KR20130122898A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20130122898A
KR20130122898A KR1020127023119A KR20127023119A KR20130122898A KR 20130122898 A KR20130122898 A KR 20130122898A KR 1020127023119 A KR1020127023119 A KR 1020127023119A KR 20127023119 A KR20127023119 A KR 20127023119A KR 20130122898 A KR20130122898 A KR 20130122898A
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South Korea
Prior art keywords
layer
atoms
electrode layer
semiconductor device
silicon carbide
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KR1020127023119A
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English (en)
Korean (ko)
Inventor
히데토 다마소
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스미토모덴키고교가부시키가이샤
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Publication of KR20130122898A publication Critical patent/KR20130122898A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020127023119A 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법 Withdrawn KR20130122898A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010245149A JP5418466B2 (ja) 2010-11-01 2010-11-01 半導体装置およびその製造方法
JPJP-P-2010-245149 2010-11-01
PCT/JP2011/073995 WO2012060222A1 (ja) 2010-11-01 2011-10-19 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR20130122898A true KR20130122898A (ko) 2013-11-11

Family

ID=46024339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127023119A Withdrawn KR20130122898A (ko) 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법

Country Status (8)

Country Link
US (1) US8823017B2 (enExample)
EP (1) EP2637198B1 (enExample)
JP (1) JP5418466B2 (enExample)
KR (1) KR20130122898A (enExample)
CN (1) CN102804342B (enExample)
CA (1) CA2790077A1 (enExample)
TW (1) TW201234609A (enExample)
WO (1) WO2012060222A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003252A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN104718604B (zh) * 2012-10-23 2017-06-30 富士电机株式会社 半导体装置的制造方法
JP5962475B2 (ja) * 2012-12-06 2016-08-03 三菱電機株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
JP2014123589A (ja) * 2012-12-20 2014-07-03 Sumitomo Heavy Ind Ltd 半導体装置の製造方法
JP6350106B2 (ja) * 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046311A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6323252B2 (ja) 2014-08-20 2018-05-16 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016046449A (ja) * 2014-08-26 2016-04-04 住友重機械工業株式会社 半導体素子の製造方法
JP6425457B2 (ja) * 2014-08-26 2018-11-21 住友重機械工業株式会社 半導体素子の製造方法
JP6686581B2 (ja) * 2016-03-16 2020-04-22 富士電機株式会社 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
JP6728096B2 (ja) 2017-04-24 2020-07-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP6728097B2 (ja) 2017-04-24 2020-07-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
DE102019101268A1 (de) * 2019-01-18 2020-07-23 Psc Technologies Gmbh Verfahren zur Herstellung oder Modifizierung von siliciumcarbidhaltigen Objekten
WO2021010405A1 (ja) 2019-07-17 2021-01-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
US12087821B2 (en) 2019-07-17 2024-09-10 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP7647216B2 (ja) * 2021-03-22 2025-03-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2023137581A (ja) * 2022-03-18 2023-09-29 キオクシア株式会社 半導体装置、半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device
JP3079851B2 (ja) 1993-09-28 2000-08-21 富士電機株式会社 炭化けい素電子デバイスの製造方法
US7297626B1 (en) * 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
KR100586949B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
JP4594113B2 (ja) * 2005-01-19 2010-12-08 新電元工業株式会社 半導体装置の製造方法
CN101263581B (zh) * 2005-09-16 2010-09-29 克里公司 其上有碳化硅功率器件的半导体晶圆的处理方法
US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
JP4140648B2 (ja) * 2006-11-02 2008-08-27 住友電気工業株式会社 ＳｉＣ半導体用オーミック電極、ＳｉＣ半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法
CN101542740B (zh) * 2007-02-14 2011-01-12 松下电器产业株式会社 半导体装置及其制造方法
WO2009013886A1 (ja) * 2007-07-20 2009-01-29 Panasonic Corporation 炭化珪素半導体装置およびその製造方法
JP5091063B2 (ja) * 2008-09-05 2012-12-05 三菱電機株式会社 半導体装置の製造方法
JP5391643B2 (ja) * 2008-10-22 2014-01-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP2637198A1 (en) 2013-09-11
JP5418466B2 (ja) 2014-02-19
WO2012060222A1 (ja) 2012-05-10
JP2012099598A (ja) 2012-05-24
EP2637198A4 (en) 2014-12-31
EP2637198B1 (en) 2018-09-26
CN102804342B (zh) 2016-08-03
TW201234609A (en) 2012-08-16
US20120319135A1 (en) 2012-12-20
WO2012060222A9 (ja) 2012-10-11
US8823017B2 (en) 2014-09-02
CA2790077A1 (en) 2012-05-10
CN102804342A (zh) 2012-11-28

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