TWI653768B - 用以提昇量子點發光二極體的正效應老化和穩定性的方法和結構 - Google Patents

用以提昇量子點發光二極體的正效應老化和穩定性的方法和結構 Download PDF

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Publication number
TWI653768B
TWI653768B TW103143219A TW103143219A TWI653768B TW I653768 B TWI653768 B TW I653768B TW 103143219 A TW103143219 A TW 103143219A TW 103143219 A TW103143219 A TW 103143219A TW I653768 B TWI653768 B TW I653768B
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Taiwan
Prior art keywords
led
item
acid
quantum dot
patent application
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TW103143219A
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English (en)
Chinese (zh)
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TW201539781A (zh
Inventor
宜興 楊
亞歷山大 季托夫
傑克 許沃寧
英 鄭
利 錢
保羅Ｈ 霍洛韋
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美商納諾光子公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/831—Aging

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
TW103143219A 2013-12-12 2014-12-11 用以提昇量子點發光二極體的正效應老化和穩定性的方法和結構 TWI653768B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361915268P 2013-12-12 2013-12-12
US61/915,268 2013-12-12

Publications (2)

Publication Number Publication Date
TW201539781A TW201539781A (zh) 2015-10-16
TWI653768B true TWI653768B (zh) 2019-03-11

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TW103143219A TWI653768B (zh) 2013-12-12 2014-12-11 用以提昇量子點發光二極體的正效應老化和穩定性的方法和結構

Country Status (7)

Country Link
US (1) US9780256B2 (enExample)
EP (1) EP3080848A4 (enExample)
JP (1) JP2016540357A (enExample)
KR (1) KR20160113112A (enExample)
CN (2) CN110611038A (enExample)
TW (1) TWI653768B (enExample)
WO (1) WO2015089145A1 (enExample)

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KR102389815B1 (ko) 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지
CN109935734A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 发光器件及其制备方法
CN109935738B (zh) * 2017-12-15 2020-08-18 Tcl科技集团股份有限公司 一种qled器件的后处理方法
CN110098338A (zh) * 2018-01-31 2019-08-06 昆山工研院新型平板显示技术中心有限公司 一种量子点发光二极管qled器件及其制作方法、装置
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Also Published As

Publication number Publication date
CN107148683A (zh) 2017-09-08
US9780256B2 (en) 2017-10-03
KR20160113112A (ko) 2016-09-28
EP3080848A4 (en) 2017-11-29
CN107148683B (zh) 2019-08-30
CN110611038A (zh) 2019-12-24
TW201539781A (zh) 2015-10-16
JP2016540357A (ja) 2016-12-22
US20160315217A1 (en) 2016-10-27
WO2015089145A1 (en) 2015-06-18
EP3080848A1 (en) 2016-10-19

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