CN208908212U - 等离子体处理腔室及用于等离子体处理腔室的环 - Google Patents

等离子体处理腔室及用于等离子体处理腔室的环 Download PDF

Info

Publication number
CN208908212U
CN208908212U CN201820980309.5U CN201820980309U CN208908212U CN 208908212 U CN208908212 U CN 208908212U CN 201820980309 U CN201820980309 U CN 201820980309U CN 208908212 U CN208908212 U CN 208908212U
Authority
CN
China
Prior art keywords
layer
ring
side ring
processing chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201820980309.5U
Other languages
English (en)
Chinese (zh)
Inventor
艾伦·L·丹布拉
舍什拉伊·L·图尔什巴瓦勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of CN208908212U publication Critical patent/CN208908212U/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
CN201820980309.5U 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环 Expired - Fee Related CN208908212U (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662378492P 2016-08-23 2016-08-23
US62/378,492 2016-08-23
CN201721058542.XU CN207637742U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201721058542.XU Division CN207637742U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Publications (1)

Publication Number Publication Date
CN208908212U true CN208908212U (zh) 2019-05-28

Family

ID=61243362

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201820980309.5U Expired - Fee Related CN208908212U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环
CN201710729052.6A Pending CN107768225A (zh) 2016-08-23 2017-08-23 用于半导体工艺模块的边环或工艺配件
CN201721058542.XU Expired - Fee Related CN207637742U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201710729052.6A Pending CN107768225A (zh) 2016-08-23 2017-08-23 用于半导体工艺模块的边环或工艺配件
CN201721058542.XU Expired - Fee Related CN207637742U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Country Status (5)

Country Link
US (3) US20180061696A1 (enExample)
JP (1) JP7227692B2 (enExample)
KR (2) KR20180022593A (enExample)
CN (3) CN208908212U (enExample)
TW (3) TWM602281U (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119013770A (zh) * 2022-10-07 2024-11-22 东京毅力科创株式会社 基片处理系统和边缘环的安装方法

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116110846A (zh) 2016-01-26 2023-05-12 应用材料公司 晶片边缘环升降解决方案
KR102689380B1 (ko) 2016-01-26 2024-07-26 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
US10177018B2 (en) 2016-08-11 2019-01-08 Applied Materials, Inc. Process kit erosion and service life prediction
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
EP3562285A1 (de) * 2018-04-25 2019-10-30 Siemens Aktiengesellschaft Verbinden elektrischer bauelemente
JP7138474B2 (ja) * 2018-05-15 2022-09-16 東京エレクトロン株式会社 部品の修復方法及び基板処理システム
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
JP7045931B2 (ja) * 2018-05-30 2022-04-01 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN108766871A (zh) * 2018-06-13 2018-11-06 沈阳富创精密设备有限公司 一种应用于半导体行业的直接写入等离子喷涂技术
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11521872B2 (en) * 2018-09-04 2022-12-06 Applied Materials, Inc. Method and apparatus for measuring erosion and calibrating position for a moving process kit
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US10903050B2 (en) * 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
US11393663B2 (en) * 2019-02-25 2022-07-19 Tokyo Electron Limited Methods and systems for focus ring thickness determinations and feedback control
KR20210126783A (ko) * 2019-03-06 2021-10-20 램 리써치 코포레이션 기판 프로세싱 시스템을 위한 조정가능한 에지 링의 두께를 측정하기 위한 측정 시스템
JP2020155489A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) * 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
US11479849B2 (en) 2019-06-03 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Physical vapor deposition chamber with target surface morphology monitor
US11913777B2 (en) * 2019-06-11 2024-02-27 Applied Materials, Inc. Detector for process kit ring wear
KR102689653B1 (ko) 2019-06-26 2024-07-31 삼성전자주식회사 센서 모듈 및 이를 구비하는 식각 장치
JP2021040076A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 環状部材、基板処理装置及び基板処理装置の制御方法
JP7394601B2 (ja) 2019-11-28 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置及び測定方法
JP7471810B2 (ja) * 2019-12-13 2024-04-22 東京エレクトロン株式会社 リングアセンブリ、基板支持体及び基板処理装置
CN114830317A (zh) * 2019-12-19 2022-07-29 朗姆研究公司 消耗性室部件中的封装式射频识别
US11668553B2 (en) * 2020-02-14 2023-06-06 Applied Materials Inc. Apparatus and method for controlling edge ring variation
KR102822822B1 (ko) * 2020-02-25 2025-06-19 에스케이하이닉스 주식회사 에지링 모니터링 장치, 에지링 관리 시스템 및 방법
US11915953B2 (en) * 2020-04-17 2024-02-27 Applied Materials, Inc. Apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers
JP7580328B2 (ja) * 2020-06-05 2024-11-11 東京エレクトロン株式会社 プラズマ処理装置
CN111463165B (zh) * 2020-06-18 2020-09-29 中芯集成电路制造(绍兴)有限公司 固定机构、半导体机台及晶圆清洗装置
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
KR102867342B1 (ko) 2020-11-26 2025-10-01 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
DE102020134672A1 (de) * 2020-12-22 2022-06-23 Krones Aktiengesellschaft Verschleißteil, Herstellungsverfahren und Vorrichtung zur Überwachung eines Verschleißzustands
US20220404716A1 (en) * 2021-06-17 2022-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Inspection tool for a semiconductor processing tool and methods of use
KR102632552B1 (ko) 2021-07-23 2024-02-02 한국표준과학연구원 플라즈마 진단기능 및 유전체 두께 측정기능을 갖는 센서, 이를 구비하는 공정장치 및 공정시스템
KR20240051153A (ko) * 2021-08-17 2024-04-19 도쿄엘렉트론가부시키가이샤 반도체 플라즈마 공정 챔버 내의 소모성 부품의 특성을 측정하기 위한 광센서
CN113607714B (zh) * 2021-10-08 2022-01-11 成都齐碳科技有限公司 分子膜成膜或表征器件、装置、方法以及生物芯片
JP7305076B1 (ja) * 2022-09-01 2023-07-07 三菱電機株式会社 データ収集分析システム、測定データ収集ユニット、および、データ収集分析方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03148118A (ja) * 1989-11-02 1991-06-24 Fujitsu Ltd 半導体製造装置
JPH05136098A (ja) * 1991-11-15 1993-06-01 Seiko Epson Corp 半導体装置の製造装置及び半導体装置の製造方法
JPH08203865A (ja) * 1995-01-23 1996-08-09 Hitachi Ltd プラズマ処理装置
US6077387A (en) * 1999-02-10 2000-06-20 Stmicroelectronics, Inc. Plasma emission detection for process control via fluorescent relay
TW580735B (en) * 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP4657521B2 (ja) * 2001-08-28 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6806949B2 (en) * 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
US6894769B2 (en) * 2002-12-31 2005-05-17 Tokyo Electron Limited Monitoring erosion of system components by optical emission
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
JP4365226B2 (ja) * 2004-01-14 2009-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置及び方法
US7233878B2 (en) * 2004-01-30 2007-06-19 Tokyo Electron Limited Method and system for monitoring component consumption
JP4006004B2 (ja) * 2004-12-28 2007-11-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US7602116B2 (en) * 2005-01-27 2009-10-13 Advanced Optoelectronic Technology, Inc. Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP2009245988A (ja) * 2008-03-28 2009-10-22 Tokyo Electron Ltd プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
US8740206B2 (en) * 2010-01-27 2014-06-03 Applied Materials, Inc. Life enhancement of ring assembly in semiconductor manufacturing chambers
JP5728770B2 (ja) * 2011-02-03 2015-06-03 株式会社昭和真空 基板処理装置、基板処理方法、ならびに、プログラム
CN103187225B (zh) * 2011-12-28 2015-10-21 中微半导体设备(上海)有限公司 一种可监测刻蚀过程的等离子体处理装置
GB2499816A (en) * 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
CN106030242B (zh) * 2014-02-18 2020-06-19 诺维尔里斯公司 用于对薄层进行非接触式测量的光声装置和方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US10041868B2 (en) * 2015-01-28 2018-08-07 Lam Research Corporation Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber
US10014198B2 (en) * 2015-08-21 2018-07-03 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119013770A (zh) * 2022-10-07 2024-11-22 东京毅力科创株式会社 基片处理系统和边缘环的安装方法
CN119013770B (zh) * 2022-10-07 2025-11-14 东京毅力科创株式会社 基片处理系统和边缘环的安装方法

Also Published As

Publication number Publication date
US20190348317A1 (en) 2019-11-14
TW201818446A (zh) 2018-05-16
US20180061696A1 (en) 2018-03-01
US20230296512A1 (en) 2023-09-21
JP7227692B2 (ja) 2023-02-22
TWM602281U (zh) 2020-10-01
KR102497659B1 (ko) 2023-02-07
JP2018032857A (ja) 2018-03-01
TWM598516U (zh) 2020-07-11
KR20180022593A (ko) 2018-03-06
CN107768225A (zh) 2018-03-06
CN207637742U (zh) 2018-07-20
KR20220058510A (ko) 2022-05-09

Similar Documents

Publication Publication Date Title
CN208908212U (zh) 等离子体处理腔室及用于等离子体处理腔室的环
CN207676882U (zh) 具有零件磨损指示器的腔室部件和等离子体处理腔室
KR102706581B1 (ko) 광학적 진단에 의한 플라즈마 불안정성의 검출을 위한 시스템들 및 방법들
JP6598745B2 (ja) 半導体製造機器内の消耗部品の摩耗検出
US6759253B2 (en) Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
TWI723004B (zh) 用於半導體製造腔室中之可消耗零件的剩餘使用壽命的估計
KR101337754B1 (ko) 조절가능한 높이의 ｐｉｆ 프로브
CN105990194B (zh) 基板处理方法和基板处理装置
CN102037554B (zh) 用于监控静电卡盘边珠材料的侵蚀的电气和光学系统和方法
JP2009245988A (ja) プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
JP2008545237A (ja) プラズマの電気特性のセットを測定するための装置
US20190187003A1 (en) Corrosion-Resistant Temperature Sensor Probe
JP2005236199A (ja) プラズマプロセスのリアルタイムモニタ装置
US20110140712A1 (en) Method of determining application limit of electrostatic chuck
CN110828272B (zh) 腔室内衬、下电极装置和半导体处理设备
CN109727837B (zh) 等离子体设备及等离子体设备监测方法
TWI677895B (zh) 電漿設備及電漿設備監測方法
TWI681435B (zh) 控制基板的加工條件的裝置、加工裝置及處理基板的方法
KR102825249B1 (ko) 모니터링 시스템 및 이에 있어서 공정 파라미터 측정 방법
TW200709321A (en) An apparatus and method for non-contact assessment of a constituent in semiconductor substrates
JP2021064675A (ja) 発光装置の製造方法
CN100481372C (zh) 晶片承载装置
KR19990032606A (ko) 웨이퍼 가장자리 응력 측정장치

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190528