KR20150002498A - 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치 - Google Patents

다층 보호막의 형성 방법 및 다층 보호막의 형성 장치 Download PDF

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Publication number
KR20150002498A
KR20150002498A KR1020140077930A KR20140077930A KR20150002498A KR 20150002498 A KR20150002498 A KR 20150002498A KR 1020140077930 A KR1020140077930 A KR 1020140077930A KR 20140077930 A KR20140077930 A KR 20140077930A KR 20150002498 A KR20150002498 A KR 20150002498A
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KR
South Korea
Prior art keywords
silicon
gas
film
silicon nitride
forming step
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KR1020140077930A
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English (en)
Korean (ko)
Inventor
데츠야 다카토
사치오 와타나베
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150002498A publication Critical patent/KR20150002498A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
KR1020140077930A 2013-06-28 2014-06-25 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치 KR20150002498A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013136309A JP6232219B2 (ja) 2013-06-28 2013-06-28 多層保護膜の形成方法
JPJP-P-2013-136309 2013-06-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170074889A Division KR102047591B1 (ko) 2013-06-28 2017-06-14 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치

Publications (1)

Publication Number Publication Date
KR20150002498A true KR20150002498A (ko) 2015-01-07

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020140077930A KR20150002498A (ko) 2013-06-28 2014-06-25 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치
KR1020170074889A KR102047591B1 (ko) 2013-06-28 2017-06-14 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치

Family Applications After (1)

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KR1020170074889A KR102047591B1 (ko) 2013-06-28 2017-06-14 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치

Country Status (4)

Country Link
JP (1) JP6232219B2 (zh)
KR (2) KR20150002498A (zh)
CN (1) CN104250724B (zh)
TW (1) TWI665730B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180124779A (ko) * 2017-05-12 2018-11-21 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523071B2 (ja) 2015-06-19 2019-05-29 東京エレクトロン株式会社 プラズマを用いた成膜方法
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP6689140B2 (ja) 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
JP7130548B2 (ja) * 2018-07-30 2022-09-05 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102151101B1 (ko) 2018-12-07 2020-09-02 연세대학교 산학협력단 산화물 반도체 박막 트랜지스터
JP7240946B2 (ja) 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
CN110429024B (zh) 2019-08-08 2022-04-15 京东方科技集团股份有限公司 层间绝缘层及薄膜晶体管的制备方法
US11037851B2 (en) * 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
JP7333758B2 (ja) 2020-01-23 2023-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7418703B2 (ja) * 2020-07-01 2024-01-22 日新電機株式会社 薄膜トランジスタ
JP2022080422A (ja) * 2020-11-18 2022-05-30 東京エレクトロン株式会社 窒化シリコン膜の成膜方法及び成膜装置
JP2024069058A (ja) 2022-11-09 2024-05-21 東京エレクトロン株式会社 成膜方法及び成膜装置

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JP3148183B2 (ja) 1998-08-31 2001-03-19 日本電気株式会社 半導体装置の製造方法
JP2000114257A (ja) * 1998-10-06 2000-04-21 Toshiba Corp 半導体装置の製造方法
JP4955848B2 (ja) * 2000-02-28 2012-06-20 エルジー ディスプレイ カンパニー リミテッド 電子素子用基板製造方法
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
US7696683B2 (en) * 2006-01-19 2010-04-13 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
KR101254986B1 (ko) * 2008-09-30 2013-04-16 도쿄엘렉트론가부시키가이샤 질화 규소막 및 그의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및, 플라즈마 ｃｖｄ 장치
JP2010087187A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd 酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
JP5679143B2 (ja) * 2009-12-01 2015-03-04 ソニー株式会社 薄膜トランジスタならびに表示装置および電子機器
US9490368B2 (en) * 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8441010B2 (en) * 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103098185B (zh) * 2010-08-20 2017-02-08 应用材料公司 形成无氢含硅介电薄膜的方法
JP5604316B2 (ja) * 2011-01-19 2014-10-08 株式会社アルバック 成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180124779A (ko) * 2017-05-12 2018-11-21 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Also Published As

Publication number Publication date
JP6232219B2 (ja) 2017-11-15
TW201515106A (zh) 2015-04-16
TWI665730B (zh) 2019-07-11
CN104250724B (zh) 2018-05-29
JP2015012131A (ja) 2015-01-19
CN104250724A (zh) 2014-12-31
KR20170069991A (ko) 2017-06-21
KR102047591B1 (ko) 2019-11-21

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