KR20130126495A - 포토레지스트용 수지 조성물, 포토레지스트 및 액정 디바이스의 제조 방법 - Google Patents

포토레지스트용 수지 조성물, 포토레지스트 및 액정 디바이스의 제조 방법 Download PDF

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Publication number
KR20130126495A
KR20130126495A KR1020130051161A KR20130051161A KR20130126495A KR 20130126495 A KR20130126495 A KR 20130126495A KR 1020130051161 A KR1020130051161 A KR 1020130051161A KR 20130051161 A KR20130051161 A KR 20130051161A KR 20130126495 A KR20130126495 A KR 20130126495A
Authority
KR
South Korea
Prior art keywords
resin composition
photoresists
photoresist
xylenol
resin
Prior art date
Application number
KR1020130051161A
Other languages
English (en)
Korean (ko)
Inventor
유지 이마무라
Original Assignee
스미또모 베이크라이트 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미또모 베이크라이트 가부시키가이샤 filed Critical 스미또모 베이크라이트 가부시키가이샤
Publication of KR20130126495A publication Critical patent/KR20130126495A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
KR1020130051161A 2012-05-11 2013-05-07 포토레지스트용 수지 조성물, 포토레지스트 및 액정 디바이스의 제조 방법 KR20130126495A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012109329 2012-05-11
JPJP-P-2012-109329 2012-05-11

Publications (1)

Publication Number Publication Date
KR20130126495A true KR20130126495A (ko) 2013-11-20

Family

ID=49533929

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130051161A KR20130126495A (ko) 2012-05-11 2013-05-07 포토레지스트용 수지 조성물, 포토레지스트 및 액정 디바이스의 제조 방법

Country Status (4)

Country Link
JP (1) JP6221316B2 (zh)
KR (1) KR20130126495A (zh)
CN (1) CN103389622A (zh)
TW (1) TWI591432B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6287652B2 (ja) * 2014-07-10 2018-03-07 日油株式会社 感光性樹脂組成物およびその用途
TWI685714B (zh) * 2016-12-27 2020-02-21 奇美實業股份有限公司 化學增幅型正型感光性樹脂組成物、附有鑄模的基板的製造方法以及電鍍成形體的製造方法
CN113004478A (zh) * 2019-12-19 2021-06-22 彤程化学（中国）有限公司 一种酚类聚合物及其制备方法和应用
CN111538211B (zh) * 2020-05-25 2023-04-21 苏州理硕科技有限公司 一种酚醛树脂光刻胶组合物及其制备方法
CN112034687B (zh) * 2020-09-08 2021-08-10 江苏艾森半导体材料股份有限公司 一种光刻胶组合物及其应用
CN113461884B (zh) * 2021-08-04 2022-07-05 浙江自立高分子化工材料有限公司 一种光刻胶用改性酚醛树脂及其制备方法
CN114874405A (zh) * 2022-05-31 2022-08-09 杭摩科技新材料(阜阳)有限公司 一种热塑性酚醛树脂及其制备工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413894A (en) * 1993-05-07 1995-05-09 Ocg Microelectronic Materials, Inc. High ortho-ortho bonded novolak binder resins and their use in radiation-sensitive compositions
JP2834650B2 (ja) * 1993-10-08 1998-12-09 住友デュレズ株式会社 フォトレジスト用フェノール樹脂
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
JP3652071B2 (ja) * 1997-07-25 2005-05-25 東京応化工業株式会社 ノボラック樹脂前駆体およびノボラック樹脂の製造方法
JP3600713B2 (ja) * 1997-08-06 2004-12-15 東京応化工業株式会社 ポジ型ホトレジスト組成物
US6045966A (en) * 1997-12-15 2000-04-04 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
JPH11202485A (ja) * 1998-01-08 1999-07-30 Konica Corp 平版印刷版用感光性組成物
JP2002141265A (ja) * 2000-10-31 2002-05-17 Tokyo Ohka Kogyo Co Ltd ホトレジスト除去液
JP2004043777A (ja) * 2002-04-22 2004-02-12 Tokyo Ohka Kogyo Co Ltd ノボラック樹脂溶液、ポジ型ホトレジスト組成物およびその調製方法
CN102346372A (zh) * 2010-07-30 2012-02-08 奇美实业股份有限公司 正型感光性树脂组成物及使用该组成物形成图案的方法

Also Published As

Publication number Publication date
TWI591432B (zh) 2017-07-11
JP2013254193A (ja) 2013-12-19
JP6221316B2 (ja) 2017-11-01
CN103389622A (zh) 2013-11-13
TW201403229A (zh) 2014-01-16

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