KR20130105392A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20130105392A
KR20130105392A KR1020130024343A KR20130024343A KR20130105392A KR 20130105392 A KR20130105392 A KR 20130105392A KR 1020130024343 A KR1020130024343 A KR 1020130024343A KR 20130024343 A KR20130024343 A KR 20130024343A KR 20130105392 A KR20130105392 A KR 20130105392A
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KR
South Korea
Prior art keywords
wiring
layer
insulating layer
oxide semiconductor
electrode
Prior art date
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Ceased
Application number
KR1020130024343A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
준 코야마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20130105392A publication Critical patent/KR20130105392A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020130024343A 2012-03-14 2013-03-07 반도체 장치 Ceased KR20130105392A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-057974 2012-03-14
JP2012057974 2012-03-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020200031949A Division KR20200031597A (ko) 2012-03-14 2020-03-16 반도체 장치

Publications (1)

Publication Number Publication Date
KR20130105392A true KR20130105392A (ko) 2013-09-25

Family

ID=49156826

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020130024343A Ceased KR20130105392A (ko) 2012-03-14 2013-03-07 반도체 장치
KR1020200031949A Ceased KR20200031597A (ko) 2012-03-14 2020-03-16 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020200031949A Ceased KR20200031597A (ko) 2012-03-14 2020-03-16 반도체 장치

Country Status (3)

Country Link
US (1) US20130240873A1 (enExample)
JP (4) JP2013219348A (enExample)
KR (2) KR20130105392A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160037502A (ko) * 2014-09-29 2016-04-06 엘지디스플레이 주식회사 투명 디스플레이 패널 및 이의 제조 방법
WO2020027402A1 (ko) * 2018-07-30 2020-02-06 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014045175A (ja) * 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10916430B2 (en) 2016-07-25 2021-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI728826B (zh) * 2020-06-03 2021-05-21 友達光電股份有限公司 自帶濾波功能的可調式平面天線

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JP2628928B2 (ja) * 1990-05-22 1997-07-09 株式会社フロンテック 薄膜トランジスタアレイおよびその製造方法
JPH0451120A (ja) * 1990-06-19 1992-02-19 Nec Corp 薄膜電界効果型トランジスタ駆動液晶表示素子アレイ
JPH06160904A (ja) * 1992-11-26 1994-06-07 Matsushita Electric Ind Co Ltd 液晶表示装置とその製造方法
US6949417B1 (en) * 1997-03-05 2005-09-27 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
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JP2974022B1 (ja) * 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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KR100883769B1 (ko) 2002-11-08 2009-02-18 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
JP3901703B2 (ja) * 2004-06-16 2007-04-04 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタ型液晶表示装置
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
KR101333509B1 (ko) * 2004-12-06 2013-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 모듈, 및 휴대 전화
US7638371B2 (en) * 2006-03-07 2009-12-29 Industrial Technology Research Institute Method for manufacturing thin film transistor display array with dual-layer metal line
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WO2010032639A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101540341B1 (ko) * 2008-10-17 2015-07-30 삼성전자주식회사 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
JP5724157B2 (ja) * 2009-04-13 2015-05-27 日立金属株式会社 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法
KR101929726B1 (ko) * 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101746198B1 (ko) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
KR101597312B1 (ko) * 2009-11-16 2016-02-25 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5540843B2 (ja) * 2010-04-05 2014-07-02 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、及び電子機器
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160037502A (ko) * 2014-09-29 2016-04-06 엘지디스플레이 주식회사 투명 디스플레이 패널 및 이의 제조 방법
WO2020027402A1 (ko) * 2018-07-30 2020-02-06 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
KR20200013817A (ko) * 2018-07-30 2020-02-10 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
CN112514103A (zh) * 2018-07-30 2021-03-16 三星显示有限公司 显示基板、其制造方法和包括显示基板的显示装置
US12080721B2 (en) 2018-07-30 2024-09-03 Samsung Display Co., Ltd. Display substrate, manufacturing method therefor, and display device including same
CN112514103B (zh) * 2018-07-30 2025-02-28 三星显示有限公司 显示基板、其制造方法和包括显示基板的显示装置

Also Published As

Publication number Publication date
JP2019176182A (ja) 2019-10-10
JP2013219348A (ja) 2013-10-24
JP2018050064A (ja) 2018-03-29
KR20200031597A (ko) 2020-03-24
JP2019012833A (ja) 2019-01-24
US20130240873A1 (en) 2013-09-19

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