TW200919570A - Substrate treatment apparatus, substrate treatment method, and storage medium - Google Patents

Substrate treatment apparatus, substrate treatment method, and storage medium Download PDF

Info

Publication number
TW200919570A
TW200919570A TW097127760A TW97127760A TW200919570A TW 200919570 A TW200919570 A TW 200919570A TW 097127760 A TW097127760 A TW 097127760A TW 97127760 A TW97127760 A TW 97127760A TW 200919570 A TW200919570 A TW 200919570A
Authority
TW
Taiwan
Prior art keywords
liquid
substrate
cup
wafer
treatment
Prior art date
Application number
TW097127760A
Other languages
Chinese (zh)
Other versions
TWI367525B (en
Inventor
Hiromitsu Nanba
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007222135 priority Critical
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200919570A publication Critical patent/TW200919570A/en
Application granted granted Critical
Publication of TWI367525B publication Critical patent/TWI367525B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02079Cleaning for reclaiming
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

To provide a substrate treatment apparatus and substrate treatment method that enable the efficient recovery of chemicals without the need for a complex mechanism. A substrate treatment apparatus and substrate treatment method are disclosed wherein a wafer W is rotatably held by a substrate holding section and a drainage cup 51 is provided so as to surround the outer periphery of the wafer W, and after the wafer W has been chemically cleaned while under rotation, the substrate is subjected to a rinse treatment by supplying a rinsing fluid while the substrate continues to be rotated in the same manner, and the wafer W is then chemically treated while rotating the substrate. During this chemical treatment, under the control of a process controller 121, the drainage cup 51 is first chemically cleaned by supplying a chemical while rotating the wafer W at the same speed as the rinse treatment or faster, with the chemical used for this treatment being disposed of through a drainage tube 61, and the wafer rotation speed is then set to the rotation speed for the wafer chemical treatment, and chemical treatment of the wafer is conducted with a switching valve 111 switched to a recovery line 112 position so as to allow the discharged liquid to be recovered.

Description

ί \ 200919570 九、發明說明: 【發明所屬之技術領 本發明係關於對例:上 定液體處理之基板處_ 專基板進行如清洗處理之既 如此方法執行之程式之域理方法,以及記憶有用以使 【先前技術】 «璃基‘供'ijjm常=係被處理基板之半導體晶圓 持於旋轉爽i,知,將係基板之半導體晶圓固 洗處理。以如此種類轉^供給藥液以進行清 由旌艎其柘你溢V置I㊉係對日日圓中心供給處理液’藉 Γίίί ^ 液處理時快之速度精沖洗處理,即在以較藥 Άϊί接甩出基板外方之處理液或沖洗液以排除液體之排 液杯係包圍晶圓外側(例如專利文獻丨)。 ’、且 類,基板處理裝置中’雖係使用驗性藥液或酸性藥液 此销液相對較為昂貴,有人提議將其回收以循 ^用辰度降低之藥液,此專利文獻2中記載有切換使 數杯ϊΐ方法與在水洗處理錢祕理之最她秒内將藥液 卜出至排放線,其後切換至回收線以回收藥液之技術。’、 導致於專利文獻2之技術中,於前者裝置會大型化而 v致其受付複雜。且於後者有一問題點,即自確實進 之觀點而言細較酿處理時快之轉速沖洗,故係沖洗液之=水 200919570 :為洗掉純水需消鱗間而導致廢棄之藥液增 【專:開2002-3_66號公報 文獻2】日本特開平5-243202號公報 【發明内容】 基板處理方以不::二::巧:-種基板處理裴置及 且其目的亦在於收藥液。 程式之記憶媒體。 , 仃如此之基板處理方法之 解決課 特徵3決課題本發明第1觀點中提供—種基板處理裝置, 板-齊旋轉; 基板Ξ機構,包含用以儲存藥液之藥液槽,自此藥液槽對 機構’用以對基板供給沖洗液; 側,:棘,該基板固持部所固持之基板外 ::,自⑽㈣板飛散之藥液或沖洗液; 回收Ϊ 所承接之藥液或沖洗液並廢棄之; 槽;口收、,泉連接该排出管以將已進行排液之藥液回收至該藥液 液之=換=構’切換於以該回收線回收藥液及自該排出管廢棄藥 該藥液供給機構供給該藥液、以該沖洗液供 轉基板、以該切換機構切 200919570 處理後以理裝置’俾使翻沖洗液進行沖洗 速或在其=—卿㈣沖洗處理時相同之轉 給機構供給藥液以藉由曰’並藉由該藥液供 此時之藥液,盆後排液杯’並透過該排出管廢棄 處理時之轉速以進行旋轉基板之轉速絲板之藥液 線側以回收此時樂液處理’切換該切換機構至該回收 使其包寺=:=不,設於該排液杯内側,俾 中。 “軸雜或权妓魏流於該排液杯 由基基板處理方法,在設置成可包圍 :供給;:=== 始以與沖洗處理時相進行藥液處理時,一開 ,構旋轉基板-面供給藥液以“藥液JJi排二面藉由該旋 藥液處理,並回收此時體織處理之轉速以進行基板之 上述第2觀點中,該基板處理裝置宜 =液杯之内侧,俾使其包圍由該基板固杯’其設於 ,板固持部及基板-齊旋轉,承接基板板,與 同之轉逮或在細上之键―面旋轉 ^^財洗處理時相 伴隨旋轉杯之旋轉而產生之迴旋流促二藥液之;非:樂液時,藉由 10 200919570 電腦上動作,用以控處記g體,記憶有在 :時使電腦控制該基板處理裝置=列 荜液ίϋίΓ iff給藥液崎對基板進行處理之步賢及斜 且在以沖洗液進行沖洗處理後筚 =反複進仃, 始以與沖洗處理時相同之轉H 進,液處理時,-開 轉機構旋轉基板-則録筚‘ ^上^轉速,—面藉由該旋ί \ 200919570 IX. Description of the Invention: [Technical Fields of the Invention] The present invention relates to a case where the substrate of the liquid processing is performed, and the substrate is subjected to a cleaning method such as a cleaning method, and the memory is useful. In order to make the semiconductor wafer of the substrate to be processed, the semiconductor wafer of the substrate is held in a rotating state, and it is known that the semiconductor wafer of the substrate is subjected to a solid-washing process. In this type, the liquid is supplied to the liquid to be cleaned. The other is the V-I. The ten-line supply to the Japanese yen center is supplied with the treatment liquid. The speed is processed quickly, that is, it is treated with the drug. The processing liquid or the rinsing liquid outside the substrate is taken out to surround the wafer outside the liquid discharging cup (for example, Patent Document 丨). ', and, in the substrate processing apparatus, although the use of the test liquid or the acidic liquid is relatively expensive, it has been proposed to recycle it to reduce the use of the liquid, which is described in Patent Document 2 There is a technique of switching the method of counting the cups and the method of discharging the liquid to the discharge line in the second of the time of washing the money, and then switching to the recovery line to recover the liquid. In the technique of Patent Document 2, the former device is enlarged and v-paid. In the latter case, there is a problem, that is, from the point of view of the stipulation, the rinsing speed is faster than that of the brewing process, so the rinsing liquid = water 200919570: the washing liquid that needs to be washed out of the pure water causes the waste liquid to be discarded. [Patent No. 22-32-3] [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei No. 5-243202. SUMMARY OF THE INVENTION The substrate processing method is not:: two::: a substrate processing apparatus and the purpose thereof is to collect medicine liquid. Program memory media.解决 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板The liquid tank pair mechanism ' is used to supply the rinsing liquid to the substrate; the side, the thorn, the substrate held by the substrate holding portion:: the liquid medicine or the rinsing liquid scattered from the (10) (four) plate; the Ϊ liquid or the rinsing liquid The liquid is discarded; the tank is connected to the mouth, and the spring is connected to the discharge pipe to recover the liquid medicine that has been drained to the liquid liquid = the change of the structure is switched to recover the liquid liquid from the recovery line and discharge therefrom The waste liquid supply device supplies the liquid medicine, and the rinsing liquid is supplied to the transfer substrate, and the switching mechanism is cut and processed in 200919570, and the rinsing device is used to rinsing the rinsing liquid or rinsing it in the ??? At the same time, the same solution is supplied to the mechanism to supply the liquid medicine by using the liquid medicine to supply the liquid medicine at the time, and the water is rotated by the discharge tube to discard the rotation speed of the rotating substrate. The side of the liquid medicine line of the board is recycled at this time. Process' switches the switch means so as to recover the packet Temple =: = no, is provided inside the drain cup, to serve in. "Axis or weights flow in the liquid discharge cup by the base substrate processing method, in the case of being set to be able to surround: supply;: === - The surface treatment supply liquid is "the inside of the liquid cup by the treatment of the liquid medicine JJi on both sides by the spinning liquid and recovering the rotational speed of the weaving treatment at this time to perform the substrate."俾 俾 包围 由 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该Rotating the rotation of the cup to produce the swirling flow of the two liquids; non: when the liquid is used, by 10 200919570 computer action, to control the g body, the memory is: when the computer controls the substrate processing device = The liquid 处理 ϋ ϋ ϋ 液 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对 对Rotating the substrate by the rotation mechanism - recording the speed of the ^ ^ ^ ^, the surface by the rotation
藥液處理,並回收忒:之藥液處理轉速以進行基板之 發明之敔I 琶中ϋϋ’於可透過排岭自概杯时藥液之基板處理事 =’ ^財洗㈣核理後__液處辦,—開 i... 轉或在其以上之轉速,-面藉由該旋‘機構旋 Lii iiit回收此時藥液處理之際之藥液,故藥液清洗時 ίίπί 理時因此可減少廢棄之藥液,可在其後藥液處 【實施方式】 务明之最佳形能 以下參照附圖並詳細説明關於本發明之實施形態。在此顯示 關於本發明適用於清洗半導體晶圓(以下僅記載為晶圓)表面背 面之液體處理裝置之情形。 200919570 到而Ξ ^顯示依本發明—實_態之基板處理裝置概略構成之 °眷。2係其平面圖,圖3係顯示圖1之基板處理裝置排氣· 排液部之放大剖面圖。 〃 未圖不之液體處理系統中組裝有複數台此基板處理 100,其包含: 底板1 ; 晶圓固持部2’以可旋轉之方式固持係被處理基板之晶圓w ; 旋轉馬達3,旋轉此晶圓固持部2; 旋轉杯4,包圍由晶圓固持部2所固持之晶圓w而設 與晶圓固持部2—齊旋轉; 表面側液供給喷嘴5,對晶圓w表面供給處理液; 背面侧液供給喷嘴6,對晶圓w背面供給處理液;及 排氣·排液部7,設於旋轉杯4周緣部。 且設有殼體8以便包覆排氣•排液部7周圍及晶圓w上方。於殼 體8上!f設f"透過設於側部之導入口9a將來自液體處理系統風'又 扇•濾器•單元(FFU)之氣流加以導入之氣流導入部9,以便對 由晶圓固持部2所固持之晶圓w供給潔淨空氣之下降流。 晶圓固持部2包含: & 旋轉板11,設為水平之圓板狀;及 旋轉軸12,連接其背面中心部,為沿下方鉛直延伸之圓筒狀。 旋轉板11中心部形成有連通旋轉軸12内孔12a之圓形孔 11a。又,將包含背面側液供給喷嘴6之昇降構件13,以可於孔 12a及孔11a内昇降之方式設置。設置固持晶圓w外緣之固持構 件14於旋轉板11,如圖2所示,以3個等間隔配置此等者。此固 持構件14以使晶圓W自旋轉板u稍微浮起之狀態水 W。此固持構件Μ包含: 丁u讨日日圓 固持部14a ’可固持晶圓w端面; 裝卸部14b,自固持部14a朝旋轉板背面側中心方向延伸丨及 旋轉軸14c ’使固持部i4a在垂直面内轉動; 12 200919570 藉由未圖示之缸筒機構將裝卸部14b之 方,藉此轉動固持部14a至外側以解除晶圓 σ在上推向上 ',藉由未圖示之彈簧構件朝固持部14a固持固1。固持構件 方式可旋轉之 ,帶輪16。皮帶17亦掛設於安裝於H ^而^^帶17掛 軸U。 f及f輪16並猎由旋轉馬達3,能旋轉旋轉 在由噴嘴固持構件22所固持之狀熊下, 嘴5於噴嘴f 22a前端,通過設 臂:面側液供給喷 S水作為沖洗液,並透過設於其内以== 23 81 ^ ί嘴猎由虹筒機構等昇降機構82上下動 聯繫於流路83之」給噴嘴j之噴嘴孔5a ,中設有閥86、87。閥祕連接配管‘端酉^妾8酉己管咖。山配管 藥液槽89。閥87連接配管9〇,配管9另二·^一端連接 (DIW)之DIW供給源91。又而連接供給純水 91通過配管84a及流路83分 自樂液札89及卿供給源 5。又,藥液槽⑼連接補充筚及純水至表面液供給喷嘴 釋藥液之純水之純水供^^之樂液補充線96a及供給用以稀 沿縱 她中設有閥92、93,連接配 13 200919570 上述藥液槽89。閥93連接配管95,配營 DIW供給源91。又,可自藥 之另—端連接上述 桃^別供給驗及純水至背面i供給料6供給源%通過配管 ^梁液中可舉例而言有例如係酸藥液之稀盡納r ^ 樂液之氨過氧化氫水(sc])等,可供给 ^卿)、係驗 給2種以上藥液時分別設 以上藥液。供 昇降構们3上端部,且有支^曰H妾配^84a、84b即可。 圓支持台24表面具有用以域晶圓曰曰^持台24。晶 。又’透過連接構件26,背面側 ® W幵降,藉此裝載及卸載晶圓W。 ^以使曰曰 旋轉杯4包含: 延伸圓Ϊ狀遮蔽部31 ’自旋轉板11端部上方朝内侧傾斜並朝上方 =外側壁部32,自遮蔽部31外端部朝垂直下方延伸。 ^大3示’於外側壁部32與旋轉板U之間形成有 3將晶圓W與旋轉板11及旋轉杯4 -齊旋轉而飛 政之樂/夜或係沖洗液之純水自此間隙33導向下方。 晋+ΐϊ,部31與旋轉板11之間,與晶圓W高度幾乎相同之位 f5^;f 構件%。如圖4所示,在遮蔽部31與引導構件 开^ A弓¥構件35與旋轉板11之間,分別沿周向配置有用以 333理液或沖洗液通過之複數開口 36及37之複數間隔構件 11 由螺釘40螺合固定遮蔽部31、引導構件35、旋轉板 Π與此等者間之間隔構件38、39。 疋職 連巧设置引導構件35成其表面背面與晶圓w之表面背面大致上 Μ 藉由馬達3使晶圓固持部2及旋轉杯4與晶圓w—齊旋 2並自表面側液供給噴嘴5射日圓%表面中心供給處理液時,因 尚心力處理液在晶圓W表面擴散,自晶圓w周緣被甩出。將自 14 200919570 36 # ώ ^ ° 部2及旋㈣4與關w—齊旋 隨地使晶圓固持 圓W背面中心供給處理液時,因液供給喷嘴6對晶 自晶圓W周緣被甩出。將自此;理:二圓 ;::,;"32 ^ 、液,此^自晶®w表面及背面被甩掉之處理 而被f 圓固位置設械口部41,以便=== 包H = 3 7主要係為回收,從由旋轉板11與旋轉杯4所 ^圍之工間被排出之氣體及液體者,亦如圖3之放大圖所示,^斤 及環狀排液杯51 ’承接由旋轉杯4所排出之處理液或沖洗液; 設置=外周壁53,位於旋轉杯4外侧,接近外侧壁部Μ並垂直 内側壁54,自外周壁53下端部朝内側延伸。 及內侧壁54之内周垂直形成有内周壁54a。由此等外周璧53 液54戶斤限定之環狀空間,為收納自旋轉杯4所排出之處理 外^辟^液之内部56。且為防止處理液自排液杯51飛出,於 收1二3上知设有延伸至旋轉杯4上方部分之延伸部53a。於、 旋S ΐ巧應固持構件14外側之位置,具有自内側壁54延伸至 反底面附近,沿排液杯51之周向設置成環狀之分隔壁55。 15 200919570 到達對應二 有用以將處理液自副杯魏 :圖1所·示,於排液杯51内侧壁54之最外側部分, ί 排出液體之1處排液σ 6G,排液口⑽連接排出液體 S 61。又,排液管61中設有切換閥1U,切換閥m ==夜之樂液回收線112。切換閥i ^ 之排放管113之_換排液f 6卜 ,、係尾棄線 藉此ΪΪΐϋ内,晶圓W、旋轉板U及旋轉杯4成—體旋轉, 自疋轉杯4所排出並儲存之處理液或沖洗液之迴旋流, 之排液管61將其排出。僅以晶圓%之旋轉板11 ΐΐϊϊ 生此迴旋流’但藉由使排液杯51内之處理液或沖 洗液伴隧於旋轉杯4旋轉時因插入排液杯51内之外側壁部32一之 迴旋氣流,可形成較僅以晶圓w與旋轉板u 速度疋^更為高速之迴旋流,可提高自排液口 60排出液體之 排氣杯52包含: 外侧壁64,垂直於排液杯51外周壁53之外側部分 n65 ’垂直於固持構件14内側部分且其上端接^轉板 底壁66 ’設於底板1上;及 16 200919570 置 上側壁67,自外侧壁64朝上方彎曲並包覆旋轉杯*上方而設 之二導=5^主ΐΐί上側壁67與旋轉杯4遮蔽部31之間 ^衣狀導^口 68導从轉杯4内及其觸之氣 氣。且如圖i及圖3所示,於排氣杯52下部設有排氣=7力〇以^ 口 70連接排氣管71。於排氣管71下游侧設有未圖示之抽構, 魏。細犧ϋ ™處理液種 於係排液杯51之外側壁之外周壁S3與排氣杯52之外64 之,^有環狀之外侧環狀空間99a,且於排液杯 = ? 52底部,之排氣口 70夕卜側部分,設有沿周向形“爹、= =孔98之壞狀氣流調整構件97。又,外側環狀空間99 T ,排氣杯52導入至排氣,之氣流二 ,通過係環狀空間之外側環狀空間·,橫跨 =將耽k均一㈣下方’並設置形成有多數通氣孔卯之 ,構件97,赋予壓力雛亦即氣流阻力並分散氣流 可^ 與排氣口 70之距離變化,進行相對而言較均一之排氣。叮不隧 且於排液杯51内周壁54a與排氣杯52内側壁^ 之_陶有與排 =杯52之間之間隙77。又,由導人口 68所導人之 99a,^ 51 將此軋k自液收納部56通過内側環狀空間9%橫跨全 下方,通過間隙77自排氣口 70進行相對而言較均排%一等向 如此,自排液杯51排除液體與自排氣杯52 ^ 故可在舰與減分叙狀n下精μ。且即使 51漏出’由於排氣杯52包圍其關,故可迅速透過 其排出,可確實防止霧氣漏出至外部。 飞 將Treatment of the liquid medicine, and recovery of the 忒: the treatment speed of the liquid medicine to carry out the invention of the substrate 敔I 琶中ϋϋ' in the substrate treatment of the liquid medicine through the ridges of the ridges = ' ^财洗 (4) after the treatment _ _liquid office, - open i... Turn or above the speed, the surface is rotated by Lii iiit to recover the liquid at the time of treatment, so the liquid is cleaned Therefore, it is possible to reduce the waste chemical liquid, and it is possible to carry out the following embodiments. The embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, the case where the present invention is applied to a liquid processing apparatus for cleaning a surface of a semiconductor wafer (hereinafter referred to simply as a wafer) is shown. 200919570 到 Ξ ^ shows a schematic configuration of the substrate processing apparatus according to the present invention. 2 is a plan view, and FIG. 3 is an enlarged cross-sectional view showing the exhaust and drain portions of the substrate processing apparatus of Fig. 1. 〃 A liquid processing system not shown in the figure is assembled with a plurality of the substrate processing 100, comprising: a substrate 1; the wafer holding portion 2' rotatably holds the wafer w of the substrate to be processed; the rotating motor 3, rotating The wafer holding portion 2; the rotating cup 4 surrounds the wafer w held by the wafer holding portion 2 and rotates in alignment with the wafer holding portion 2; the surface side liquid supply nozzle 5 supplies the surface of the wafer w The back side liquid supply nozzle 6 supplies the processing liquid to the back surface of the wafer w; and the exhaust/drain portion 7 is provided on the peripheral edge portion of the rotating cup 4. A housing 8 is provided to cover the periphery of the exhaust/drain portion 7 and above the wafer w. On the shell 8! f is set to f" the airflow introduction portion 9 from the liquid processing system wind's fan filter unit (FFU) is introduced through the inlet port 9a provided at the side to be held by the wafer holding portion 2 The wafer w supplies a downflow of clean air. The wafer holding portion 2 includes: & the rotating plate 11 and a horizontal disk shape; and the rotating shaft 12 is connected to the center portion of the back surface and has a cylindrical shape extending vertically downward. A circular hole 11a that communicates with the inner hole 12a of the rotary shaft 12 is formed at the center portion of the rotary plate 11. Further, the elevating member 13 including the back side liquid supply nozzle 6 is provided so as to be movable up and down in the hole 12a and the hole 11a. The holding member 14 holding the outer edge of the wafer w is disposed on the rotary plate 11, as shown in Fig. 2, and arranged at three equal intervals. This holding member 14 is water W in a state where the wafer W is slightly floated from the rotating plate u. The holding member Μ includes: a holding surface of the wafer holding portion 14a' that can hold the end surface of the wafer w; and a loading and unloading portion 14b extending from the holding portion 14a toward the center of the back side of the rotating plate and the rotating shaft 14c' to make the holding portion i4a vertical In-plane rotation; 12 200919570 The detachment portion 14b is opened by a cylinder mechanism (not shown), thereby rotating the holding portion 14a to the outside to release the wafer σ from being pushed up, by a spring member (not shown) The holding portion 14a is fixed to one. The retaining member is rotatable in the manner of the pulley 16. The belt 17 is also mounted on the mounting shaft H and the belt 17 is attached to the shaft U. The f and f wheels 16 are hunted by the rotary motor 3, and are rotatable and rotatable under the shape of the bear held by the nozzle holding member 22. The nozzle 5 is at the front end of the nozzle f 22a, and the water is sprayed by the arm side surface liquid as the rinsing liquid. And the nozzle holes 5a of the nozzle j are provided in the nozzle hole 5a which is connected to the flow path 83 by the lifting mechanism 82 such as the iris mechanism, and is provided with the valves 86 and 87. The valve is connected to the pipe ‘end酉^妾8酉管咖. Mountain piping, liquid tank 89. The valve 87 is connected to the pipe 9〇, and the pipe 9 is connected to the DIW supply source 91 of the (DIW). Further, the supply of pure water 91 is connected to the liquid supply tank 89 and the supply source 5 through the pipe 84a and the flow path 83. Further, the chemical liquid tank (9) is connected with pure water which is supplemented with pure water and pure water to the surface liquid supply nozzle discharge liquid, and is supplied to the liquid liquid replenishing line 96a and supplied with a valve 92, 93 for thinning. , connection with 13 200919570 above liquid tank 89. The valve 93 is connected to the pipe 95 and is equipped with a DIW supply source 91. In addition, the other end of the medicine can be connected to the above-mentioned peach, and the pure water is supplied to the back side. The supply of the material is 6%. The supply of the material can be exemplified by, for example, the thinning of the acid liquid. The ammonia liquid hydrogen peroxide (sc), etc. of the liquid liquid can be supplied to the company, and the above liquid medicines are separately provided when the two or more kinds of chemical liquids are tested. For the upper and lower ends of the lifting mechanism 3, and there are branches, 曰H妾, ^84a, 84b. The surface of the circular support 24 has a field wafer holder 24 for use. Crystal. Further, the wafer W is loaded and unloaded by the back side of the connecting member 26 by the lower side. In order to make the 旋转 rotating cup 4 include: the extended circular-shaped shielding portion 31' is inclined from the upper end of the rotating plate 11 toward the inner side and upwards = the outer side wall portion 32, and extends from the outer end portion of the shielding portion 31 vertically downward. ^大三示' is formed between the outer side wall portion 32 and the rotating plate U. 3, the wafer W is rotated together with the rotating plate 11 and the rotating cup 4, and the pure water of the levitating/night or the rinsing liquid is separated from the gap. 33 leads below. Jin + ΐϊ, between the portion 31 and the rotating plate 11, almost the same height as the wafer W f5 ^; f component %. As shown in FIG. 4, between the shielding portion 31 and the guiding member opening member 35 and the rotating plate 11, a plurality of intervals of the plurality of openings 36 and 37 through which the 333 fluid or the rinsing liquid passes are disposed in the circumferential direction. The member 11 is screwed and fixed by the screw 40 to the shielding portion 31, the guiding member 35, the rotating plate, and the spacing members 38, 39 between the members. The guide member 35 is disposed so that the front surface and the back surface of the wafer w are substantially opposite to each other. The wafer holding portion 2 and the rotating cup 4 are aligned with the wafer w by the motor 3 and supplied from the surface side liquid. When the nozzle 5 supplies the processing liquid to the center of the surface of the Japanese yen, the processing liquid is spread on the surface of the wafer W and is ejected from the periphery of the wafer w. When the processing liquid is supplied from the center of the wafer W to the center of the wafer W, the liquid supply nozzle 6 is ejected from the periphery of the wafer W from 14 200919570 36 # ώ ^ ° portion 2 and rotation (4) 4 to the off w-. From now on; rational: two circles;::,;"32 ^, liquid, the surface of the crystal and the back of the surface of the wafer w was removed and processed by the f-fixed position of the mouth 41 so that === The package H = 3 7 is mainly for recycling, and the gas and liquid discharged from the work space surrounded by the rotating plate 11 and the rotating cup 4 are also shown in the enlarged view of Fig. 3, and the annular discharge is performed. The cup 51' receives the processing liquid or the rinsing liquid discharged from the rotating cup 4; the setting = the outer peripheral wall 53, located outside the rotating cup 4, close to the outer side wall portion and perpendicular to the inner side wall 54, extending from the lower end portion of the outer peripheral wall 53 toward the inner side. An inner peripheral wall 54a is formed vertically on the inner circumference of the inner side wall 54. Therefore, the annular space defined by the outer circumference 璧53 liquid 54 jin is the inside 56 for accommodating the discharge from the rotating cup 4. Further, in order to prevent the treatment liquid from flying out of the liquid discharge cup 51, it is known that the extension portion 53a extending to the upper portion of the rotary cup 4 is provided. The position of the outer side of the holding member 14 is extended from the inner side wall 54 to the vicinity of the counter bottom surface, and is disposed in an annular partition wall 55 along the circumferential direction of the liquid discharge cup 51. 15 200919570 Reach the corresponding two to use the treatment liquid from the sub-cup Wei: shown in Figure 1, in the outermost part of the inner side wall 54 of the liquid discharge cup 51, ί discharge liquid 1 discharge σ 6G, the liquid discharge port (10) connection The liquid S 61 is discharged. Further, the drain pipe 61 is provided with a switching valve 1U, and the switching valve m == the night liquid recovery line 112. The discharge valve 113 of the switching valve i ^ is replaced with the discharge liquid f 6b, and the tail line is discarded, and the wafer W, the rotating plate U and the rotating cup 4 are rotated in the body, and are discharged from the rotating cup 4 And the swirling flow of the processing liquid or the rinsing liquid is stored, and the liquid discharging pipe 61 discharges it. The swirling flow is generated only by the wafer % of the rotating plate 11 but by inserting the processing liquid or the rinsing liquid in the liquid discharging cup 51 with the outer side wall portion 32 inserted into the liquid discharging cup 51 when the rotating cup 4 is rotated. A swirling airflow can form a swirling flow that is faster than the speed of the wafer w and the rotating plate u, and the exhaust cup 52 that can increase the liquid discharged from the liquid discharging port 60 includes: an outer side wall 64, perpendicular to the row The outer peripheral portion n65' of the outer peripheral wall 53 of the liquid cup 51 is perpendicular to the inner portion of the holding member 14 and the upper end of the rotating plate bottom wall 66' is provided on the bottom plate 1; and 16 200919570 is provided with the side wall 67, which is bent upward from the outer side wall 64 And covering the top of the rotating cup*, the two guides are provided. The upper side wall 67 and the rotating cup 4 shielding portion 31 are guided from the inside of the rotating cup 4 and the air gas is touched. As shown in Fig. i and Fig. 3, an exhaust pipe = 7 is provided in the lower portion of the exhaust cup 52 to connect the exhaust pipe 71 with a port 70. A pumping structure (not shown) is provided on the downstream side of the exhaust pipe 71. The fine treatment ϋ TM treatment liquid is applied to the outer wall S3 of the outer surface of the liquid discharge cup 51 and the outer surface of the exhaust cup 52, and has an annular outer side annular space 99a, and at the bottom of the liquid discharge cup = ? 52 The exhaust port 70 side portion is provided with a bad air flow adjusting member 97 in the circumferential direction "爹, = = hole 98. Further, the outer annular space 99 T , the exhaust cup 52 is introduced to the exhaust gas, The air flow is two, passing through the outer annular space of the annular space, and spanning = 耽k is uniform (four) below and is provided with a plurality of vent holes, member 97, which imparts airflow resistance and disperses the airflow. ^ The distance from the exhaust port 70 changes, and a relatively uniform exhaust gas is performed. The tunnel is not tunneled and is disposed on the inner peripheral wall 54a of the drain cup 51 and the inner side wall of the exhaust cup 52. The gap between the gaps 77 and 77a, which is led by the lead population 68, passes through the inner annular space 9% across the entire space, and passes through the gap 77 from the exhaust port 70. In this case, the average discharge rate is the same as that of the above, and the liquid and the self-venting cup 52 are excluded from the drain cup 51, so that the ship can be fined with the sub-segment n and even 51 A 'which surrounds the exhaust cup 52 off, it can be quickly discharged through, the mist can be reliably prevented from leaking to the outside. The fly
基板處理裝置100包含由微處理器(電腦)所構成 制為121,基板處理裝置1〇〇各構成部例如_馬達3、閥H 17 200919570 裝構 mr,mrn^^ loo mmm^iTiitt^ 且亦可自其蹄置透過例如相線路適當傳可移動式者。 ‘^^==,記憶部 121 ΐ^Ι/at^ 100 動作:、本= 开=兄明關於如以上構成之基板處理裝置刚之 内之配方由製程控制 器動作係“=== w 5 如圖5⑻所示,使昇降構件13連同°日圓25上。接著 件14固持之位置,藉由固持構件14 =降至可由固持構 所示在===避士至晶= 固持構件2及旋轉杯4 —齊旋^:,轉馬達3使晶圓W與 喷嘴6供給既定_為處=== 面側 条液自晶圓w周緣被甩出。 200919570 ‘ 環透過排液㈣及回收配管 内。在一-之範圍 理時液之純水,與藥液處 ===純水以進行二、 况/处理日寸日日固轉速宜在3〇〇〜15〇〇 為2.0〜4.GL/min。 GG_之耗圍内。且純水供給量宜 :式設圓w外側之方 ==沖擊旋轉杯4時離:力 ^另-方面,在旋轉板 =寺又部^之t故處理液自此部分滴入排液杯51之副= 面口。/杯51所擋住之藥液或沖洗液於其中,— 旋轉形成因外侧壁部32形成 疋 /;,L ^ 。豆蚪間内將其自排液口 60通過排液管61加以排屮 壁:與=:4之 並通過排氣管71==:^環狀導一導入排氣杯52 之以進行相㈣ 日日圓之条液處理。然而沖洗處理 200919570 低。因此將最初之荜液使用於气_ ”,中而^致藥液浪度降 純水消失後再切換切換閱⑴至回收= ,’ ^於沖洗處理時轉速如上述為·〜15〇〇_,相 日:鳇π之純水到達排液杯Μ之外周壁53内侧上部,筚 以,日巧速低於沖洗處理時,具體而言為2。。〜7。。啊’故如 :不以抵達排液杯51之外周壁53内侧上部。因 清洗時間,無法回收而廢棄之藥液ΐ 本Ϊ施形,恐'中’係於沖洗處理後藥液處理時,-開 2沖洗處理時相同之轉速或其以上 -‘ 3口 =圓:;面對晶圓〜供給藥液以_^^ 在^日士 Π ’藥液可迅舰達舰杯之殘餘純水13Q之位置, 且G 故可縮短以藥液進行之清洗時間。 =切換‘至回收;===? 其次説明關於本發明另—實施形能。 旋轉杯4之举署夕她已附以本發明適用於包含 使用旋轉杯^例。Μ之’但本實施職中則將説明關於不 20 200919570 因綠脑g置構成相同。如此之基減理裝置中, 盥前— 礼放之液體自晶圓%直接到達排液杯51。又, ίίϊί!^^^ ? η《取上敎殘餘純水13G,縮_液清洗時間。 :逆_:;=轉ϊ;=存J即相 ^在樂液處理最初之階段以與沖 ϋ 藥、&冗山〜中除此之清洗短時間化之效果外亦可獲得清洗 ΐ ίί,轉―實施職财提高^ϊ^ί。 又本务明不限定於上述實施形態, 上述實施形態中雖已舉例顯示清洗日 ,文》。例如 置,但本發明不限於i ϋ 洗f里裝 开i實ίί ϊ 3已ί不關於使用料體晶圓作為被處理基板之情 代表之平面顯示器(FPD)用基板等其他基板。)土板所 【產業利用性】 洗褒=對用以去除附著於半導體晶圓之微粒或污染物質之清 21 200919570 【圖式簡單說明】 剖面^ _讀本發明―實施職之基域理裝置概略構成之 之概示域依本發明—實施形態之基域理裝置—部分 顯:ϊ ; ίίΐ理裝置之排氣·排液部之剖面圖。 狀態。μ D兄細1基板處理裝置之旋轉杯及51導構件安裝 理動^ _以説明依本發明—實卿態之基板處理裝置清洗處 Ξ=:ΐ液;Πΐ處理後殘餘純水狀態之剖面圖。 ίίί=:形及按照本實施形態晶圓轉速與沖洗處理時同等 站/、以上之_下,排液杯狀態之勤圖。 4 杯部口 2顯示依本發明另-實施形態之基顺 洗處顯示在自圖8之狀態按照本發明使晶圓轉速鱼沖 先處理日代财_或在其社之卿Τ,細_之;面圖中。 【主要元件符號說明】 1〜底板 2〜晶圓固持部 3〜旋轉馬達(馬達) 4〜旋轉杯 5〜表面側液供給喷嘴 5a、6a〜嘴嘴孔 6〜背面側液供給喷嘴 7〜排氣•排液部 8〜殼體 22 200919570The substrate processing apparatus 100 includes 121 which is constituted by a microprocessor (computer), and each component of the substrate processing apparatus 1 is, for example, a motor 3, a valve H 17 200919570, a mr, mrn ^^ loo mmm^iTiitt^ The movable type can be appropriately transmitted from its hoof through, for example, a phase line. '^^==, memory unit 121 ΐ^Ι/at^ 100 Action:, this = open = brother Ming about the substrate processing device as configured above, the recipe is controlled by the process controller "=== w 5 As shown in Fig. 5 (8), the lifting member 13 is brought together with the sun circle 25. The position at which the sealing member 14 is held is lowered by the holding member 14 = can be shown by the holding structure at === refuge to the crystal = holding member 2 and rotating Cup 4 - Swirling ^:, the rotation motor 3 supplies the wafer W and the nozzle 6 to a predetermined position = === The surface side liquid is drawn from the periphery of the wafer w. 200919570 'The ring is discharged through the liquid (4) and the recovery pipe In the range of one - the range of pure water, and the liquid solution === pure water to carry out the second, condition / treatment day inch daily solid speed should be in the range of 3 ~ 15 〇〇 2.0 ~ 4. GL /min. GG_ consumption within the circumference. And the supply of pure water is suitable: the square of the outer side of the circle w == the impact of the rotating cup 4 when the distance: force ^ another - aspect, in the rotating plate = temple and other parts of the t The treatment liquid is dropped from the portion of the liquid discharge cup 51 to the side surface of the liquid discharge cup 51. The liquid medicine or the rinse liquid blocked by the cup 51 is rotated therein to form the outer side wall portion 32 to form 疋/;, L ^. Inside the self-discharge port 60 The draining pipe 61 is connected to the draining wall: and is connected to the exhaust cup 52 through the exhaust pipe 71==:^ by the exhaust pipe 71==:^, and the liquid phase processing of the phase (4) Japanese yen is performed. However, the flushing process 200919570 Therefore, the initial sputum is used in the gas _", and the liquid turbidity is reduced, and then the pure water disappears, and then the switch is switched to read (1) to recycle =, ' ^ The speed of the rinsing process is as above - 15 〇 〇 _, phase: 纯 π pure water reaches the inner part of the outer wall 53 outside the drain cup 筚, 筚, the daily speed is lower than the rinsing treatment, specifically 2 . . ~7. . Ah, for example, it is not to reach the upper inner side of the peripheral wall 53 outside the drain cup 51. Due to the cleaning time, the liquid medicine that cannot be recycled and discarded is ΐ Ϊ , , , , , 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 恐 冲洗 冲洗 冲洗 冲洗 冲洗 冲洗Face wafer ~ supply liquid to _ ^ ^ in the ^ 士 Π 'medicine liquid can be the speed of the ship's residual water 13Q position, and G can shorten the cleaning time with the liquid. = Switch to 'to recycle; ===? Next, explain the other aspects of the invention. In the case of Rotating Cup 4, she has attached the invention to include the use of a rotating cup. Μ之', but this implementation will explain the difference between the 20th and 19th 1919. In such a base reduction device, the liquid of the front-to-living liquid directly reaches the liquid discharge cup 51 from the wafer %. Also, ίίϊί!^^^ ? η "take the remaining pure water 13G, shrinking liquid cleaning time. :Inverse _:;=Transfer;=Save J is the same phase. In the initial stage of the Le liquid treatment, it can also be cleaned in addition to the effect of cleaning the drug, & , turn to the implementation of financial management to improve ^ ϊ ^ ί. Further, the present invention is not limited to the above embodiment, and in the above embodiment, the cleaning date is described as an example. For example, the present invention is not limited to the case of the substrate for flat panel display (FPD) which is represented by the use of the material wafer as the substrate to be processed. Earthen slabs [Industrial use] Washing 褒 = For removing particles or contaminants attached to semiconductor wafers 21 200919570 [Simple description of the drawing] Section ^ _ Read the invention - Summary of the basic equipment of the implementation The outline of the configuration is in accordance with the present invention - the basic structure of the embodiment - part of the display: ϊ ; ίί ΐ 剖面 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 status. DD brother thin 1 substrate processing device rotating cup and 51 guide member installation and control ^ _ to explain the cleaning device according to the invention - the real state of the substrate processing device ΐ =: sputum; Πΐ treatment after the residual pure water state profile Figure. ί 及 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形 形4 cup mouth 2 shows according to another embodiment of the present invention, the base washing position is shown in the state of FIG. 8 according to the present invention, the wafer rotation speed is first processed by the Japanese _ _ _ _ _ _ _ In the picture; [Description of main component symbols] 1 to the bottom plate 2 to the wafer holding portion 3 to the rotary motor (motor) 4 to the rotary cup 5 to the surface side liquid supply nozzles 5a and 6a to the nozzle hole 6 to the back side liquid supply nozzle 7 to the row Gas • draining unit 8 to housing 22 200919570
9a〜導入口 9〜氣流導入部 11〜旋轉板 11a、12a〜孑L 12〜旋轉轴 13〜昇降構件 14〜固持構件(晶圓固持構件) 14a〜固持部 14b〜裝卸部 14c〜旋轉軸 15 a〜轴承 15〜轴承構件 16、18〜帶輪 17〜皮帶 22〜喷嘴固持構件 22a〜喷嘴臂 23〜車由 24〜晶圓支持台 25〜晶圓支持銷(支持銷) 26〜連接構件 27〜缸筒機構 31〜遮蔽部 32〜外側壁部 33〜間隙 35〜引導構件 36、37〜開口 38、39〜間隔構件 40〜螺釘 41〜缺口部 23 200919570 51〜排液杯 52〜排氣杯 53〜外周壁 5 3 a〜延伸部 54〜内侧壁 54a〜内周壁 55〜分隔壁 56〜液收納部 5 6a〜主杯部 56b〜副杯部 57〜底面 57a〜對應主杯部56a之第1部分 57b〜對應副杯部56b之第2部分(第2部分) 58〜孔 60〜排液口 61〜排液管 64〜外侧壁 65〜内侧壁 66〜底壁 67〜上侧壁 68〜導入口 70〜排氣口 71〜排氣管 77〜間隙 81〜驅動機構 82〜昇降機構 83、83a〜流路 84a、84b、88、90、94、95〜配管 86、87、92、93〜閥 24 200919570 89〜藥液槽 91〜DIW供給源 96a〜藥液補充線 96b〜純水供給線 97〜氣流調整構件 98〜通氣孔 99a〜外侧環狀空間 99b〜内側環狀空間 100〜基板處理裝置 111〜切換閥 112〜回收線(藥液回收線)(回收配管) 113〜排放管 121〜製程控制器 122〜使用者介面 123〜記憶部 130〜殘餘純水 W〜晶圓 259a~introduction port 9 to airflow introduction portion 11 to rotary plate 11a, 12a to 孑L 12 to rotary shaft 13 to elevating member 14 to holding member (wafer holding member) 14a to holding portion 14b to attaching and detaching portion 14c to rotating shaft 15 a to bearing 15 to bearing member 16, 18 to pulley 17 to belt 22 to nozzle holding member 22a to nozzle arm 23 to vehicle 24 to wafer support table 25 to wafer support pin (support pin) 26 to connection member 27 - Cylinder mechanism 31 - shielding portion 32 - outer wall portion 33 - gap 35 - guiding member 36, 37 - opening 38, 39 - spacer member 40 - screw 41 - notch portion 23 200919570 51 - drain cup 52 - exhaust cup 53 to the outer peripheral wall 5 3 a to the extending portion 54 to the inner side wall 54 a to the inner peripheral wall 55 to the partition wall 56 to the liquid receiving portion 5 6 a to the main cup portion 56 b to the sub cup portion 57 to the bottom surface 57 a to the main cup portion 56 a 1 part 57b~ corresponding to the second part (second part) of the sub cup part 56b 58~ hole 60~ drain port 61~ drain pipe 64~ outer side wall 65~ inner side wall 66~ bottom wall 67~ upper side wall 68~ Guide port 70 to exhaust port 71 to exhaust pipe 77 to gap 81 to drive mechanism 82 to lift mechanism 83, 83a Flow path 84a, 84b, 88, 90, 94, 95 to pipe 86, 87, 92, 93 to valve 24 200919570 89 to chemical tank 91 to DIW supply source 96a to liquid supply line 96b to pure water supply line 97 - Airflow adjusting member 98 - vent hole 99a - outer annular space 99b - inner annular space 100 - substrate processing apparatus 111 - switching valve 112 - recovery line (chemical liquid recovery line) (recycling pipe) 113 - discharge pipe 121 - process Controller 122 to user interface 123 to memory unit 130 to residual pure water W to wafer 25

Claims (1)

  1. 200919570 十、申請專利範圍: 1· 一種基板處理裝置,特徵在於, 包含: =固持部,可水平固持基板並與基板 ,轉機構,用以使該基板固持部旋轉; 轉, 藥液供給機構’包含用以儲存藥液之率 對基板供給藥液; 梁夜槽,自此藥液槽 機構,用以對基板供給沖洗液; 王衣狀排液杯,設置成包圍由今其 π ^ i 自猶,固持之基板外 之;氣’排_細爾接之齡切洗液並廢棄 液槽回收線,連接該排出管以將已進行排液之藥液回收至該藥 藥液切換⑽啊回«較自該排出管廢棄 控制部,控制以該藥液供 ,機構供給該沖洗液、以該旋、以該沖洗液 構切換於廢棄及回收藥液之間;鼻疋轉基板、以該切換機 且該控制部控制該基板處理 洗處理後以藥液進行藥液處ϋ俾使^以沖洗液進行沖 之轉速或在其以上之轉速一 開始,以與沖洗處理時相同 藉由該藥液供給機構供給藥液旋轉機構旋轉基板-面 該排出管廢棄此時之荜液,土由樂液清洗該排液杯,透過 速縣板之藥液處理時速=以,轉機構旋祕板之轉 切換機構至該回收線側以上之藥液處理,切換該 2.如申請專利範圍第 之排除液體。 設於該排液杯_,俾置,其巾更包含旋轉杯’ 板,與該基板固持部及基板Jf由f基板固持部所固持之基 β灰轉’承接基板旋轉時自基板 26 200919570 3. 甩出之藥液或沖洗液並將其導向該排液杯,同時在 藥液或沖洗液之迴旋流於該排液杯中。 〇疋轉㈣成 「,基板處理方法,在設置斜包圍祕油持部所 板外侧,為承接自旋轉之基板飛散之藥液或沖洗液而環二 排液杯内侧供給藥液及沖洗液以進行基板處理,’、、、义 特徵在於: f 開處理二 ,旋轉機構旋轉基板—面供給藥液 ^ 藥r其後使基板轉速為基^ 4 口處理,並回收此時之排除液體。 進藥液之排出,該迴旋流係因設於該^2 =由,流促 5. 圍由該基板固持部所固持之基板,盘If不之内侧,俾使其包 旋轉’承接基板旋轉時由基“甩出及基板-齊 向該排液杯之旋轉杯旋轉伴隨其而=条液或沖洗液並將其導 一種電腦可讀取記憶媒體,記情有 板處理裳置之程式,其特徵在於上,作,用以控制基 板處理裝置,俾使下列基板時使電腦控制該基 轉之^外侧,承接自旋 沖洗液以it行基域理·之談抛杯_供給藥液及 其中,將對基板供給藥液以科料装J 及對藥液翁叙餘供行處理之步驟 複進行; 洗/夜以進行沖洗處理之步驟反 200919570 杯㊁::㊁,-其 速,以進行基板之藥液處理,並回收此^夺之液處理轉 十一、圖式: 28200919570 X. Patent application scope: 1. A substrate processing apparatus, comprising: a holding portion capable of horizontally holding a substrate and a substrate, a rotating mechanism for rotating the substrate holding portion; and a liquid supply mechanism The solution for supplying the liquid medicine is used to supply the liquid medicine to the substrate; the beam night trough, from the liquid medicine tank mechanism, for supplying the flushing liquid to the substrate; the king clothes-like liquid discharging cup is arranged to surround the current π ^ i self Still, the outside of the substrate is held; the gas is discharged from the slag and the waste liquid recovery line is connected, and the discharge pipe is connected to recover the liquid liquid that has been discharged to the drug liquid (10). «Compared with the discharge pipe disposal control unit, the control is supplied by the chemical liquid, the mechanism supplies the rinse liquid, the rotation is switched, and the rinse liquid structure is switched between the waste and the recovered chemical liquid; the nose is turned to the substrate, and the switch is switched. And the control unit controls the substrate processing and washing treatment, and then the liquid medicine is used to carry out the liquid medicine, so that the rotation speed of the washing liquid is started or the rotation speed is higher than the beginning, so as to be the same as the processing time by the liquid processing. Supply agency Rotating mechanism of the dosing liquid rotates the substrate-surface. The discharge pipe discards the sputum at this time, the soil is cleaned by the liquid liquid, and the speed of the liquid medicine passing through the speed plate is processed, and the switching mechanism of the rotating mechanism of the rotating mechanism To the liquid chemical treatment above the recovery line side, switch the 2. The liquid is excluded as in the scope of the patent application. The tray is disposed in the liquid discharge cup _, and the towel further comprises a rotating cup 'plate, and the substrate holding portion and the substrate Jf are held by the f substrate holding portion. The base is turned grey. The receiving substrate rotates from the substrate 26 200919570 3 The liquid or the rinsing liquid is taken out and directed to the liquid discharging cup, and the swirling liquid or the rinsing liquid flows into the liquid discharging cup. 〇疋 ( 四 四 四 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The substrate processing is performed, and the characteristics of ', , and meaning are: f, the processing is two, the rotating mechanism rotates the substrate, the surface is supplied with the liquid medicine, and the medicine is rotated, and then the substrate rotation speed is treated as a base, and the liquid is removed at this time. The discharge of the chemical liquid is set in the substrate 2, and the flow is promoted by 5. The substrate held by the substrate holding portion is not inside the disk, and the package is rotated. When the substrate is rotated, The base "pull out and the substrate - the rotation of the rotating cup of the liquid discharge cup is accompanied by the liquid or the rinsing liquid and is guided to a computer-readable memory medium, and the program has a plate processing program, and its characteristics In the above, it is used to control the substrate processing device, so that when the following substrate is used, the computer controls the base to rotate the outer side of the substrate, and the spin-washing liquid is taken to the base of the substrate, and the liquid is supplied to the liquid medicine. Supplying the liquid medicine to the substrate to install the chemical material The steps of the treatment of the drug solution Weng Yuyu are repeated; the steps of washing/night to carry out the rinsing treatment are reversed to 200919570 cup 2::2,-the speed thereof, to carry out the liquid chemical treatment of the substrate, and recover the liquid of the liquid Processing turn eleven, schema: 28
TW097127760A 2007-08-29 2008-07-22 Substrate treatment apparatus, substrate treatment method, and storage medium TWI367525B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007222135 2007-08-29

Publications (2)

Publication Number Publication Date
TW200919570A true TW200919570A (en) 2009-05-01
TWI367525B TWI367525B (en) 2012-07-01

Family

ID=40611516

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097127760A TWI367525B (en) 2007-08-29 2008-07-22 Substrate treatment apparatus, substrate treatment method, and storage medium

Country Status (3)

Country Link
JP (1) JP5184253B2 (en)
KR (1) KR101267631B1 (en)
TW (1) TWI367525B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102909202A (en) * 2011-08-02 2013-02-06 采钰科技股份有限公司 Cleaning system, cleaning device, and method of using cleaning device
TWI496200B (en) * 2011-01-25 2015-08-11 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
US9153462B2 (en) 2010-12-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spin chuck for thin wafer cleaning
CN111001606A (en) * 2019-12-27 2020-04-14 上海至纯洁净系统科技股份有限公司 Semiconductor cleaning equipment
CN111112186A (en) * 2019-12-27 2020-05-08 上海至纯洁净系统科技股份有限公司 Wafer cleaning equipment

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6234736B2 (en) 2013-08-30 2017-11-22 芝浦メカトロニクス株式会社 Spin processing device
KR200482998Y1 (en) 2015-12-14 2017-03-24 한전케이피에스 주식회사 grease injection type cover device for power generation equipments

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3089846B2 (en) * 1992-09-03 2000-09-18 富士通株式会社 Wafer processing equipment
JP3035451B2 (en) * 1994-07-19 2000-04-24 大日本スクリーン製造株式会社 Substrate surface treatment equipment
JP2003093979A (en) * 2001-09-25 2003-04-02 Hitachi Ltd Spinning apparatus
JP2004063982A (en) * 2002-07-31 2004-02-26 Seiko Epson Corp Cleaning apparatus and cleaning method
JP2005302746A (en) * 2004-03-05 2005-10-27 Dainippon Screen Mfg Co Ltd Substrate processing method and substrate processor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153462B2 (en) 2010-12-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spin chuck for thin wafer cleaning
TWI496200B (en) * 2011-01-25 2015-08-11 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
CN102909202A (en) * 2011-08-02 2013-02-06 采钰科技股份有限公司 Cleaning system, cleaning device, and method of using cleaning device
CN102909202B (en) * 2011-08-02 2015-11-25 采钰科技股份有限公司 The method of purging system, cleaning device and use cleaning device
CN111001606A (en) * 2019-12-27 2020-04-14 上海至纯洁净系统科技股份有限公司 Semiconductor cleaning equipment
CN111112186A (en) * 2019-12-27 2020-05-08 上海至纯洁净系统科技股份有限公司 Wafer cleaning equipment

Also Published As

Publication number Publication date
TWI367525B (en) 2012-07-01
JP5184253B2 (en) 2013-04-17
KR20090023278A (en) 2009-03-04
KR101267631B1 (en) 2013-05-24
JP2009076878A (en) 2009-04-09

Similar Documents

Publication Publication Date Title
TWI381435B (en) Liquid treatment device, liquid treatment method and memory media
TWI354344B (en)
JP4762098B2 (en) Substrate processing apparatus and substrate processing method
TW200919570A (en) Substrate treatment apparatus, substrate treatment method, and storage medium
KR101244591B1 (en) Sustrate processing device
KR101042666B1 (en) Liquid processing apparatus and method
US8043440B2 (en) Cleaning apparatus and method and computer readable medium
US8127391B2 (en) Subtrate treatment apparatus
TWI448334B (en) Substrate treatment apparatus and substrate treatment method
TWI631640B (en) Substrate processing method and substrate processing apparatus
US20140060424A1 (en) Processing cup and substrate processing apparatus
JP6216200B2 (en) Substrate processing equipment
JP3624116B2 (en) Processing apparatus and processing method
JP2008021983A (en) Method and apparatus for liquid treatment
JP4884167B2 (en) Liquid processing equipment
JP4457046B2 (en) Substrate processing equipment
JP3779582B2 (en) Substrate peripheral processing apparatus and substrate peripheral processing method
JP5100863B2 (en) Liquid processing equipment
KR20090131207A (en) Spin chuck and apparatus and method for cleaning substrate having the same
JP2008060260A (en) Substrate processing apparatus
KR20160116476A (en) Apparatus for cleaning wafer
JP2008091422A (en) Substrate processor