KR20160140660A - 반도체 발광 장치 및 광 반도체 실장용 기판 - Google Patents

반도체 발광 장치 및 광 반도체 실장용 기판 Download PDF

Info

Publication number
KR20160140660A
KR20160140660A KR1020167026854A KR20167026854A KR20160140660A KR 20160140660 A KR20160140660 A KR 20160140660A KR 1020167026854 A KR1020167026854 A KR 1020167026854A KR 20167026854 A KR20167026854 A KR 20167026854A KR 20160140660 A KR20160140660 A KR 20160140660A
Authority
KR
South Korea
Prior art keywords
degrees
diffraction
reflector
peak
degree
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020167026854A
Other languages
English (en)
Korean (ko)
Inventor
아키 기무라
가츠야 사카요리
게이 아마가이
사토루 간케
도시유키 사카이
도시마사 다카라베
마코토 미조시리
Original Assignee
다이니폰 인사츠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이니폰 인사츠 가부시키가이샤 filed Critical 다이니폰 인사츠 가부시키가이샤
Publication of KR20160140660A publication Critical patent/KR20160140660A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H01L33/58—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H01L24/97—
    • H01L33/02—
    • H01L33/52—
    • H01L33/60—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H01L2224/92247—
    • H01L2924/12041—
    • H01L2933/0033—
    • H01L2933/0058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
KR1020167026854A 2014-03-31 2015-03-27 반도체 발광 장치 및 광 반도체 실장용 기판 Withdrawn KR20160140660A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2014-074828 2014-03-31
JP2014074828 2014-03-31
JPJP-P-2015-017933 2015-01-30
JP2015017933A JP5920497B2 (ja) 2014-03-31 2015-01-30 半導体発光装置及び光半導体実装用基板
PCT/JP2015/059784 WO2015152097A1 (ja) 2014-03-31 2015-03-27 半導体発光装置及び光半導体実装用基板

Publications (1)

Publication Number Publication Date
KR20160140660A true KR20160140660A (ko) 2016-12-07

Family

ID=54240420

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167026854A Withdrawn KR20160140660A (ko) 2014-03-31 2015-03-27 반도체 발광 장치 및 광 반도체 실장용 기판

Country Status (6)

Country Link
US (1) US10411174B2 (https=)
JP (1) JP5920497B2 (https=)
KR (1) KR20160140660A (https=)
CN (1) CN106133929B (https=)
TW (1) TW201601353A (https=)
WO (1) WO2015152097A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102221601B1 (ko) * 2014-10-17 2021-03-02 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 발광 모듈
US10164159B2 (en) * 2016-12-20 2018-12-25 Samsung Electronics Co., Ltd. Light-emitting diode package and method of manufacturing the same
JP2020055910A (ja) * 2018-09-28 2020-04-09 日亜化学工業株式会社 樹脂組成物、及び発光装置
US12183720B2 (en) * 2019-05-22 2024-12-31 Creeled, Inc. Arrangements for light emitting diode packages
TWI692816B (zh) * 2019-05-22 2020-05-01 友達光電股份有限公司 顯示裝置及其製作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0560707A (ja) 1991-09-02 1993-03-12 Nippon Steel Corp 石炭の膨張性試験方法
WO2011027562A1 (ja) 2009-09-07 2011-03-10 株式会社クラレ Ｌｅｄ用反射板およびそれを備える発光装置
JP2011195709A (ja) 2010-03-19 2011-10-06 Sumitomo Electric Ind Ltd 白色樹脂成形体及びｌｅｄ用リフレクタ
JP2013166926A (ja) 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006070252A (ja) * 2004-08-03 2006-03-16 Mitsui Chemicals Inc ポリ４−メチル−１−ペンテン樹脂組成物、フィルムおよび電子部品封止体製造用型枠
JP5060707B2 (ja) 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
CN101400492B (zh) * 2006-03-20 2012-07-25 三井化学株式会社 光学膜及其制造方法
JP2008144155A (ja) * 2006-11-14 2008-06-26 Mitsui Chemicals Inc ４−メチル−１−ペンテン系ランダム共重合体およびその製造方法ならびに該共重合体を含む組成物
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
WO2012033122A1 (ja) * 2010-09-07 2012-03-15 宇部マテリアルズ株式会社 青色発光蛍光体及び該青色発光蛍光体を用いた発光装置
JP2013077794A (ja) * 2011-09-16 2013-04-25 Sekisui Chem Co Ltd 光半導体装置
JP5970941B2 (ja) * 2012-04-27 2016-08-17 大日本印刷株式会社 光反射積層体及び半導体発光装置
JP2013243294A (ja) * 2012-05-22 2013-12-05 Kaneka Corp 半導体パッケージの製造方法
JP5932494B2 (ja) * 2012-06-01 2016-06-08 日亜化学工業株式会社 発光素子載置用基板及び発光装置
JP2014199285A (ja) * 2013-03-29 2014-10-23 積水化成品工業株式会社 光反射板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0560707A (ja) 1991-09-02 1993-03-12 Nippon Steel Corp 石炭の膨張性試験方法
WO2011027562A1 (ja) 2009-09-07 2011-03-10 株式会社クラレ Ｌｅｄ用反射板およびそれを備える発光装置
JP2011195709A (ja) 2010-03-19 2011-10-06 Sumitomo Electric Ind Ltd 白色樹脂成形体及びｌｅｄ用リフレクタ
JP2013166926A (ja) 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法

Also Published As

Publication number Publication date
US10411174B2 (en) 2019-09-10
JP2015201623A (ja) 2015-11-12
CN106133929B (zh) 2018-10-26
JP5920497B2 (ja) 2016-05-18
WO2015152097A1 (ja) 2015-10-08
CN106133929A (zh) 2016-11-16
US20170207376A1 (en) 2017-07-20
TW201601353A (zh) 2016-01-01

Similar Documents

Publication Publication Date Title
JP6277963B2 (ja) 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP5821316B2 (ja) 半導体発光装置用樹脂パッケージの製造方法及び該半導体発光装置用樹脂パッケージを有してなる半導体発光装置の製造方法
KR20160140660A (ko) 반도체 발광 장치 및 광 반도체 실장용 기판
TWI644957B (zh) Resin composition, reflector, lead frame with reflector, and semiconductor light emitting device
WO2016117471A1 (ja) 樹脂組成物、リフレクター、リフレクター付きリードフレーム及び半導体発光装置
JP2016222761A (ja) 樹脂組成物、リフレクター、リフレクター付きリードフレーム、半導体発光装置、架橋剤用イソシアヌレート化合物、及び架橋剤用グリコールウリル化合物
WO2016117624A1 (ja) 半導体発光装置、反射体形成用樹脂組成物及びリフレクター付きリードフレーム
JP6167603B2 (ja) 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、成形体の製造方法、及び半導体発光装置の製造方法
WO2012039434A1 (ja) 反射材組成物、反射体及び半導体発光装置
JP6277592B2 (ja) リフレクター用電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、成形体の製造方法、及び半導体発光装置の製造方法
JP5168337B2 (ja) 反射材組成物、反射体及び半導体発光装置
JP6102413B2 (ja) 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP6292130B2 (ja) 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP6155929B2 (ja) 半導体発光装置、半導体発光装置用部品及びそれらの製造方法、並びに反射体及びその製造方法
JP2017069348A (ja) 半導体発光装置、光半導体実装用基板及びリフレクター
JP6149457B2 (ja) 光半導体実装用基板、半導体発光装置、及び光半導体実装用基板の製造方法
JP2015023099A (ja) 半導体発光装置の製造方法、成形体の製造方法、電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、およびリフレクター
JP6094412B2 (ja) 半導体発光装置の製造方法、成形体の製造方法、電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、およびリフレクター
WO2016017818A1 (ja) リフレクター及び樹脂組成物
JP2016035010A (ja) 樹脂組成物、リフレクター、リフレクター付きリードフレーム及び半導体発光装置
WO2015152098A1 (ja) 半導体発光装置及び光半導体実装用基板
JP2016036028A (ja) リフレクター、リフレクター付きリードフレーム、半導体発光装置、及び樹脂組成物

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000