CN105283945B - 铁电存储器设备 - Google Patents

铁电存储器设备 Download PDF

Info

Publication number
CN105283945B
CN105283945B CN201480034917.1A CN201480034917A CN105283945B CN 105283945 B CN105283945 B CN 105283945B CN 201480034917 A CN201480034917 A CN 201480034917A CN 105283945 B CN105283945 B CN 105283945B
Authority
CN
China
Prior art keywords
ferroelectric
polymer
primitive
sup
polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480034917.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN105283945A (zh
Inventor
F.多明古斯多斯桑托斯
T.兰努泽尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema France SA
Original Assignee
Arkema France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arkema France SA filed Critical Arkema France SA
Publication of CN105283945A publication Critical patent/CN105283945A/zh
Application granted granted Critical
Publication of CN105283945B publication Critical patent/CN105283945B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Semiconductor Memories (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)
CN201480034917.1A 2013-04-19 2014-04-16 铁电存储器设备 Expired - Fee Related CN105283945B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353571A FR3004854B1 (fr) 2013-04-19 2013-04-19 Dispositif de memoire ferroelectrique
FR1353571 2013-04-19
PCT/FR2014/050926 WO2014170606A1 (fr) 2013-04-19 2014-04-16 Dispositif de memoire ferroelectrique

Publications (2)

Publication Number Publication Date
CN105283945A CN105283945A (zh) 2016-01-27
CN105283945B true CN105283945B (zh) 2019-10-08

Family

ID=48782411

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480034917.1A Expired - Fee Related CN105283945B (zh) 2013-04-19 2014-04-16 铁电存储器设备

Country Status (7)

Country Link
US (1) US10199384B2 (enExample)
EP (1) EP2987178A1 (enExample)
JP (1) JP2016522569A (enExample)
KR (1) KR20150145257A (enExample)
CN (1) CN105283945B (enExample)
FR (1) FR3004854B1 (enExample)
WO (1) WO2014170606A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
US10403440B2 (en) 2016-12-02 2019-09-03 Carver Scientific, Inc. Capacitive energy storage device
ES2909846T3 (es) 2017-06-16 2022-05-10 Carrier Corp Sistema electrocalórico de transferencia de calor que comprende copolímeros
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
CN115053292A (zh) * 2020-03-17 2022-09-13 华为技术有限公司 平面存储器、立体存储器以及电子设备
EP4567054B1 (en) 2020-06-30 2025-12-17 Novocure GmbH Flexible transducer arrays with a polymer insulating layer for applying tumor treating fields (ttfields)
US12108605B2 (en) * 2022-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
CN121270771A (zh) * 2025-12-10 2026-01-06 华中科技大学 一种铁电聚合物及交联改性制备铁电聚合物的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040109367A1 (en) * 2002-07-23 2004-06-10 Matsushita Electric Incustrial Co., Ltd. Ferroelectric element and a ferroelectric gate device using the same
US20090285981A1 (en) * 2005-06-14 2009-11-19 Peter Dyreklev Method in the fabrication of a ferroelectric memory device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538157A1 (fr) 1982-12-15 1984-06-22 Saint Louis Inst Procede et dispositif pour polariser des materiaux ferroelectriques
JP2773215B2 (ja) * 1989-04-07 1998-07-09 ダイキン工業株式会社 高分子誘電体材料
US6787238B2 (en) * 1998-11-18 2004-09-07 The Penn State Research Foundation Terpolymer systems for electromechanical and dielectric applications
US6355749B1 (en) 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
WO2004078814A2 (en) * 2003-03-04 2004-09-16 Honeywell International Inc. Fluorinated polymers, methods of production and uses in ferroelectric devices thereof
CN100437902C (zh) * 2003-12-22 2008-11-26 皇家飞利浦电子股份有限公司 铁电聚合物层的构图方法
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
CN101356603B (zh) * 2005-12-28 2012-11-21 宾夕法尼亚州研究基金会 基于作为介质材料的独特聚（1,1-二氟乙烯）共聚物和三元共聚物的快速放电和高效率的高电能密度聚合物电容器
JP4124243B2 (ja) * 2006-06-05 2008-07-23 セイコーエプソン株式会社 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
US7842390B2 (en) 2006-10-03 2010-11-30 The Penn State Research Foundation Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
WO2009005555A2 (en) * 2007-04-11 2009-01-08 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
EP1995736A1 (en) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
CN101471180A (zh) * 2007-12-28 2009-07-01 中国科学院上海技术物理研究所 一种三元铁电聚合物薄膜材料的制备方法
FR2944285B1 (fr) * 2009-04-09 2011-11-25 Francois Bauer Procede de fabrication de terpolymeres a base de vdf, trfe et cfe ou ctfe
EP2655446B1 (en) * 2010-12-22 2014-10-29 Solvay Specialty Polymers Italy S.p.A. Vinylidene fluoride and trifluoroethylene polymers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040109367A1 (en) * 2002-07-23 2004-06-10 Matsushita Electric Incustrial Co., Ltd. Ferroelectric element and a ferroelectric gate device using the same
US20090285981A1 (en) * 2005-06-14 2009-11-19 Peter Dyreklev Method in the fabrication of a ferroelectric memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory;Xin Chen等;《Applied Physics Letters》;20130211;第102卷;第1-5页 *

Also Published As

Publication number Publication date
JP2016522569A (ja) 2016-07-28
FR3004854A1 (fr) 2014-10-24
US10199384B2 (en) 2019-02-05
CN105283945A (zh) 2016-01-27
US20160071852A1 (en) 2016-03-10
KR20150145257A (ko) 2015-12-29
WO2014170606A1 (fr) 2014-10-23
FR3004854B1 (fr) 2015-04-17
EP2987178A1 (fr) 2016-02-24

Similar Documents

Publication Publication Date Title
CN105283945B (zh) 铁电存储器设备
KR101802692B1 (ko) 강유전체 커패시터-계 메모리 기기
Lu et al. A modular approach to ferroelectric polymers with chemically tunable curie temperatures and dielectric constants
US9434801B2 (en) Polymer and polymer actuator comprising the same
CN101356603B (zh) 基于作为介质材料的独特聚（1,1-二氟乙烯）共聚物和三元共聚物的快速放电和高效率的高电能密度聚合物电容器
CN106575622B (zh) 使用两步温度处理来制造薄膜铁电装置的方法
Xu et al. Intrinsic elastomer with remarkable dielectric constant via elastification of relaxor ferroelectric polymer
CN113652043B (zh) 膜
CN1589479A (zh) 铁电或驻极体存储电路
Shin et al. Chemically cross-linked thin poly (vinylidene fluoride-co-trifluoroethylene) films for nonvolatile ferroelectric polymer memory
KR102569460B1 (ko) 불소화된 전기활성 폴리머의 조성물, 포뮬레이션, 필름, 전자 디바이스 및 유기 전계-효과 트랜지스터
CN109494228B (zh) 一种具有多位存储功能的非易失性存储器及其制备方法
Zhu et al. Enhancing discharged energy density and suppressing dielectric loss of poly (vinylidene fluoride‐ter‐trifluoroethylene‐ter‐chlorofluoroethylene) by a sandwiched structure
EP0885447A1 (en) Thermal sensing polymeric capacitor
Kim et al. Fabrication and characterization of ferroelectric multilayered films fabricated by using solvent blending
TW202035476A (zh) 包含可極化基團的電活性氟聚合物
WO2008082045A1 (en) Memory device and method of manufacturing the same
Bauer et al. Relaxor Fluorinated Polymers: novel applications and recent developments
CN108428622A (zh) 一种高热释电系数pvdf基多层膜的制备方法
Khan Polymer Ferroelectric Memory for Flexible Electronics
HK1073921A (en) A ferroelectric or electret memory circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20191008

Termination date: 20200416