis, and a cylindrical portion 17 facing the cylindrical portion 15 of the inner elevating guard 10 from the outside. The cylindrical portion 17 is integrally provided with an inclined portion 18 that extends obliquely upward from the upper end and faces the inclined portion 16 of the inner elevating guard 10 from above. Further, the upper end edge of the cylindrical portion 17 is disposed on the same cylindrical surface as the upper end edge of the inclined portion 14 of the fixed guard 9.

  The outer elevating guard 12 is provided so as to surround the middle elevating guard 11 and is formed in a substantially rotationally symmetric shape with respect to the rotation axis C of the wafer W by the spin chuck 1. More specifically, the outer elevating guard 12 is formed in a cylindrical shape having the rotation axis C of the wafer W as the central axis, and a cylindrical portion 19 facing the cylindrical portion 17 of the middle elevating guard 11 from the outside, The cylindrical portion 19 is integrally provided with an inclined portion 20 that extends obliquely upward from the upper end and faces the inclined portion 18 of the middle elevating guard 11 from above. The upper end edge of the cylindrical portion 19 is disposed on the same cylindrical surface as the upper end edge of the inclined portion 14 of the fixed guard 9.

  A first elevating mechanism 21, a second elevating mechanism 22, and a third elevating mechanism 23 are coupled to the inner elevating guard 10, the intermediate elevating guard 11, and the outer elevating guard 12, respectively. The inner elevating guard 10 has a position where the inclined portion 16 is spaced apart from the inclined portion 14 of the fixed guard 9 by the first elevating mechanism 21, and the inclined portion 16 is inclined by the fixed guard 9. It is raised and lowered to a position close to the portion 14 with a relatively small predetermined interval. Further, the middle elevating guard 11 has a position where the inclined portion 18 is separated from the inclined portion 16 of the inner elevating guard 10 by a second elevating mechanism 22, and the inclined portion 18 is moved up and down. The guard 10 is moved up and down to a position adjacent to the inclined portion 16 with a relatively small predetermined interval. Further, the outer elevating guard 12 has a position where the inclined portion 20 is spaced apart from the inclined portion 18 of the middle elevating guard 11 by the third elevating mechanism 23 and the inclined portion 20 is moved up and down in the middle. The guard 11 is moved up and down to a position adjacent to the inclined portion 18 with a relatively small predetermined interval.

  An annular liquid storage groove 24 having a concave cross section that is recessed downward from the upper surface is formed at the upper end of the inclined portion 16 of the inner elevating guard 10. A pure water supply path 25 formed inside the inner elevating guard 10 is connected to the bottom surface of the liquid storage groove 24. Pure water from a pure water supply source is adjusted to a constant flow rate by a flow rate adjusting valve 26 and supplied to the pure water supply channel 25. In addition, on the bottom surface of the liquid storage groove 24, a drainage channel 27 formed inside the inner elevating guard 10 is symmetric with respect to the connection position of the pure water supply channel 25 to the liquid storage channel 24 with respect to the rotation axis C of the wafer W, for example. It is connected to the position where Accordingly, a definite amount of pure water flows from the pure water supply path 25 into the liquid storage groove 24, and the pure water is discharged from the drainage path 27 through the liquid storage groove 24. As a result, the liquid storage groove 24 is apparently in a state where pure water is stored. The flow rate adjusting valve 26 is adjusted so that the level of pure water stored in the liquid storage groove 24 is kept at a constant level lower than the upper surface of the inclined portion 16.

Further, an annular drainage groove 28 having a concave cross section that is recessed downward from the upper surface thereof is formed in the inclined portion 16 of the inner elevating guard 10. The drainage groove 28 is provided so as to surround the periphery of the liquid storage groove 24. A branch drainage channel 29 branched from the drainage channel 27 is connected to the bottom surface of the drainage groove 28.
In addition, a substantially cylindrical closing member 30 that protrudes from the lower surface toward the liquid storage groove 24 is integrally formed at the upper end portion of the inclined portion 18 of the middle elevating guard 11. As shown in FIG. 2, the lower end portion of the closing member 30 is detached from the liquid storage groove 24 in a state where the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 are largely separated from each other. Thus, the space between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 is opened. On the other hand, as shown in FIGS. 1 and 3, the lower end portion of the inner lift guard 10 is stored in the liquid storage groove 24 with the inclined portion 16 of the inner lift guard 10 and the inclined portion 18 of the middle lift guard 11 in proximity to each other. It enters underwater and closes between the inclined part 16 of the inner elevating guard 10 and the inclined part 18 of the middle elevating guard 11.

  Further, an annular liquid storage groove 31 having a concave cross section that is recessed downward from the upper surface is formed at the upper end of the inclined portion 18 of the middle elevating guard 11. A pure water supply path 32 formed inside the middle elevating guard 11 is connected to the bottom surface of the liquid storage groove 31. The pure water supply path 32 is supplied with pure water from a pure water supply source, adjusted to a constant flow rate by a flow rate adjusting valve 33. Further, on the bottom surface of the liquid storage groove 31, a drainage passage 34 formed inside the middle elevating guard 11 is symmetric with respect to the connection position of the pure water supply path 32 to the liquid storage groove 31 with respect to the rotation axis C of the wafer W, for example. It is connected to the position where Thereby, a definite amount of pure water flows into the liquid storage groove 31 from the pure water supply path 32, and the pure water is discharged from the drainage path 34 through the liquid storage groove 31. Thereby, a definite amount of pure water flows into the liquid storage groove 31 from the pure water supply path 32, and the pure water is discharged from the drainage path 34 through the liquid storage groove 31. As a result, the liquid storage groove 31 apparently stores pure water. The flow rate adjustment valve 33 is adjusted so that the level of pure water stored in the liquid storage groove 31 is kept at a constant level lower than the upper surface of the inclined portion 18. 1 to 3, the valve B is provided in the middle of the downstream flow path where the drainage channel 27 and the drainage channel 34 merge. However, in the present embodiment, the valve B is always opened.

Further, an annular drainage groove 35 having a concave cross section that is recessed downward from the upper surface thereof is formed in the inclined portion 18 of the middle elevating guard 11. The drainage groove 35 is provided so as to surround the periphery of the liquid storage groove 31. A branch drainage channel 36 branched from the drainage channel 34 is connected to the bottom surface of the drainage groove 35.
In addition, a substantially cylindrical closure member 37 that protrudes from the lower surface toward the liquid storage groove 31 is integrally formed at the tip (upper end) of the inclined portion 20 of the outer elevating guard 12. As shown in FIG. 1, the lower end portion of the closing member 37 is detached from the liquid storage groove 31 in a state where the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 are largely separated from each other. Thus, the space between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 is opened. On the other hand, as shown in FIGS. 2 and 3, the lower end of the intermediate elevating guard 11 and the outer elevating guard 12 are close to each other and the lower end thereof is stored in the liquid storage groove 31. It enters underwater and closes between the inclined part 18 of the middle elevating guard 11 and the inclined part 20 of the outer elevating guard 12.

Before the wafer W is loaded into the spin chuck 1, the inner elevating guard 10, the middle elevating guard 11, and the outer elevating guard 12 are lowered to the lowest position so that the upper ends of the inclined portions 20 of the outer elevating guard 12 are all spun. It is located below the holding position of the wafer W by the chuck 1.
When the wafer W is loaded and the wafer W is held by the spin chuck 1, for example, as shown in FIG. 1, only the outer elevating guard 12 is raised, and the inclined portion 20 of the outer elevating guard 12 is in the middle. A receiving port facing the end surface of the wafer W is formed between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 so as to be largely separated above the inclined portion 18 of the elevating guard 11.

  Thereafter, the rotation of the wafer W (spin chuck 1) is started, and when the rotation speed of the wafer W reaches a predetermined speed, the first chemical liquid valve 6 is opened, and the central portion of the surface of the wafer W from the processing liquid nozzle 2 is opened. Is supplied with the first chemical. The first chemical supplied on the surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows on the surface of the wafer W, and scatters from the periphery of the wafer W to the side. As a result, the first chemical liquid spreads over the entire surface of the wafer W, and the surface of the wafer W is processed with the first chemical liquid.

  The first chemical liquid that is shaken off from the peripheral edge of the wafer W and scatters to the side enters a receiving port formed between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12. And it passes through between the middle raising / lowering guard 11 and the outer raising / lowering guard 12, and is collect | recovered by the 1st chemical | medical solution collection | recovery facility which is not shown in figure. At this time, the inclined portion 18 of the middle elevating guard 11 and the inclined portion 16 of the inner elevating guard 10 are close to each other, and the lower end portion of the closing member 30 enters the pure water stored in the liquid storage groove 24 and is closed. The member 30 closes between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11. This prevents the first chemical liquid scattered from the wafer W from entering between the inner elevating guard 10 and the middle elevating guard 11.

  When the first chemical solution is supplied to the wafer W over a predetermined time, the inner elevating guard 10 and the middle elevating guard 11 are raised, and the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 are moved. The inclined portion 18 of the middle elevating guard 11 approaches the inclined portion 20 of the outer elevating guard 12 while maintaining the close state. As a result, as shown in FIG. 3, the inclined portion 14 of the fixed guard 9 and the inclined portion 16 of the inner elevating guard 10 are separated from each other, and a receiving port facing the end surface of the wafer W is formed therebetween. At this time, since the gap between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 is closed by the closing member 30, even if the rotation of the wafer W and the supply of the first chemical liquid are continued. Further, it is possible to prevent the first chemical liquid scattered from the wafer W from entering between the inner elevating guard 10 and the middle elevating guard 11.

  Thereafter, the first chemical liquid valve 6 is closed, and the supply of the first chemical liquid from the processing liquid nozzle 2 to the wafer W is stopped. Then, the pure water valve 8 is opened, and pure water is supplied from the processing liquid nozzle 2 to the center of the surface of the wafer W. The pure water supplied on the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W. At this time, the first chemical solution adhering to the front and back surfaces of the wafer W is washed away. (Rinse treatment). Then, the pure water containing the first chemical liquid is shaken off from the periphery of the wafer W and scattered.

  Pure water (pure water containing the first chemical liquid) that is shaken off from the periphery of the wafer W and splashes to the side is formed between the inclined portion 14 of the fixed guard 9 and the inclined portion 16 of the inner elevating guard 10. Jump into the entrance. And it discharges | emits toward the waste liquid drain which is not shown in figure through between the fixed guard 9 and the inner raising / lowering guard 10. FIG. At this time, the space between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 is closed by the closing member 30, and the inclined portion 18 of the middle elevating guard 11 is inclined to the inclined portion 20 of the outer elevating guard 12. , The lower end portion of the closing member 37 enters the pure water stored in the liquid storage groove 31, and the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 are The space is closed by a closing member 37. This prevents pure water scattered from the wafer W from entering between the inner elevating guard 10 and the middle elevating guard 11 and between the middle elevating guard 11 and the outer elevating guard 12.

  When pure water is supplied to the wafer W over a predetermined time, the pure water valve 8 is closed and the supply of pure water from the processing liquid nozzle 2 to the wafer W is stopped. Then, the inner elevating guard 10, the middle elevating guard 11, and the outer elevating guard 12 are each lowered to the lowest position. Thereafter, the rotation speed of the wafer W (spin chuck 1) is increased to a predetermined high rotation speed, and a drying process in which pure water adhering to the surface of the wafer W is sprinkled off with a centrifugal force and dried is performed for a predetermined time. Is called. When the drying process is completed, the rotation of the wafer W by the spin chuck 1 is stopped, and the processed wafer W is unloaded from the spin chuck 1.

  Further, after the rinsing process after the processing with the first chemical solution, when the processing with the second chemical solution is performed on the wafer W, the supply of pure water from the processing solution nozzle 2 to the wafer W is stopped. Only the inner elevating guard 10 is lowered from the state in which the inner elevating guard 10, the middle elevating guard 11 and the outer elevating guard 12 are located at the uppermost position. As a result, as shown in FIG. 2, the inclined portion 16 of the inner elevating guard 10 is separated from the inclined portion 18 of the middle elevating guard 11, is adjacent to the inclined portion 14 of the fixed guard 9, and the inner elevating guard 10 is inclined. A receiving port facing the end surface of the wafer W is formed between the portion 16 and the inclined portion 18 of the middle elevating guard 11.

  Then, the second chemical liquid valve 7 is opened while the rotation of the wafer W is continued, and the second chemical liquid is supplied from the processing liquid nozzle 2 to the center of the surface of the wafer W. The second chemical supplied on the surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows on the surface of the wafer W, and scatters from the periphery of the wafer W to the side. As a result, the second chemical liquid spreads over the entire surface of the wafer W, and the surface of the wafer W is processed by the second chemical liquid.

  The second chemical liquid that is shaken off from the periphery of the wafer W and scatters to the side enters a receiving port formed between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11. And it passes through between the inner raising / lowering guard 10 and the middle raising / lowering guard 11, and is collect | recovered by the 2nd chemical | medical agent collection | recovery facility which is not shown in figure. At this time, since the gap between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 is closed by the closing member 37, the second chemical liquid scattered from the wafer W is moved up and down from the middle elevating guard 11. Entering between the guard 12 is prevented.

When the second chemical solution is supplied to the wafer W over a predetermined time, the inner elevating guard 10 is raised, and the inclined portion 16 of the inner elevating guard 10 approaches the inclined portion 18 of the middle elevating guard 11. As a result, as shown in FIG. 3, a receiving port facing the end surface of the wafer W is formed again between the inclined portion 14 of the fixed guard 9 and the inclined portion 16 of the inner elevating guard 10.
Thereafter, the second chemical liquid valve 7 is closed, and the supply of the second chemical liquid from the processing liquid nozzle 2 to the wafer W is stopped. Then, the pure water valve 8 is opened, and pure water is supplied from the processing liquid nozzle 2 to the center of the surface of the wafer W. The pure water supplied on the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W. At this time, the second chemical liquid adhering to the front and back surfaces of the wafer W is washed away. (Rinse treatment). In this rinsing process, as in the case of the rinsing process for washing away the first chemical solution, the pure water (pure water containing the second chemical solution) that is shaken off from the periphery of the wafer W and scattered laterally is It jumps into a receiving port formed between the inclined portion 14 and the inclined portion 16 of the inner elevating guard 10 and is discharged from the space between the fixed guard 9 and the inner elevating guard 10 to the waste liquid drain. At this time, the inclined portion 16 of the inner elevating guard 10 approaches the inclined portion 18 of the inner elevating guard 11, and the closing member 30 enters the pure water stored in the liquid storage groove 24. A closing member 30 closes the inclined portion 16 and the inclined portion 18 of the middle elevating guard 11. This prevents pure water scattered from the wafer W from entering between the inner elevating guard 10 and the middle elevating guard 11 and between the middle elevating guard 11 and the outer elevating guard 12.

  When pure water is supplied to the wafer W over a predetermined time, the pure water valve 8 is closed and the supply of pure water from the processing liquid nozzle 2 to the wafer W is stopped. Then, the inner elevating guard 10, the middle elevating guard 11, and the outer elevating guard 12 are each lowered to the lowest position. Thereafter, the rotation speed of the wafer W (spin chuck 1) is increased to a predetermined high rotation speed, and a drying process in which pure water adhering to the surface of the wafer W is sprinkled off with a centrifugal force and dried is performed for a predetermined time. Is called. When the drying process is completed, the rotation of the wafer W by the spin chuck 1 is stopped, and the processed wafer W is unloaded from the spin chuck 1.

  As described above, according to this embodiment, when the wafer W is processed with the first chemical solution, the inclined portion 20 of the outer elevating guard 12 is largely separated above the inclined portion 18 of the middle elevating guard 11, and the middle elevating guard 11 Between the inclined portion 18 and the inclined portion 20 of the outer elevating guard 12, a receiving port facing the end surface of the wafer W is formed. As a result, the first chemical liquid that is shaken off from the periphery of the wafer W and scatters to the side is ejected to the receiving port formed between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12. And can be recovered through the space between the middle elevating guard 11 and the outer elevating guard 12. At this time, the inclined portion 18 of the middle elevating guard 11 and the inclined portion 16 of the inner elevating guard 10 are close to each other, and the lower end portion of the closing member 30 enters the pure water stored in the liquid storage groove 24 and is closed. Since the member 30 closes between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11, the first chemical liquid scattered from the wafer W is formed between the inner elevating guard 10 and the middle elevating guard 11. It is possible to prevent entry between them. Therefore, the first chemical solution can be recovered with high purity.

  Further, when the wafer W is processed with the second chemical solution, the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11 are greatly separated, and the inclined portion 16 of the inner elevating guard 10 and the middle elevating guard 11 are separated. A receiving port facing the end surface of the wafer W is formed between the inclined portion 18 and the inclined portion 18. As a result, the second chemical liquid that is shaken off from the periphery of the wafer W and splashes to the side is splashed to the receiving port formed between the inclined portion 16 of the inner elevating guard 10 and the inclined portion 18 of the middle elevating guard 11. And can be recovered through the space between the inner elevating guard 10 and the middle elevating guard 11. At this time, the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12 are close to each other, and the lower end portion of the closing member 37 enters the pure water stored in the liquid storage groove 31 and is closed. Since the member 37 closes between the inclined portion 18 of the middle elevating guard 11 and the inclined portion 20 of the outer elevating guard 12, the second chemical liquid scattered from the wafer W is formed between the middle elevating guard 11 and the outer elevating guard 12. It is possible to prevent entry between them. Therefore, the second chemical solution can be recovered with high purity.

In addition, since the fixed guard 9, the inner elevating guard 10, the middle elevating guard 11, and the outer elevating guard 12 do not contact each other, there is no possibility of generating particles that cause contamination of the wafer W.
Therefore, the first chemical solution and the second chemical solution used for processing the wafer W can be recovered with high purity without causing the problem of generation of particles that cause contamination of the wafer W.

  In addition, since the drainage groove 35 is formed in the inclined portion 18 of the middle elevating guard 11 so as to surround the liquid storage groove 31, the liquid storage groove 31 overflows even if pure water overflows. Pure water can flow into the drainage groove 35 and be discharged from the drainage groove 35 through the branch drainage channel 36. Therefore, it is possible to prevent the pure water overflowing from the liquid storage groove 31 from being mixed into the first chemical liquid collected through the space between the middle elevating guard 11 and the outer elevating guard 12, and the collected first chemical liquid. Purity can be further improved.

  Similarly, since the drainage groove 28 is formed in the inclined portion 16 of the inner elevating guard 10 so as to surround the periphery of the liquid storage groove 24, even if pure water overflows from the liquid storage groove 24, it overflows. The pure water can flow into the drainage groove 28 and be discharged from the drainage groove 28 through the branch drainage channel 29. Therefore, it is possible to prevent the pure water overflowing from the liquid storage groove 24 from being mixed into the second chemical liquid collected through the space between the inner elevating guard 10 and the middle elevating guard 11, and the recovered second chemical liquid. Purity can be further improved.

  Although one embodiment of the present invention has been described above, the present invention can be implemented in other forms. For example, in the above embodiment, the first chemical liquid, the second chemical liquid, and pure water are selectively supplied from the processing liquid nozzle 2 to the surface of the wafer W, but the surface of the wafer W is disposed above the spin chuck 1. Provided with a nozzle for supplying a first chemical solution, a nozzle for supplying a second chemical solution to the surface of the wafer W, and a nozzle for supplying pure water to the surface of the wafer W. It is also possible to select and supply the first chemical solution, the second chemical solution, and pure water to the surface of the wafer W.

In the above embodiment, the fixed guard 9 is fixedly arranged with respect to the spin chuck 1. However, the fixed guard 9 is coupled to an elevating mechanism including a ball screw mechanism and the like. A configuration that moves up and down with respect to the spin chuck 1 may be employed.
Furthermore, it is preferable that the lower end portions of the closing members 30 and 37 are formed in a tapered cross section. If the lower end portions of the closing members 30 and 37 are tapered in cross section, the closing members 30 and 37 are removed when the lower end portions of the closing members 30 and 37 come out of the pure water stored in the liquid storage grooves 24 and 31, respectively. The pure water adhering to the water can flow down quickly, and it is possible to prevent the pure water from adhering to the closing members 30 and 37 from being left for a long time.

The liquid stored in the liquid storage grooves 24 and 31 is not limited to pure water. For example, the second chemical liquid is stored in the liquid storage groove 24 and the first chemical liquid is stored in the liquid storage groove 31. Also good.
Further, in the above embodiment, the pure water is discharged from the drainage channels 27 and 34 while flowing a definite amount of pure water from the pure water supply channels 25 and 32 into the liquid storage grooves 24 and 31, thereby allowing the liquid to flow. A state in which a predetermined amount of pure water is stored in the storage grooves 24 and 31 is maintained, so that the liquid in the liquid storage grooves 24 and 31 is constantly replaced. However, the present invention is not limited to this, and the replacement of the liquid in the liquid storage grooves 24 and 31 may be performed intermittently at a timing as necessary. Specifically, for example, first, the valve B provided in the middle of the downstream flow path of the drainage channels 27 and 34 is closed, and a predetermined amount is supplied in advance from the pure water supply channels 25 and 32 to the liquid storage grooves 24 and 31. In this state, substrate processing is started. Then, after the substrate processing is performed for a while, at a timing according to a predetermined time condition (for example, every predetermined processing elapsed time, every predetermined number of processed substrates, every end of a predetermined substrate processing lot, etc.) After opening the valve B provided in the middle of the drainage channels 27 and 34 and discharging the liquid in the liquid storage grooves 24 and 31, the valve B is closed again and the pure water supply channels 25 and 32 are connected. The liquid in the liquid storage grooves 24 and 31 may be replaced by supplying a predetermined amount of new pure water to the liquid storage grooves 24 and 31. In this way, the consumption of pure water supplied to the liquid storage grooves 24 and 31 can be greatly reduced.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, and shows positions of an inner elevating guard, an intermediate elevating guard, and an outer elevating guard when a wafer is processed with a first chemical solution. It is an illustration sectional view of a substrate processing device concerning one embodiment of this invention, and shows a position of an inner raising guard, a middle raising guard, and an outer raising guard at the time of processing with the 2nd chemicals to a wafer. 1 is a schematic sectional view of a substrate processing apparatus according to an embodiment of the present invention, and shows positions of an inner elevating guard, an intermediate elevating guard, and an outer elevating guard when a wafer is treated with pure water.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Process liquid nozzle 10 Inner raising / lowering guard 11 Middle raising / lowering guard 12 Outer raising / lowering guard 16 Inclination part 18 Inclination part 20 Inclination part 21 1st raising / lowering mechanism 22 2nd raising / lowering mechanism 23 3rd raising / lowering mechanism 24 Liquid storage groove 25 Pure water Supply path 26 Flow rate adjustment valve 27 Drainage path 28 Drainage groove 30 Closing member 31 Liquid storage groove 32 Pure water supply path 33 Flow rate adjustment valve 34 Drainage path 35 Drainage groove 37 Closing member C Rotating axis W Wafer

Claims (4)

Substrate rotating means for holding the substrate substantially horizontally and rotating the held substrate about a substantially vertical rotation axis intersecting the surface of the substrate;
Treatment liquid supply means for supplying a treatment liquid to the substrate rotated by the substrate rotation means;
A first guard that surrounds the substrate rotating means and is formed so that an upper end portion extends in a direction intersecting the rotation axis;
A second guard that surrounds the substrate rotating means, has an upper end that extends in a direction intersecting the rotation axis, and is opposed to the upper end of the first guard from above;
An elevating mechanism for elevating and lowering at least one of the first guard and the second guard;
An annular liquid storage groove that is formed to be recessed downward from the upper surface of the upper end portion of the first guard, and stores liquid therein.
It is formed in a substantially cylindrical shape that protrudes from the lower surface of the upper end portion of the second guard toward the liquid storage groove, and the upper end portion of the first guard and the upper end portion of the second guard are close to each other with a predetermined gap therebetween. And a closing member that closes between the upper end portion of the first guard and the upper end portion of the second guard, the lower end portion entering the liquid stored in the liquid storage groove. A substrate processing apparatus.   The substrate processing apparatus according to claim 1, further comprising liquid supply means for supplying a liquid to the liquid storage groove.   The substrate processing apparatus according to claim 1, further comprising a drainage unit that discharges the liquid stored in the liquid storage groove.   The drainage groove according to any one of claims 1 to 3, further comprising an annular drainage groove formed to be recessed downward from an upper surface of the upper end portion of the first guard and surrounding the periphery of the liquid storage groove. Substrate processing equipment.

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