JP2016540357A - 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造 - Google Patents

量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造 Download PDF

Info

Publication number
JP2016540357A
JP2016540357A JP2016538564A JP2016538564A JP2016540357A JP 2016540357 A JP2016540357 A JP 2016540357A JP 2016538564 A JP2016538564 A JP 2016538564A JP 2016538564 A JP2016538564 A JP 2016538564A JP 2016540357 A JP2016540357 A JP 2016540357A
Authority
JP
Japan
Prior art keywords
led
acid
quantum dot
curable resin
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016538564A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016540357A5 (enExample
Inventor
ヤン，イーシン
ティトフ，アレキサンダー
ヒボネン，ジェイク
ツェン，イン
クィアン，レイ
ホロウェイ，ポール，エイチ．
Original Assignee
ナノフォトニカ，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ナノフォトニカ，インコーポレイテッド filed Critical ナノフォトニカ，インコーポレイテッド
Publication of JP2016540357A publication Critical patent/JP2016540357A/ja
Publication of JP2016540357A5 publication Critical patent/JP2016540357A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/831—Aging

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
JP2016538564A 2013-12-12 2014-12-10 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造 Pending JP2016540357A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361915268P 2013-12-12 2013-12-12
US61/915,268 2013-12-12
PCT/US2014/069479 WO2015089145A1 (en) 2013-12-12 2014-12-10 A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode

Publications (2)

Publication Number Publication Date
JP2016540357A true JP2016540357A (ja) 2016-12-22
JP2016540357A5 JP2016540357A5 (enExample) 2018-01-25

Family

ID=53371790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016538564A Pending JP2016540357A (ja) 2013-12-12 2014-12-10 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造

Country Status (7)

Country Link
US (1) US9780256B2 (enExample)
EP (1) EP3080848A4 (enExample)
JP (1) JP2016540357A (enExample)
KR (1) KR20160113112A (enExample)
CN (2) CN110611038A (enExample)
TW (1) TWI653768B (enExample)
WO (1) WO2015089145A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same
CN106098967A (zh) * 2016-07-05 2016-11-09 南昌航空大学 一种量子点发光二极管的电荷注入、传输及复合方法
CN108878618B (zh) * 2017-05-11 2020-03-24 Tcl集团股份有限公司 一种qled器件及其制备方法
KR102389815B1 (ko) 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지
CN109935734A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 发光器件及其制备方法
CN109935738B (zh) * 2017-12-15 2020-08-18 Tcl科技集团股份有限公司 一种qled器件的后处理方法
CN110098338A (zh) * 2018-01-31 2019-08-06 昆山工研院新型平板显示技术中心有限公司 一种量子点发光二极管qled器件及其制作方法、装置
KR102582649B1 (ko) 2018-02-12 2023-09-25 삼성디스플레이 주식회사 표시 장치
EP3605622B1 (en) 2018-08-03 2021-04-28 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
CN110165063A (zh) * 2019-05-27 2019-08-23 深圳市华星光电技术有限公司 量子棒发光二极管器件
WO2025227323A1 (zh) * 2024-04-29 2025-11-06 京东方科技集团股份有限公司 发光器件及其制备方法、显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005272516A (ja) * 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
JP2010532409A (ja) * 2007-06-29 2010-10-07 イーストマン コダック カンパニー 発光ナノ複合粒子
WO2012112899A1 (en) * 2011-02-17 2012-08-23 Vanderbilt University Enhancement of light emission quantum yield in treated broad spectrum nanocrystals
WO2013157495A1 (ja) * 2012-04-20 2013-10-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
EP1812335A4 (en) 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US8941293B2 (en) 2006-05-11 2015-01-27 Samsung Electronics Co., Ltd. Solid state lighting devices comprising quantum dots
KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
US7777233B2 (en) 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
WO2009148131A1 (ja) * 2008-06-06 2009-12-10 住友ベークライト株式会社 波長変換組成物及び波長変換組成物からなる層を備えた光起電装置
DE102008060113A1 (de) * 2008-12-03 2010-07-29 Tesa Se Verfahren zur Kapselung einer elektronischen Anordnung
WO2011005859A2 (en) 2009-07-07 2011-01-13 University Of Florida Research Foundation, Inc. Stable and all solution processable quantum dot light-emitting diodes
WO2011088159A1 (en) 2010-01-15 2011-07-21 Eastman Kodak Company Optoelectronic device containing large-sized emitting colloidal nanocrystals
JP5446056B2 (ja) * 2010-05-24 2014-03-19 株式会社村田製作所 発光素子、及び発光素子の製造方法、並びに表示装置
KR101156096B1 (ko) * 2010-07-20 2012-06-20 엘지이노텍 주식회사 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
CN103650183B (zh) * 2011-06-30 2017-02-22 松下知识产权经营株式会社 发光装置
KR20130043294A (ko) * 2011-10-20 2013-04-30 엘지디스플레이 주식회사 Ｌｅｄ 패키지 및 이의 제조 방법
KR101686572B1 (ko) * 2011-10-21 2016-12-15 삼성전자 주식회사 발광 소자
US20150129018A1 (en) * 2012-05-16 2015-05-14 Novopolymers N.V. Multilayer encapsulated film for photovoltaic modules
CN103030822B (zh) * 2012-12-20 2014-09-24 纳晶科技股份有限公司 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具
CN103102075B (zh) * 2013-01-21 2015-05-06 京东方科技集团股份有限公司 一种采用玻璃料进行密封的方法、装置及玻璃料
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005272516A (ja) * 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
JP2010532409A (ja) * 2007-06-29 2010-10-07 イーストマン コダック カンパニー 発光ナノ複合粒子
WO2012112899A1 (en) * 2011-02-17 2012-08-23 Vanderbilt University Enhancement of light emission quantum yield in treated broad spectrum nanocrystals
WO2013157495A1 (ja) * 2012-04-20 2013-10-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法

Also Published As

Publication number Publication date
TWI653768B (zh) 2019-03-11
CN107148683A (zh) 2017-09-08
US9780256B2 (en) 2017-10-03
KR20160113112A (ko) 2016-09-28
EP3080848A4 (en) 2017-11-29
CN107148683B (zh) 2019-08-30
CN110611038A (zh) 2019-12-24
TW201539781A (zh) 2015-10-16
US20160315217A1 (en) 2016-10-27
WO2015089145A1 (en) 2015-06-18
EP3080848A1 (en) 2016-10-19

Similar Documents

Publication Publication Date Title
JP2016540357A (ja) 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造
Feng et al. Nucleophilic Reaction‐Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light‐Emitting Diodes with Efficiency Exceeding 26%
JP2016540357A5 (enExample)
KR101370254B1 (ko) 유기전자소자용 기판의 제조방법
US10319878B2 (en) Stratified quantum dot phosphor structure
CN101647316B (zh) 面发光体
WO2015188486A1 (zh) 有机发光器件及其制备方法和有机发光显示装置
CN109545996A (zh) 一种量子点发光二极管及制备方法
KR20080068526A (ko) 파장 변환 구조 및 그의 제조방법과 용도
CN107833976A (zh) Qled器件的制作方法及qled器件
KR101353434B1 (ko) 유기전자소자용 기판
TW201312805A (zh) 半導體發光裝置的光學元件、封裝結構與封裝方法
KR20140026647A (ko) 광전자 부품을 위한 캡슐화 구조물 및 광전자 부품을 캡슐화하는 방법
CN108630738B (zh) 显示面板、装置及显示面板的制备方法
US8232563B2 (en) Light-emitting device
Dang et al. In Situ Fabrication of Mn‐Doped 2D Perovskite‐Polymer Phosphor Films with Green‐Red Dual Emissions for Yellow Lighting
KR101021030B1 (ko) 형광체 코팅방법, 발광장치 제조방법 및 코팅된 형광체
CN103586183A (zh) Uv胶固化方法及oled封装方法
JP2008124168A (ja) 半導体発光装置
KR20130111482A (ko) 유기전자소자용 기판
CN104119887B (zh) 一种注入稀土元素的白光发射氮化铝材料、制备方法及应用
JP2011049234A (ja) 有機ｅｌ発光素子
CN109935738B (zh) 一种qled器件的后处理方法
CN107180905B (zh) 基于蓝光芯片激发荧光粉的红外led灯及其制备方法
JP6603614B2 (ja) 乾燥剤組成物、封止構造、及び有機ｅｌ素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171208

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181113

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190206

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190410

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190426

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191001

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20191220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200401

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200526