JP2011508450A5 - - Google Patents

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Publication number
JP2011508450A5
JP2011508450A5 JP2010540738A JP2010540738A JP2011508450A5 JP 2011508450 A5 JP2011508450 A5 JP 2011508450A5 JP 2010540738 A JP2010540738 A JP 2010540738A JP 2010540738 A JP2010540738 A JP 2010540738A JP 2011508450 A5 JP2011508450 A5 JP 2011508450A5
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JP
Japan
Prior art keywords
wavelength
peak
array
range
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010540738A
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English (en)
Japanese (ja)
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JP2011508450A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/086060 external-priority patent/WO2009085594A2/en
Publication of JP2011508450A publication Critical patent/JP2011508450A/ja
Publication of JP2011508450A5 publication Critical patent/JP2011508450A5/ja
Pending legal-status Critical Current

Links

JP2010540738A 2007-12-28 2008-12-09 均一な波長の発光を伴う下方変換された光源 Pending JP2011508450A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US942407P 2007-12-28 2007-12-28
PCT/US2008/086060 WO2009085594A2 (en) 2007-12-28 2008-12-09 Down-converted light source with uniform wavelength emission

Publications (2)

Publication Number Publication Date
JP2011508450A JP2011508450A (ja) 2011-03-10
JP2011508450A5 true JP2011508450A5 (enExample) 2012-01-12

Family

ID=40824982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010540738A Pending JP2011508450A (ja) 2007-12-28 2008-12-09 均一な波長の発光を伴う下方変換された光源

Country Status (6)

Country Link
US (1) US8338838B2 (enExample)
EP (1) EP2232596A4 (enExample)
JP (1) JP2011508450A (enExample)
CN (1) CN101911318A (enExample)
TW (1) TW200945630A (enExample)
WO (1) WO2009085594A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110156002A1 (en) * 2008-09-04 2011-06-30 Leatherdale Catherine A Light source having light blocking components
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
WO2013039897A2 (en) * 2011-09-14 2013-03-21 VerLASE TECHNOLOGIES LLC Phosphors for use with leds and other optoelectronic devices
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
US8876312B2 (en) * 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
US9850523B1 (en) 2016-09-30 2017-12-26 Guardant Health, Inc. Methods for multi-resolution analysis of cell-free nucleic acids
ES2840003T3 (es) 2016-09-30 2021-07-06 Guardant Health Inc Métodos para análisis multi-resolución de ácidos nucleicos libres de células
CN107714003A (zh) * 2017-09-30 2018-02-23 天津大学 一种基于柔性pin光电二极管的指端脉搏波检测器
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
DE102018101089A1 (de) 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
DE102019101417A1 (de) * 2019-01-21 2020-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil
US11643693B2 (en) 2019-01-31 2023-05-09 Guardant Health, Inc. Compositions and methods for isolating cell-free DNA
DE102019115351A1 (de) 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN110190515B (zh) * 2019-06-18 2024-01-26 威科赛乐微电子股份有限公司 单颗可变色阵列型vcsel芯片及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072019B2 (ja) * 1994-04-07 2000-07-31 松下電器産業株式会社 結晶成長方法
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
JP4254141B2 (ja) * 2001-07-30 2009-04-15 日亜化学工業株式会社 発光装置
WO2005022654A2 (en) * 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US7462502B2 (en) 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
WO2007034367A1 (en) 2005-09-19 2007-03-29 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
EP2206164A2 (en) 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
JP2011507272A (ja) 2007-12-10 2011-03-03 スリーエム イノベイティブ プロパティズ カンパニー 簡易な光抽出方式の下方変換発光ダイオード

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