KR20170092465A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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KR20170092465A
KR20170092465A KR1020170014528A KR20170014528A KR20170092465A KR 20170092465 A KR20170092465 A KR 20170092465A KR 1020170014528 A KR1020170014528 A KR 1020170014528A KR 20170014528 A KR20170014528 A KR 20170014528A KR 20170092465 A KR20170092465 A KR 20170092465A
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insulating film
film
gate electrode
silicon nitride
semiconductor substrate
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Korean (ko)
Inventor
마사아끼 시노하라
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20170092465A publication Critical patent/KR20170092465A/ko
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    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020170014528A 2016-02-03 2017-02-01 반도체 장치 및 그 제조 방법 Withdrawn KR20170092465A (ko)

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JPJP-P-2016-018589 2016-02-03
JP2016018589A JP6683488B2 (ja) 2016-02-03 2016-02-03 半導体装置およびその製造方法

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US (2) US9837427B2 (cg-RX-API-DMAC10.html)
JP (1) JP6683488B2 (cg-RX-API-DMAC10.html)
KR (1) KR20170092465A (cg-RX-API-DMAC10.html)
CN (1) CN107039454B (cg-RX-API-DMAC10.html)
TW (1) TW201801253A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20200121487A (ko) * 2019-04-16 2020-10-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
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