KR20180022593A - 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 - Google Patents
반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 Download PDFInfo
- Publication number
- KR20180022593A KR20180022593A KR1020170106217A KR20170106217A KR20180022593A KR 20180022593 A KR20180022593 A KR 20180022593A KR 1020170106217 A KR1020170106217 A KR 1020170106217A KR 20170106217 A KR20170106217 A KR 20170106217A KR 20180022593 A KR20180022593 A KR 20180022593A
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- Prior art keywords
- ring
- edge ring
- processing chamber
- sensor
- wear indicator
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title description 5
- 238000012545 processing Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000003628 erosive effect Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 82
- 230000007797 corrosion Effects 0.000 claims description 43
- 238000005260 corrosion Methods 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000012423 maintenance Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 230000003449 preventive effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010146 3D printing Methods 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220051314A KR102497659B1 (ko) | 2016-08-23 | 2022-04-26 | 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662378492P | 2016-08-23 | 2016-08-23 | |
| US62/378,492 | 2016-08-23 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220051314A Division KR102497659B1 (ko) | 2016-08-23 | 2022-04-26 | 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180022593A true KR20180022593A (ko) | 2018-03-06 |
Family
ID=61243362
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170106217A Ceased KR20180022593A (ko) | 2016-08-23 | 2017-08-22 | 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 |
| KR1020220051314A Active KR102497659B1 (ko) | 2016-08-23 | 2022-04-26 | 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220051314A Active KR102497659B1 (ko) | 2016-08-23 | 2022-04-26 | 반도체 프로세스 모듈을 위한 에지 링 또는 프로세스 키트 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20180061696A1 (enExample) |
| JP (1) | JP7227692B2 (enExample) |
| KR (2) | KR20180022593A (enExample) |
| CN (3) | CN208908212U (enExample) |
| TW (3) | TWM602281U (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190141642A (ko) * | 2018-06-13 | 2019-12-24 | 선양 포춘 프리시전 이큅먼트 컴퍼니., 리미티드. | 일종의 반도체 업계에 응용되는 플라즈마를 직접 기입하여 분사하는 기술 |
| KR20210108137A (ko) * | 2020-02-25 | 2021-09-02 | 에스케이하이닉스 주식회사 | 에지링 모니터링 장치, 에지링 관리 시스템 및 방법 |
| US11264291B2 (en) | 2019-06-26 | 2022-03-01 | Samsung Electronics Co., Ltd. | Sensor device and etching apparatus having the same |
| KR20230015807A (ko) | 2021-07-23 | 2023-01-31 | 한국표준과학연구원 | 플라즈마 진단기능 및 유전체 두께 측정기능을 갖는 센서, 이를 구비하는 공정장치 및 공정시스템 |
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| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
| KR102689380B1 (ko) | 2016-01-26 | 2024-07-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 에지 링 리프팅 솔루션 |
| US10177018B2 (en) | 2016-08-11 | 2019-01-08 | Applied Materials, Inc. | Process kit erosion and service life prediction |
| US20180061696A1 (en) * | 2016-08-23 | 2018-03-01 | Applied Materials, Inc. | Edge ring or process kit for semiconductor process module |
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| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| JP7033441B2 (ja) * | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11538713B2 (en) * | 2017-12-05 | 2022-12-27 | Lam Research Corporation | System and method for edge ring wear compensation |
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| US11393663B2 (en) * | 2019-02-25 | 2022-07-19 | Tokyo Electron Limited | Methods and systems for focus ring thickness determinations and feedback control |
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| CN113607714B (zh) * | 2021-10-08 | 2022-01-11 | 成都齐碳科技有限公司 | 分子膜成膜或表征器件、装置、方法以及生物芯片 |
| JP7305076B1 (ja) * | 2022-09-01 | 2023-07-07 | 三菱電機株式会社 | データ収集分析システム、測定データ収集ユニット、および、データ収集分析方法 |
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- 2017-08-16 US US15/679,040 patent/US20180061696A1/en not_active Abandoned
- 2017-08-22 KR KR1020170106217A patent/KR20180022593A/ko not_active Ceased
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- 2017-08-23 JP JP2017159933A patent/JP7227692B2/ja active Active
- 2017-08-23 TW TW106128580A patent/TW201818446A/zh unknown
- 2017-08-23 CN CN201710729052.6A patent/CN107768225A/zh active Pending
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- 2017-08-23 TW TW108214825U patent/TWM598516U/zh not_active IP Right Cessation
-
2019
- 2019-07-22 US US16/518,940 patent/US20190348317A1/en not_active Abandoned
-
2022
- 2022-04-26 KR KR1020220051314A patent/KR102497659B1/ko active Active
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2023
- 2023-05-24 US US18/201,698 patent/US20230296512A1/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190141642A (ko) * | 2018-06-13 | 2019-12-24 | 선양 포춘 프리시전 이큅먼트 컴퍼니., 리미티드. | 일종의 반도체 업계에 응용되는 플라즈마를 직접 기입하여 분사하는 기술 |
| US11264291B2 (en) | 2019-06-26 | 2022-03-01 | Samsung Electronics Co., Ltd. | Sensor device and etching apparatus having the same |
| KR20210108137A (ko) * | 2020-02-25 | 2021-09-02 | 에스케이하이닉스 주식회사 | 에지링 모니터링 장치, 에지링 관리 시스템 및 방법 |
| KR20230015807A (ko) | 2021-07-23 | 2023-01-31 | 한국표준과학연구원 | 플라즈마 진단기능 및 유전체 두께 측정기능을 갖는 센서, 이를 구비하는 공정장치 및 공정시스템 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190348317A1 (en) | 2019-11-14 |
| TW201818446A (zh) | 2018-05-16 |
| US20180061696A1 (en) | 2018-03-01 |
| US20230296512A1 (en) | 2023-09-21 |
| JP7227692B2 (ja) | 2023-02-22 |
| TWM602281U (zh) | 2020-10-01 |
| KR102497659B1 (ko) | 2023-02-07 |
| JP2018032857A (ja) | 2018-03-01 |
| TWM598516U (zh) | 2020-07-11 |
| CN107768225A (zh) | 2018-03-06 |
| CN207637742U (zh) | 2018-07-20 |
| KR20220058510A (ko) | 2022-05-09 |
| CN208908212U (zh) | 2019-05-28 |
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