JP2016540357A5 - - Google Patents

Download PDF

Info

Publication number
JP2016540357A5
JP2016540357A5 JP2016538564A JP2016538564A JP2016540357A5 JP 2016540357 A5 JP2016540357 A5 JP 2016540357A5 JP 2016538564 A JP2016538564 A JP 2016538564A JP 2016538564 A JP2016538564 A JP 2016538564A JP 2016540357 A5 JP2016540357 A5 JP 2016540357A5
Authority
JP
Japan
Prior art keywords
led
acid
quantum dot
emitting diode
curable resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016538564A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016540357A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/069479 external-priority patent/WO2015089145A1/en
Publication of JP2016540357A publication Critical patent/JP2016540357A/ja
Publication of JP2016540357A5 publication Critical patent/JP2016540357A5/ja
Pending legal-status Critical Current

Links

JP2016538564A 2013-12-12 2014-12-10 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造 Pending JP2016540357A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361915268P 2013-12-12 2013-12-12
US61/915,268 2013-12-12
PCT/US2014/069479 WO2015089145A1 (en) 2013-12-12 2014-12-10 A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode

Publications (2)

Publication Number Publication Date
JP2016540357A JP2016540357A (ja) 2016-12-22
JP2016540357A5 true JP2016540357A5 (enExample) 2018-01-25

Family

ID=53371790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016538564A Pending JP2016540357A (ja) 2013-12-12 2014-12-10 量子ドット発光ダイオードの正の時効および安定化の効率を促進する方法および構造

Country Status (7)

Country Link
US (1) US9780256B2 (enExample)
EP (1) EP3080848A4 (enExample)
JP (1) JP2016540357A (enExample)
KR (1) KR20160113112A (enExample)
CN (2) CN110611038A (enExample)
TW (1) TWI653768B (enExample)
WO (1) WO2015089145A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same
CN106098967A (zh) * 2016-07-05 2016-11-09 南昌航空大学 一种量子点发光二极管的电荷注入、传输及复合方法
CN108878618B (zh) * 2017-05-11 2020-03-24 Tcl集团股份有限公司 一种qled器件及其制备方法
KR102389815B1 (ko) 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지
CN109935734A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 发光器件及其制备方法
CN109935738B (zh) * 2017-12-15 2020-08-18 Tcl科技集团股份有限公司 一种qled器件的后处理方法
CN110098338A (zh) * 2018-01-31 2019-08-06 昆山工研院新型平板显示技术中心有限公司 一种量子点发光二极管qled器件及其制作方法、装置
KR102582649B1 (ko) 2018-02-12 2023-09-25 삼성디스플레이 주식회사 표시 장치
EP3605622B1 (en) 2018-08-03 2021-04-28 Samsung Electronics Co., Ltd. Light emitting device, method of manufacturing same and display device including same
CN110165063A (zh) * 2019-05-27 2019-08-23 深圳市华星光电技术有限公司 量子棒发光二极管器件
WO2025227323A1 (zh) * 2024-04-29 2025-11-06 京东方科技集团股份有限公司 发光器件及其制备方法、显示面板

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
JP2005272516A (ja) * 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
EP1812335A4 (en) 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US8941293B2 (en) 2006-05-11 2015-01-27 Samsung Electronics Co., Ltd. Solid state lighting devices comprising quantum dots
KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
US8361823B2 (en) * 2007-06-29 2013-01-29 Eastman Kodak Company Light-emitting nanocomposite particles
US7777233B2 (en) 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
WO2009148131A1 (ja) * 2008-06-06 2009-12-10 住友ベークライト株式会社 波長変換組成物及び波長変換組成物からなる層を備えた光起電装置
DE102008060113A1 (de) * 2008-12-03 2010-07-29 Tesa Se Verfahren zur Kapselung einer elektronischen Anordnung
WO2011005859A2 (en) 2009-07-07 2011-01-13 University Of Florida Research Foundation, Inc. Stable and all solution processable quantum dot light-emitting diodes
WO2011088159A1 (en) 2010-01-15 2011-07-21 Eastman Kodak Company Optoelectronic device containing large-sized emitting colloidal nanocrystals
JP5446056B2 (ja) * 2010-05-24 2014-03-19 株式会社村田製作所 発光素子、及び発光素子の製造方法、並びに表示装置
KR101156096B1 (ko) * 2010-07-20 2012-06-20 엘지이노텍 주식회사 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
WO2012112899A1 (en) * 2011-02-17 2012-08-23 Vanderbilt University Enhancement of light emission quantum yield in treated broad spectrum nanocrystals
CN103650183B (zh) * 2011-06-30 2017-02-22 松下知识产权经营株式会社 发光装置
KR20130043294A (ko) * 2011-10-20 2013-04-30 엘지디스플레이 주식회사 Led 패키지 및 이의 제조 방법
KR101686572B1 (ko) * 2011-10-21 2016-12-15 삼성전자 주식회사 발광 소자
WO2013157495A1 (ja) * 2012-04-20 2013-10-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
US20150129018A1 (en) * 2012-05-16 2015-05-14 Novopolymers N.V. Multilayer encapsulated film for photovoltaic modules
CN103030822B (zh) * 2012-12-20 2014-09-24 纳晶科技股份有限公司 量子点粉末及其制备方法、硅胶透镜及其制作方法和led 灯具
CN103102075B (zh) * 2013-01-21 2015-05-06 京东方科技集团股份有限公司 一种采用玻璃料进行密封的方法、装置及玻璃料
EP3058598A4 (en) 2013-10-17 2017-03-29 Nanophotonica, Inc. Quantum dot for emitting light and method for synthesizing same

Similar Documents

Publication Publication Date Title
JP2016540357A5 (enExample)
TWI653768B (zh) 用以提昇量子點發光二極體的正效應老化和穩定性的方法和結構
JP2012156148A5 (enExample)
EP4600326A3 (en) Highly efficient oled devices with very short decay times
WO2010129887A3 (en) Light emitting device including semiconductor nanocrystals
JP2012180522A5 (enExample)
JP2009260308A5 (enExample)
JP2011508450A5 (enExample)
US10892385B2 (en) LED fabrication using high-refractive-index adhesives
WO2010046788A3 (de) Strahlungsemittierende vorrichtung
JP2010010591A5 (enExample)
JP2010165672A5 (ja) 発光素子
JP2010235856A5 (enExample)
CN102903735A (zh) 有机电致光二极管显示器及其偏光片贴覆方法
JP2018084829A5 (enExample)
EP2228839A3 (en) Light emitting diode
WO2018120341A1 (zh) 一种oled器件的制备方法
JP2016086173A5 (enExample)
WO2015070104A3 (en) Pled dental matrix system
JP2013535098A5 (enExample)
CN103586183A (zh) Uv胶固化方法及oled封装方法
TWI456012B (zh) 使用脈衝式uv光源之晶圓背面塗覆方法
JP2011116985A5 (enExample)
CN106159060A (zh) 一种led封装工艺
JP2017502468A5 (enExample)