TW201547060A - 具有較高安定性之高度被磷光體負載的發光二極體封裝物 - Google Patents
具有較高安定性之高度被磷光體負載的發光二極體封裝物 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 239000000203 mixture Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 18
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- 229920002098 polyfluorene Polymers 0.000 claims description 10
- 229920002675 Polyoxyl Polymers 0.000 claims description 7
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 4
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 2
- NIPZNJUMBCMKMC-UHFFFAOYSA-J bismuth;potassium;tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[K+].[Bi+3] NIPZNJUMBCMKMC-UHFFFAOYSA-J 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
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- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
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Abstract
具有較高安定性之高度被磷光體負載的LED封裝物及用於增加高度被磷光體負載的LED封裝物之安定性的方法。使聚矽氧覆層配置於磷光體聚矽氧摻混物層上。
Description
本發明係關於被磷光體負載的發光二極體(LED)。更具體地說,本發明係關於具有較高安定性之高度被磷光體負載的LED封裝物及用於增加該高度被磷光體負載的LED封裝物之安定性的方法。
LED是經常被用作為其他光源(例如白熾燈)之替代物的半導體光發射器。LED特別可用作為在要求分散光線或高度聚集光線之應用上的光源。由LED封裝物產生之光的顏色取決於在該LED封裝物之製造中使用的半導體材料種類與在使用磷光體系統時被使用之磷光體摻混物。
有色半導體LED,其包含發光二極體與雷射(兩者在本案中皆稱為LED),係由第III至V族合金,例如氮化鎵(GaN)製成。對以GaN為基礎之LED而言,所發出的光通常是在電磁光譜的UV至綠光範圍內。
直到最近LED才適合照明應用,因為先前LED產生之固有光顏色不適於需要明亮白光之照明用途。
磷光體將輻射(能量)轉換成可見光。不同磷光體組合提供不同顏色的發光。所產生之可見光的顏色取決於磷光體材料之特定成分。磷光體材料可包含只有一種磷光體組成物或二或多種原色的磷光體,例如和黃色與紅色磷光體之一或多者作特定混合以發出要求之光顏色(色調)。本發明所使用之術語「磷光體」與「磷光體材料」可用來表示一種磷光體組成物以及二或多種磷光體組成物摻混物。
在要求「白」光的典型應用上,將磷光體與LED配合使用以提供要求特性之可接受的淨發射光譜。「白」光典型上被定義為接近在2500K至6000K之相關色溫(CCT)區內的顏色中的黑體軌跡。例如,在典型的照明器具應用上,將由發射在電磁光譜之藍光區的光之InGaN(氮化銦鎵)製成之LED和黃色、綠色、與紅色磷光體配合使用以提供在從約2500K CCT至大於6000K CCT範圍內變動的複合光譜輸出。所得之色溫與國際照明委員會三色圖(CIE tristimulus plot)中的色點取決於發光二極體(diode emitter)之輸出光譜功率與波長、混合比例、對話特性(conversation characteristics)、與磷光體用量。
美國專利第7,497,973號揭示包括半導體光源與含有Mn4+激活之複合磷光體的磷光體材料之LED。特
定磷光體材料是K2[SiF6]:Mn4+(氟化矽鉀或PFS)。
另一種LED使用PFS磷光體與BSY磷光體(藍色偏移的釔鋁石榴石(YAG))組合物。此組合物稱作BSY-PFS且產生白光。使用BSY-PFS組合物之LED封裝物的一個較佳具體實施方式是在本發明中用作為示範性具體實施方式的中功率LED封裝物(<1W)。使用Nichia 757封裝物中的Nichia Mint磷光體(BSY)與GE PFS磷光體製造該封裝物。美國專利第5,998,925與7,026,756號包含在白光LED中的石榴石磷光體之使用。本領域之習知技藝者顯而易知本發明元件的實施不限於Nichia 757。本發明可在一些不同的LED封裝物(其中PFS與BSY磷光體或光譜相似的磷光體配合使用)上實施。
因此,在LED封裝物中磷光體之使用提供了優勢而且是常見的。然而,一般來說,含有PFS磷光體之LED封裝物具有長期色安定性與流明安定性問題。例如,在4000K高CRI(演色性指數)下BSY-PFS系統之色彩要求需要聚矽氧/磷光體盤/模具有很高度磷光體負載。在濕度存在條件下的可靠性試驗中,自通電的LED封裝物所得之可見光輻射發生顏色偏移。隨操作時間流逝,光譜功率分佈中的紅色成分大部分逐漸喪失強度。高度磷光體負載也導致側壁「溝槽」形成與造成淨色點偏移的其他效果。
前述缺點大大地限制了PFS LED(例如BSY-
PFS LED)之實用性。因此,具有使色不安定性問題減輕的LED封裝等級改善將十分有益。
本發明係關於改善使用PFS磷光體之LED封裝物的安定性。通常在該等封裝物中,該磷光體負載如前述地高。在本文中高度負載乃指磷光體對聚矽氧重量比為20%且更高。
在至少一方面,本發明提供具有較高安定性之高度被磷光體負載的LED封裝物。較佳地,LED封裝物是低至中功率LED。一示範性具體實施方式是高度被BSY-PFS磷光體摻混物負載的Nichia 757中功率LED封裝物。磷光體摻混物被聚矽氧覆層覆蓋,該聚矽氧覆層保護磷光體且改善色差。
在另一具體實施方式中,本發明提供一種方法以改善使用PFS磷光體系統之LED封裝物的長期安定性與可靠性。在該方法中,使聚矽氧覆層配置於聚矽氧/磷光體層上面。
10‧‧‧LED封裝物
12‧‧‧晶片
18‧‧‧透鏡
22‧‧‧聚矽氧摻混物層
24‧‧‧箭頭
30‧‧‧外殼
50‧‧‧LED封裝物
52‧‧‧晶片
54‧‧‧聚矽氧摻混物層
56‧‧‧聚矽氧覆層
58‧‧‧透鏡
60‧‧‧外殼
圖1圖示先前技術之LED的示意圖。
圖2圖示具有聚矽氧覆層之LED封裝物。
本發明可以多種成分與成分之配置及以多種工藝操作與工藝操作之配置的形態存在。本發明以附圖方
式被說明,在整個圖式中類似的標號可指示在多個圖式中的對應或相似的元件。圖式僅用來說明較佳具體實施方式而不應將其理解成是對本發明的限制。提出下列圖式之可據以實施的說明,使該領域之具有普通技能者應可顯而易知本發明的新穎方面。
下列詳細說明實質上僅作示範用而無意限制本發明所揭示之應用與用途。而且,也無意藉存在於前面背景或概要或後面詳細說明中的任何理論限制之。儘管本案描述的本發明技術之具體實施方式主要與PFS LED封裝物,尤指Nichia 757 BSY-PFS LED封裝物有關,然而該概念也適用於其他類型之被磷光體負載的LED,尤指其他類型之高度被磷光體負載的LED。具體地說,該概念最適用於高磷光體對聚矽氧重量比(20%且更高)且至少一種磷光體具有環境大氣成分(例如濕度)敏感性的LED封裝物。
圖1顯示示範性先前技術之LED封裝物10。LED封裝物10包含發光二極體(LED)晶片12。磷光體與聚矽氧摻混物層22覆蓋晶片12。用透鏡18包封LED晶片12與磷光體聚矽氧摻混物層22。LED封裝物10包括外殼30。
磷光體聚矽氧摻混物層22以箭頭24所指示之方向與LED晶片12輻射偶合。輻射偶合表示元件互相
關連使得至少部分的從一元件發射的輻射被傳遞到其他元件。
具有較大安定性之高度被磷光體負載的LED封裝物50之一具體實施方式請參見圖2。LED封裝物50包含半導體UV或可見光輻射源,例如發光二極體(LED)晶片52。磷光體與聚矽氧摻混物層54覆蓋晶片52。
LED封裝物50可包括當所發射之輻射被引導到磷光體時能產生白光的任何半導體可見光或UV光源。LED晶片52之較佳峰值發光取決於所使用的磷光體特性且可在從(例如)250至550nm範圍內變動。然而,在一較佳具體實施方式中,LED發光會是在紫光至藍綠光區內且具有在從約420至約500nm範圍內變動之峰值波長。典型上,半導體光源包含摻雜多種雜質的LED。因此,LED可包含半導體二極體,其以任何適當的III-V、II-VI或IV-IV族半導體層為基礎且具有約250至550nm之峰值發光波長。
儘管本案所論述之本發明示範性結構體的通用論述乃針對以無機LED為基礎之光源,然而應當理解LED晶片可被有機發光結構體或其他輻射源替代(除非另外註明)且任何LED晶片或半導體引用僅作為任何合適的輻射源之代表。
磷光體聚矽氧摻混物層54理想地高度被磷光體負載,尤指被20重量%或更大的磷光體負載。磷光體
聚矽氧摻混物層54之厚度通常是約0.2mm。在較佳具體實施方式中,磷光體是PFS磷光體與BSY磷光體或光譜相似的磷光體之摻混物。特佳的具體實施方式是理想地在低至中功率LED封裝物中的Nichia Mint磷光體(BSY)與GE PFS磷光體。一實例是Nichia 757封裝物。
使聚矽氧覆層56配置於磷光體聚矽氧摻混物層54上。聚矽氧覆層之厚度是約0.1mm,理想地是介於約0.1與0.5mm之間。所使用之聚矽氧理想地是與磷光體聚矽氧摻混物層54中的聚矽氧相同的類型。
理想地,在施給聚矽氧/磷光體漿料後立即施加或從摻混物合成產生聚矽氧覆層56,然後同步固化以避免分離。在一較佳具體實施方式中,在使LED封裝物中的聚矽氧磷光體摻混物固化之前,可藉由聚矽氧摻混物中的磷光體之重力沉降而形成聚矽氧保護覆層56。沉降程序可藉由利用離心等裝置來人工產生額外的重力而得到幫助。這重力作用使磷光體聚矽氧摻混物層54自然地沉降到LED晶片52上,且使聚矽氧滲出到LED晶片52上面以形成只有聚矽氧的保護覆層56。
可用透鏡58包封LED晶片52與磷光體聚矽氧摻混物層54。透鏡58可為(例如)環氧樹脂、塑膠、低溫玻璃、聚合物、熱塑性材料、熱固性材料、樹脂、或該領域中已知的其他類型LED包封材料。隨意地,透鏡58是旋塗玻璃或某些具有高折射率之其他材料。在一較佳具體實施方式中,透鏡58是聚合物材料,例如環氧樹
脂、聚矽氧、或聚矽氧環氧樹脂,儘管可使用其他有機或無機包封劑。
對於由LED晶片52與磷光體聚矽氧摻混物材料54產生的光之波長而言,透鏡58較佳是透明的或實質上光穿透性的。在另一具體實施方式中,封裝物50可僅包含包封材料而無外部透鏡。
典型上LED封裝物之外殼60是由高分子複合材料EMC(環氧樹脂可模塑化合物)製成。LED晶片52可被下列支承:例如導線架(未顯示)、自承式電極、外殼60底部、或被安裝於外殼或導線架之軸承架(未顯示)。在外殼60底部表面,LED晶片52電連接電接點。本領域之習知技藝者已知可以有多個晶片存在於LED封裝物中,該多個晶片具有相似的功能屬性。
聚矽氧覆層56業已被量化以使得和沒有聚矽氧覆層的相同封裝物相比,封裝物色差改善了約25%,該色差改善係由於該聚矽氧覆層保護磷光體且與環境成分(例如水)隔離開。
在有與無聚矽氧覆層條件下製作高度被BSY-PFS磷光體負載(聚矽氧:PFS:BSY重量比=49:40:11)的Nichia 757 LED且在受控制的操作條件下作比較。在兩種情形下的磷光體用量相同且使LED驅動與環境條件維持相同。在47℃恆溫室中的LED操作條件是30mA。
下表1顯示相對色差改善。
在操作500小時後的色差改善是34%,以及在操作4000小時後的色差改善是29%。
本領域之習知技藝者可特別地根據前面教示而作出仍舊屬於本發明範圍內的替代具體實施方式、實施例、與修改。而且,應當理解,用來描述本發明的術語是描述性的詞,而非限制性的詞。
本領域之習知技藝者還可以理解在不脫離本發明之範圍與精神的前提下可對前述之較佳與替代具體實施方式作出各式各樣修正與修改。因此,請理解,在隨附申請專利範圍之範圍內,可在本案具體描述之外實施本發明。
50‧‧‧LED封裝物
52‧‧‧晶片
54‧‧‧聚矽氧摻混物層
56‧‧‧聚矽氧覆層
58‧‧‧透鏡
60‧‧‧外殼
Claims (22)
- 一種被磷光體負載的發光二極體(LED)封裝物,其包含:LED;第一層,其包含覆蓋該LED的磷光體與聚矽氧之摻混物,其中該摻混物之磷光體對聚矽氧重量比是至少20%;與含有聚矽氧之覆層。
- 如申請專利範圍第1項之LED封裝物,其中該覆層不包含磷光體。
- 如申請專利範圍第1項之LED封裝物,其中該摻混物中的磷光體具有濕度敏感性。
- 如申請專利範圍第1項之LED封裝物,其中該摻混物包含紅色磷光體與黃色磷光體。
- 如申請專利範圍第1項之LED封裝物,其中該摻混物包含氟化矽鉀(PFS)磷光體。
- 如申請專利範圍第1項之LED封裝物,其中該摻混物包含釔鋁石榴石(YAG)磷光體。
- 如申請專利範圍第1項之LED封裝物,其中該LED封裝物使用BSY(藍色偏移的YAG)-PFS磷光體。
- 如申請專利範圍第1項之LED封裝物,其中該LED封裝物是<1W的低至中功率LED封裝物。
- 如申請專利範圍第1項之LED封裝物,其中該覆層之厚度是約0.1mm或更大。
- 如申請專利範圍第1項之LED封裝物,其中該覆層是用與第一層之摻混物中的聚矽氧相同的聚矽氧製成。
- 如申請專利範圍第1項之LED封裝物,其中該封裝物之色差和沒有覆層的相同封裝物相比改善了至少25%。
- 一種方法,其包含:將含聚矽氧覆層施加於覆蓋LED之第一層上;其中該第一層包含覆蓋該LED之磷光體與聚矽氧的摻混物,其中該摻混物之磷光體對聚矽氧重量比是至少20%。
- 如申請專利範圍第12項之方法,其中該方法使高度被磷光體負載的LED封裝物之安定性增加。
- 如申請專利範圍第12項之方法,其中該摻混物包含PFS磷光體與BSY磷光體,或光譜和PFS與BSY磷光體相似的磷光體。
- 如申請專利範圍第12項之方法,其中該LED封裝物是使用BSY-PFS磷光體的低至中功率LED封裝物。
- 如申請專利範圍第12項之方法,其中該聚矽氧覆層之厚度是約0.1mm或更大。
- 如申請專利範圍第12項之方法,其中該聚矽氧覆層是用與摻混物中的聚矽氧相同的聚矽氧製成。
- 如申請專利範圍第12項之方法,其中該封裝物之色差和沒有聚矽氧覆層的相同封裝物相比改善了至少 25%。
- 如申請專利範圍第12項之方法,其中該聚矽氧覆層被施加於該所形成之第一層。
- 如申請專利範圍第12項之方法,其中該聚矽氧覆層係在使該磷光體聚矽氧摻混物固化之前,由磷光體聚矽氧摻混物中的磷光體沉降所形成,該磷光體沉降形成該第一層與該聚矽氧覆層。
- 如申請專利範圍第20項之方法,其中該磷光體沉降藉由對該磷光體聚矽氧摻混物施加經加強之重力而得到幫助。
- 如申請專利範圍第12項之方法,其中該覆層不包含磷光體。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI799765B (zh) * | 2019-12-18 | 2023-04-21 | 英商普利希半導體有限公司 | 發光二極體前驅物 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9590148B2 (en) * | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
US9680067B2 (en) | 2014-03-18 | 2017-06-13 | GE Lighting Solutions, LLC | Heavily phosphor loaded LED packages having higher stability |
EP3590307B1 (en) * | 2017-02-28 | 2023-09-27 | Quarkstar LLC | Lifetime color stabilization of color-shifting artificial light sources |
RU2666578C1 (ru) * | 2017-08-08 | 2018-09-11 | Акционерное общество "Центральный научно-исследовательский институт "Электрон" | Светоизлучающий диод |
CN111712555B (zh) * | 2018-02-12 | 2023-06-09 | 昕诺飞控股有限公司 | 照明装置、灯具和提供聚合物主体基质元件的方法 |
US11056625B2 (en) * | 2018-02-19 | 2021-07-06 | Creeled, Inc. | Clear coating for light emitting device exterior having chemical resistance and related methods |
CN109668062A (zh) * | 2018-12-11 | 2019-04-23 | 业成科技(成都)有限公司 | 发光二极体面光源结构 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP4271747B2 (ja) | 1997-07-07 | 2009-06-03 | 株式会社朝日ラバー | 発光ダイオード用透光性被覆材及び蛍光カラー光源 |
US6204523B1 (en) | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
CN100423296C (zh) | 2001-09-03 | 2008-10-01 | 松下电器产业株式会社 | 半导体发光元件、发光装置及半导体发光元件的制造方法 |
TWI245436B (en) | 2003-10-30 | 2005-12-11 | Kyocera Corp | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
US7497973B2 (en) * | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
EP1865564B1 (en) * | 2005-03-18 | 2014-11-19 | Mitsubishi Chemical Corporation | Light-emitting device, white light-emitting device, illuminator, and image display |
JP2007123390A (ja) * | 2005-10-26 | 2007-05-17 | Kyocera Corp | 発光装置 |
US7521728B2 (en) | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
KR100785492B1 (ko) | 2006-04-17 | 2007-12-13 | 한국과학기술원 | 새로운 조성의 황색 발광 Ce3+부활 실리케이트황색형광체, 그 제조방법 및 상기 형광체를 포함하는 백색발광 다이오드 |
JP5205724B2 (ja) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | 発光装置 |
JP5578597B2 (ja) * | 2007-09-03 | 2014-08-27 | 独立行政法人物質・材料研究機構 | 蛍光体及びその製造方法、並びにそれを用いた発光装置 |
US8491816B2 (en) | 2008-02-07 | 2013-07-23 | Mitsubishi Chemical Corporation | Semiconductor light emitting device, backlight, color image display device and phosphor to be used for them |
US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
JP2010093132A (ja) | 2008-10-09 | 2010-04-22 | Sharp Corp | 半導体発光装置およびそれを用いた画像表示装置、液晶表示装置 |
JP5308773B2 (ja) | 2008-10-30 | 2013-10-09 | スタンレー電気株式会社 | 半導体発光装置 |
US8039862B2 (en) | 2009-03-10 | 2011-10-18 | Nepes Led Corporation | White light emitting diode package having enhanced white lighting efficiency and method of making the same |
US8058667B2 (en) | 2009-03-10 | 2011-11-15 | Nepes Led Corporation | Leadframe package for light emitting diode device |
JP5423120B2 (ja) | 2009-04-17 | 2014-02-19 | 三菱化学株式会社 | 半導体発光装置 |
JP2011054958A (ja) * | 2009-08-06 | 2011-03-17 | Mitsubishi Chemicals Corp | 半導体発光装置、並びに画像表示装置及び照明装置 |
US20110031516A1 (en) | 2009-08-07 | 2011-02-10 | Koninklijke Philips Electronics N.V. | Led with silicone layer and laminated remote phosphor layer |
US20100276712A1 (en) * | 2009-11-03 | 2010-11-04 | Alexander Shaikevitch | Light emitting diode with thin multilayer phosphor film |
JP5076017B2 (ja) * | 2010-08-23 | 2012-11-21 | 株式会社東芝 | 発光装置 |
EP2613371B1 (en) * | 2010-08-31 | 2019-04-24 | Nichia Corporation | Light emitting device and method for manufacturing same |
JP5622494B2 (ja) | 2010-09-09 | 2014-11-12 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
CN102986044B (zh) | 2010-10-15 | 2015-05-06 | 三菱化学株式会社 | 白色发光装置及照明器具 |
DE102010063760B4 (de) * | 2010-12-21 | 2022-12-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
EP2669350B1 (en) * | 2011-01-28 | 2018-11-07 | Showa Denko K.K. | Composition containing quantum dot fluorescent body, molded body of quantum dot fluorescent body dispersion resin, structure containing quantum dot fluorescent body, light-emitting device, electronic apparatus, mechanical device, and method for producing molded body of quantum dot fluorescent body dispersion resin |
DE102011003969B4 (de) | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP5762044B2 (ja) * | 2011-02-23 | 2015-08-12 | 三菱電機株式会社 | 発光装置及び発光装置群及び製造方法 |
US8252613B1 (en) | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
EP2503606B1 (en) | 2011-03-25 | 2020-02-26 | Samsung Electronics Co., Ltd. | Light Emitting Diode, Manufacturing Method Thereof, Light Emitting Diode Module, and Manufacturing Method Thereof |
JP5105132B1 (ja) * | 2011-06-02 | 2012-12-19 | 三菱化学株式会社 | 半導体発光装置、半導体発光システムおよび照明器具 |
WO2012165524A1 (ja) | 2011-06-03 | 2012-12-06 | 三菱化学株式会社 | 半導体発光装置、展示物照射用照明装置、肉照射用照明装置、野菜照射用照明装置、鮮魚照射用照明装置、一般用照明装置、および半導体発光システム |
JP5919504B2 (ja) * | 2011-06-30 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 発光装置 |
DE102011081083A1 (de) | 2011-08-17 | 2013-02-21 | Osram Ag | Presswerkzeug und verfahren zum pressen eines silikonelements |
US8841689B2 (en) * | 2012-02-03 | 2014-09-23 | Shin-Etsu Chemical Co., Ltd. | Heat-curable silicone resin sheet having phosphor-containing layer and phosphor-free layer, method of producing light emitting device utilizing same and light emitting semiconductor device obtained by the method |
US9343441B2 (en) * | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
JP5840540B2 (ja) * | 2012-03-15 | 2016-01-06 | 株式会社東芝 | 白色照明装置 |
DE102012208900A1 (de) | 2012-05-25 | 2013-11-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen optoelektronischer Bauelemente und Vorrichtung zum Herstellen optoelektronischer Bauelemente |
US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
JP2014041993A (ja) * | 2012-07-24 | 2014-03-06 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
DE102012213195A1 (de) | 2012-07-26 | 2014-01-30 | Osram Gmbh | Verfahren zum Belegen einer Oberfläche mit Leuchtstoff |
US9761763B2 (en) * | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9680067B2 (en) | 2014-03-18 | 2017-06-13 | GE Lighting Solutions, LLC | Heavily phosphor loaded LED packages having higher stability |
-
2014
- 2014-03-18 US US14/217,831 patent/US9680067B2/en active Active
-
2015
- 2015-02-23 KR KR1020227009789A patent/KR20220045236A/ko not_active IP Right Cessation
- 2015-02-23 CN CN202110725667.8A patent/CN113675322A/zh active Pending
- 2015-02-23 MX MX2016012013A patent/MX2016012013A/es unknown
- 2015-02-23 EP EP15707243.0A patent/EP3120394B1/en active Active
- 2015-02-23 EP EP23216627.2A patent/EP4332196A2/en active Pending
- 2015-02-23 CA CA2942044A patent/CA2942044C/en active Active
- 2015-02-23 CN CN201580014432.0A patent/CN106463584A/zh active Pending
- 2015-02-23 KR KR1020247004203A patent/KR20240023202A/ko active Application Filing
- 2015-02-23 KR KR1020167028521A patent/KR20160133528A/ko not_active Application Discontinuation
- 2015-02-23 MY MYPI2016702904A patent/MY178038A/en unknown
- 2015-02-23 WO PCT/US2015/017010 patent/WO2015142478A1/en active Application Filing
- 2015-02-23 JP JP2016556865A patent/JP6855245B2/ja active Active
- 2015-03-05 TW TW104107021A patent/TWI657600B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI799765B (zh) * | 2019-12-18 | 2023-04-21 | 英商普利希半導體有限公司 | 發光二極體前驅物 |
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KR20220045236A (ko) | 2022-04-12 |
EP3120394A1 (en) | 2017-01-25 |
EP4332196A2 (en) | 2024-03-06 |
KR20160133528A (ko) | 2016-11-22 |
CN113675322A (zh) | 2021-11-19 |
JP2017511599A (ja) | 2017-04-20 |
MX2016012013A (es) | 2016-12-05 |
US9680067B2 (en) | 2017-06-13 |
CN106463584A (zh) | 2017-02-22 |
EP3120394B1 (en) | 2023-12-20 |
MY178038A (en) | 2020-09-30 |
JP6855245B2 (ja) | 2021-04-07 |
TWI657600B (zh) | 2019-04-21 |
CA2942044A1 (en) | 2015-09-24 |
KR20240023202A (ko) | 2024-02-20 |
US20150270451A1 (en) | 2015-09-24 |
WO2015142478A1 (en) | 2015-09-24 |
CA2942044C (en) | 2023-01-03 |
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