CN101911318A - 发射均匀波长的下变换光源 - Google Patents

发射均匀波长的下变换光源 Download PDF

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Publication number
CN101911318A
CN101911318A CN2008801229190A CN200880122919A CN101911318A CN 101911318 A CN101911318 A CN 101911318A CN 2008801229190 A CN2008801229190 A CN 2008801229190A CN 200880122919 A CN200880122919 A CN 200880122919A CN 101911318 A CN101911318 A CN 101911318A
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CN
China
Prior art keywords
wavelength
light
light source
led
semiconductor
Prior art date
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Pending
Application number
CN2008801229190A
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English (en)
Chinese (zh)
Inventor
孙晓光
迈克尔·A·哈斯
托马斯·J·米勒
特里·L·史密斯
托米·W·凯利
凯瑟琳·A·莱瑟达勒
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3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101911318A publication Critical patent/CN101911318A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
CN2008801229190A 2007-12-28 2008-12-09 发射均匀波长的下变换光源 Pending CN101911318A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US942407P 2007-12-28 2007-12-28
US61/009,424 2007-12-28
PCT/US2008/086060 WO2009085594A2 (en) 2007-12-28 2008-12-09 Down-converted light source with uniform wavelength emission

Publications (1)

Publication Number Publication Date
CN101911318A true CN101911318A (zh) 2010-12-08

Family

ID=40824982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801229190A Pending CN101911318A (zh) 2007-12-28 2008-12-09 发射均匀波长的下变换光源

Country Status (6)

Country Link
US (1) US8338838B2 (enExample)
EP (1) EP2232596A4 (enExample)
JP (1) JP2011508450A (enExample)
CN (1) CN101911318A (enExample)
TW (1) TW200945630A (enExample)
WO (1) WO2009085594A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103443940A (zh) * 2011-03-23 2013-12-11 欧司朗光电半导体有限公司 发射光的半导体器件
CN107714003A (zh) * 2017-09-30 2018-02-23 天津大学 一种基于柔性pin光电二极管的指端脉搏波检测器
CN110190515A (zh) * 2019-06-18 2019-08-30 威科赛乐微电子股份有限公司 单颗可变色阵列型vcsel芯片及其制造方法

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KR20110048580A (ko) * 2008-09-04 2011-05-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 차단 구성요소를 갖는 광원
US9035344B2 (en) 2011-09-14 2015-05-19 VerLASE TECHNOLOGIES LLC Phosphors for use with LEDs and other optoelectronic devices
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
US8876312B2 (en) * 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
KR20240155386A (ko) 2016-09-30 2024-10-28 가던트 헬쓰, 인크. 무세포 핵산의 다중-해상도 분석 방법
US9850523B1 (en) 2016-09-30 2017-12-26 Guardant Health, Inc. Methods for multi-resolution analysis of cell-free nucleic acids
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
DE102019101417A1 (de) * 2019-01-21 2020-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil
ES3013495T3 (en) 2019-01-31 2025-04-14 Guardant Health Inc Method for isolating and sequencing cell-free dna
DE102019115351A1 (de) 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072019B2 (ja) * 1994-04-07 2000-07-31 松下電器産業株式会社 結晶成長方法
JPH10270799A (ja) 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
JP4254141B2 (ja) * 2001-07-30 2009-04-15 日亜化学工業株式会社 発光装置
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
WO2007034367A1 (en) * 2005-09-19 2007-03-29 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
JP2007109792A (ja) 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
US20100283074A1 (en) * 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103443940A (zh) * 2011-03-23 2013-12-11 欧司朗光电半导体有限公司 发射光的半导体器件
US9331243B2 (en) 2011-03-23 2016-05-03 Osram Opto Semiconductors Gmbh Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
CN103443940B (zh) * 2011-03-23 2017-03-08 欧司朗光电半导体有限公司 发射光的半导体器件
US9853186B2 (en) 2011-03-23 2017-12-26 Osram Opto Semiconductors Gmbh Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
CN107714003A (zh) * 2017-09-30 2018-02-23 天津大学 一种基于柔性pin光电二极管的指端脉搏波检测器
CN110190515A (zh) * 2019-06-18 2019-08-30 威科赛乐微电子股份有限公司 单颗可变色阵列型vcsel芯片及其制造方法
CN110190515B (zh) * 2019-06-18 2024-01-26 威科赛乐微电子股份有限公司 单颗可变色阵列型vcsel芯片及其制造方法

Also Published As

Publication number Publication date
US8338838B2 (en) 2012-12-25
EP2232596A2 (en) 2010-09-29
EP2232596A4 (en) 2011-03-02
JP2011508450A (ja) 2011-03-10
WO2009085594A3 (en) 2009-09-11
WO2009085594A2 (en) 2009-07-09
US20100295057A1 (en) 2010-11-25
TW200945630A (en) 2009-11-01

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Application publication date: 20101208