TW200945630A - Down-converted light source with uniform wavelength emission - Google Patents
Down-converted light source with uniform wavelength emission Download PDFInfo
- Publication number
- TW200945630A TW200945630A TW097150290A TW97150290A TW200945630A TW 200945630 A TW200945630 A TW 200945630A TW 097150290 A TW097150290 A TW 097150290A TW 97150290 A TW97150290 A TW 97150290A TW 200945630 A TW200945630 A TW 200945630A
- Authority
- TW
- Taiwan
- Prior art keywords
- wavelength
- light
- semiconductor
- peak
- light source
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 238000009826 distribution Methods 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000005286 illumination Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 59
- 238000001228 spectrum Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 238000005086 pumping Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000000872 buffer Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- -1 band gaps Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US942407P | 2007-12-28 | 2007-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200945630A true TW200945630A (en) | 2009-11-01 |
Family
ID=40824982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097150290A TW200945630A (en) | 2007-12-28 | 2008-12-23 | Down-converted light source with uniform wavelength emission |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8338838B2 (enExample) |
| EP (1) | EP2232596A4 (enExample) |
| JP (1) | JP2011508450A (enExample) |
| CN (1) | CN101911318A (enExample) |
| TW (1) | TW200945630A (enExample) |
| WO (1) | WO2009085594A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012502471A (ja) * | 2008-09-04 | 2012-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | 光遮断構成要素を有する光源 |
| DE102011014845B4 (de) * | 2011-03-23 | 2023-05-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils |
| US9035344B2 (en) | 2011-09-14 | 2015-05-19 | VerLASE TECHNOLOGIES LLC | Phosphors for use with LEDs and other optoelectronic devices |
| US8876312B2 (en) * | 2013-03-05 | 2014-11-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Lighting device and apparatus with spectral converter within a casing |
| US8928219B2 (en) | 2013-03-05 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Lighting device with spectral converter |
| US9850523B1 (en) | 2016-09-30 | 2017-12-26 | Guardant Health, Inc. | Methods for multi-resolution analysis of cell-free nucleic acids |
| US20200013482A1 (en) | 2016-09-30 | 2020-01-09 | Guardant Health, Inc. | Methods for multi-resolution analysis of cell-free nucleic acids |
| CN107714003A (zh) * | 2017-09-30 | 2018-02-23 | 天津大学 | 一种基于柔性pin光电二极管的指端脉搏波检测器 |
| DE102017124559B4 (de) * | 2017-10-20 | 2024-05-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements |
| DE102018101089A1 (de) * | 2018-01-18 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
| DE102019101417A1 (de) * | 2019-01-21 | 2020-07-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil |
| ES3013495T3 (en) | 2019-01-31 | 2025-04-14 | Guardant Health Inc | Method for isolating and sequencing cell-free dna |
| DE102019115351A1 (de) | 2019-06-06 | 2020-12-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen |
| CN110190515B (zh) * | 2019-06-18 | 2024-01-26 | 威科赛乐微电子股份有限公司 | 单颗可变色阵列型vcsel芯片及其制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3072019B2 (ja) * | 1994-04-07 | 2000-07-31 | 松下電器産業株式会社 | 結晶成長方法 |
| JPH10270799A (ja) | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | 発光素子 |
| US6404125B1 (en) | 1998-10-21 | 2002-06-11 | Sarnoff Corporation | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| JP2002222989A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
| JP4254141B2 (ja) * | 2001-07-30 | 2009-04-15 | 日亜化学工業株式会社 | 発光装置 |
| WO2005022654A2 (en) * | 2003-08-28 | 2005-03-10 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| JP2005158795A (ja) * | 2003-11-20 | 2005-06-16 | Sumitomo Electric Ind Ltd | 発光ダイオード及び半導体発光装置 |
| US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| JP2007049114A (ja) * | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
| BRPI0616227A2 (pt) * | 2005-09-19 | 2011-06-14 | Koninkl Philips Electronics Nv | dispositivo emissor de luz de cor variÁvel, sistema de iluminaÇço de cor variÁvel, rede de sistema de iluminaÇço de cor variÁvel, conjunto de dispositivo emissor de luz de cor variÁvel, controlador para um sistema de iluminaÇço de cor variÁvel , e , mÉtodo para controlar um dispositivo emissor de luz de cor variÁvel |
| JP2007109792A (ja) | 2005-10-12 | 2007-04-26 | Sony Corp | 半導体発光素子および波長変換基板 |
| US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| US7863634B2 (en) * | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
| JP2010541295A (ja) * | 2007-10-08 | 2010-12-24 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体波長コンバータが接合された発光ダイオード |
| EP2232591A4 (en) * | 2007-12-10 | 2013-12-25 | 3M Innovative Properties Co | Down-converted light emitting diode with simplified light extraction |
-
2008
- 2008-12-09 JP JP2010540738A patent/JP2011508450A/ja active Pending
- 2008-12-09 WO PCT/US2008/086060 patent/WO2009085594A2/en not_active Ceased
- 2008-12-09 CN CN2008801229190A patent/CN101911318A/zh active Pending
- 2008-12-09 US US12/810,052 patent/US8338838B2/en not_active Expired - Fee Related
- 2008-12-09 EP EP08868323A patent/EP2232596A4/en not_active Withdrawn
- 2008-12-23 TW TW097150290A patent/TW200945630A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2232596A4 (en) | 2011-03-02 |
| US20100295057A1 (en) | 2010-11-25 |
| WO2009085594A2 (en) | 2009-07-09 |
| JP2011508450A (ja) | 2011-03-10 |
| EP2232596A2 (en) | 2010-09-29 |
| US8338838B2 (en) | 2012-12-25 |
| CN101911318A (zh) | 2010-12-08 |
| WO2009085594A3 (en) | 2009-09-11 |
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