CN110611038A - 提升量子点发光二极管的正老化效应和稳定性的方法和结构 - Google Patents
提升量子点发光二极管的正老化效应和稳定性的方法和结构 Download PDFInfo
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- CN110611038A CN110611038A CN201910725953.7A CN201910725953A CN110611038A CN 110611038 A CN110611038 A CN 110611038A CN 201910725953 A CN201910725953 A CN 201910725953A CN 110611038 A CN110611038 A CN 110611038A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/831—Aging
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361915268P | 2013-12-12 | 2013-12-12 | |
| US61/915,268 | 2013-12-12 | ||
| CN201480072787.0A CN107148683B (zh) | 2013-12-12 | 2014-12-10 | 提升量子点发光二极管的正老化效应和稳定性的方法和结构 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480072787.0A Division CN107148683B (zh) | 2013-12-12 | 2014-12-10 | 提升量子点发光二极管的正老化效应和稳定性的方法和结构 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110611038A true CN110611038A (zh) | 2019-12-24 |
Family
ID=53371790
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910725953.7A Pending CN110611038A (zh) | 2013-12-12 | 2014-12-10 | 提升量子点发光二极管的正老化效应和稳定性的方法和结构 |
| CN201480072787.0A Expired - Fee Related CN107148683B (zh) | 2013-12-12 | 2014-12-10 | 提升量子点发光二极管的正老化效应和稳定性的方法和结构 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480072787.0A Expired - Fee Related CN107148683B (zh) | 2013-12-12 | 2014-12-10 | 提升量子点发光二极管的正老化效应和稳定性的方法和结构 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9780256B2 (enExample) |
| EP (1) | EP3080848A4 (enExample) |
| JP (1) | JP2016540357A (enExample) |
| KR (1) | KR20160113112A (enExample) |
| CN (2) | CN110611038A (enExample) |
| TW (1) | TWI653768B (enExample) |
| WO (1) | WO2015089145A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160102394A (ko) | 2013-10-17 | 2016-08-30 | 나노포토니카, 인크. | 빛 방출을 위한 양자점 및 이의 합성방법 |
| CN106098967A (zh) * | 2016-07-05 | 2016-11-09 | 南昌航空大学 | 一种量子点发光二极管的电荷注入、传输及复合方法 |
| CN108878618B (zh) | 2017-05-11 | 2020-03-24 | Tcl集团股份有限公司 | 一种qled器件及其制备方法 |
| KR102389815B1 (ko) | 2017-06-05 | 2022-04-22 | 삼성전자주식회사 | 양자점 유리셀 및 이를 포함하는 발광소자 패키지 |
| CN109935734A (zh) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | 发光器件及其制备方法 |
| CN109935738B (zh) * | 2017-12-15 | 2020-08-18 | Tcl科技集团股份有限公司 | 一种qled器件的后处理方法 |
| CN110098338A (zh) * | 2018-01-31 | 2019-08-06 | 昆山工研院新型平板显示技术中心有限公司 | 一种量子点发光二极管qled器件及其制作方法、装置 |
| KR102582649B1 (ko) | 2018-02-12 | 2023-09-25 | 삼성디스플레이 주식회사 | 표시 장치 |
| EP3605622B1 (en) | 2018-08-03 | 2021-04-28 | Samsung Electronics Co., Ltd. | Light emitting device, method of manufacturing same and display device including same |
| CN110165063A (zh) * | 2019-05-27 | 2019-08-23 | 深圳市华星光电技术有限公司 | 量子棒发光二极管器件 |
| WO2025227323A1 (zh) * | 2024-04-29 | 2025-11-06 | 京东方科技集团股份有限公司 | 发光器件及其制备方法、显示面板 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101690401A (zh) * | 2007-06-29 | 2010-03-31 | 伊斯曼柯达公司 | 发光纳米复合颗粒 |
| CN103030822A (zh) * | 2012-12-20 | 2013-04-10 | 杭州纳晶科技有限公司 | 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具 |
| US20130099212A1 (en) * | 2011-10-21 | 2013-04-25 | Samsung Electronics Co. Ltd. | Light emitting diode |
| WO2013157495A1 (ja) * | 2012-04-20 | 2013-10-24 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
| US6576291B2 (en) | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
| JP2005272516A (ja) * | 2004-03-23 | 2005-10-06 | Sumitomo Osaka Cement Co Ltd | 化合物半導体超微粒子の製造方法 |
| EP1812335A4 (en) | 2004-11-19 | 2009-07-01 | Agency Science Tech & Res | PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS |
| WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
| US8941293B2 (en) | 2006-05-11 | 2015-01-27 | Samsung Electronics Co., Ltd. | Solid state lighting devices comprising quantum dots |
| KR100817853B1 (ko) | 2006-09-25 | 2008-03-31 | 재단법인서울대학교산학협력재단 | 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법 |
| US7777233B2 (en) | 2007-10-30 | 2010-08-17 | Eastman Kodak Company | Device containing non-blinking quantum dots |
| JPWO2009148131A1 (ja) | 2008-06-06 | 2011-11-04 | 住友ベークライト株式会社 | 波長変換組成物及び波長変換組成物からなる層を備えた光起電装置 |
| DE102008060113A1 (de) * | 2008-12-03 | 2010-07-29 | Tesa Se | Verfahren zur Kapselung einer elektronischen Anordnung |
| CN102473800B (zh) | 2009-07-07 | 2015-09-23 | 佛罗里达大学研究基金会公司 | 稳定的且所有溶液可加工的量子点发光二极管 |
| WO2011088159A1 (en) | 2010-01-15 | 2011-07-21 | Eastman Kodak Company | Optoelectronic device containing large-sized emitting colloidal nanocrystals |
| JP5446056B2 (ja) * | 2010-05-24 | 2014-03-19 | 株式会社村田製作所 | 発光素子、及び発光素子の製造方法、並びに表示装置 |
| KR101156096B1 (ko) * | 2010-07-20 | 2012-06-20 | 엘지이노텍 주식회사 | 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법 |
| US10158057B2 (en) * | 2010-10-28 | 2018-12-18 | Corning Incorporated | LED lighting devices |
| US9236572B2 (en) * | 2011-02-17 | 2016-01-12 | Vanderbilt University | Enhancement of light emission quantum yield in treated broad spectrum nanocrystals |
| JP5919504B2 (ja) * | 2011-06-30 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 発光装置 |
| KR20130043294A (ko) | 2011-10-20 | 2013-04-30 | 엘지디스플레이 주식회사 | Led 패키지 및 이의 제조 방법 |
| CN108608703B (zh) * | 2012-05-16 | 2021-03-16 | 北欧化工公司 | 聚合物片材 |
| CN103102075B (zh) * | 2013-01-21 | 2015-05-06 | 京东方科技集团股份有限公司 | 一种采用玻璃料进行密封的方法、装置及玻璃料 |
| KR20160102394A (ko) | 2013-10-17 | 2016-08-30 | 나노포토니카, 인크. | 빛 방출을 위한 양자점 및 이의 합성방법 |
-
2014
- 2014-12-10 EP EP14870470.3A patent/EP3080848A4/en not_active Withdrawn
- 2014-12-10 CN CN201910725953.7A patent/CN110611038A/zh active Pending
- 2014-12-10 JP JP2016538564A patent/JP2016540357A/ja active Pending
- 2014-12-10 CN CN201480072787.0A patent/CN107148683B/zh not_active Expired - Fee Related
- 2014-12-10 WO PCT/US2014/069479 patent/WO2015089145A1/en not_active Ceased
- 2014-12-10 US US15/103,680 patent/US9780256B2/en not_active Expired - Fee Related
- 2014-12-10 KR KR1020167018661A patent/KR20160113112A/ko not_active Ceased
- 2014-12-11 TW TW103143219A patent/TWI653768B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101690401A (zh) * | 2007-06-29 | 2010-03-31 | 伊斯曼柯达公司 | 发光纳米复合颗粒 |
| US20130099212A1 (en) * | 2011-10-21 | 2013-04-25 | Samsung Electronics Co. Ltd. | Light emitting diode |
| WO2013157495A1 (ja) * | 2012-04-20 | 2013-10-24 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法 |
| CN103030822A (zh) * | 2012-12-20 | 2013-04-10 | 杭州纳晶科技有限公司 | 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160315217A1 (en) | 2016-10-27 |
| TWI653768B (zh) | 2019-03-11 |
| WO2015089145A1 (en) | 2015-06-18 |
| EP3080848A4 (en) | 2017-11-29 |
| KR20160113112A (ko) | 2016-09-28 |
| CN107148683A (zh) | 2017-09-08 |
| CN107148683B (zh) | 2019-08-30 |
| TW201539781A (zh) | 2015-10-16 |
| US9780256B2 (en) | 2017-10-03 |
| JP2016540357A (ja) | 2016-12-22 |
| EP3080848A1 (en) | 2016-10-19 |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191224 |
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