JP6855245B2 - 蛍光体充填ledパッケージ - Google Patents
蛍光体充填ledパッケージ Download PDFInfo
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- JP6855245B2 JP6855245B2 JP2016556865A JP2016556865A JP6855245B2 JP 6855245 B2 JP6855245 B2 JP 6855245B2 JP 2016556865 A JP2016556865 A JP 2016556865A JP 2016556865 A JP2016556865 A JP 2016556865A JP 6855245 B2 JP6855245 B2 JP 6855245B2
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- silicone
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- 229920001296 polysiloxane Polymers 0.000 claims description 50
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 23
- 230000005484 gravity Effects 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims 3
- 239000013049 sediment Substances 0.000 claims 3
- 230000035945 sensitivity Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 235000006679 Mentha X verticillata Nutrition 0.000 description 2
- 235000002899 Mentha suaveolens Nutrition 0.000 description 2
- 235000001636 Mentha x rotundifolia Nutrition 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- ZHCVSLKFILZSDK-UHFFFAOYSA-I potassium silicon(4+) pentafluoride Chemical compound [F-].[K+].[Si+4].[F-].[F-].[F-].[F-] ZHCVSLKFILZSDK-UHFFFAOYSA-I 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010981 turquoise Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Description
Claims (9)
- 蛍光体充填LEDパッケージであって、
ポリマー材料で形成された外囲器と、
当該外囲器の底に配置されたLEDと、
当該外囲器内に配置された第1の層であって、当該LEDの上に設けられた重力により沈降した蛍光体とシリコーンとのブレンドを含む第1の層であって、当該ブレンドが20%以上の蛍光体/シリコーン重量比を有し、当該ブレンドが少なくともK2SiF6:Mn4+蛍光体材料を含む、第1の層と、
当該外囲器内に配置されたオーバーレイ層であって、シリコーンを含み、当該第1の層の上に設けられ、シリコーンオーバーレイ層が約0.1mm以上の厚さを有し、当該ブレンドにおけるシリコーンと同じ種類のシリコーンで作成されるオーバーレイ層と、
ポリマー材料で形成され、当該外囲器と当該オーバーレイ層の上に配置されたレンズと、
を備えるLEDパッケージ。 - 当該ブレンド中の蛍光体が、水分感受性を呈する、請求項1に記載のLEDパッケージ。
- 当該ブレンドがBSY蛍光体を含む、請求項1または2に記載のLEDパッケージ。
- BSY−PFS蛍光体を使用する、請求項1乃至請求項3のいずれか1項に記載のLEDパッケージ。
- 蛍光体充填LEDパッケージであって、
ポリマー材料で形成された外囲器と、
当該外囲器の底に配置されたLEDと、
当該外囲器内に配置された第1の層であって、当該LEDの上に設けられた重力による沈降した蛍光体とシリコーンとのブレンドを含む第1の層であって、当該ブレンドが20%以上の蛍光体/シリコーン重量比を有し、当該ブレンドが少なくともYAG蛍光体とK2SiF6:Mn4+蛍光体材料を含む、第1の層と、
当該外囲器内に配置されたオーバーレイ層であって、シリコーンを含み、当該第1の層の上に設けられる、当該ブレンドにおけるシリコーンと同じ種類のシリコーンで作成されるオーバーレイ層と、
ポリマー材料で形成され、当該外囲器と当該オーバーレイ層の上に配置されたレンズと、
を備えるLEDパッケージ。 - 当該オーバーレイ層が約0.1mm以上の厚さを有する、請求項5に記載のLEDパッケージ。
- 蛍光体充填LEDパッケージであって、
ポリマー材料で形成された外囲器と、
当該外囲器の底に配置されたLEDと、
当該外囲器内に配置された第1の層であって、当該LEDの上に設けられた重力により沈降した蛍光体とシリコーンとのブレンドを含む第1の層であって、当該ブレンドが20%以上の蛍光体/シリコーン重量比を有し、当該ブレンドが少なくともK2SiF6:Mn4+蛍光体材料を含む、第1の層と、
当該外囲器内に配置されたオーバーレイ層であって、0.1mm以上の厚さを有するシリコーンを含み、当該第1の層の上に設けられる、当該ブレンドにおけるシリコーンと同じ種類のシリコーンで作成されるオーバーレイ層と、
ポリマー材料で形成され、当該外囲器と当該オーバーレイ層の上に配置されたレンズと、
を備えるLEDパッケージ。 - 当該ブレンドが約0.2mmの厚さを有する、請求項1乃至請求項7のいずれか1項に記載のLEDパッケージ。
- 当該オーバーレイ層が0.1〜0.5mmの厚さを有する、請求項1乃至請求項8のいずれか1項に記載のLEDパッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/217,831 | 2014-03-18 | ||
US14/217,831 US9680067B2 (en) | 2014-03-18 | 2014-03-18 | Heavily phosphor loaded LED packages having higher stability |
PCT/US2015/017010 WO2015142478A1 (en) | 2014-03-18 | 2015-02-23 | Heavily phosphor loaded led package |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017511599A JP2017511599A (ja) | 2017-04-20 |
JP2017511599A5 JP2017511599A5 (ja) | 2018-03-22 |
JP6855245B2 true JP6855245B2 (ja) | 2021-04-07 |
Family
ID=52596638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016556865A Active JP6855245B2 (ja) | 2014-03-18 | 2015-02-23 | 蛍光体充填ledパッケージ |
Country Status (10)
Country | Link |
---|---|
US (1) | US9680067B2 (ja) |
EP (2) | EP3120394B1 (ja) |
JP (1) | JP6855245B2 (ja) |
KR (3) | KR20240023202A (ja) |
CN (2) | CN113675322A (ja) |
CA (1) | CA2942044C (ja) |
MX (1) | MX2016012013A (ja) |
MY (1) | MY178038A (ja) |
TW (1) | TWI657600B (ja) |
WO (1) | WO2015142478A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9590148B2 (en) * | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
US9680067B2 (en) | 2014-03-18 | 2017-06-13 | GE Lighting Solutions, LLC | Heavily phosphor loaded LED packages having higher stability |
WO2018160743A1 (en) * | 2017-02-28 | 2018-09-07 | Quarkstar Llc | Lifetime color stabilization of color-shifting artificial light sources |
RU2666578C1 (ru) * | 2017-08-08 | 2018-09-11 | Акционерное общество "Центральный научно-исследовательский институт "Электрон" | Светоизлучающий диод |
JP7002665B2 (ja) | 2018-02-12 | 2022-02-04 | シグニファイ ホールディング ビー ヴィ | フッ化物蛍光体を有するled光源 |
US11056625B2 (en) * | 2018-02-19 | 2021-07-06 | Creeled, Inc. | Clear coating for light emitting device exterior having chemical resistance and related methods |
CN109668062A (zh) * | 2018-12-11 | 2019-04-23 | 业成科技(成都)有限公司 | 发光二极体面光源结构 |
GB2590450B (en) * | 2019-12-18 | 2022-01-05 | Plessey Semiconductors Ltd | Light emitting diode precursor |
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US7497973B2 (en) * | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
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JP5205724B2 (ja) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | 発光装置 |
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2014
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CA2942044C (en) | 2023-01-03 |
EP4332196A2 (en) | 2024-03-06 |
MX2016012013A (es) | 2016-12-05 |
JP2017511599A (ja) | 2017-04-20 |
MY178038A (en) | 2020-09-30 |
CA2942044A1 (en) | 2015-09-24 |
KR20220045236A (ko) | 2022-04-12 |
EP3120394B1 (en) | 2023-12-20 |
US20150270451A1 (en) | 2015-09-24 |
TW201547060A (zh) | 2015-12-16 |
KR20240023202A (ko) | 2024-02-20 |
KR20160133528A (ko) | 2016-11-22 |
EP3120394A1 (en) | 2017-01-25 |
US9680067B2 (en) | 2017-06-13 |
WO2015142478A1 (en) | 2015-09-24 |
CN106463584A (zh) | 2017-02-22 |
TWI657600B (zh) | 2019-04-21 |
CN113675322A (zh) | 2021-11-19 |
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