KR20130136390A - 광학계, 노광 장치 및 디바이스를 제조하는 방법 - Google Patents

광학계, 노광 장치 및 디바이스를 제조하는 방법 Download PDF

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Publication number
KR20130136390A
KR20130136390A KR1020130062198A KR20130062198A KR20130136390A KR 20130136390 A KR20130136390 A KR 20130136390A KR 1020130062198 A KR1020130062198 A KR 1020130062198A KR 20130062198 A KR20130062198 A KR 20130062198A KR 20130136390 A KR20130136390 A KR 20130136390A
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KR
South Korea
Prior art keywords
optical element
optical
optical system
substrate
space
Prior art date
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Ceased
Application number
KR1020130062198A
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English (en)
Korean (ko)
Inventor
요시유키 나가이
쿄이치 미야자키
오사무 야스노베
하루나 카와시마
Original Assignee
캐논 가부시끼가이샤
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20130136390A publication Critical patent/KR20130136390A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G02B13/26—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances for reproducing with unit magnification
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130062198A 2012-06-04 2013-05-31 광학계, 노광 장치 및 디바이스를 제조하는 방법 Ceased KR20130136390A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012127531A JP6041541B2 (ja) 2012-06-04 2012-06-04 露光装置及びデバイス製造方法
JPJP-P-2012-127531 2012-06-04

Publications (1)

Publication Number Publication Date
KR20130136390A true KR20130136390A (ko) 2013-12-12

Family

ID=49737318

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130062198A Ceased KR20130136390A (ko) 2012-06-04 2013-05-31 광학계, 노광 장치 및 디바이스를 제조하는 방법

Country Status (4)

Country Link
JP (1) JP6041541B2 (https=)
KR (1) KR20130136390A (https=)
CN (1) CN103454769B (https=)
TW (1) TWI490540B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210015654A (ko) * 2019-07-31 2021-02-10 캐논 가부시끼가이샤 광학장치, 투영 광학계, 노광장치 및 물품의 제조방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6463087B2 (ja) * 2014-11-14 2019-01-30 キヤノン株式会社 露光装置、および物品の製造方法
JP6386896B2 (ja) * 2014-12-02 2018-09-05 キヤノン株式会社 投影光学系、露光装置、および、デバイス製造方法
JP6896404B2 (ja) * 2016-11-30 2021-06-30 キヤノン株式会社 露光装置及び物品の製造方法

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US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
JPS61144020A (ja) * 1984-12-18 1986-07-01 Canon Inc 露光装置
JPH0845824A (ja) * 1994-08-03 1996-02-16 Toshiba Corp 露光装置
JP3521416B2 (ja) * 1995-10-06 2004-04-19 株式会社ニコン 投影露光装置
JPH09180985A (ja) * 1995-12-25 1997-07-11 Nikon Corp 投影露光装置
JP2001290279A (ja) * 2000-04-04 2001-10-19 Canon Inc 走査型露光装置
JPWO2003105203A1 (ja) * 2002-06-11 2005-10-13 株式会社ニコン 露光装置及び露光方法
JP3944008B2 (ja) * 2002-06-28 2007-07-11 キヤノン株式会社 反射ミラー装置及び露光装置及びデバイス製造方法
US6809888B1 (en) * 2003-04-16 2004-10-26 Ultratech, Inc. Apparatus and methods for thermal reduction of optical distortion
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004060184A1 (de) * 2004-12-14 2006-07-06 Carl Zeiss Smt Ag EUV-Spiegelanordnung
DE102005017262B3 (de) * 2005-04-12 2006-10-12 Xtreme Technologies Gmbh Kollektorspiegel für plasmabasierte kurzwellige Strahlungsquellen
US7959310B2 (en) * 2006-09-13 2011-06-14 Carl Zeiss Smt Gmbh Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element
JP2008292761A (ja) * 2007-05-24 2008-12-04 Canon Inc 露光装置及びデバイス製造方法
JP5118407B2 (ja) * 2007-07-31 2013-01-16 キヤノン株式会社 光学系、露光装置及びデバイス製造方法
JP2009162951A (ja) * 2007-12-28 2009-07-23 Canon Inc 反射屈折型投影光学系及びそれを有する露光装置
JP2009192569A (ja) * 2008-02-12 2009-08-27 Canon Inc 露光装置およびデバイス製造方法
EP2136250A1 (en) * 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographic apparatus and method
JP5398185B2 (ja) * 2008-07-09 2014-01-29 キヤノン株式会社 投影光学系、露光装置およびデバイス製造方法
JP5587578B2 (ja) * 2008-09-26 2014-09-10 ギガフォトン株式会社 極端紫外光源装置およびパルスレーザ装置
JP2010128301A (ja) * 2008-11-28 2010-06-10 Canon Inc 露光装置
JP5495547B2 (ja) * 2008-12-25 2014-05-21 キヤノン株式会社 処理装置、およびデバイス製造方法
JP2011039172A (ja) * 2009-08-07 2011-02-24 Canon Inc 露光装置およびデバイス製造方法
JP5595001B2 (ja) * 2009-10-06 2014-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
CN102243444B (zh) * 2010-05-14 2013-04-10 北京京东方光电科技有限公司 一种曝光设备、掩膜板及曝光方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210015654A (ko) * 2019-07-31 2021-02-10 캐논 가부시끼가이샤 광학장치, 투영 광학계, 노광장치 및 물품의 제조방법

Also Published As

Publication number Publication date
JP6041541B2 (ja) 2016-12-07
JP2013250541A (ja) 2013-12-12
TWI490540B (zh) 2015-07-01
CN103454769B (zh) 2016-05-04
CN103454769A (zh) 2013-12-18
TW201350902A (zh) 2013-12-16

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