JP2011508450A - 均一な波長の発光を伴う下方変換された光源 - Google Patents

均一な波長の発光を伴う下方変換された光源 Download PDF

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Publication number
JP2011508450A
JP2011508450A JP2010540738A JP2010540738A JP2011508450A JP 2011508450 A JP2011508450 A JP 2011508450A JP 2010540738 A JP2010540738 A JP 2010540738A JP 2010540738 A JP2010540738 A JP 2010540738A JP 2011508450 A JP2011508450 A JP 2011508450A
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Japan
Prior art keywords
wavelength
light
light source
wavelength converter
semiconductor
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Pending
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JP2010540738A
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English (en)
Japanese (ja)
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JP2011508450A5 (enExample
Inventor
サン，シャオクァン
エー． ハース，マイケル
ジェイ． ミラー，トーマス
エル． スミス，テリー
ダブリュ． ケリー，トミー
エー． レザーデール，キャサリン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2011508450A publication Critical patent/JP2011508450A/ja
Publication of JP2011508450A5 publication Critical patent/JP2011508450A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
JP2010540738A 2007-12-28 2008-12-09 均一な波長の発光を伴う下方変換された光源 Pending JP2011508450A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US942407P 2007-12-28 2007-12-28
PCT/US2008/086060 WO2009085594A2 (en) 2007-12-28 2008-12-09 Down-converted light source with uniform wavelength emission

Publications (2)

Publication Number Publication Date
JP2011508450A true JP2011508450A (ja) 2011-03-10
JP2011508450A5 JP2011508450A5 (enExample) 2012-01-12

Family

ID=40824982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010540738A Pending JP2011508450A (ja) 2007-12-28 2008-12-09 均一な波長の発光を伴う下方変換された光源

Country Status (6)

Country Link
US (1) US8338838B2 (enExample)
EP (1) EP2232596A4 (enExample)
JP (1) JP2011508450A (enExample)
CN (1) CN101911318A (enExample)
TW (1) TW200945630A (enExample)
WO (1) WO2009085594A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014507811A (ja) * 2011-03-23 2014-03-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体部品

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JP2012502471A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 光遮断構成要素を有する光源
US9035344B2 (en) 2011-09-14 2015-05-19 VerLASE TECHNOLOGIES LLC Phosphors for use with LEDs and other optoelectronic devices
US8876312B2 (en) * 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
US9850523B1 (en) 2016-09-30 2017-12-26 Guardant Health, Inc. Methods for multi-resolution analysis of cell-free nucleic acids
US20200013482A1 (en) 2016-09-30 2020-01-09 Guardant Health, Inc. Methods for multi-resolution analysis of cell-free nucleic acids
CN107714003A (zh) * 2017-09-30 2018-02-23 天津大学 一种基于柔性pin光电二极管的指端脉搏波检测器
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
DE102019101417A1 (de) * 2019-01-21 2020-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil
ES3013495T3 (en) 2019-01-31 2025-04-14 Guardant Health Inc Method for isolating and sequencing cell-free dna
DE102019115351A1 (de) 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN110190515B (zh) * 2019-06-18 2024-01-26 威科赛乐微电子股份有限公司 单颗可变色阵列型vcsel芯片及其制造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH07326634A (ja) * 1994-04-07 1995-12-12 Matsushita Electric Ind Co Ltd 結晶成長方法
JP2003115611A (ja) * 2001-07-30 2003-04-18 Nichia Chem Ind Ltd 発光装置
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission

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JPH10270799A (ja) 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
WO2005022654A2 (en) * 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
BRPI0616227A2 (pt) * 2005-09-19 2011-06-14 Koninkl Philips Electronics Nv dispositivo emissor de luz de cor variÁvel, sistema de iluminaÇço de cor variÁvel, rede de sistema de iluminaÇço de cor variÁvel, conjunto de dispositivo emissor de luz de cor variÁvel, controlador para um sistema de iluminaÇço de cor variÁvel , e , mÉtodo para controlar um dispositivo emissor de luz de cor variÁvel
JP2007109792A (ja) 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
JP2010541295A (ja) * 2007-10-08 2010-12-24 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長コンバータが接合された発光ダイオード
EP2232591A4 (en) * 2007-12-10 2013-12-25 3M Innovative Properties Co Down-converted light emitting diode with simplified light extraction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326634A (ja) * 1994-04-07 1995-12-12 Matsushita Electric Ind Co Ltd 結晶成長方法
JP2003115611A (ja) * 2001-07-30 2003-04-18 Nichia Chem Ind Ltd 発光装置
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014507811A (ja) * 2011-03-23 2014-03-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体部品
KR101515319B1 (ko) 2011-03-23 2015-04-24 오스람 옵토 세미컨덕터스 게엠베하 발광 반도체 소자
US9331243B2 (en) 2011-03-23 2016-05-03 Osram Opto Semiconductors Gmbh Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
US9853186B2 (en) 2011-03-23 2017-12-26 Osram Opto Semiconductors Gmbh Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies

Also Published As

Publication number Publication date
EP2232596A4 (en) 2011-03-02
US20100295057A1 (en) 2010-11-25
WO2009085594A2 (en) 2009-07-09
EP2232596A2 (en) 2010-09-29
US8338838B2 (en) 2012-12-25
TW200945630A (en) 2009-11-01
CN101911318A (zh) 2010-12-08
WO2009085594A3 (en) 2009-09-11

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