KR20160113112A - 퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 - Google Patents

퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 Download PDF

Info

Publication number
KR20160113112A
KR20160113112A KR1020167018661A KR20167018661A KR20160113112A KR 20160113112 A KR20160113112 A KR 20160113112A KR 1020167018661 A KR1020167018661 A KR 1020167018661A KR 20167018661 A KR20167018661 A KR 20167018661A KR 20160113112 A KR20160113112 A KR 20160113112A
Authority
KR
South Korea
Prior art keywords
led
acid
curable resin
acrylic acid
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020167018661A
Other languages
English (en)
Korean (ko)
Inventor
이싱 양
알렌산드레 티토프
제이크 히보넨
잉 쩡
레이 치엔
폴 에이치. 할러웨이
Original Assignee
나노포토니카, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나노포토니카, 인크. filed Critical 나노포토니카, 인크.
Publication of KR20160113112A publication Critical patent/KR20160113112A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H01L51/502—
    • H01L51/5246—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/831—Aging
    • H01L2251/562—

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020167018661A 2013-12-12 2014-12-10 퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 Ceased KR20160113112A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361915268P 2013-12-12 2013-12-12
US61/915,268 2013-12-12
PCT/US2014/069479 WO2015089145A1 (en) 2013-12-12 2014-12-10 A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode

Publications (1)

Publication Number Publication Date
KR20160113112A true KR20160113112A (ko) 2016-09-28

Family

ID=53371790

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167018661A Ceased KR20160113112A (ko) 2013-12-12 2014-12-10 퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조

Country Status (7)

Country Link
US (1) US9780256B2 (enExample)
EP (1) EP3080848A4 (enExample)
JP (1) JP2016540357A (enExample)
KR (1) KR20160113112A (enExample)
CN (2) CN107148683B (enExample)
TW (1) TWI653768B (enExample)
WO (1) WO2015089145A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10825951B2 (en) 2018-02-12 2020-11-03 Samsung Display Co., Ltd. Display device
US10854836B2 (en) 2018-08-03 2020-12-01 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US12648303B2 (en) 2021-11-30 2026-06-02 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same
CN106098967A (zh) * 2016-07-05 2016-11-09 南昌航空大学 一种量子点发光二极管的电荷注入、传输及复合方法
CN108878618B (zh) * 2017-05-11 2020-03-24 Tcl集团股份有限公司 一种qled器件及其制备方法
KR102389815B1 (ko) 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지
CN109935734A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 发光器件及其制备方法
CN109935738B (zh) * 2017-12-15 2020-08-18 Tcl科技集团股份有限公司 一种qled器件的后处理方法
CN110098338A (zh) 2018-01-31 2019-08-06 昆山工研院新型平板显示技术中心有限公司 一种量子点发光二极管qled器件及其制作方法、装置
CN110165063A (zh) * 2019-05-27 2019-08-23 深圳市华星光电技术有限公司 量子棒发光二极管器件
CN114695734A (zh) * 2020-12-31 2022-07-01 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
US12550498B2 (en) 2022-07-11 2026-02-10 Samsung Display Co., Ltd. Light emitting device and display device including the same
CN120021385B (zh) * 2023-11-20 2026-07-07 云谷（固安）科技有限公司 显示面板及其制备方法、显示装置
CN121241695A (zh) * 2024-04-29 2025-12-30 京东方科技集团股份有限公司 发光器件及其制备方法、显示面板

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
JP2005272516A (ja) * 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
EP1812335A4 (en) 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US8941293B2 (en) 2006-05-11 2015-01-27 Samsung Electronics Co., Ltd. Solid state lighting devices comprising quantum dots
KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
US8361823B2 (en) * 2007-06-29 2013-01-29 Eastman Kodak Company Light-emitting nanocomposite particles
US7777233B2 (en) 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
WO2009148131A1 (ja) 2008-06-06 2009-12-10 住友ベークライト株式会社 波長変換組成物及び波長変換組成物からなる層を備えた光起電装置
DE102008060113A1 (de) * 2008-12-03 2010-07-29 Tesa Se Verfahren zur Kapselung einer elektronischen Anordnung
WO2011005859A2 (en) 2009-07-07 2011-01-13 University Of Florida Research Foundation, Inc. Stable and all solution processable quantum dot light-emitting diodes
WO2011088159A1 (en) 2010-01-15 2011-07-21 Eastman Kodak Company Optoelectronic device containing large-sized emitting colloidal nanocrystals
WO2011148791A1 (ja) * 2010-05-24 2011-12-01 株式会社 村田製作所 発光素子、及び発光素子の製造方法、並びに表示装置
KR101156096B1 (ko) * 2010-07-20 2012-06-20 엘지이노텍 주식회사 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
WO2012112899A1 (en) * 2011-02-17 2012-08-23 Vanderbilt University Enhancement of light emission quantum yield in treated broad spectrum nanocrystals
WO2013001687A1 (ja) * 2011-06-30 2013-01-03 パナソニック株式会社 発光装置
KR20130043294A (ko) 2011-10-20 2013-04-30 엘지디스플레이 주식회사 Ｌｅｄ 패키지 및 이의 제조 방법
KR101686572B1 (ko) * 2011-10-21 2016-12-15 삼성전자 주식회사 발광 소자
JP6168050B2 (ja) * 2012-04-20 2017-07-26 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
ES2733319T3 (es) * 2012-05-16 2019-11-28 Borealis Ag Lámina polimérica
CN103030822B (zh) * 2012-12-20 2014-09-24 纳晶科技股份有限公司 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具
CN103102075B (zh) * 2013-01-21 2015-05-06 京东方科技集团股份有限公司 一种采用玻璃料进行密封的方法、装置及玻璃料
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10825951B2 (en) 2018-02-12 2020-11-03 Samsung Display Co., Ltd. Display device
US10854836B2 (en) 2018-08-03 2020-12-01 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US11450826B2 (en) 2018-08-03 2022-09-20 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US11963376B2 (en) 2018-08-03 2024-04-16 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US12648303B2 (en) 2021-11-30 2026-06-02 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
US20160315217A1 (en) 2016-10-27
TWI653768B (zh) 2019-03-11
WO2015089145A1 (en) 2015-06-18
CN110611038A (zh) 2019-12-24
US9780256B2 (en) 2017-10-03
EP3080848A4 (en) 2017-11-29
CN107148683B (zh) 2019-08-30
EP3080848A1 (en) 2016-10-19
TW201539781A (zh) 2015-10-16
CN107148683A (zh) 2017-09-08
JP2016540357A (ja) 2016-12-22

Similar Documents

Publication Publication Date Title
CN107148683B (zh) 提升量子点发光二极管的正老化效应和稳定性的方法和结构
Feng et al. Nucleophilic Reaction‐Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light‐Emitting Diodes With Efficiency Exceeding 26%
Ji et al. Halide perovskite light‐emitting diode technologies
Shen et al. Interfacial “anchoring effect” enables efficient large‐area sky‐blue perovskite light‐emitting diodes
US10319878B2 (en) Stratified quantum dot phosphor structure
TWI334660B (en) Surface mount type light emitting diode package device and light emitting element package device
Zheng et al. Optical performance enhancement for chip-on-board packaging LEDs by adding TiO 2/silicone encapsulation layer
EP2530751A1 (en) Led-packaging resin body, led device, and method for manufacturing led device
JP2016540357A5 (enExample)
JP6855245B2 (ja) 蛍光体充填ｌｅｄパッケージ
CN101649114B (zh) 含纳米ZnO量子点的硅树脂复合材料及其制法和用途
JP2015224339A (ja) 蛍光体、その製造方法及び発光装置
CN108630738A (zh) 显示面板、装置及显示面板的制备方法
WO2015004711A1 (ja) 半導体を利用した発光デバイス
KR101568707B1 (ko) 양자점 포함 실리카입자가 포함된 발광고분자필름을 포함하는 백색 led 소자 및 그 제조방법
US8232563B2 (en) Light-emitting device
CN103563107A (zh) 发光装置
JP5304905B2 (ja) 発光装置
KR102034575B1 (ko) 인광체의 도포 전 및 후의 발광 장치들에 대한 싱귤레이션
CN205211789U (zh) 一种基于无镉量子点荧光粉的白光led器件
KR101348473B1 (ko) 버클구조를 갖는 유연성 유기 전계 발광소자 및 그 제조방법
CN107180905B (zh) 基于蓝光芯片激发荧光粉的红外led灯及其制备方法
CN104716249A (zh) 发光装置及波长转换层的制作方法
CN206194789U (zh) 一种芯片级封装led
Tung et al. CaO: Tb 3+ green-emitting phosphor for white light-emitted diode-phosphor applications: the improvement of light output intensity

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000