TWI511267B - 發光二極體封裝結構及其製造方法 - Google Patents

發光二極體封裝結構及其製造方法 Download PDF

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TWI511267B
TWI511267B TW102134505A TW102134505A TWI511267B TW I511267 B TWI511267 B TW I511267B TW 102134505 A TW102134505 A TW 102134505A TW 102134505 A TW102134505 A TW 102134505A TW I511267 B TWI511267 B TW I511267B
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electrode
light emitting
emitting diode
package structure
substrate
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Hou Te Lin
Fu Hsiang Yeh
Chao Hsiung Chang
Pin Chuan Chen
Lung Hsin Chen
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Advanced Optoelectronic Tech
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    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Description

發光二極體封裝結構及其製造方法
本發明涉及一種發光二極體封裝結構及其製造方法。
相比於傳統之發光源，發光二極體(Light Emitting Diode，LED)具有重量輕、體積小、污染低、壽命長等優點，其作為一種新型之發光源，已經被越來越廣泛地應用。
在一般之發光二極體封裝結構中，通常會設置一齊納二極體(Zener diode)，用於防止突波或靜電造成元件電路受損。然而，傳統之發光二極體封裝結構中，齊納二極體與發光二極體晶片通常是被設置在同一平面上，這樣之設置會造成發光二極體晶片發出之光線容易被齊納二極體吸收，從而減少了發光二極體封裝結構之出光亮度。
有鑑於此，有必要提供一種出光亮度較高之發光二極體封裝結構及其製造方法。
一種發光二極體封裝結構，其包括基板以及設置於該基板上之發光二極體晶片和齊納二極體。所述齊納二極體表面還形成有一反射層。
一種發光二極體封裝結構之製造方法，其包括以下幾個步驟：提供一基板；將一發光二極體晶片設置於基板上；將一齊納二極體設置於基板上；在齊納二極體表面藉由點膠形成一反射層。
上述之發光二極體封裝結構及其製造方法中，因為齊納二極體之表面藉由點膠方式覆蓋一層反射層，該反射層可以對發光二極體芯發出之光線產生反射作用，所以可以大大減少齊納二極體對發光二極體晶片所發出之光線之吸收，從而可以提高發光二極體封裝結構之出光亮度。
100‧‧‧發光二極體封裝結構
10‧‧‧基板
20‧‧‧發光二極體晶片
30‧‧‧齊納二極體
40‧‧‧封裝層
50‧‧‧反射層
11‧‧‧第一電極
12‧‧‧第二電極
13‧‧‧絕緣層
圖1為本發明實施方式中之發光二極體封裝結構之俯視圖。
圖2為圖1中之發光二極體封裝結構之側視圖。
圖3至圖8為本發明實施方式中之發光二極體封裝結構之製造方法之各步驟示意圖。
請參閱圖1以及圖2，本發明實施方式提供之一種發光二極體封裝結構100包括基板10、設置於基板10上之發光二極體晶片20和齊納二極體30以及覆蓋發光二極體晶片20和齊納二極體30之封裝層40。
所述基板10大致呈一矩形之板狀結構，其包括第一電極11、第二電極12以及位於第一電極11和第二電極12之間之絕緣層13。所述 第一電極11和第二電極12相互間隔，所述絕緣層13充填於第一電極11與第二電極12之間之間隙內，用於連接第一電極11與第二電極12並使兩者電絕緣。在本實施方式中，所述第一電極11為p型電極，所述第二電極12為n型電極。
所述發光二極體晶片20設置於第一電極11上，並且藉由導線分別電性連接第一電極11和第二電極12。所述齊納二極體30設置於第二電極12上，並分別電性連接第一電極11和第二電極12。
所述齊納二極體30表面藉由點膠還形成有反射層50，該反射層50覆蓋齊納二極體30，其為矽膠等可固性不透明膠體。在本實施方式中，所述反射層50內還含有反射顆粒TiO2或SiO2。
所述封裝層40形成在基板10之上表面上，並覆蓋發光二極體晶片20、齊納二極體30以及反射層50。所述封裝層40為一透明結構，其材質可為矽、環氧樹脂等。所述封裝層40中還可摻入螢光粉。所述螢光粉材質可選自石榴石(garnet)、矽酸鹽、氮化物、氮氧化物、磷化物、硫化物中之一或幾種組合之化合物。
在本發明之發光二極體封裝結構100中，因為齊納二極體30之表面藉由點膠方式覆蓋一層反射層50，該反射層50可以對發光二極體晶片20發出之光線產生反射作用，所以可以大大減少齊納二極體30對發光二極體晶片20所發出之光線之吸收，從而可以提高發光二極體封裝結構100之出光亮度。
本發明實施方式提供之發光二極體封裝結構100之製造方法包括以下幾個步驟：
步驟一：請參閱圖3以及圖4，提供一基板10。所述基板10包括第 一電極11、第二電極12以及位於第一電極11和第二電極12之間之絕緣層13。所述第一電極11和第二電極12相互間隔，所述絕緣層13充填於第一電極11與第二電極12之間之間隙內，用於連接第一電極11與第二電極12並使兩者電絕緣。
步驟二：請參閱圖5以及圖6，將一發光二極體晶片20設置於基板10之第一電極11上，並且藉由導線分別電性連接第一電極11和第二電極12。
步驟三：將一齊納二極體30設置於基板10之第二電極12上，並分別電性連接第一電極11和第二電極12。
步驟四：請參閱圖7以及圖8，在齊納二極體30表面藉由點膠形成一反射層50。所述反射層50覆蓋齊納二極體30，其為矽膠等可固性不透明膠體。在本實施方式中，所述反射層50內還含有反射顆粒TiO2或SiO2。
步驟五：請接著參閱圖1以及圖2，在所述基板10之上表面上形成一封裝層40。由此完成整個發光二極體封裝結構100之製作。
100‧‧‧發光二極體封裝結構
10‧‧‧基板
20‧‧‧發光二極體晶片
30‧‧‧齊納二極體
40‧‧‧封裝層
50‧‧‧反射層
11‧‧‧第一電極
12‧‧‧第二電極
13‧‧‧絕緣層

Claims (9)

  1. 一種發光二極體封裝結構，其包括基板以及設置於該基板上之發光二極體晶片和齊納二極體，其改進在於：所述齊納二極體表面還形成有一反射層，反射層為可固性不透明膠體，反射層藉由點膠方式形成在齊納二極體表面，並覆蓋齊納二極體。
  2. 如申請專利範圍第1項所述之發光二極體封裝結構，其中：所述基板包括第一電極、第二電極以及位於第一電極和第二電極之間之絕緣層。
  3. 如申請專利範圍第2項所述之發光二極體封裝結構，其中：所述發光二極體晶片設置於第一電極上，並且藉由導線分別電性連接第一電極和第二電極，所述齊納二極體設置於第二電極上，並分別電性連接第一電極和第二電極。
  4. 如申請專利範圍第1項所述之發光二極體封裝結構，其中：所述反射層內還含有反射顆粒TiO2或SiO2。
  5. 如申請專利範圍第1項所述之發光二極體封裝結構，其中：所述發光二極體封裝結構還包括一封裝層，所述封裝層形成在基板之上表面上，並覆蓋發光二極體晶片、齊納二極體以及反射層。
  6. 一種發光二極體封裝結構之製造方法，其包括以下幾個步驟：提供一基板；將一發光二極體晶片設置於基板上；將一齊納二極體設置於基板上；在齊納二極體表面藉由點膠形成一反射層。
  7. 如申請專利範圍第6項所述之發光二極體封裝結構之製造方法，其中：所述基板包括第一電極、第二電極以及位於第一電極和第二電極之間之絕 緣層。
  8. 如申請專利範圍第7項所述之發光二極體封裝結構之製造方法，其中：所述發光二極體晶片設置於第一電極上，並且藉由導線分別電性連接第一電極和第二電極，所述齊納二極體設置於第二電極上，並分別電性連接第一電極和第二電極。
  9. 如申請專利範圍第6項所述之發光二極體封裝結構之製造方法，其中：在齊納二極體表面藉由點膠形成一反射層之步驟之後，還包括在基板之上表面上形成一封裝層之步驟。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203637A (en) * 2010-04-28 2012-01-16 Lg Innotek Co Ltd Light emitting device package
TW201238104A (en) * 2011-03-02 2012-09-16 Seoul Semiconductor Co Ltd Light emitting diode package

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
CN101924099B (zh) * 2009-06-11 2012-03-21 亿光电子工业股份有限公司 发光二极管装置
JP5768435B2 (ja) * 2010-04-16 2015-08-26 日亜化学工業株式会社 発光装置
US8575639B2 (en) * 2011-02-16 2013-11-05 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
KR20130057903A (ko) * 2011-11-24 2013-06-03 엘지이노텍 주식회사 발광소자 패키지
KR102006388B1 (ko) * 2012-11-27 2019-08-01 삼성전자주식회사 발광 소자 패키지

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203637A (en) * 2010-04-28 2012-01-16 Lg Innotek Co Ltd Light emitting device package
TW201238104A (en) * 2011-03-02 2012-09-16 Seoul Semiconductor Co Ltd Light emitting diode package

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