JP6362405B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6362405B2
JP6362405B2 JP2014100753A JP2014100753A JP6362405B2 JP 6362405 B2 JP6362405 B2 JP 6362405B2 JP 2014100753 A JP2014100753 A JP 2014100753A JP 2014100753 A JP2014100753 A JP 2014100753A JP 6362405 B2 JP6362405 B2 JP 6362405B2
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JP
Japan
Prior art keywords
insulating film
film
oxide
oxide semiconductor
transistor
Prior art date
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Expired - Fee Related
Application number
JP2014100753A
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English (en)
Japanese (ja)
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JP2015005730A5 (enExample
JP2015005730A (ja
Inventor
山崎　舜平
舜平 山崎
三宅　博之
博之 三宅
聖子 井上
聖子 井上
大介 松林
大介 松林
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014100753A priority Critical patent/JP6362405B2/ja
Publication of JP2015005730A publication Critical patent/JP2015005730A/ja
Publication of JP2015005730A5 publication Critical patent/JP2015005730A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014100753A 2013-05-18 2014-05-14 半導体装置 Expired - Fee Related JP6362405B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014100753A JP6362405B2 (ja) 2013-05-18 2014-05-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013105683 2013-05-18
JP2013105683 2013-05-18
JP2014100753A JP6362405B2 (ja) 2013-05-18 2014-05-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2015005730A JP2015005730A (ja) 2015-01-08
JP2015005730A5 JP2015005730A5 (enExample) 2017-06-15
JP6362405B2 true JP6362405B2 (ja) 2018-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014100753A Expired - Fee Related JP6362405B2 (ja) 2013-05-18 2014-05-14 半導体装置

Country Status (3)

Country Link
US (1) US9754971B2 (enExample)
JP (1) JP6362405B2 (enExample)
KR (1) KR20140135655A (enExample)

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TWI654762B (zh) * 2011-05-05 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6168915B2 (ja) * 2013-08-22 2017-07-26 キヤノン株式会社 半導体装置の製造方法
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WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
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US10816865B2 (en) * 2016-03-15 2020-10-27 Sharp Kabushiki Kaisha Active matrix substrate
JP6870926B2 (ja) * 2016-06-22 2021-05-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
US10403204B2 (en) 2016-07-12 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for driving display device
JP2018116769A (ja) * 2017-01-16 2018-07-26 株式会社ジャパンディスプレイ 表示装置
CN112913033A (zh) * 2018-10-26 2021-06-04 株式会社半导体能源研究所 金属氧化物的制造方法及半导体装置的制造方法
JP7446076B2 (ja) * 2019-10-02 2024-03-08 株式会社ジャパンディスプレイ 半導体装置
CN112259612B (zh) * 2020-10-23 2024-07-05 合肥鑫晟光电科技有限公司 显示基板及其制作方法、显示装置

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