KR20150120996A - 산화 니오브 스퍼터링 타깃, 그 제조 방법 및 산화 니오브막 - Google Patents

산화 니오브 스퍼터링 타깃, 그 제조 방법 및 산화 니오브막 Download PDF

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KR20150120996A
KR20150120996A KR1020157022703A KR20157022703A KR20150120996A KR 20150120996 A KR20150120996 A KR 20150120996A KR 1020157022703 A KR1020157022703 A KR 1020157022703A KR 20157022703 A KR20157022703 A KR 20157022703A KR 20150120996 A KR20150120996 A KR 20150120996A
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niobium oxide
powder
sputtering
sintered body
oxygen
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Korean (ko)
Inventor
게이타 우메모토
쇼우빈 장
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미쓰비시 마테리알 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/6265—Thermal treatment of powders or mixtures thereof other than sintering involving reduction or oxidation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C04B35/6455—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C04B2235/3253—Substoichiometric niobium or tantalum oxides, e.g. NbO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)
KR1020157022703A 2013-02-26 2014-02-20 산화 니오브 스퍼터링 타깃, 그 제조 방법 및 산화 니오브막 Withdrawn KR20150120996A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013035575 2013-02-26
JPJP-P-2013-035575 2013-02-26
JP2014023246A JP6403087B2 (ja) 2013-02-26 2014-02-10 酸化ニオブスパッタリングターゲット及びその製造方法
JPJP-P-2014-023246 2014-02-10
PCT/JP2014/054004 WO2014132872A1 (ja) 2013-02-26 2014-02-20 酸化ニオブスパッタリングターゲット、その製造方法及び酸化ニオブ膜

Publications (1)

Publication Number Publication Date
KR20150120996A true KR20150120996A (ko) 2015-10-28

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KR1020157022703A Withdrawn KR20150120996A (ko) 2013-02-26 2014-02-20 산화 니오브 스퍼터링 타깃, 그 제조 방법 및 산화 니오브막

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JP (1) JP6403087B2 (https=)
KR (1) KR20150120996A (https=)
CN (1) CN105074046A (https=)
TW (1) TWI603938B (https=)
WO (1) WO2014132872A1 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
SG11201701834RA (en) * 2014-10-06 2017-04-27 Jx Nippon Mining & Metals Corp Niobium oxide sintered compact, sputtering target formed from said sintered compact, and method ofproducing niobium oxide sintered compact
JP6492877B2 (ja) * 2015-03-30 2019-04-03 東ソー株式会社 酸化物焼結体及びその製造方法
CN105506737B (zh) * 2015-12-28 2018-02-09 常州瞻驰光电科技有限公司 一种非化学计量比氧化铌多晶镀膜材料及其生长技术
CN110963529B (zh) * 2018-09-30 2021-12-07 中国科学院上海硅酸盐研究所 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用
CN113574203A (zh) 2019-03-26 2021-10-29 Ｊｘ金属株式会社 铌溅射靶
CN110467462A (zh) * 2019-08-09 2019-11-19 宁夏中色新材料有限公司 一种高致密低电阻氧化铌旋转靶材及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915177B2 (ja) * 1990-11-30 1999-07-05 株式会社日立製作所 スパッタリングターゲットの製造方法及びこの方法によって製造されたスパッタリングターゲット
JP2000113913A (ja) * 1998-10-02 2000-04-21 Sumitomo Osaka Cement Co Ltd 色素増感型太陽電池
JP2002338354A (ja) * 2001-05-18 2002-11-27 Kyocera Corp 酸化ニオブ焼結体とその製造方法及びこれを用いたスパッタリングターゲット
JP2003098340A (ja) * 2001-09-21 2003-04-03 Asahi Glass Co Ltd 光学多層干渉膜とその製造方法および光学多層干渉膜を用いたフィルター
JP2003123853A (ja) * 2001-10-11 2003-04-25 Bridgestone Corp 有機色素増感型金属酸化物半導体電極及びその製造方法、並びにこの半導体電極を有する太陽電池
JP2004059965A (ja) * 2002-07-25 2004-02-26 Toshiba Corp スパッタリングターゲットおよびその製造方法
JP4670097B2 (ja) * 2005-04-27 2011-04-13 Ａｇｃセラミックス株式会社 ターゲットおよび該ターゲットによる高屈折率膜の製造方法
CN101851740A (zh) * 2009-04-02 2010-10-06 宜兴佰伦光电材料科技有限公司 用于磁控溅射镀膜的导电Nb2O5-x靶材及生产方法
CN101864555A (zh) * 2009-04-14 2010-10-20 上海高展金属材料有限公司 一种导电的氧化铌靶材、制备方法及其应用
TWI385814B (zh) * 2009-05-25 2013-02-11 Ind Tech Res Inst 光電致變色元件及其製作方法
KR101137913B1 (ko) * 2009-11-12 2012-05-03 삼성코닝정밀소재 주식회사 다상 Ｎｂ0ｘ 스퍼터링 타겟 및 그 제조방법
JP5249963B2 (ja) * 2010-02-01 2013-07-31 三井金属鉱業株式会社 セラミックス−金属複合材料からなるスパッタリングターゲット材およびスパッタリングターゲット
KR101967945B1 (ko) * 2010-04-26 2019-04-10 제이엑스금속주식회사 Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃
JP2012126619A (ja) * 2010-12-16 2012-07-05 Sumitomo Chemical Co Ltd 酸化亜鉛焼結体およびその製造方法
JP5630416B2 (ja) * 2011-03-23 2014-11-26 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金粉末の製造方法
JP5501306B2 (ja) * 2011-08-18 2014-05-21 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット
JP2012017258A (ja) * 2011-10-05 2012-01-26 Idemitsu Kosan Co Ltd Ｉｎ−Ｇａ−Ｚｎ系酸化物スパッタリングターゲット
CN102659405B (zh) * 2012-04-06 2014-02-26 西北稀有金属材料研究院 高密度氧化铌溅射靶材的制备方法

Also Published As

Publication number Publication date
JP2014194072A (ja) 2014-10-09
JP6403087B2 (ja) 2018-10-10
WO2014132872A1 (ja) 2014-09-04
TW201439032A (zh) 2014-10-16
TWI603938B (zh) 2017-11-01
CN105074046A (zh) 2015-11-18

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Patent event date: 20150821

Patent event code: PA01051R01D

Comment text: International Patent Application

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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid