KR20140135655A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140135655A
KR20140135655A KR20140058844A KR20140058844A KR20140135655A KR 20140135655 A KR20140135655 A KR 20140135655A KR 20140058844 A KR20140058844 A KR 20140058844A KR 20140058844 A KR20140058844 A KR 20140058844A KR 20140135655 A KR20140135655 A KR 20140135655A
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KR
South Korea
Prior art keywords
insulating film
electrode
film
gate electrode
oxide semiconductor
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Ceased
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KR20140058844A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
히로유키 미야케
세이코 이노우에
다이스케 마츠바야시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140135655A publication Critical patent/KR20140135655A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
KR20140058844A 2013-05-18 2014-05-16 반도체 장치 Ceased KR20140135655A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-105683 2013-05-18
JP2013105683 2013-05-18

Publications (1)

Publication Number Publication Date
KR20140135655A true KR20140135655A (ko) 2014-11-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140058844A Ceased KR20140135655A (ko) 2013-05-18 2014-05-16 반도체 장치

Country Status (3)

Country Link
US (1) US9754971B2 (enExample)
JP (1) JP6362405B2 (enExample)
KR (1) KR20140135655A (enExample)

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WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
CN105514120B (zh) 2016-01-21 2018-07-20 京东方科技集团股份有限公司 一种双栅tft阵列基板及其制造方法和显示装置
US10816865B2 (en) * 2016-03-15 2020-10-27 Sharp Kabushiki Kaisha Active matrix substrate
JP6870926B2 (ja) * 2016-06-22 2021-05-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
US10403204B2 (en) 2016-07-12 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for driving display device
JP2018116769A (ja) * 2017-01-16 2018-07-26 株式会社ジャパンディスプレイ 表示装置
CN112913033A (zh) * 2018-10-26 2021-06-04 株式会社半导体能源研究所 金属氧化物的制造方法及半导体装置的制造方法
JP7446076B2 (ja) * 2019-10-02 2024-03-08 株式会社ジャパンディスプレイ 半導体装置
CN112259612B (zh) * 2020-10-23 2024-07-05 合肥鑫晟光电科技有限公司 显示基板及其制作方法、显示装置

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