JP6027465B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by supplying a processing liquid to a rotating substrate.

  Conventionally, when manufacturing a semiconductor component, a flat panel display, or the like, liquid processing is performed on a substrate such as a semiconductor wafer or a liquid crystal substrate using various processing liquids such as a cleaning liquid and an etching liquid.

  In the substrate processing apparatus used in the liquid processing on the substrate, the processing liquid is supplied to the substrate by the processing liquid supply means while the substrate is rotated by the substrate rotating means, so that the substrate is treated with the processing liquid in the substrate processing chamber. To process.

  In the substrate processing apparatus, a recovery cup is disposed around the substrate, and the processing liquid supplied to the substrate is recovered by the recovery cup.

  An existing exhaust system is connected to the recovery cup at the factory where the substrate processing apparatus is installed, and the air sucked from the upper opening of the recovery cup by the exhaust system is discharged from the bottom of the recovery cup to the outside. As a result, an airflow that flows from the upper side of the substrate to the lower side of the substrate through the outside of the edge of the substrate is generated, and the mist-like processing liquid or the like is discharged from the substrate processing chamber to the outside by this airflow. (For example, refer to Patent Document 1).

JP 2008-34490 A

  However, the conventional substrate processing apparatus uses the exhaust equipment of the factory where the substrate processing apparatus is installed, and the amount and flow velocity of the air flow generated around the substrate during the processing of the substrate depends on the ability of the exhaust means. .

  Therefore, when the exhaust amount required by the substrate processing apparatus cannot be obtained from the exhaust facility, an air flow suitable for processing the substrate cannot be generated around the substrate, and the processing liquid scattered from the rotating substrate is not collected in the recovery cup. There is a possibility that the processing liquid or particles will bounce off the inner wall and adhere to the surface of the substrate, so that the liquid processing of the substrate cannot be performed satisfactorily.

Therefore, in the present invention, in a substrate processing apparatus for processing a substrate by supplying a processing liquid to a rotating substrate, substrate rotating means for rotating the substrate, and for supplying the processing liquid to the substrate A processing liquid supply means, disposed around the substrate, collects the processing liquid supplied to the substrate, and forms an airflow that flows from the upper opening to the lower part through the outer edge of the substrate. and collecting cup for, provided outside than the opening of the collection cup, which acts toward the outside of the substrate by flowing a compressed gas supplied from the gas supply port along the inner wall of the collecting cup It was decided to have negative pressure generating means for generating negative pressure.

The recovery cup includes an annular peripheral wall portion, and a protruding portion that protrudes radially inward from an upper end of the peripheral wall portion to form the opening having a smaller diameter than the peripheral wall portion, The gas supply port of the negative pressure generating means is formed at the protruding portion, and the inner surface of the peripheral wall portion and the inner surface of the protruding portion are concave surfaces that are continuous from above the peripheral wall portion to below the protruding portion. The inner surface of the projecting portion connected to the lower portion of the gas supply port is configured as a continuous surface composed of a convex curved portion.

Further, the negative pressure generating means changes the magnitude of the negative pressure generated by changing the pressure or flow rate of the compressed gas .

According to the present invention, in the substrate processing method for processing the substrate by supplying a processing liquid to a rotating substrate, the processing liquid supplied to the substrate is collected by a recovery cup when the substrate is processed with the processing liquid. Collecting and forming an air flow that flows from the upper opening of the recovery cup to the lower part through the outer edge of the substrate, and further outside the opening of the recovery cup outside the opening of the recovery cup. The recovery cup is formed with an annular peripheral wall portion, and a tension that projects radially inward from the upper end of the peripheral wall portion to form the opening having a smaller diameter than the peripheral wall portion. And a gas supply port is formed through the overhanging portion, and the inner surface of the peripheral wall portion and the inner surface of the overhanging portion are continuously extended from above the peripheral wall portion to below the overhanging portion. Consists of a concave surface, the gas supply An inner surface of the overhanging portion connected to the lower portion of the substrate is formed of a continuous surface made of a convex curved portion, and a compressed gas flows from the gas supply port along the inner wall of the recovery cup to the outside of the substrate. to produce a negative pressure acting toward and to be relocated to the magnitude of the negative pressure to be generated by changing the pressure or the flow rate of the compressed gas. In particular, a rinsing process for rinsing the substrate with a rinsing liquid as the processing liquid is provided, and the negative pressure generated when a predetermined time has elapsed from the start of the rinsing process is reduced. In addition, the substrate has a drying process step for drying the substrate after the liquid processing, and the negative pressure generated after the negative pressure is generated in the drying process step is reduced.

  In the present invention, it is possible to obtain an exhaust amount necessary for processing a substrate without depending on the capacity of an exhaust facility of a factory.

The top view which shows a substrate processing apparatus. The top view which shows a substrate liquid processing apparatus. FIG. FIG. Operation | movement explanatory drawing (substrate receiving process) of a substrate liquid processing apparatus. Operation | movement explanatory drawing of a board | substrate liquid processing apparatus (cleaning process process). Operation | movement explanatory drawing of a substrate liquid processing apparatus (rinse process). Operation | movement explanatory drawing of a substrate liquid processing apparatus (drying process process). Operation | movement explanatory drawing of a board | substrate liquid processing apparatus (board | substrate delivery process). Explanatory drawing which shows another substrate liquid processing apparatus.

  Hereinafter, specific configurations of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the substrate processing apparatus 1 forms a carry-in / out unit 2 at the front end. A carrier 4 containing a plurality of (for example, 25) substrates 3 (in this case, semiconductor wafers) is carried into and out of the carry-in / out unit 2 and placed side by side on the left and right.

  Further, the substrate processing apparatus 1 forms a transport unit 5 at the rear part of the carry-in / out unit 2. The transfer unit 5 has a substrate transfer device 6 disposed on the front side and a substrate delivery table 7 disposed on the rear side. In the transport unit 5, the substrate 3 is transported between the carrier 4 placed on the carry-in / out unit 2 and the substrate delivery table 7 using the substrate transport device 6.

  Further, the substrate processing apparatus 1 forms a processing unit 8 at the rear part of the transport unit 5. The processing unit 8 has a substrate transfer device 9 extending in the front and rear at the center, and a substrate liquid processing device 10 for liquid processing the substrate 3 on the left and right sides of the substrate transfer device 9. In the processing unit 8, the substrate 3 is transferred between the substrate delivery table 7 and the substrate liquid processing apparatus 10 using the substrate transfer apparatus 9, and the substrate 3 is liquid processed using the substrate liquid processing apparatus 10.

  As shown in FIGS. 2 and 3, the substrate liquid processing apparatus 10 is provided with a substrate rotating chamber 12, a cleaning liquid supplying means 13 as a processing liquid supplying means, a rinsing liquid supplying means 14 and a draining means 15 in a substrate processing chamber 11. ing. A control means 16 is connected to the substrate rotation means 12, the cleaning liquid supply means 13, the rinse liquid supply means 14, and the drainage means 15, and the drive is controlled by the control means 16. The substrate liquid processing apparatus 10 has a substrate processing chamber 11 formed inside the housing 49 and a fan filter unit 50 attached to the upper portion of the housing 49 in order to supply clean air to the substrate processing chamber 11. Yes.

  The substrate rotating means 12 is provided with a rotating shaft 17 extending up and down inside the substrate processing chamber 11, a disc-shaped turntable 18 is horizontally attached to the upper end of the rotating shaft 17, and 3 on the outer peripheral edge of the turntable 18. The individual substrate holders 19 are attached at equal intervals in the circumferential direction.

  The substrate rotating means 12 connects the substrate rotating mechanism 20 and the substrate lifting mechanism 21 to the rotating shaft 17. The substrate rotating mechanism 20 and the substrate elevating mechanism 21 are controlled to rotate and elevate by the control means 16.

  The substrate rotating means 12 holds the substrate 3 horizontally by the substrate holder 19 of the turntable 18. The substrate rotating means 12 rotates the substrate 3 held on the turntable 18 by the substrate rotating mechanism 20 and moves the substrate 3 held on the turntable 18 and the turntable 18 by the substrate lifting mechanism 21.

  The processing liquid supply means includes a cleaning liquid supply means 13 for supplying a cleaning liquid (chemical solution) as the processing liquid and a rinsing liquid supply means 14 for supplying a rinsing liquid (pure water) as the processing liquid.

  The cleaning liquid supply means 13 is provided with a support shaft 22 extending vertically in the substrate processing chamber 11, an arm 23 is horizontally mounted on the upper end of the support shaft 22, and a cleaning liquid discharge nozzle 24 is disposed on the lower substrate at the lower end of the arm 23. 3 is attached. A cleaning liquid discharge nozzle moving mechanism 25 is connected to the support shaft 22. The cleaning liquid discharge nozzle moving mechanism 25 is driven and controlled by the control means 16.

  The cleaning liquid supply means 13 is connected to a cleaning liquid supply mechanism 26 for supplying the cleaning liquid to the cleaning liquid discharge nozzle 24. The cleaning liquid supply mechanism 26 is supplied and controlled by the control means 16.

  The cleaning liquid supply means 13 causes the cleaning liquid discharge nozzle moving mechanism 25 to reciprocate the cleaning liquid discharge nozzle 24 between the upper center of the substrate 3 (start position) and the outer edge of the substrate 3 (retracted position). The supply mechanism 26 supplies the cleaning liquid from the cleaning liquid discharge nozzle 24 toward the surface (upper surface) of the substrate 3.

  The rinsing liquid supply means 14 is provided with a support shaft 27 extending vertically in the substrate processing chamber 11, an arm 28 is horizontally attached to the upper end of the support shaft 27, and a rinsing liquid discharge nozzle 29 is disposed below the lower end of the arm 28. It is attached toward the substrate 3. A rinsing liquid discharge nozzle moving mechanism 30 is connected to the support shaft 27. The rinse liquid discharge nozzle moving mechanism 30 is driven and controlled by the control means 16.

  The rinse liquid supply means 14 is connected to a rinse liquid supply mechanism 31 for supplying a rinse liquid to the rinse liquid discharge nozzle 29. The rinse liquid supply mechanism 31 is supplied and controlled by the control means 16.

  The rinsing liquid supply means 14 causes the rinsing liquid discharge nozzle moving mechanism 30 to reciprocate the rinsing liquid discharge nozzle 29 between the center upper side (start position) of the substrate 3 and the outer edge of the substrate 3 (retracted position). At the same time, the rinse liquid supply mechanism 31 supplies the rinse liquid from the rinse liquid discharge nozzle 29 toward the surface (upper surface) of the substrate 3.

  In the drainage means 15, an annular collection cup 32 is disposed around the substrate 3, and a drainage mechanism 33 is connected to the inner lower part (bottom part) of the collection cup 32. The drainage mechanism 33 is driven and controlled by the control means 16.

  The drainage means 15 collects the processing liquid supplied to the surface of the substrate 3 by the recovery cup 32 and discharges it from the recovery cup 32 to the outside by the drainage mechanism 33.

  The recovery cup 32 has a disk-shaped bottom portion 44 and an annular peripheral wall portion 45 that rises upward from the outer peripheral edge portion of the bottom portion 44 so as to protrude radially inward from the upper end of the peripheral wall portion 45. And a projecting portion 46 that forms a circular opening 34 having a smaller diameter than 45. The opening 34 is formed to be slightly larger than the substrate 3 so that the substrate 3 can be raised and lowered when the substrate 3 is carried in and out.

  Further, the recovery cup 32 has an exhaust path 35 connected to the bottom 44. As a result, the air inside the substrate processing chamber 11 sucked from the opening 34 at the top of the recovery cup 32 is discharged from the bottom 44 of the recovery cup 32 to the outside. At that time, an air flow is generated from above the substrate 3 to the outside of the edge of the substrate 3 and flowing downward to the substrate 3, and this air current causes mist-like processing liquid or the like to flow from the substrate processing chamber 11 to the outside. Discharge (see FIG. 4A). Note that the exhaust path 35 may be integrated into the substrate processing apparatus 1.

  Further, the recovery cup 32 is formed with a negative pressure generating means 36 for generating a negative pressure that attracts an internal air flow toward the outside of the substrate 3 inside the recovery cup 32 and outside the opening 34. . In this embodiment, the negative pressure generating means 36 is formed above the substrate 3 and in the overhanging portion 46.

  More specifically, the negative pressure generating means 36 forms four arc-shaped slit-shaped gas supply ports 37 having a constant width along the outer periphery of the opening 34 outside the opening 34 of the overhanging portion 46 in the circumferential direction. To do. The gas supply port 37 may have a shape sufficient to generate a negative pressure, and the number is not limited to four.

  An annular cover 38 having an inverted U-shaped section (portion-shaped cross section) is attached to the upper part of the four gas supply ports 37. The cover 38 has a gas flow path 39 having a width wider than that of the gas supply port 37 therein. The cover 38 has four connecting pipes 40 attached to the outer peripheral portion at equal intervals in the circumferential direction, and is connected to a compressed gas supply mechanism 41 for supplying compressed gas to the connecting pipe 40. The compressed gas supply mechanism 41 is controlled by the control means 16 for operation / stop and flow rate control. The number of the connecting pipes 40 is not limited to four as long as the compressed gas can be supplied to the gas supply port 37.

  The inner wall 42 of the recovery cup 32 is formed of a concave surface that continues from the upper side of the peripheral wall 45 to the lower side of the overhang 46 with the inner surface of the peripheral wall 45 and the inner surface of the overhang 46. In addition, the inner wall 42 is configured by a continuous surface including a convex curved portion 47 on the inner surface of the overhanging portion 46 connected to the lower portion of the gas supply port 37. Further, the inner wall 42 is configured by a continuous surface including a convex curved portion 48 on the inner surface of the overhanging portion 46 that is connected to the opening 34 from the lower portion of the gas supply port 37.

  As shown in FIG. 4A, the negative pressure generating means 36 is in a stopped state in which no negative pressure is generated when the compressed gas supply mechanism 41 does not supply compressed gas to the gas supply port 37 of the recovery cup 32. It has become. On the other hand, as shown in FIG. 4B, when compressed gas is supplied to the gas supply port 37 of the recovery cup 32 by the compressed gas supply mechanism 41, the compressed gas flows from the gas supply port 37 along the inner wall 42. Along with this, an operation state occurs in which negative pressure is generated by the Coanda effect. In the operating state, an airflow that flows from above the substrate 3 to the outside of the edge of the substrate 3 and below the substrate 3 by the negative pressure due to the Coanda effect is attracted to the outside of the substrate 3 along the inner wall 42. In addition, the flow rate and flow velocity of the airflow passing outside the edge of the substrate 3 increase. The flow rate and flow rate of the airflow can be controlled by the flow rate and flow rate of the compressed gas supplied by the compressed gas supply mechanism 41.

  Since the negative pressure generating means 36 forms a gas channel 39 wider than the gas supply port 37 above the gas supply port 37, the gas channel 39 functions as a damper and functions as a gas supply port 37. The compressed gas having a predetermined flow rate can be uniformly supplied at a predetermined flow rate. In addition, since the curved portion 47 having a surface continuous with the gas supply port 37 is formed in the lower part of the gas supply port 37, the airflow or the compressed gas flows smoothly along the curved portion 47 as a laminar flow. For this reason, it is easy to generate the Coanda effect. Further, since the curved portion 48 having a surface continuous with the opening 34 is formed at the lower portion of the opening 34, the airflow sucked from the opening 34 becomes a laminar flow and flows smoothly along the curved portion 48.

  The negative pressure generating means 36 for generating a negative pressure by the Coanda effect is not limited to the case of being provided inside the recovery cup 32, and may be provided in the middle of the exhaust passage 35. For example, as shown in FIG. 10, a negative pressure generating means 36 ′ is provided in the middle of the exhaust passage 35 of the recovery cup 32, and a compressed gas supply mechanism 41 ′ is connected to the negative pressure generating means 36 ′. Then, the Coanda effect is generated by supplying the compressed gas from the compressed gas supply mechanism 41 ′ to the negative pressure generating means 36 ′. Thereby, since the airflow flowing from the recovery cup 32 to the exhaust path 35 is attracted by the flow of the compressed gas, the flow rate and flow velocity of the airflow flowing inside the recovery cup 32 can be increased.

  The substrate processing apparatus 1 is configured as described above, and is controlled by the control means 16 according to various programs recorded on the recording medium 43 provided in the control means 16 (computer) to process the substrate 3. Do. Here, the recording medium 43 stores various setting data and programs, and is well-known such as a memory such as ROM and RAM, and a disk-shaped recording medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk. Composed of things.

  Then, the substrate processing apparatus 1 performs the cleaning process of the substrate 3 as described below according to the substrate processing program recorded on the recording medium 43.

  First, as shown in FIG. 5, the substrate processing apparatus 1 receives the substrate 3 transported by the substrate transport apparatus 9 by the substrate liquid processing apparatus 10 (substrate receiving step).

  In this substrate receiving step, the turntable 18 is raised to a predetermined position by the substrate lifting mechanism 21 of the substrate rotating means 12. Then, the single substrate 3 transferred from the substrate transfer device 9 to the inside of the substrate processing chamber 11 is received while being held horizontally by the substrate holder 19. Thereafter, the turntable 18 is lowered to a predetermined position by the substrate lifting mechanism 21. The cleaning liquid discharge nozzle 24 and the rinsing liquid discharge nozzle 29 are retracted to the retracted position outside the outer periphery of the turntable 18.

  Next, as shown in FIG. 6, the substrate processing apparatus 1 processes the surface of the substrate 3 with a cleaning liquid (cleaning process step).

  In this cleaning process, the cleaning liquid discharge nozzle moving mechanism 25 of the cleaning liquid supply means 13 rotates the support shaft 22 to move the cleaning liquid discharge nozzle 24 to the supply start position above the center of the substrate 3. Further, the substrate 3 is rotated by rotating the turntable 18 at a predetermined rotation speed by the substrate rotating mechanism 20 of the substrate rotating means 12. Thereafter, the cleaning liquid supply mechanism 26 of the cleaning liquid supply means 13 discharges a predetermined amount of cleaning liquid from the cleaning liquid discharge nozzle 24 toward the surface of the substrate 3. Further, the cleaning liquid discharge nozzle 24 is reciprocated horizontally along the substrate 3 by the cleaning liquid discharge nozzle moving mechanism 25 of the cleaning liquid supply means 13. The cleaning liquid supplied to the substrate 3 is recovered by the recovery cup 32 and discharged to the outside by the drainage mechanism 33. Further, at the end of the cleaning process, the cleaning liquid discharge nozzle moving mechanism 25 of the cleaning liquid supply means 13 rotates the support shaft 22 to move the cleaning liquid discharge nozzle 24 to a retracted position outside the outer periphery of the substrate 3. Further, the cleaning liquid supply mechanism 26 of the cleaning liquid supply means 13 stops the discharge of the cleaning liquid.

  In this cleaning process, the substrate processing apparatus 1 operates the negative pressure generating means 36. That is, the compressed gas supply mechanism 41 supplies a predetermined flow rate of compressed gas to the gas supply port 37 of the recovery cup 32. The compressed gas flows from the gas supply port 37 along the inner wall 42 and flows into the recovery cup 32 from the opening 34 of the recovery cup 32 due to the generation of negative pressure by the Coanda effect. The airflow that passes and flows below the substrate 3 is attracted to the outside of the substrate 3 along the inner wall 42 of the recovery cup 32, and the flow rate and flow velocity increase.

  As described above, the airflow passing through the vicinity of the substrate 3 is attracted to the outside of the substrate 3 and the flow rate and flow velocity of the airflow are increased. The mist of the cleaning liquid is smoothly discharged from the recovery cup 32 along with the airflow flowing along the inner wall 42. Therefore, it is possible to prevent the cleaning liquid mist scattered from the rotating substrate 3 from splashing on the inner wall of the recovery cup 32 and adhering to the surface of the substrate 3. Since the mist of the cleaning liquid can be discharged efficiently, the substrate 3 can be cleaned well.

  In the cleaning process, the substrate processing apparatus 1 supplies the compressed gas at a constant flow rate with a constant pressure from the compressed gas supply mechanism 41 to keep the negative pressure generated by the negative pressure generating means 36 constant. However, the present invention is not limited to this, and the negative pressure generated by the negative pressure generating means 36 by changing the pressure and flow rate of the compressed gas supplied from the compressed gas supply mechanism 41 according to the flow rate of the cleaning liquid and the time from the start of the cleaning process. You may control to change the magnitude | size of a pressure.

  Next, as shown in FIG. 7, the substrate processing apparatus 1 processes the surface of the substrate 3 with a rinsing liquid (rinsing process).

  In this rinsing process, the rinsing liquid discharge nozzle moving mechanism 30 of the rinsing liquid supply means 14 rotates the support shaft 27 to move the rinsing liquid discharge nozzle 29 to the supply start position above the center of the substrate 3. Further, the substrate 3 is rotated by rotating the turntable 18 at a predetermined rotation speed by the substrate rotating mechanism 20 of the substrate rotating means 12. Thereafter, a rinsing liquid supply mechanism 31 of the rinsing liquid supply means 14 discharges a predetermined flow of rinsing liquid from the rinsing liquid discharge nozzle 29 toward the surface of the substrate 3. Further, the rinse liquid discharge nozzle 29 is reciprocated horizontally along the substrate 3 by the rinse liquid discharge nozzle moving mechanism 30 of the rinse liquid supply means 14. The rinse liquid supplied to the substrate 3 is recovered by the recovery cup 32 and discharged to the outside by the drainage mechanism 33. Further, at the end of the rinsing process, the rinsing liquid discharge nozzle moving mechanism 30 of the rinsing liquid supply means 14 rotates the support shaft 27 to move the rinsing liquid discharge nozzle 29 to the retracted position outside the outer periphery of the substrate 3. Let Further, the rinse liquid supply mechanism 31 of the rinse liquid supply means 14 stops the discharge of the rinse liquid.

  In this rinsing process, the substrate processing apparatus 1 operates the negative pressure generating means 36 as in the cleaning process. As a result, the airflow passing through the vicinity of the substrate 3 is attracted to the outside of the substrate 3 and the flow rate and flow velocity of the airflow are increased, so that the rinsing liquid supplied from the rinsing liquid discharge nozzle 29 to the surface of the substrate 3. Is smoothly discharged from the recovery cup 32 together with the airflow. Therefore, it is possible to prevent the rinsing liquid scattered from the rotating substrate 3 from splashing on the inner wall of the recovery cup 32 and adhering to the surface of the substrate 3, and the rinsing treatment of the substrate 3 can be performed satisfactorily. The negative pressure may be controlled so as to change in accordance with the flow rate of the rinsing liquid, the time from the start of the rinsing process, or the like. For example, the negative pressure generated by the negative pressure generating means 36 may be reduced when a predetermined time has elapsed since the start of the rinsing process. At the start of the rinsing process, mist of the cleaning liquid generated in the cleaning process may remain above the substrate 3 in some cases. By discharging the mist of the cleaning liquid at an early stage of the rinsing process, adhesion to the substrate 3 can be suppressed, so that the substrate 3 can be cleaned well.

  Next, as shown in FIG. 8, the substrate processing apparatus 1 rotates the substrate 3 and shakes and removes the rinse liquid from the surface of the substrate 3 to perform a drying process on the substrate 3 (drying process step).

  In this drying process, the substrate 3 is rotated by rotating the turntable 18 at a higher rotational speed than the cleaning process and the rinse process by the substrate rotating mechanism 20 of the substrate rotating means 12. By rotating the substrate 3, the rinse liquid remaining on the surface of the substrate 3 is shaken off by the centrifugal force of the rotating substrate 3, and the rinse liquid is removed from the surface of the substrate 3 and dried. The rinse liquid shaken off from the substrate 3 is recovered by the recovery cup 32 and discharged to the outside by the drainage mechanism 33.

  In the drying process, the substrate processing apparatus 1 stops the operation of the negative pressure generating unit 36.

  In the drying process, the substrate processing apparatus 1 stops the operation of the negative pressure generating unit 36 from the start to the end of the drying process. However, the present invention is not limited to this, and the negative pressure is generated at the start of the drying process. The generating unit 36 may be operated to generate a negative pressure, and then the driving of the negative pressure generating unit 36 may be stopped, or the generated negative pressure may be gradually reduced. Thus, at the start of the drying process, a mist-like processing liquid may be drifting around the substrate 3, and the mist-like processing liquid is attached to the substrate 3 by discharging the mist-like processing liquid at an early stage of the drying process. Therefore, it is possible to satisfactorily dry the substrate 3.

  Finally, as shown in FIG. 9, the substrate processing apparatus 1 transfers the substrate 3 from the substrate liquid processing apparatus 10 to the substrate transfer apparatus 9 (substrate transfer process).

  In this substrate delivery process, the rotation of the turntable 18 is stopped by the substrate rotating mechanism 20 of the substrate rotating means 12, and the turntable 18 is raised to a predetermined position by the substrate lifting mechanism 21. Then, the substrate 3 held by the turntable 18 is delivered to the substrate transfer device 9. Thereafter, the turntable 18 is lowered to a predetermined position by the substrate lifting mechanism 21. The cleaning liquid discharge nozzle 24 and the rinsing liquid discharge nozzle 29 are retracted to the retracted position outside the outer periphery of the turntable 18.

  As described above, in the substrate processing apparatus 1 (a substrate processing method or a substrate processing program executed by the substrate processing apparatus 1), the processing liquid (supplied to the substrate 3 by the recovery cup 32 disposed around the substrate 3 ( (Cleaning liquid and rinsing liquid) are collected, and an airflow is formed from the upper opening 34 to the outside of the edge of the substrate 3 and flowing downward. A negative pressure generating means 36 for generating a negative pressure acting outward of the substrate 3 is formed inside the recovery cup 32 and outside the opening 34. By generating a negative pressure with this negative pressure generating means 36, an airflow flowing from the upper side of the substrate 3 to the lower side of the substrate 3 through the outer edge of the substrate 3 is directed toward the inner wall 42 of the recovery cup 32, That is, it flows toward the outside of the substrate 3. Thereby, it is possible to prevent the processing liquid splashed from the rotating substrate 3 from splashing on the inner wall of the recovery cup 32 and adhering to the surface of the substrate 3, and the exhaust amount required by the substrate processing apparatus 1 is reduced to the exhaust equipment. Even if it cannot be obtained from the above, it is possible to satisfactorily treat the substrate 3 with the treatment liquid. If the negative pressure is generated by generating the Coanda effect by the negative pressure generating means 36, the flow rate and flow velocity of the airflow increase, and the substrate 3 can be satisfactorily processed with the processing liquid. In the substrate processing apparatus 1, a cleaning liquid or a rinsing liquid is used as the processing liquid. However, the present invention is not limited to this, and the same effect can be obtained even when various liquids such as an etching liquid, a developer, and a hydrophobizing liquid are used. can get.

1 Substrate processing device 3 Substrate
10 Substrate liquid processing equipment
11 Substrate processing chamber
12 Substrate rotating means
13 Cleaning liquid supply means
14 Rinsing solution supply means
15 Drainage means
16 Control means
32 collection cup
34 opening
36 Negative pressure generation means

Claims (6)

In a substrate processing apparatus for processing a substrate by supplying a processing liquid to a rotating substrate,
Substrate rotating means for rotating the substrate;
A processing liquid supply means for supplying the processing liquid to the substrate;
A recovery cup disposed around the substrate for recovering the processing liquid supplied to the substrate and for forming an airflow that flows from the upper opening to the lower end through the outer edge of the substrate; ,
For generating a negative pressure that is provided outside the opening of the recovery cup and acts toward the outside of the substrate by flowing compressed gas supplied from a gas supply port along the inner wall of the recovery cup. Negative pressure generating means;
Have
The recovery cup has an annular peripheral wall portion, and an overhang portion that protrudes radially inward from an upper end of the peripheral wall portion to form the opening having a smaller diameter than the peripheral wall portion, and the overhang portion The gas supply port of the negative pressure generating means is formed, and the inner surface of the peripheral wall portion and the inner surface of the overhanging portion are constituted by a concave surface continuous from the upper side of the peripheral wall portion to the lower side of the overhanging portion. The inner surface of the projecting portion connected to the lower part of the gas supply port is constituted by a continuous surface composed of a convex curved portion ,
The substrate processing apparatus, wherein the negative pressure generating means changes the magnitude of the negative pressure generated by changing the pressure or flow rate of the compressed gas . A rinsing treatment step of rinsing the substrate with a rinsing liquid as the treatment liquid;
The substrate processing apparatus according to claim 1, wherein the negative pressure generating unit reduces the generated negative pressure when a predetermined time has elapsed from the start of the rinsing process . Having a drying treatment step of drying the substrate after the liquid treatment;
The substrate processing apparatus according to claim 1, wherein the negative pressure generating unit reduces the magnitude of the negative pressure generated after generating the negative pressure in the drying process . In a substrate processing method for processing a substrate by supplying a processing liquid to a rotating substrate,
When processing the substrate with the processing liquid, the processing liquid supplied to the substrate is recovered by a recovery cup, and flows from the opening at the upper part of the recovery cup to the lower part through the outer edge of the substrate. Forming an air flow, and further generating a negative pressure acting outward of the substrate outside the opening of the recovery cup,
The recovery cup has an annular peripheral wall portion, and an overhang portion that protrudes radially inward from an upper end of the peripheral wall portion to form the opening having a smaller diameter than the peripheral wall portion, and the overhang portion A gas supply port is formed, and the inner surface of the peripheral wall portion and the inner surface of the overhang portion are configured by a concave surface continuous from above the peripheral wall portion to below the overhang portion, and the gas supply The inner surface of the overhanging part connected to the lower part of the mouth is composed of a continuous surface consisting of convex curved parts,
Generating a negative pressure acting toward the outside of the substrate by flowing a compressed gas along the inner wall of the recovery cup from the gas supply port ;
The substrate processing method characterized that you change the size of the negative pressure to be generated by changing the pressure or the flow rate of the compressed gas. 5. A rinsing process for rinsing the substrate with a rinsing liquid as the processing liquid, wherein the negative pressure generated is reduced when a predetermined time has elapsed from the start of the rinsing process. The substrate processing method as described. 5. The method according to claim 4, further comprising a drying process step of drying the substrate after the liquid process, wherein the negative pressure generated after generating the negative pressure in the drying process step is reduced. 5. The substrate processing method according to 5.

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