KR20160113112A - 퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 - Google Patents

퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 Download PDF

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KR20160113112A
KR20160113112A KR1020167018661A KR20167018661A KR20160113112A KR 20160113112 A KR20160113112 A KR 20160113112A KR 1020167018661 A KR1020167018661 A KR 1020167018661A KR 20167018661 A KR20167018661 A KR 20167018661A KR 20160113112 A KR20160113112 A KR 20160113112A
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South Korea
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led
acid
curable resin
acrylic acid
stack
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Korean (ko)
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이싱 양
알렌산드레 티토프
제이크 히보넨
잉 쩡
레이 치엔
폴 에이치. 할러웨이
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나노포토니카, 인크.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H01L51/502—
    • H01L51/5246—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/831—Aging
    • H01L2251/562—

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020167018661A 2013-12-12 2014-12-10 퀀텀닷 발광다이오드의 긍정적 효율의 에이징과 안정화를 촉진시키는 방법 및 구조 Ceased KR20160113112A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361915268P 2013-12-12 2013-12-12
US61/915,268 2013-12-12
PCT/US2014/069479 WO2015089145A1 (en) 2013-12-12 2014-12-10 A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode

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KR20160113112A true KR20160113112A (ko) 2016-09-28

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US (1) US9780256B2 (enExample)
EP (1) EP3080848A4 (enExample)
JP (1) JP2016540357A (enExample)
KR (1) KR20160113112A (enExample)
CN (2) CN110611038A (enExample)
TW (1) TWI653768B (enExample)
WO (1) WO2015089145A1 (enExample)

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US10825951B2 (en) 2018-02-12 2020-11-03 Samsung Display Co., Ltd. Display device
US10854836B2 (en) 2018-08-03 2020-12-01 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same

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EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same
CN106098967A (zh) * 2016-07-05 2016-11-09 南昌航空大学 一种量子点发光二极管的电荷注入、传输及复合方法
CN108878618B (zh) * 2017-05-11 2020-03-24 Tcl集团股份有限公司 一种qled器件及其制备方法
KR102389815B1 (ko) 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지
CN109935734A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 发光器件及其制备方法
CN109935738B (zh) * 2017-12-15 2020-08-18 Tcl科技集团股份有限公司 一种qled器件的后处理方法
CN110098338A (zh) * 2018-01-31 2019-08-06 昆山工研院新型平板显示技术中心有限公司 一种量子点发光二极管qled器件及其制作方法、装置
CN110165063A (zh) * 2019-05-27 2019-08-23 深圳市华星光电技术有限公司 量子棒发光二极管器件
WO2025227323A1 (zh) * 2024-04-29 2025-11-06 京东方科技集团股份有限公司 发光器件及其制备方法、显示面板

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JP2005272516A (ja) * 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
EP1812335A4 (en) 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
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KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
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CN103030822B (zh) * 2012-12-20 2014-09-24 纳晶科技股份有限公司 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具
CN103102075B (zh) * 2013-01-21 2015-05-06 京东方科技集团股份有限公司 一种采用玻璃料进行密封的方法、装置及玻璃料
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same

Cited By (4)

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Publication number Priority date Publication date Assignee Title
US10825951B2 (en) 2018-02-12 2020-11-03 Samsung Display Co., Ltd. Display device
US10854836B2 (en) 2018-08-03 2020-12-01 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US11450826B2 (en) 2018-08-03 2022-09-20 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
US11963376B2 (en) 2018-08-03 2024-04-16 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same

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Publication number Publication date
TWI653768B (zh) 2019-03-11
CN107148683A (zh) 2017-09-08
US9780256B2 (en) 2017-10-03
EP3080848A4 (en) 2017-11-29
CN107148683B (zh) 2019-08-30
CN110611038A (zh) 2019-12-24
TW201539781A (zh) 2015-10-16
JP2016540357A (ja) 2016-12-22
US20160315217A1 (en) 2016-10-27
WO2015089145A1 (en) 2015-06-18
EP3080848A1 (en) 2016-10-19

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