KR101387927B1 - Rinsing and drying device of chemical mechanical polishing system - Google Patents

Abstract

The present invention relates to a spin type rinsing and drying device of a chemical mechanical polishing (CMP) system, wherein the device comprises a substrate settling part rotating with a substrate being settled; a deionized water supplying part for spraying deionized water at the upper surface of the substrate settled at the substrate settling part; a cover having a curved part curled toward the inside at an upper part thereof while surrounding the circumference of the substrate settling part in the form of a cylinder; and a fluid inhalation part installed at the inner wall of the cover and inhaling the fluid at the periphery by using negative pressure before exhausting the fluid, thereby hindering the deionized water used for rinsing the substrate and fine materials separated from the substrate from being attached at the surface of the substrate. As a result, the efficiency of rinsing and drying is improved, and the processing efficiency can be improved by shortening time consumed for rinsing and drying.

Description

Spin-rinse drying apparatus for substrates in chemical mechanical polishing systems {RINSING AND DRYING DEVICE OF CHEMICAL MECHANICAL POLISHING SYSTEM}

The present invention relates to a substrate spin type rinsing and drying apparatus of a chemical mechanical polishing system. A substrate spin type rinse drying apparatus of a chemical mechanical polishing system capable of improving rinsing and drying efficiency in drying a substrate while being rinsed.

In general, a chemical mechanical polishing (CMP) process is a process of planarizing a surface of a substrate by relatively rotating between a substrate such as a wafer for manufacturing a semiconductor having a polishing layer and a polishing platen.

The chemical mechanical polishing system includes a plurality of polishing stations for chemically polishing a substrate such as a wafer, a cleaning station for cleaning abrasive particles and slurry attached to the surface of the substrate after the polishing process, and a substrate cleaned at the cleaning station. To a drying station.

Here, the cleaning process is performed in two stages. In the first cleaning station, the first cleaning station is brushed by spraying with ammonia solution, and the second cleaning station is brushed by spraying the hydrofluoric acid solution to clean the substrate. Remove the abrasive particles and slurry attached to the surface of the. In the drying station, chemical liquids such as ammonia liquid are rinsed and removed to dry the substrate.

More specifically, as shown in FIGS. 1 and 2, the substrate spin type rinsing drying apparatus 1 in the drying station grips the substrate w in a space surrounded by the cover 10 to form a rotating shaft ( 21 is provided by a substrate mounting portion 20 that spins and rotates by a motor M, and a demineralized water supplier 80 is installed at the center of rotation of the substrate w to spray demineralized water 88a. .

A drain port (not shown) for draining demineralized water falling around the rotating substrate w is provided. Through this, the demineralized water which rinses the substrate w is discharged to the outside. At this time, the departure prevention column 22 in which the recessed part 22a which accommodates the outer periphery end of the board | substrate w is formed so that the board | substrate w may not be rocked during a high speed rotation is formed.

When rinsing and drying the substrate w by using the spin type rinsing drying apparatus 1 configured as described above, as shown in FIG. 2, the spins of the substrate w are rotated through the interspace with the cover 10. Vortex 77 that bends upward is induced, and the air around the substrate w is caused by a flow 76 rising upward. The substrate spin type rinsing drying apparatus 1 shown in FIG. 1 is a casing 5 in which a forced flow atmosphere is formed downward by a forced circulation pipe 50 which induces forced flow into the casing 5. In this case, the flow 76 moving upwards again causes contamination of the substrate w.

Accordingly, particles departed from the substrate w by the injection of the demineralized water 88a and the demineralized water 88a used for cleaning the substrate w again adhere to the substrate w, thereby reducing the efficiency of the rinsing and drying process. There is a great need to solve the problem of process delay.

In order to solve the problems described above, the present invention provides a rinsing and drying efficiency for drying while removing foreign matters on the substrate by rotating the substrate at high speed while supplying deionized water (DIW) to the surface of the substrate. It is an object to provide a substrate spin rinse drying apparatus of a chemical mechanical polishing system that can be improved.

That is, the present invention minimizes the re-attachment of demineralized water droplets or foreign substances which are mounted on the substrate holder and spun from the spin-rotating substrate to the substrate again, thereby improving the rinsing and drying performance of the substrate and protruding outward through the upper cover. It aims to minimize the amount of liquid and improve process efficiency by shortening the time required for the rinsing and drying process.

In order to achieve the above object, the present invention provides a spin rinse drying apparatus of a chemical mechanical polishing system, comprising: a substrate holder rotating in a state where a substrate is mounted; Demineralized water supply unit for spraying deionized water (DIW) on the upper surface of the substrate mounted on the substrate holder; A cover having a bent portion bent inward at an upper end thereof with a cylindrical wrap around the substrate holder; A fluid suction part installed on an inner wall of the cover and under negative pressure to suck surrounding fluid and exhaust the outside fluid; It provides a spin rinse drying apparatus of a chemical mechanical polishing system comprising a.

This, while rotating the substrate placed in the substrate holder at a high speed of 1000rpm to 2500rpm, the bent portion bent inward to the upper end of the cover is formed to prevent the demineralized water applied to the surface of the substrate to splash around, and rotates at high speed The vortices formed around the substrate w are sucked through the fluid suction portion and immediately discharged to the outside, so that the demineralized water used for rinsing and the small fine material separated from the substrate are removed from the substrate. This is to minimize the attachment to the surface of the substrate.

Through this, not only the rinsing and drying efficiency is improved, but also the amount of liquid splashing onto the cover is minimized, and the time required for the rinsing and drying process can be shortened to improve the process efficiency.

At this time, as the bent portion is formed in the cover, the vortices around the substrate are concentrated just below the bent portion and in the boundary area between the cover side and the cover bottom surface. Thus, in order to prevent this vortex from being discharged above the cover and contaminating the surroundings, droplets and foreign matter floating with the vortex are not rebounced to the substrate, so that the fluid inlet is directly below the bend. It is preferably arranged adjacently and installed in the boundary region where the cover side and the cover bottom face meet.

That is, the fluid suction port is located above the plate surface of the substrate and sucks all the vortices immediately below the bent portion to discharge it to the outside air. At the same time, another fluid suction port is disposed at the same level or lower than the lower end of the outer circumferential surface of the substrate holder, thereby sucking all the vortices from the lower side that meets the cover bottom surface and discharging it to the outside air.

Through this, even if the inner bent portion is provided at the upper end of the cover to generate a lot of vortices, spin rinsing is performed by simultaneously discharging minute foreign matters such as air and demineralized droplets and dust around the substrate through the fluid inlet at the same time as the vortex is generated. And while preventing demineralized water particles or foreign matters from sticking out through the upper side of the drying apparatus, they can be prevented from re-attaching to the surface of the substrate again, so that the effect of rinsing and drying can be completed more quickly, An advantageous effect can be obtained which is improved.

At this time, since the fluid inlet is configured to suck the flow flowing through the inner wall of the cover around the substrate and to discharge it to the outside, a plurality of spaced apart in the circumferential direction may be arranged around the substrate, and the cover inner wall may be disposed around the substrate. A continuous suction port may thus be arranged in the form of a ring surrounding the substrate.

As described above, the present invention is a substrate holder for placing the substrate to rotate at high speed, and a bent portion protruding inward to the upper end of the cover formed around the substrate holder is formed, the position immediately below the bent portion and the cover side and the cover The deionized water used for rinsing the substrate is configured to be positioned at the boundary area where the bottom surface is in contact, and the vortex generated around the substrate by the bent portion of the cover is sucked into the fluid suction portion and immediately discharged to the outside. An advantageous effect of minimizing reattachment of fine foreign matter off the substrate to the surface of the substrate can be obtained.

Through this, the present invention is excellent in the effect of rinsing, there is an advantage that can shorten the time required for the rinsing and drying process to improve the process efficiency.

1 is a perspective view showing the configuration of a spin rinse drying apparatus of a conventional chemical mechanical polishing system
FIG. 2 is an enlarged view of portion 'A' of FIG.
Figure 3 is a schematic side view showing the configuration of the spin rinse drying apparatus of the chemical mechanical polishing system according to an embodiment of the present invention
4 is an enlarged view of portion 'A' of FIG.
Fig. 5 is a plan view of Fig. 4
FIG. 6 is an enlarged perspective view of a configuration around a cover of FIG. 3 in which a gas suction unit according to another embodiment of the present invention is formed; FIG.
FIG. 7 is an enlarged perspective view of a configuration around a cover of FIG. 3 in which a gas suction unit according to another embodiment of the present invention is formed; FIG.

Hereinafter, with reference to the accompanying drawings will be described in detail the substrate spin type rinsing drying apparatus 100 of the chemical mechanical polishing system according to an embodiment of the present invention. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.

Figure 3 is a side schematic view showing the configuration of a spin rinse drying apparatus of a chemical mechanical polishing system according to an embodiment of the present invention, Figure 4 is an enlarged view of the portion 'A' of Figure 3, Figure 5 is a plan view of Figure 4 to be.

As shown in the figure, the spin rinse drying apparatus 100 of the chemical mechanical polishing system according to an embodiment of the present invention, the substrate holder 120 for rotating at a high speed by mounting the substrate, and the rotating substrate (w ) And a fluid suction unit (130, 130 ') for sucking the flow generated around the substrate (w) during the rinsing and drying process of the substrate (w) and discharging it to the outside air. And the demineralized water supply unit 80 which supplies demineralized water 88a to the plate surface of the substrate w.

The substrate holder 120 is mounted on the upper end of the substrate (w) after the chemical mechanical polishing process and is driven to rotate at a high speed of 300rpm to 2500rpm according to the rotational drive of the rotary shaft 121. An anti-separation pillar 122 having a recessed portion 122a for receiving the outer peripheral end of the substrate w is formed to prevent the substrate w from shaking during the high speed rotation.

The cover 110 is configured to wrap the circumference of the rotating substrate (w) to have a cylindrical shape, and is provided with a bent portion (111) bent inward at the upper end. The bent part 111 is formed to extend inward with a smooth curved cross section so as to prevent the flow inside the cover from flowing out, but the substrate w may be easily seated on the substrate holder 120. ) Is formed to have a length (L) at which the gap (c) can be maintained between the end of the bent portion (111) and the substrate (w) in the state mounted on the substrate holder (120).

The cover 110 includes a cover side spaced apart from an outer circumferential surface of the substrate holder 120, and a cover bottom surface 112 that blocks a lower side of the cover side. Although not shown in the drawing, when the demineralized water 88a supplied to the surface of the substrate w falls around the substrate w, a drain hole for draining the demineralized water that has been dropped may be provided on the cover bottom surface 112.

The fluid suction parts 130 and 130 ′ are disposed at positions where vortex flow is largely generated in the cover 110. That is, when the bent portion 111 is formed inward at the upper end of the cover 110, at the high speed rotation of the substrate holder 120, the vortex 88 is formed in the upper circumferential region 98 directly below the bent portion 111. ) Is largely generated, and the vortex 87 is largely generated in the lower circumferential region 99 where the cover side wall 110s and the cover bottom surface 112 meet. At the same time, due to the high speed rotation of the substrate holder 120, the flow inside the cover 110 generates a vortex in the up and down direction and a rotational flow 89 flowing through the cover inner wall 110.

Thus, the upper fluid inlet 130 'is disposed at a height just below the bend 111 (i.e., a position higher than the plate surface of the substrate w) to deflect the vortex 88 in the upper peripheral region 98. The suction and discharge to the outside, the lower fluid inlet 130 is disposed at the branch height of the cover inner wall (110s) and the catchment (12) (that is, lower than or at least a part of the height of the bottom surface of the substrate holder 120) Thus, the vortex 89 in the lower peripheral region 99 is sucked and discharged to the outside.

The fluid 33 discharged to the outside is not only air moving around the substrate w at high speed, but also droplets in the sprayed state of the demineralized water 88a and fine foreign matter separated in the rinsing process from the surface of the substrate w together. Included. Therefore, when rinsing and drying the substrate w using the substrate rinsing and drying apparatus 100 according to an embodiment of the present invention, the droplets of the demineralized water 88a and the substrate w that have collided with the substrate w are used. Since the foreign matter separated from the) is immediately discharged to the outside by the fluid suction unit 130, it is possible to minimize the phenomenon that the contaminated droplets or foreign matter floating in the cover 110 again adheres to the surface of the substrate (w). .

On the other hand, if the flow in the inside of the cover 110 is increased, the flow has a property of jumping out of the cover, the rinsing and drying apparatus 100 of the substrate according to an embodiment of the present invention, the substrate (w) And by the bent portion 111, the peripheral flow due to the high speed rotation of the substrate holder 120 to be discharged to the outside of the cover 110 is primarily blocked, and the fluid blocked by the bent portion 111 is blocked. Since the inside of the cover 110 flows in the form of vortices 87 and 88 through the discharge pipes 132 and 132 'of the fluid discharge parts 130 and 130', it is discharged to the outside immediately and thus treated. Discharge through the upper open space can minimize contamination.

The fluid suction parts 130 and 130 'may have a suction port 131 and 131' communicating with a negative pressure generating means such as a vacuum pump (not shown) and a fluid sucked by the suction ports 131 and 131 '. It consists of discharge pipes (132, 132 ') to discharge to the outside collected in the place (the term' outside 'of the present specification means a separate place for disposal, etc.), in the circumferential direction of each region (98, 99) Is placed around. 4 and 5 illustrate that the inlets 131 and 131 'are formed to protrude from the cover inner wall 110s, but according to another embodiment 1001 of the present invention, as shown in FIG. It may be formed as a suction port 1301 in the form of a hole formed in 110s (the configuration of the discharge pipe is not shown in the figure for convenience).

Meanwhile, as illustrated in FIG. 5, the fluid suction units 130 and 130 ′ are spaced apart from the inner wall 110s of the cover 110 at predetermined rotation angle intervals (15 to 120 degrees). According to another embodiment 1002 of the present invention, as shown in FIG. 7, the suction port 1302 of the fluid suction part is formed in a ring shape along the inner wall 110s of the cover, such as a vortex around the substrate holder 120. Can also be sucked out over the entire circumference (the configuration of the discharge tube is not shown in the figure for convenience). At this time, the inlet 1302 may be formed directly on the cover inner wall (110s), or may be formed in the form of a module attached to the cover inner wall (110s).

Spin rinse drying apparatus 100 of the substrate of the chemical mechanical polishing system according to an embodiment of the present invention configured as described above, by the action and principle as described above, the surrounding air together with the demineralized water supplied vortex (87) 88 and the demineralized water and the substrate used for rinsing the substrate w as it is immediately discharged to the outside together with the fine droplets and foreign matter floating through the fluid intakes 130 and 130 'while forming the rotating flow 89. By minimizing fine particles separated from the surface of (w) floating around the substrate (w) and then adhering to the surface of the substrate (w) again, the process efficiency is improved by shortening the time required for the process while improving the rinsing effect. Advantageous effects that can be improved can be obtained.

In the above, the preferred embodiments of the present invention have been described by way of example, but the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims. For example, in the exemplary embodiment of the present invention illustrated in the drawings, the fluid intake unit is installed in both the upper circumferential region 98 and the lower circumferential region 99 as an example. The configuration provided in any one of the lower peripheral region 99 and the configuration provided between the upper peripheral region 98 and the lower peripheral region 99 fall within the scope of the present invention within the scope of the claims. It is too obvious.

DESCRIPTION OF REFERENCE NUMERALS
10: substrate holder 33: discharge fluid
80: demineralized water supply unit 88a: demineralized water
100: substrate spin type rinse drying apparatus 110: cover
130, 130 ': fluid inlet 131, 131', 1301, 1302: inlet 132, 132 ': discharge pipe

Claims (6)

Spin rinse drying apparatus of a chemical mechanical polishing system,
A substrate holder configured to include a plurality of separation preventing pillars having recesses for accommodating an outer circumferential end of the circular substrate, for mounting and rotating the substrate on the separation preventing pillars with the bottom surface exposed;
A cover having a bent portion bent inwardly at an upper end of the substrate holder while being cylindrically wrapped around the substrate holder in a size such that a gap between the outer peripheral end of the substrate is maintained while the substrate is seated on the substrate holder;
Demineralized water supply unit for spraying deionized water (DIW) on the upper surface of the substrate mounted on the substrate holder;
Located at a height above the plate surface of the substrate and adjacent to the lower side of the bent portion, a plurality of spaced apart in the circumferential direction around the substrate, provided on the inner wall of the cover, the negative pressure acts to rise below the bent portion A fluid suction unit for directly sucking the fluid to be discharged to the outside;
And a fluid flow moving upward in the gap by the rotation of the substrate holder reaches the bent portion and is immediately discharged to the outside by the fluid suction portion. Rinse drying device.
The method of claim 1,
The fluid suction unit is a spin rinse drying apparatus of the chemical mechanical polishing system, characterized in that additionally disposed at the same level or lower than the lower end of the outer peripheral surface of the substrate holder
3. The method of claim 2,
The fluid rinse unit is disposed adjacent to the bottom surface of the cover spin rinse drying apparatus of a chemical mechanical polishing system




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