KR20150145257A - 강유전체 메모리 소자 - Google Patents

강유전체 메모리 소자 Download PDF

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Publication number
KR20150145257A
KR20150145257A KR1020157033074A KR20157033074A KR20150145257A KR 20150145257 A KR20150145257 A KR 20150145257A KR 1020157033074 A KR1020157033074 A KR 1020157033074A KR 20157033074 A KR20157033074 A KR 20157033074A KR 20150145257 A KR20150145257 A KR 20150145257A
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South Korea
Prior art keywords
ferroelectric
polymer
vdf
polymers
layer
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Ceased
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KR1020157033074A
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English (en)
Korean (ko)
Inventor
파브리스 도밍게스 도스 산토스
티에리 란누젤
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아르끄마 프랑스
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Publication of KR20150145257A publication Critical patent/KR20150145257A/ko
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    • H01L27/11585—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H01L21/28291—
    • H01L27/11502—
    • H01L27/285—
    • H01L28/40—
    • H01L28/55—
    • H01L29/516—
    • H01L29/6684—
    • H01L29/861—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Semiconductor Memories (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)
KR1020157033074A 2013-04-19 2014-04-16 강유전체 메모리 소자 Ceased KR20150145257A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353571A FR3004854B1 (fr) 2013-04-19 2013-04-19 Dispositif de memoire ferroelectrique
FR1353571 2013-04-19
PCT/FR2014/050926 WO2014170606A1 (fr) 2013-04-19 2014-04-16 Dispositif de memoire ferroelectrique

Publications (1)

Publication Number Publication Date
KR20150145257A true KR20150145257A (ko) 2015-12-29

Family

ID=48782411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157033074A Ceased KR20150145257A (ko) 2013-04-19 2014-04-16 강유전체 메모리 소자

Country Status (7)

Country Link
US (1) US10199384B2 (enExample)
EP (1) EP2987178A1 (enExample)
JP (1) JP2016522569A (enExample)
KR (1) KR20150145257A (enExample)
CN (1) CN105283945B (enExample)
FR (1) FR3004854B1 (enExample)
WO (1) WO2014170606A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
US10403440B2 (en) 2016-12-02 2019-09-03 Carver Scientific, Inc. Capacitive energy storage device
ES2909846T3 (es) 2017-06-16 2022-05-10 Carrier Corp Sistema electrocalórico de transferencia de calor que comprende copolímeros
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
CN115053292A (zh) * 2020-03-17 2022-09-13 华为技术有限公司 平面存储器、立体存储器以及电子设备
EP4567054B1 (en) 2020-06-30 2025-12-17 Novocure GmbH Flexible transducer arrays with a polymer insulating layer for applying tumor treating fields (ttfields)
US12108605B2 (en) * 2022-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
CN121270771A (zh) * 2025-12-10 2026-01-06 华中科技大学 一种铁电聚合物及交联改性制备铁电聚合物的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538157A1 (fr) 1982-12-15 1984-06-22 Saint Louis Inst Procede et dispositif pour polariser des materiaux ferroelectriques
JP2773215B2 (ja) * 1989-04-07 1998-07-09 ダイキン工業株式会社 高分子誘電体材料
US6787238B2 (en) * 1998-11-18 2004-09-07 The Penn State Research Foundation Terpolymer systems for electromechanical and dielectric applications
US6355749B1 (en) 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
AU2003281556A1 (en) * 2002-07-23 2004-02-09 Matsushita Electric Industrial Co., Ltd. Ferroelectric gate device
WO2004078814A2 (en) * 2003-03-04 2004-09-16 Honeywell International Inc. Fluorinated polymers, methods of production and uses in ferroelectric devices thereof
CN100437902C (zh) * 2003-12-22 2008-11-26 皇家飞利浦电子股份有限公司 铁电聚合物层的构图方法
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
CN101356603B (zh) * 2005-12-28 2012-11-21 宾夕法尼亚州研究基金会 基于作为介质材料的独特聚（1,1-二氟乙烯）共聚物和三元共聚物的快速放电和高效率的高电能密度聚合物电容器
JP4124243B2 (ja) * 2006-06-05 2008-07-23 セイコーエプソン株式会社 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
US7842390B2 (en) 2006-10-03 2010-11-30 The Penn State Research Foundation Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
WO2009005555A2 (en) * 2007-04-11 2009-01-08 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
EP1995736A1 (en) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
CN101471180A (zh) * 2007-12-28 2009-07-01 中国科学院上海技术物理研究所 一种三元铁电聚合物薄膜材料的制备方法
FR2944285B1 (fr) * 2009-04-09 2011-11-25 Francois Bauer Procede de fabrication de terpolymeres a base de vdf, trfe et cfe ou ctfe
EP2655446B1 (en) * 2010-12-22 2014-10-29 Solvay Specialty Polymers Italy S.p.A. Vinylidene fluoride and trifluoroethylene polymers

Also Published As

Publication number Publication date
JP2016522569A (ja) 2016-07-28
FR3004854A1 (fr) 2014-10-24
US10199384B2 (en) 2019-02-05
CN105283945A (zh) 2016-01-27
US20160071852A1 (en) 2016-03-10
WO2014170606A1 (fr) 2014-10-23
FR3004854B1 (fr) 2015-04-17
EP2987178A1 (fr) 2016-02-24
CN105283945B (zh) 2019-10-08

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