KR20160013872A - 반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물 - Google Patents

반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물 Download PDF

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KR20160013872A
KR20160013872A KR1020157033397A KR20157033397A KR20160013872A KR 20160013872 A KR20160013872 A KR 20160013872A KR 1020157033397 A KR1020157033397 A KR 1020157033397A KR 20157033397 A KR20157033397 A KR 20157033397A KR 20160013872 A KR20160013872 A KR 20160013872A
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South Korea
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group
component
semiconductor device
bonded
mass
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KR1020157033397A
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English (en)
Korean (ko)
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유스케 미야모토
히로아키 요시다
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다우 코닝 도레이 캄파니 리미티드
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Publication of KR20160013872A publication Critical patent/KR20160013872A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/548—Silicon-containing compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
KR1020157033397A 2013-05-29 2014-05-28 반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물 KR20160013872A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013112503 2013-05-29
JPJP-P-2013-112503 2013-05-29
PCT/JP2014/064798 WO2014192969A1 (ja) 2013-05-29 2014-05-28 半導体装置および半導体素子封止用硬化性シリコーン組成物

Publications (1)

Publication Number Publication Date
KR20160013872A true KR20160013872A (ko) 2016-02-05

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KR1020157033397A KR20160013872A (ko) 2013-05-29 2014-05-28 반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물

Country Status (5)

Country Link
JP (1) JP6355210B2 (ja)
KR (1) KR20160013872A (ja)
CN (1) CN105229783B (ja)
TW (1) TWI621664B (ja)
WO (1) WO2014192969A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180120594A (ko) * 2017-04-27 2018-11-06 신에쓰 가가꾸 고교 가부시끼가이샤 부가 경화형 실리콘 조성물, 해당 조성물의 제조 방법, 실리콘 경화물 및 광학 소자
KR20200018702A (ko) * 2017-07-10 2020-02-19 다우 실리콘즈 코포레이션 경화성 실리콘 조성물 및 광반도체 장치

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TWI660008B (zh) * 2014-08-26 2019-05-21 日商琳得科股份有限公司 硬化性組合物、硬化性組合物之製造方法、硬化物、硬化性組合物之使用方法以及光裝置
JP6480360B2 (ja) * 2016-02-18 2019-03-06 信越化学工業株式会社 半導体装置
KR102659459B1 (ko) * 2016-04-22 2024-04-23 가부시키가이샤 아데카 규소 함유 경화성 조성물 및 그 경화물
JP7130316B2 (ja) * 2017-07-05 2022-09-05 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 硬化性ポリオルガノシロキサン組成物
TWI791554B (zh) * 2017-07-31 2023-02-11 美商陶氏有機矽公司 可固化有機聚矽氧烷組成物及光學半導體裝置
CN112300576B (zh) * 2019-07-30 2024-05-14 杜邦东丽特殊材料株式会社 热熔性固化性有机硅组合物、密封剂、膜以及光半导体元件
JP2021080365A (ja) * 2019-11-19 2021-05-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 密着促進組成物および積層体の製造方法、ならびに膜形成組成物および膜の製造方法
US20230250284A1 (en) * 2020-07-13 2023-08-10 Dow Toray Co., Ltd. Silicone gel composition, cured product thereof, and use therefor

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JPH07228667A (ja) * 1994-02-18 1995-08-29 Sekisui Chem Co Ltd 型内被覆成形用被覆組成物
KR20080031734A (ko) * 2005-06-24 2008-04-10 엑손모빌 케미칼 패턴츠 인코포레이티드 작용화된 프로필렌 공중합체 접착제 조성물
JP5705416B2 (ja) * 2008-04-11 2015-04-22 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 半導体用硬化性シリコーン組成物及びそれを用いた半導体装置
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
ES2384302T3 (es) * 2009-12-18 2012-07-03 Sika Technology Ag Composiciones de adhesivo termofusible con buena adhesión tanto a sustratos polares como a sustratos apolares
JP5682257B2 (ja) * 2010-07-30 2015-03-11 三菱化学株式会社 半導体発光装置用樹脂組成物
KR101305438B1 (ko) * 2011-05-13 2013-09-06 현대자동차주식회사 폴리우레탄과 알루미늄의 접착을 위한 접착제
JP2013043901A (ja) * 2011-08-22 2013-03-04 Sumitomo Rubber Ind Ltd タイヤ用ゴム組成物及び空気入りタイヤ
JP5545601B2 (ja) * 2011-11-07 2014-07-09 信越化学工業株式会社 蛍光体高充填波長変換シート、それを用いた発光半導体装置の製造方法、及び該発光半導体装置
JP6087127B2 (ja) * 2012-12-14 2017-03-01 株式会社カネカ 流動性を改善した熱硬化性樹脂組成物及びそれを用いた半導体のパッケージ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180120594A (ko) * 2017-04-27 2018-11-06 신에쓰 가가꾸 고교 가부시끼가이샤 부가 경화형 실리콘 조성물, 해당 조성물의 제조 방법, 실리콘 경화물 및 광학 소자
KR20200018702A (ko) * 2017-07-10 2020-02-19 다우 실리콘즈 코포레이션 경화성 실리콘 조성물 및 광반도체 장치

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Publication number Publication date
WO2014192969A1 (ja) 2014-12-04
JPWO2014192969A1 (ja) 2017-02-23
TWI621664B (zh) 2018-04-21
TW201502208A (zh) 2015-01-16
JP6355210B2 (ja) 2018-07-11
CN105229783A (zh) 2016-01-06
CN105229783B (zh) 2018-06-22

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