KR20160012073A - 패키지 기판의 가공 방법 - Google Patents

패키지 기판의 가공 방법 Download PDF

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Publication number
KR20160012073A
KR20160012073A KR1020150094520A KR20150094520A KR20160012073A KR 20160012073 A KR20160012073 A KR 20160012073A KR 1020150094520 A KR1020150094520 A KR 1020150094520A KR 20150094520 A KR20150094520 A KR 20150094520A KR 20160012073 A KR20160012073 A KR 20160012073A
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KR
South Korea
Prior art keywords
package
package substrate
divided
substrate
line
Prior art date
Application number
KR1020150094520A
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English (en)
Korean (ko)
Inventor
지카라 아이카와
구니미츠 다카하시
사키 기무라
Original Assignee
가부시기가이샤 디스코
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Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20160012073A publication Critical patent/KR20160012073A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Laser Beam Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
KR1020150094520A 2014-07-23 2015-07-02 패키지 기판의 가공 방법 KR20160012073A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014150010A JP2016025282A (ja) 2014-07-23 2014-07-23 パッケージ基板の加工方法
JPJP-P-2014-150010 2014-07-23

Publications (1)

Publication Number Publication Date
KR20160012073A true KR20160012073A (ko) 2016-02-02

Family

ID=55201636

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150094520A KR20160012073A (ko) 2014-07-23 2015-07-02 패키지 기판의 가공 방법

Country Status (4)

Country Link
JP (1) JP2016025282A (ja)
KR (1) KR20160012073A (ja)
CN (1) CN105304563A (ja)
TW (1) TW201604996A (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017199834A (ja) 2016-04-28 2017-11-02 株式会社ジェイデバイス 半導体パッケージ及び半導体パッケージの製造方法
JP2018113281A (ja) * 2017-01-06 2018-07-19 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP6821261B2 (ja) * 2017-04-21 2021-01-27 株式会社ディスコ 被加工物の加工方法
CN109920732B (zh) * 2017-12-12 2021-02-12 中芯国际集成电路制造(上海)有限公司 半导体封装器件的切割方法及半导体器件的封装方法
JP7076776B2 (ja) * 2018-03-30 2022-05-30 三星ダイヤモンド工業株式会社 無機膜積層樹脂基板の分断方法および分断装置
JP7422526B2 (ja) * 2019-12-03 2024-01-26 ダウ・東レ株式会社 シリコーン層を含む積層体の切断方法
US20230058931A1 (en) 2020-02-27 2023-02-23 Applied Materials Italia S.R.L. Support device for supporting a substrate, method of processing a substrate and semiconductor substrate
CN111531287A (zh) * 2020-05-07 2020-08-14 苏州融睿电子科技有限公司 封装壳体及其处理方法和制造方法、激光器、存储介质

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021476A (ja) * 2007-07-13 2009-01-29 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5970209B2 (ja) * 2012-03-13 2016-08-17 Ｔｏｗａ株式会社 積層基板の切断方法および電子部品の製造方法
JP2013232604A (ja) * 2012-05-01 2013-11-14 Towa Corp 積層体の切断方法および樹脂封止電子部品の製造方法
KR20140009890A (ko) * 2012-07-13 2014-01-23 삼성전자주식회사 실리콘 기판을 채용한 발광소자 패키지의 절단 방법

Also Published As

Publication number Publication date
CN105304563A (zh) 2016-02-03
TW201604996A (zh) 2016-02-01
JP2016025282A (ja) 2016-02-08

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