KR20160105490A - 플랫 패널 디스플레이용 배선막 - Google Patents

플랫 패널 디스플레이용 배선막 Download PDF

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Publication number
KR20160105490A
KR20160105490A KR1020167020933A KR20167020933A KR20160105490A KR 20160105490 A KR20160105490 A KR 20160105490A KR 1020167020933 A KR1020167020933 A KR 1020167020933A KR 20167020933 A KR20167020933 A KR 20167020933A KR 20160105490 A KR20160105490 A KR 20160105490A
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South Korea
Prior art keywords
layer
wiring
alloy
film
wiring film
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Ceased
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KR1020167020933A
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English (en)
Korean (ko)
Inventor
히로시 고토
유미 이와나리
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가부시키가이샤 고베 세이코쇼
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Publication of KR20160105490A publication Critical patent/KR20160105490A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
KR1020167020933A 2014-02-07 2015-01-21 플랫 패널 디스플레이용 배선막 Ceased KR20160105490A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-022822 2014-02-07
JP2014022822 2014-02-07
PCT/JP2015/051561 WO2015118947A1 (ja) 2014-02-07 2015-01-21 フラットパネルディスプレイ用配線膜

Publications (1)

Publication Number Publication Date
KR20160105490A true KR20160105490A (ko) 2016-09-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167020933A Ceased KR20160105490A (ko) 2014-02-07 2015-01-21 플랫 패널 디스플레이용 배선막

Country Status (6)

Country Link
US (1) US20160345425A1 (enExample)
JP (2) JP6475997B2 (enExample)
KR (1) KR20160105490A (enExample)
CN (1) CN105900216B (enExample)
TW (1) TWI661474B (enExample)
WO (1) WO2015118947A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10186618B2 (en) * 2015-03-18 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6228631B1 (ja) * 2016-06-07 2017-11-08 株式会社コベルコ科研 Ａｌ合金スパッタリングターゲット
JP6325641B1 (ja) * 2016-11-30 2018-05-16 株式会社コベルコ科研 アルミニウム合金スパッタリングターゲット
JP2018204059A (ja) * 2017-05-31 2018-12-27 株式会社神戸製鋼所 フレキシブル表示装置用Ａｌ合金膜およびフレキシブル表示装置
JP7126321B2 (ja) * 2018-10-10 2022-08-26 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ
KR20220033650A (ko) * 2020-09-09 2022-03-17 삼성디스플레이 주식회사 반사 전극 및 이를 포함하는 표시 장치
CN118226323B (zh) * 2024-04-10 2024-11-22 禹创半导体(深圳)有限公司 一种面板走线检测方法、装置、设备及可读存储介质

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2733006B2 (ja) 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942098A (en) * 1987-03-26 1990-07-17 Sumitomo Special Metals, Co., Ltd. Corrosion resistant permanent magnet
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
JP3288637B2 (ja) * 1998-08-28 2002-06-04 富士通株式会社 Ｉｔｏ膜接続構造、ｔｆｔ基板及びその製造方法
US6572518B1 (en) * 1999-11-09 2003-06-03 Kawasaki Steel Corporation Cermet powder for sprayed coating excellent in build-up resistance and roll having sprayed coating thereon
JP4783525B2 (ja) * 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
US7683370B2 (en) * 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
JP4117002B2 (ja) * 2005-12-02 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
US7781767B2 (en) * 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
JP5022364B2 (ja) * 2006-10-16 2012-09-12 三井金属鉱業株式会社 配線用積層膜及び配線回路
JP5101249B2 (ja) * 2006-11-10 2012-12-19 Ｊｆｅ鋼板株式会社 溶融Ｚｎ−Ａｌ系合金めっき鋼板およびその製造方法
JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4377906B2 (ja) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP4170367B2 (ja) * 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
US20100170593A1 (en) * 2007-01-15 2010-07-08 Toshio Narita Oxidation resistant alloy coating film, method of producing an oxidation resistant alloy coating film, and heat resistant metal member
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP2009008770A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP5143649B2 (ja) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) * 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
JP5139134B2 (ja) * 2008-03-31 2013-02-06 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｃｕ系Ａｌ基合金スパッタリングターゲットおよびその製造方法
KR101124831B1 (ko) * 2008-03-31 2012-03-26 가부시키가이샤 고베 세이코쇼 표시 장치, 그 제조 방법 및 스퍼터링 타깃
JP5432550B2 (ja) * 2008-03-31 2014-03-05 株式会社コベルコ科研 Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
WO2009131169A1 (ja) * 2008-04-23 2009-10-29 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP2009282514A (ja) * 2008-04-24 2009-12-03 Kobe Steel Ltd 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP5308760B2 (ja) * 2008-09-30 2013-10-09 株式会社日立製作所 表示装置
JP5159558B2 (ja) * 2008-10-28 2013-03-06 株式会社神戸製鋼所 表示装置の製造方法
US20110198602A1 (en) * 2008-11-05 2011-08-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy film for display device, display device, and sputtering target
JP2010135300A (ja) * 2008-11-10 2010-06-17 Kobe Steel Ltd 有機ｅｌディスプレイ用の反射アノード電極およびその製造方法
JP4567091B1 (ja) * 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
US20100244032A1 (en) * 2009-03-31 2010-09-30 Samsung Electronics Co., Ltd. Aluminum-nickel alloy wiring material, device for a thin film transistor and a thin film transistor substrate using the same, and method of manufacturing the thin film transistor substrate
JP2010262991A (ja) * 2009-04-30 2010-11-18 Kobe Steel Ltd 現像液耐性に優れた表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
KR101084277B1 (ko) * 2010-02-03 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 그 제조방법
JP2012015200A (ja) * 2010-06-29 2012-01-19 Kobe Steel Ltd 薄膜トランジスタ基板、および薄膜トランジスタ基板を備えた表示デバイス
JP5032687B2 (ja) * 2010-09-30 2012-09-26 株式会社神戸製鋼所 Ａｌ合金膜、Ａｌ合金膜を有する配線構造、およびＡｌ合金膜の製造に用いられるスパッタリングターゲット
KR101824537B1 (ko) * 2010-10-01 2018-03-15 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 디스플레이
US20130233706A1 (en) * 2010-10-08 2013-09-12 Kobelco Research Institute Inc. Al-based alloy sputtering target and production method of same
JP6016083B2 (ja) * 2011-08-19 2016-10-26 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP2013084907A (ja) * 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
JP6089535B2 (ja) * 2011-10-28 2017-03-08 Tdk株式会社 Ｒ−ｔ−ｂ系焼結磁石

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2733006B2 (ja) 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット

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